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Publications of Andreas Rosenauer
Books and proceedings
  1. A. Rosenauer. Transmission Electron Microscopy of Semiconductor Nanostructures An Analysis of Composition and Strain State. Springer Tracts in Modern Physics 182 Springer-Verlag Berlin Heidelberg, 2003 ISBN 3-540-00414-9, 2003.


  2. A. Rosenauer. TEM-Untersuchung von epitaktischen Grenzflächen in II-VI/II-V Heterostrukturen (Dissertation). Roderer-Verlag, Regensburg, 1996.


Articles in journal or book chapters
  1. Lukas Fuchs, Tom Kirstein, Christoph Mahr, Orkun Furat, Valentin Baric, Andreas Rosenauer, Lutz Mädler, and Volker Schmidt. Using convolutional neural networks for stereological characterization of 3D hetero-aggregates based on synthetic STEM data. Machine Learning: Science and Technology, 5(2):025007, April 2024.


  2. Tim Grieb, Florian F. Krause, Thorsten Mehrtens, Christoph Mahr, Beeke Gerken, Marco Schowalter, Bert Freitag, and Andreas Rosenauer. GaN atomic electric fields from a segmented STEM detector: Experiment and simulation. Journal of Microscopy, n/a(n/a), 2024. Keyword(s): 4D STEM, centre-of-mass, COM, electric fields, GaN, momentum-resolved STEM, segmented STEM detector.


  3. Christoph Mahr, Jakob Stahl, Beeke Gerken, Valentin Baric, Max Frei, Florian F. Krause, Tim Grieb, Marco Schowalter, Thorsten Mehrtens, Einar Kruis, Lutz Mädler, and Andreas Rosenauer. Characterization of mixing in nanoparticle hetero-aggregates by convolutional neural networks. Nano Select, 5(4):2300128, 2024. Keyword(s): convolutional neural networks, double flame spray pyrolysis, hetero-aggregate, nanoparticle mixing, scanning transmission electron microscopy.


  4. Manuel Alonso-Orts, Rudolfo Hötzel, Tim Grieb, Matthias Auf der Maur, Maximilian Ries, Felix Nippert, Benjamin März, Knut Müller-Caspary, Markus R. Wagner, Andreas Rosenauer, and Martin Eickhoff. Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices. Discover Nano, 18(1):27, 2023.


  5. Beeke Gerken, Christoph Mahr, Jakob Stahl, Tim Grieb, Marco Schowalter, Florian F. Krause, Thorsten Mehrtens, Lutz Mädler, and Andreas Rosenauer. Material Discrimination in Nanoparticle Hetero-Aggregates by Analysis of Scanning Transmission Electron Microscopy Images. Particle & Particle Systems Characterization, 40(9):2300048, 2023. Keyword(s): double flame spray pyrolysis, energy-dispersive X-ray spectroscopy, hetero-aggregates, hetero-contact, nanoparticle mixing, scanning transmission electron microscopy.


  6. Florian F. Krause, Marco Schowalter, Beeke Gerken, Dennis Marquardt, Tim Grieb, Thorsten Mehrtens, Christoph Mahr, and Andreas Rosenauer. Dose efficient annular bright field contrast with the ISTEM method: A proof of principle demonstration. Ultramicroscopy, 245:113661, 2023. Keyword(s): ISTEM, ABF STEM, Light atom imaging, Aperture manufacturing, Principle of reciprocity.


  7. Cristian Messina, Yongkang Gong, Oumaima Abouzaid, Bogdan-Petrin Ratiu, Tim Grieb, Zhao Yan, Andreas Rosenauer, Sang Soon Oh, and Qiang Li. Deformed Honeycomb Lattices of InGaAs Nanowires Grown on Silicon-on-Insulator for Photonic Crystal Surface-Emitting Lasers. Advanced Optical Materials, 11(5):2201809, 2023. Keyword(s): III–V semiconductors, nanowires, photonic crystals, selective area epitaxy, surface-emitting lasers.


  8. Maximilian Ries, Felix Nippert, Benjamin März, Manuel Alonso-Orts, Tim Grieb, Rudolfo Hötzel, Pascal Hille, Pouria Emtenani, Eser Metin Akinoglu, Eugen Speiser, Julian Plaickner, Jörg Schörmann, Matthias Auf der Maur, Knut Müller-Caspary, Andreas Rosenauer, Norbert Esser, Martin Eickhoff, and Markus R. Wagner. Origin of the spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires. Nanoscale, 15:7077-7085, 2023.


  9. Gunther Wittstock, Marcus Bäumer, Wilke Dononelli, Thorsten Klüner, Lukas Lührs, Christoph Mahr, Lyudmila V. Moskaleva, Mehtap Oezaslan, Thomas Risse, Andreas Rosenauer, Anne Staubitz, Jörg Weissmüller, and Arne Wittstock. Nanoporous Gold: From Structure Evolution to Functional Properties in Catalysis and Electrochemistry. Chemical Reviews, 123(10):6716-6792, 2023.


  10. Tim Grieb, Florian F. Krause, Knut Müller-Caspary, Jan-Philipp Ahl, Marco Schowalter, Oliver Oppermann, Joachim Hertkorn, Karl Engl, and Andreas Rosenauer. Angle-dependence of ADF-STEM intensities for chemical analysis of InGaN/GaN. Ultramicroscopy, 238:113535, 2022. Keyword(s): GaN, InGaN, STEM, Quantitative, Angle-dependent scattering.


  11. Christoph Mahr, Tim Grieb, Florian F. Krause, Marco Schowalter, and Andreas Rosenauer. Towards the interpretation of a shift of the central beam in nano-beam electron diffraction as a change in mean inner potential. Ultramicroscopy, 236:113503, 2022. Keyword(s): Mean inner potential, Nano-beam electron diffraction, Scanning transmission electron microscopy, Interface, Disc detection.


  12. Christoph Mahr, Jorge Adrian Tapia Burgos, Marco Schowalter, Arne Wittstock, and Andreas Rosenauer. Investigation of the dealloying front in partially corroded alloys. Materials Research Letters, 10(12):824-831, 2022.


  13. Alex Ricardo Silva Olaya, Franziska Kühling, Christoph Mahr, Birthe Zandersons, Andreas Rosenauer, Jörg Weissmüller, and Gunther Wittstock. Promoting Effect of the Residual Silver on the Electrocatalytic Oxidation of Methanol and Its Intermediates on Nanoporous Gold. ACS Catal., pp 4415--4429, March 2022.


  14. Stefan Wild, Christoph Mahr, Andreas Rosenauer, Thomas Risse, Sergey Vasenkov, and Marcus Bäumer. New Perspectives for Evaluating the Mass Transport in Porous Catalysts and Unfolding Macro- and Microkinetics. Catalysis Letters, 2022.


  15. Tim Grieb, Florian F. Krause, Knut Müller-Caspary, Saleh Firoozabadi, Christoph Mahr, Marco Schowalter, Andreas Beyer, Oliver Oppermann, Kerstin Volz, and Andreas Rosenauer. Angle-resolved STEM using an iris aperture: Scattering contributions and sources of error for the quantitative analysis in Si. Ultramicroscopy, 221:113175, 2021. Keyword(s): Angle-resolved STEM, Quantitative STEM, Plasmon excitation, Inelastic scattering, Phonon correlation, Low-angle scattering.


  16. Tim Grieb, Florian F. Krause, Knut Müller-Caspary, Robert Ritz, Martin Simson, Jörg Schörmann, Christoph Mahr, Jan Müssener, Marco Schowalter, Heike Soltau, Martin Eickhoff, and Andreas Rosenauer. 4D-STEM at interfaces to GaN: Centre-of-mass approach & NBED-disc detection. Ultramicroscopy, 228:113321, 2021. Keyword(s): Electric fields, 4D STEM, Interfaces, COM, NBED.


  17. Daniel Loof, Oliver Thüringer, Marco Schowalter, Christoph Mahr, Anmona Shabnam Pranti, Walter Lang, Andreas Rosenauer, Volkmar Zielasek, Sebastian Kunz, and Marcus Bäumer. Synthesis and Characterization of Ligand-Linked Pt Nanoparticles: Tunable, Three-Dimensional, Porous Networks for Catalytic Hydrogen Sensing. ChemistryOpen, 10(7):697-712, 2021. Keyword(s): Amines derivatives, bifunctional ligands, heterogeneous catalysis, nanoparticles, platinum.


  18. Christoph Mahr, Alexandra Dworzak, Marco Schowalter, Mehtap Oezaslan, and Andreas Rosenauer. Quantitative 3D Characterization of Nanoporous Gold Nanoparticles by Transmission Electron Microscopy. Microscopy and Microanalysis, 27(4):678–686, 2021.


  19. Christoph Mahr, Knut Müller-Caspary, Tim Grieb, Florian F. Krause, Marco Schowalter, and Andreas Rosenauer. Accurate measurement of strain at interfaces in 4D-STEM: A comparison of various methods. Ultramicroscopy, 221:113196, 2021. Keyword(s): Strain measurement, Ptychography, Interface, 4D-STEM, Patterned apertures.


  20. Dennis Marquardt, Marco Schowalter, Florian F. Krause, Tim Grieb, Christoph Mahr, Thorsten Mehrtens, and Andreas Rosenauer. Accuracy and precision of position determination in ISTEM imaging of BaTiO3. Ultramicroscopy, 227:113325, 2021. Keyword(s): Imaging scanning transmission electron microscopy, TEM, CTEM, STEM, Tunnel junctions, BaTiO, Atom position determination.


  21. Andreas Beyer, Florian F Krause, Hoel L Robert, Saleh Firoozabadi, Tim Grieb, Pirmin Kükelhan, Damien Heimes, Marco Schowalter, Knut Müller-Caspary, Andreas Rosenauer, and Kerstin Volz. Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy. Scientific Reports, 10:1--15, 2020.


  22. Giulio Guzzinati, Wannes Ghielens, Christoph Mahr, Armand Béché, Andreas Rosenauer, Toon Calders, and Jo Verbeeck. Electron Bessel beam diffraction for precise and accurate nanoscale strain mapping. Applied Physics Letters, 114(24):243501, 2019.


  23. Anastasia Lackmann, Christoph Mahr, Andreas Rosenauer, Marcus Bäumer, and Arne Wittstock. Aerobic Methanol Oxidation over Unsupported Nanoporous Gold: The Influence of an Added Base. Catalysts, 9(5), 2019.


  24. Christoph Mahr, Knut Müller-Caspary, Robert Ritz, Martin Simson, Tim Grieb, Marco Schowalter, Florian F. Krause, Anastasia Lackmann, Heike Soltau, Arne Wittstock, and Andreas Rosenauer. Influence of distortions of recorded diffraction patterns on strain analysis by nano-beam electron diffraction. Ultramicroscopy, 196:74 - 82, 2019. Keyword(s): Strain measurement, Electron diffraction, Image distortions, 4D-STEM, Nanoporous gold.


  25. Knut Müller-Caspary, Tim Grieb, Jan Müssener, Nicolas Gauquelin, Pascal Hille, Jörg Schörmann, Johan Verbeeck, Sandra Van Aert, Martin Eickhoff, and Andreas Rosenauer. Electrical Polarization in AlN/GaN Nanodisks Measured by Momentum-Resolved 4D Scanning Transmission Electron Microscopy. Phys. Rev. Lett., 122:106102, March 2019.


  26. Junjie Shi, Arne Wittstock, Christoph Mahr, M. Mangir Murshed, Thorsten M. Gesing, Andreas Rosenauer, and Marcus Bäumer. Nanoporous gold functionalized with praseodymia-titania mixed oxides as a stable catalyst for the water-gas shift reaction. Physical Chemistry Chemical Physics, 21(6):3278--3286, 2019.


  27. Dipanwita Chatterjee, Shwetha Shetty, Knut Müller-Caspary, Tim Grieb, Florian F. Krause, Marco Schowalter, Andreas Rosenauer, and Narayanan Ravishankar. Ultrathin Au-Alloy Nanowires at the Liquid-Liquid Interface. Nano Lett., 18(3):1903--1907, March 2018.


  28. Michael Gockeln, Suman Pokhrel, Florian Meierhofer, Jens Glenneberg, Marco Schowalter, Andreas Rosenauer, Udo Fritsching, Matthias Busse, Lutz Mädler, and Robert Kun. Fabrication and performance of Li4Ti5O12/C Li-ion battery electrodes using combined double flame spray pyrolysis and pressure-based lamination technique. Journal of Power Sources, 374:97 - 106, 2018. Keyword(s): Double flame spray pyrolysis (DFSP), LiTiO (LTO), Composite material, Lamination, Li-ion battery, Solvent- and binder-free electrode processing.


  29. Tim Grieb, Florian F. Krause, Marco Schowalter, Dennis Zillmann, Roman Sellin, Knut Müller-Caspary, Christoph Mahr, Thorsten Mehrtens, Dieter Bimberg, and Andreas Rosenauer. Strain analysis from nano-beam electron diffraction: Influence of specimen tilt and beam convergence. Ultramicroscopy, 190:45 - 57, 2018.


  30. Tim Grieb, M. Tewes, Marco Schowalter, Knut Müller-Caspary, Florian F. Krause, Thorsten Mehrtens, and Andreas Rosenauer. Quantitative HAADF STEM of SiGe in presence of amorphous surface layers from FIB preparation. Ultramicroscopy, 184:29-36, 2018. Keyword(s): NBED, Disc detection, Strain, Electric field measurement.


  31. Christoph Mahr, Knut Müller-Caspary, Matthias Graf, Anastasia Lackmann, Tim Grieb, Marco Schowalter, Florian F. Krause, Thorsten Mehrtens, Arne Wittstock, Jörg Weissmüller, and Andreas Rosenauer. Measurement of local crystal lattice strain variations in dealloyed nanoporous gold. Materials Research Letters, 6(1):84-92, 2018.


  32. Christoph Mahr, Marco Schowalter, Christoph Mitterbauer, Anastasia Lackmann, Lisa Fitzek, Thorsten Mehrtens, Arne Wittstock, and Andreas Rosenauer. Nanoporous gold dealloyed from AuAg and AuCu: Comparison of structure and chemical composition. Materialia, 2:131 - 137, 2018. Keyword(s): Nanoporous gold, Alloy corrosion, Regions rich in residual material, TEM.


  33. S. Schlichting, G. M. O. Hönig, J. Müßener, P. Hille, T. Grieb, S. Westerkamp, J. Teubert, J. Schörmann, M. R. Wagner, A. Rosenauer, M. Eickhoff, A. Hoffmann, and G. Callsen. Suppression of the quantum-confined Stark effect in polar nitride heterostructures. Communications Physics, 1(1):48, 2018.


  34. M. Alania, A. De Backer, I. Lobato, F.F. Krause, D. Van Dyck, A. Rosenauer, and S. Van Aert. How precise can atoms of a nanocluster be located in 3D using a tilt series of scanning transmission electron microscopy images?. Ultramicroscopy, 181:134 - 143, 2017. Keyword(s): Electron tomography, High-resolution electron microscopy, Precision, Resolution, Cramér-Rao lower bound.


  35. C. Carmesin, M. Schowalter, M. Lorke, D. Mourad, T. Grieb, K. Müller-Caspary, M. Yacob, J. P. Reithmaier, M. Benyoucef, A. Rosenauer, and F. Jahnke. Interplay of morphology, composition, and optical properties of InP-based quantum dots emitting at the $1.55\phantom{\rule{0.28em}{0ex}}\ensuremath{\mu}\mathrm{m}$ telecom wavelength. Phys. Rev. B, 96:235309, December 2017.


  36. N. Chery, T.H. Ngo, M.P. Chauvat, B. Damilano, A. Coruville, P. De Mierry, T. Grieb, T. Mehrtens, F.F. Krause, K. Meller-Caspary, M. Schowalter, B. Gil, A. Rosenauer, and P. Ruterana. The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells. Journal of Microscopy, 2017.


  37. N. Gauquelin, K.H.W. van den Bos, A. Beche, F.F. Krause, I. Lobato, S. Lazar, A. Rosenauer, S. Van Aert, and J. Verbeeck. Determining oxygen relaxations at an interface: A comparative study between transmission electron microscopy techniques. Ultramicroscopy, 181:178-190, 2017. Note: Cited By 0.


  38. Tim Grieb, Florian F. Krause, Christoph Mahr, Dennis Zillmann, Knut Müller-Caspary, Marco Schowalter, and Andreas Rosenauer. Optimization of NBED simulations for disc-detection measurements. Ultramicroscopy, 181:50 - 60, 2017. Keyword(s): NBED, Disc detection, Strain, Electric field measurement.


  39. M. Kracht, A. Karg, J. Schörmann, M. Weinhold, D. Zink, F. Michel, M. Rohnke, M. Schowalter, B. Gerken, A. Rosenauer, P. J. Klar, J. Janek, and M. Eickhoff. Tin-Assisted Synthesis of $\ensuremath{\epsilon} ext{\ensuremath{-}}{\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$ by Molecular Beam Epitaxy. Phys. Rev. Applied, 8:054002, November 2017.


  40. Florian F. Krause and A. Rosenauer. Reciprocity Relations in Transmission Electron Microscopy: A Rigorous Deviation. Micron, 92:1--5, 2017. Keyword(s): notacc.


  41. F.F. Krause, A. Rosenauer, J. Barthel, J. Mayer, K. Urban, R.E. Dunin-Borkowski, H.G. Brown, B.D. Forbes, and L.J. Allen. Atomic resolution elemental mapping using energy-filtered imaging scanning transmission electron microscopy with chromatic aberration correction. Ultramicroscopy, 181:173 - 177, 2017. Keyword(s): Atomic resolution imaging, Elemental mapping, Energy-filtered imaging scanning transmission electron microscopy.


  42. Florian F. Krause, Andreas Rosenauer, and Dirk Van Dyck. Imaging theory for the ISTEM imaging mode. Ultramicroscopy, 181:107 - 116, 2017. Keyword(s): ISTEM, Imaging STEM, Incoherent imaging, Image formation, Resolution, Scherzer conditions.


  43. Anastasia Lackmann, Christoph Mahr, Marco Schowalter, Lisa Fitzek, Jörg Weissmüller, Andreas Rosenauer, and Arne Wittstock. A comparative study of alcohol oxidation over nanoporous gold in gas and liquid phase. Journal of Catalysis, 353:99 - 106, 2017. Keyword(s): Heterogeneous catalysis, Mesoporous materials, Alcohols, Gold.


  44. Christoph Mahr, Paromita Kundu, Anastasia Lackmann, Daniele Zanaga, Karsten Thiel, Marco Schowalter, Martin Schwan, Sara Bals, Arne Wittstock, and Andreas Rosenauer. Quantitative determination of residual silver distribution in nanoporous gold and its influence on structure and catalytic performance. Journal of Catalysis, 352:52 - 58, 2017. Keyword(s): Nanoporous gold, Residual silver, Quantitative EDXS tomography, CO oxidation, Methanol oxidation, Silver cluster.


  45. Florian Meierhofer, Haipeng Li, Michael Gockeln, Robert Kun, Tim Grieb, Andreas Rosenauer, Udo Fritsching, Johannes Kiefer, Johannes Birkenstock, Lutz Mädler, and Suman Pokhrel. Screening Precursor-Solvent Combinations for Li$_4$Ti$_5$O$_{12}$ Energy Storage Material Using Flame Spray Pyrolysis. ACS Appl. Mater. Interfaces, 2017.


  46. Knut Müller-Caspary, Florian F. Krause, Tim Grieb, Stefan Löffler, Marco Schowalter, Armand Béché, Vincent Galioit, Dennis Marquardt, Josef Zweck, Peter Schattschneider, Johan Verbeeck, and Andreas Rosenauer. Measurement of atomic electric fields and charge densities from average momentum transfers using scanning transmission electron microscopy. Ultramicroscopy, 178:62-80, 2017. Keyword(s): TEM.


  47. Jan Müssener, Pascal Hille, Tim Grieb, Jörg Schörmann, Jörg Teubert, Eva Monroy, Andreas Rosenauer, and Martin Eickhoff. Bias-controlled optical transitions in GaN/AlN nanowire heterostructures. ACS Nano, 11:8758-8767, 2017.


  48. Meng Qi, William A. O’Brien, Chad A. Stephenson, Victor Patel, Ning Cao, Brian J. Thibeault, Marco Schowalter, Andreas Rosenauer, Vladimir Protasenko, Huili (Grace) Xing, and Mark A. Wistey. Extended Defect Propagation in Highly Tensile-Strained Ge Waveguides. Crystals, 7(6), 2017.


  49. Ira V. Rozhdestvenskaya, Enrico Mugnaioli, Marco Schowalter, Martin U. Schmidt, Michael Czank, Wulf Depmeier, and Andreas Rosenauer. The structure of denisovite, a fibrous nanocrystalline polytypic disordered `very complex' silicate, studied by a synergistic multi-disciplinary approach employing methods of electron crystallography and X-ray powder diffraction. IUCrJ, 4(3):223--242, May 2017. Keyword(s): denisovite, minerals, fibrous materials, nanocrystalline materials, electron crystallography, electron diffraction tomography, X-ray powder diffraction, modularity, disorder, polytypism, OD approach, complexity, framework-structured solids, inorganic materials, nanostructure, nanoscience.


  50. Wojciech Rudno-Rudziński, Marcin Syperek, Aleksander Maryński, Janusz Andrzejewski, Jan Misiewicz, Sven Bauer, Vitalii I. Sichkovskyi, Johann P. Reithmaier, Marco Schowalter, Beeke Gerken, Andreas Rosenauer, and Grzegorz Sęk. Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well-Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers. physica status solidi (a), pp 1700455--n/a, 2017. Note: 1700455. Keyword(s): emitting lasers, optical spectroscopy, quantum dots, tunnel injection structures.


  51. Junjie Shi, Christoph Mahr, M. Mangir Murshed, Thorsten M. Gesing, Andreas Rosenauer, M. Bäumer, and A. Wittstock. Steam reforming of methanol over oxide decorated nanoporous gold catalysts: a combined in situ FTIR and flow reactor study. Phys. Chem. Chem. Phys., 19:8880-8888, 2017.


  52. Michael Teck, M. Mangir Murshed, Marco Schowalter, Niels Lefeld, Henrike K. Grossmann, Tim Grieb, Thomas Hartmann, Lars Robben, Andreas Rosenauer, Lutz Mädler, and Thorsten M. Gesing. Structural and spectroscopic comparison between polycrystalline, nanocrystalline and quantum dot visible light photo-catalyst Bi$_2$WO$_6$. Journal of Solid State Chemistry, 254:82-89, 2017.


  53. Johannes Wild, Thomas N. G. Meier, Simon Pöllath, Matthias Kronseder, Andreas Bauer, Alfonso Chacon, Marco Halder, Marco Schowalter, Andreas Rosenauer, Josef Zweck, Jan Müller, Achim Rosch, Christian Pfleiderer, and Christian H. Back. Entropy-limited topological protection of skyrmions. Science Advances, 3(9), 2017.


  54. K. W. H. van den Bos, Florian F. Krause, Armand Beche, Johan Verbeeck, Andreas Rosenauer, and Sandra Van Aert. Locating light and heavy atomic column positions with picometer precision using ISTEM. Ultramicroscopy, 172:75--81, 2017.


  55. T. Aschenbrenner, M. Schowalter, T. Mehrtens, K. Müller-Caspary, M. Fikry, D. Heinz, I. Tischer, M. Madel, K. Thonke, D. Hommel, F. Scholz, and A.ahr Rosenauer. Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy. Journal of Applied Physics, 119(17), 2016.


  56. Daniel Carvalho, Knut Müller-Caspary, Marco Schowalter, Tim Grieb, Thorsten Mehrtens, Andreas Rosenauer, Rafael Ben, Teresa Garcìa, Andrés Redondo-Cubero, Katharina Lorenz, Bruno Daudin, and Francisco M. Morales. Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction. Scientific Reports, 6:28459, June 2016. Keyword(s): DPC, strain, NBD, SANBED, nano-beam electron diffraction, polarization, polarisation, piezoelectric.


  57. Jochen A. H. Dreyer, Suman Pokhrel, Johannes Birkenstock, Miguel G. Hevia, Marco Schowalter, Andreas Rosenauer, Atsushi Urakawa, Wey Yang Teoh, and Lutz Madler. Decrease of the required dopant concentration for [small delta]-Bi2O3 crystal stabilization through thermal quenching during single-step flame spray pyrolysis. CrystEngComm, 18:2046--2056, 2016.


  58. Andrea Kirsch, M. Mangir Murshed, Marco Schowalter, Andreas Rosenauer, and Thorsten M. Gesing. Nanoparticle Precursor into Polycrystalline Bi2Fe4O9: An Evolutionary Investigation of Structural, Morphological, Optical, and Vibrational Properties. The Journal of Physical Chemistry C, 120(33):18831--18840, 2016.


  59. Florian F. Krause, Marco Schowalter, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Effects of instrument imperfections on quantitative scanning transmission electron microscopy. Ultramicroscopy, 161:146--160, 2016. Keyword(s): TEM.


  60. Matthias Lohr, Ralph Schregle, Michael Jetter, Clemens Wächter, Knut Müller-Caspary, Thorsten Mehrtens, Andreas Rosenauer, Ines Pietzonka, Martin Strassburg, and Josef Zweck. Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures. physica status solidi (b), 253:140--144, 2016. Keyword(s): DPC, Efficiency droop, EFTEM, electric fields, GaN, HAADF, IMFP, MQW, QCSE, quantification, STEM.


  61. K. Müller-Caspary, O. Oppermann, T. Grieb, F. F. Krause, A. Rosenauer, M. Schowalter, T. Mehrtens, A. Beyer, K. Volz, and P. Potapov. Materials characterisation by angle resolved scanning transmission electron microscopy. Scientific Reports, 6:37146, 2016.


  62. H. Ryll, M. Simson, R. Hartmann, P. Holl, M. Huth, S. Ihle, Y. Kondo, P. Kotula, A. Liebel, K. Müller-Caspary, A. Rosenauer, R. Sagawa, J. Schmidt, H. Soltau, and L. Strüder. A pnCCD-based, fast direct single electron imaging camera for TEM and STEM. Journal of Instrumentation, 11(04):P04006, 2016.


  63. Marc Sauerbrey, Jan Höcker, Meikel Wellbrock, Marco Schowalter, Jon-Olaf Krisponeit, Knut Müller-Caspary, Andreas Rosenauer, Gang Wei, Lucio Colombi Ciacchi, Jens Falta, and Jan Ingo Flege. Ultrasmooth Ru(0001) Films as Templates for Ceria Nanoarchitectures. Crystal Growth & Design, 16(8):4216--4224, 2016.


  64. Junjie Shi, Christoph Mahr, M. Mangir Murshed, Volkmar Zielasek, Andreas Rosenauer, Thorsten M. Gesing, Marcus Bäumer, and Arne Wittstock. A versatile sol-gel coating for mixed oxides on nanoporous gold and their application in the water gas shift reaction. Catal. Sci. Technol., 6:5311--5319, 2016.


  65. P. S. Sokolov, M. Yu. Petrov, T. Mehrtens, K. Müller-Caspary, A. Rosenauer, D. Reuter, and A. D. Wieck. Reconstruction of nuclear quadrupole interaction in (In,Ga)As/GaAs quantum dots observed by transmission electron microscopy. Phys. Rev. B, 93:045301, January 2016.


  66. Anda Sulce, Felix Bulke, Marco Schowalter, Andreas Rosenauer, Ralf Dringen, and Sebastian Kunz. Reactive oxygen species (ROS) formation ability and stability of small copper (Cu) nanoparticles (NPs). RSC Adv., 6:76980--76988, 2016.


  67. Dan Zhou, Knut Müller-Caspary, Wilfried Sigle, Florian F. Krause, Andreas Rosenauer, and van Aken Peter. Sample tilt effects on atom column position determination in ABF-STEM imaging. Ultramicroscopy, 160:110--117, 2016. Keyword(s): Annular bright-field imaging.


  68. Florian F. Krause, Jan-Philipp Ahl, Darius Tytko, Pyuck-Pa Choi, Ricardo Egoavil, Marco Schowalter, Thorsten Mehrtens, Knut Müller-Caspary, Johan Verbeeck, Dierk Raabe, Joachim Hertkorn, Karl Engl, and Andreas Rosenauer. Homogeneity and composition of AlInGaN: A multiprobe nanostructure study. Ultramicroscopy, 156(0):29--36, 2015. Keyword(s): HAADF STEM.


  69. Christoph Mahr, Knut Müller-Caspary, Tim Grieb, Marco Schowalter, Thorsten Mehrtens, Florian. F. Krause, Dennis Zillmann, and Andreas Rosenauer. Theoretical study of precision and accuracy of strain analysis by nano-beam electron diffraction. Ultramicroscopy, 158(0):38--48, 2015. Keyword(s): Strain measurement.


  70. Suman Pokhrel, Johannes Birkenstock, Arezoo Dianat, Janina Zimmermann, Marco Schowalter, Andreas Rosenauer, Lucio Colombi Ciacchi, and L. Madler. In situ high temperature X-ray diffraction, transmission electron microscopy and theoretical modeling for the formation of WO3 crystallites. CrystEngComm, 17:6985--6998, 2015.


  71. U. Rossow, L. Hoffmann, H. Bremers, E.R. Buss, F. Ketzer, T. Langer, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer. Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells. Journal of Crystal Growth, 414(0):49--55, 2015. Note: Proceedings of the Seventeenth International Conference on Metalorganic Vapor Phase Epitaxy. Keyword(s): A1. Surface processes.


  72. M. Dries, S. Hettler, B. Gamm, E. Müller, W. Send, K. Müller, A. Rosenauer, and D. Gerthsen. A nanocrystalline Hilbert phase-plate for phase-contrast transmission electron microscopy. Ultramicroscopy, 139(0):29--37, 2014. Keyword(s): Transmission electron microscopy.


  73. Elias Goldmann, Matthias Paul, Florian F. Krause, Knut Müller, Jan Kettler, Thorsten Mehrtens, Andreas Rosenauer, Michael Jetter, Peter Michler, and Frank Jahnke. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 micrometers. Applied Physics Letters, 105(15):152102, 2014.


  74. Tim Grieb, Knut Müller, Emmanuel Cadel, Andreas Beyer, Marco Schowalter, Etienne Talbot, Kerstin Volz, and Andreas Rosenauer. Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM. Microscopy and Microanalysis, 20:1740, 9 2014.


  75. Dominik Heinz, Mohamed Fikry, Timo Aschenbrenner, Marco Schowalter, Tobias Meisch, Manfred Madel, Florian Huber, Matthias Hocker, Manuel Frey, Ingo Tischer, Benjamin Neuschl, Thorsten Mehrtens, Knut Müller, Andreas Rosenauer, Detlef Hommel, Klaus Thonke, and Ferdinand Scholz. GaN tubes with coaxial non- and semipolar GaInN quantum wells. Phys. Status Solidi (c), 11:648--651, 2014.


  76. R. R. Juluri, A. Rath, A. Ghosh, A. Bhukta, R. Sathyavathi, D. Narayana Rao, Knut Müller, Marco Schowalter, Kristian Frank, Tim Grieb, Florian Krause, Andreas Rosenauer, and Parlapalli Vencata Satyam. Coherently Embedded Ag Nanostructures in Si: 3D Imaging and their application to SERS. Scientific Reports, 4:4633, April 2014.


  77. H. Kauko, B. O. Fimland, T. Grieb, A. M. Munshi, K. Müller, A. Rosenauer, and A. T. J. van Helvoort. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires. Journal of Applied Physics, 116(14):144303, 2014.


  78. H. Kauko, T. Grieb, A. M. Munshi, K. Mller, A. Rosenauer, B. O. Fimland, and A. T. J. van Helvoort. The Outward Diffusion of Sb during Nanowire Growth Studied by Quantitative High-Angle Annular Dark Field Scanning Transmission Electron Microscopy. Microscopy and Microanalysis, 20:186--187, 8 2014.


  79. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Atomic electric fields revealed by a quantum mechanical approach to electron picodiffraction. Nature Communications, 5:5653:1--8, December 2014. Keyword(s): DPC, STEM, electric field.


  80. A. Rath, J. K. Dash, R. R. Juluri, A. Ghosh, T. Grieb, M. Schowalter, F. F. Krause, K. Müller, A. Rosenauer, and P. V. Satyam. A study of the initial stages of the growth of Au-assisted epitaxial Ge nanowires on a clean Ge(100) surface. CrystEngComm, 16:2486--2490, 2014.


  81. Andreas Rosenauer, Florian F. Krause, Knut Müller, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. Phys. Rev. Lett., 113:096101, August 2014.


  82. Ahin Roy, Subhajit Kundu, Knut Müller, Andreas Rosenauer, Saransh Singh, Prita Pant, M. P. Gururajan, Praveen Kumar, J. Weissmüller, Abhishek Kumar Singh, and N. Ravishankar. Wrinkling of Atomic Planes in Ultrathin Au Nanowires. Nano Letters, 14(8):4859--4866, 2014.


  83. J. Schmidt, R. Hartmann, P. Holl, M. Huth, G. Lutz, K. Müller, A. Rosenauer, H. Ryll, S. Send, M. Simson, D. Steigenhöfer, J. Soltau, H. Soltau, and L. Strüder. Extending the dynamic range of fully depleted pnCCDs. Journal of Instrumentation, 9(10):P10008, 2014. Keyword(s): pnCCD, direct electron detection, CCD, fast, ultrafast.


  84. Marco Schowalter, Ingo Stoffers, Florian F. Krause, Thorsten Mehrtens, Knut Müller, Malte Fandrich, Timo Aschenbrenner, Detlef Hommel, and Andreas Rosenauer. Influence of Static Atomic Displacements on Composition Quantification of AlGaN/GaN Heterostructures from HAADF-STEM Images. Microscopy and Microanalysis, 20:1463--1470, 10 2014.


  85. Duggi V. Sridhara Rao, Ramachandran Sankarasubramanian, Kuttanellore Muraleedharan, Thorsten Mehrtens, Andreas Rosenauer, and Dipankar Banerjee. Quantitative Strain and Compositional Studies of InGaAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques. Microscopy and Microanalysis, 20:1262--1270, 8 2014.


  86. Olesea Volciuc, Vladimir Sergentu, Ion Tiginyanu, Marco Schowalter, Veaceslav Ursaki, Andreas Rosenauer, Detlef Hommel, and Jürgen Gutowski. Photonic Crystal Structures Based on GaN Ultrathin Membranes. Journal of Nanoelectronics and Optoelectronics, 9(2):271--275, 2014. Keyword(s): GAN ULTRATHIN MEMBRANES, NANOSTRUCTURE FABRICATION, PHOTONIC CRYSTALS, THEORY AND DESIGN.


  87. Tobias Bollhorst, Tim Grieb, Andreas Rosenauer, Gerald Fuller, Michael Maas, and Kurosch Rezwan. Synthesis route for the self-assembly of submicrometer-sized colloidosomes with tailorable nanopores. Chem. Mater., 25:3464, 2013.


  88. Malte Fandrich, Thorsten Mehrtens, Timo Aschenbrenner, Thorsten Klein, Martina Gebbe, Stephan Figge, Carsten Kruse, Andreas Rosenauer, and Detlef Hommel. Nitride based heterostructures with Ga- and N-polarity for sensing applications. Journal of Crystal Growth, 370(0):68--73, 2013. Keyword(s): A1. Characterization, A3. Metalorganic vapor phase epitaxy, A3. Molecular beam epitaxy, B1. Nitrides, B3. Sensors.


  89. Tim Grieb, Knut Müller, Rafael Fritz, Vincenzo Grillo, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Quantitative chemical evaluation of dilute GaNAs using ADF STEM: Avoiding surface strain induced artifacts. Ultramicroscopy, 129(0):1--9, 2013. Keyword(s): Quantitative.


  90. L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, M. Schowalter, T. Mehrtens, A Rosenauer, and A. Hangleiter. Atomics scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content. Applied Physics Letters, 102:102110, 2013.


  91. H. Kauko, T. Grieb, R. Bjørge, M. Schowalter, A.M. Munshi, H. Weman, A. Rosenauer, and A.T.J. van Helvoort. Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM. Micron, 44(0):254--260, 2013. Keyword(s): HAADF-STEM.


  92. Florian F. Krause, Knut Müller, Dennis Zillmann, Jacob Jansen, Marco Schowalter, and Andreas Rosenauer. Comparison of intensity and absolute contrast of simulated and experimental high-resolution transmission electron microscopy images for different multislice simulation methods. Ultramicroscopy, 134(0):94--101, 2013. Keyword(s): Stobbs factor.


  93. Fabian Meder, Julia Wehling, Artur Fink, Beate Piel, Kaibo Li, Kristian Frank, Andreas Rosenauer, Laura Treccani, Susan Koeppen, Andreas Dotzauer, and Kurosch Rezwan. The role of surface functionalization of colloidal alumina particles on their controlled interactions with viruses. Biomaterials, 34(17):4203--4213, 2013. Keyword(s): Virus-material interaction.


  94. Thorsten Mehrtens, Knut Müller, Marco Schowalter, Dongzhi Hu, Daniel M. Schaadt, and Andreas Rosenauer. Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images. Ultramicroscopy, 131(0):1--9, 2013. Keyword(s): HAADF-STEM.


  95. T. Mehrtens, M. Schowalter, D. Tytko, P. Choi, D. Raabe, L. Hoffmann, H. Jönen, U. Rossow, A. Hangleiter, and A. Rosenauer. Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. Applied Physics Letters, 102(13):132112, 2013. Keyword(s): gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, quantum well lasers, scanning-transmission electron microscopy, semiconductor quantum wells, wide band gap semiconductors.


  96. T Mehrtens, M Schowalter, D Tytko, P Choi, D Raabe, L Hoffmann, H Jönen, U Rossow, A Hangleiter, and A Rosenauer. Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-contrast. Journal of Physics: Conference Series, 471(1):012009, 2013.


  97. K Müller, H Ryll, I Ordavo, M Schowalter, J Zweck, H Soltau, S Ihle, L Strüder, K Volz, P Potapov, and A Rosenauer. STEM strain analysis at sub-nanometre scale using millisecond frames from a direct electron read-out CCD camera. Journal of Physics: Conference Series, 471(1):012024, 2013.


  98. U. Rossow, A. Kruse, H. Jönen, L. Hoffmann, F. Ketzer, T. Langer, R. Buss, H. Bremers, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer. Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region. Journal of Crystal Growth, 370(0):105--108, 2013. Keyword(s): A3. Low press. metalorganic vapor phase epitaxy, A3. Quantum wells, A3. Laser epitaxy, B1. Nitrides, B2. Semiconducting III-V materials.


  99. A. Schneider, K. Sebald, A. Dev, K. Frank, A. Rosenauer, and T. Voss. Towards optical hyperdoping of binary oxide semiconductors. Journal of Applied Physics, 113(14):143512, 2013. Keyword(s): antimony, high-frequency effects, high-speed optical techniques, II-VI semiconductors, nanostructured materials, semiconductor doping, surface structure, wide band gap semiconductors.


  100. V.C. Srivastava, K.B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, J. Eckert, A. Rosenauer, and H.-W. Zoch. Microstructural characteristics of spray formed and heat treated Al-(Y, La)-Ni-Co system. Journal of Alloys and Compounds, 578:471--480, 2013. Keyword(s): Spray forming.


  101. M Tewes, F F Krause, K Müller, P Potapov, M Schowalter, T Mehrtens, and A Rosenauer. Quantitative Composition Evaluation from HAADF-STEM in GeSi/Si Heterostructures. Journal of Physics: Conference Series, 471(1):012011, 2013.


  102. S. Van Aert, A. De Backer, G. T. Martinez, B. Goris, S. Bals, G. Van Tendeloo, and A. Rosenauer. Procedure to count atoms with trustworthy single-atom sensitivity. Phys. Rev. B, 87:064107, February 2013.


  103. Julia Wehling, Eike Volkmann, Tim Grieb, Andreas Rosenauer, Michael Maas, Laura Treccani, and Kurosch Rezwan. A critical study: Assessment of the effect of silica particles from 15 to 500Â nm on bacterial viability. Environmental Pollution, 176(0):292--299, 2013. Keyword(s): Silica.


  104. Thorsten M. Gesing, Marco Schowalter, Claudia Weidenthaler, M. Mangir Murshed, Gwilherm Nenert, Cecilia B. Mendive, Mariano Curti, Andreas Rosenauer, J.-Christian Buhl, Hartmut Schneider, and Reinhard X. Fischer. Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons. J. Mater. Chem., 22:18814--18823, 2012.


  105. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A method to avoid strain field induced artifacts in 2D chemical mapping of dilute GaNAs by HAADF STEM. Microsc. Microanal., 18(2):1028--1029, 2012.


  106. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging and improved STEM-HAADF strain state analysis. Ultramicroscopy, 117:15--23, 2012.


  107. Katharina I. Gries, Fabian Heinemann, Andreas Rosenauer, and Monika F. In vitro growth of flat aragonite crystals between the layers of the insoluble organic matrix of the abalone Haliotis laevigata. Journal of Crystal Growth, 358(0):75--80, 2012. Keyword(s): A1. Biocrystallization.


  108. Dongchao Hou, Apurba Dev, Kristian Frank, Andreas Rosenauer, and Tobias Voss. Oxygen-Controlled Photoconductivity in ZnO Nanowires Functionalized with Colloidal CdSe Quantum Dots. The Journal of Physical Chemistry C, 116(36):19604--19610, 2012.


  109. Thorsten Mehrtens, Stephanie Bley, Parlapalli Venkata Satyam, and Andreas Rosenauer. Optimization of the preparation of GaN-based specimens with low-energy ion milling for (S)TEM. Micron, 43(8):902--909, 2012. Keyword(s): Scanning transmission electron microscopy, Focused ion beam, Argon ion milling, Low-energy ion milling, Stopping and range of ions in matter.


  110. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy. Microscopy and Microanalysis, 18(05):995--1009, 2012.


  111. Knut Müller, Henning Ryll, Ivan Ordavo, Sebastian Ihle, Lothar Strüder, Kerstin Volz, Josef Zweck, Heike Soltau, and Andreas Rosenauer. Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device. Applied Physics Letters, 101(21):212110, 2012. Keyword(s): CCD image sensors, electron detection, electron probes, nanostructured materials, scanning-transmission electron microscopy, semiconductor materials, strain measurement.


  112. A. Rath, J. K. Dash, R. R. Juluri, A. Rosenauer, Marcos Schoewalter, and P. V. Satyam. Growth of oriented Au nanostructures: Role of oxide at the interface. Journal of Applied Physics, 111(6):064322, 2012. Keyword(s): annealing, electron energy loss spectra, elemental semiconductors, field emission electron microscopy, gold, metallic thin films, molecular beam epitaxial growth, nanofabrication, nanoparticles, scanning electron microscopy, silicon, silicon compounds, transmission electron microscopy, vacuum deposition.


  113. A. Rath, J. K. Dash, R. R. Juluri, M. Schowalter, K. Müller, A. Rosenauer, and P. V. Satyam. Nano scale phase separation in Au-Ge system on ultra clean Si (100) surfaces. Journal of Applied Physics, 111:104319, 2012.


  114. Marco Schowalter, Knut Müller, and Andreas Rosenauer. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III--V and II--VI semiconductors. Acta Crystallographica Section A, 68(1):68--76, January 2012. Keyword(s): scattering factors, static atomic displacements, modified atomic scattering amplitudes, correction factor.


  115. Marco Schowalter, Andreas Rosenauer, and Kerstin Volz. Parameters for temperature dependence of mean-square displacements for B-, Bi- and Tl-containing binary III-V compounds. Acta Crystallographica Section A, 68(3):319--323, 2012. Keyword(s): Debye-Waller factors, mean-square displacements, force constants, phonon density of states, phonon dispersion relations, density functional theory.


  116. K. Sebald, M. Seyfried, S. Klembt, S. Bley, A. Rosenauer, D. Hommel, and C. Kruse. Strong coupling in monolithic microcavities with ZnSe quantum wells. Applied Physics Letters, 100(16):161104--161104-4, 2012. Keyword(s): microcavity lasers, quantum well lasers, scanning electron microscopy, transmission electron microscopy, zinc compounds, 4255Px, 4255Sa.


  117. Huanjun Zhang, Amir R. Gheisi, Andreas Sternig, Knut Müller, Marco Schowalter, Andreas Rosenauer, Oliver Diwald, and Lutz Mädler. Bulk and Surface Excitons in Alloyed and Phase-Separated ZnO-MgO Particulate Systems. ACS Applied Materials & Interfaces, 4(5):2490--2497, 2012.


  118. W. Van den Broek, A. Rosenauer, B. Goris, G.T. Martinez, S. Bals, S. Van Aert, and D. Van Dyck. Correction of non-linear thickness effects in HAADF STEM electron tomography. Ultramicroscopy, 116(0):8--12, 2012. Keyword(s): HAADF STEM tomography.


  119. Balint Aradi, Peter Deak, Huynh Anh Huy, Andreas Rosenauer, and Thomas Frauenheim. Role of Symmetry in the Stability and Electronic Structure of Titanium Dioxide Nanowires. The Journal of Physical Chemistry C, 115(38):18494--18499, 2011.


  120. T. Aschenbrenner, G. Kunert, W. Freund, C. Kruse, S. Figge, M. Schowalter, C. Vogt, J. Kalden, K. Sebald, A. Rosenauer, J. Gutowski, and D. Hommel. Catalyst free self-organized grown high-quality GaN nanorods. physica status solidi (b), 248(8):1787--1799, 2011. Keyword(s): MBE, MOVPE, nanorods, nitrides, TEM, III-V semiconductors.


  121. Heiko Dartsch, Christian Tessarek, Timo Aschenbrenner, Stephan Figge, Carsten Kruse, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity. Journal of Crystal Growth, 320(1):28--31, 2011. Keyword(s): A1. Electroluminescence.


  122. J. K. Dash, A. Rath, R. R. Juluri, P. Santhana Raman, K. Müller, A. Rosenauer, and P. V. Satyam. DC heating induced shape transformation of Ge structures on ultra clean Si (5 5 12) surfaces. Journal of Physics: Condensed matter, 23:135002, 2011.


  123. J. K. Dash, A. Rath, R. R. Juluri, P. Santhana Raman, K. Müller, M. Schowalter, R. Imlau, A. Rosenauer, and P. V. Satyam. Shape transformation of SiGe structures on ultra clean Si(5 5 7) and Si(5 5 12) surfaces. Journal of Physics: Conference Series, 326(1):012021, 2011.


  124. J. Falta, Th. Schmidt, S. Gangopadhyay, Chr. Schulz, S. Kuhr, N. Berner, J. I. Flege, A. Pretorius, A. Rosenauer, K. Sebald, H. Lohmeyer, J. Gutowski, S. Figge, T. Yamaguchi, and D. Hommel. Cleaning and growth morphology of GaN and InGaN surfaces. physica status solidi (b), 248(8):1800--1809, 2011. Keyword(s): chemical analysis, scanning tunneling microscopy, quantum dots, X-ray photoemission spectroscopy.


  125. Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Gerd Kunert, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. A structural investigation of highly ordered catalyst- and mask-free GaN nanorods. Nanotechnology, 22(2):025603, 2011.


  126. M. Florian, F. Jahnke, A. Pretorius, A. Rosenauer, H. Dartsch, C. Kruse, and D. Hommel. Influence of growth imperfections on optical properties of nitride pillar VCSEL microcavities. physica status solidi (b), 248(8):1867--1870, 2011. Keyword(s): lasers, laser diodes, microcavities, optical properties, III-V semiconductors.


  127. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging. Journal of Physics: Conference Series, 326(1):012033, 2011.


  128. Katharina Gries, Fabian Heinemann, Meike Gummich, Andreas Ziegler, Andreas Rosenauer, and Monika Fritz. Influence of the Insoluble and Soluble Matrix of Abalone Nacre on the Growth of Calcium Carbonate Crystals. Crystal Growth & Design, 11(3):729--734, 2011.


  129. Vincenco Grillo, Knut Müller, Frank Glas, Kerstin Volz, and Andreas Rosenauer. Toward Simultaneous Assessment of In and N in InGaAsN Alloys by Quantitative STEM-ADF Imaging. Microscopy and Microanalysis, 17:1862--1863, 7 2011.


  130. V. Grillo, K. Müller, K. Volz, F. Glas, T. Grieb, and A. Rosenauer. Strain, composition and disorder in ADF imaging of semiconductors. Journal of Physics: Conference Series, 326(1):012006, 2011.


  131. Robert Imlau, Knut Müller, Oleg Rubel, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing. Journal of Physics: Conference Series, 326(1):012038, 2011.


  132. Carsten Kruse, Wojciech Pacuski, Tomasz Jakubczyk, Jakub Kobak, Jan A Gaj, Kristian Frank, Marco Schowalter, Andreas Rosenauer, Matthias Florian, Frank Jahnke, and Detlef Hommel. Monolithic ZnTe-based pillar microcavities containing CdTe quantum dots. Nanotechnology, 22(28):285204, 2011.


  133. G Kunert, W Freund, T Aschenbrenner, C Kruse, S Figge, M Schowalter, A Rosenauer, J Kalden, K Sebald, J Gutowski, M Feneberg, I Tischer, K Fujan, K Thonke, and D Hommel. Light-emitting diode based on mask-Â and catalyst-free grown N-polar GaN nanorods. Nanotechnology, 22(26):265202, 2011.


  134. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S A Gerstl, Pyuck-Pa Choi, Dierk Raabe, and Andreas Rosenauer. A (S)TEM and atom probe tomography study of InGaN. Journal of Physics: Conference Series, 326(1):012029, 2011.


  135. Knut Müller, Marco Schowalter, Andreas Rosenauer, Dongzhi Hu, Daniel M. Schaadt, Michael Hetterich, Philippe Gilet, Oleg Rubel, Rafael Fritz, and Kerstin Volz. Atomic scale annealing effects on InGaNAs studied by TEM three-beam imaging. Physical Review B, 84(4):045316, July 2011.


  136. K. Müller, M. Schowalter, O. Rubel, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, R. Fritz, K. Volz, and A. Rosenauer. TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells. Journal of Physics: Conference Series, 326(1):012026, 2011.


  137. Angelika Pretorius, Thomas Schmidt, Timo Aschenbrenner, Tomohiro Yamaguchi, Christian Kübel, Knut Müller, Heiko Dartsch, Detlef Hommel, Jens Falta, and Andreas Rosenauer. Microstructural and compositional analyses of GaN based nanostructures. Physica Status Solidi, 248:1822--1836, 2011.


  138. A Rath, J K Dash, R R Juluri, A Rosenauer, and P V Satyam. Temperature-dependent electron microscopy study of Au thin films on Si (1 0 0) with and without a native oxide layer as barrier at the interface. Journal of Physics D: Applied Physics, 44(11):115301, 2011.


  139. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Stephanie Bley, Parlapalli Venkata Satyam, Adrian Avramescu, Karl Engl, and Stephan Lutgen. 2D-composition mapping in InGaN without electron beam induced clustering of indium by STEM HAADF Z-contrast imaging. Journal of Physics: Conference Series, 326(1):012040, 2011.


  140. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Parlapalli Venkata Satyam, Stephanie Bley, Christian Tessarek, Detlef Hommel, Katrin Sebald, Moritz Seyfried, Jürgen Gutowski, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Composition mapping in InGaN by scanning transmission electron microscopy. Ultramicroscopy, 111:1316--1327, 2011. Keyword(s): Quantitative STEM, Composition determination, Multislice simulation, Frozen lattice simulation.


  141. Th. Schmidt, M. Siebert, J. I. Flege, S. Figge, S. Gangopadhyay, A. Pretorius, T.-L. Lee, J. Zegenhagen, L. Gregoratti, A. Barinov, A. Rosenauer, D. Hommel, and J. Falta. Mg and Si dopant incorporation and segregation in GaN. physica status solidi (b), 248(8):1810--1821, 2011. Keyword(s): defects, dopants, photoelectron microscopy, segregation, X-ray standing waves.


  142. C. Tessarek, S. Figge, T. Aschenbrenner, S. Bley, A. Rosenauer, M. Seyfried, J. Kalden, K. Sebald, J. Gutowski, and D. Hommel. Strong phase separation of strained InGaN layers due to spinodal and binodal decomposition: Formation of stable quantum dots. Phys. Rev. B, 83:115316, March 2011.


  143. Jianping Xiao, Agnieszka Kuc, Suman Pokhrel, Marco Schowalter, Satyam Parlapalli, Andreas Rosenauer, Thomas Frauenheim, Lutz Mädler, Lars G. M. Pettersson, and Thomas Heine. Evidence for Fe2+ in Wurtzite Coordination: Iron Doping Stabilizes ZnO Nanoparticles. Small, 7(20):2879--2886, 2011. Keyword(s): density functional theory, doping, iron, nanoparticles, zinc oxide.


  144. T. Aschenbrenner, H. Dartsch, C. Kruse, M. Anastasescu, M. Stoica, M. Gartner, A. Pretorius, A. Rosenauer, Thomas Wagner, and D. Hommel. Optical and structural characterization of AlInN layers for optoelectronic applications. J. Appl. Phys., 108(6):063533, 2010. Keyword(s): aluminium compounds, annealing, distributed Bragg reflectors, extinction coefficients, III-V semiconductors, indium compounds, MOCVD coatings, refractive index, semiconductor epitaxial layers, surface morphology, surface roughness, transmission electron microscopy, vapour phase epitaxial growth, wide band gap semiconductors, X-ray diffraction.


  145. M Dries, B Gamm, K Schultheiss, A Rosenauer, R Schröder, and D Gerthsen. Object-wave Reconstruction by Carbon-Film-Based Zernike- and Hilbert-Phase Plate Microscopy: A Theoretical Study Not Restricted to Weak Phase Objects. Microscopy and Microanalysis, 16(Supplement S2):552--553, 2010.


  146. B. Gamm, M. Dries, K. Schultheiss, H. Blank, A. Rosenauer, R.R. Schr�er, and D. Gerthsen. Object wave reconstruction by phase-plate transmission electron microscopy. Ultramicroscopy, 110(7):807--814, 2010. Keyword(s): Phase plate.


  147. Saji George, Suman Pokhrel, Tian Xia, Benjamin Gilbert, Zhaoxia Ji, Marco Schowalter, Andreas Rosenauer, Robert Damoiseaux, Kenneth A. Bradley, Lutz Mädler, and André E. Nel. Use of a Rapid Cytotoxicity Screening Approach To Engineer a Safer Zinc Oxide Nanoparticle through Iron Doping. ACS Nano, 4(1):15--29, 2010. Note: PMID: 20043640.


  148. Thorsten M. Gesing, Marco Schowalter, Claudia Weidenthaler, Andreas Rosenauer, Hartmut Schneider, and Reinhard X. Fischer. Mullite-type (Bi${\sb 1{$-$\it x}}$Sr${\sb {\it x}} ){\sb 2}$Al${\sb 4}$O${\sb 9{$-$\it x}/2}$: HT-XRPD, TEM and XPS investigations. Acta Crystallographica Section A, 66(a1):s182--s183, September 2010.


  149. Knut Müller, Marco Schowalter, Andreas Rosenauer, Jacob Jansen, Kenji Tsuda, John Titantah, and Dirk Lamoen. Refinement of chemically sensitive structure factors using parallel and convergent beam electron nanodiffraction. Journal of Physics: Conference Series, 209(1):012025, 2010.


  150. Knut Müller, Marco Schowalter, Andreas Rosenauer, Oleg Rubel, and Kerstin Volz. Effect of bonding and static atomic displacements on composition quantification in InGaNAs. Phys. Rev. B, 81(7):075315, February 2010.


  151. Suman Pokhrel, Johannes Birkenstock, Marco Schowalter, Andreas Rosenauer, and Lutz Mädler. Growth of Ultrafine Single Crystalline WO3 Nanoparticles Using Flame Spray Pyrolysis. Crystal Growth & Design, 10(2):632--639, 2010.


  152. Andreas Rosenauer, Katharina Gries, Knut Müller, Marco Schowalter, Angelika Pretorius, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Measurement of composition profiles in III-nitrides by quantitative scanning transmission electron microscopy. Journal of Physics: Conference Series, 209(1):012009, 2010.


  153. A. Schaefer, A. Sandell, L.E. Walle, V. Zielasek, M. Schowalter, A. Rosenauer, and M. Bäumer. Chemistry of thin film formation and stability during praseodymium oxide deposition on Si(111) under oxygen-deficient conditions. Surface Science, 604(15–16):1287--1293, 2010. Keyword(s): Praseodymium oxide.


  154. Patrick Sonström, Johannes Birkenstock, Yulia Borchert, Laura Schilinsky, Peter Behrend, Katharina Gries, Knut Müller, Andreas Rosenauer, and Marcus Bäumer. Nanostructured Praseodymium Oxide: Correlation between phase transitions and catalytic activity. ChemCatChem, 2:694--704, 2010.


  155. V.C. Srivastava, K.B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, J. Eckert, A. Rosenauer, and H.-W. Zoch. Microstructure and mechanical properties of partially amorphous Al85Y8Ni5Co2 plate produced by spray forming. Materials Science and Engineering: A, 527(10–11):2747--2758, 2010. Keyword(s): Spray deposition.


  156. B. Butz, R. Schneider, D. Gerthsen, M Schowalter, and A. Rosenauer. Decomposition of 8.5 mol. Y2O3-doped zirconia and its contribution to the degradation of ionic conductivity. Acta Materialia, 57:5480--5490, 2009.


  157. Katharina Gries, Roland Kröger, Christian Kübel, Monika Fritz, and Andreas Rosenauer. Investigations of voids in the aragonite platelets of nacre. Acta Biomaterialia, 5(8):3038--3044, 2009. Keyword(s): Nacre.


  158. Katharina Gries, Roland Kröger, Christian Kübel, Marco Schowalter, Monika Fritz, and Andreas Rosenauer. Correlation of the orientation of stacked aragonite platelets in nacre and their connection via mineral bridges. Ultramicroscopy, 109(3):230--236, 2009. Keyword(s): Nacre.


  159. C Kuebel, K Gries, R Kröger, M Fritz, and A Rosenauer. Microstructure of Aragonite Platelets in Nacre. Microscopy and Microanalysis, 15:900--901, 7 2009.


  160. Knut Müller, Marco Schowalter, Jacob Jansen, Kenji Tsuda, John Titantah, Dirk Lamoen, and Andreas Rosenauer. Refinement of the 200 structure factor for GaAs using parallel and convergent beam electron nanodiffraction data. Ultramicroscopy, 109:802--814, 2009. Keyword(s): GaAs, Structure factor refinement, Bonding, Parallel beam electron diffraction, Convergent beam electron diffraction.


  161. Andreas Rosenauer, Katharina Gries, Knut Müller, Angelika Pretorius, Marco Schowalter, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Measurement of specimen thickness and composition in AlGaN/GaN using high-angle annular dark field images. Ultramicroscopy, 109(9):1171--1182, 2009. Keyword(s): Quantitative STEM Z-contrast imaging.


  162. A. Schaefer, V. Zielasek, Th. Schmidt, A. Sandell, M. Schowalter, O. Seifarth, L. E. Walle, Ch. Schulz, J. Wollschläger, T. Schroeder, A. Rosenauer, J. Falta, and M. Bäumer. Growth of praseodymium oxide on Si(111) under oxygen-deficient conditions. Phys. Rev. B, 80:045414, July 2009.


  163. M. Schowalter, A. Rosenauer, J. T. Titantah, and D. Lamoen. Computation and parametrization of the temperature dependence of Debye-Waller factors for group IV, III-V and II-VI semiconductors. Acta Crystallogr., Sect. A, 65(1):5--17, January 2009. Keyword(s): Debye-Waller factors, semiconductors, force constants, phonon densities of states.


  164. M. Schowalter, A. Rosenauer, J. T. Titantah, and D. Lamoen. Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure. Acta Crystallogr., Sect. A, 65(3):227--231, May 2009.


  165. V. C. Srivastava, K. B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, A. Rosenauer, H.-W. Zoch, and J. Eckert. Spray forming of Bulk Al85Y8Ni5Co2 with co-existing amorphous, nano- and micro-crystalline Structures. Transactions of the Indian In, 62:331--5, 2009.


  166. J. T. Titantah, D. Amoen, M. Schowalter, and A. Rosenauer. Density-functional theory calculation of the electron energy-loss near-edge structure of Li-Intercalated graphite. Carbon, 47:2501--2510, 2009.


  167. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga$_{1-x}$In$_x$As/GaAs quantum wells. J. Appl. Phys., 105(8):084310, 2009. Keyword(s): arsenic compounds, density functional theory, gallium arsenide, gallium compounds, III-V semiconductors, indium compounds, lattice constants, Monte Carlo methods, nanostructured materials, semiconductor heterojunctions, semiconductor quantum wells.


  168. Jo Verbeeck, Peter Schattschneider, and Andreas Rosenauer. Image simulation of high resolution energy filtered TEM images. Ultramicroscopy, 109(4):350--360, 2009. Keyword(s): Image simulation.


  169. A. Pretorius, K. Müller, T. Yamaguchi, R. Kröger, D. Hommel, and A. Rosenauer. Concentration Evaluation in Nanometre-Sized InGaN Islands Using Transmission Electron Microscopy, pages 17--20. Springer Netherlands, 2008.


  170. Bernhard Gehl, Andreas Frömsdorf, Vesna Aleksandrovic, Thomas Schmidt, Angelika Pretorius, Jan-Ingo Flege, Sigrid Bernstorff, Andreas Rosenauer, Jens Falta, Horst Weller, and Marcus Bäumer. Structural and Chemical Effects of Plasma Treatment on Close-Packed Colloidal Nanoparticle Layers. Advanced Functional Materials, 18(16):2398--2410, 2008. Keyword(s): Adsorption, GISAXS, Nanoparticle layers, Plasma, XPS.


  171. Birte Jürgens, Holger Borchert, Kirsten Ahrenstorf, Patrick Sonström, Angelika Pretorius, Marco Schowalter, Katharina Gries, Volkmar Zielasek, Andreas Rosenauer, Horst Weller, and Marcus Bäumer. Colloidally Prepared Nanoparticles for the Synthesis of Structurally Well-Defined and Highly Active Heterogeneous Catalysts. Angewandte Chemie International Edition, 47(46):8946--8949, 2008. Keyword(s): colloids, heterogeneous catalysis, nanoparticles, oxidation, supported catalysts.


  172. D. Litvinov, M. Schowalter, A. Rosenauer, B. Daniel, J. Fallert, W. Löffler, H. Kalt, and M. Hetterich. Determination of critical thickness for defect formation of CdSe/ZnSe heterostructures by transmission electron microscopy and photoluminescence spectroscopy. physica status solidi (a), 205(12):2892--2897, 2008. Keyword(s): 68.37.Lp, 68.37.Og, 68.55.ag, 68.65.Fg, 78.55.Et.


  173. J. Pizarro, P.L. Galindo, E. Guerrero, A. Yanez, M. P. Guerrero, A. Rosenauer, D. L. Sales, and S.I. Molina. Simulation of high angle annular dark field scanning transmission electron microscopy images of large nanostructures. Applied Physics Letters, 93(15):153107--153107-3, 2008. Keyword(s): indium compounds, nanowires, scanning electron microscopy, semiconductor quantum wires, 6146Km, 6837Hk, 6865La.


  174. Andreas Rosenauer, Marco Schowalter, John T. Titantah, and Dirk Lamoen. An emission-potential multislice approximation to simulate thermal diffuse scattering in high-resolution transmission electron microscopy. Ultramicroscopy, 108(12):1504--1513, 2008. Keyword(s): Thermal diffuse scattering.


  175. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Size effects and strain state of Ga(1-x)In(x)As/GaAs multiple quantum wells: Monte Carlo study. Phys. Rev. B, 78:165326, October 2008.


  176. R. Kroeger, T. Paskova, S. Figge, D. Hommel, and A. Rosenauer. Interfacial structure of a-plane GaN grown on r-plane sapphire. Appl. Phys. Lett., 90:081918, 2007.


  177. Radian Popescu, Erich Müller, Matthias Wanner, Dagmar Gerthsen, Marco Schowalter, Andreas Rosenauer, Artur Böttcher, Daniel Löffler, and Patrick Weis. Increase of the mean inner Coulomb potential in Au clusters induced by surface tension and its implication for electron scattering. Phys. Rev. B, 76(23):235411, December 2007.


  178. Angelika Pretorius, Knut Müller, Roland Kröger, Detlef Hommel, Andreas Rosenauer, and Tomohiro Yamaguchi. Concentration measurement in free-standing InGaN nano-islands with transmission electron microscopy. Microscopy and Microanalysis, 13 (Suppl. 03):312--313, 2007.


  179. EHM Rossi, A. Rosenauer, and G. Van Tendeloo. Influence of strain, specimen orientation and background estimation on composition evaluation of InAs/GaAs by TEM. Philosophical Magazine, 87(29):4461--4473, 2007.


  180. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Bond length variation in Ga(1-x)In(x)As crystals from the Tersoff potential. J. Appl. Phys., 101(12):123508, 2007. Keyword(s): gallium arsenide, indium compounds, III-V semiconductors, ab initio calculations, bond lengths, crystal binding, elastic constants, melting point, band structure.


  181. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Temperature effect on the 002 structure factor of ternary Ga(1-x)In(x)As crystals. Phys. Rev. B, 76(7):073303, August 2007.


  182. K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells. J. Appl. Phys., 102(8):083504, 2007. Keyword(s): annealing, gallium arsenide, gallium compounds, III-V semiconductors, impurity distribution, indium compounds, photoluminescence, Rutherford backscattering, semiconductor epitaxial layers, semiconductor heterojunctions, semiconductor quantum wells, transmission electron microscopy.


  183. P. Kruse, M. Schowalter, D. Lamoen, A. Rosenauer, and D. Gerthsen. Determination of the mean inner potential in III-V semiconductors, Si and Ge by density functional theory and electron holography. Ultramicroscopy, 106(2):105--113, 2006. Keyword(s): Mean inner potential.


  184. R. Kröger, C. Kruse, C. Roder, D. Hommel, and A. Rosenauer. Relaxation in crack-free AlN/GaN superlattices. physica status solidi (b), 243(7):1533--1536, 2006. Keyword(s): 42.79.Fm, 68.37.Lp, 68.55.Ln, 68.65.Cd, 71.72.Ff, 83.85.St.


  185. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in $In_{x}Ga_{1-{}x}As$. Phys. Rev. B, 74(16):165306, October 2006.


  186. A. Rosenauer, D. Gerthsen, and V. Potin. Strain state analysis of InGaN/GaN - sources of error and optimized imaging conditions. Phys. Status Solidi A, 203(1):176--184, January 2006. Keyword(s): InGaN/GaN, In, Ga, N, optimised imaging conditions, optimized imaging conditions, aberrations, strain, strain state.


  187. M. Schowalter, A. Rosenauer, and D. Gerthsen. Influence of surface segregation on the optical properties of semiconductor quantum wells. Applied Physics Letters, 88(11):111906--111906-3, 2006. Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, photoluminescence, semiconductor quantum wells, surface segregation, 6835Dv, 7855Cr, 7867De.


  188. M. Schowalter, A. Rosenauer, D. Lamoen, P. Kruse, and D. Gerthsen. Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold. Applied Physics Letters, 88(23):232108--232108-3, 2006. Keyword(s): APW calculations, II-VI semiconductors, III-V semiconductors, ab initio calculations, aluminium compounds, cadmium compounds, density functional theory, electric potential, gallium compounds, gold, indium compounds, monolayers, wide band gap semiconductors, zinc compounds, 7361Ey, 7361Ga.


  189. Meng-Ku Chen, Yung-Chen Cheng, Jiun-Yang Chen, Cheng-Ming Wu, C.C. Yang, Kung-Jen Ma, Jer-Ren Yang, and Andreas Rosenauer. Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells. Journal of Crystal Growth, 279(1-2):55--64, 2005. Keyword(s): A1. Segregation.


  190. Yung-Chen Cheng, Cheng-Ming Wu, C. C. Yang, Gang Alan Li, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, and L. C. Chen. Effects of interfacial layers in InGaN/GaN quantum-well structures on their optical and nanostructural properties. Journal of Applied Physics, 98(1):014317, 2005. Keyword(s): indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, nanostructured materials, photoluminescence, electroluminescence, Stark effect.


  191. T. Li, E. Hahn, D. Gerthsen, A. Rosenauer, A. Strittmatter, L. Reissmann, and D. Bimberg. Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope. Applied Physics Letters, 86(24):241911, 2005. Keyword(s): indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, electron beam effects, transmission electron microscopy, internal stresses.


  192. E. Müller, P. Kruse, D. Gerthsen, M. Schowalter, A. Rosenauer, D. Lamoen, R. Kling, and A. Waag. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography. Applied Physics Letters, 86(15):154108--154108-3, 2005. Keyword(s): II-VI semiconductors, electron holography, nanoparticles, transmission electron microscopy, wide band gap semiconductors, zinc compounds, 4240Lx, 6146+w, 6837Lp.


  193. E. Piscopiello, A. Rosenauer, A. Passaseo, E. H. Montoya Rossi, and G. Van Tendeloo. Segregation in In(x)Ga(1-x)As/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition. Philosophical Magazine, 85(32):3857--3870, 2005.


  194. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron scattering in strained In(x)Ga(1-x)As. Phys. Rev. B, 72:085326, August 2005. Keyword(s): structure factor, strain, InGaAs, In, Ga, As, first-principles calculation, electron scattering.


  195. E. Roventa, G. Alexe, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigations of spatial correlation of CdSe/ZnSe quantum dot stacks grown by molecular beam epitaxy. Journal of Crystal Growth, 278(1-4):316--319, 2005. Note: 13th International Conference on Molecular Beam Epitaxy. Keyword(s): A3. Migration enhanced epitaxy.


  196. Th. Schmidt, E. Roventa, T. Clausen, J. I. Flege, G. Alexe, S. Bernstorff, C. Kübel, A. Rosenauer, D. Hommel, and J. Falta. Ordering mechanism of stacked CdSeZnS(x)Se(1-x) quantum dots: A combined reciprocal-space and real-space approach. Phys. Rev. B, 72:195334, November 2005.


  197. V.A. Volodin, M.D. Efremov, R.S. Matvienko, V.V. Preobrazhenskii, B.R. Semyagin, N.N. Ledentsov, I.R. Soshnikov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Dichroism in transmission of light by an array of self-assembled GaAs quantum wires on a nanofaceted A(311) surface. Physics of the Solid State, 47(2):366--369, 2005.


  198. Yung-Chen Cheng, En-Chiang Lin, Cheng-Ming Wu, C.C. Yang, Jer-Ren Yang, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, L.C. Chen, Chang-Chi Pan, and Jen-Inn Chyi. Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions. Applied Physics Letters, 84(14):2506--2508, 2004. Keyword(s): III-V semiconductors, gallium compounds, indium compounds, photoluminescence, quantum confined Stark effect, semiconductor doping, semiconductor quantum wells, silicon, wide band gap semiconductors, 6172Vv, 6865Fg, 7855Cr, 7867De.


  199. Yung-Chen Cheng, Cheng-Ming Wu, Meng-Kuo Chen, C. C. Yang, Zhe-Chuan Feng, Gang Alan Li, Jer-Ren Yang, Andreas Rosenauer, and Kung-Je Ma. Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers. Applied Physics Letters, 84(26):5422--5424, 2004. Keyword(s): indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, photoluminescence, electroluminescence, monolayers.


  200. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Hetterich, A. Grau, Ph. Gilet, and L. Grenouillet. Determination of the nitrogen distribution in InGaNAs/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 85:3743--3745, 2004.


  201. R. Otto, H. Kirmse, I. Häusler, W. Neumann, A. Rosenauer, D. Bimberg, and L. Muller-Kirsch. Determination of composition and strain field of a III/V quaternary quantum dot system. Applied Physics Letters, 85(21):4908--4910, 2004. Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, internal stresses, nucleation, semiconductor quantum dots, transmission electron microscopy, 6835Gy, 6837Lp, 6865Hb.


  202. M. Schowalter, D. Lamoen, A. Rosenauer, P. Kruse, and D. Gerthsen. First-principles calculations of the mean inner Coulomb potential for sphalerite type II-VI semiconductors. Appl. Phys. Lett., 85(21):4938--4940, November 2004. Keyword(s): mip, sphalerite, semiconductor, mean inner Coulomb potential.


  203. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668--1683, 2003. Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.


  204. P. Kruse, A. Rosenauer, and D. Gerthsen. Determination of the mean inner potential in III-V semiconductors by electron holography. Ultramicroscopy, 96(1):11--16, 2003. Keyword(s): III-V semiconductors.


  205. D. Litvinov, A. Rosenauer, and D. Gerthsen. Transformation of Shockley into Frank stacking faults in a ZnS 0.04 Se 0.96 /GaAs (001) heterostructure. Philosophical Magazine Letters, 83(9):575--581, 2003.


  206. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 83(15):3123--3125, October 2003. Keyword(s): growth, GaSb, Ga, Sb, GaAs, Ga, As, quantum wells, quantum well,.


  207. Elisabeth Kurtz, B. Dal Don, M. Schmidt, H. Kalt, C. Klingshirn, D. Litvinov, A. Rosenauer, and D. Gerthsen. Self-Organized Semiconductor Quantum Islands in A Semiconducting Matrix. In Baldassare Bartolo, editor, Spectroscopy of Systems with Spatially Confined Structures, volume 90 of NATO Science Series, pages 633--651. Springer Netherlands, 2002.


  208. E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, V. Perez-Solorzano, M. Jetter, and F. Scholz. In-Redistribution in a GaInN Quantum Well upon Thermal Annealing. physica status solidi (b), 234(3):738--741, 2002. Keyword(s): 64.75.+g, 66.30.Xj, 68.37.Lp, 78.55.Cr, 81.05.Ea.


  209. D. Litvinov, A. Rosenauer, D. Gerthsen, P. Kratzert, M. Rabe, and F. Henneberger. Influence of the growth procedure on the Cd distribution in CdSe/ZnSe heterostructures: Stranski--Krastanov versus two-dimensional islands. Applied Physics Letters, 81(4):640--642, 2002. Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor heterojunctions, molecular beam epitaxial growth, semiconductor growth, island structure, interface structure, atomic force microscopy, transmission electron microscopy, chemical interdiffusion.


  210. D. Litvinov, A. Rosenauer, D. Gerthsen, N. N. Ledentsov, D. Bimberg, G. A. Ljubas, V. V. Bolotov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, and I. P. Soshnikov. Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface. Applied Physics Letters, 81(6):1080--1082, 2002. Keyword(s): gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor quantum wires, semiconductor epitaxial layers, semiconductor superlattices, transmission electron microscopy, self-assembly, photoluminescence.


  211. D. Litvinov, A. Rosenauer, D. Gerthsen, and H. Preis. Electron microscopy investigation of the defect configuration in CdSe/ZnSe quantum dot structures. Philosophical Magazine A, 82(7):1361--1380, 2002.


  212. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546--6552, 2002. Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.


  213. V. Potin, A. Rosenauer, D. Gerthsen, B. Kuhn, and F. Scholz. Comparison of the Morphology and In Distribution of Capped and Uncapped InGaN Layers by Transmission Electron Microscopy. physica status solidi (b), 234(3):947--951, 2002. Keyword(s): 68.37.Lp, 68.55.Nq, 68.65.Fg, 81.05.Ea.


  214. D. Gerthsen, B. Neubauer, A. Rosenauer, T. Stephan, H. Kalt, O. Schon, and M. Heuken. InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition. Applied Physics Letters, 79(16):2552--2554, 2001. Keyword(s): III-V semiconductors, MOCVD, gallium compounds, indium compounds, lattice constants, photoluminescence, red shift, semiconductor growth, semiconductor quantum wells, spectral line intensity, transmission electron microscopy, wide band gap semiconductors, 6865Fg, 7855Cr, 7867De, 8107St, 8115Gh.


  215. S. Kret, P. Ruterana, A. Rosenauer, and D. Gerthsen. Extracting Quantitative Information from High Resolution Electron Microscopy. physica status solidi (b), 227(1):247--295, 2001. Keyword(s): 68.35.Dv, 68.37.Lp, 68.55.Nq, 68.65.-k, S7.12, S7.14, S8.13.


  216. E. Kurtz, M. Schmidt, M. Baldauf, S. Wachter, M. Grün, H. Kalt, C. Klingshirn, D. Litvinov, A. Rosenauer, and D. Gerthsen. Suppression of lateral fluctuations in CdSe-based quantum wells. Applied Physics Letters, 79(8):1118--1120, 2001. Keyword(s): cadmium compounds, II-VI semiconductors, semiconductor quantum wells, fluctuations, photoluminescence, semiconductor growth, spectral line breadth, molecular beam epitaxial growth.


  217. N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Soshnikov, V. Shchukin, V. Ustinov, A. Egorov, A. Zukov, V. Volodin, M. Efremov, V. Preobrazhenskii, B. Semyagin, D. Bimberg, and Zh. Alferov. Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces. Journal of Electronic Materials, 30:463--470, 2001. Keyword(s): Chemie und Materialwissenschaften.


  218. D. Litvinov, A. Rosenauer, D. Gerthsen, H. Preis, K. Fuchs, and S. Bauer. Growth and vertical correlation of CdSe/ZnSe quantum dots. Journal of Applied Physics, 89(7):3695--3699, 2001. Keyword(s): II-VI semiconductors, cadmium compounds, island structure, molecular beam epitaxial growth, reflection high energy electron diffraction, semiconductor epitaxial layers, semiconductor growth, semiconductor quantum dots, transmission electron microscopy, zinc compounds, 6865Hb, 8105Dz, 8107Ta, 8115Hi.


  219. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in In(x)Ga(1-x)As/GaAs$ Stranski-Krastanow layers}. Phys. Rev. B, 64(24):245334, December 2001.


  220. A Rosenauer, D Van Dyck, M Arzberger, and G Abstreiter. Compositional analysis based on electron holography and a chemically sensitive reflection. Ultramicroscopy, 88(1):51--61, 2001. Keyword(s): Compositional analysis.


  221. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Investigation of In segregation in InAs/AlAs quantum-well structures. Appl. Phys. Lett., 79(26):4426--4428, December 2001. Keyword(s): segregation, InAs, In, As, InAs/AlAs, AlAs, Al, As, quantum-well.


  222. I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, Yu.G. Musikhin, A.P. Kartashova, A.S. Usikov, A.F. Tsatsul’nikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A.C. Plaut, A.A. Hoffmann, and D. Bimberg. Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots. Semiconductors, 34(4):481--487, 2000.


  223. D. Litvinov, A. Rosenauer, D. Gerthsen, and N. N. Ledentsov. Character of the Cd distribution in ultrathin CdSe layers in a ZnSe matrix. Phys. Rev. B, 61:16819--16826, June 2000.


  224. N. Peranio, A. Rosenauer, D. Gerthsen, S. V. Sorokin, I. V. Sedova, and S. V. Ivanov. Structural and chemical analysis of CdSe/ZnSe nanostructures by transmission electron microscopy. Phys. Rev. B, 61:16015--16024, June 2000.


  225. A. Rosenauer, W. Oberst, D. Litvinov, D. Gerthsen, A. Förster, and R. Schmidt. Structural and chemical investigation of $In_{0.6}Ga_{0.4}As$ Stranski-Krastanow layers buried in GaAs by transmission electron microscopy. Phys. Rev. B, 61(12):8276--8288, March 2000.


  226. D. Schikora, S. Schwedhelm, D. J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg. Investigations on the Stranski--Krastanow growth of CdSe quantum dots. Applied Physics Letters, 76(4):418--420, 2000. Keyword(s): semiconductor quantum dots, molecular beam epitaxial growth, self-assembly, island structure, stacking faults, cadmium compounds, II-VI semiconductors, reflection high energy electron diffraction, photoluminescence, monolayers.


  227. I.P. Soshnikov, V.V. Lundin, A.S. Usikov, I.P. Kalmykova, N.N. Ledentsov, A. Rosenauer, B. Neubauer, and D. Gerthsen. Specifics of MOCVD formation of In(x)Ga(1−x)N inclusions in a GaN matrix. Semiconductors, 34(6):621--625, 2000.


  228. M. Strassburg, Th. Deniozou, A. Hoffmann, R. Heitz, U. W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, K. Lischka, and D. Schikora. Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structures. Applied Physics Letters, 76(6):685--687, 2000. Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor quantum dots, semiconductor heterojunctions, island structure, transmission electron microscopy, monolayers, photoluminescence.


  229. A F Tsatsul'nikov, I L Krestnikov, W V Lundin, A V Sakharov, A P Kartashova, A S Usikov, Zh I Alferov, N N Ledentsov, A Strittmatter, A Hoffmann, D Bimberg, I P Soshnikov, D Litvinov, A Rosenauer, D Gerthsen, and A Plaut. Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition. Semiconductor Science and Technology, 15(7):766, 2000.


  230. A. Rosenauer and D. Gerthsen. Atomic Scale Strain and Composition Evaluation from High-Resolution Transmission Electron Microscopy Images. In Peter W. Hawkes, editor, , volume 107 of Advances in Imaging and Electron Physics, pages 121--230. Elsevier, 1999.


  231. R. Engelhardt, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, and D. Gerthsen. Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures. Journal of Applied Physics, 86(10):5578--5583, 1999. Keyword(s): II-VI semiconductors, MOCVD coatings, cadmium compounds, excitons, plastic deformation, quantum well lasers, zinc compounds, 4255Px, 4260By, 7135-y, 8530Vw.


  232. I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots. Phys. Rev. B, 60:8695--8703, September 1999.


  233. D. Luerssen, R. Bleher, H. Richter, Th. Schimmel, H. Kalt, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, K. Ohkawa, B. Jobst, and D. Hommel. Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures. Applied Physics Letters, 75(25):3944--3946, 1999. Keyword(s): zinc compounds, magnesium compounds, II-VI semiconductors, wide band gap semiconductors, semiconductor quantum wells, stacking faults, defect states, interface states, interface structure, photoluminescence, atomic force microscopy, transmission electron microscopy, excitons.


  234. A. Rosenauer and D. Gerthsen. Composition evaluation by the lattice fringe analysis method using defocus series. Ultramicroscopy, 76(1):49--60, 1999.


  235. E Schomburg, S Brandl, K.F Renk, N.N Ledentsov, V.M Ustinov, A.E Zhukov, A.R Kovsh, A.Yu Egorov, R.N Kyutt, B.V Volovik, P.S Kop'ev, Zh.I Alferov, A Rosenauer, D Litvinov, D Gerthsen, D.G Pavel'ev, and Y.I Koschurinov. Miniband transport in a semiconductor superlattice with submonolayer barriers. Physics Letters A, 262(4-5):396--401, 1999. Keyword(s): 85.30.Vw.


  236. M. Strassburg, R. Heitz, V. Türck, S. Rodt, U.W. Pohl, A. Hoffmann, D. Bimberg, I.L. Krestnikov, V.A. Shchukin, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices. Journal of Electronic Materials, 28(5):506--514, 1999. Keyword(s): CdSe/(Zn, Mg)(S, Se), excitonic localization, gain, resonant waveguiding.


  237. A.F. Tsatsul’Nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maximov, A.Yu Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, P.S. Kop’Ev, Zh.I. Alferov, I.A. Kozin, M.V. Belousov, I.P. Soshnikov, P. Werner, D. Litvinov, U. Fischer, A. Rosenauer, and D. Gerthsen. Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition. Journal of Electronic Materials, 28(5):537--541, 1999. Keyword(s): Lasing, quantum dots, submonolayer, vertical correlation.


  238. T. Walter, A. Rosenauer, R. Wittmann, D. Gerthsen, F. Fischer, T. Gerhard, A. Waag, G. Landwehr, P. Schunk, and T. Schimmel. Structural properties of BeTe/ZnSe superlattices. Phys. Rev. B, 59:8114--8122, March 1999.


  239. Stephan Kaiser, Herbert Preis, Wolfgang Gebhardt, Oliver Ambacher, Helmut Angerer, Martin Stutzmann, Andreas Rosenauer, and Dagmar Gerthsen. Quantitative Transmission Electron Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al$_{ extbf{2}}$O$_{ extbf{3}}$(0001). Japanese Journal of Applied Physics, 37(Part 1, No. 1):84--89, 1998.


  240. B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, and M. Stutzmann. Analysis of composition fluctuations on an atomic scale in Al(0.25)Ga(0.75)N by high-resolution transmission electron microscopy. Applied Physics Letters, 73(7):930--932, 1998. Keyword(s): aluminium compounds, gallium compounds, wide band gap semiconductors, III-V semiconductors, stoichiometry, fluctuations, transmission electron microscopy, lattice constants, semiconductor heterojunctions, interface structure, semiconductor epitaxial layers.


  241. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Förster. Composition evaluation by lattice fringe analysis. Ultramicroscopy, 72:121--133, 1998.


  242. M. Strassburg, V. Kutzer, U. W. Pohl, A. Hoffmann, I. Broser, N. N. Ledentsov, D. Bimberg, A. Rosenauer, U. Fischer, D. Gerthsen, I. L. Krestnikov, M. V. Maximov, P. S. Kop'ev, and Zh.I. Alferov. Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix. Applied Physics Letters, 72(8):942--944, 1998. Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor quantum dots, island structure, monolayers, refractive index, transmission electron microscopy, biexcitons, excitons, phonon spectra, quantum well lasers, stimulated emission.


  243. M. Hetterich, M. Grün, W. Petri, C. Märkle, C. Klingshirn, A. Wurl, U. Fischer, A. Rosenauer, and D. Gerthsen. Elastic and plastic strain relaxation in ultrathin CdS/ZnS quantum-well structures grown by molecular-beam epitaxy. Phys. Rev. B, 56:12369--12374, November 1997.


  244. Marcus J. Kastner, Gabriella Leo, Doris Brunhuber, Andreas Rosenauer, Herbert Preis, Berthold Hahn, Markus Deufel, and Wolfgang Gebhardt. Investigations on strain relaxation of ZnS(x)Se(1−x) layers grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 172(1-2):64--74, 1997.


  245. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Forster. Composition evaluation of In(x)Ga(1-x)As Stranski-Krastanow-island structures by strain state analysis. Applied Physics Letters, 71(26):3868--3870, 1997. Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, island structure, transmission electron microscopy, lattice constants, molecular beam epitaxial growth, semiconductor epitaxial layers, finite element analysis, segregation, semiconductor growth.


  246. A. Rosenauer, T. Remmele, D. Gerthsen, K. Tillmann, and A. Förster. Atomic scale strain measurements by the digital analysis of transmission electron microscopic lattice images. Optik (Stuttgart), 105(3):99--107, 1997. Note: Eng. Keyword(s): Experimental study, TEM, Electron microscopy, High-resolution methods, Measuring methods, Stress analysis, Layer thickness, Crystals, Semiconductor materials.


  247. U. Woggon, W. Langbein, J. M. Hvam, A. Rosenauer, T. Remmele, and D. Gerthsen. Electron microscopic and optical investigations of the indium distribution in GaAs capped In(x)Ga(1-x)As islands. Applied Physics Letters, 71(3):377--379, 1997. Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, buried layers, transmission electron microscopy, photoluminescence, molecular beam epitaxial growth, semiconductor growth, semiconductor epitaxial layers.


  248. Marcus J. Kastner, Berthold Hahn, Claus Auchter, Markus Deufel, Andreas Rosenauer, and Wolfgang Gebhardt. Structural characterization and MOVPE growth of ZnCdSe and ZnSSe layers, quantum wells and superlattices. Journal of Crystal Growth, 159(1-4):134--137, 1996. Note: Proceedings of the seventh international conference on II-VI compouds and devices.


  249. A. Rosenauer, S. Kaiser, T. Reisinger, J. Zweck, W. Gebhardt, and D. Gerthsen. Digital analysis of high resolution transmission electron microscopy lattice images. Optik, 102:63--69, 1996.


  250. A. Rosenauer, T. Reisinger, F. Franzen, G. Schutz, B. Hahn, K. Wolf, J. Zweck, and W. Gebhardt. Transmission electron microscopy and reflected high-energy electron-diffraction investigation of plastic relaxation in doped and undoped ZnSe/GaAs(001). Journal of Applied Physics, 79(8):4124--4131, 1996. Keyword(s): DISLOCATIONS, DOPED MATERIALS, EPITAXIAL LAYERS, MOLECULAR BEAM EPITAXY, PLASTICITY, RHEED, STRESS RELAXATION, TEM, VPE, ZINC SELENIDES.


  251. K. Tillmann, A. Thust, M. Lentzen, P. Swiatek, A. Förster, K. Urban, W. Laufs, D. Gerthsen, T. Remmele, and A. Rosenauer. Determination of segregation, elastic strain and thin-foil relaxation in In(x)Ga(1-x)As islands on GaAs(001) by high resolution transmission electron microscopy. Philosophical Magazine Letters, 74(5):309--315, 1996.


  252. W.S. Kuhn, A. Lusson, B. Qu'Hen, C. Grattepain, H. Dumont, O. Gorochov, S. Bauer, K. Wolf, M. Wörz, T. Reisinger, A. Rosenauer, H.P. Wagner, H. Stanzl, and W. Gebhardt. The metal organic vapour phase epitaxy of ZnTe: III. Correlation of growth and layer properties. Progress in Crystal Growth and Characterization of Materials, 31(1-2):119--177, 1995.


  253. S. Lankes, B. Hahn, C. Meier, F. Hierl, M. Kastner, A. Rosenauer, and W. Gebhardt. Photoreflectance measurements on ZnSe/ZnS0.25Se0.75SQW. physica status solidi (a), 152(1):123--131, 1995.


  254. A. Rosenauer, T. Reisinger, E. Steinkirchner, J. Zweck, and W. Gebhardt. High resolution transmission electron microscopy determination of Cd diffusion in CdSeZnSe single quantum well structures. Journal of Crystal Growth, 152(1-2):42--50, 1995.


  255. K Wolf, S Jilka, A Rosenauer, G Schutz, H Stanzl, T Reisinger, and W Gebhardt. High-resolution X-ray diffraction investigations of epitaxially grown ZnSe/GaAs layers. Journal of Physics D: Applied Physics, 28(4A):A120, 1995.


  256. M. Grün, M. Hetterich, C. Klingshirn, A. Rosenauer, J. Zweck, and W. Gebhardt. Strain relief and growth modes in wurtzite type epitaxial layers of CdSe and CdS and in CdSe/CdS superlattices. Journal of Crystal Growth, 138(1-4):150--154, 1994.


  257. A. Naumov, H. Stanzl, K. Wolf, A. Rosenauer, S. Lankes, and W. Gebhardt. Exciton recombination in ZnSexTe1−x/ZnTe {QWs} and ZnSexTe1−x epilayers grown by metalorganic vapour phase epitaxy. Journal of Crystal Growth, 138(1-4):595--600, 1994.


  258. S. Bauer, A. Rosenauer, P. Link, W. Kuhn, J. Zweck, and W. Gebhardt. Misfit dislocations in epitaxial ZnTe/GaAs (001) studied by {HRTEM}. Ultramicroscopy, 51(1-4):221--227, 1993.


  259. M. Grun, C. Klingshirn, A. Rosenauer, J. Zweck, and W. Gebhardt. Spatial confinement of misfit dislocations at the interface of CdSe/GaAs(111). Applied Physics Letters, 63(21):2947--2948, 1993. Keyword(s): 6172Ff, 6855Ln, 6865+g, BURGERS VECTOR, CADMIUM SELENIDES, ELECTRON MICROSCOPY, EPITAXIAL LAYERS, GALLIUM ARSENIDES, HETEROSTRUCTURES, INTERFACE STRUCTURE, MISFIT DISLOCATIONS.


Conference articles
  1. Tim Grieb, Christoph Mahr, Florian F. Krause, Knut Müller-Caspary, Marco Schowalter, Martin Eickhoff, and Andreas Rosenauer. Measuring electric fields with 4D-STEM: Demonstration of pitfalls by the example of GaN and SiGe. In European Microscopy Congress (EMC) 2024, Kopenhagen (Dänemark), [poster], 2024. Keyword(s): Konferenz.


  2. Christoph Mahr, Florian F. Krause, Jakob Stahl, Beeke Gerken, Marco Schowalter, Tim Grieb, Lutz Mädler, and Andreas Rosenauer. Characterization of structure and mixing in nanoparticle hetero-aggregates using convolutional neural networks: 3D-reconstruction versus 2D-projection. In European Microscopy Congress (EMC) 2024, Kopenhagen (Dänemark), [talk], 2024. Keyword(s): Konferenz.


  3. Marco Schowalter, Alexander Karg, Christoph Mahr, Martin Eickhoff, and Andreas Rosenauer. Computation of concentration dependent properties of $\varepsilon$/$\kappa$-(InGa)$_2$O$_3$ and its application to the measurement of strain in heterostructures. In International Workshop on Gallium Oxide and Related Materials (IWGO), Berlin [poster], 2024. Keyword(s): Konferenz.


  4. Tim Grieb, Florian F. Krause, Thorsten Mehrtens, Christoph Mahr, Marco Schowalter, and Andreas Rosenauer. GaN atomic electric fields from STEM: Panther vs. EMPAD. In Microscopy Conference (MC) 2023, Darmstadt, [Poster IM6.P002], 2023.


  5. Florian F. Krause, Tim Grieb, Christoph Mahr, Marco Schowalter, Thorsten Mehrtens, Rudolpho Hötzel, Stephan Figge, Martin Eickhoff, and Andreas Rosenauer. Electrical Fields in AlN/GaN-Nanowires Measured with Aberration-Corrected 4D-STEM. In Microscopy Conference (MC) 2023, Darmstadt, [Vortrag IM6.003], 2023.


  6. Florian F. Krause, Christoph Mahr, Marco Schowalter, and Andreas Rosenauer. An adaptive scanning scheme for dose efficient acquisition of EDX-maps. In International Microscopy Congress (IMC20) 2023, Busan (Südkorea), [poster AS-08.P.0625], 2023.


  7. Christoph Mahr, Beeke Gerken, Jakob Stahl, Valentin Baric, Lutz Mädler, and Andreas Rosenauer. Investigation of 2D and 3D mixing properties in nanoparticle hetero-aggregates using convolutional neural networks. In International Microscopy Congress (IMC20) 2023, Busan (Südkorea), [talk SS-05.1.0445], 2023. Keyword(s): Konferenz.


  8. Christoph Mahr, Tim Grieb, Florian F. Krause, Marco Schowalter, and Andreas Rosenauer. Can a difference in mean inner potential be measured from a shift of the central disc in nano-beam electron diffraction?. In Microscopy Conference (MC) 2023, Darmstadt, [Poster IM6.P001], 2023.


  9. Marco Schowalter, Patrick Vogt, Justin Bich, Alexander Karg, Christoph Mahr, Tim Grieb, Florian F. Krause, Martin Eickhoff, and Andreas Rosenauer. Composition and strain of pseudomorphic $\alpha$-(AlGa)$_2$O$_3$ on sapphire (0001) substrates. In Microscopy Conference (MC) 2023, Darmstadt, [Poster MS3.P001], 2023.


  10. Jakob Stahl, Tobias Tabeling, Christoph Mahr, Suman Pokhrel, Andreas Rosenauer, Udo Fritsching, and Lutz Mädler. Quantification of the Mixing Process of Two Nanoparticle Producing Flames for the Design of Hetero-Contacts. In PARTEC, International Congress on Particle Technology 2023, Nürnberg, [Vortrag], 2023.


  11. Tim Grieb, Thorsten Mehrtens, Florian F. Krause, Christoph Mahr, Marco Schowalter, Dennis Marquardt, and Andreas Rosenauer. Composition Analysis of III/V Semiconductors by Quantitative Scanning Transmission Electron Microscopy. In DGKK/DEMBE 2022, Bremen, [talk], 2022. Keyword(s): Konferenz.


  12. Mehtap Oezaslan, Alexandra Dworzak, Christoph Mahr, Paul Paciok, Andreas Rosenauer, and Marc Heggen. Effect of the Potentiostatic and Potentiodynamic Dealloying on the Structure and Chemical Distribution of Ag Atoms in Au-Enriched Nanoparticles. In The Electrochemical Society Meeting (ECS) 2022, Atlanta (USA), [Vortrag C04.795], 2022.


  13. Florian F. Krause, Christoph Mahr, Marco Schowalter, Beeke Gerken, Thorsten Mehrtens, Andreas Rosenauer, Dirk van Dyck, Hamish G. Brown, Benjamin D. Forbes, Leslie J. Allen, Juri and Barthel, Joachim Meyer, Knut Urban, and Rafal Dunin-Borkowski. ISTEM: strongly incoherent imaging for ultra-high resolution TEM (Vortrag). In 19th International Microscopy Congress (IMC) 2018, Sydney (Australien) [Vortrag IT9.2.357], 2018.


  14. Florian F. Krause, Marco Schowalter, Tim Grieb, Christoph Mahr, and Andreas Rosenauer. tibaDESC: precise measurement of diffraction pattern distortions for quantitative STEM (Poster). In 19th International Microscopy Congress (IMC) 2018, Sydney (Australien) [Poster IT9.316], 2018.


  15. Christoph Mahr, Paromita Kundu, Anastasia Lackmann, Daniele Zanaga, Marco Schowalter, Martin Schwan, Sara Bals, Arne Wittstock, and Andreas Rosenauer. Residual silver in dealloyed nanoporous gold: quantitative spatial distribution and influence on structure and catalytic performance (Kurzvortrag, Poster). In 19th International Microscopy Congress (IMC) 2018, Sydney (Australien) [Kurzvortrag PS4.862], 2018.


  16. Christoph Mahr, Knut Müller-Caspary, Martin Simson, Robert Ritz, Matthias Graf, Anastasia Lackmann, Tim Grieb, Marco Schowalter, Florian F Krause, Thorsten Mehrtens, Arne Wittstock, Heike Soltau, Jörg Weissmüller, and Andreas Rosenauer. Measurement of local crystal lattice strain variations in dealloyed nanoporous gold (Vortrag). In 19th International Microscopy Congress (IMC) 2018, Sydney (Australien) [Vortrag PS1.3.173], 2018.


  17. N. Chery, N. T. Huong, M.P. Chauvat, B. Damilano, B. Gil, T. Grieb, M. Schowalter, A. Rosenauer, X. Portier, and P. Ruterana. Local structure and composition versus the optical properties of InGaN/GaN QWs for emission in and past the green gap. In MSM XX 2017, Oxford (GB), 2017.


  18. N. Gauquelin, K.H.W. van den Bos, A. Beche, F.F. Krause, I. Lobato, S. Lazar, A. Rosenauer, S. Van Aert, and J. Verbeeck. Determining oxygen relaxations at an interface: A comparative study between transmission electron microscopy techniques. In Microscopy Conference 2017 (MC 2017), Lausanne (CH), 2017.


  19. A. Karg, M. Kracht, M. Schowalter, B. Gerken, J. Bläsing, M. Rohnke, J. Schörmann, J. Janek, A. Rosenauer, and M. Eickhoff. MBE-growth and structural properites of e-Ga2O3. In Proceedings of the International Workshop on Gallium Oxide and related materials (IWGO 2017) in Parma, 2017.


  20. Florian F. Krause, Marco Schowalter, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Effects of instrument imperfections on high resolution quantitative scanning transmission electron microscopy (Poster). In 4th Conference on Frontiers of Aberration Corrected Electron Microscopy (PICO 2017), Vaalsbroek (NL), 2017.


  21. Florian F Krause, Marco Schowalter, Marcus Müller, Jan-Philipp Ahl, Tilman Schimpke, Sebastian Metzner, Joachim Hertkorn, Frank Bertram, Thorsten Mehrtens, Peter Veit, Karl Engl, Martin Strassburg, Jürgen Christen, and Andreas Rosenauer. Structural and copositional multiprobe investigations of AlInGaN semiconductor structures and core-shell nanorod LEDs (Invited Talk). In Society of Photo-Optical Instrumentation Engineers Photonics West 2017 (SPIE Photonics West 2017) , San Francisco (USA), 2017.


  22. Paromita Kundu, Daniele Zanaga, Christoph Mahr, Anastasia Lackmann, Marco Schowalter, Martin Schwan, Andreas Rosenauer, Arne Wittstock, and Sara Bals. 3D Microstructural and Quantitative Compositional Analysis of Residual Ag in Nanoporous Au catalyst by STEM-EDS Tomography. In Microscience Microscopy Congress 2017 (MMC 2017), Manchester (UK), [Talk], 2017.


  23. Christoph Mahr, Paromita Kundu, Anastasia Lackmann, Daniele Zanaga, Marco Schowalter, Martin Schwan, Sara Bals, Arne Wittstock, and Andreas Rosenauer. Residual Silver in Dealloyed Nanoporous Gold: Quantitative Spatial Distribution and Influence on Structure and Catalytic Performance. In Microscopy Conference 2017 (MC 2017), Lausanne (CH), [Talk], 2017.


  24. M. Müller, S. Metzner, T. Hempel, P. Veit, F. Bertram, F F Krause, T Mehrtens, K. Müller-Caspary, A Rosenauer, T. Schimpke, A. Avramescu, M. Strassburg, and J. Christen. Accessing optical and compositional properties of InGaN/GaN core-shell nanorods at the nanometer scale (Talk). In 9th International Conference on Materials for Advanced Technologies (ICMAT 2017) , Singapur (Singapur), 2017.


  25. M. Müller, S. Metzner, T. Hempel, P. Veit, F. Bertram, F F Krause, T Mehrtens, K. Müller-Caspary, A Rosenauer, T. Schimpke, A. Avramescu, M. Strassburg, and J. Christen. Nano-scale correlation of the optical, structural, and compositional properties of InGaN/GaN core-shell nanorod LEDs (Talk). In 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIDA 2017) , Yokohama (J), 2017.


  26. Knut Müller-Caspary, Martial Duchamp, Florian F. Krause, Armand Beche, Marco Schowalter, Florian Winkler, Stefan Löffler, Heike Soltau, Josef Zweck, Peter Schattschneider, Johan Verbeeck, Sandra Van Aert, Rafal Dunin-Borkowski, and Andreas Rosenauer. Mapping atomic electric fields and charge densities by four-dimensional STEM (Invited Talk). In 24th Congress & General Assembly of the International Union of Crystallography (IUCR 2017), Hyderabat (Indien), 2017.


  27. Knut Müller-Caspary, Martial Duchamp, Florian F. Krause, Armand Beche, Florian Winkler, Stefan Löffler, Heike Soltau, Josef Zweck, Johan Verbeeck, Sandra Van Aert, Rafal Dunin-Borkowski, and Andreas Rosenauer. Mapping atomic electric fields and charge densities by momentum-resolved STEM (Invited Talk). In Microscopy Conference 2017 (MC 2017), Lausanne (CH), 2017.


  28. Jan Mü�ener, Pascal Hille, Jörg Schörmann, Jörg Teubert, Bruno Gayral, Joel Bleuse, Eva Monroy, Tim Grieb, Andreas Rosenauer, and Martin Eickhoff. Bias-controlled optical transitions in GaN/AlN nanowire heterostructures. In Nanowire Week 2017, Lund (S), 2017.


  29. Andreas Rosenauer, Florian F Krause, Marco Schowalter, Elias Goldmann, Frank Jahnke, Matthias Paul, Michael Jetter, Peter Michler, Marcus Müller, Peter Veit, Jürgen Christen, Tilman Schimpke, Adrian Avramescu, Martin Strassburg, and Jan-Philipp Ahl. Quantitative STEM: Comparative Studies of Composition and Optical Properties of Semiconductor Quantum Structures (Invited Talk). In Microscopy & Microanalysis 2017 Meeting (M&M 2017), St. Louis (USA), 2017.


  30. M. Schowalter, C. Carmesin, M. Lorke, D. Mourad, T. Grieb, K. Müller-Caspary, M. Yacob, J. P. Reithmaier, M. Benyoucef, A. Rosenauer, and F. Jahnke. The influence of morphology of InAs/InAlGaAs quantum dots emitting in the low-loss telecom wavelength range. In MC 2017, Lausanne (CH), 2017.


  31. Marco Schowalter, Beeke Geerken, Florian F. Krause, Tim Grieb, Knut Müller-Caspary, Christoph Mahr, Thorsten Mehrtens, Annick De Backer, Sandra Van Aert, and Andreas Rosenauer. A comparison of the simulation based and statistics based atomic counting techniques (Poster). In 4th Conference on Frontiers of Aberration Corrected Electron Microscopy (PICO 2017), Vaalsbroek (NL), 2017.


  32. Marco Schowalter, Florian Fritz Krause, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Influence of Microscope Imperfections and Detector Characteristics on Quantification of HAADF STEM images (Invited Talk). In 5th Annual Conference of AnalytiX (AnalytiX 2017), Fukuoka (J), 2017.


  33. K.H.W. van den Bos, N. Gauquelin, A. Beche, F.F. Krause, I. Lobato, S. Lazar, A. Rosenauer, S. Van Aert, and J. Verbeeck. Determining oxygen relaxations at an interface: A comparative study between transmission electron microscopy techniques (Talk). In Microscience Microscopy Congress 2017 (MMC 2017), Manchester (UK), 2017.


  34. Marcos Alania, Annick De Backer, Ivan Lobato, Florian F. Krause, Dirk Van Dyck, Andreas Rosenauer, and Sandra Van Aert. How precise can atoms of a nanocluster be located in 3D from a tilt series of scanning transmission electron microscopy images? (Poster). In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.


  35. Tim Grieb, Florian F. Krause, Christoph Mahr, Knut Müller, and Andreas Rosenauer. Optimization of NBED simulations to predict experimental disc-detection measurements (Talk). In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.


  36. F. F. Krause, A. Rosenauer, M. Schowalter, K. Müller-Caspary, T. Mehrtens, A. Beche, K.W.H. van den Bos, S. Van Aert, J. Verbeeck, and D. Van Dyck. Increased Resolution with the ISTEM mode (Talk). In Treffen des Arbeitskreises Hochauflösung (AKHREM) 2016, Berlin (D), 2016.


  37. Florian F. Krause, Marco Schowalter, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Measurement of Diffraction Pattern Distortions for Quantitative STEM (Poster). In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.


  38. Florian F. Krause, Marco Schowalter, Thorsten Mehrtens, Knut Müller-Caspary, Armand Beche, Karel W. H. van den Bos, Sandra Van Aert, Johan Verbeeck, and Andreas Rosenauer. ISTEM: A Realisation of Incoherent Imaging for Ultra-High Resolution TEM beyond the Classical Information Limit (Talk). In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.


  39. Christoph Mahr, Knut Müller-Caspary, Tim Grieb, Florian F. Krause, Marco Schowalter, Anastasia Lackmann, Arne Wittstock, and Andreas Rosenauer. Measurement of strain in nanoporous gold using nano-beam electron diffraction. In European Microscopy Congress 2016 (EMC 2016), Lyon (F), [Poster IM06-352], 2016.


  40. Christoph Mahr, Knut Müller-Caspary, Andreas Oelsner, Andreas Rosenauer, and Pavel Potapov. STEM strain measurement from a stream of diffraction patterns recorded on a pixel-free delay-line detector [Talk]. In EMAG conference 2016, Durham, UK, 2016.


  41. M. Müller, S. Metzner, T. Hempel, P. Veit, F. Bertram, F F Krause, T. Mehrtens, K. Müller-Caspary, A Rosenauer, T. Schimpke, A. Avramescu, M. Strassburg, and J. Christen. Optical, structural and compositional nano-scale characterization of InGaN/GaN core-shell microrod heterostructucom (Talk). In Proceedings of the Society of Photo-Optical Instrumentation Engineers Photonics West 2016 (SPIE Photonics West 2016) , San Francisco (USA), 2016.


  42. M. Müller, S. Metzner, T. Hempel, P. Veit, F. Bertram, F F Krause, T Mehrtens, K. Müller-Caspary, A Rosenauer, T. Schimpke, A. Avramescu, M. Strassburg, and J. Christen. Optical, structural and compositional nano-scale characterization of InGaN/GaN core-shell microrod heterostructures (Talk). In Society of Photo-Optical Instrumentation Engineers Photonics West 2016 (SPIE Photonics West 2016) , San Francisco (USA), 2016.


  43. Knut Müller-Caspary, Florian F. Krause, Armand Béché, Martial Duchamp, Tim Grieb, Marco Schowalter, Stefan Löffler, Oliver Oppermann, Vadim Migunov, Florian Winkler, Heike Soltau, Lothar Strüder, Josef Zweck, Peter Schattschneider, Rafal Dunin-Borkowski, Johan Verbeeck, and Andreas Rosenauer. Momentum-resolved STEM: Measurement of atomic electric fields and angular multi-range analysis [Invited talk]. In The XXXVII Annual Meeting of the Electron Microscopy Society of India - International Conference on Electron Microscopy, 2016. Keyword(s): DPC, iris, picodiffraction, electric fields, ARSTEM.


  44. Knut Müller-Caspary, Florian F. Krause, Armand Béché, Martial Duchamp, Marco Schowalter, Stefan Löffler, Vadim Migunov, Florian Winkler, Martin Huth, Robert Ritz, Sebastian Ihle, Martin Simson, Henning Ryll, Heike Soltau, Lothar Strüder, Josef Zweck, Peter Schattschneider, Rafal Dunin-Borkowski, Johan Verbeeck, and Andreas Rosenauer. Measurement of Atomic Electric Fields by Scanning Transmission Electron Microscopy (STEM) Employing Ultrafast Detectors. In Microscopy and Microanalysis 2016, Columbus (OH/USA), [Invited Talk], volume 22, pages 484--485, July 24-28th 2016. Microscopy Society of America. Keyword(s): DPC, pnccd.


  45. Knut Müller-Caspary, Thorsten Mehrtens, Marco Schowalter, Tim Grieb, Andreas Rosenauer, Florian F. Krause, Christoph Mahr, and Pavel Potapov. ImageEval. A software for the processing, evaluation and acquisition of (S)TEM images. In European Microscopy Congress 2016, Lyon (F), [Poster IM03-286], 2016.


  46. K. Müller-Caspary, O. Oppermann, T. Grieb, A. Rosenauer, F. F. Krause, M. Schowalter, T. Mehrtens, P. Potapov, A. Beyer, and K. Volz. Angle-resolved scanning transmission electron microscopy employing an iris aperture (Poster). In Electron Microscopy and Analysis Group Annual Conference (EMAG 2016), Durham (UK), 2016.


  47. Knut Müller-Caspary, Oliver Oppermann, Tim Grieb, Andreas Rosenauer, Marco Schowalter, Florian F. Krause, Thorsten Mehrtens, Pavel Potapov, Andreas Beyer, and Kerstin Volz. Angle-resolved Scanning Transmission Electron Microscopy (ARSTEM) for materials analysis. In European Microscopy Congress 2016, Lyon (F), [Poster IM06-350], 2016.


  48. A. Rosenauer, K. Müller-Caspary, M. Schowalter, T. Grieb, F. F. Krause, and T. Mehrtens. Analysis of composition and strain in semiconductor nanostructures by quantitative HAADF-STEM and imaging STEM. In PCSI 2016, Santa Barbara (US), 2016.


  49. A. Rosenauer, K. Müller-Caspary, M. Schowalter, T. Grieb, F. F. Krause, T. Mehrtens, A. Beche, J. Verbeeck, V. Galioit, J. Zweck, Stefan Löffler, and Peter Schattschneider. Quantitative STEM - From composition to atomic electric fields (Invited Talk). In Electron Microscopy and Analysis Group Annual Conference (EMAG 2016), Durham (UK), 2016.


  50. Andreas Rosenauer, Knut Müller-Caspary, Marco Schowalter, Tim Grieb, Florian F. Krause, Thorsten Mehrtens, Armand Beche, Johan Verbeeck, Josef Zweck, Stefan Löffler, Peter Schattschneider, Marcus Müller, Peter Veit, Sebastian Metzner, Frank Bertram, Tilman Schimpke, Martin Strassburg, and Rafal Dunin-Borkowski. Quantitative STEM -- From composition to atomic electric fields [Invited Talk]. In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.


  51. Marco Schowalter, Beeke Geerken, Florian F. Krause, Tim Grieb, Knut Müller-Caspary, Christoph Mahr, Thorsten Mehrtens, Andreas Rosenauer, and Sandra Van Aert. Atom-counting in a non-probe corrected STEM (Poster). In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.


  52. M. Schowalter, F. F. Krause, T. Grieb, K. Müller-Caspary, T. Mehrtens, and A. Rosenauer. Effects of instrument imperfections on quantitative scanning transmission electron Microscopy (Poster). In Electron Microscopy and Analysis Group Annual Conference (EMAG 2016), Durham (UK), 2016.


  53. M. Schowalter, F. F. Krause, T. Grieb, K. Müller-Caspary, and T. Mehrtens A. Rosenauer. Effects of instrument imperfections on quantitative scanning transission electron microscopy. In PCSI 2016, Santa Barbara (US), 2016.


  54. Yi Wang, Dan Zhou, Wilfried Sigle, E. Suyolcu, Knut Müller-Caspary, Florian F. Krause, Andreas Rosenauer, and Peter A. van Aken. Precision and application of atom location in HAADF and ABF [Talk in IM05-II]. In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.


  55. Dan Zhou, Knut Müller-Caspary, Wilfried Sigle, Florian F. Krause, Andreas Rosenauer, and Peter van Aken. Sample tilt effects on atom column position determination in ABF-STEM imaging. In Microscopy and Microanalysis Conference M&M 2016, Columbus (Ohio, USA), session A15.1, [Talk 19], July 24-28th 2016.


  56. Karel H W van den Bos, Florian F. Krause, Armand Beche, Johan Verbeeck, Andreas Rosenauer, and Sandra Van Aert. Precise atomic column position measurements using ISTEM (Poster). In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.


  57. Tim Grieb, Daniel Carvalho, Knut Müller-Caspary, Marco Schowalter, Christoph Mahr, Andreas Beyer, Andreas Hyra, T. Ben, F. M. Morales, R. Garcia, Kerstin Volz, B. Daudin, and Andreas Rosenauer. Quantitative nano-beam electron diffraction: Measuring strain and electric fields. In Microscopy Conference MC 2015, Göttingen (D), Session IM 2 [Talk], September 6-11th 2015.


  58. Florian F. Krause, Jan-Philipp Ahl, Darius Tytko, Pyuck-Pa Choi, Ricardo Egoavil, Marco Schowalter, Thorsten Mehrtens, Knut Müller-Caspary, Johan Verbeeck, Dierk Raabe, Joachim Hertkorn, Karl Engl, and Andreas Rosenauer. Homogeneity and Composition of MOVPE-Grown AlInGaN: A Nanostructure Multiprobe Study (Poster). In Proceedings of the Microscopy Conference 2015 (MC 2015), Göttingen (D), September 6-11th 2015.


  59. F F Krause, A Rosenauer, Müller K., M Schowalter, and T Mehrtens. Imaging STEM: A novel method for microscopy of semiconductors at ultra-high spatial resolution and precision (Talk). In Proceedings of Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK), volume Session 4b (Wed, April 1st), 2015.


  60. Florian Fritz Krause, Andreas Rosenauer, Knut Müller-Caspary, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. In Frontiers of Electron Microscopy in Materials Science (FEMMS) 2015, Lake Tahoe (CA/USA), [Invited Talk], September 13-18th 2015.


  61. F. F. Krause, A. Rosenauer, M. Schowalter, K. Müller-Caspary, and T. Mehrtens. ISTEM: A novel incoherent imaging mode for ultra-high resolution beyond the classical information limit (Talk). In Proceedings of the Microscopy Conference 2015 (MC 2015), Göttingen (D), September 6-11th 2015.


  62. Florian F. Krause, M. Schowalter, J.P. Ahl, J. Hertkorn, R. Egoavil, d. Tytko, P. P. Choi, T. Mehrtens, K. Müller-Caspary, D. Raabe, J. Verbeeck, K. Engl, and A. Rosenauer. Homogeneity and composition of MOVPE grown AlInGaN: a multiprobe nanostructure study. In Proceedings of Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK), 2015.


  63. Johannes Ledig, Tilman Schimpke, Gregor Scholz, Florian F. Krause, Andreas Rosenauer, Martin Strassburg, Hergo-Heinrich Wehmann, and Andreas Waag. Comparison of electroluminescence and IV characteristics along a GaN based core-shell LED taken by point contacts inside a CL-SEM (Poster). In Proceedings of the Microscopy Conference 2015 (MC 2015), Göttingen (D), 2015.


  64. Christoph Mahr, Knut Müller, Marco Schowalter, Thorsten Mehrtens, Tim Grieb, Florian F. Krause, Daniel Erben, and Andreas Rosenauer. Analysis and improvement of precision and accuracy of strain measurements by convergent nano-beam electron diffraction (SANBED). In Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK) [Talk], volume Session 3b, Tue, March 31st, 2015.


  65. Christoph Mahr, Knut Müller-Caspary, Tim Grieb, Thorsten Mehrtens, Marco Schowalter, Florian F. Krause, Dennis Zillmann, and Andreas Rosenauer. Theoretical study of precision and accuracy of strain analysis by nano-beam electron diffraction (SANBED). In Microscopy Conference MC 2015, Göttingen (D), session MS 2, [Poster MS2.P023], September 6-11th 2015.


  66. Thorsten Mehrtens, Marco Schowalter, Jakob Borchardt, Max Grimme, Knut Müller-Caspary, Lars Hoffmann, H. Jönen, U. Rossow, A. Hangleiter, and Andreas Rosenauer. Temperature dependence of HAADF intensity: Influence of disorder. In Microscopy Conference MC 2015, Göttingen (D), session IM 2, [Poster IM2.P049], September 6-11th 2015.


  67. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. A quantum mechanical approach to electron picodiffraction reveals atomic electric fields. In Materials Research Society Spring Meeting 2015 (MRS 2015), San Francisco (USA) [Talk], volume Symposium ZZ, Talk 2.02, 2015.


  68. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields. In Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK) [Talk], volume Session 4b (Wed, April 1st), 2015.


  69. M. Müller, S. Metzner, T. Hempel, P. Veit, F. Bertram, F. F. Krause, T. Mehrtens, K. Müller-Caspary, A. Rosenauer, T. Schimpke, M. Strassburg, and J. Christen. Nanoscale Characterization of InGaN/GaN core-shell microrods: Correlation of the optical properties and the composition of the InGaN single quantum well (Talk). In Proceedings of the International Conference on Nitride Semiconductors 2015 (ICNS 11), Peking (CHN), 2015.


  70. Knut Müller, Andreas Oelsner, Andreas Rosenauer, and Pavel Potapov. STEM strain measurement from a stream of diffraction patterns recorded on a pixel-free delay-line detector. In Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK) [Poster], volume Poster Session 2, Poster P 2.5 (Tue, March 31st), 2015.


  71. K. Müller-Caspary, F. F. Krause, A. Béché, M. Schowalter, V. Galioit, S. L[öffler, J. Verbeeck, J. Zweck, P. Schattschneider, and A. Rosenauer. Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields. In Microscopy Conference MC 2015, Göttingen (D), session IM 5, [Talk], September 6-11th 2015.


  72. Knut Müller-Caspary, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Oliver Oppermann, Tim Grieb, Andreas Oelsner, Pavel Potapov, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields. In Frontiers of Electron Microscopy in Materials Science (FEMMS) 2015, Lake Tahoe (CA/USA), [Invited Talk], September 13-18th 2015.


  73. K. Müller-Caspary, Andreas Oelsner, Andreas Rosenauer, and Pavel Potapov. STEM strain measurement from a stream of diffraction patterns recorded on a pixel-free delay-line detector. In Microscopy Conference MC 2015, Göttingen (D), session IM 1, [Poster IM1.P029], September 6-11th 2015.


  74. Andreas Rosenauer, Florian F. Krause, Knut Müller, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. In Materials Research Society Spring Meeting 2015 (MRS 2015), San Francisco (USA) [Talk], volume Symposium ZZ, Talk 2.02, 2015.


  75. A. Rosenauer, K. Müller-Caspary, M. Schowalter, T. Grieb, F. F. Krause, and T. Mehrtens. Analysis of composition and strain in semiconductor nanostructures by quantitative STEM using HAADF intensity, angular multi-range analysis and imaging STEM. In Microscopy Conference MC 2015, Göttingen (D), Session MS 2 [Invited Talk], September 6-11th 2015.


  76. A. Rosenauer, K. Müller-Caspary, M. Schowalter, T. Grieb, F.F. Krause, T. Mehrtens, A. Béché, J. Verbeeck, V. Galioit, J. Zweck, Stefan Löffler, and Peter Schattschneider. Quantitative STEM. In Proceedings of the International Workshop on Advanced and In-situ Microscopies of Functional Nanomaterials and Devices 2015 (IAMNANO 2015) [Invited Talk], Hamburg (D), 2015.


  77. H. Ryll, M. Simson, C. Boothroyd, R. E. Dunin-Borkowski, C. Dwyer, R. Hartmann, M. Huth, s. Ihle, V. Migunov, K. Müller-Caspary, A. Rosenauer, J. Schmidt, H. Soltau, and L. Strüder. The wave-particle duality of electrons demonstrated with sub-pixel resolution by recording off-axis electron holograms on a pnCCD direct detector. In Microscopy Conference MC 2015, Göttingen (D), Session IM 1 [Invited Talk], September 6-11th 2015.


  78. Marco Schowalter, Florian F. Krause, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Effects of Instrument Imperfections on Quantitative Scanning Transmission Electron Microscopy (Poster. In Proceedings of the Microscopy Conference 2015 (MC 2015), Göttingen (D), September 6-11th 2015.


  79. Marco Schowalter, Florian F. Krause, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Investigation of detector characteristics for quantification of HAADF-STEM images (Poster). In Proceedings of Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK), 2015.


  80. M. Schowalter, A. Rosenauer, K. Müller-Caspary, T. Grieb, and T. Mehrtens. Quantitative STEM. In EAgLE workshop on high-resolution transmission electron microscopy - from sample preparation to interpretation, 21.-25. September 2015, Warsaw, Poland (invited talk), 2015.


  81. M. C. Sequeira, M. B. Lourenco, A. Redondo-Cubero, N. Franco, E. Alves, M. Sousa, T. C. Esteves, J. Rodrigues, N. Ben Sedrine, M. J. Soares, A. J. Neves, M. R. Correia, T. Monteiro, P. R. Edwards, K. P. O'Donnell, M. Bockowski, C. Wetzel, D. Carvalho, T. Ben, F.M. Morales, R. Garcia, T. Grieb, A. Rosenauer, P. Kluth, and K. Lorenz. Quantum Well Intermixing in InGaN/GaN Structures. In ICDS 2015, Espoo (FI), 2015.


  82. M. Simson, R. E. Dunin-Borkowski, C. Dwyer, R. Hartmann, M. Huth, S. Ihle, P. Kotula, V. Migunov, K. Müller-Caspary, A. Rosenauer, H. Ryll, J. Schmidt, H. Soltau, L. Strüder, and M. Wollgarten. The pnCCD (S)TEM Camera - A Pixelated, Fast and Direct Detector for TEM and STEM. In PICO conference 2015: Frontiers of aberration-corrected electron microscopy, Kasteel Vaalsbroek (The Netherlands) [Poster], 2015.


  83. Dan Zhou, Knut Müller-Caspary, Wilfried Sigle, Florian F. Krause, Andreas Rosenauer, and Peter van Aken. Effects of small sample tilt on atomic column position determination in ABF-STEM imaging. In Microscopy Conference MC 2015, Göttingen (D), session IM 2, [Poster IM2.P055], September 6-11th 2015.


  84. Josef Zweck, Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Peter Schattschneider, and Andreas Rosenauer. Exploring the space between atoms: Interatomic electric fields imaged by STEM-DPC. In Multinational Congress on Microscopy (MCM) 2015, Eger (Hungary) [Invited talk], 2015.


  85. Jan-Philipp Ahl, Joachim Hertkorn, Anna Nirschl, Michael Benedikt, Bernhard Holländer, Florian F. Krause, Pyuck-Pa Choi, Dierk Raabe, and Andreas Rosenauer. On the possibility to use quaternary AlInGaN for polarization engineering (Talk). In Proceedings of the International Conference on Metalorganic Vapor Phase Epitaxy 2014 (ICMOVPE 17), Lausanne (CH), 2014.


  86. Manuel Dries, Simon Hettler, Björn Gamm, Erich Müller, Wilfried Send, Dagmar Gerthsen, Knut Müller, and Andreas Rosenauer. A Nanocrystalline Hilbert Phase Plate for Phase Contrast Transmission Electron Microscopy. In Microscopy and Microanalysis (M&M) 2014, Hartford (USA) [], 2014.


  87. H. Kauko, T. Grieb, A. M. Munshi, K. Mller, A. Rosenauer, B. O. Fimland, and A. T. J. van Helvoort. The Outward Diffusion of Sb during Nanowire Growth Studied by Quantitative High-Angle Annular Dark Field Scanning Transmission Electron Microscopy. In Nanowires 2014, Eindhoven (NL), volume 20, pages 186--187, 8 2014.


  88. F. F. Krause, Müller K., D. Zillmann, J. Jansen, M. Schowalter, and A. Rosenauer. Comparison of intensity and absolute contrast of simulated and experimental high-resolution transmission electron microscopy images for different multislice simulation methods (Poster). In Proceedings of the 18th International Microscopy Congress (IMC), Prag (CZ), 2014.


  89. M.B. Lourenco, A. Redondo-Cubero, N. Franco, E. Alves, M. Sousa, T.C. Esteves, J. Rodrigues, N. Ben Sedrine, M.J. Soares, A.J. Neves, M.R. Correia, T. Monteiro, P.R. Edwards, K.P. O'Donnell, M. Bockowski, C. Wetzel, D. Carvalho, T. Ben, F.M. Morales, R. Garcia, T. Grieb, A. Rosenauer, and K. Lorenz. High thermal stability of InGaN/GaN quantum wells. In Vacuum conference (2014), Aveiro (PT), 2014.


  90. Christoph Mahr, Knut Müller, Daniel Erben, Marco Schowalter, Josef Zweck, Kerstin Volz, and Andreas Rosenauer. Strain Analysis by Nano-Beam Electron Diffraction (SANBED) in semiconductor nanostructures. In 18th International Microscopy Congress (IMC) [Poster IT-9-P-3029], 2014.


  91. Thorsten Mehrtens, Marco Schowalter, Darius Tytko, Pyuck-Pa Choi, Dierk Raabe, Lars Hoffmann, Holger Jönen, Uwe Rossow, Andreas Hangleiter, and Andreas Rosenauer. Temperature dependence of Z-contrast in InGaN. In 18th International Microscopy Congress (IMC), Prague (Czech Republic) [Poster presentation], 2014.


  92. Knut Müller, Henning Ryll, Ivan Ordavo, Sebastian Ihle, Martin Huth, Martin Simson, Josef Zweck, Kerstin Volz, Heike Soltau, Pavel Potapov, Lothar Strüder, Marco Schowalter, Christoph Mahr, Daniel Erben, and Andreas Rosenauer. Strain Analyisis by Nano-Beam Electron Diffraction using millisecond frames of a direct electron pnCCD detector. In 18th International Microscopy Congress (IMC) [Talk MS-8-O-3268], 2014.


  93. Knut Müller, Henning Ryll, Ivan Ordavo, Sebastian Ihle, Martin Huth, Martin Simson, Josef Zweck, Kerstin Volz, Heike Soltau, Andreas Rosenauer, Pavel Potapov, Marco Schowalter, Lothar Strüder, Christoph Mahr, and Daniel Erben. Strain Analysis from Nano-beam Electron Diffraction Patterns Recorded on Direct Electron Charge-coupled Devices. In Microscience Microscopy Congress, MMC 2014, Manchester (UK), July, 2014 [invited talk PS3.1.4], 2014.


  94. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Lars Hoffmann, Andreas Hangleiter, Pyuck-Pa Choi, and Dierk Raabe. Measurement of the indium concentration in high-indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. In SPIE Photonics West OPTO, San Francisco (USA) [Invited Talk], 2014.


  95. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Moritz Tewes, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Pyuck-Pa Choi, Dierk Raabe, and Pavel Potapov. Measurement of Composition with Quantitative STEM. In EMSI-2014, Delhi (India) [Invited Talk], 2014.


  96. U. Rossow, L. Hoffmann, H. Bremers, R. Buss, F. Ketzer, T. Langer, T. Mehrtens, M. Schowalter, A. Rosenauer, and A. Hangleiter. Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells. In ICMOVPE XVII, Lausanne (Switzerland) [Poster presenation], 2014.


  97. Henning Ryll, Robert Hartmann, Martin Huth, Sebastian Ihle, Knut Müller, Andreas Rosenauer, Julia Schmidt, Martin Simson, Heike Soltau, and Lothar Strüder. New Operation Modes with the PNCCD TEM Camera for Versatile, Direct Electron Imaging in Transmission Electron Microscopy Applications. In Microscience Microscopy Congress, MMC 2014, Manchester (UK), July, 2014 [Poster 1051], 2014.


  98. T. Schimpke, M. Binder, B. Galler, J. Hartmann, A. Waag, F. F. Krause, T. Mehrtens, A. Rosenauer, M. Müller, S. Metzner, P. Veit, F. Bertram, J. Christen, and H-J. Lugauer M. Strassburg1. Control of emission wavelength gradient along the m-plane facet of high aspect-ratio core-shell InGaN/GaN microrod LED structures (Talk). In Proceedings des Arbeitskreistreffens der Deutsche Gesellschaft für Kristallwachstum und Kristallzüchtung e.V. Arbeitskreis Epitaxie von III-V-Halbleitern 2014(AK III-V DGKK 29), Magdeburg (D), 2014.


  99. M. Schowalter, F. Krause, T. Grieb, T. Mehrtens, K. Müller, and A. Rosenauer. Position resolved single electron response of the HAADF-STEM detector and improved method for intensity normalisation. In 18th International Microscopy Congress (IMC) [Talk IT-2-O-3292], 2014.


  100. Marco Schowalter, Thorsten Mehrtens, Jokob Borchard, Max Grimme, Knut Müller, and Andreas Rosenauer. Influence of disorder on the temperature dependence of the HAADF intensity. In EMSI-2014, Delhi (India) [Talk], 2014.


  101. M Simson, R. Hartmann, M. Huth, S. Ihle, K. Müller, A. Rosenauer, H. Ryll, J. Schmidt, H. Soltau, and L. Strüder. New Operation Modes with the direct detecting pnCCD-camera in Transmission Electron Microscopy. In 18th International Microscopy Congress (IMC) [Poster IT-8-P-1696], 2014.


  102. D. Zhou, W. Sigle, K. Müller, A. Rosenauer, C. Zhu, M. Kelsch, Maier J., and P. van Aken. Contrast Investigation of Annular Bright-Field Imaging in Scanning Transmission Electron Microscopy of LiFePO4. In 18th International Microscopy Congress (IMC) [Poster IT-2-P-2042], 2014.


  103. Kristian Frank, Andre Wichmann, Arne Wittstock, Marcus Bäumer, Lutz Mädler, and Andreas Rosenauer. Investigation of a Nanoporous Gold / TiO2 Catalyst by Electron Microscopy and Tomography. In Symposium V - Geometry and Topology of Biomolecular and Functional Nanomaterials, volume 1504 of MRS Proceedings, 1 2013.


  104. Tim Grieb, Knut Müller, Emanuel Cadel, Rafael Fritz, Nils Neugebohrn, Etienne Talbot, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Chemical composition analysis of dilute GaNAs and InGaNAs by high-angle annular dark field STEM. In International Conference on Electron Microscopy and XXIV Annual Meeting of the Electron Microscope Society of India (EMSI) 2013, Kolkata (India) [Talk], 2013.


  105. T. Grieb, K. Müller, E. Cadel, R. Fritz, E. Talbot, M. Schowalter, K. Volz, and A. Rosenauer. Determination of In and N concentration in (InGa)(NAs) quantum wells using HAADF STEM and investigation of annealing effects. In Proceedings of the Microscopy Conference 2013 (MC 2013, Regensburg) Germany [Poster], volume 1: Instrumentation and Methods, pages IM.1.P024, 2013.


  106. T. Grieb, K. Müller, R. Fritz, V. Grillo, M. Schowalter, K. Volz, and A. Rosenauer. Avoiding surface strain field induced artifacts in 2d chemical mapping of dilute GaNAs quantum wells by HAADF STEM. In Proceedings of the Microscopy Conference 2013 (MC 2013, Regensburg) Germany [Poster], volume 1: Instrumentation and Methods, pages IM.1.P008, 2013.


  107. Dominik Heinz, Mohamed Fikry, Timo Aschenbrenner, Marco Schowalter, Tobias Meisch, Manfred Madel, Florian Huber, Matthias Hocker, Ingo Tischer, Thorsten Mehrtens, Knut Müller, Manuel Frey, Julian Jakob, Benjamin Neuschl, Detlef Hommel, Andreas Rosenauer, Klaus Thonke, and Ferdinand Scholz. Ga(In)N micro- and nanostructures for optical gas sensing. In Statusworkshop Kompetenznetz Funktionelle Nanostrukturen [Poster], 2013.


  108. L. Hoffmann, Uwe Rossow, Heiko Bremers, R. Buss, F. Ketzer, T. Langer, T. Mehrtens, M. Schowalter, A Rosenauer, and A. Hangleiter. Indium incorporation into thin and ultrathin InGaN layers with high indium content for long wavelength applications. In 15th European Workshop on Metalorganic Vapour Phase Epitaxy (EWMOVPE XV), 2013.


  109. Florian F. Krause, Knut Müller, Dennis Zillmann, Jacob Jansen, Marco Schowalter, and Andreas Rosenauer. Comparison of intensity and absolute contrast of simulated and experimental high-resolution transmission electron microscopy images for different multislice simulation methods (Poster). In Proceedings of the Microscopy Conference 2013 (MC 2013), Regensburg (D), volume 1: Instrumentation and Methods, pages IM.1.P022, 2013.


  110. Christoph Mahr, Knut Müller-Caspary, Andreas Rosenauer, Marco Schowalter, Daniel Erben, Josef Zweck, and Pavel Potapov. Effect of lens aberrations on strain measurements from Convergent Beam Electron Diffraction patterns. In DPG Frühjahrstagung 2013, Regensburg, March, 2013 [Talk MM2.3], 2013.


  111. Thorsten Mehrtens, Marco Schowalter, Darius Tytko, Pyuck-Pa Choi, Dierk Raabe, Lars Hoffmann, Holger Jönen, Uwe Rossow, Andreas Hangleiter, and Andreas Rosenauer. Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-Contrast. In Microscopy of Semiconducting Materials 2013 (MSM XVIII),Oxford (UK) [Talk], 2013.


  112. Knut Müller, Henning Ryll, Ivan Ordavo, Marco Schowalter, Josef Zweck, Heike Soltau, Sebastian Ihle, Lothar Strüder, Kerstin Volz, Pavel Potapov, and Andreas Rosenauer. STEM strain analysis at sub-nanometre scale using millisecond frames of a direct electron read-out CCD camera. In Microscopy of Semiconducting Materials 2013 (MSM XVIII),Oxford (UK) [Talk], volume G: Scanning Electron and Ion Beam Techniques, 2013.


  113. K. Müller, H. Ryll, I. Ordavo, D. Zillmann, M. Schowalter, J. Zweck, H. Soltau, S. Ihle, L. Strüder, K. Volz, P. Potapov, and A. Rosenauer. Strain Analysis by Nano-Beam Electron Diffraction (SANBED): Present performance and future prospects. In Proceedings of the Microscopy Conference 2013 (MC 2013, Regensburg) Germany [Talk], volume 1: Instrumentation and Methods, pages IM.1.004, 2013.


  114. M. Qi, W. A. O'Brien, C. A. Stephenson, V. Patel, N. Cao, B. J. Thibeault, T. Kosel, M. Schowalter, A. Rosenauer, V. Protasenko, H. Xing, and M. A. Wistey. Stability study of highly tensile strained Ge for optical device appliations. In Conf. Proceeding. 55th electronic material conference (EMC 2013), 2013.


  115. Andreas Rosenauer. Introduction to STEM and the Multislice Method. In Advanced School on Transmission Electron Microscopy (2013) March 4-8 2013, Institute of Physics, Bhubaneswar, India [invited talk], 2013.


  116. Andreas Rosenauer. Simulation of STEM images. In Advanced School on Transmission Electron Microscopy (2013) March 4-8 2013, Institute of Physics, Bhubaneswar, India [invited talk], 2013.


  117. A. Rosenauer, K. Müller, T. Mehrtens, M. Schowalter, A. Würfel, T. Aschenbrenner, C. Kruse, D. Hommel, L. Hoffmann, A. Hangleiter, Pyuck-Pa Choi, and D. Raabe. Quantitative Methods in TEM and STEM. In , 2013.


  118. H. Ryll, K. Müller, S. Ihle, H. Soltau, I. Ordavo, A. Liebel, R. Hartmann, A. Rosenauer, and L. Strüder. A new direct electron imaging camera for transmission electron microscopy based on an ultrafast pnCCD. In Proceedings of the Microscopy Conference 2013 (MC 2013, Regensburg) Germany [poster], volume 1: Instrumentation and Methods, pages IM.1.P029, 2013.


  119. H. Ryll, K. Müller, S. Ihle, H. Soltau, I. Ordavo, A. Liebel, R. Hartmann, A. Rosenauer, and L. Strüder. Results of a pnCCD Based Ultrafast Direct Single Electron Imaging Camera for Transmission Electron Microscopy. In Proceedings of the Microscopy and Microanalysis Conference 2013 (MandM 2013, Indianapolis) USA [Talk], volume A14.04: New Instrumentation at the Limits: Characteristics and Applications, 2013.


  120. Marco Schowalter, Ingo Stoffers, Florian Krause, Thorsten Mehrtens, Knut Müller, Malte Fandrich, Timo Aschenbrenner, Detlef Hommel, and Andreas Rosenauer. Composition determination using HAADF-STEM in AlGaN/GaN heterostructures revisited. In Microscopy Conference 2013 (MC 2013, Regensburg) [Poster Presentation], volume 1: Instrumentation and Methods, pages IM.1.P028, 2013.


  121. Ingo Stoffers, Marco Schowalter, Florian Krause, Thorsten Mehrtens, Knut Müller, Malte Fandrich, Timo Aschenbrenner, Detlef Hommel, and Andreas Rosenauer. Composition quantification from HAADF-STEM in AlGaN/GaN heterostructures revisited. In Microscopy of Semiconducting Materials 2013 (MSMX VIII),Oxford (UK) [Poster Presentation], 2013.


  122. Moritz Tewes, Florian Krause, Knut Müller, Pavel Potapov, Marco Schowalter, Thorsten Mehrtens, and Andreas Rosenauer. Quantitative Composition Evaluation from HAADF-STEM in GeSi/Si Heterostructures. In Microscopy of Semiconducting Materials 2013 (MSM XVIII),Oxford (UK) [Talk], 2013.


  123. Timo Aschenbrenner, Heiko Dartsch, Elahe Zakizadeh, Carsten Laurus, Stephan Figge, Alexander Würfel, Thorsten Mehrtens, Andreas Rosenauer, and Detlef Hommel. Enhanced Carrier Confinement in InGaN Quantums Dots by Al(In,Ga)N Barrier Layers. In ICMOVPE - XVI Busan, (Korea) [Talk], 2012.


  124. Stephanie Bley, Thorsten Mehrtens, Parlapalli Venkata Satyam, and Andreas Rosenauer. Optimierung der Präparation von GaN-basierten Proben mittels Niedrigenergie-Ionendünnung für (S)TEM. In DPG Frühjahrstagung, Berlin (Germany) [Talk], number HL 64.7, pages 240, 2012.


  125. Malte Fandrich, Timo Aschenbrenner, Stephan Figge, Thorsten Mehrtens, Andreas Rosenauer, and Detlef Hommel. AlInN/GaN-heterostructures for sensing applications. In Verhandlungen der DPG, number HL 73.1, pages 245, 2012.


  126. Malte Fandrich, Timo Aschenbrenner, Thorsten Klein, Stephan Figge, Carsten Kruse, Thorsten Mehrtens, Andreas Rosenauer, and Detlef Hommel. Nitride Based Heterostructures with Ga- and N-Polarity for Sensing Applications. In ICMOVPE - XVI [Talk], 2012.


  127. S. Figge, T. Aschenbrenner, K. Morosov, E. Zakizadeh, C. Kruse, A Rosenauer, T. Mehrtens, S. Kremling, S. Höfling, L. Worschech, L. Forchel, and D. Hommel. Enhanced carrier confinement in InGaN quantum dots. In International Workshop on Nitride Semiconductors 2012 [Talk], 2012.


  128. T. M. Gesing, M. Schowalter, C. Weidenthaler, M. M. Murshed, A. Rosenauer, J.C. Buhl, H. Schneider, and R. X. Schneider. Mullite-type dibismuth nonaoxometallates-(III): the effect of Strontium doping. In European crystallographic meeting, July 29 - September 11, 2012 Bergen, Norway, 2012.


  129. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A method to avoid strain field induced artifacts in 2D chemical mapping of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis [Talk 595], volume 18, pages 1028--1029, 2012.


  130. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A new method for true 2d chemical mapping: strain-field unaffected evaluation of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis (M&M) conference 2012, Phoenix (USA) [Poster], 2012.


  131. Tim Grieb, Knut Müller, Andreas Hyra, Rafael Fritz, Marco Schowalter, Nicolai Knaub, and Andreas Rosenauer. Chemical analysis of InGaNAs quantum wells using HAADF STEM. In EMC 2012 [Poster], Session PS1.2: Thin films, Coatings and Interface, Manchester (UK), 2012.


  132. Lars Hoffmann, Heiko Bremers, Holger Jönen, Uwe Rossow, Thorsten Mehrtens, Marco Schowalter, Andreas Rosenauer, and Andreas Hangleiter. STEM and XRD investigations of ultra thin GaInN/GaN quantum wells with high indium content. In Verhandlungen der DPG, number HL 64.6, pages 240, 2012.


  133. L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, T. Mehrtens, M. Schowalter, A. Rosenauer, and A. Hangleiter. STEM and XRD investigations of ultra-thin GaInN/GaN quantum wells with high indium content. In International Workshop on Nitride Semiconductors 2012 [Talk], 2012.


  134. H. Kauko, T. Grieb, A. Rosenauer, and A. T. J. van Helvoort. Studying Sb distribution in heterostructured GaAs/GaAsSb nanowires with quantitative HAADF-STEM. In EMC 2012, Manchester (UK), 2012.


  135. T. Mehrtens, M. Schowalter, D. Tytko, P.-P. Choi, D. Raabe, L. Hoffmann, A. Hangleiter, and A. Rosenauer. Temperature dependence of Z-Contrast for InGaN. In Microscopy & Microanalysis, Phoenix (USA) [Talk], 2012.


  136. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain analysis by nano-beam electron diffraction (SANBED) in semiconductor nanostructures [Invited talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, pages 36, 2012. Keyword(s): SANBED.


  137. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor nanostructures by convergent electron nanoprobe diffraction [Talk]. In Verhandlungen der Deutschen Physikalischen Gesellschaft, volume 47, pages 312, 2012.


  138. A. Rosenauer, K. Mller, T. Mehrtens, M. Schowalter, A. Würfel, T. Aschenbrenner, C. Kruse, D. Hommel, L. Hoffmann, A. Hangleiter, P.-P. Choi, and D. Raabe. Measurement of composition in InGaN nanostructures using scanning transmission electron microscopy. In International Workshop on Nitride Semiconductors 2012, Sapporo (Japan) [Invited Talk], 2012.


  139. A. Rosenauer, K. Müller, T. Mehrtens, M. Schowalter, T. Aschenbrenner, C. Kruse, D. Hommel, K. Sebald, and J. Gutowski. TEM investigation of InGaN quantum dots. In First German-Korean Symposium on Nano-optics and Nano-technology, Hanse-Wissenschaftskolleg, Delmenhorst, (Germany) December 14, 2012, [Invited talk], 2012.


  140. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Rafael Fritz, and Kerstin Volz. Measurement of Composition and Strain by Scanning Transmission Electron Microscopy. In Microscopy and Microanalysis, Phoenix (USA) [Invited talk], 2012.


  141. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Alexander Würfel, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Lars Hoffmann, Andreas Hangleiter, S. A. Gerstl, Pyuck-Pa Choi, and Dirk Raabe. Measurement of composition and strain in InGaN quantum dots by STEM [Plenary talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, EMSI2012, Bengaluru (Indien), July 4, 2012 [invited talk], pages 25, 2012.


  142. A. Rosenauer, K. Müller, T. Mehrtens, M. Schowalter, J. Zweck, R. Fritz, and K. Volz. Measurement of Composition and Strain by STEM. In International Conference on Extended Defects in Semiconductors, EDS 2012, Thessaloniki (Greece) [Invited Talk], 2012.


  143. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Measurement of composition and strain by STEM. In Microscopy and Microanalysis 2012 (M&M2012), Phoenix, Arizona, July 29-August 2 [Invited talk], volume 18, pages 1804--1805, 2012.


  144. Uwe Rossow, Andreas Kruse, Holger Jönen, Lars Hoffmann, Fedor Ketzer, Torsten Langer, Ronald Buss, Heiko Bremers, Andreas Hangleiter, Thorsten Mehrtens, Marco Schowalter, and Andreas Rosenauer. Optimizing the Growth Process of the Active Zone in GaN Based Laser Structures for the Long Wavelength Region. In ICMOVPE - XVI [Talk], 2012.


  145. Alexander Würfel, Thorsten Mehrtens, Christian Tessarek, Timo Aschenbrenner, Detlef Hommel, and Andreas Rosenauer. Untersuchung von InGaN-basierten Quantenpunktsystemen mittels STEM Z-Kontrast. In Verhandlungen der DPG, number HL 25.15, pages 223, 2012.


  146. Heiko Dartsch, Christian Tessarek, Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. Electroluminescence from InGaN quantum dots in a monolithically grown GaN/AlInN cavity. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.


  147. S. Figge, H. Dartsch, C. Tessarek, T. Aschenbrenner, C. Kruse, D. Hommel, K. Sebald, M. Seyfried, J. Kalden, J. Gutowski, M. Schowalter, K. Müller, A. Rosenauer, M. Florian, and F. Jahnke. Enhancing the Collection-Efficiency of InGaN Quantum Dots in Single Photon Emitters. In poster PC1.17 ICNS 9 Glasgow, U.K. 2011, [Poster], volume PC1.17, 2011.


  148. K. Frank, A. Rosenauer, A. Wittstock, B. Neumann, and M. Bäumer. STEM - tomography of nanoporous gold. In poster IM3.P144 MC 2011, Kiel, Germany [poster], 2011.


  149. R. Fritz, A. Beyer, W. Stolz, O. Rubel, T. Grieb, K. Müller, M. Schowalter, A. Rosenauer, I. Häusler, A. Mogilatenko, H. Kirmse, W. Neumann, and K. Volz. HAADF-STEM in a JEOL 2200FS for quantitative analysis of composition in compound III/V semiconductor materials. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel), volume 1: Instrumentation and Methods, pages IM2.P130, 2011. DGE - German Society for Electron Microscopy.


  150. Rafael Fritz, Andreas Beyer, Wolfgang Stolz, Kerstin Volz, Knut Müller, Marco Schowalter, Andreas Rosenauer, Ines Häusler, Anna Mogilatenko, Holm Kirmse, and Wolfgang Neumann. Quantitative analysis of chemical composition using HAADF -STEM in a JEOL 2200FS. In Microscopy of semiconducting materials, Cambridge (UK) [Talk], 2011.


  151. T. M. Gesing, M. Schowalter, C. Weidenthaler, M. M. Murshed, A. Rosenauer, J.C. Buhl, H. Schneider, and R. X. Schneider. Strontium incorporation in Mullite-type Bi2M4O8. In Presented at IUCR conference in Madrid, 2011.


  152. T. Grieb, K. Müller, O. Rubel, R. Fritz, C. Gloistein, N. Neugebohrn, M. Schowalter, K. Volz, and A. Rosenauer. Determination of Nitrogen concentration in dilute GaNAs by STEM HAADF Z-contrast imaging. In MSM 2011 Cambridge, U.K. [talk] talk D13, 2011.


  153. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of nitrogen concentration in dilute GaNAs by STEM HAADF Z-contrast imaging. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.


  154. T. Grieb, K. Müller, O. Rubel, R. Fritz, M. Schowalter, K. Volz, and A. Rosenauer. STEM strain state analysis in combination with HAADF intensity evaluation to determine chemical composition of GaNAs quantum wells. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel), volume 1: Instrumentation and Methods, pages IM2.P120, 2011. DGE - German Society for Electron Microscopy.


  155. V. Grillo, K. Müller, C. Frigeri, K. Volz, F. Glas, and A. Rosenauer. Strain, composition and disorder in ADF imaging of semiconductors. In MSM 2011 Cambridge, U.K. [talk] talk D10, 2011.


  156. L. Hoffmann, H. Bremer, H. Jönen, U. Rossow, J. Thalmair, J. Zweck, M. Schowalter, A. Rosenauer, and A. Hangleiter. Strain Relaxation Mechanisms in Green Emitting GaInN/GaN Laser Diode Structures. In ICNS 9 Glasgow, U.K., 2011 [talk] talk B4.3, 2011.


  157. Lars Hoffmann, Heiko Bremers, Holger Joenen, Uwe Rossow, Johannes Thalmair, Josef Zweck, Marco Schowalter, Andreas Rosenauer, and Andreas Hangleiter. Strain Relaxation Mechanisms in Green Emitting GaInN/GaN Laser Diode Structures. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.


  158. Robert Imlau, Knut Müller, Marco Schowalter, Rafael Fritz, Kerstin Volz, and Andreas Rosenauer. Untersuchung struktureller und optischer Eigenschaften von getemperten InGaNAs-Trögen mittels TEM-Dreistrahlabbildung. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.


  159. R. Imlau, K. Müller, M. Schowalter, O. Rubel, R. Fritz, K. Volz, and A. Rosenauer. Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing. In MSM 2011 Cambridge, U. K. [poster] poster 2.16, 2011.


  160. H. Kauko, T. Grieb, A. Rosenauer, R. Bjørge, M. Munshi, H. Weman, and A. T. J. van Helvoort. Composition analysis of heterostructured GaAs nanowires with quantitative HAADF-STEM. In Nanolab Meeting 2011, Trondheim (NO),, 2011.


  161. G.T. Martinez, S. Van Aert, J. Verbeeck, S. Bals, and A. Rosenauer. Quantitative interface characterization using model-based HAADF STEM. In poster IM2.P116 MC 2011, Kiel, Germany [poster], 2011.


  162. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S. A. Gerstl, Pyuck-Pa Choi, Dierk Raabe, Adrian Avramescu, and Andreas Rosenauer. A (S)TEM and Atom Probe Tomography Study of InGaN. In DPG Frühjahrstagung, Dresden (Germany) [Talk], number 62.3, 2011.


  163. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S. A. Gerstl, Pyuck-Pa Choi, Dierk Raabe, Adrian Avramescu, and Andreas Rosenauer. A (S)TEM and atom probe tomography study for InGaN. In MSM 2011 Cambridge, U.K. [talk] talk D7, 2011.


  164. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S. A. Gerstl, Pyuck-Pa Choi, Dierk Raabe, Adrian Avramescu, and Andreas Rosenauer. Determination of composition in InGaN/GaN heterostructures using (S)TEM, Atom Probe Tomography and Photoluminescence. In E-MRS Spring Meeting 2011, Nice (France) [Talk], 2011.


  165. K. Müller, T. Grieb, O. Rubel, M. Schowalter, R. Fritz, D. Z. Hu, D. Schaadt, M. Hetterich, K. Volz, and A. Rosenauer. Conventional and Scanning TEM of InGaNAs: Comparison of theory and experiment. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel) Germany [poster] Best poster award, volume 1: Instrumentation and Methods, pages IM2.P132, 2011. DGE - German Society for Electron Microscopy.


  166. Knut Müller, Marco Schowalter, Andreas Rosenauer, Dongzhi M. Hu, Daniel Schaadt, Michael Hetterich, Philippe Gilet, Oleg Rubel, Rafael Fritz, and Kerstin Volz. Annealing in InGaNAs studied by TEM three-beam imaging. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.


  167. K. Müller, M. Schowalter, O. Rubel, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, R. Fritz, K. Volz, and A. Rosenauer. TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells. In MSM 2011 Cambridge, U. K. [Talk] talk B4, 2011.


  168. Andreas Rosenauer. Composition mapping in InGaN with Quantitative STEM and comparison with atom probe measurements. In Invitied talk B2.1 ICNS 9 Glasgow, U.K. 2011 [invited talk], 2011.


  169. A Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, S. Bley, P. V. Satyam, A. Avramescu, K. Engl, and S. Lutgen. 2D-composition mapping in InGaN without electron beam induced clustering of indium by STEM HAADF Z-contrast imaging. In MSM 2011 Cambridge, U.K. [poster] poster 2.18, 2011.


  170. A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, S. Bley, P. V. Satyam, A. Avramescu, K. Engl, and S. Lutgen. Composition mapping in InGaN using HAADF STEM imaging. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel), volume 1: Instrumentation and Methods, pages IM2.P113, 2011. DGE - German Society for Electron Microscopy.


  171. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Stephanie Bley, Parlapalli Vencata Satyam, Christian Tessarek, Detlef Hommel, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Quantitative STEM: Composition mapping in InGaN. In DPG Frühjahrstagung, Dresden (Germany) [Invited talk], 2011.


  172. A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, P. V. Satyam, S. Bley, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, J. Gutowski, S. S. A. Gerstl, P. P. Choi, and D. Raabe. Composition mapping in InGaN with quantitative STEM Z-contrast imaging. In ICNS Glasgow 2011 [Invited talk], 2011.


  173. A. Rosenauer, K. Müller, and M. Schowalter. STEMSIM-a software tool for simulation of STEM ADF Z-contrast imaging. In invited talk in the Workshop W4 Simulation for TEM and STEM MC 2011, Kiel, Germany [invited talk], 2011.


  174. P.V. Satyam, J. K. Dash, A. Rath, R. R. Juluri, P. Santhana Raman, K. Müller, M. Schowalter, R. Imlau, and A. Rosenauer. Shape transformation of SiGe structures on ultra clean Si (5 5 7) and Si(5 5 12) surfaces. In MSM 2011 Cambridge, U.K. [poster] poster P2.2, volume P2.2, 2011.


  175. P. V. Satyam, A. Rosenauer, J. Dash, A. Rath, J. Raghava, M. Schowalter, Tim Grieb, K. M�ller, T. Mehrtens, and Robert Imlau. Compositional analysis of nanostructures with STEM Z-contrast imaging. In EM50, Hyderabad (India) [Talk], 2011.


  176. M. Schowalter, J. Fischer, A. Rosenauer, and R.E. Dunin-Borkowski. A theoretical assessment of the reported increase in the mean inner potential of Au clusters with decreasing particle size. In poster IM2.P129 MC 2011, Kiel, Germany [poster], 2011.


  177. M. Schowalter, K. Müller, and A. Rosenauer. Density Functional Theory simulations for quantitative transmission electron microscopy. In CECAM-HQ-EPFL workshop 2011, Lausanne, Switzerland [invited talk], 2011.


  178. M. Schowalter, M. Tewes, K. Frank, R. Imlau, A. Rosenauer, H.S. Lee, O.G. Rastelli, M. Schmidt, M. Tavast, T. Leinonen, and M. Guina. Investigation of diffusion in AlAs/GaAs distributed Bragg reflectors using HAADF STEM imaging. In MSM 2011 Cambridge, U.K. [poster] poster P2.12, 2011.


  179. W. Van den Broek, S. Van Aert, A. Rosenauer, and D. Van Dyck. Atomic resolution tomographic reconstruction algorithm for particles of nanometer size. In poster IM3.P146 MC 2011, Kiel [poster], 2011.


  180. T. Volkenandt, E. Müller, T. Mehrtens, A. Rosenauer, and D. Gerthsen. Quantitative analysis of InGaN thin layers by scanning transmission electron microscopy at low electron energies. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel, Germany) [poster], volume 1: Instrumentation and Methods, pages IM2.P114, 2011.


  181. K. Volz, R. Fritz, A. Beyer, W. Stolz, K. Müller, M. Schowalter, A. Rosenauer, I. Haeusler, A. Mogilatenko, H. Kirmse, and W. Neumann. Quantitative analysis of chemical composition using HAADF-STEM in a JEOL 2200FS. In talk D11 MSM 2011 Cambridge, U.K. [talk], 2011.


  182. T. Aschenbrenner, G. Kunert, W. Freund, S. Figge, C. Kruse, M. Schowalter, C. Vogt, A. Rosenauer, J. Kalden, K. Sebald, J. Gutowski, and D Hommel. High quality GaN nanorods: from catalyst free growth to an LED. In presented at IWN 2010, 2010.


  183. Stephanie Bley, Thorsten Mehrtens, and Andreas Rosenauer. Präparation von GaN-basierten Proben mittels Niedrigenergie-Ionendünnung für Transmissionselektronenmikroskopie. In DPG Frühjahrstagung, Regensburg, number HL 34.33, 2010.


  184. M. Dries, B. Gamm, K. Schultheiss, A. Rosenauer, R.R. Schröder, and D. Gerthsen. Object-wave Reconstruction by Carbon-Film-Based Zernike- and Hilbert-Phase Plate Microscopy: A Theoretical Study Not Restricted to Weak Phase Objects. In Microscopy and Microanalysis 2010, 2010.


  185. S. Figge and A. Rosenauer. The guideways for InGaN quantum dot formation - Stranski-Krastanov and spinodal decomposition (2010):. In IWN2010 - 19-24 September , Tampa, Florida, USA, 2010.


  186. M. Florian, F. Jahnke, A. Pretorius, A. Rosenauer, H. Dartsch, C. Kruse, and D. Hommel. Influence of growth imperfections on optical properties of nitride pillar VCSEL microcavities. In DPG Frühjahrstagung, Regensburg (Germany), 2010.


  187. Kristian Frank, Marco Schowalter, Andreas Rosenauer, Wojciech Pacuski, Carsten Kruse, and Detlef Hommel. Quantitative Untersuchung von ZnTe-basierten optoelektronischen Heterostrukturen mittels Transmissionselektronenmikroskopie. In DPG Frühjahrstagung in Regensburg, 2010.


  188. Rafael Fritz, Andreas Beyer, Oleg Rubel, Wolfgang Stolz, Kerstin Volz, Knut Müller, Marco Schowalter, Andreas Rosenauer, Ines Häusler, Anna Mogilatenko, Holm Kirmse, and Wolfgang Neumann. Quantitative analysis of chemical composition in Ga(AsP)-heterostructures using HAADF-STEM in a JEOL 2200FS. In International Microscopy Congress (IMC17) Rio de Janeiro (Brazil) [Poster presentation], 2010.


  189. D. Gerthsen, H. Blank, D Litvinov, R. Schneider, A. Rosenauer, T. Passow, A. Grau, P. Feinäugle, H. Kalt, C. Klingshirn, and M. Hetterich. On the incorporation of indium in InAs-based quantum structures. In Journal of Physics: Conference Series 209, 012006, 2010.


  190. T. M. Gesing, M. Schowalter, C. Weidenthaler, A. Rosenauer, H. Schneider, and R.X. Fischer. Synthesis and properties of Mullite-type Bi(1-x)Sr(x)2M1 4OM2 9-x/2 (M=Al, Ga,Fe). In presented at BMEA, Taiwan (2010), 2010.


  191. Claas Gloistein, Knut Müller, Marco Schowalter, Andreas Rosenauer, and Jacob Jansen. Computation and measurement of atomic mean square displacements for quantitative evaluation of high angle annular dark field images. In International Conference on Advances in Electron Microscopy and Related Techniques/XXXI Annual Meeting of EMSI, Mumbai (India) [Invited talk], 2010.


  192. K Gries, F. Heinemann, A. Ziegler, A. Rosenauer, and M. Fritz. The influence of the insoluble and soluble matrix on the growth of calcium carbonate crystals. In Gordons Research Conference, Biomineralization, New London (NH, USA), 2010 [poster], 2010.


  193. Katharina Gries, Malte Launspach, Meike Gummich, Tanja Dodenhof, Andreas Rosenauer, and Monika Fritz. New functional ceramic composits through biomineralisation?. In DPG Frühjahrstagung, Regensburg (Germany), 2010.


  194. Vincenzo Grillo, Frank Glas, Knut Müller, and Andreas Rosenauer. Simulation of STEM-HAADF microscopy images for the chemical quantification in InGaAsN alloys. In Transnational Access Meeting (TAM), Helsinki (Finland) [Poster presentation], 2010.


  195. C. Kruse, W. Pacuski, T. Jakubczyk, M. Florian, K. Frank, T. Kazimierczuk, A. Golnik, J. A. Gaj, F. Jahnke, A. Rosenauer, and D. Hommel. High-quality ZnTe-based micropillars containing CdTe quantum dots. In ICPS 2010, 2010.


  196. Thorsten Mehrtens, Marco Schowalter, Knut Müller, Dongzhi Hu, Daniel M. Schaadt, and Andreas Rosenauer. Measuring of segregation profiles from HAADF -STEM images. In International Microscopy Congress (IMC17), Rio de Janeiro (Brazil) [Poster presentation], 2010.


  197. K. Müller, M. Schowalter, A. Rosenauer, J. Jansen, K. Tsuda, J. Titantah, and D. Lamoen. Refinement of chemically sensitive structure factors using parallel and convergent beam electron nanodiffraction. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012025, 2010.


  198. Knut Müller, Marco Schowalter, Oleg Rubel, Kerstin Volz, Michael Hetterich, Dongzhi Hu, Daniel Schaadt, and Andreas Rosenauer. Dual compositional mapping in InGaNAs using a single TEM lattice fringe image. In International Microscopy Congress (IMC17), Rio de Janeiro (Brazil) [Poster presentation], 2010.


  199. S. Pokhrel, K. Grossmann, J. Birkenstock, J.I. Flege, J. Falta, M. Schowalter, A. Rosenauer, N. Barsan, U. Weimar, and L. Mädler. Aerosol made Sn doped In2O3 (ITO) nanoparticles for gas sensing application. In presented at IAC conference (2010), 2010.


  200. A. Rosenauer, K. Gries, K. Müller, M. Schowalter, A. Pretorius, A. Avramescu, K. Engl, and S. Lütgen. Measurement of Composition Profiles in III-Nitrides by Quantitative Scanning Transmission Electron Microscopy. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012009, 2010.


  201. Andreas Rosenauer, Thorsten Mehrtens, Stephanie Bley, Knut Müller, Katharina Gries, Marco Schowalter, Christian Tessarek, Detlef Hommel, Kathrin Sebald, Moritz Seyfried, and Jürgen Gutowski. Composition mapping in InGaN quantum wells and quantum dots using high resolution STEM imaging. In International Microscopy Congress (IMC17), Rio de Janeiro (Brazil) [Poster presentation], 2010.


  202. Andreas Rosenauer, Knut Müller, Katharina Gries, Marco Schowalter, Angelika Pretorius, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Towards Quantitative Scanning Transmission Electron Microscopy: Measurement of Composition in III Nitrides. In International Conference on Advances in Electron Microscopy and Related Techniques/XXXI Annual Meeting of EMSI, Mumbai (India) [Invited talk], 2010.


  203. M. Schowalter, T. Aschenbrenner, C. Kruse, D. Hommel, and A. Rosenauer. TEM characterization of catalyst- and mask-free grown GaN nanorods. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012020, 2010.


  204. Marco Schowalter, Thorsten Mehrtens, and Andreas Rosenauer. The effect of strain on mean square displacement in wurtzite InGaN. In International Microscopy Congress (IMC17), Rio de Janeiro (Brazil) [Poster presentation], 2010.


  205. Moritz Speckmann, Thomas Schmidt, Jan Ingo Flege, Inga Heidmann, Andre Kubelka, Locatelli A., T. O. Mentes, M. A. Nino, Knut Müller, Andreas Rosenauer, and Jens Falta. Facets, mazes, slabs, and nanowires: silver-mediated germanium growth on silicon surfaces. In 37th International conference on Vacuum Ultraviolet and X-ray Physics (VUVX), Vancouver (Canada) [Talk], 2010.


  206. J. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Ab initio based atomic scattering amplitudes and 002 electron structure factor of GaInAs/GaAs quantum wells. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012040, 2010.


  207. Timo Aschenbrenner, Gerd Kunert, Carsten Kruse, Stephan Figge, Joachim Kalden, Kathrin Sebald, Knut Müller, Marco Schowalter, Jürgen Gutowski, Andreas Rosenauer, and Detlef Hommel. Catalyst- and mask-free grown GaN nanocolumns. In E-MRS Fall Meeting 2009, Warsaw (Poland) [Invited talk], 2009.


  208. B. Butz, R. Schneider, D. Gerthsen, M. Schowalter, and A. Rosenauer. Chemical instability as reason for degradation of ionic conductivity in 8.5 mol% Y03-doped ZrO. In W. Grogger, F. Hofer, and P. Pölt, editors, MC2009, Graz (Austria) Vol. 3: Materials science, pages 201--302, 2009.


  209. M. Dries, B. Gamm, K. Schultheiss, A. Rosenauer, R.R. Schröder, and D. Gerthsen. Object wave reconstruction by carbon-film-based Zernike- and Hilbert-phase plates. In MC2009 Graz (Austria), 2009.


  210. B. Gamm, M. Dries, K. Schultheiss, H. Blank, A. Rosenauer, R.R. Schr�er, and D. Gerthsen. Object wave reconstruction by phase plate transmission electron microscopy. In MC2009 Graz (Austria), 2009.


  211. K. Gries, M. Fritz, and A. Rosenauer. Detection of calcium ions in the mantle epithelium of the abalone Haliotis laevigata. In MC2009 Graz (Austria) Vol.2: Life Sciences, pp297 - 298, 2009, 2009.


  212. Thorsten Mehrtens, Knut Müller, Marco Schowalter, Nils Neugebohrn, Andreas Rosenauer, Dongzhi Hu, and Daniel Schaadt. Towards a quantitative concentration analysis in InGaAs-heterostructures using HAADF-STEM. In G. Kothleitner and M. Leisch, editors, MC2009, Graz (Austria) Vol. 1: Instrumentation and Methodology, pages 219--220, 2009.


  213. Thorsten Mehrtens, Marco Schowalter, Knut Müller, Andreas Rosenauer, Dongzhi Hu, and Daniel Schaadt. Analysis of segregation profiles in InGaAs quantum wells via TEM and STEM. In Verhandlungen der DPG, number HL 1.6, 2009.


  214. Knut Müller, Marco Schowalter, Andreas Rosenauer, Jacob Jansen, Kenji Tsuda, John Titantah, and Dirk Lamoen. Measurement of structure factors by parallel and convergent beam electron nanodiffraction. In G. Kothleitner and M. Leisch, editors, MC2009, Vol. 1: Instrumentation and Methodology [Poster], pages 293--294, 2009.


  215. Knut Müller, Marco Schowalter, Andreas Rosenauer, Wolfgang Stolz, and Kerstin Volz. Simultaneous measurement of In and N concentration maps and profiles in InGaNAs from a single TEM lattice fringe image. In W. Grogger, F. Hofer, and P. Pölt, editors, MC2009, Graz (Austria) Vol. 3: Materials science, pages 45--46, 2009.


  216. S. Pokhrel, M. Schowalter, A. Rosenauer, and L. Mädler. New precursors leading to single crystalline WO3 nanospheres. In presented at AICHE annual meeting (2009), 2009.


  217. A. Rosenauer, M. Schowalter, A. Pretorius, A. Avramescu, K. Engl, and S. Lutgen. Quantitative measurement of composition profiles at interfaces in semiconductor nanostructures by HRSTEM. In PSI2009, Puri, India, February 2009, 2009.


  218. Marco Schowalter, Thorsten Mehrtens, Kristian Frank, Knut Müller, and Andreas Rosenauer. Analysis of semiconductor interfaces and surface segregation using the composition evaluation by lattice fringe analyis (CELFA) method. In Physics at surfaces and Interfaces (PSI), Puri (India) [Talk], 2009.


  219. V. Srivastava, K.B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, J. Eckert, A. Rosenauer, and H.-W. Zoch. Novel microstructural characteristics and properties of spray formed Al-RE-TM based alloys. In Proceedings of the 4th International conference on spray deposition and melt atomization SDMA2009 and 7th international conference on spray forming ICSF7 held at University of Bremen during September 07-09, 2009, 2009.


  220. John T. Titantah, Dirk Lamoen, Marco Schowalter, Andreas Rosenauer, and Knut Müller. Ab initio based atomic scattering amplitudes and 002 electron structure factor of GaInAsN / GaAs quantum wells. In 32nd International Symposium on Dynamical Properties of Solids, Antwerp (Belgium) [Poster presentation], September 2009.


  221. T. Aschenbrenner, S. Figge, D. Hommel, M. Schowalter, and A. Rosenauer. MOVPE-growth of a-plane InGaN quantum wells on GaN buffer layers on r-plane sapphire substrates. In IC-MOVPE, 1.-6. June 2008, 2008.


  222. H. Dartsch, S. Figge, T. Aschenbrenner, A. Pretorius, A. Rosenauer, and D. Hommel. Strain compensated AlGaN/GaN-Bragg-reflectors with high Al content grown by MOVPE. In IC-MOVPE, 1.-6. June 2008, 2008.


  223. P. Galindo, J. Pizarro, A. Rosenauer, A. Yanez, E. Guerrero, and S. Molina. HAADF-STEM image simulation of large scale nanostructures. In M. Luysberg, K. Tillmann, T. Weirich (Eds.): EMC 2008, Instrumentation and Methods, volume 1, pages 111--112, 2008.


  224. K. Gries, R. Kröger, C. Kuebel, M. Fritz, and A. Rosenauer. Electron microscopic investigations of the polymer/mineral composite material nacre. In S. Richter, A. Schwedt (Eds.): EMC 2008, Vol. 2: Materials Science, pp. 733-734, DOI: 10.1007/978-3-540-85226-1_367, 2008.


  225. Katharina Gries, Roland Kröger, Christian Kuebel, Monika Fritz, and Andreas Rosenauer. Elektronenmikroskopische Untersuchung des Polymer-Mineral-Verbundmaterials Perlmutt. In DPG Frühjahrstagung, Berlin (Germany), 2008.


  226. Knut Müller, Marco Schowalter, Andreas Rosenauer, Jacob Jansen, John Titantah, and Dirk Lamoen. Measurement of 002 structure factors for GaAs from electron spot diffraction patterns. In Verhandlungen der DPG [Talk], number HL 33.2, pages 376, 2008.


  227. Knut Müller, Marco Schowalter, Andreas Rosenauer, Dirk Lamoen, John Titantah, Jacob Jansen, and Kenji Tsuda. Measurement of GaAs structure factors from the diffraction of parallel and convergent electron nanoprobes. In M. Luysberg, K. Tillmann, and T. Weirich, editors, EMC 2008, Vol. 1: Instrumentation and methods [Poster], pages 215--216, 2008.


  228. Knut Müller, Marco Schowalter, Andreas Rosenauer, John Titantah, Dirk Lamoen, Jacob Jansen, and Kenji Tsuda. Measurement of 002 structure factors for GaAs using parallel and convergent beam electron diffraction. In Meeting of the Arbeitskreises Hochauflösende Elektronenmikroskopie der Deutschen Gesellschaft für Elektronenmikroskopie, Bremen [Vortrag (Talk)], 2008.


  229. A. Pretorius, T. Aschenbrenner, H. Dartsch, S. Figge, D. Hommel, and A. Rosenauer. Transmission electron microscopical investigation of AlGaN/GaN distributed Bragg reflectors. In IWN 2008, 6-10 Oktober, Montreaux, Schweiz Physica Status Solidi C 6, S680-S683, 2008.


  230. A. Pretorius, A. Rosenauer, T. Aschenbrenner, H. Dartsch, S. Figge, and D. Hommel. TEM analyses of microstructure and composition of Al(x)Ga(1-x)N/GaN distributed Bragg reflectors. In S. Richter, A. Schwedt (Eds.): EMC 2008, Vol. 2: Materials Science, pp. 81-82, DOI: 10.1007/978-3-540-85226-1_41, 2008.


  231. A. Rosenauer, M. Schowalter, J. Titantah, and D. Lamoen. A novel emission potential multislice method to calculate intensity contributions for thermal diffuse scattering in plane wave illumination TEM. In M. Luysberg, K. Tillmann, T. Weirich (Eds.): EMC 2008, Vol. 1: Instrumentation and Methods, pp. 147-148, DOI: 10.1007/978-3-540-85156-1_74, 2008.


  232. M. Schowalter, A. Rosenauer, J. Titantah, and D. Lamoen. Computation and parametrization of Debye-Waller temperature factors for sphalerite type II-VI, III-V and group IV semiconductors. In M. Luysberg, K. Tillmann, T. Weirich (Eds.): EMC 2008, Vol. 1: Instrumentation and Methods, pp. 153-154, DOI: 10.1007/978-3-540-85156-1_77, 2008.


  233. R. Kroeger, T. Paskova, A. Rosenauer, D. Hommel, B. Monemar, P. Fini, B. Haskell, J. Speck, and S. Nakamura. On the mechanism of dislocation and stacking fault formation in a-plane GaN films grown by hydride vapor phase epitaxy. In Physics of Semiconductors, 28th International Conference. Vienna, Austria. 24-28 July 2006. AIP-Conference-Proceedings. 2007; 893: 341-2, 2007.


  234. R. Kröger, T. Paskova, D. Hommel, A. Rosenauer, P. Fini, B. Haskell, J. Speck, S. Nakamura, and B. Monemar. Defects in a-plane GaN films on r-plane sapphire. In Springer Proceedings in Physics: MSM(2007), 2007.


  235. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, and M. Hetterich. The role of segregation in InGaAs heteroepitaxy. In presented at THERMEC, Advanced thin films and nanomaterials (2006) Materials Science Forum Vols. 539-543 (2007) 3540-3545, 2007.


  236. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, and M. Hetterich. The role of segregation in InGaAs heteroepitaxy. In Materials Science Forum, 539-543, (2007), 3540, 2007.


  237. R. Popescu, E. Müller, D. Gerthsen, M. Wanner, M. Schowalter, A. Rosenauer, and A. Böttcher. Mean Inner Coulomb Potential of Au Clusters Analyzed by Transmission Electron Holography. In Proceedings of Microscopy and Microanalysis Conference (2007, 2007.


  238. R. Popescu, E. Müller, D. Gerthsen, M. Wanner, M. Schowalter, A. Rosenauer, A. Böttcher, D. Löffler, and P. Weis. Increase of the Mean Inner Coulomb Potential of Au in Au Clusters Induced by Surface Tension. In MC 2007, Saarbrücken, Germany, September 2-7, 2007 Microsc. Microanal. 13 (Suppl. 3), 2007, 138 DOI: 10.1017/S1431927607080695, 2007.


  239. A. Pretorius, T. Yamaguchi, K. Müller, R. Kröger, D. Hommel, and A. Rosenauer. Concentration Measurement In Free-Standing InGaN Nano-Islands With Transmission Electron Microscopy. In MC 2007, Saarbrücken, Germany, September 2-7, 2007 Microsc. Microanal. 13 (Suppl. 3), 2007, 312, 2007.


  240. A. Rosenauer. A Local Absorptive Potential Multislice Approximation to Calculate Intensity Contributions from Thermal Diffuse Scattering in Conventional TEM. In MC 2007, Saarbrücken, Germany, September 2-7, 2007 Microsc. Microanal. 13 (Suppl. 3), 2007, 024 DOI: 10.1017/S1431927607080129, 2007.


  241. Andreas Rosenauer and Marco Schowalter. STEMSIM-a new software tool for simulation of STEM HAADF Z-contrast imaging. In A. G. Cullis and P. A. Midgley, editors, Springer Proceedings in Physics, volume 120, pages 169--172, 2007. Springer.


  242. Andreas Rosenauer, Marco Schowalter, Knut Müller, John Titantah, and Dirk Lamoen. Ab-inito Methods as Tools for Quantitative High-Resolution Transmission Electron Microscopy. In MRS Fall Meeting, Boston (USA) [Invited talk], 2007.


  243. A. Rosenauer, M. Schowalter, K. Müller, J. Titantah, D. Lamoen, P. Kruse, and D. Gerthsen. Ab-inito Methods as Tools for Quantitative High-Resolution Transmission Electron Microscopy. In MRS Autumn Meeting 2008 Symposium C: Quantitative Electron Microscopy for Materials Science SESSION C21: HRTEM and Quantitative Comparison of Experiment and Theory II, 2007.


  244. M. Schowalter, A. Rosenauer, J. Titantah, and D. Lamoen. Calculation of Debye-Waller temperature factors for GaAs. In Springer Proceedings in Physics: MSM(2007), 2007.


  245. M. Schowalter, A. Rosenauer, J. Titantah, and D. Lamoen. Temperature dependence of Debye-Waller Factors of sphalerite III-V Semiconductors calculated from Ab Initio Force Constants. In MC 2007, Saarbrücken, Germany, September 2-7, 2007 Microsc. Microanal. 13 (Suppl. 3), 2007, 128 DOI: 10.1017/S1431927607080646, 2007.


  246. J. T. Titantah, D. Lamoen, M. Schowalter, and Rosenauer. Bond length variations in InGaAs crystals fom Tersoff potential. In Springer Proceedings in Physics: MSM(2007), 2007.


  247. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission Electron Microscopy Study of In-Segregation and Critical Floating-Layer Content of Indium for Island Formation in InGaAs. In Proceedings of the International Microscopy Conference 16, Sapporo, Japan (2006), 2006.


  248. A. Pretorius, M. Schowalter, N. Daneu, R. Kröger, A. Recnik, and A. Rosenauer. Structural analysis of pyramidal defects in Mg-doped GaN. In ICNS-6, August / September 2005, Bremen Phys. stat. sol c, 3 (2006), 1803, 2006.


  249. A. Pretorius, M. Siebert, T. Schmidt, R. Kroeger, T. Yamaguchi, D. Hommel, J. Falta, and A. Rosenauer. Indium Concentration Measurements in Nano-Sized InGaN Islands Using High Resolution Transmission Electron Microscopy.. In Proceedings of the 16th International Microscopy Congress, Sapporo, Japan, 1454, 2006, 2006.


  250. A. Pretorius, T. Yamaguchi, C. Kuebel, R. Kröger, D. Hommel, and A. Rosenauer. TEM analyses of wurtzite InGaN islands grown by MOVPE and MBE. In ICNS 6, August / September 2005, Bremen Phys. stat. sol c, 3 (2006), 1679-1682, 2006.


  251. A. Rosenauer, A. Pretorius, M. Schowalter, K. Müller, T. Yamaguchi, D. Hommel, D. Litvinov, and D. Gerthsen. Composition determination of semiconductor nanostructures. In NVvM - BSM Joint Meeting Lunteren, NL, November 26-28, 2006, 2006.


  252. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. Ab initio computation of 002 structure factors for electron scattering in strained InGaAs. In Proceedings of DFTEM, Vienna (2006), 2006.


  253. E. Roventa, G. Alexe, M. Schowalter, R. Kroeger, D. Hommel, and A. Rosenauer. Anisotropic Spatial Correlation of CdSe/Zn(S)Se Quantum dot Stacks Grown by MBE. In Presented at 12th International Conference on II-VI Compounds, September 12-16, Warsaw, Poland Phys. Stat. Sol.-C, 3 (2006) 887-890, 2006.


  254. M. Schowalter, A. Rosenauer, D. Litvinov, and D. Gerthsen. Investigation of segregation by quantitative transmission electron microscopy. In Optica Applicata 36 (2006) 297-309, 2006.


  255. M. Schowalter, A. Rosenauer, J. Titantah, D. Lamoen, P. Kruse, and D. Gerthsen. Computation of the mean inner Coulomb potential of technological important semiconductors, gold and amorphous carbon. In Proceeding of DFTEM, Vienna (2006), page 11, 2006.


  256. T. Yamaguchi, S. Einfeldt, S. Gangopadhyay, A. Pretorius, A. Rosenauer, J. Falta, and D. Hommel. Two to three dimensional transitions of InGaN and the impact of GaN overgrowth. In ICNS 6, August / September 2005, Bremen Phys. stat. sol c, 3 (2006), 1396-1399, 2006.


  257. M. Beer, K. Engl, J. Zweck, A. Able, M. Wegscheider, M. Schowalter, and A. Rosenauer. Quantative TEM Analysis of the composition of InGaN/AlGaN layers: Selection of the proper imaging conditions. In Presented at Microscopy Conference Davos (2005), 2005.


  258. D. Litvinov, D. Gerthsen, A. Rosenauer, T. Passow, M. Grün, C. Klingshirn, and M. Hetterich. In-distribution in InGaAs Quantum Wells and Quantum Islands. In Presented at MCMXIV, Oxford, 2005.


  259. E. Müller, P. Kruse, D. Gerthsen, A. Rosenauer, M. Schowalter, D. Lamoen, R. Kling, and A. Waag. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography. In Springer Proceedings in Physics 107, 233 (2005), ISBN: 3.540-31914-X, 2005.


  260. E. Müller, P. Kruse, D. Gerthsen, A. Rosenauer, M. Schowalter, D. Lamoen, R. Kling, and A. Waag. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography. In Presented at E-MRS 2005 Spring Meeting Strassbourg (2005), 2005.


  261. A. Pretorius, T. Yamaguchi, R. Kroeger, C. Kuebel, D. Hommel, and A. Rosenauer. Investigation of In(x)Ga(1-x)N islands with electron microscopy. In Springer Proceedings in Physics 107, 17 (2005), ISBN: 3.540-31914-X, 2005.


  262. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron diffraction in strained In(x)Ga(1-x)As. In Springer Proceedings in Physics 107, 151 (2005), ISBN: 3.540-31914-X, 2005.


  263. M. Schowalter, A. Rosenauer, D. Lamoen, P. Kruse, and D. Gerthsen. Ab initio computation of the mean inner coulomb potential of technologically important semiconductors. In Springer Proceedings in Physics 107, 233 (2005), ISBN: 3.540-31914-X, 2005.


  264. T. Torunski, O. Rubel, W. Stolz, K. Volz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Annealing Behaviour of N Containing III/V-Semiconductors. In presented at Electronics Materials Conference (EMC) , Santa Barbara (USA), 22.06.-24.06, 2005.


  265. D. Litvinov, D. Gerthsen, A. Rosenauer, B. Daniel, and M. Hetterich. Investigation of the growth and composition of ZnMnSe heterostructures by transmission electron microscopy Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 2, 451-452. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 2, 451-452, 2004.


  266. D. Litvinov, D. Gerthsen, A. Rosenauer, P. Gilet, and L. Grenouillet. Measurement of the nigrogen-concentration profile in GaInN/GaAs heterostructures by quantitative high-resolution transmission electron microscopy Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 127-128. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 127-128, 2004.


  267. E. Piscopiello, A. Rosenauer, A. Passaseo, and G. Van Tendeloo. Segregation in InGaAs/GaAs quantum wells grown by MOCVD Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 123-124. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 123-124, 2004.


  268. A. Rosenauer and D. Gerthsen. Optimum imaging conditions for strain state analysis of InGaN/GaN heterostructures. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 103-104, 2004.


  269. M. Schowalter, P. Kruse, D. Lamoen, A. Rosenauer, and D. Gerthsen. First principles calculation of the mean inner Coulomb potential for cubic II/VI and hexagonal III/V semiconductors. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 195-196, 2004.


  270. M. Schowalter, A. Rosenauer, D. Lamoen, and D. Gerthsen. Strain state analysis of InGAAs/GaAs heterostructures: Elastic relaxation in cross section and cleaved specimen,. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 129-130, 2004.


  271. T. Torunski, K. Volz, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Quantification of N distribution in Ga(Nas)/GaAs multi-quantum well structures. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 2, 441-442, 2004.


  272. D. Gerthsen, E. Hahn, V. Potin, A. Rosenauer, B. Kuhn, J. Off, F. Scholz, A. Dussaigne, B. Damilano, and N. Grandjean. In distribution in InGaN quantum wells: influence of phase separation, In segregation and In desorption. In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003), 2003.


  273. P. Kruse, A. Rosenauer, and D. Gerthsen. Determination of the mean inner potential in III-V semiconductors by electron holography. In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003), 2003.


  274. D. Litvinov, A. Rosenauer, D. Gerthsen, P. Kratzert, M. Rabe, and F. Henneberger. Influence of ZnSe cap layer growth on the morphology and Cd distribution in CdSe/ZnSe quantum dot structures. In Proceedings of the SPIE - The Internation Society for Optical Engineering 5023 (2003) 42-4, 2003.


  275. M. Melzer, Marco Schowalter, Andreas Rosenauer, D. Gerthsen, and J. P. Reithmaier. Untersuchung der Segregation von In in InAs/AlAs Heterostrukturen. In DPG Frühjahrstagung, Dresden (Germany) Verhandl. DPG (VI) 38, 1, 186, 2003.


  276. A. Rosenauer, D. Gerthsen, D. Van Dyck, S. Van Aert, and A.J. Den Dekker. Present state of the composition evaluation of ternary semiconductor nanostructures by lattice fringe analysis,. In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003), 2003.


  277. A. Rosenauer, M. Melzer, M. Schowalter, D. Gerthsen, E. Piscopiello, A. Passaseo, R. Cingolani, R. Reithmaier, J. P. amd Krebs, A. Forchel, and G. Van Tendeloo. Segregation in InGaAs/GaAs Quantum Wells: MOCVD versus MBE. In Microscopy Conference MC2003, International Forum for Advanced Microscopy, September 7-12, 2003, Dresden, Germany Micrsocopy and Microanalysis 9 (2003) 230-1, 2003.


  278. M. Schowalter, M. Melzer, A. Rosenauer, D. Gerthsen, R. Krebs, J. P. Reithmaier, A. Forchel, M. Arzberger, M. Bichler, G. Abstreiter, M. Grau, M.-C. Amann, R. Sellin, and D. Bimberg. Segregation in III-V semiconductor heterostructures studied by transmission electron microscopy,. In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003), 2003.


  279. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative investigation of Sb distribution in GaSb/GaAs heterostructures,. In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003), 2003.


  280. M. Schowalter, A. Rosenauer, D. Gerthsen, R. Sellin, and D. Bimberg. Structure factors for the composition determination of InGaAs/GaAs quantum wells with the 002 beam: Isolated atom approximation versus density function theory. In Microscopy Conference MC2003, International Forum for Advanced Microscopy, September 7-12, 2003, Dresden, Germany Microscopy and Microanalysis 9 (2003), 234-5, 2003.


  281. M. Efremov, V. Volodin, V.A. Sachkov, V. Preobrazhenskii, B. Semyagin, N. Ledentsov, V. Ustinov, I. Soshnikov, D. Litvinov, A. Rosenauer, and D. Gerthsen. RAMAN study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces. In Microelectron. J. 33, 535-40, 2002.


  282. E. Hahn, Andreas Rosenauer, Dagmar Gerthsen, J. Off, and F. Scholz. In-Verteilung beim MOVPE-Wachstum von GaInN-Quantenfilmen. In DPG Frühjahrstagung, Regensburg (Germany) Verhandl. DPG (VI) 37,1, 195, 2002.


  283. P. Kruse, A. Rosenauer, and D. Gerthsen. Determination of the mean inner potential in III-V semiconductors by electron hologrpahy. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, 2002.


  284. E. Kurtz, B. Dal Don, M. Schmidt, H. Kalt, C. Klingshirn, D. Litvinov, A. Rosenauer, and D. Gerthsen. CdSe quantum islands in ZnSe: a new approach. In Thin Solid Films 412, 89-95, 2002.


  285. D. Litvinov, A. Rosenauer, D. Gerthsen, and H. Preis. Transmission electron microscopy investigation of CdSe/ZnSe quantum dot structures. In Phys. Stat. Solidi B 229 (1), 523-527, 2002.


  286. V. Potin, E. Hahn, M. Schowalter, A. Rosenauer, D. Gerthsen, B. Kuhn, and F. Scholz. Quantitative analysis of the In-distribution in InGaN/GaN-heterostructures. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, 2002.


  287. A. Rosenauer and D. Gerthsen. Composition evaluation of ternary semiconductor nanostructres by lattice fringe analysis. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 195, 2002.


  288. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Compositional analysis of semiconductor nanostructures based on electron holography and a chemically sensitive reflection. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 291, 2002.


  289. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in InGaAs/GaAs quantum dot structrues. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 59, 2002.


  290. Marco Schowalter, Andreas Rosenauer, Dagmar Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Untersuchung der Segregation von In in InAs/AlAs Heterostrukturen. In DPG Frühjahrstagung, Regensburg (Germany) Verhandl. DPG (VI) 37, 1, 163, 2002.


  291. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Influence of growth interruptions on the composition of GaSb/GaAs quantum wells. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 53, 2002.


  292. M. Schowalter, A. Rosenauer, D. Gerthsen, R. Sellin, and D. Bimberg. Segregation in MBE and MOCVD: A comparison. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 113, 2002.


  293. K. Chinyama, K. O'Donnell, A. Rosenauer, and E. Kurtz. Composition of self-assembled quantum dots in CdSe-ZnSe quantum well structures. In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.


  294. Dagmar Gerthsen and Andreas Rosenauer. Halbleiter-Quantenpunkte: Welche Informationen kann die Elktronenmikroskopie liefern?. In DPG Frühjahrstagung, Hamburg (Germany) [Talk] Plenarvortrag, Frühjahrstagung des Arbeitskreises Festkörperphysik 2001, Hamburg, Verhandl. DPG (VI) 36, 1/(2001), 62, 2001.


  295. E. Kurtz, M. Schmidt, D. Litvinov, B. Dal Don, R. Dianoux, H. Zhao, H. Kalt, A. Rosenauer, D. Gerthsen, and C. Klingshirn. Correlation in vertically stacked CdSe based quantum islands. In Phys. Stat. Solidi B 229 (1), 519-522, 2001.


  296. D. Litvinov, D. Gerthsen, A. Rosenauer, H. Preis, E. Kurtz, and C. Klingshirn. Cd distribution and defects in single and multilayer CdSe/ZnSe quantum dot structures,. In International Conference on Semiconductor Quantum Dots (QD 2000). - 31 July-3 Aug. 2000 Phys. Status Solidi B 224, 147-51, 2001.


  297. D. Litvinov, A. Rosenauer, D. Gerthsen, and H. Preis. Cd-Verteilung und Defekte in CdSe/ZnSe Quantenpunktstrukturen,. In DPG Frühjahrstagung, Hamburg (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 2001, Hamburg, Verhandl. DPG (VI) 36, 1/(2001), 158, 2001.


  298. V. Potin, E. Hahn, A. Rosenauer, and D. Gerthsen. Determination of indium composition fluctuation in InGaN/GaN quantum wells by quantitative high resolution electron microscopy. In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Inst. Phys. Conf. Ser. 169, 25-28 Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.


  299. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Atomic-scale composition analysis of semiconductor quantum dots by transmission electron microscopy,. In 7th International Symposium on Advanced Physical Fields „Fabrication and Characterization of Nanostructured Materialsâ€, 12-15.11.2001 Tsukuba, 2001.


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  301. A. Rosenauer, D. Van Dyck, D. Gerthsen, M. Arzberger, G. Böhm, and G. Abstreiter. Structural and chemical investigation of InAs/GaAs nanostructures by transmission electron microscopy,. In International Conference on Semiconductor Quantum Dots (QD 2000). - 31 July-3 Aug. 2000 Phys. Status Solidi B 224, 213-16, 2001.


  302. S. Schaefer, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Bartels, and D. Schikora. HRTEM-Untersuchung von CdZnSe/GaAs(100) Inselstrukturen. In DPG Frühjahrstagung, Hamburg (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 2001, Hamburg, Verhandl. DPG (VI) 36, 1/(2001), 180, 2001.


  303. M. Schowalter, B. Neubauer, A. Rosenauer, D. Gerthsen, O. Schön, and M. Heuken. MOCVD growth of Ga(Al)N/InGaN/Ga(Al)N-Heterostructures: Influence of the Buffer Layer Al-Concentration an d Growth Duration on the In-Incorporation in InGaN. In MRS spring meeting 2001, San Francisco, 2001.


  304. M. Schowalter, P. Pfundstein, B. Neubauer, A. Rosenauer, D. Gerthsen, T. Stephan, H. Kalt, A. Allam, B. Schneller, O. Schön, and M. Heuken. Composition of InGaN:In distribution and influence of lattice strain. In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Inst. Phys. Conf. Ser. 169, 273-276 Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.


  305. M. Strassburg, A. Hoffmann, R. Heitz, U. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, D. Schikora, and K. Lischka. High-excitation properties and time-resolved behaviour of three-dimensional CdSe/ZnSe islands. In DPG Frühjahrstagung, Hamburg (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 2001, Hamburg, Verhandl. DPG (VI) 35, 4/(2000), 587, 2001.


  306. D. Gerthsen, E. Hahn, B. Neubauer, A. Rosenauer, O. Schön, M. Heuken, and A. Rizzi. Composition fluctuations in InGaN analized by transmission electron microscopy,. In 216. WE-Heraeus Seminar on Nitrogen in Solids and at Solid Surfaces: Present Status and Future Trends. - 30 May-2 June 1999. Status Solidi A 177, 145-55, 2000.


  307. D. Gerthsen, A. Rosenauer, D. Litvinov, and N. Peranio. Structural and chemical analysis of CdSe islands in a ZnSe matrix by transmission electron microscopy. In II-VI Compounds 1999. Ninth International Conference, 1-5 Nov. 1999 J. Cryst. Growth 214-215, 707-11, 2000.


  308. N. N. Ledentsov, I. L. Krestnikov, M. Strassburg, R. Engelhardt, S. Rodt, R. Heitz, U.W. Pohl, A Hoffmann, D. Bimberg, A. V. Sakharov, V. Lundin, A. S. Usikov, Z. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Quantum dots formed by ultrathin insertions in wide-gap matrices,. In Third International Workshop on Molecular Beam Epitaxy- Growth Physics and Technology (MBE-GPT). - 23-28 May 1999. Thin Solid Films 367, 40-7, 2000.


  309. D. Luerssen, R. Bleher, H. Kalt, H. Richter, T. Schimmel, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, B. Jobst, K. Ohkawa, and D. Hommel. Localization of excitons in pairs of natural dots induced by stacking faults in ZnSe quantum wells. In 6th International Meeting on Optics of Excitons in Confined Systems (OECS-6). - 30 Aug.-2 Sept. 1999 Phys. Status Solidi A 178, 189-92, 2000.


  310. D. Luerssen, R. Bleher, H. Kalt, H. Richter, T. Schimmel, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, B. Jobst, K. Ohkawa, and D. Hommel. Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells,. In II-VI Compounds 1999. Ninth International Conference, 1-5 Nov. 1999 J. Cryst. Growth 214-215, .634-8, 2000.


  311. B. Neubauer, A. Rosenauer, D. Gerthsen, O. Schön, and M. Heuken. Influence of the growth duration on the In concentration in epitaxial InGaN layers,. In 12th European Congress on Electron Microscopy (EUREM 12), July 9-14 2000, Brno, Czech Republic, Proceedings, Volume II, P 281, 2000.


  312. A Rosenauer and D. Van Dyck. The effect of strain on chemically sensitive imaging with the (002) reflection in sphalerite type crystals. In 12th European Congress on Electron Microscopy (EUREM 12), July 9-14 2000, Brno, Czech Republic, Proceedings, Volume III, I 121, 2000.


  313. D. Schikora, S. Schwedhelm, I. Kudryashov, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg. Investigations on the formation kinetics of CdSe quantum dots,. In II-VI Compounds 1999. Ninth International Conference, 1-5 Nov. 1999 J. Cryst. Growth 214-215, 698-702, 2000.


  314. E. Schomburg, S. Brandl, S. Winnerl, K.F. Renk, N. N. Ledentsov, V. Ustinov, A. Zhukov, P.S. Kopev, H.W. Hubers, J. Schubert, H.P. Roser, A. Rosenauer, D. Litvinov, D. Gerthsen, and J.M. Chamberlain. Miniband transport in a GaAs/AlAs superlattice with submonolayer barriers in a static and THz electric field,. In Ninth International Conference on Modulated Semiconductor Structures. MSS9 / Japan Soc. Appl. Phys. Physica E 7, 814-18, 2000.


  315. M. Strassburg, T. Deniozou, A. Hoffmann, S. Rodt, V. Turck, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, I. Kudryashov, K. Lischka, and D. Schikora. Optical identification of quantum dot types in CdSe/ZnSe structures. In II-VI Compounds 1999. Ninth International Conference, 1-5 Nov. 1999 J. Cryst. Growth 214-215,756-60, 2000.


  316. M. Strassburg, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Kudryashov, K.. Lischka, and D. Schikora. Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanov mode,. In Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000). - 5-10 March 2000 Phys. Status Solidi A 180, 281-5, 2000.


  317. R. Bleher, H. Kalt, A. Kamilli, A. Rosenauer, D. Gerthsen, K. Ohkawa, and D. Hommel. Erhöhte bandkantennahe Lumineszenzausbeute verknüpft mit Frank-Defekten in ZnSe-Quantenfilmen. In DPG Frühjahrstagung, Münster (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1999, Münster, Verhandl. DPG (VI) 34, 1999, 768, 1999.


  318. I. L. Krestnikov, M. Strassburg, M. Caesar, V. Shchukin, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, V.G. Malyshkin, P.S. Kop'ev, Z. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Vertical arrangement and wavefunction control in structures with 2D quantum dots (invited). In Proceedings ICPS24, Jerusalem, August 2-7, 1998, D. Gershoni, Ed. (World Scientific, 1999), pp. 70-77, 1999.


  319. D. Litvinov, A. Rosenauer, and D. Gerthsen. Struktur und Zusammensetzung von CdSe/ZnSe-Quantenpunkten,. In DPG Frühjahrstagung, Münster (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1999, Münster, Verhandl. DPG (VI) 34, 1999, 722, 1999.


  320. B. Neubauer, E. Hahn, A. Rosenauer, and D. Gerthsen. Investigation of Composition Fluctuations in InxGa1-xN,. In Microcopy of Semiconducting Materials 1999, Oxford, UK, 22-25 March 1999, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (1999), 1999.


  321. B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, M. Stutzmann, M. Albrecht, and H.P. Strunk. Analysis of composition fluctuations in Al(x)Ga(1-x)N. In E-MRS 1998 Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials. - 16-19 June 1998 Mater. Sci. Eng. B 59, 182-5, 1999.


  322. W. Oberst, A. Rosenauer, D. Gerthsen, and A. Förster. Quantitative transmissionselektronenmikroskopische Untersuchung von InGaAs/GaAs-Quantenpunktstrukturen. In DPG Frühjahrstagung, Münster (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1999, Münster, Verhandl. DPG (VI) 34, 1999, 768, 1999.


  323. N. Peranio, A. Rosenauer, and D. Gerthsen. Strukturelle und chemische Analysen an CdSe/ZnSe-Quantenpunktstrukturen. In DPG Frühjahrstagung, Münster (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1999, Münster, Verhandl. DPG (VI) 34, 1999, 769, 1999.


  324. A. Rosenauer, W. Oberst, D. Gerthsen, and A. Förster. Atomic scale analysis of the indium distribution in InGaAs/GaAs(001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions,. In MRS Fall Meeting 1998, Symposium: Growth Instabilities and Decompostion DuringHeteroepitaxy. Thin Solid Films 357, 18-21, 1999.


  325. A. Rosenauer, N. Peranio, and D. Gerthsen. Investigation of CdSe/ZnSe Quantum Dot Structures by Composition Evaluation by Lattice Fringe Analysis,. In Microcopy of Semiconducting Materials 1999, Oxford, UK, 22-25 March 1999, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (1999), 1999.


  326. M. Strassburg, R. Engelhardt, R. Heitz, U.W. Pohl, S. Rodt, V. Turck, A. Hoffmann, D. Bimberg, I. L. Krestnikov, N. N. Ledentsov, Z. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Quantum dots formed by ultrathin CdSe-ZnSe insertions. In Proceedings of the 7th International Symposium Nanostructures: Physics and Technology, Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p.13-19, 1999.


  327. M. Strassburg, I. L. Krestnikov, A. Göldner, V. Kutzer, A. Hoffmann, N. N. Ledentsov, Z. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Excitonic gain in CdSe/ZnSe quantum dot structures. In Proceedings ICPS24, Jerusalem, August 2-7, 1998, D. Gershoni, Ed. (World Scientific), 1999.


  328. U. Fischer, A. Rosenauer, T. Remmele, D. Gerthsen, and A. Förster. HRTEM-Untersuchung von InGaAs/GaAs(001) - Inselstrukturen. In DPG Frühjahrstagung, Regensburg (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1998, Regensburg, Verhandl. DPG (VI) 33, 1998, 728, 1998.


  329. I. L. Krestnikov, S. V. Ivanov, P. Kop'ev, N. N. Ledentsov, M. Maximov, A. V. Sakharov, S. V. Sorokin, A. Rosenauer, D. Gerthsen, C.M. Sotomayor Torres, D. Bimberg, and Z. Alferov. RT exciton waveguiding and lasing in submonolayer CdSe-(Zn, Mg)(S, Se) structures. In Second International Conference on Low Dimensional Structures and Devices. Lisbon, Portugal, 19-21 May 1997 Materials Science & Engineering B (Solid-State Materials for Advanced Technology) B51, 26-29, 1998.


  330. Ch. Märkle, W. Petri, M. Grün, U. Woggon, C. Klingshirn, A. Wurl, U. Fischer, A. Rosenauer, D. Gerthsen, T. Kümmell, G. Bacher, and A. Forchel. Kubische CdS/ZnS-Quantentrogstrukturen. In DPG Frühjahrstagung, Regensburg (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1998, Regensburg, Verhandl. DPG (VI) 33, 1998, 684, 1998.


  331. A. Rosenauer, D. Gerthsen, and A. Förster. Composition evaluation of In(x)Ga(1-x)As island structures by lattice fringe analysis and strain state analysis,. In Electron Microscopy 1998, paper presented at ICEM14, Cancun, Mexico, 31 August to 4 Septermber 1998, Symposium S, Volume I , 613-14, 1998.


  332. A. Wurl, A. Rosenauer, D. Gerthsen, B. Hahn, and W. Gebhardt. Frühstadien des Wachstums von ZnTe Epitaxieschichten auf (100)- und (111)-GaAs Substraten. In DPG Frühjahrstagung, Regensburg (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1998, Regensburg, Verhandl. DPG (VI) 33, 1998, 682, 1998.


  333. A. Rosenauer, T. Remmele, U. Fischer, A. Förster, and D. Gerthsen. Strain determination in mismatched semiconductor heterostructures by the digital analysis of lattice images,. In Microcopy of Semiconducting Materials 1997, Oxford, UK, 7-10 April 1997, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (1997), 39-42, 1997.


  334. T.H. Walter, A. Rosenauer, D. Gerthsen, F. Fischer, R. Gall, Th. Litz, A. Waag, and G. Landwehr. Transmission electron microscopy investigations of an epitaxial beryllium-chalcogenide-based superlattice,. In Microcopy of Semiconducting Materials 1997, Oxford, UK, 7-10 April 1997, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (1997), 315-318, 1997.


  335. M. J. Kastner, D. Brunhuber, B. Hahn, A. Rosenauer, and W. Gebhardt. Untersuchungen zum Gitterrelaxationsverhalten von MOVPE gewachsenen ZnSSe-Schichten. In DPG Frühjahrstagung, Münster (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1996, Regensburg, Verhandl. DPG (VI) 31, 1996, 1434, 1996.


  336. T. Reisinger, S. Lankes, M. Kastner, A. Rosenauer, F. Franzen, M. Meier, and W. Gebhardt. Growth, Structural and Optical Characterization of MBE ZnCdSe/ZnSe QWs,. In 7th International Conference II-VI Compounds and Devices. Edinburgh, UK, 13-18 Aug 1995, J. Cryst. Growth 159, 510-513, 1996.


  337. W. Gebhardt, T. Reisinger, B. Hahn, and A. Rosenauer. Growth of Large Gap II-VI Semiconductors by MBE and MOVPE: A Comparative Study,. In International Conference on Semiconductor Heteroepitaxy, Monpellier, France, July 4th to 7th, World Scientific, 1995, 51-58, 1995.


  338. M. Grün, M. Hetterich, C. Klingshirn, A Rosenauer, and W. Gebhardt. Decrease of the Phase Stability in II-VI Epitaxial Layers Due to Strain,. In II-VI Compounds and Semimagnetic Semiconductors. Third European Workshop on II-VI Compounds and Fourth International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors. Linz, Austria, 26-28 Sept 1994, Materials Science Forum Vols. 182-184, 235-238, 1995.


  339. T. Reisinger, A. Rosenauer, F. Franzen, and W. Gebhardt. In-Situ Growth Control of ZnSe/GaAs and ZnCdSe Quantum Wells,. In International Conference on Semiconductor Heteroepitaxy, Monpellier, France, July 4th to 7th, World Scientific, 1995, 118-121, 1995.


  340. A. Rosenauer, T. Reisinger, E. Steinkirchner, J. Zweck, and W. Gebhardt. Bestimmung der Diffusion von Cd in CdSe/ZnSe Quantentrogstrukturen. In DPG Frühjahrstagung, Berlin (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1995, Berlin, Verhandl. DPG (VI) 30, 1995, 1212, 1995.


  341. A. Rosenauer, G. Schütz, T. Reisinger, H. Preis, F. Franzen, and W. Gebhardt. TEM Investigation of Plastic Relaxation in ZnSe/GaAs(001), International Conference on Semiconductor Heteroepitaxy, Monpellier, France, July 4th to 7th,. In World Scientific, 1995, 114-117, 1995.


  342. N. Schnellinger, A. Rosenauer, J. Zweck, and A. Hoffmann. Investigations on Preparation Artefacts in Au/Si Cross-Sectioned Samples,. In ICEM 13 Paris 17.-22.7.1995, 1021-1022, 1995.


  343. D. Gerthsen, T. Walther, and A. Rosenauer. Quantitative High-Resolution Electron Microscopy of Semiconductor Heterostructures,. In 9. Japan-Germany Forum on Information Technology, Oita (Japan), 8.-11.11.1994, 1994.


  344. M. Grün, M. Hetterich, C. Klingshirn, A. Rosenauer, and W. Gebhardt. Strain-Relief in Wurtzite-Type CdS and CdSe Epitaxial Films,. In 22nd International Conference on The Physics of Semiconductors, Vol. 3, Vancouver, Canada, August 15-19, 1994 World Scientific 3, (1995) 2665, 1994.


  345. A. Rosenauer, H. Stanzl, K. Wolf, S. Bauer, M. Kastner, M. Grün, and W. Gebhardt. Spatial Confinement of Misfit Dislocations at the Interfaces of Epitaxial CdSe/GaAs(111) and ZnTe/GaAs(111) Studied by TEM,. In 17th International Conference on Defects in Semiconductors. Gmunden, Austria, 18-23 July 1993, Materials Science Forum vols. 143-147, 567-572, 1994.


  346. H. Stanzl, A. Rosenauer, K. Wolf, M. Kastner, B. Hahn, and W. Gebhardt. MOVPE Growth of ZnSeTe on (111) and (001) GaAs Substrates,. In SPIE 2140 Epitaxial Growth Processes, Los Angeles (USA), 138-147, 1994.


  347. A. Naumov, K. Wolf, H. Stanzl, A. Rosenauer, S. Lankes, and W. Gebhardt. Exciton spectra of ZnSeTe epilayers and ZnTe/ZnSeTe/ZnTe SQWs grown by MOCVD. In DPG Frühjahrstagung, Münster (Germany) 13th General Conference of the Condensed Matter Division (European Physical Society) in conjunction with Arbeitskreis Festkörperphysik (Deutsche Physikalische Gesellschaft), Europhysics Conference Abstracts 17A, 1436, 1993.


  348. H. Stanzl, A. Rosenauer, K. Wolf, A. Naumov, S. Lankes, M. Kastner, F. Gilg, G. Hirmer, T. Starke, and W. Gebhardt. MOVPE Growth and Characterization of ZnTeSe-Epilayers and ZnTe/ZnTeSe SQWs. In DPG Frühjahrstagung, Münster (Germany) 13th General Conference of the Condensed Matter Division (European Physical Society) in conjunction with Arbeitskreis Festkörperphysik (Deutsche Physikalische Gesellschaft), Europhysics Conference Abstracts 17A, 1425, 1993.


  349. S. Bauer, A. Rosenauer, J. Skorsetz, W. Kuhn, H.P. Wagner, J. Zweck, and W. Gebhardt. Investigation of Strained ZnTe Epilayers by High Resolution Electron Microscopy,. In Fifth international conference on II-VI-compounds, Tamano, Japan, 8-13 Sept 1991, J. Cryst Growth 117, 297-302, 1992.


Miscellaneous
  1. Knut Müller-Caspary and Andreas Rosenauer. STEM and TEM Simulation [Tutorial], June 2015.


  2. Knut Müller, Thorsten Mehrtens, Florian Krause, Marco Schowalter, and Andreas Rosenauer. Simulation of STEM images [Invited talk], February 2014.


  3. Knut Müller and Andreas Rosenauer. Quantitative STEM simulation/Evaluation [Tutorial], September 2014.


  4. Knut Müller and Andreas Rosenauer. Simulation of STEM images with the STEMsim software [Tutorial], March 2013.


  5. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Kerstin Volz, Heike Soltau, Pavel Potapov, and Karl Engl. Strain Analysis by Nano-Beam Electron Diffraction [Invited talk], 2013.



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