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Publications of year 2002
Articles in journal or book chapters
  1. Elisabeth Kurtz, B. Dal Don, M. Schmidt, H. Kalt, C. Klingshirn, D. Litvinov, A. Rosenauer, and D. Gerthsen. Self-Organized Semiconductor Quantum Islands in A Semiconducting Matrix. In Baldassare Bartolo, editor, Spectroscopy of Systems with Spatially Confined Structures, volume 90 of NATO Science Series, pages 633--651. Springer Netherlands, 2002.


  2. E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, V. Perez-Solorzano, M. Jetter, and F. Scholz. In-Redistribution in a GaInN Quantum Well upon Thermal Annealing. physica status solidi (b), 234(3):738--741, 2002. Keyword(s): 64.75.+g, 66.30.Xj, 68.37.Lp, 78.55.Cr, 81.05.Ea.


  3. D. Litvinov, A. Rosenauer, D. Gerthsen, P. Kratzert, M. Rabe, and F. Henneberger. Influence of the growth procedure on the Cd distribution in CdSe/ZnSe heterostructures: Stranski--Krastanov versus two-dimensional islands. Applied Physics Letters, 81(4):640--642, 2002. Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor heterojunctions, molecular beam epitaxial growth, semiconductor growth, island structure, interface structure, atomic force microscopy, transmission electron microscopy, chemical interdiffusion.


  4. D. Litvinov, A. Rosenauer, D. Gerthsen, N. N. Ledentsov, D. Bimberg, G. A. Ljubas, V. V. Bolotov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, and I. P. Soshnikov. Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface. Applied Physics Letters, 81(6):1080--1082, 2002. Keyword(s): gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor quantum wires, semiconductor epitaxial layers, semiconductor superlattices, transmission electron microscopy, self-assembly, photoluminescence.


  5. D. Litvinov, A. Rosenauer, D. Gerthsen, and H. Preis. Electron microscopy investigation of the defect configuration in CdSe/ZnSe quantum dot structures. Philosophical Magazine A, 82(7):1361--1380, 2002.


  6. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546--6552, 2002. Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.


  7. V. Potin, A. Rosenauer, D. Gerthsen, B. Kuhn, and F. Scholz. Comparison of the Morphology and In Distribution of Capped and Uncapped InGaN Layers by Transmission Electron Microscopy. physica status solidi (b), 234(3):947--951, 2002. Keyword(s): 68.37.Lp, 68.55.Nq, 68.65.Fg, 81.05.Ea.


Conference articles
  1. M. Efremov, V. Volodin, V.A. Sachkov, V. Preobrazhenskii, B. Semyagin, N. Ledentsov, V. Ustinov, I. Soshnikov, D. Litvinov, A. Rosenauer, and D. Gerthsen. RAMAN study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces. In Microelectron. J. 33, 535-40, 2002.


  2. E. Hahn, Andreas Rosenauer, Dagmar Gerthsen, J. Off, and F. Scholz. In-Verteilung beim MOVPE-Wachstum von GaInN-Quantenfilmen. In DPG Frühjahrstagung, Regensburg (Germany) Verhandl. DPG (VI) 37,1, 195, 2002.


  3. P. Kruse, A. Rosenauer, and D. Gerthsen. Determination of the mean inner potential in III-V semiconductors by electron hologrpahy. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, 2002.


  4. E. Kurtz, B. Dal Don, M. Schmidt, H. Kalt, C. Klingshirn, D. Litvinov, A. Rosenauer, and D. Gerthsen. CdSe quantum islands in ZnSe: a new approach. In Thin Solid Films 412, 89-95, 2002.


  5. D. Litvinov, A. Rosenauer, D. Gerthsen, and H. Preis. Transmission electron microscopy investigation of CdSe/ZnSe quantum dot structures. In Phys. Stat. Solidi B 229 (1), 523-527, 2002.


  6. V. Potin, E. Hahn, M. Schowalter, A. Rosenauer, D. Gerthsen, B. Kuhn, and F. Scholz. Quantitative analysis of the In-distribution in InGaN/GaN-heterostructures. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, 2002.


  7. A. Rosenauer and D. Gerthsen. Composition evaluation of ternary semiconductor nanostructres by lattice fringe analysis. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 195, 2002.


  8. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Compositional analysis of semiconductor nanostructures based on electron holography and a chemically sensitive reflection. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 291, 2002.


  9. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in InGaAs/GaAs quantum dot structrues. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 59, 2002.


  10. Marco Schowalter, Andreas Rosenauer, Dagmar Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Untersuchung der Segregation von In in InAs/AlAs Heterostrukturen. In DPG Frühjahrstagung, Regensburg (Germany) Verhandl. DPG (VI) 37, 1, 163, 2002.


  11. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Influence of growth interruptions on the composition of GaSb/GaAs quantum wells. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 53, 2002.


  12. M. Schowalter, A. Rosenauer, D. Gerthsen, R. Sellin, and D. Bimberg. Segregation in MBE and MOCVD: A comparison. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 113, 2002.



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