1. D. Gerthsen, B. Neubauer, A. Rosenauer, T. Stephan, H. Kalt, O. Schon, and M. Heuken. InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition. Applied Physics Letters, 79(16):2552--2554, 2001. Keyword(s): III-V semiconductors, MOCVD, gallium compounds, indium compounds, lattice constants, photoluminescence, red shift, semiconductor growth, semiconductor quantum wells, spectral line intensity, transmission electron microscopy, wide band gap semiconductors, 6865Fg, 7855Cr, 7867De, 8107St, 8115Gh.



2. S. Kret, P. Ruterana, A. Rosenauer, and D. Gerthsen. Extracting Quantitative Information from High Resolution Electron Microscopy. physica status solidi (b), 227(1):247--295, 2001. Keyword(s): 68.35.Dv, 68.37.Lp, 68.55.Nq, 68.65.-k, S7.12, S7.14, S8.13.



3. E. Kurtz, M. Schmidt, M. Baldauf, S. Wachter, M. Grün, H. Kalt, C. Klingshirn, D. Litvinov, A. Rosenauer, and D. Gerthsen. Suppression of lateral fluctuations in CdSe-based quantum wells. Applied Physics Letters, 79(8):1118--1120, 2001. Keyword(s): cadmium compounds, II-VI semiconductors, semiconductor quantum wells, fluctuations, photoluminescence, semiconductor growth, spectral line breadth, molecular beam epitaxial growth.



4. N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Soshnikov, V. Shchukin, V. Ustinov, A. Egorov, A. Zukov, V. Volodin, M. Efremov, V. Preobrazhenskii, B. Semyagin, D. Bimberg, and Zh. Alferov. Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces. Journal of Electronic Materials, 30:463--470, 2001. Keyword(s): Chemie und Materialwissenschaften.



5. D. Litvinov, A. Rosenauer, D. Gerthsen, H. Preis, K. Fuchs, and S. Bauer. Growth and vertical correlation of CdSe/ZnSe quantum dots. Journal of Applied Physics, 89(7):3695--3699, 2001. Keyword(s): II-VI semiconductors, cadmium compounds, island structure, molecular beam epitaxial growth, reflection high energy electron diffraction, semiconductor epitaxial layers, semiconductor growth, semiconductor quantum dots, transmission electron microscopy, zinc compounds, 6865Hb, 8105Dz, 8107Ta, 8115Hi.



6. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in In(x)Ga(1-x)As/GaAs$ Stranski-Krastanow layers}. Phys. Rev. B, 64(24):245334, December 2001.



7. A Rosenauer, D Van Dyck, M Arzberger, and G Abstreiter. Compositional analysis based on electron holography and a chemically sensitive reflection. Ultramicroscopy, 88(1):51--61, 2001. Keyword(s): Compositional analysis.



8. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Investigation of In segregation in InAs/AlAs quantum-well structures. Appl. Phys. Lett., 79(26):4426--4428, December 2001. Keyword(s): segregation, InAs, In, As, InAs/AlAs, AlAs, Al, As, quantum-well.

1. K. Chinyama, K. O'Donnell, A. Rosenauer, and E. Kurtz. Composition of self-assembled quantum dots in CdSe-ZnSe quantum well structures. In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.



2. Dagmar Gerthsen and Andreas Rosenauer. Halbleiter-Quantenpunkte: Welche Informationen kann die Elktronenmikroskopie liefern?. In DPG Frühjahrstagung, Hamburg (Germany) [Talk] Plenarvortrag, Frühjahrstagung des Arbeitskreises Festkörperphysik 2001, Hamburg, Verhandl. DPG (VI) 36, 1/(2001), 62, 2001.



3. E. Kurtz, M. Schmidt, D. Litvinov, B. Dal Don, R. Dianoux, H. Zhao, H. Kalt, A. Rosenauer, D. Gerthsen, and C. Klingshirn. Correlation in vertically stacked CdSe based quantum islands. In Phys. Stat. Solidi B 229 (1), 519-522, 2001.



4. D. Litvinov, D. Gerthsen, A. Rosenauer, H. Preis, E. Kurtz, and C. Klingshirn. Cd distribution and defects in single and multilayer CdSe/ZnSe quantum dot structures,. In International Conference on Semiconductor Quantum Dots (QD 2000). - 31 July-3 Aug. 2000 Phys. Status Solidi B 224, 147-51, 2001.



5. D. Litvinov, A. Rosenauer, D. Gerthsen, and H. Preis. Cd-Verteilung und Defekte in CdSe/ZnSe Quantenpunktstrukturen,. In DPG Frühjahrstagung, Hamburg (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 2001, Hamburg, Verhandl. DPG (VI) 36, 1/(2001), 158, 2001.



6. V. Potin, E. Hahn, A. Rosenauer, and D. Gerthsen. Determination of indium composition fluctuation in InGaN/GaN quantum wells by quantitative high resolution electron microscopy. In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Inst. Phys. Conf. Ser. 169, 25-28 Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.



7. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Atomic-scale composition analysis of semiconductor quantum dots by transmission electron microscopy,. In 7th International Symposium on Advanced Physical Fields „Fabrication and Characterization of Nanostructured Materialsâ€�, 12-15.11.2001 Tsukuba, 2001.



8. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Compositional analysis based upon electron holography and a chemically sensitive reflection, (invited talk). In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Inst. Phys. Conf. Ser. 169, 33-36 Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.



9. A. Rosenauer, D. Van Dyck, D. Gerthsen, M. Arzberger, G. Böhm, and G. Abstreiter. Structural and chemical investigation of InAs/GaAs nanostructures by transmission electron microscopy,. In International Conference on Semiconductor Quantum Dots (QD 2000). - 31 July-3 Aug. 2000 Phys. Status Solidi B 224, 213-16, 2001.



10. S. Schaefer, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Bartels, and D. Schikora. HRTEM-Untersuchung von CdZnSe/GaAs(100) Inselstrukturen. In DPG Frühjahrstagung, Hamburg (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 2001, Hamburg, Verhandl. DPG (VI) 36, 1/(2001), 180, 2001.



11. M. Schowalter, B. Neubauer, A. Rosenauer, D. Gerthsen, O. Schön, and M. Heuken. MOCVD growth of Ga(Al)N/InGaN/Ga(Al)N-Heterostructures: Influence of the Buffer Layer Al-Concentration an d Growth Duration on the In-Incorporation in InGaN. In MRS spring meeting 2001, San Francisco, 2001.



12. M. Schowalter, P. Pfundstein, B. Neubauer, A. Rosenauer, D. Gerthsen, T. Stephan, H. Kalt, A. Allam, B. Schneller, O. Schön, and M. Heuken. Composition of InGaN:In distribution and influence of lattice strain. In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Inst. Phys. Conf. Ser. 169, 273-276 Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.



13. M. Strassburg, A. Hoffmann, R. Heitz, U. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, D. Schikora, and K. Lischka. High-excitation properties and time-resolved behaviour of three-dimensional CdSe/ZnSe islands. In DPG Frühjahrstagung, Hamburg (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 2001, Hamburg, Verhandl. DPG (VI) 35, 4/(2000), 587, 2001.

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