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Publications of year 1997
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Articles in journal or book chapters
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M. Hetterich,
M. Grün,
W. Petri,
C. Märkle,
C. Klingshirn,
A. Wurl,
U. Fischer,
A. Rosenauer,
and D. Gerthsen.
Elastic and plastic strain relaxation in ultrathin CdS/ZnS quantum-well structures grown by molecular-beam epitaxy.
Phys. Rev. B,
56:12369--12374,
November 1997.
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Marcus J. Kastner,
Gabriella Leo,
Doris Brunhuber,
Andreas Rosenauer,
Herbert Preis,
Berthold Hahn,
Markus Deufel,
and Wolfgang Gebhardt.
Investigations on strain relaxation of ZnS(x)Se(1−x) layers grown by metalorganic vapor phase epitaxy.
Journal of Crystal Growth,
172(1-2):64--74,
1997.
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A. Rosenauer,
U. Fischer,
D. Gerthsen,
and A. Forster.
Composition evaluation of In(x)Ga(1-x)As Stranski-Krastanow-island structures by strain state analysis.
Applied Physics Letters,
71(26):3868--3870,
1997.
Keyword(s): indium compounds,
gallium arsenide,
III-V semiconductors,
island structure,
transmission electron microscopy,
lattice constants,
molecular beam epitaxial growth,
semiconductor epitaxial layers,
finite element analysis,
segregation,
semiconductor growth.
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A. Rosenauer,
T. Remmele,
D. Gerthsen,
K. Tillmann,
and A. Förster.
Atomic scale strain measurements by the digital analysis of transmission electron microscopic lattice images.
Optik (Stuttgart),
105(3):99--107,
1997.
Note: Eng.
Keyword(s): Experimental study,
TEM,
Electron microscopy,
High-resolution methods,
Measuring methods,
Stress analysis,
Layer thickness,
Crystals,
Semiconductor materials.
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U. Woggon,
W. Langbein,
J. M. Hvam,
A. Rosenauer,
T. Remmele,
and D. Gerthsen.
Electron microscopic and optical investigations of the indium distribution in GaAs capped In(x)Ga(1-x)As islands.
Applied Physics Letters,
71(3):377--379,
1997.
Keyword(s): indium compounds,
gallium arsenide,
III-V semiconductors,
semiconductor quantum dots,
buried layers,
transmission electron microscopy,
photoluminescence,
molecular beam epitaxial growth,
semiconductor growth,
semiconductor epitaxial layers.
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A. Rosenauer,
T. Remmele,
U. Fischer,
A. Förster,
and D. Gerthsen.
Strain determination in mismatched semiconductor heterostructures by the digital analysis of lattice images,.
In Microcopy of Semiconducting Materials 1997, Oxford, UK, 7-10 April 1997, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (1997), 39-42,
1997.
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T.H. Walter,
A. Rosenauer,
D. Gerthsen,
F. Fischer,
R. Gall,
Th. Litz,
A. Waag,
and G. Landwehr.
Transmission electron microscopy investigations of an epitaxial beryllium-chalcogenide-based superlattice,.
In Microcopy of Semiconducting Materials 1997, Oxford, UK, 7-10 April 1997, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (1997), 315-318,
1997.
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