1. P. Kruse, M. Schowalter, D. Lamoen, A. Rosenauer, and D. Gerthsen. Determination of the mean inner potential in III-V semiconductors, Si and Ge by density functional theory and electron holography. Ultramicroscopy, 106(2):105--113, 2006. Keyword(s): Mean inner potential.



2. R. Kröger, C. Kruse, C. Roder, D. Hommel, and A. Rosenauer. Relaxation in crack-free AlN/GaN superlattices. physica status solidi (b), 243(7):1533--1536, 2006. Keyword(s): 42.79.Fm, 68.37.Lp, 68.55.Ln, 68.65.Cd, 71.72.Ff, 83.85.St.



3. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in $In_{x}Ga_{1-{}x}As$. Phys. Rev. B, 74(16):165306, October 2006.



4. A. Rosenauer, D. Gerthsen, and V. Potin. Strain state analysis of InGaN/GaN - sources of error and optimized imaging conditions. Phys. Status Solidi A, 203(1):176--184, January 2006. Keyword(s): InGaN/GaN, In, Ga, N, optimised imaging conditions, optimized imaging conditions, aberrations, strain, strain state.



5. M. Schowalter, A. Rosenauer, and D. Gerthsen. Influence of surface segregation on the optical properties of semiconductor quantum wells. Applied Physics Letters, 88(11):111906--111906-3, 2006. Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, photoluminescence, semiconductor quantum wells, surface segregation, 6835Dv, 7855Cr, 7867De.



6. M. Schowalter, A. Rosenauer, D. Lamoen, P. Kruse, and D. Gerthsen. Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold. Applied Physics Letters, 88(23):232108--232108-3, 2006. Keyword(s): APW calculations, II-VI semiconductors, III-V semiconductors, ab initio calculations, aluminium compounds, cadmium compounds, density functional theory, electric potential, gallium compounds, gold, indium compounds, monolayers, wide band gap semiconductors, zinc compounds, 7361Ey, 7361Ga.

1. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission Electron Microscopy Study of In-Segregation and Critical Floating-Layer Content of Indium for Island Formation in InGaAs. In Proceedings of the International Microscopy Conference 16, Sapporo, Japan (2006), 2006.



2. A. Pretorius, M. Schowalter, N. Daneu, R. Kröger, A. Recnik, and A. Rosenauer. Structural analysis of pyramidal defects in Mg-doped GaN. In ICNS-6, August / September 2005, Bremen Phys. stat. sol c, 3 (2006), 1803, 2006.



3. A. Pretorius, M. Siebert, T. Schmidt, R. Kroeger, T. Yamaguchi, D. Hommel, J. Falta, and A. Rosenauer. Indium Concentration Measurements in Nano-Sized InGaN Islands Using High Resolution Transmission Electron Microscopy.. In Proceedings of the 16th International Microscopy Congress, Sapporo, Japan, 1454, 2006, 2006.



4. A. Pretorius, T. Yamaguchi, C. Kuebel, R. Kröger, D. Hommel, and A. Rosenauer. TEM analyses of wurtzite InGaN islands grown by MOVPE and MBE. In ICNS 6, August / September 2005, Bremen Phys. stat. sol c, 3 (2006), 1679-1682, 2006.



5. A. Rosenauer, A. Pretorius, M. Schowalter, K. Müller, T. Yamaguchi, D. Hommel, D. Litvinov, and D. Gerthsen. Composition determination of semiconductor nanostructures. In NVvM - BSM Joint Meeting Lunteren, NL, November 26-28, 2006, 2006.



6. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. Ab initio computation of 002 structure factors for electron scattering in strained InGaAs. In Proceedings of DFTEM, Vienna (2006), 2006.



7. E. Roventa, G. Alexe, M. Schowalter, R. Kroeger, D. Hommel, and A. Rosenauer. Anisotropic Spatial Correlation of CdSe/Zn(S)Se Quantum dot Stacks Grown by MBE. In Presented at 12th International Conference on II-VI Compounds, September 12-16, Warsaw, Poland Phys. Stat. Sol.-C, 3 (2006) 887-890, 2006.



8. M. Schowalter, A. Rosenauer, D. Litvinov, and D. Gerthsen. Investigation of segregation by quantitative transmission electron microscopy. In Optica Applicata 36 (2006) 297-309, 2006.



9. M. Schowalter, A. Rosenauer, J. Titantah, D. Lamoen, P. Kruse, and D. Gerthsen. Computation of the mean inner Coulomb potential of technological important semiconductors, gold and amorphous carbon. In Proceeding of DFTEM, Vienna (2006), page 11, 2006.



10. T. Yamaguchi, S. Einfeldt, S. Gangopadhyay, A. Pretorius, A. Rosenauer, J. Falta, and D. Hommel. Two to three dimensional transitions of InGaN and the impact of GaN overgrowth. In ICNS 6, August / September 2005, Bremen Phys. stat. sol c, 3 (2006), 1396-1399, 2006.

1. Knut Müller. Quantitative Analyse von InGaN-Inseln mittels Hochauflösungs-Transmissionselektronenmikroskopie (Quantitative analysis of InGaN-islands by high-resolution transmission electron microscopy), June 2006.

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