1. Meng-Ku Chen, Yung-Chen Cheng, Jiun-Yang Chen, Cheng-Ming Wu, C.C. Yang, Kung-Jen Ma, Jer-Ren Yang, and Andreas Rosenauer. Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells. Journal of Crystal Growth, 279(1-2):55--64, 2005. Keyword(s): A1. Segregation.



2. Yung-Chen Cheng, Cheng-Ming Wu, C. C. Yang, Gang Alan Li, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, and L. C. Chen. Effects of interfacial layers in InGaN/GaN quantum-well structures on their optical and nanostructural properties. Journal of Applied Physics, 98(1):014317, 2005. Keyword(s): indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, nanostructured materials, photoluminescence, electroluminescence, Stark effect.



3. T. Li, E. Hahn, D. Gerthsen, A. Rosenauer, A. Strittmatter, L. Reissmann, and D. Bimberg. Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope. Applied Physics Letters, 86(24):241911, 2005. Keyword(s): indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, electron beam effects, transmission electron microscopy, internal stresses.



4. E. Müller, P. Kruse, D. Gerthsen, M. Schowalter, A. Rosenauer, D. Lamoen, R. Kling, and A. Waag. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography. Applied Physics Letters, 86(15):154108--154108-3, 2005. Keyword(s): II-VI semiconductors, electron holography, nanoparticles, transmission electron microscopy, wide band gap semiconductors, zinc compounds, 4240Lx, 6146+w, 6837Lp.



5. E. Piscopiello, A. Rosenauer, A. Passaseo, E. H. Montoya Rossi, and G. Van Tendeloo. Segregation in In(x)Ga(1-x)As/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition. Philosophical Magazine, 85(32):3857--3870, 2005.



6. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron scattering in strained In(x)Ga(1-x)As. Phys. Rev. B, 72:085326, August 2005. Keyword(s): structure factor, strain, InGaAs, In, Ga, As, first-principles calculation, electron scattering.



7. E. Roventa, G. Alexe, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigations of spatial correlation of CdSe/ZnSe quantum dot stacks grown by molecular beam epitaxy. Journal of Crystal Growth, 278(1-4):316--319, 2005. Note: 13th International Conference on Molecular Beam Epitaxy. Keyword(s): A3. Migration enhanced epitaxy.



8. Th. Schmidt, E. Roventa, T. Clausen, J. I. Flege, G. Alexe, S. Bernstorff, C. Kübel, A. Rosenauer, D. Hommel, and J. Falta. Ordering mechanism of stacked CdSeZnS(x)Se(1-x) quantum dots: A combined reciprocal-space and real-space approach. Phys. Rev. B, 72:195334, November 2005.



9. M. Schowalter, J. T. Titantah, D. Lamoen, and P. Kruse. Ab initio computation of the mean inner Coulomb potential of amorphous carbon structures. Applied Physics Letters, 86(11):112102--112102-3, 2005. Keyword(s): APW calculations, Monte Carlo methods, ab initio calculations, carbon, electron holography, noncrystalline structure, slabs, surface potential, 6143Bn, 6143Er, 6835Bs.



10. V.A. Volodin, M.D. Efremov, R.S. Matvienko, V.V. Preobrazhenskii, B.R. Semyagin, N.N. Ledentsov, I.R. Soshnikov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Dichroism in transmission of light by an array of self-assembled GaAs quantum wires on a nanofaceted A(311) surface. Physics of the Solid State, 47(2):366--369, 2005.

1. M. Beer, K. Engl, J. Zweck, A. Able, M. Wegscheider, M. Schowalter, and A. Rosenauer. Quantative TEM Analysis of the composition of InGaN/AlGaN layers: Selection of the proper imaging conditions. In Presented at Microscopy Conference Davos (2005), 2005.



2. D. Litvinov, D. Gerthsen, A. Rosenauer, T. Passow, M. Grün, C. Klingshirn, and M. Hetterich. In-distribution in InGaAs Quantum Wells and Quantum Islands. In Presented at MCMXIV, Oxford, 2005.



3. E. Müller, P. Kruse, D. Gerthsen, A. Rosenauer, M. Schowalter, D. Lamoen, R. Kling, and A. Waag. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography. In Presented at E-MRS 2005 Spring Meeting Strassbourg (2005), 2005.



4. E. Müller, P. Kruse, D. Gerthsen, A. Rosenauer, M. Schowalter, D. Lamoen, R. Kling, and A. Waag. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography. In Springer Proceedings in Physics 107, 233 (2005), ISBN: 3.540-31914-X, 2005.



5. A. Pretorius, T. Yamaguchi, R. Kroeger, C. Kuebel, D. Hommel, and A. Rosenauer. Investigation of In(x)Ga(1-x)N islands with electron microscopy. In Springer Proceedings in Physics 107, 17 (2005), ISBN: 3.540-31914-X, 2005.



6. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron diffraction in strained In(x)Ga(1-x)As. In Springer Proceedings in Physics 107, 151 (2005), ISBN: 3.540-31914-X, 2005.



7. M. Schowalter, A. Rosenauer, D. Lamoen, P. Kruse, and D. Gerthsen. Ab initio computation of the mean inner coulomb potential of technologically important semiconductors. In Springer Proceedings in Physics 107, 233 (2005), ISBN: 3.540-31914-X, 2005.



8. T. Torunski, O. Rubel, W. Stolz, K. Volz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Annealing Behaviour of N Containing III/V-Semiconductors. In presented at Electronics Materials Conference (EMC) , Santa Barbara (USA), 22.06.-24.06, 2005.

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