1. I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, Yu.G. Musikhin, A.P. Kartashova, A.S. Usikov, A.F. Tsatsul’nikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A.C. Plaut, A.A. Hoffmann, and D. Bimberg. Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots. Semiconductors, 34(4):481--487, 2000.



2. D. Litvinov, A. Rosenauer, D. Gerthsen, and N. N. Ledentsov. Character of the Cd distribution in ultrathin CdSe layers in a ZnSe matrix. Phys. Rev. B, 61:16819--16826, June 2000.



3. N. Peranio, A. Rosenauer, D. Gerthsen, S. V. Sorokin, I. V. Sedova, and S. V. Ivanov. Structural and chemical analysis of CdSe/ZnSe nanostructures by transmission electron microscopy. Phys. Rev. B, 61:16015--16024, June 2000.



4. A. Rosenauer, W. Oberst, D. Litvinov, D. Gerthsen, A. Förster, and R. Schmidt. Structural and chemical investigation of $In_{0.6}Ga_{0.4}As$ Stranski-Krastanow layers buried in GaAs by transmission electron microscopy. Phys. Rev. B, 61(12):8276--8288, March 2000.



5. D. Schikora, S. Schwedhelm, D. J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg. Investigations on the Stranski--Krastanow growth of CdSe quantum dots. Applied Physics Letters, 76(4):418--420, 2000. Keyword(s): semiconductor quantum dots, molecular beam epitaxial growth, self-assembly, island structure, stacking faults, cadmium compounds, II-VI semiconductors, reflection high energy electron diffraction, photoluminescence, monolayers.



6. I.P. Soshnikov, V.V. Lundin, A.S. Usikov, I.P. Kalmykova, N.N. Ledentsov, A. Rosenauer, B. Neubauer, and D. Gerthsen. Specifics of MOCVD formation of In(x)Ga(1−x)N inclusions in a GaN matrix. Semiconductors, 34(6):621--625, 2000.



7. M. Strassburg, Th. Deniozou, A. Hoffmann, R. Heitz, U. W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, K. Lischka, and D. Schikora. Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structures. Applied Physics Letters, 76(6):685--687, 2000. Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor quantum dots, semiconductor heterojunctions, island structure, transmission electron microscopy, monolayers, photoluminescence.



8. A F Tsatsul'nikov, I L Krestnikov, W V Lundin, A V Sakharov, A P Kartashova, A S Usikov, Zh I Alferov, N N Ledentsov, A Strittmatter, A Hoffmann, D Bimberg, I P Soshnikov, D Litvinov, A Rosenauer, D Gerthsen, and A Plaut. Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition. Semiconductor Science and Technology, 15(7):766, 2000.

1. D. Gerthsen, E. Hahn, B. Neubauer, A. Rosenauer, O. Schön, M. Heuken, and A. Rizzi. Composition fluctuations in InGaN analized by transmission electron microscopy,. In 216. WE-Heraeus Seminar on Nitrogen in Solids and at Solid Surfaces: Present Status and Future Trends. - 30 May-2 June 1999. Status Solidi A 177, 145-55, 2000.



2. D. Gerthsen, A. Rosenauer, D. Litvinov, and N. Peranio. Structural and chemical analysis of CdSe islands in a ZnSe matrix by transmission electron microscopy. In II-VI Compounds 1999. Ninth International Conference, 1-5 Nov. 1999 J. Cryst. Growth 214-215, 707-11, 2000.



3. N. N. Ledentsov, I. L. Krestnikov, M. Strassburg, R. Engelhardt, S. Rodt, R. Heitz, U.W. Pohl, A Hoffmann, D. Bimberg, A. V. Sakharov, V. Lundin, A. S. Usikov, Z. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Quantum dots formed by ultrathin insertions in wide-gap matrices,. In Third International Workshop on Molecular Beam Epitaxy- Growth Physics and Technology (MBE-GPT). - 23-28 May 1999. Thin Solid Films 367, 40-7, 2000.



4. D. Luerssen, R. Bleher, H. Kalt, H. Richter, T. Schimmel, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, B. Jobst, K. Ohkawa, and D. Hommel. Localization of excitons in pairs of natural dots induced by stacking faults in ZnSe quantum wells. In 6th International Meeting on Optics of Excitons in Confined Systems (OECS-6). - 30 Aug.-2 Sept. 1999 Phys. Status Solidi A 178, 189-92, 2000.



5. D. Luerssen, R. Bleher, H. Kalt, H. Richter, T. Schimmel, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, B. Jobst, K. Ohkawa, and D. Hommel. Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells,. In II-VI Compounds 1999. Ninth International Conference, 1-5 Nov. 1999 J. Cryst. Growth 214-215, .634-8, 2000.



6. B. Neubauer, A. Rosenauer, D. Gerthsen, O. Schön, and M. Heuken. Influence of the growth duration on the In concentration in epitaxial InGaN layers,. In 12th European Congress on Electron Microscopy (EUREM 12), July 9-14 2000, Brno, Czech Republic, Proceedings, Volume II, P 281, 2000.



7. A Rosenauer and D. Van Dyck. The effect of strain on chemically sensitive imaging with the (002) reflection in sphalerite type crystals. In 12th European Congress on Electron Microscopy (EUREM 12), July 9-14 2000, Brno, Czech Republic, Proceedings, Volume III, I 121, 2000.



8. D. Schikora, S. Schwedhelm, I. Kudryashov, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg. Investigations on the formation kinetics of CdSe quantum dots,. In II-VI Compounds 1999. Ninth International Conference, 1-5 Nov. 1999 J. Cryst. Growth 214-215, 698-702, 2000.



9. E. Schomburg, S. Brandl, S. Winnerl, K.F. Renk, N. N. Ledentsov, V. Ustinov, A. Zhukov, P.S. Kopev, H.W. Hubers, J. Schubert, H.P. Roser, A. Rosenauer, D. Litvinov, D. Gerthsen, and J.M. Chamberlain. Miniband transport in a GaAs/AlAs superlattice with submonolayer barriers in a static and THz electric field,. In Ninth International Conference on Modulated Semiconductor Structures. MSS9 / Japan Soc. Appl. Phys. Physica E 7, 814-18, 2000.



10. M. Strassburg, T. Deniozou, A. Hoffmann, S. Rodt, V. Turck, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, I. Kudryashov, K. Lischka, and D. Schikora. Optical identification of quantum dot types in CdSe/ZnSe structures. In II-VI Compounds 1999. Ninth International Conference, 1-5 Nov. 1999 J. Cryst. Growth 214-215,756-60, 2000.



11. M. Strassburg, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Kudryashov, K.. Lischka, and D. Schikora. Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanov mode,. In Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000). - 5-10 March 2000 Phys. Status Solidi A 180, 281-5, 2000.

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