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Publications of Marco Schowalter
Books and proceedings
  1. M. Schowalter. Segregation in III-V Halbleiterheterostrukturen. Mensch und Buch Verlag, Berlin, 2003. Note: ISBN: 3-89820-559-2.


Articles in journal, book chapters
  1. T. Aschenbrenner, M. Schowalter, T. Mehrtens, K. Müller-Caspary, M. Fikry, D. Heinz, I. Tischer, M. Madel, K. Thonke, D. Hommel, F. Scholz, and A.ahr Rosenauer. Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy. Journal of Applied Physics, 119(17), 2016. [doi:10.1063/1.4948385]


  2. Daniel Carvalho, Knut Müller-Caspary, Marco Schowalter, Tim Grieb, Thorsten Mehrtens, Andreas Rosenauer, Rafael Ben, Teresa Garcìa, Andrés Redondo-Cubero, Katharina Lorenz, Bruno Daudin, and Francisco M. Morales. Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction. Scientific Reports, 6:28459, June 2016. [doi:10.1038/srep28459] Keyword(s): DPC, strain, NBD, SANBED, nano-beam electron diffraction, polarization, polarisation, piezoelectric.


  3. Jochen A. H. Dreyer, Suman Pokhrel, Johannes Birkenstock, Miguel G. Hevia, Marco Schowalter, Andreas Rosenauer, Atsushi Urakawa, Wey Yang Teoh, and Lutz Madler. Decrease of the required dopant concentration for [small delta]-Bi2O3 crystal stabilization through thermal quenching during single-step flame spray pyrolysis. CrystEngComm, 18:2046-2056, 2016. [doi:10.1039/C5CE02430G]


  4. Andrea Kirsch, M. Mangir Murshed, Marco Schowalter, Andreas Rosenauer, and Thorsten M. Gesing. Nanoparticle Precursor into Polycrystalline Bi2Fe4O9: An Evolutionary Investigation of Structural, Morphological, Optical, and Vibrational Properties. The Journal of Physical Chemistry C, 120(33):18831-18840, 2016. [doi:10.1021/acs.jpcc.6b04773]


  5. Florian F. Krause, Marco Schowalter, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Effects of instrument imperfections on quantitative scanning transmission electron microscopy. Ultramicroscopy, 161:146-160, 2016. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.10.026] Keyword(s): TEM.


  6. Knut Müller-Caspary, Florian F. Krause, Tim Grieb, Stefan Löffler, Marco Schowalter, Armand Béché, Vincent Galioit, Dennis Marquardt, Josef Zweck, Peter Schattschneider, Johan Verbeeck, and Andreas Rosenauer. Measurement of atomic electric fields and charge densities from average momentum transfers using scanning transmission electron microscopy. Ultramicroscopy, (in print), 2016. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2016.05.004] Keyword(s): TEM.


  7. Marc Sauerbrey, Jan Höcker, Meikel Wellbrock, Marco Schowalter, Jon-Olaf Krisponeit, Knut Müller-Caspary, Andreas Rosenauer, Gang Wei, Lucio Colombi Ciacchi, Jens Falta, and Jan Ingo Flege. Ultrasmooth Ru(0001) Films as Templates for Ceria Nanoarchitectures. Crystal Growth & Design, 16(8):4216-4224, 2016. [doi:10.1021/acs.cgd.6b00192]


  8. Anda Sulce, Felix Bulke, Marco Schowalter, Andreas Rosenauer, Ralf Dringen, and Sebastian Kunz. Reactive oxygen species (ROS) formation ability and stability of small copper (Cu) nanoparticles (NPs). RSC Adv., 6:76980-76988, 2016. [doi:10.1039/C6RA16599K]


  9. Florian F. Krause, Jan-Philipp Ahl, Darius Tytko, Pyuck-Pa Choi, Ricardo Egoavil, Marco Schowalter, Thorsten Mehrtens, Knut Müller-Caspary, Johan Verbeeck, Dierk Raabe, Joachim Hertkorn, Karl Engl, and Andreas Rosenauer. Homogeneity and composition of AlInGaN: A multiprobe nanostructure study. Ultramicroscopy, 156(0):29-36, 2015. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.04.012] Keyword(s): HAADF STEM.


  10. C. Mahr, K. Müller-Caspary, T. Grieb, M. Schowalter, T. Mehrtens, F.F. Krause, D. Zillmann, and A. Rosenauer. Theoretical study of precision and accuracy of strain analysis by nano-beam electron diffraction. Ultramicroscopy, 158(0):38-48, 2015. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.06.011] Keyword(s): Strain measurement.


  11. Suman Pokhrel, Johannes Birkenstock, Arezoo Dianat, Janina Zimmermann, Marco Schowalter, Andreas Rosenauer, Lucio Colombi Ciacchi, and L. Madler. In situ high temperature X-ray diffraction, transmission electron microscopy and theoretical modeling for the formation of WO3 crystallites. CrystEngComm, 17:6985-6998, 2015. [doi:10.1039/C5CE00526D]


  12. U. Rossow, L. Hoffmann, H. Bremers, E.R. Buss, F. Ketzer, T. Langer, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer. Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells. Journal of Crystal Growth, 414(0):49-55, 2015. Note: Proceedings of the Seventeenth International Conference on Metalorganic Vapor Phase Epitaxy. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2014.11.040] Keyword(s): A1. Surface processes.


  13. Michael Adam, Marcus Bäumer, Marco Schowalter, Johannes Birkenstock, Michaela Wilhelm, and Georg Grathwohl. Generation of Pt- and Pt/Zn-containing ceramers and their structuring as macro/microporous foams. Chemical Engineering Journal, 247(0):205-215, 2014. ISSN: 1385-8947. [WWW] [doi:10.1016/j.cej.2014.02.063] Keyword(s): Polysiloxane.


  14. Tim Grieb, Knut Müller, Emmanuel Cadel, Andreas Beyer, Marco Schowalter, Etienne Talbot, Kerstin Volz, and Andreas Rosenauer. Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM. Microscopy and Microanalysis, 20:1740, 9 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614013051]


  15. Dominik Heinz, Mohamed Fikry, Timo Aschenbrenner, Marco Schowalter, Tobias Meisch, Manfred Madel, Florian Huber, Matthias Hocker, Manuel Frey, Ingo Tischer, Benjamin Neuschl, Thorsten Mehrtens, Knut Müller, Andreas Rosenauer, Detlef Hommel, Klaus Thonke, and Ferdinand Scholz. GaN tubes with coaxial non- and semipolar GaInN quantum wells. Phys. Status Solidi (c), 11:648-651, 2014.


  16. R. R. Juluri, A. Rath, A. Ghosh, A. Bhukta, R. Sathyavathi, D. Narayana Rao, Knut Müller, Marco Schowalter, Kristian Frank, Tim Grieb, Florian Krause, Andreas Rosenauer, and Parlapalli Vencata Satyam. Coherently Embedded Ag Nanostructures in Si: 3D Imaging and their application to SERS. Scientific Reports, 4:4633, April 2014. [doi:10.1038/srep04633]


  17. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Atomic electric fields revealed by a quantum mechanical approach to electron picodiffraction. Nature Communications, 5:5653:1-8, December 2014. [doi:10.1038/ncomms6653] Keyword(s): DPC, STEM, electric field.


  18. A. Rath, J. K. Dash, R. R. Juluri, A. Ghosh, T. Grieb, M. Schowalter, F. F. Krause, K. Müller, A. Rosenauer, and P. V. Satyam. A study of the initial stages of the growth of Au-assisted epitaxial Ge nanowires on a clean Ge(100) surface. CrystEngComm, 16:2486-2490, 2014. [doi:10.1039/C3CE42254B]


  19. Andreas Rosenauer, Florian F. Krause, Knut Müller, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. Phys. Rev. Lett., 113:096101, August 2014. [doi:10.1103/PhysRevLett.113.096101]


  20. Marco Schowalter, Ingo Stoffers, Florian F. Krause, Thorsten Mehrtens, Knut Müller, Malte Fandrich, Timo Aschenbrenner, Detlef Hommel, and Andreas Rosenauer. Influence of Static Atomic Displacements on Composition Quantification of AlGaN/GaN Heterostructures from HAADF-STEM Images. Microscopy and Microanalysis, 20:1463-1470, 10 2014. ISSN: 1435-8115. [doi:10.1017/S1431927614012732]


  21. Olesea Volciuc, Vladimir Sergentu, Ion Tiginyanu, Marco Schowalter, Veaceslav Ursaki, Andreas Rosenauer, Detlef Hommel, and Jürgen Gutowski. Photonic Crystal Structures Based on GaN Ultrathin Membranes. Journal of Nanoelectronics and Optoelectronics, 9(2):271-275, 2014. [WWW] [doi:10.1166/jno.2014.1586] Keyword(s): GAN ULTRATHIN MEMBRANES, NANOSTRUCTURE FABRICATION, PHOTONIC CRYSTALS, THEORY AND DESIGN.


  22. Tim Grieb, Knut Müller, Rafael Fritz, Vincenzo Grillo, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Quantitative chemical evaluation of dilute GaNAs using ADF STEM: Avoiding surface strain induced artifacts. Ultramicroscopy, 129(0):1-9, 2013. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2013.02.006] Keyword(s): Quantitative.


  23. L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, M. Schowalter, T. Mehrtens, A Rosenauer, and A. Hangleiter. Atomics scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content. Applied Physics Letters, 102:102110, 2013. [doi:10.1063/1.4795623]


  24. H. Kauko, T. Grieb, R. Bjørge, M. Schowalter, A.M. Munshi, H. Weman, A. Rosenauer, and A.T.J. van Helvoort. Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM. Micron, 44(0):254-260, 2013. ISSN: 0968-4328. [WWW] [doi:10.1016/j.micron.2012.07.002] Keyword(s): HAADF-STEM.


  25. Florian F. Krause, Knut Müller, Dennis Zillmann, Jacob Jansen, Marco Schowalter, and Andreas Rosenauer. Comparison of intensity and absolute contrast of simulated and experimental high-resolution transmission electron microscopy images for different multislice simulation methods. Ultramicroscopy, 134(0):94-101, 2013. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2013.05.015] Keyword(s): Stobbs factor.


  26. Thorsten Mehrtens, Knut Müller, Marco Schowalter, Dongzhi Hu, Daniel M. Schaadt, and Andreas Rosenauer. Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images. Ultramicroscopy, 131(0):1-9, 2013. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2013.03.018] Keyword(s): HAADF-STEM.


  27. T. Mehrtens, M. Schowalter, D. Tytko, P. Choi, D. Raabe, L. Hoffmann, H. Jönen, U. Rossow, A. Hangleiter, and A. Rosenauer. Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. Applied Physics Letters, 102(13):132112, 2013. [WWW] [doi:10.1063/1.4799382] Keyword(s): gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, quantum well lasers, scanning-transmission electron microscopy, semiconductor quantum wells, wide band gap semiconductors.


  28. T Mehrtens, M Schowalter, D Tytko, P Choi, D Raabe, L Hoffmann, H Jönen, U Rossow, A Hangleiter, and A Rosenauer. Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-contrast. Journal of Physics: Conference Series, 471(1):012009, 2013. [WWW] [doi:10.1088/1742-6596/471/1/012009]


  29. K Müller, H Ryll, I Ordavo, M Schowalter, J Zweck, H Soltau, S Ihle, L Strüder, K Volz, P Potapov, and A Rosenauer. STEM strain analysis at sub-nanometre scale using millisecond frames from a direct electron read-out CCD camera. Journal of Physics: Conference Series, 471(1):012024, 2013. [WWW]


  30. U. Rossow, A. Kruse, H. Jönen, L. Hoffmann, F. Ketzer, T. Langer, R. Buss, H. Bremers, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer. Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region. Journal of Crystal Growth, 370(0):105-108, 2013. ISSN: 0022-0248. [WWW] Keyword(s): A3. Low press. metalorganic vapor phase epitaxy, A3. Quantum wells, A3. Laser epitaxy, B1. Nitrides, B2. Semiconducting III-V materials.


  31. V.C. Srivastava, K.B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, J. Eckert, A. Rosenauer, and H.-W. Zoch. Microstructural characteristics of spray formed and heat treated Al-(Y, La)-Ni-Co system. Journal of Alloys and Compounds, 578:471-480, 2013. ISSN: 0925-8388. [WWW] [doi:10.1016/j.jallcom.2013.06.159] Keyword(s): Spray forming.


  32. M Tewes, F F Krause, K Müller, P Potapov, M Schowalter, T Mehrtens, and A Rosenauer. Quantitative Composition Evaluation from HAADF-STEM in GeSi/Si Heterostructures. Journal of Physics: Conference Series, 471(1):012011, 2013. [WWW]


  33. Timo Daberkow, Fabian Meder, Laura Treccani, Marco Schowalter, Andreas Rosenauer, and Kurosch Rezwan. Fluorescence labeling of colloidal core-shell particles with defined isoelectric points for in vitro studies. Acta Biomaterialia, 8(2):720-727, 2012. ISSN: 1742-7061. [WWW] [doi:10.1016/j.actbio.2011.11.007] Keyword(s): Fluorescence labeling.


  34. Thorsten M. Gesing, Marco Schowalter, Claudia Weidenthaler, M. Mangir Murshed, Gwilherm Nenert, Cecilia B. Mendive, Mariano Curti, Andreas Rosenauer, J.-Christian Buhl, Hartmut Schneider, and Reinhard X. Fischer. Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons. J. Mater. Chem., 22:18814-18823, 2012. [doi:10.1039/C2JM33208F]


  35. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging and improved STEM-HAADF strain state analysis. Ultramicroscopy, 117:15-23, 2012. [WWW] [doi:10.1016/j.ultramic.2012.03.014]


  36. Jens A. Kemmler, Suman Pokhrel, Johannes Birkenstock, Marco Schowalter, Andreas Rosenauer, Nicolae Bârsan, Udo Weimar, and Lutz Mädler. Quenched, nanocrystalline In4Sn3O12 high temperature phase for gas sensing applications. Sensors and Actuators B: Chemical, 161(1):740-747, 2012. ISSN: 0925-4005. [WWW] [doi:10.1016/j.snb.2011.11.026] Keyword(s): Flame spray pyrolysis.


  37. Fabian Meder, Timo Daberkow, Laura Treccani, Michaela Wilhelm, Marco Schowalter, Andreas Rosenauer, Lutz Mädler, and Kurosch Rezwan. Protein adsorption on colloidal alumina particles functionalized with amino, carboxyl, sulfonate and phosphate groups. Acta Biomaterialia, 8(3):1221-1229, 2012. ISSN: 1742-7061. [WWW] [doi:10.1016/j.actbio.2011.09.014] Keyword(s): Surface functionalization.


  38. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy. Microscopy and Microanalysis, 18(05):995-1009, 2012. [doi:10.1017/S1431927612001274]


  39. A. Rath, J. K. Dash, R. R. Juluri, M. Schowalter, K. Müller, A. Rosenauer, and P. V. Satyam. Nano scale phase separation in Au-Ge system on ultra clean Si (100) surfaces. Journal of Applied Physics, 111:104319, 2012. [WWW] [doi:10.1063/1.4721666]


  40. Marco Schowalter, Knut Müller, and Andreas Rosenauer. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III--V and II--VI semiconductors. Acta Crystallographica Section A, 68(1):68-76, January 2012. [doi:10.1107/S010876731103777] Keyword(s): scattering factors, static atomic displacements, modified atomic scattering amplitudes, correction factor.


  41. Marco Schowalter, Andreas Rosenauer, and Kerstin Volz. Parameters for temperature dependence of mean-square displacements for B-, Bi- and Tl-containing binary III-V compounds. Acta Crystallographica Section A, 68(3):319-323, 2012. ISSN: 1600-5724. [doi:10.1107/S0108767312002681] Keyword(s): Debye-Waller factors, mean-square displacements, force constants, phonon density of states, phonon dispersion relations, density functional theory.


  42. Huanjun Zhang, Amir R. Gheisi, Andreas Sternig, Knut Müller, Marco Schowalter, Andreas Rosenauer, Oliver Diwald, and Lutz Mädler. Bulk and Surface Excitons in Alloyed and Phase-Separated ZnO-MgO Particulate Systems. ACS Applied Materials & Interfaces, 4(5):2490-2497, 2012. [doi:10.1021/am300184b]


  43. T. Aschenbrenner, G. Kunert, W. Freund, C. Kruse, S. Figge, M. Schowalter, C. Vogt, J. Kalden, K. Sebald, A. Rosenauer, J. Gutowski, and D. Hommel. Catalyst free self-organized grown high-quality GaN nanorods. physica status solidi (b), 248(8):1787-1799, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147148] Keyword(s): MBE, MOVPE, nanorods, nitrides, TEM, III-V semiconductors.


  44. Heiko Dartsch, Christian Tessarek, Timo Aschenbrenner, Stephan Figge, Carsten Kruse, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity. Journal of Crystal Growth, 320(1):28-31, 2011. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2010.12.008] Keyword(s): A1. Electroluminescence.


  45. J. K. Dash, A. Rath, R. R. Juluri, P. Santhana Raman, K. Müller, M. Schowalter, R. Imlau, A. Rosenauer, and P. V. Satyam. Shape transformation of SiGe structures on ultra clean Si(5 5 7) and Si(5 5 12) surfaces. Journal of Physics: Conference Series, 326(1):012021, 2011. [WWW]


  46. Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Gerd Kunert, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. A structural investigation of highly ordered catalyst- and mask-free GaN nanorods. Nanotechnology, 22(2):025603, 2011. [WWW]


  47. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging. Journal of Physics: Conference Series, 326(1):012033, 2011. [WWW]


  48. Robert Imlau, Knut Müller, Oleg Rubel, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing. Journal of Physics: Conference Series, 326(1):012038, 2011. [WWW]


  49. Carsten Kruse, Wojciech Pacuski, Tomasz Jakubczyk, Jakub Kobak, Jan A Gaj, Kristian Frank, Marco Schowalter, Andreas Rosenauer, Matthias Florian, Frank Jahnke, and Detlef Hommel. Monolithic ZnTe-based pillar microcavities containing CdTe quantum dots. Nanotechnology, 22(28):285204, 2011. [WWW]


  50. G Kunert, W Freund, T Aschenbrenner, C Kruse, S Figge, M Schowalter, A Rosenauer, J Kalden, K Sebald, J Gutowski, M Feneberg, I Tischer, K Fujan, K Thonke, and D Hommel. Light-emitting diode based on mask-Â and catalyst-free grown N-polar GaN nanorods. Nanotechnology, 22(26):265202, 2011. [WWW]


  51. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S A Gerstl, Pyuck-Pa Choi, Dierk Raabe, and Andreas Rosenauer. A (S)TEM and atom probe tomography study of InGaN. Journal of Physics: Conference Series, 326(1):012029, 2011. ISSN: 1742-6596. [WWW]


  52. Knut Müller, Marco Schowalter, Andreas Rosenauer, Dongzhi Hu, Daniel M. Schaadt, Michael Hetterich, Philippe Gilet, Oleg Rubel, Rafael Fritz, and Kerstin Volz. Atomic scale annealing effects on InGaNAs studied by TEM three-beam imaging. Physical Review B, 84(4):045316, July 2011. [doi:10.1103/PhysRevB.84.045316]


  53. K. Müller, M. Schowalter, O. Rubel, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, R. Fritz, K. Volz, and A. Rosenauer. TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells. Journal of Physics: Conference Series, 326(1):012026, 2011. [WWW]


  54. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Stephanie Bley, Parlapalli Venkata Satyam, Adrian Avramescu, Karl Engl, and Stephan Lutgen. 2D-composition mapping in InGaN without electron beam induced clustering of indium by STEM HAADF Z-contrast imaging. Journal of Physics: Conference Series, 326(1):012040, 2011. [WWW]


  55. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Parlapalli Venkata Satyam, Stephanie Bley, Christian Tessarek, Detlef Hommel, Katrin Sebald, Moritz Seyfried, Jürgen Gutowski, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Composition mapping in InGaN by scanning transmission electron microscopy. Ultramicroscopy, 111:1316-1327, 2011. ISSN: 0304-3991. [WWW] Keyword(s): Quantitative STEM, Composition determination, Multislice simulation, Frozen lattice simulation.


  56. Jianping Xiao, Agnieszka Kuc, Suman Pokhrel, Marco Schowalter, Satyam Parlapalli, Andreas Rosenauer, Thomas Frauenheim, Lutz Mädler, Lars G. M. Pettersson, and Thomas Heine. Evidence for Fe2+ in Wurtzite Coordination: Iron Doping Stabilizes ZnO Nanoparticles. Small, 7(20):2879-2886, 2011. ISSN: 1613--6829. [doi:10.1002/smll.201100963] Keyword(s): density functional theory, doping, iron, nanoparticles, zinc oxide.


  57. Saji George, Suman Pokhrel, Tian Xia, Benjamin Gilbert, Zhaoxia Ji, Marco Schowalter, Andreas Rosenauer, Robert Damoiseaux, Kenneth A. Bradley, Lutz Mädler, and André E. Nel. Use of a Rapid Cytotoxicity Screening Approach To Engineer a Safer Zinc Oxide Nanoparticle through Iron Doping. ACS Nano, 4(1):15-29, 2010. Note: PMID: 20043640. [doi:10.1021/nn901503q]


  58. Thorsten M. Gesing, Marco Schowalter, Claudia Weidenthaler, Andreas Rosenauer, Hartmut Schneider, and Reinhard X. Fischer. Mullite-type (Bi${\sb 1{$-$\it x}}$Sr${\sb {\it x}} ){\sb 2}$Al${\sb 4}$O${\sb 9{$-$\it x}/2}$: HT-XRPD, TEM and XPS investigations. Acta Crystallographica Section A, 66(a1):s182-s183, September 2010. [doi:10.1107/S0108767310095887]


  59. Knut Müller, Marco Schowalter, Andreas Rosenauer, Jacob Jansen, Kenji Tsuda, John Titantah, and Dirk Lamoen. Refinement of chemically sensitive structure factors using parallel and convergent beam electron nanodiffraction. Journal of Physics: Conference Series, 209(1):012025, 2010. [WWW] [doi:10.1088/1742-6596/209/1/012025]


  60. Knut Müller, Marco Schowalter, Andreas Rosenauer, Oleg Rubel, and Kerstin Volz. Effect of bonding and static atomic displacements on composition quantification in InGaNAs. Phys. Rev. B, 81(7):075315, February 2010. [doi:10.1103/PhysRevB.81.075315]


  61. Suman Pokhrel, Johannes Birkenstock, Marco Schowalter, Andreas Rosenauer, and Lutz Mädler. Growth of Ultrafine Single Crystalline WO3 Nanoparticles Using Flame Spray Pyrolysis. Crystal Growth & Design, 10(2):632-639, 2010. [doi:10.1021/cg9010423]


  62. Andreas Rosenauer, Katharina Gries, Knut Müller, Marco Schowalter, Angelika Pretorius, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Measurement of composition profiles in III-nitrides by quantitative scanning transmission electron microscopy. Journal of Physics: Conference Series, 209(1):012009, 2010. [WWW] [doi:10.1088/1742-6596/209/1/012009]


  63. A. Schaefer, A. Sandell, L.E. Walle, V. Zielasek, M. Schowalter, A. Rosenauer, and M. Bäumer. Chemistry of thin film formation and stability during praseodymium oxide deposition on Si(111) under oxygen-deficient conditions. Surface Science, 604(15–16):1287-1293, 2010. ISSN: 0039-6028. [WWW] [doi:10.1016/j.susc.2010.04.016] Keyword(s): Praseodymium oxide.


  64. V.C. Srivastava, K.B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, J. Eckert, A. Rosenauer, and H.-W. Zoch. Microstructure and mechanical properties of partially amorphous Al85Y8Ni5Co2 plate produced by spray forming. Materials Science and Engineering: A, 527(10–11):2747-2758, 2010. ISSN: 0921-5093. [WWW] [doi:10.1016/j.msea.2010.01.057] Keyword(s): Spray deposition.


  65. B. Butz, R. Schneider, D. Gerthsen, M Schowalter, and A. Rosenauer. Decomposition of 8.5 mol. Y2O3-doped zirconia and its contribution to the degradation of ionic conductivity. Acta Materialia, 57:5480-5490, 2009.


  66. Katharina Gries, Roland Kröger, Christian Kübel, Marco Schowalter, Monika Fritz, and Andreas Rosenauer. Correlation of the orientation of stacked aragonite platelets in nacre and their connection via mineral bridges. Ultramicroscopy, 109(3):230-236, 2009. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2008.10.023] Keyword(s): Nacre.


  67. Knut Müller, Marco Schowalter, Jacob Jansen, Kenji Tsuda, John Titantah, Dirk Lamoen, and Andreas Rosenauer. Refinement of the 200 structure factor for GaAs using parallel and convergent beam electron nanodiffraction data. Ultramicroscopy, 109:802-814, 2009. [doi:10.1016/j.ultramic.2009.03.029] Keyword(s): GaAs, Structure factor refinement, Bonding, Parallel beam electron diffraction, Convergent beam electron diffraction.


  68. Andreas Rosenauer, Katharina Gries, Knut Müller, Angelika Pretorius, Marco Schowalter, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Measurement of specimen thickness and composition in AlGaN/GaN using high-angle annular dark field images. Ultramicroscopy, 109(9):1171-1182, 2009. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2009.05.003] Keyword(s): Quantitative STEM Z-contrast imaging.


  69. A. Schaefer, V. Zielasek, Th. Schmidt, A. Sandell, M. Schowalter, O. Seifarth, L. E. Walle, Ch. Schulz, J. Wollschläger, T. Schroeder, A. Rosenauer, J. Falta, and M. Bäumer. Growth of praseodymium oxide on Si(111) under oxygen-deficient conditions. Phys. Rev. B, 80:045414, July 2009. [doi:10.1103/PhysRevB.80.045414]


  70. M. Schowalter, A. Rosenauer, J. T. Titantah, and D. Lamoen. Computation and parametrization of the temperature dependence of Debye-Waller factors for group IV, III-V and II-VI semiconductors. Acta Crystallogr., Sect. A, 65(1):5-17, January 2009. [doi:10.1107/S0108767308031437] Keyword(s): Debye-Waller factors, semiconductors, force constants, phonon densities of states.


  71. M. Schowalter, A. Rosenauer, J. T. Titantah, and D. Lamoen. Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure. Acta Crystallogr., Sect. A, 65(3):227-231, May 2009. [doi:10.1107/S0108767309004966]


  72. V. C. Srivastava, K. B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, A. Rosenauer, H.-W. Zoch, and J. Eckert. Spray forming of Bulk Al85Y8Ni5Co2 with co-existing amorphous, nano- and micro-crystalline Structures. Transactions of the Indian In, 62:331-5, 2009.


  73. J. T. Titantah, D. Amoen, M. Schowalter, and A. Rosenauer. Density-functional theory calculation of the electron energy-loss near-edge structure of Li-Intercalated graphite. Carbon, 47:2501-2510, 2009.


  74. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga$_{1-x}$In$_x$As/GaAs quantum wells. J. Appl. Phys., 105(8):084310, 2009. [WWW] [doi:10.1063/1.3115407] Keyword(s): arsenic compounds, density functional theory, gallium arsenide, gallium compounds, III-V semiconductors, indium compounds, lattice constants, Monte Carlo methods, nanostructured materials, semiconductor heterojunctions, semiconductor quantum wells.


  75. T. Aschenbrenner, S. Figge, M. Schowalter, A. Rosenauer, and D. Hommel. Photoluminescence and structural analysis of a-plane InGaN layers. Journal of Crystal Growth, 310(23):4992-4995, 2008. Note: The Fourteenth International conference on Metalorganic Vapor Phase Epitax The 14th International conference on Metalorganic Vapor Phase Epitax. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2008.08.014] Keyword(s): A1. X-ray diffraction.


  76. Birte Jürgens, Holger Borchert, Kirsten Ahrenstorf, Patrick Sonström, Angelika Pretorius, Marco Schowalter, Katharina Gries, Volkmar Zielasek, Andreas Rosenauer, Horst Weller, and Marcus Bäumer. Colloidally Prepared Nanoparticles for the Synthesis of Structurally Well-Defined and Highly Active Heterogeneous Catalysts. Angewandte Chemie International Edition, 47(46):8946-8949, 2008. ISSN: 1521-3773. [doi:10.1002/anie.200802188] Keyword(s): colloids, heterogeneous catalysis, nanoparticles, oxidation, supported catalysts.


  77. D. Litvinov, M. Schowalter, A. Rosenauer, B. Daniel, J. Fallert, W. Löffler, H. Kalt, and M. Hetterich. Determination of critical thickness for defect formation of CdSe/ZnSe heterostructures by transmission electron microscopy and photoluminescence spectroscopy. physica status solidi (a), 205(12):2892-2897, 2008. ISSN: 1862-6319. [doi:10.1002/pssa.200824151] Keyword(s): 68.37.Lp, 68.37.Og, 68.55.ag, 68.65.Fg, 78.55.Et.


  78. Andreas Rosenauer, Marco Schowalter, John T. Titantah, and Dirk Lamoen. An emission-potential multislice approximation to simulate thermal diffuse scattering in high-resolution transmission electron microscopy. Ultramicroscopy, 108(12):1504-1513, 2008. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2008.04.002] Keyword(s): Thermal diffuse scattering.


  79. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Size effects and strain state of Ga(1-x)In(x)As/GaAs multiple quantum wells: Monte Carlo study. Phys. Rev. B, 78:165326, October 2008. [doi:10.1103/PhysRevB.78.165326]


  80. Radian Popescu, Erich Müller, Matthias Wanner, Dagmar Gerthsen, Marco Schowalter, Andreas Rosenauer, Artur Böttcher, Daniel Löffler, and Patrick Weis. Increase of the mean inner Coulomb potential in Au clusters induced by surface tension and its implication for electron scattering. Phys. Rev. B, 76(23):235411, December 2007. [doi:10.1103/PhysRevB.76.235411]


  81. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Bond length variation in Ga(1-x)In(x)As crystals from the Tersoff potential. J. Appl. Phys., 101(12):123508, 2007. [WWW] [doi:10.1063/1.2748338] Keyword(s): gallium arsenide, indium compounds, III-V semiconductors, ab initio calculations, bond lengths, crystal binding, elastic constants, melting point, band structure.


  82. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Temperature effect on the 002 structure factor of ternary Ga(1-x)In(x)As crystals. Phys. Rev. B, 76(7):073303, August 2007. [doi:10.1103/PhysRevB.76.073303]


  83. K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells. J. Appl. Phys., 102(8):083504, 2007. [WWW] [doi:10.1063/1.2794739] Keyword(s): annealing, gallium arsenide, gallium compounds, III-V semiconductors, impurity distribution, indium compounds, photoluminescence, Rutherford backscattering, semiconductor epitaxial layers, semiconductor heterojunctions, semiconductor quantum wells, transmission electron microscopy.


  84. P. Kruse, M. Schowalter, D. Lamoen, A. Rosenauer, and D. Gerthsen. Determination of the mean inner potential in III-V semiconductors, Si and Ge by density functional theory and electron holography. Ultramicroscopy, 106(2):105-113, 2006. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2005.06.057] Keyword(s): Mean inner potential.


  85. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in $In_{x}Ga_{1-{}x}As$. Phys. Rev. B, 74(16):165306, October 2006. [doi:10.1103/PhysRevB.74.165306]


  86. M. Schowalter, A. Rosenauer, and D. Gerthsen. Influence of surface segregation on the optical properties of semiconductor quantum wells. Applied Physics Letters, 88(11):111906-111906-3, 2006. ISSN: 0003-6951. [doi:10.1063/1.2184907] Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, photoluminescence, semiconductor quantum wells, surface segregation, 6835Dv, 7855Cr, 7867De.


  87. M. Schowalter, A. Rosenauer, D. Lamoen, P. Kruse, and D. Gerthsen. Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold. Applied Physics Letters, 88(23):232108-232108-3, 2006. ISSN: 0003-6951. [doi:10.1063/1.2210453] Keyword(s): APW calculations, II-VI semiconductors, III-V semiconductors, ab initio calculations, aluminium compounds, cadmium compounds, density functional theory, electric potential, gallium compounds, gold, indium compounds, monolayers, wide band gap semiconductors, zinc compounds, 7361Ey, 7361Ga.


  88. E. Müller, P. Kruse, D. Gerthsen, M. Schowalter, A. Rosenauer, D. Lamoen, R. Kling, and A. Waag. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography. Applied Physics Letters, 86(15):154108-154108-3, 2005. ISSN: 0003-6951. [doi:10.1063/1.1901820] Keyword(s): II-VI semiconductors, electron holography, nanoparticles, transmission electron microscopy, wide band gap semiconductors, zinc compounds, 4240Lx, 6146+w, 6837Lp.


  89. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron scattering in strained In(x)Ga(1-x)As. Phys. Rev. B, 72:085326, August 2005. [doi:10.1103/PhysRevB.72.085326] Keyword(s): structure factor, strain, InGaAs, In, Ga, As, first-principles calculation, electron scattering.


  90. M. Schowalter, J. T. Titantah, D. Lamoen, and P. Kruse. Ab initio computation of the mean inner Coulomb potential of amorphous carbon structures. Applied Physics Letters, 86(11):112102-112102-3, 2005. ISSN: 0003-6951. [doi:10.1063/1.1885171] Keyword(s): APW calculations, Monte Carlo methods, ab initio calculations, carbon, electron holography, noncrystalline structure, slabs, surface potential, 6143Bn, 6143Er, 6835Bs.


  91. D. Litvinov, M. Schowalter, A. Rosenauer, D. Gerthsen, T. Passow, H. Heinke, and D. Hommel. Influence of the cap layer growth temperature on the Cd distribution in CdSe/ZnSe heterostructures. Journal of Crystal Growth, 263(1-4):348-352, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.11.073] Keyword(s): A1. Desorption.


  92. M. Schowalter, D. Lamoen, A. Rosenauer, P. Kruse, and D. Gerthsen. First-principles calculations of the mean inner Coulomb potential for sphalerite type II-VI semiconductors. Appl. Phys. Lett., 85(21):4938-4940, November 2004. [doi:10.1063/1.1823598] Keyword(s): mip, sphalerite, semiconductor, mean inner Coulomb potential.


  93. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668-1683, 2003. ISSN: 1610-1642. [doi:10.1002/pssc.200303129] Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.


  94. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 83(15):3123-3125, October 2003. Keyword(s): growth, GaSb, Ga, Sb, GaAs, Ga, As, quantum wells, quantum well,.


  95. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Investigation of In segregation in InAs/AlAs quantum-well structures. Appl. Phys. Lett., 79(26):4426-4428, December 2001. Keyword(s): segregation, InAs, In, As, InAs/AlAs, AlAs, Al, As, quantum-well.


Conference articles
  1. A. Kirsch, M.M. Murshed, M. Schowalter, M. Curti, C.B. Mendive, and T. M. Gesing. Comparative band gap determinatio of photocatalytic active Bi2Fe4O9. In DGK 2016 conference in Stuttgart, Germany, 2016.


  2. F. F. Krause, A. Rosenauer, M. Schowalter, K. Müller-Caspary, T. Mehrtens, A. Beche, K.W.H. van den Bos, S. Van Aert, J. Verbeeck, and D. Van Dyck. Increased Resolution with the ISTEM mode (Talk). In Treffen des Arbeitskreises Hochauflösung (AKHREM) 2016, Berlin (D), 2016.


  3. Florian F. Krause, Marco Schowalter, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Measurement of Diffraction Pattern Distortions for Quantitative STEM (Poster). In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.


  4. Florian F. Krause, Marco Schowalter, Thorsten Mehrtens, Knut Müller-Caspary, Armand Beche, Karel W. H. van den Bos, Sandra Van Aert, Johan Verbeeck, and Andreas Rosenauer. ISTEM: A Realisation of Incoherent Imaging for Ultra-High Resolution TEM beyond the Classical Information Limit (Talk). In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.


  5. C. Mahr, K. Müller-Caspary, T. Grieb, F. F. Krause, M. Schowalter, A. Lackmann, A. Wittstock, and A. Rosenauer. Measurement of strain in nanoporous gold using nano-beam electron diffraction. In European Microscopy Congress 2016 (EMC 2016), Lyon (F), [Poster IM06-352], 2016.


  6. Knut Müller-Caspary, Florian F. Krause, Armand Béché, Martial Duchamp, Tim Grieb, Marco Schowalter, Stefan Löffler, Oliver Oppermann, Vadim Migunov, Florian Winkler, Heike Soltau, Lothar Strüder, Josef Zweck, Peter Schattschneider, Rafal Dunin-Borkowski, Johan Verbeeck, and Andreas Rosenauer. Momentum-resolved STEM: Measurement of atomic electric fields and angular multi-range analysis [Invited talk]. In The XXXVII Annual Meeting of the Electron Microscopy Society of India - International Conference on Electron Microscopy, 2016. Keyword(s): DPC, iris, picodiffraction, electric fields, ARSTEM.


  7. Knut Müller-Caspary, Florian F. Krause, Armand Béché, Martial Duchamp, Marco Schowalter, Stefan Löffler, Vadim Migunov, Florian Winkler, Martin Huth, Robert Ritz, Sebastian Ihle, Martin Simson, Henning Ryll, Heike Soltau, Lothar Strüder, Josef Zweck, Peter Schattschneider, Rafal Dunin-Borkowski, Johan Verbeeck, and Andreas Rosenauer. Measurement of Atomic Electric Fields by Scanning Transmission Electron Microscopy (STEM) Employing Ultrafast Detectors. In Microscopy and Microanalysis 2016, Columbus (OH/USA), [Invited Talk], volume 22, pages 484-485, July 24-28th 2016. Microscopy Society of America. [WWW] [doi:10.1017/S1431927616003275] Keyword(s): DPC, pnccd.


  8. Knut Müller-Caspary, Thorsten Mehrtens, Marco Schowalter, Tim Grieb, Andreas Rosenauer, Florian F. Krause, Christoph Mahr, and Pavel Potapov. ImageEval. A software for the processing, evaluation and acquisition of (S)TEM images. In European Microscopy Congress 2016, Lyon (F), [Poster IM03-286], 2016. [doi:10.1002/EMC2016.0677]


  9. K. Müller-Caspary, O. Oppermann, T. Grieb, A. Rosenauer, F. F. Krause, M. Schowalter, T. Mehrtens, P. Potapov, A. Beyer, and K. Volz. Angle-resolved scanning transmission electron microscopy employing an iris aperture (Poster). In Electron Microscopy and Analysis Group Annual Conference (EMAG 2016), Durham (UK), 2016.


  10. Knut Müller-Caspary, Oliver Oppermann, Tim Grieb, Andreas Rosenauer, Marco Schowalter, Florian F. Krause, Thorsten Mehrtens, Pavel Potapov, Andreas Beyer, and Kerstin Volz. Angle-resolved Scanning Transmission Electron Microscopy (ARSTEM) for materials analysis. In European Microscopy Congress 2016, Lyon (F), [Poster IM06-350], 2016. [doi:10.1002/EMC2016.0259]


  11. A. Rosenauer, K. Müller-Caspary, M. Schowalter, T. Grieb, F. F. Krause, T. Mehrtens, A. Beche, J. Verbeeck, V. Galioit, J. Zweck, Stefan Löffler, and Peter Schattschneider. Quantitative STEM - From composition to atomic electric fields (Invited Talk). In Electron Microscopy and Analysis Group Annual Conference (EMAG 2016), Durham (UK), 2016.


  12. Andreas Rosenauer, Knut Müller-Caspary, Marco Schowalter, Tim Grieb, Florian F. Krause, Thorsten Mehrtens, Armand Beche, Johan Verbeeck, Josef Zweck, Stefan Löffler, Peter Schattschneider, Marcus Müller, Peter Veit, Sebastian Metzner, Frank Bertram, Tilman Schimpke, Martin Strassburg, and Rafal Dunin-Borkowski. Quantitative STEM -- From composition to atomic electric fields [Invited Talk]. In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.


  13. Marco Schowalter, Beeke Geerken, Florian Fritz Krause, Tim Grieb, Knut Müller-Caspary, Christoph Mahr, Thorsten Mehrtens, Andreas Rosenauer, and Sandra Van Aert. Atom-counting in a non-probe corrected STEM (Poster). In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.


  14. M. Schowalter, F. F. Krause, T. Grieb, K. Müller-Caspary, T. Mehrtens, and A. Rosenauer. Effects of instrument imperfections on quantitative scanning transmission electron Microscopy (Poster). In Electron Microscopy and Analysis Group Annual Conference (EMAG 2016), Durham (UK), 2016.


  15. T. Grieb, D. Carvalho, K. Müller-Caspary, M. Schowalter, C. Mahr, A. Beyer, A. Hyra, T. Ben, F. M. Morales, R. Garcia, K. Volz, B. Daudin, and A. Rosenauer. Quantitative nano-beam electron diffraction: Measuring strain and electric fields. In Microscopy Conference MC 2015, Göttingen (D), Session IM 2 [Talk], September 6-11th 2015.


  16. Florian F. Krause, Jan-Philipp Ahl, Darius Tytko, Pyuck-Pa Choi, Ricardo Egoavil, Marco Schowalter, Thorsten Mehrtens, Knut Müller-Caspary, Johan Verbeeck, Dierk Raabe, Joachim Hertkorn, Karl Engl, and Andreas Rosenauer. Homogeneity and Composition of MOVPE-Grown AlInGaN: A Nanostructure Multiprobe Study (Poster). In Proceedings of the Microscopy Conference 2015 (MC 2015), Göttingen (D), September 6-11th 2015.


  17. F F Krause, A Rosenauer, Müller K., M Schowalter, and T Mehrtens. Imaging STEM: A novel method for microscopy of semiconductors at ultra-high spatial resolution and precision (Talk). In Proceedings of Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK), volume Session 4b (Wed, April 1st), 2015.


  18. Florian Fritz Krause, Andreas Rosenauer, Knut Müller-Caspary, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. In Frontiers of Electron Microscopy in Materials Science (FEMMS) 2015, Lake Tahoe (CA/USA), [Invited Talk], September 13-18th 2015.


  19. F. F. Krause, A. Rosenauer, M. Schowalter, K. Müller-Caspary, and T. Mehrtens. ISTEM: A novel incoherent imaging mode for ultra-high resolution beyond the classical information limit (Talk). In Proceedings of the Microscopy Conference 2015 (MC 2015), Göttingen (D), September 6-11th 2015.


  20. Florian F. Krause, M. Schowalter, J.P. Ahl, J. Hertkorn, R. Egoavil, d. Tytko, P. P. Choi, T. Mehrtens, K. Müller-Caspary, D. Raabe, J. Verbeeck, K. Engl, and A. Rosenauer. Homogeneity and composition of MOVPE grown AlInGaN: a multiprobe nanostructure study. In Proceedings of Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK), 2015.


  21. A. Krisch, M. M. Murshed, M. Schowalter, P. Gaczynski, K.-D. Becker, and T.M. Gesing. Nanoparticle precursor into polycrystalline Be2Fe4O9: structural, morphological and optical properties. In Proceedings of the NDDK2015 conference (talk), 2015.


  22. C. Mahr, K. Müller, M. Schowalter, T. Mehrtens, T. Grieb, F.F. Krause, D. Erben, and A. Rosenauer. Analysis and improvement of precision and accuracy of strain measurements by convergent nano-beam electron diffraction (SANBED). In Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK) [Talk], volume Session 3b, Tue, March 31st, 2015.


  23. C. Mahr, K. Müller-Caspary, T. Grieb, T. Mehrtens, M. Schowalter, F. F. Krause, D. Zillmann, and A. Rosenauer. Theoretical study of precision and accuracy of strain analysis by nano-beam electron diffraction (SANBED). In Microscopy Conference MC 2015, Göttingen (D), session MS 2, [Poster MS2.P023], September 6-11th 2015.


  24. Thorsten Mehrtens, Marco Schowalter, Jakob Borchardt, Max Grimme, Knut Müller-Caspary, Lars Hoffmann, H. Jönen, U. Rossow, A. Hangleiter, and Andreas Rosenauer. Temperature dependence of HAADF intensity: Influence of disorder. In Microscopy Conference MC 2015, Göttingen (D), session IM 2, [Poster IM2.P049], September 6-11th 2015.


  25. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. A quantum mechanical approach to electron picodiffraction reveals atomic electric fields. In Materials Research Society Spring Meeting 2015 (MRS 2015), San Francisco (USA) [Talk], volume Symposium ZZ, Talk 2.02, 2015.


  26. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields. In Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK) [Talk], volume Session 4b (Wed, April 1st), 2015.


  27. K. Müller-Caspary, F. F. Krause, A. Béché, M. Schowalter, V. Galioit, S. L[öffler, J. Verbeeck, J. Zweck, P. Schattschneider, and A. Rosenauer. Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields. In Microscopy Conference MC 2015, Göttingen (D), session IM 5, [Talk], September 6-11th 2015.


  28. Knut Müller-Caspary, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Oliver Oppermann, Tim Grieb, Andreas Oelsner, Pavel Potapov, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields. In Frontiers of Electron Microscopy in Materials Science (FEMMS) 2015, Lake Tahoe (CA/USA), [Invited Talk], September 13-18th 2015.


  29. Andreas Rosenauer, Florian F. Krause, Knut Müller, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. In Materials Research Society Spring Meeting 2015 (MRS 2015), San Francisco (USA) [Talk], volume Symposium ZZ, Talk 2.02, 2015.


  30. A. Rosenauer, K. Müller-Caspary, M. Schowalter, T. Grieb, F. F. Krause, and T. Mehrtens. Analysis of composition and strain in semiconductor nanostructures by quantitative STEM using HAADF intensity, angular multi-range analysis and imaging STEM. In Microscopy Conference MC 2015, Göttingen (D), Session MS 2 [Invited Talk], September 6-11th 2015.


  31. A. Rosenauer, K. Müller-Caspary, M. Schowalter, T. Grieb, F.F. Krause, T. Mehrtens, A. Béché, J. Verbeeck, V. Galioit, J. Zweck, Stefan Löffler, and Peter Schattschneider. Quantitative STEM. In Proceedings of the International Workshop on Advanced and In-situ Microscopies of Functional Nanomaterials and Devices 2015 (IAMNANO 2015) [Invited Talk], Hamburg (D), 2015.


  32. Marco Schowalter, Florian F. Krause, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Effects of Instrument Imperfections on Quantitative Scanning Transmission Electron Microscopy (Poster. In Proceedings of the Microscopy Conference 2015 (MC 2015), Göttingen (D), September 6-11th 2015.


  33. Marco Schowalter, Florian F. Krause, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Investigation of detector characteristics for quantification of HAADF-STEM images (Poster). In Proceedings of Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK), 2015.


  34. M. Schowalter, A. Rosenauer, K. Müller-Caspary, T. Grieb, and T. Mehrtens. Quantitative STEM. In EAgLE workshop on high-resolution transmission electron microscopy - from sample preparation to interpretation, 21.-25. September 2015, Warsaw, Poland (invited talk), 2015.


  35. Josef Zweck, Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Peter Schattschneider, and Andreas Rosenauer. Exploring the space between atoms: Interatomic electric fields imaged by STEM-DPC. In Multinational Congress on Microscopy (MCM) 2015, Eger (Hungary) [Invited talk], 2015.


  36. F. F. Krause, Müller K., D. Zillmann, J. Jansen, M. Schowalter, and A. Rosenauer. Comparison of intensity and absolute contrast of simulated and experimental high-resolution transmission electron microscopy images for different multislice simulation methods (Poster). In Proceedings of the 18th International Microscopy Congress (IMC), Prag (CZ), 2014.


  37. C. Mahr, K. Müller, D. Erben, M. Schowalter, J. Zweck, K. Volz, and A. Rosenauer. Strain Analysis by Nano-Beam Electron Diffraction (SANBED) in semiconductor nanostructures. In 18th International Microscopy Congress (IMC) [Poster IT-9-P-3029], 2014.


  38. Thorsten Mehrtens, Marco Schowalter, Darius Tytko, Pyuck-Pa Choi, Dierk Raabe, Lars Hoffmann, Holger Jönen, Uwe Rossow, Andreas Hangleiter, and Andreas Rosenauer. Temperature dependence of Z-contrast in InGaN. In 18th International Microscopy Congress (IMC), Prague (Czech Republic) [Poster presentation], 2014.


  39. K. Müller, H. Ryll, I. Ordavo, S. Ihle, M. Huth, M. Simson, J. Zweck, K. Volz, H. Soltau, P. Potapov, L. Strüder, M. Schowalter, C. Mahr, D. Erben, and A. Rosenauer. Strain Analyisis by Nano-Beam Electron Diffraction using millisecond frames of a direct electron pnCCD detector. In 18th International Microscopy Congress (IMC) [Talk MS-8-O-3268], 2014.


  40. Knut Müller, Henning Ryll, Ivan Ordavo, Sebastian Ihle, Martin Huth, Martin Simson, Josef Zweck, Kerstin Volz, Heike Soltau, Andreas Rosenauer, Pavel Potapov, Marco Schowalter, Lothar Strüder, Christoph Mahr, and Daniel Erben. Strain Analysis from Nano-beam Electron Diffraction Patterns Recorded on Direct Electron Charge-coupled Devices. In Microscience Microscopy Congress, MMC 2014, Manchester (UK), July, 2014 [invited talk PS3.1.4], 2014.


  41. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Lars Hoffmann, Andreas Hangleiter, Pyuck-Pa Choi, and Dierk Raabe. Measurement of the indium concentration in high-indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. In SPIE Photonics West OPTO, San Francisco (USA) [Invited Talk], 2014.


  42. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Moritz Tewes, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Pyuck-Pa Choi, Dierk Raabe, and Pavel Potapov. Measurement of Composition with Quantitative STEM. In EMSI-2014, Delhi (India) [Invited Talk], 2014.


  43. U. Rossow, L. Hoffmann, H. Bremers, R. Buss, F. Ketzer, T. Langer, T. Mehrtens, M. Schowalter, A. Rosenauer, and A. Hangleiter. Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells. In ICMOVPE XVII, Lausanne (Switzerland) [Poster presenation], 2014.


  44. I.V. Rozhdestvenskaya, M. Czank, M. Schowalter, E. Mugnaioli, and W. Depmeier. New data of denisovite and the model of the structure according to HAADF images. In Abstracts of XVIII International conference „Crystalchemistry, XRPD and spectroscopy of minerals“ (2014), Ekaterinburg, 160-161. (in Russian), 2014.


  45. M. Schowalter, F. Krause, T. Grieb, T. Mehrtens, K. Müller, and A. Rosenauer. Position resolved single electron response of the HAADF-STEM detector and improved method for intensity normalisation. In 18th International Microscopy Congress (IMC) [Talk IT-2-O-3292], 2014.


  46. Marco Schowalter, Thorsten Mehrtens, Jokob Borchard, Max Grimme, Knut Müller, and Andreas Rosenauer. Influence of disorder on the temperature dependence of the HAADF intensity. In EMSI-2014, Delhi (India) [Talk], 2014.


  47. Tim Grieb, Knut Müller, Emanuel Cadel, Rafael Fritz, Nils Neugebohrn, Etienne Talbot, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Chemical composition analysis of dilute GaNAs and InGaNAs by high-angle annular dark field STEM. In International Conference on Electron Microscopy and XXIV Annual Meeting of the Electron Microscope Society of India (EMSI) 2013, Kolkata (India) [Talk], 2013.


  48. T. Grieb, K. Müller, E. Cadel, R. Fritz, E. Talbot, M. Schowalter, K. Volz, and A. Rosenauer. Determination of In and N concentration in (InGa)(NAs) quantum wells using HAADF STEM and investigation of annealing effects. In Proceedings of the Microscopy Conference 2013 (MC 2013, Regensburg) Germany [Poster], volume 1: Instrumentation and Methods, pages IM.1.P024, 2013.


  49. T. Grieb, K. Müller, R. Fritz, V. Grillo, M. Schowalter, K. Volz, and A. Rosenauer. Avoiding surface strain field induced artifacts in 2d chemical mapping of dilute GaNAs quantum wells by HAADF STEM. In Proceedings of the Microscopy Conference 2013 (MC 2013, Regensburg) Germany [Poster], volume 1: Instrumentation and Methods, pages IM.1.P008, 2013.


  50. Dominik Heinz, Mohamed Fikry, Timo Aschenbrenner, Marco Schowalter, Tobias Meisch, Manfred Madel, Florian Huber, Matthias Hocker, Ingo Tischer, Thorsten Mehrtens, Knut Müller, Manuel Frey, Julian Jakob, Benjamin Neuschl, Detlef Hommel, Andreas Rosenauer, Klaus Thonke, and Ferdinand Scholz. Ga(In)N micro- and nanostructures for optical gas sensing. In Statusworkshop Kompetenznetz Funktionelle Nanostrukturen [Poster], 2013.


  51. L. Hoffmann, Uwe Rossow, Heiko Bremers, R. Buss, F. Ketzer, T. Langer, T. Mehrtens, M. Schowalter, A Rosenauer, and A. Hangleiter. Indium incorporation into thin and ultrathin InGaN layers with high indium content for long wavelength applications. In 15th European Workshop on Metalorganic Vapour Phase Epitaxy (EWMOVPE XV), 2013.


  52. Florian F. Krause, Knut Müller, Dennis Zillmann, Jacob Jansen, Marco Schowalter, and Andreas Rosenauer. Comparison of intensity and absolute contrast of simulated and experimental high-resolution transmission electron microscopy images for different multislice simulation methods (Poster). In Proceedings of the Microscopy Conference 2013 (MC 2013), Regensburg (D), volume 1: Instrumentation and Methods, pages IM.1.P022, 2013.


  53. Thorsten Mehrtens, Marco Schowalter, Darius Tytko, Pyuck-Pa Choi, Dierk Raabe, Lars Hoffmann, Holger Jönen, Uwe Rossow, Andreas Hangleiter, and Andreas Rosenauer. Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-Contrast. In Microscopy of Semiconducting Materials 2013 (MSM XVIII),Oxford (UK) [Talk], 2013.


  54. Knut Müller, Henning Ryll, Ivan Ordavo, Marco Schowalter, Josef Zweck, Heike Soltau, Sebastian Ihle, Lothar Strüder, Kerstin Volz, Pavel Potapov, and Andreas Rosenauer. STEM strain analysis at sub-nanometre scale using millisecond frames of a direct electron read-out CCD camera. In Microscopy of Semiconducting Materials 2013 (MSM XVIII),Oxford (UK) [Talk], volume G: Scanning Electron and Ion Beam Techniques, 2013.


  55. K. Müller, H. Ryll, I. Ordavo, D. Zillmann, M. Schowalter, J. Zweck, H. Soltau, S. Ihle, L. Strüder, K. Volz, P. Potapov, and A. Rosenauer. Strain Analysis by Nano-Beam Electron Diffraction (SANBED): Present performance and future prospects. In Proceedings of the Microscopy Conference 2013 (MC 2013, Regensburg) Germany [Talk], volume 1: Instrumentation and Methods, pages IM.1.004, 2013.


  56. M. Qi, W. A. O'Brien, C. A. Stephenson, V. Patel, N. Cao, B. J. Thibeault, T. Kosel, M. Schowalter, A. Rosenauer, V. Protasenko, H. Xing, and M. A. Wistey. Stability study of highly tensile strained Ge for optical device appliations. In Conf. Proceeding. 55th electronic material conference (EMC 2013), 2013.


  57. A. Rosenauer, K. Müller, T. Mehrtens, M. Schowalter, A. Würfel, T. Aschenbrenner, C. Kruse, D. Hommel, L. Hoffmann, A. Hangleiter, Pyuck-Pa Choi, and D. Raabe. Quantitative Methods in TEM and STEM. In , 2013.


  58. Marco Schowalter, Ingo Stoffers, Florian Krause, Thorsten Mehrtens, Knut Müller, Malte Fandrich, Timo Aschenbrenner, Detlef Hommel, and Andreas Rosenauer. Composition determination using HAADF-STEM in AlGaN/GaN heterostructures revisited. In Microscopy Conference 2013 (MC 2013, Regensburg) [Poster Presentation], volume 1: Instrumentation and Methods, pages IM.1.P028, 2013.


  59. Ingo Stoffers, Marco Schowalter, Florian Krause, Thorsten Mehrtens, Knut Müller, Malte Fandrich, Timo Aschenbrenner, Detlef Hommel, and Andreas Rosenauer. Composition quantification from HAADF-STEM in AlGaN/GaN heterostructures revisited. In Microscopy of Semiconducting Materials 2013 (MSMX VIII),Oxford (UK) [Poster Presentation], 2013.


  60. Moritz Tewes, Florian Krause, Knut Müller, Pavel Potapov, Marco Schowalter, Thorsten Mehrtens, and Andreas Rosenauer. Quantitative Composition Evaluation from HAADF-STEM in GeSi/Si Heterostructures. In Microscopy of Semiconducting Materials 2013 (MSM XVIII),Oxford (UK) [Talk], 2013.


  61. T. M. Gesing, M. Schowalter, C. Weidenthaler, M. M. Murshed, A. Rosenauer, J.C. Buhl, H. Schneider, and R. X. Schneider. Mullite-type dibismuth nonaoxometallates-(III): the effect of Strontium doping. In European crystallographic meeting, July 29 - September 11, 2012 Bergen, Norway, 2012.


  62. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A method to avoid strain field induced artifacts in 2D chemical mapping of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis [Talk 595], volume 18, pages 1028-1029, 2012. [doi:10.1017/S143192761200699X]


  63. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A new method for true 2d chemical mapping: strain-field unaffected evaluation of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis (M&M) conference 2012, Phoenix (USA) [Poster], 2012.


  64. Tim Grieb, Knut Müller, Andreas Hyra, Rafael Fritz, Marco Schowalter, Nicolai Knaub, and Andreas Rosenauer. Chemical analysis of InGaNAs quantum wells using HAADF STEM. In EMC 2012 [Poster], Session PS1.2: Thin films, Coatings and Interface, Manchester (UK), 2012. [WWW]


  65. Lars Hoffmann, Heiko Bremers, Holger Jönen, Uwe Rossow, Thorsten Mehrtens, Marco Schowalter, Andreas Rosenauer, and Andreas Hangleiter. STEM and XRD investigations of ultra thin GaInN/GaN quantum wells with high indium content. In Verhandlungen der DPG, number HL 64.6, pages 240, 2012.


  66. L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, T. Mehrtens, M. Schowalter, A. Rosenauer, and A. Hangleiter. STEM and XRD investigations of ultra-thin GaInN/GaN quantum wells with high indium content. In International Workshop on Nitride Semiconductors 2012 [Talk], 2012.


  67. T. Mehrtens, M. Schowalter, D. Tytko, P.-P. Choi, D. Raabe, L. Hoffmann, A. Hangleiter, and A. Rosenauer. Temperature dependence of Z-Contrast for InGaN. In Microscopy & Microanalysis, Phoenix (USA) [Talk], 2012.


  68. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain analysis by nano-beam electron diffraction (SANBED) in semiconductor nanostructures [Invited talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, pages 36, 2012. Keyword(s): SANBED.


  69. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor nanostructures by convergent electron nanoprobe diffraction [Talk]. In Verhandlungen der Deutschen Physikalischen Gesellschaft, volume 47, pages 312, 2012.


  70. A. Rosenauer, K. Mller, T. Mehrtens, M. Schowalter, A. Würfel, T. Aschenbrenner, C. Kruse, D. Hommel, L. Hoffmann, A. Hangleiter, P.-P. Choi, and D. Raabe. Measurement of composition in InGaN nanostructures using scanning transmission electron microscopy. In International Workshop on Nitride Semiconductors 2012, Sapporo (Japan) [Invited Talk], 2012.


  71. A. Rosenauer, K. Müller, T. Mehrtens, M. Schowalter, T. Aschenbrenner, C. Kruse, D. Hommel, K. Sebald, and J. Gutowski. TEM investigation of InGaN quantum dots. In First German-Korean Symposium on Nano-optics and Nano-technology, Hanse-Wissenschaftskolleg, Delmenhorst, (Germany) December 14, 2012, [Invited talk], 2012.


  72. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Rafael Fritz, and Kerstin Volz. Measurement of Composition and Strain by Scanning Transmission Electron Microscopy. In Microscopy and Microanalysis, Phoenix (USA) [Invited talk], 2012.


  73. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Alexander Würfel, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Lars Hoffmann, Andreas Hangleiter, S. A. Gerstl, Pyuck-Pa Choi, and Dirk Raabe. Measurement of composition and strain in InGaN quantum dots by STEM [Plenary talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, EMSI2012, Bengaluru (Indien), July 4, 2012 [invited talk], pages 25, 2012.


  74. A. Rosenauer, K. Müller, T. Mehrtens, M. Schowalter, J. Zweck, R. Fritz, and K. Volz. Measurement of Composition and Strain by STEM. In International Conference on Extended Defects in Semiconductors, EDS 2012, Thessaloniki (Greece) [Invited Talk], 2012.


  75. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Measurement of composition and strain by STEM. In Microscopy and Microanalysis 2012 (M&M2012), Phoenix, Arizona, July 29-August 2 [Invited talk], volume 18, pages 1804-1805, 2012. [doi:10.1017/S1431927612010872]


  76. Uwe Rossow, Andreas Kruse, Holger Jönen, Lars Hoffmann, Fedor Ketzer, Torsten Langer, Ronald Buss, Heiko Bremers, Andreas Hangleiter, Thorsten Mehrtens, Marco Schowalter, and Andreas Rosenauer. Optimizing the Growth Process of the Active Zone in GaN Based Laser Structures for the Long Wavelength Region. In ICMOVPE - XVI [Talk], 2012.


  77. Heiko Dartsch, Christian Tessarek, Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. Electroluminescence from InGaN quantum dots in a monolithically grown GaN/AlInN cavity. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.


  78. S. Figge, H. Dartsch, C. Tessarek, T. Aschenbrenner, C. Kruse, D. Hommel, K. Sebald, M. Seyfried, J. Kalden, J. Gutowski, M. Schowalter, K. Müller, A. Rosenauer, M. Florian, and F. Jahnke. Enhancing the Collection-Efficiency of InGaN Quantum Dots in Single Photon Emitters. In poster PC1.17 ICNS 9 Glasgow, U.K. 2011, [Poster], volume PC1.17, 2011.


  79. R. Fritz, A. Beyer, W. Stolz, O. Rubel, T. Grieb, K. Müller, M. Schowalter, A. Rosenauer, I. Häusler, A. Mogilatenko, H. Kirmse, W. Neumann, and K. Volz. HAADF-STEM in a JEOL 2200FS for quantitative analysis of composition in compound III/V semiconductor materials. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel), volume 1: Instrumentation and Methods, pages IM2.P130, 2011. DGE - German Society for Electron Microscopy.


  80. Rafael Fritz, Andreas Beyer, Wolfgang Stolz, Kerstin Volz, Knut Müller, Marco Schowalter, Andreas Rosenauer, Ines Häusler, Anna Mogilatenko, Holm Kirmse, and Wolfgang Neumann. Quantitative analysis of chemical composition using HAADF -STEM in a JEOL 2200FS. In Microscopy of semiconducting materials, Cambridge (UK) [Talk], 2011.


  81. T. M. Gesing, M. Schowalter, C. Weidenthaler, M. M. Murshed, A. Rosenauer, J.C. Buhl, H. Schneider, and R. X. Schneider. Strontium incorporation in Mullite-type Bi2M4O8. In Presented at IUCR conference in Madrid, 2011.


  82. T. Grieb, K. Müller, O. Rubel, R. Fritz, C. Gloistein, N. Neugebohrn, M. Schowalter, K. Volz, and A. Rosenauer. Determination of Nitrogen concentration in dilute GaNAs by STEM HAADF Z-contrast imaging. In MSM 2011 Cambridge, U.K. [talk] talk D13, 2011.


  83. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of nitrogen concentration in dilute GaNAs by STEM HAADF Z-contrast imaging. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.


  84. T. Grieb, K. Müller, O. Rubel, R. Fritz, M. Schowalter, K. Volz, and A. Rosenauer. STEM strain state analysis in combination with HAADF intensity evaluation to determine chemical composition of GaNAs quantum wells. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel), volume 1: Instrumentation and Methods, pages IM2.P120, 2011. DGE - German Society for Electron Microscopy.


  85. L. Hoffmann, H. Bremer, H. Jönen, U. Rossow, J. Thalmair, J. Zweck, M. Schowalter, A. Rosenauer, and A. Hangleiter. Strain Relaxation Mechanisms in Green Emitting GaInN/GaN Laser Diode Structures. In ICNS 9 Glasgow, U.K., 2011 [talk] talk B4.3, 2011.


  86. Lars Hoffmann, Heiko Bremers, Holger Joenen, Uwe Rossow, Johannes Thalmair, Josef Zweck, Marco Schowalter, Andreas Rosenauer, and Andreas Hangleiter. Strain Relaxation Mechanisms in Green Emitting GaInN/GaN Laser Diode Structures. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.


  87. Robert Imlau, Knut Müller, Marco Schowalter, Rafael Fritz, Kerstin Volz, and Andreas Rosenauer. Untersuchung struktureller und optischer Eigenschaften von getemperten InGaNAs-Trögen mittels TEM-Dreistrahlabbildung. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.


  88. R. Imlau, K. Müller, M. Schowalter, O. Rubel, R. Fritz, K. Volz, and A. Rosenauer. Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing. In MSM 2011 Cambridge, U. K. [poster] poster 2.16, 2011.


  89. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S. A. Gerstl, Pyuck-Pa Choi, Dierk Raabe, Adrian Avramescu, and Andreas Rosenauer. A (S)TEM and Atom Probe Tomography Study of InGaN. In DPG Frühjahrstagung, Dresden (Germany) [Talk], number 62.3, 2011.


  90. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S. A. Gerstl, Pyuck-Pa Choi, Dierk Raabe, Adrian Avramescu, and Andreas Rosenauer. A (S)TEM and atom probe tomography study for InGaN. In MSM 2011 Cambridge, U.K. [talk] talk D7, 2011.


  91. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S. A. Gerstl, Pyuck-Pa Choi, Dierk Raabe, Adrian Avramescu, and Andreas Rosenauer. Determination of composition in InGaN/GaN heterostructures using (S)TEM, Atom Probe Tomography and Photoluminescence. In E-MRS Spring Meeting 2011, Nice (France) [Talk], 2011.


  92. K. Müller, T. Grieb, O. Rubel, M. Schowalter, R. Fritz, D. Z. Hu, D. Schaadt, M. Hetterich, K. Volz, and A. Rosenauer. Conventional and Scanning TEM of InGaNAs: Comparison of theory and experiment. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel) Germany [poster] Best poster award, volume 1: Instrumentation and Methods, pages IM2.P132, 2011. DGE - German Society for Electron Microscopy.


  93. Knut Müller, Marco Schowalter, Andreas Rosenauer, Dongzhi M. Hu, Daniel Schaadt, Michael Hetterich, Philippe Gilet, Oleg Rubel, Rafael Fritz, and Kerstin Volz. Annealing in InGaNAs studied by TEM three-beam imaging. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.


  94. K. Müller, M. Schowalter, O. Rubel, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, R. Fritz, K. Volz, and A. Rosenauer. TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells. In MSM 2011 Cambridge, U. K. [Talk] talk B4, 2011.


  95. A Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, S. Bley, P. V. Satyam, A. Avramescu, K. Engl, and S. Lutgen. 2D-composition mapping in InGaN without electron beam induced clustering of indium by STEM HAADF Z-contrast imaging. In MSM 2011 Cambridge, U.K. [poster] poster 2.18, 2011.


  96. A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, S. Bley, P. V. Satyam, A. Avramescu, K. Engl, and S. Lutgen. Composition mapping in InGaN using HAADF STEM imaging. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel), volume 1: Instrumentation and Methods, pages IM2.P113, 2011. DGE - German Society for Electron Microscopy.


  97. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Stephanie Bley, Parlapalli Vencata Satyam, Christian Tessarek, Detlef Hommel, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Quantitative STEM: Composition mapping in InGaN. In DPG Frühjahrstagung, Dresden (Germany) [Invited talk], 2011.


  98. A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, P. V. Satyam, S. Bley, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, J. Gutowski, S. S. A. Gerstl, P. P. Choi, and D. Raabe. Composition mapping in InGaN with quantitative STEM Z-contrast imaging. In ICNS Glasgow 2011 [Invited talk], 2011.


  99. A. Rosenauer, K. Müller, and M. Schowalter. STEMSIM-a software tool for simulation of STEM ADF Z-contrast imaging. In invited talk in the Workshop W4 Simulation for TEM and STEM MC 2011, Kiel, Germany [invited talk], 2011.


  100. P.V. Satyam, J. K. Dash, A. Rath, R. R. Juluri, P. Santhana Raman, K. Müller, M. Schowalter, R. Imlau, and A. Rosenauer. Shape transformation of SiGe structures on ultra clean Si (5 5 7) and Si(5 5 12) surfaces. In MSM 2011 Cambridge, U.K. [poster] poster P2.2, volume P2.2, 2011.


  101. P. V. Satyam, A. Rosenauer, J. Dash, A. Rath, J. Raghava, M. Schowalter, Tim Grieb, K. M�ller, T. Mehrtens, and Robert Imlau. Compositional analysis of nanostructures with STEM Z-contrast imaging. In EM50, Hyderabad (India) [Talk], 2011.


  102. M. Schowalter, J. Fischer, A. Rosenauer, and R.E. Dunin-Borkowski. A theoretical assessment of the reported increase in the mean inner potential of Au clusters with decreasing particle size. In poster IM2.P129 MC 2011, Kiel, Germany [poster], 2011.


  103. M. Schowalter, K. Müller, and A. Rosenauer. Density Functional Theory simulations for quantitative transmission electron microscopy. In CECAM-HQ-EPFL workshop 2011, Lausanne, Switzerland [invited talk], 2011.


  104. M. Schowalter, M. Tewes, K. Frank, R. Imlau, A. Rosenauer, H.S. Lee, O.G. Rastelli, M. Schmidt, M. Tavast, T. Leinonen, and M. Guina. Investigation of diffusion in AlAs/GaAs distributed Bragg reflectors using HAADF STEM imaging. In MSM 2011 Cambridge, U.K. [poster] poster P2.12, 2011.


  105. K. Volz, R. Fritz, A. Beyer, W. Stolz, K. Müller, M. Schowalter, A. Rosenauer, I. Haeusler, A. Mogilatenko, H. Kirmse, and W. Neumann. Quantitative analysis of chemical composition using HAADF-STEM in a JEOL 2200FS. In talk D11 MSM 2011 Cambridge, U.K. [talk], 2011.


  106. T. Aschenbrenner, G. Kunert, W. Freund, S. Figge, C. Kruse, M. Schowalter, C. Vogt, A. Rosenauer, J. Kalden, K. Sebald, J. Gutowski, and D Hommel. High quality GaN nanorods: from catalyst free growth to an LED. In presented at IWN 2010, 2010.


  107. Kristian Frank, Marco Schowalter, Andreas Rosenauer, Wojciech Pacuski, Carsten Kruse, and Detlef Hommel. Quantitative Untersuchung von ZnTe-basierten optoelektronischen Heterostrukturen mittels Transmissionselektronenmikroskopie. In DPG Frühjahrstagung in Regensburg, 2010.


  108. Rafael Fritz, Andreas Beyer, Oleg Rubel, Wolfgang Stolz, Kerstin Volz, Knut Müller, Marco Schowalter, Andreas Rosenauer, Ines Häusler, Anna Mogilatenko, Holm Kirmse, and Wolfgang Neumann. Quantitative analysis of chemical composition in Ga(AsP)-heterostructures using HAADF-STEM in a JEOL 2200FS. In International Microscopy Congress (IMC17) Rio de Janeiro (Brazil) [Poster presentation], 2010.


  109. T. M. Gesing, M. Schowalter, C. Weidenthaler, A. Rosenauer, H. Schneider, and R.X. Fischer. Synthesis and properties of Mullite-type Bi(1-x)Sr(x)2M1 4OM2 9-x/2 (M=Al, Ga,Fe). In presented at BMEA, Taiwan (2010), 2010.


  110. Claas Gloistein, Knut Müller, Marco Schowalter, Andreas Rosenauer, and Jacob Jansen. Computation and measurement of atomic mean square displacements for quantitative evaluation of high angle annular dark field images. In International Conference on Advances in Electron Microscopy and Related Techniques/XXXI Annual Meeting of EMSI, Mumbai (India) [Invited talk], 2010.


  111. Thorsten Mehrtens, Marco Schowalter, Knut Müller, Dongzhi Hu, Daniel M. Schaadt, and Andreas Rosenauer. Measuring of segregation profiles from HAADF -STEM images. In International Microscopy Congress (IMC17), Rio de Janeiro (Brazil) [Poster presentation], 2010.


  112. K. Müller, M. Schowalter, A. Rosenauer, J. Jansen, K. Tsuda, J. Titantah, and D. Lamoen. Refinement of chemically sensitive structure factors using parallel and convergent beam electron nanodiffraction. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012025, 2010.


  113. Knut Müller, Marco Schowalter, Oleg Rubel, Kerstin Volz, Michael Hetterich, Dongzhi Hu, Daniel Schaadt, and Andreas Rosenauer. Dual compositional mapping in InGaNAs using a single TEM lattice fringe image. In International Microscopy Congress (IMC17), Rio de Janeiro (Brazil) [Poster presentation], 2010.


  114. S. Pokhrel, K. Grossmann, J. Birkenstock, J.I. Flege, J. Falta, M. Schowalter, A. Rosenauer, N. Barsan, U. Weimar, and L. Mädler. Aerosol made Sn doped In2O3 (ITO) nanoparticles for gas sensing application. In presented at IAC conference (2010), 2010.


  115. A. Rosenauer, K. Gries, K. Müller, M. Schowalter, A. Pretorius, A. Avramescu, K. Engl, and S. Lütgen. Measurement of Composition Profiles in III-Nitrides by Quantitative Scanning Transmission Electron Microscopy. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012009, 2010.


  116. Andreas Rosenauer, Thorsten Mehrtens, Stephanie Bley, Knut Müller, Katharina Gries, Marco Schowalter, Christian Tessarek, Detlef Hommel, Kathrin Sebald, Moritz Seyfried, and Jürgen Gutowski. Composition mapping in InGaN quantum wells and quantum dots using high resolution STEM imaging. In International Microscopy Congress (IMC17), Rio de Janeiro (Brazil) [Poster presentation], 2010.


  117. Andreas Rosenauer, Knut Müller, Katharina Gries, Marco Schowalter, Angelika Pretorius, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Towards Quantitative Scanning Transmission Electron Microscopy: Measurement of Composition in III Nitrides. In International Conference on Advances in Electron Microscopy and Related Techniques/XXXI Annual Meeting of EMSI, Mumbai (India) [Invited talk], 2010.


  118. M. Schowalter, T. Aschenbrenner, C. Kruse, D. Hommel, and A. Rosenauer. TEM characterization of catalyst- and mask-free grown GaN nanorods. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012020, 2010.


  119. Marco Schowalter, Thorsten Mehrtens, and Andreas Rosenauer. The effect of strain on mean square displacement in wurtzite InGaN. In International Microscopy Congress (IMC17), Rio de Janeiro (Brazil) [Poster presentation], 2010.


  120. J. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Ab initio based atomic scattering amplitudes and 002 electron structure factor of GaInAs/GaAs quantum wells. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012040, 2010.


  121. Timo Aschenbrenner, Gerd Kunert, Carsten Kruse, Stephan Figge, Joachim Kalden, Kathrin Sebald, Knut Müller, Marco Schowalter, Jürgen Gutowski, Andreas Rosenauer, and Detlef Hommel. Catalyst- and mask-free grown GaN nanocolumns. In E-MRS Fall Meeting 2009, Warsaw (Poland) [Invited talk], 2009.


  122. B. Butz, R. Schneider, D. Gerthsen, M. Schowalter, and A. Rosenauer. Chemical instability as reason for degradation of ionic conductivity in 8.5 mol% Y03-doped ZrO. In W. Grogger, F. Hofer, and P. Pölt, editors, MC2009, Graz (Austria) Vol. 3: Materials science, pages 201-302, 2009.


  123. Thorsten Mehrtens, Knut Müller, Marco Schowalter, Nils Neugebohrn, Andreas Rosenauer, Dongzhi Hu, and Daniel Schaadt. Towards a quantitative concentration analysis in InGaAs-heterostructures using HAADF-STEM. In G. Kothleitner and M. Leisch, editors, MC2009, Graz (Austria) Vol. 1: Instrumentation and Methodology, pages 219-220, 2009.


  124. Thorsten Mehrtens, Marco Schowalter, Knut Müller, Andreas Rosenauer, Dongzhi Hu, and Daniel Schaadt. Analysis of segregation profiles in InGaAs quantum wells via TEM and STEM. In Verhandlungen der DPG, number HL 1.6, 2009.


  125. Knut Müller, Marco Schowalter, Andreas Rosenauer, Jacob Jansen, Kenji Tsuda, John Titantah, and Dirk Lamoen. Measurement of structure factors by parallel and convergent beam electron nanodiffraction. In G. Kothleitner and M. Leisch, editors, MC2009, Vol. 1: Instrumentation and Methodology [Poster], pages 293-294, 2009.


  126. Knut Müller, Marco Schowalter, Andreas Rosenauer, Wolfgang Stolz, and Kerstin Volz. Simultaneous measurement of In and N concentration maps and profiles in InGaNAs from a single TEM lattice fringe image. In W. Grogger, F. Hofer, and P. Pölt, editors, MC2009, Graz (Austria) Vol. 3: Materials science, pages 45-46, 2009.


  127. S. Pokhrel, M. Schowalter, A. Rosenauer, and L. Mädler. New precursors leading to single crystalline WO3 nanospheres. In presented at AICHE annual meeting (2009), 2009.


  128. A. Rosenauer, M. Schowalter, A. Pretorius, A. Avramescu, K. Engl, and S. Lutgen. Quantitative measurement of composition profiles at interfaces in semiconductor nanostructures by HRSTEM. In PSI2009, Puri, India, February 2009, 2009.


  129. Marco Schowalter, Thorsten Mehrtens, Kristian Frank, Knut Müller, and Andreas Rosenauer. Analysis of semiconductor interfaces and surface segregation using the composition evaluation by lattice fringe analyis (CELFA) method. In Physics at surfaces and Interfaces (PSI), Puri (India) [Talk], 2009.


  130. V. Srivastava, K.B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, J. Eckert, A. Rosenauer, and H.-W. Zoch. Novel microstructural characteristics and properties of spray formed Al-RE-TM based alloys. In Proceedings of the 4th International conference on spray deposition and melt atomization SDMA2009 and 7th international conference on spray forming ICSF7 held at University of Bremen during September 07-09, 2009, 2009.


  131. John T. Titantah, Dirk Lamoen, Marco Schowalter, Andreas Rosenauer, and Knut Müller. Ab initio based atomic scattering amplitudes and 002 electron structure factor of GaInAsN / GaAs quantum wells. In 32nd International Symposium on Dynamical Properties of Solids, Antwerp (Belgium) [Poster presentation], September 2009.


  132. T. Aschenbrenner, S. Figge, D. Hommel, M. Schowalter, and A. Rosenauer. MOVPE-growth of a-plane InGaN quantum wells on GaN buffer layers on r-plane sapphire substrates. In IC-MOVPE, 1.-6. June 2008, 2008.


  133. M. Monville, S. Bonnany, M. Schowalter, C. Birgot, B. Lombardet, and C. Belouet. Proceedings of Carbon conference. In , 2008.


  134. Knut Müller, Marco Schowalter, Andreas Rosenauer, Jacob Jansen, John Titantah, and Dirk Lamoen. Measurement of 002 structure factors for GaAs from electron spot diffraction patterns. In Verhandlungen der DPG [Talk], number HL 33.2, pages 376, 2008.


  135. Knut Müller, Marco Schowalter, Andreas Rosenauer, Dirk Lamoen, John Titantah, Jacob Jansen, and Kenji Tsuda. Measurement of GaAs structure factors from the diffraction of parallel and convergent electron nanoprobes. In M. Luysberg, K. Tillmann, and T. Weirich, editors, EMC 2008, Vol. 1: Instrumentation and methods [Poster], pages 215-216, 2008. [doi:10.1007/978-3-540-85156-1_108]


  136. Knut Müller, Marco Schowalter, Andreas Rosenauer, John Titantah, Dirk Lamoen, Jacob Jansen, and Kenji Tsuda. Measurement of 002 structure factors for GaAs using parallel and convergent beam electron diffraction. In Meeting of the Arbeitskreises Hochauflösende Elektronenmikroskopie der Deutschen Gesellschaft für Elektronenmikroskopie, Bremen [Vortrag (Talk)], 2008.


  137. A. Rosenauer, M. Schowalter, J. Titantah, and D. Lamoen. A novel emission potential multislice method to calculate intensity contributions for thermal diffuse scattering in plane wave illumination TEM. In M. Luysberg, K. Tillmann, T. Weirich (Eds.): EMC 2008, Vol. 1: Instrumentation and Methods, pp. 147-148, DOI: 10.1007/978-3-540-85156-1_74, 2008.


  138. M. Schowalter, A. Rosenauer, J. Titantah, and D. Lamoen. Computation and parametrization of Debye-Waller temperature factors for sphalerite type II-VI, III-V and group IV semiconductors. In M. Luysberg, K. Tillmann, T. Weirich (Eds.): EMC 2008, Vol. 1: Instrumentation and Methods, pp. 153-154, DOI: 10.1007/978-3-540-85156-1_77, 2008.


  139. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, and M. Hetterich. The role of segregation in InGaAs heteroepitaxy. In presented at THERMEC, Advanced thin films and nanomaterials (2006) Materials Science Forum Vols. 539-543 (2007) 3540-3545, 2007.


  140. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, and M. Hetterich. The role of segregation in InGaAs heteroepitaxy. In Materials Science Forum, 539-543, (2007), 3540, 2007.


  141. R. Popescu, E. Müller, D. Gerthsen, M. Wanner, M. Schowalter, A. Rosenauer, and A. Böttcher. Mean Inner Coulomb Potential of Au Clusters Analyzed by Transmission Electron Holography. In Proceedings of Microscopy and Microanalysis Conference (2007, 2007.


  142. R. Popescu, E. Müller, D. Gerthsen, M. Wanner, M. Schowalter, A. Rosenauer, A. Böttcher, D. Löffler, and P. Weis. Increase of the Mean Inner Coulomb Potential of Au in Au Clusters Induced by Surface Tension. In MC 2007, Saarbrücken, Germany, September 2-7, 2007 Microsc. Microanal. 13 (Suppl. 3), 2007, 138 DOI: 10.1017/S1431927607080695, 2007.


  143. Andreas Rosenauer and Marco Schowalter. STEMSIM-a new software tool for simulation of STEM HAADF Z-contrast imaging. In A. G. Cullis and P. A. Midgley, editors, Springer Proceedings in Physics, volume 120, pages 169-172, 2007. Springer.


  144. Andreas Rosenauer, Marco Schowalter, Knut Müller, John Titantah, and Dirk Lamoen. Ab-inito Methods as Tools for Quantitative High-Resolution Transmission Electron Microscopy. In MRS Fall Meeting, Boston (USA) [Invited talk], 2007.


  145. A. Rosenauer, M. Schowalter, K. Müller, J. Titantah, D. Lamoen, P. Kruse, and D. Gerthsen. Ab-inito Methods as Tools for Quantitative High-Resolution Transmission Electron Microscopy. In MRS Autumn Meeting 2008 Symposium C: Quantitative Electron Microscopy for Materials Science SESSION C21: HRTEM and Quantitative Comparison of Experiment and Theory II, 2007.


  146. M. Schowalter, A. Rosenauer, J. Titantah, and D. Lamoen. Calculation of Debye-Waller temperature factors for GaAs. In Springer Proceedings in Physics: MSM(2007), 2007.


  147. M. Schowalter, A. Rosenauer, J. Titantah, and D. Lamoen. Temperature dependence of Debye-Waller Factors of sphalerite III-V Semiconductors calculated from Ab Initio Force Constants. In MC 2007, Saarbrücken, Germany, September 2-7, 2007 Microsc. Microanal. 13 (Suppl. 3), 2007, 128 DOI: 10.1017/S1431927607080646, 2007.


  148. J. T. Titantah, D. Lamoen, M. Schowalter, and Rosenauer. Bond length variations in InGaAs crystals fom Tersoff potential. In Springer Proceedings in Physics: MSM(2007), 2007.


  149. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission Electron Microscopy Study of In-Segregation and Critical Floating-Layer Content of Indium for Island Formation in InGaAs. In Proceedings of the International Microscopy Conference 16, Sapporo, Japan (2006), 2006.


  150. A. Pretorius, M. Schowalter, N. Daneu, R. Kröger, A. Recnik, and A. Rosenauer. Structural analysis of pyramidal defects in Mg-doped GaN. In ICNS-6, August / September 2005, Bremen Phys. stat. sol c, 3 (2006), 1803, 2006.


  151. A. Rosenauer, A. Pretorius, M. Schowalter, K. Müller, T. Yamaguchi, D. Hommel, D. Litvinov, and D. Gerthsen. Composition determination of semiconductor nanostructures. In NVvM - BSM Joint Meeting Lunteren, NL, November 26-28, 2006, 2006.


  152. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. Ab initio computation of 002 structure factors for electron scattering in strained InGaAs. In Proceedings of DFTEM, Vienna (2006), 2006.


  153. E. Roventa, G. Alexe, M. Schowalter, R. Kroeger, D. Hommel, and A. Rosenauer. Anisotropic Spatial Correlation of CdSe/Zn(S)Se Quantum dot Stacks Grown by MBE. In Presented at 12th International Conference on II-VI Compounds, September 12-16, Warsaw, Poland Phys. Stat. Sol.-C, 3 (2006) 887-890, 2006.


  154. M. Schowalter, A. Rosenauer, D. Litvinov, and D. Gerthsen. Investigation of segregation by quantitative transmission electron microscopy. In Optica Applicata 36 (2006) 297-309, 2006.


  155. M. Schowalter, A. Rosenauer, J. Titantah, D. Lamoen, P. Kruse, and D. Gerthsen. Computation of the mean inner Coulomb potential of technological important semiconductors, gold and amorphous carbon. In Proceeding of DFTEM, Vienna (2006), page 11, 2006.


  156. M. Beer, K. Engl, J. Zweck, A. Able, M. Wegscheider, M. Schowalter, and A. Rosenauer. Quantative TEM Analysis of the composition of InGaN/AlGaN layers: Selection of the proper imaging conditions. In Presented at Microscopy Conference Davos (2005), 2005.


  157. E. Müller, P. Kruse, D. Gerthsen, A. Rosenauer, M. Schowalter, D. Lamoen, R. Kling, and A. Waag. Measurement of the Mean Inner Potential of ZnO Nanorods by Transmission Electron Holography. In Presented at Microscopy Converence Davos (2005), 2005.


  158. E. Müller, P. Kruse, D. Gerthsen, A. Rosenauer, M. Schowalter, D. Lamoen, R. Kling, and A. Waag. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography. In Presented at E-MRS 2005 Spring Meeting Strassbourg (2005), 2005.


  159. E. Müller, P. Kruse, D. Gerthsen, A. Rosenauer, M. Schowalter, D. Lamoen, R. Kling, and A. Waag. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography. In Springer Proceedings in Physics 107, 233 (2005), ISBN: 3.540-31914-X, 2005.


  160. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron diffraction in strained In(x)Ga(1-x)As. In Springer Proceedings in Physics 107, 151 (2005), ISBN: 3.540-31914-X, 2005.


  161. M. Schowalter, A. Rosenauer, D. Lamoen, P. Kruse, and D. Gerthsen. Ab initio computation of the mean inner coulomb potential of technologically important semiconductors. In Springer Proceedings in Physics 107, 233 (2005), ISBN: 3.540-31914-X, 2005.


  162. T. Torunski, O. Rubel, W. Stolz, K. Volz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Annealing Behaviour of N Containing III/V-Semiconductors. In presented at Electronics Materials Conference (EMC) , Santa Barbara (USA), 22.06.-24.06, 2005.


  163. M. Schowalter, P. Kruse, D. Lamoen, A. Rosenauer, and D. Gerthsen. First principles calculation of the mean inner Coulomb potential for cubic II/VI and hexagonal III/V semiconductors. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 195-196, 2004.


  164. M. Schowalter, A. Rosenauer, D. Lamoen, and D. Gerthsen. Strain state analysis of InGAAs/GaAs heterostructures: Elastic relaxation in cross section and cleaved specimen,. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 129-130, 2004.


  165. T. Torunski, K. Volz, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Quantification of N distribution in Ga(Nas)/GaAs multi-quantum well structures. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 2, 441-442, 2004.


  166. M. Melzer, Marco Schowalter, Andreas Rosenauer, D. Gerthsen, and J. P. Reithmaier. Untersuchung der Segregation von In in InAs/AlAs Heterostrukturen. In DPG Frühjahrstagung, Dresden (Germany) Verhandl. DPG (VI) 38, 1, 186, 2003.


  167. A. Rosenauer, M. Melzer, M. Schowalter, D. Gerthsen, E. Piscopiello, A. Passaseo, R. Cingolani, R. Reithmaier, J. P. amd Krebs, A. Forchel, and G. Van Tendeloo. Segregation in InGaAs/GaAs Quantum Wells: MOCVD versus MBE. In Microscopy Conference MC2003, International Forum for Advanced Microscopy, September 7-12, 2003, Dresden, Germany Micrsocopy and Microanalysis 9 (2003) 230-1, 2003.


  168. M. Schowalter, M. Melzer, A. Rosenauer, D. Gerthsen, R. Krebs, J. P. Reithmaier, A. Forchel, M. Arzberger, M. Bichler, G. Abstreiter, M. Grau, M.-C. Amann, R. Sellin, and D. Bimberg. Segregation in III-V semiconductor heterostructures studied by transmission electron microscopy,. In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003), 2003.


  169. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative investigation of Sb distribution in GaSb/GaAs heterostructures,. In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003), 2003.


  170. M. Schowalter, A. Rosenauer, D. Gerthsen, R. Sellin, and D. Bimberg. Structure factors for the composition determination of InGaAs/GaAs quantum wells with the 002 beam: Isolated atom approximation versus density function theory. In Microscopy Conference MC2003, International Forum for Advanced Microscopy, September 7-12, 2003, Dresden, Germany Microscopy and Microanalysis 9 (2003), 234-5, 2003.


  171. V. Potin, E. Hahn, M. Schowalter, A. Rosenauer, D. Gerthsen, B. Kuhn, and F. Scholz. Quantitative analysis of the In-distribution in InGaN/GaN-heterostructures. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, 2002.


  172. Marco Schowalter, Andreas Rosenauer, Dagmar Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Untersuchung der Segregation von In in InAs/AlAs Heterostrukturen. In DPG Frühjahrstagung, Regensburg (Germany) Verhandl. DPG (VI) 37, 1, 163, 2002.


  173. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Influence of growth interruptions on the composition of GaSb/GaAs quantum wells. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 53, 2002.


  174. M. Schowalter, A. Rosenauer, D. Gerthsen, R. Sellin, and D. Bimberg. Segregation in MBE and MOCVD: A comparison. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 113, 2002.


  175. M. Schowalter, B. Neubauer, A. Rosenauer, D. Gerthsen, O. Schön, and M. Heuken. MOCVD growth of Ga(Al)N/InGaN/Ga(Al)N-Heterostructures: Influence of the Buffer Layer Al-Concentration an d Growth Duration on the In-Incorporation in InGaN. In MRS spring meeting 2001, San Francisco, 2001.


  176. M. Schowalter, P. Pfundstein, B. Neubauer, A. Rosenauer, D. Gerthsen, T. Stephan, H. Kalt, A. Allam, B. Schneller, O. Schön, and M. Heuken. Composition of InGaN:In distribution and influence of lattice strain. In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Inst. Phys. Conf. Ser. 169, 273-276 Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.


Miscellaneous
  1. Knut Müller, Thorsten Mehrtens, Florian Krause, Marco Schowalter, and Andreas Rosenauer. Simulation of STEM images [Invited talk], February 2014.


  2. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Kerstin Volz, Heike Soltau, Pavel Potapov, and Karl Engl. Strain Analysis by Nano-Beam Electron Diffraction [Invited talk], 2013.



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