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Publications about '6865Fg'
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Articles in journal, book chapters
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D. Litvinov,
M. Schowalter,
A. Rosenauer,
B. Daniel,
J. Fallert,
W. Löffler,
H. Kalt,
and M. Hetterich.
Determination of critical thickness for defect formation of CdSe/ZnSe heterostructures by transmission electron microscopy and photoluminescence spectroscopy.
physica status solidi (a),
205(12):2892-2897,
2008.
ISSN: 1862-6319.
[doi:10.1002/pssa.200824151]
Keyword(s): 68.37.Lp,
68.37.Og,
68.55.ag,
68.65.Fg,
78.55.Et.
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Yung-Chen Cheng,
En-Chiang Lin,
Cheng-Ming Wu,
C.C. Yang,
Jer-Ren Yang,
Andreas Rosenauer,
Kung-Jen Ma,
Shih-Chen Shi,
L.C. Chen,
Chang-Chi Pan,
and Jen-Inn Chyi.
Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions.
Applied Physics Letters,
84(14):2506-2508,
2004.
ISSN: 0003-6951.
[doi:10.1063/1.1690872]
Keyword(s): III-V semiconductors,
gallium compounds,
indium compounds,
photoluminescence,
quantum confined Stark effect,
semiconductor doping,
semiconductor quantum wells,
silicon,
wide band gap semiconductors,
6172Vv,
6865Fg,
7855Cr,
7867De.
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T. Passow,
K. Leonardi,
H. Heinke,
D. Hommel,
D. Litvinov,
A. Rosenauer,
D. Gerthsen,
J. Seufert,
G. Bacher,
and A. Forchel.
Quantum dot formation by segregation enhanced CdSe reorganization.
Journal of Applied Physics,
92(11):6546-6552,
2002.
ISSN: 0021-8979.
[doi:10.1063/1.1516248]
Keyword(s): II-VI semiconductors,
X-ray diffraction,
cadmium compounds,
molecular beam epitaxial growth,
photoluminescence,
semiconductor growth,
semiconductor quantum dots,
semiconductor quantum wells,
surface segregation,
transmission electron microscopy,
zinc compounds,
6835Dv,
6865Fg,
6865Hb,
7855Et,
7866Hf,
8105Dz,
8115Hi.
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V. Potin,
A. Rosenauer,
D. Gerthsen,
B. Kuhn,
and F. Scholz.
Comparison of the Morphology and In Distribution of Capped and Uncapped InGaN Layers by Transmission Electron Microscopy.
physica status solidi (b),
234(3):947-951,
2002.
ISSN: 1521-3951.
[doi:10.1002/1521-3951(200212)234:3<947::AID-PSSB947>3.0.CO;2-P]
Keyword(s): 68.37.Lp,
68.55.Nq,
68.65.Fg,
81.05.Ea.
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D. Gerthsen,
B. Neubauer,
A. Rosenauer,
T. Stephan,
H. Kalt,
O. Schon,
and M. Heuken.
InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition.
Applied Physics Letters,
79(16):2552-2554,
2001.
ISSN: 0003-6951.
[doi:10.1063/1.1409949]
Keyword(s): III-V semiconductors,
MOCVD,
gallium compounds,
indium compounds,
lattice constants,
photoluminescence,
red shift,
semiconductor growth,
semiconductor quantum wells,
spectral line intensity,
transmission electron microscopy,
wide band gap semiconductors,
6865Fg,
7855Cr,
7867De,
8107St,
8115Gh.
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Last modified: Wed Sep 21 12:45:09 2016
Author: knut.
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