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Publications of year 2007
Articles in journal or book chapters
  1. R. Kroeger, T. Paskova, S. Figge, D. Hommel, and A. Rosenauer. Interfacial structure of a-plane GaN grown on r-plane sapphire. Appl. Phys. Lett., 90:081918, 2007.


  2. Radian Popescu, Erich Müller, Matthias Wanner, Dagmar Gerthsen, Marco Schowalter, Andreas Rosenauer, Artur Böttcher, Daniel Löffler, and Patrick Weis. Increase of the mean inner Coulomb potential in Au clusters induced by surface tension and its implication for electron scattering. Phys. Rev. B, 76(23):235411, December 2007.


  3. Angelika Pretorius, Knut Müller, Roland Kröger, Detlef Hommel, Andreas Rosenauer, and Tomohiro Yamaguchi. Concentration measurement in free-standing InGaN nano-islands with transmission electron microscopy. Microscopy and Microanalysis, 13 (Suppl. 03):312--313, 2007.


  4. EHM Rossi, A. Rosenauer, and G. Van Tendeloo. Influence of strain, specimen orientation and background estimation on composition evaluation of InAs/GaAs by TEM. Philosophical Magazine, 87(29):4461--4473, 2007.


  5. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Bond length variation in Ga(1-x)In(x)As crystals from the Tersoff potential. J. Appl. Phys., 101(12):123508, 2007. Keyword(s): gallium arsenide, indium compounds, III-V semiconductors, ab initio calculations, bond lengths, crystal binding, elastic constants, melting point, band structure.


  6. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Temperature effect on the 002 structure factor of ternary Ga(1-x)In(x)As crystals. Phys. Rev. B, 76(7):073303, August 2007.


  7. K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells. J. Appl. Phys., 102(8):083504, 2007. Keyword(s): annealing, gallium arsenide, gallium compounds, III-V semiconductors, impurity distribution, indium compounds, photoluminescence, Rutherford backscattering, semiconductor epitaxial layers, semiconductor heterojunctions, semiconductor quantum wells, transmission electron microscopy.


Conference articles
  1. R. Kroeger, T. Paskova, A. Rosenauer, D. Hommel, B. Monemar, P. Fini, B. Haskell, J. Speck, and S. Nakamura. On the mechanism of dislocation and stacking fault formation in a-plane GaN films grown by hydride vapor phase epitaxy. In Physics of Semiconductors, 28th International Conference. Vienna, Austria. 24-28 July 2006. AIP-Conference-Proceedings. 2007; 893: 341-2, 2007.


  2. R. Kröger, T. Paskova, D. Hommel, A. Rosenauer, P. Fini, B. Haskell, J. Speck, S. Nakamura, and B. Monemar. Defects in a-plane GaN films on r-plane sapphire. In Springer Proceedings in Physics: MSM(2007), 2007.


  3. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, and M. Hetterich. The role of segregation in InGaAs heteroepitaxy. In Materials Science Forum, 539-543, (2007), 3540, 2007.


  4. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, and M. Hetterich. The role of segregation in InGaAs heteroepitaxy. In presented at THERMEC, Advanced thin films and nanomaterials (2006) Materials Science Forum Vols. 539-543 (2007) 3540-3545, 2007.


  5. R. Popescu, E. Müller, D. Gerthsen, M. Wanner, M. Schowalter, A. Rosenauer, and A. Böttcher. Mean Inner Coulomb Potential of Au Clusters Analyzed by Transmission Electron Holography. In Proceedings of Microscopy and Microanalysis Conference (2007, 2007.


  6. R. Popescu, E. Müller, D. Gerthsen, M. Wanner, M. Schowalter, A. Rosenauer, A. Böttcher, D. Löffler, and P. Weis. Increase of the Mean Inner Coulomb Potential of Au in Au Clusters Induced by Surface Tension. In MC 2007, Saarbrücken, Germany, September 2-7, 2007 Microsc. Microanal. 13 (Suppl. 3), 2007, 138 DOI: 10.1017/S1431927607080695, 2007.


  7. A. Pretorius, T. Yamaguchi, K. Müller, R. Kröger, D. Hommel, and A. Rosenauer. Concentration Measurement In Free-Standing InGaN Nano-Islands With Transmission Electron Microscopy. In MC 2007, Saarbrücken, Germany, September 2-7, 2007 Microsc. Microanal. 13 (Suppl. 3), 2007, 312, 2007.


  8. A. Rosenauer. A Local Absorptive Potential Multislice Approximation to Calculate Intensity Contributions from Thermal Diffuse Scattering in Conventional TEM. In MC 2007, Saarbrücken, Germany, September 2-7, 2007 Microsc. Microanal. 13 (Suppl. 3), 2007, 024 DOI: 10.1017/S1431927607080129, 2007.


  9. Andreas Rosenauer and Marco Schowalter. STEMSIM-a new software tool for simulation of STEM HAADF Z-contrast imaging. In A. G. Cullis and P. A. Midgley, editors, Springer Proceedings in Physics, volume 120, pages 169--172, 2007. Springer.


  10. Andreas Rosenauer, Marco Schowalter, Knut Müller, John Titantah, and Dirk Lamoen. Ab-inito Methods as Tools for Quantitative High-Resolution Transmission Electron Microscopy. In MRS Fall Meeting, Boston (USA) [Invited talk], 2007.


  11. A. Rosenauer, M. Schowalter, K. Müller, J. Titantah, D. Lamoen, P. Kruse, and D. Gerthsen. Ab-inito Methods as Tools for Quantitative High-Resolution Transmission Electron Microscopy. In MRS Autumn Meeting 2008 Symposium C: Quantitative Electron Microscopy for Materials Science SESSION C21: HRTEM and Quantitative Comparison of Experiment and Theory II, 2007.


  12. M. Schowalter, A. Rosenauer, J. Titantah, and D. Lamoen. Calculation of Debye-Waller temperature factors for GaAs. In Springer Proceedings in Physics: MSM(2007), 2007.


  13. M. Schowalter, A. Rosenauer, J. Titantah, and D. Lamoen. Temperature dependence of Debye-Waller Factors of sphalerite III-V Semiconductors calculated from Ab Initio Force Constants. In MC 2007, Saarbrücken, Germany, September 2-7, 2007 Microsc. Microanal. 13 (Suppl. 3), 2007, 128 DOI: 10.1017/S1431927607080646, 2007.


  14. J. T. Titantah, D. Lamoen, M. Schowalter, and Rosenauer. Bond length variations in InGaAs crystals fom Tersoff potential. In Springer Proceedings in Physics: MSM(2007), 2007.


Miscellaneous
  1. Knut Müller. Bestimmung von Strukturfaktoren für Galliumarsenid mittels Elektronenbeugung - Entwicklung und Test einer Messmethode (Determination of structure factors for gallium arsenide by electron diffraction - development and test of a measurement method). Diplomarbeit, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany, September 2007.



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