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Publications about 'Al'
Thesis
  1. Knut Müller. Transmission electron microscopy of InGaNAs nanostructures using ab-initio structure factors for strain-relaxed supercells. PhD thesis, Universität Bremen, May 2011.


Articles in journal, book chapters
  1. Daniel Carvalho, Knut Müller-Caspary, Marco Schowalter, Tim Grieb, Thorsten Mehrtens, Andreas Rosenauer, Rafael Ben, Teresa Garcìa, Andrés Redondo-Cubero, Katharina Lorenz, Bruno Daudin, and Francisco M. Morales. Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction. Scientific Reports, 6:28459, June 2016. [doi:10.1038/srep28459] Keyword(s): DPC, strain, NBD, SANBED, nano-beam electron diffraction, polarization, polarisation, piezoelectric.


  2. Florian F. Krause, Marco Schowalter, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Effects of instrument imperfections on quantitative scanning transmission electron microscopy. Ultramicroscopy, 161:146-160, 2016. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.10.026] Keyword(s): TEM.


  3. Matthias Lohr, Ralph Schregle, Michael Jetter, Clemens Wächter, Knut Müller-Caspary, Thorsten Mehrtens, Andreas Rosenauer, Ines Pietzonka, Martin Strassburg, and Josef Zweck. Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures. physica status solidi (b), 253:140-144, 2016. ISSN: 1521-3951. [doi:10.1002/pssb.201552288] Keyword(s): DPC, Efficiency droop, EFTEM, electric fields, GaN, HAADF, IMFP, MQW, QCSE, quantification, STEM.


  4. H. Ryll, M. Simson, R. Hartmann, P. Holl, M. Huth, S. Ihle, Y. Kondo, P. Kotula, A. Liebel, K. Müller-Caspary, A. Rosenauer, R. Sagawa, J. Schmidt, H. Soltau, and L. Strüder. A pnCCD-based, fast direct single electron imaging camera for TEM and STEM. Journal of Instrumentation, 11(04):P04006, 2016. [WWW]


  5. Marc Sauerbrey, Jan Höcker, Meikel Wellbrock, Marco Schowalter, Jon-Olaf Krisponeit, Knut Müller-Caspary, Andreas Rosenauer, Gang Wei, Lucio Colombi Ciacchi, Jens Falta, and Jan Ingo Flege. Ultrasmooth Ru(0001) Films as Templates for Ceria Nanoarchitectures. Crystal Growth & Design, 16(8):4216-4224, 2016. [doi:10.1021/acs.cgd.6b00192]


  6. Junjie Shi, Christoph Mahr, M. Mangir Murshed, Volkmar Zielasek, Andreas Rosenauer, Thorsten M. Gesing, Marcus Baumer, and Arne Wittstock. A versatile sol-gel coating for mixed oxides on nanoporous gold and their application in the water gas shift reaction. Catal. Sci. Technol., 6:5311-5319, 2016. [doi:10.1039/C5CY02205C]


  7. P. S. Sokolov, M. Yu. Petrov, T. Mehrtens, K. Müller-Caspary, A. Rosenauer, D. Reuter, and A. D. Wieck. Reconstruction of nuclear quadrupole interaction in (In,Ga)As/GaAs quantum dots observed by transmission electron microscopy. Phys. Rev. B, 93:045301, January 2016. [doi:10.1103/PhysRevB.93.045301]


  8. Florian F. Krause, Jan-Philipp Ahl, Darius Tytko, Pyuck-Pa Choi, Ricardo Egoavil, Marco Schowalter, Thorsten Mehrtens, Knut Müller-Caspary, Johan Verbeeck, Dierk Raabe, Joachim Hertkorn, Karl Engl, and Andreas Rosenauer. Homogeneity and composition of AlInGaN: A multiprobe nanostructure study. Ultramicroscopy, 156(0):29-36, 2015. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.04.012] Keyword(s): HAADF STEM.


  9. C. Mahr, K. Müller-Caspary, T. Grieb, M. Schowalter, T. Mehrtens, F.F. Krause, D. Zillmann, and A. Rosenauer. Theoretical study of precision and accuracy of strain analysis by nano-beam electron diffraction. Ultramicroscopy, 158(0):38-48, 2015. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.06.011] Keyword(s): Strain measurement.


  10. Suman Pokhrel, Johannes Birkenstock, Arezoo Dianat, Janina Zimmermann, Marco Schowalter, Andreas Rosenauer, Lucio Colombi Ciacchi, and L. Madler. In situ high temperature X-ray diffraction, transmission electron microscopy and theoretical modeling for the formation of WO3 crystallites. CrystEngComm, 17:6985-6998, 2015. [doi:10.1039/C5CE00526D]


  11. U. Rossow, L. Hoffmann, H. Bremers, E.R. Buss, F. Ketzer, T. Langer, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer. Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells. Journal of Crystal Growth, 414(0):49-55, 2015. Note: Proceedings of the Seventeenth International Conference on Metalorganic Vapor Phase Epitaxy. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2014.11.040] Keyword(s): A1. Surface processes.


  12. Tim Grieb, Knut Müller, Emmanuel Cadel, Andreas Beyer, Marco Schowalter, Etienne Talbot, Kerstin Volz, and Andreas Rosenauer. Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM. Microscopy and Microanalysis, 20:1740, 9 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614013051]


  13. Dominik Heinz, Mohamed Fikry, Timo Aschenbrenner, Marco Schowalter, Tobias Meisch, Manfred Madel, Florian Huber, Matthias Hocker, Manuel Frey, Ingo Tischer, Benjamin Neuschl, Thorsten Mehrtens, Knut Müller, Andreas Rosenauer, Detlef Hommel, Klaus Thonke, and Ferdinand Scholz. GaN tubes with coaxial non- and semipolar GaInN quantum wells. Phys. Status Solidi (c), 11:648-651, 2014.


  14. Andreas Rosenauer, Florian F. Krause, Knut Müller, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. Phys. Rev. Lett., 113:096101, August 2014. [doi:10.1103/PhysRevLett.113.096101]


  15. Ahin Roy, Subhajit Kundu, Knut Müller, Andreas Rosenauer, Saransh Singh, Prita Pant, M. P. Gururajan, Praveen Kumar, J. Weissmüller, Abhishek Kumar Singh, and N. Ravishankar. Wrinkling of Atomic Planes in Ultrathin Au Nanowires. Nano Letters, 14(8):4859-4866, 2014. [doi:10.1021/nl502259w]


  16. Marco Schowalter, Ingo Stoffers, Florian F. Krause, Thorsten Mehrtens, Knut Müller, Malte Fandrich, Timo Aschenbrenner, Detlef Hommel, and Andreas Rosenauer. Influence of Static Atomic Displacements on Composition Quantification of AlGaN/GaN Heterostructures from HAADF-STEM Images. Microscopy and Microanalysis, 20:1463-1470, 10 2014. ISSN: 1435-8115. [doi:10.1017/S1431927614012732]


  17. Duggi V. Sridhara Rao, Ramachandran Sankarasubramanian, Kuttanellore Muraleedharan, Thorsten Mehrtens, Andreas Rosenauer, and Dipankar Banerjee. Quantitative Strain and Compositional Studies of InGaAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques. Microscopy and Microanalysis, 20:1262-1270, 8 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614000762]


  18. Malte Fandrich, Thorsten Mehrtens, Timo Aschenbrenner, Thorsten Klein, Martina Gebbe, Stephan Figge, Carsten Kruse, Andreas Rosenauer, and Detlef Hommel. Nitride based heterostructures with Ga- and N-polarity for sensing applications. Journal of Crystal Growth, 370(0):68-73, 2013. ISSN: 0022-0248. [WWW] Keyword(s): A1. Characterization, A3. Metalorganic vapor phase epitaxy, A3. Molecular beam epitaxy, B1. Nitrides, B3. Sensors.


  19. L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, M. Schowalter, T. Mehrtens, A Rosenauer, and A. Hangleiter. Atomics scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content. Applied Physics Letters, 102:102110, 2013. [doi:10.1063/1.4795623]


  20. H. Kauko, T. Grieb, R. Bjørge, M. Schowalter, A.M. Munshi, H. Weman, A. Rosenauer, and A.T.J. van Helvoort. Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM. Micron, 44(0):254-260, 2013. ISSN: 0968-4328. [WWW] [doi:10.1016/j.micron.2012.07.002] Keyword(s): HAADF-STEM.


  21. Fabian Meder, Julia Wehling, Artur Fink, Beate Piel, Kaibo Li, Kristian Frank, Andreas Rosenauer, Laura Treccani, Susan Koeppen, Andreas Dotzauer, and Kurosch Rezwan. The role of surface functionalization of colloidal alumina particles on their controlled interactions with viruses. Biomaterials, 34(17):4203-4213, 2013. ISSN: 0142-9612. [WWW] [doi:10.1016/j.biomaterials.2013.02.059] Keyword(s): Virus-material interaction.


  22. Thorsten Mehrtens, Knut Müller, Marco Schowalter, Dongzhi Hu, Daniel M. Schaadt, and Andreas Rosenauer. Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images. Ultramicroscopy, 131(0):1-9, 2013. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2013.03.018] Keyword(s): HAADF-STEM.


  23. K Müller, H Ryll, I Ordavo, M Schowalter, J Zweck, H Soltau, S Ihle, L Strüder, K Volz, P Potapov, and A Rosenauer. STEM strain analysis at sub-nanometre scale using millisecond frames from a direct electron read-out CCD camera. Journal of Physics: Conference Series, 471(1):012024, 2013. [WWW]


  24. Sarah Röhe, Kristian Frank, Andreas Schaefer, Arne Wittstock, Volkmar Zielasek, Andreas Rosenauer, and Marcus Bäumer. CO oxidation on nanoporous gold: A combined TPD and XPS study of active catalysts. Surface Science, 609(0):106-112, 2013. ISSN: 0039-6028. [WWW] [doi:10.1016/j.susc.2012.11.011] Keyword(s): Gold.


  25. V.C. Srivastava, K.B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, J. Eckert, A. Rosenauer, and H.-W. Zoch. Microstructural characteristics of spray formed and heat treated Al-(Y, La)-Ni-Co system. Journal of Alloys and Compounds, 578:471-480, 2013. ISSN: 0925-8388. [WWW] [doi:10.1016/j.jallcom.2013.06.159] Keyword(s): Spray forming.


  26. Julia Wehling, Eike Volkmann, Tim Grieb, Andreas Rosenauer, Michael Maas, Laura Treccani, and Kurosch Rezwan. A critical study: Assessment of the effect of silica particles from 15 to 500Â nm on bacterial viability. Environmental Pollution, 176(0):292-299, 2013. ISSN: 0269-7491. [WWW] [doi:10.1016/j.envpol.2013.02.001] Keyword(s): Silica.


  27. Timo Daberkow, Fabian Meder, Laura Treccani, Marco Schowalter, Andreas Rosenauer, and Kurosch Rezwan. Fluorescence labeling of colloidal core-shell particles with defined isoelectric points for in vitro studies. Acta Biomaterialia, 8(2):720-727, 2012. ISSN: 1742-7061. [WWW] [doi:10.1016/j.actbio.2011.11.007] Keyword(s): Fluorescence labeling.


  28. Thorsten M. Gesing, Marco Schowalter, Claudia Weidenthaler, M. Mangir Murshed, Gwilherm Nenert, Cecilia B. Mendive, Mariano Curti, Andreas Rosenauer, J.-Christian Buhl, Hartmut Schneider, and Reinhard X. Fischer. Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons. J. Mater. Chem., 22:18814-18823, 2012. [doi:10.1039/C2JM33208F]


  29. Jens A. Kemmler, Suman Pokhrel, Johannes Birkenstock, Marco Schowalter, Andreas Rosenauer, Nicolae Bârsan, Udo Weimar, and Lutz Mädler. Quenched, nanocrystalline In4Sn3O12 high temperature phase for gas sensing applications. Sensors and Actuators B: Chemical, 161(1):740-747, 2012. ISSN: 0925-4005. [WWW] [doi:10.1016/j.snb.2011.11.026] Keyword(s): Flame spray pyrolysis.


  30. Fabian Meder, Timo Daberkow, Laura Treccani, Michaela Wilhelm, Marco Schowalter, Andreas Rosenauer, Lutz Mädler, and Kurosch Rezwan. Protein adsorption on colloidal alumina particles functionalized with amino, carboxyl, sulfonate and phosphate groups. Acta Biomaterialia, 8(3):1221-1229, 2012. ISSN: 1742-7061. [WWW] [doi:10.1016/j.actbio.2011.09.014] Keyword(s): Surface functionalization.


  31. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy. Microscopy and Microanalysis, 18(05):995-1009, 2012. [doi:10.1017/S1431927612001274]


  32. Knut Müller, Henning Ryll, Ivan Ordavo, Sebastian Ihle, Lothar Strüder, Kerstin Volz, Josef Zweck, Heike Soltau, and Andreas Rosenauer. Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device. Applied Physics Letters, 101(21):212110, 2012. [WWW] [doi:10.1063/1.4767655] Keyword(s): CCD image sensors, electron detection, electron probes, nanostructured materials, scanning-transmission electron microscopy, semiconductor materials, strain measurement.


  33. Marco Schowalter, Andreas Rosenauer, and Kerstin Volz. Parameters for temperature dependence of mean-square displacements for B-, Bi- and Tl-containing binary III-V compounds. Acta Crystallographica Section A, 68(3):319-323, 2012. ISSN: 1600-5724. [doi:10.1107/S0108767312002681] Keyword(s): Debye-Waller factors, mean-square displacements, force constants, phonon density of states, phonon dispersion relations, density functional theory.


  34. Huanjun Zhang, Amir R. Gheisi, Andreas Sternig, Knut Müller, Marco Schowalter, Andreas Rosenauer, Oliver Diwald, and Lutz Mädler. Bulk and Surface Excitons in Alloyed and Phase-Separated ZnO-MgO Particulate Systems. ACS Applied Materials & Interfaces, 4(5):2490-2497, 2012. [doi:10.1021/am300184b]


  35. Balint Aradi, Peter Deak, Huynh Anh Huy, Andreas Rosenauer, and Thomas Frauenheim. Role of Symmetry in the Stability and Electronic Structure of Titanium Dioxide Nanowires. The Journal of Physical Chemistry C, 115(38):18494-18499, 2011. [doi:10.1021/jp206183x]


  36. T. Aschenbrenner, G. Kunert, W. Freund, C. Kruse, S. Figge, M. Schowalter, C. Vogt, J. Kalden, K. Sebald, A. Rosenauer, J. Gutowski, and D. Hommel. Catalyst free self-organized grown high-quality GaN nanorods. physica status solidi (b), 248(8):1787-1799, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147148] Keyword(s): MBE, MOVPE, nanorods, nitrides, TEM, III-V semiconductors.


  37. Heiko Dartsch, Christian Tessarek, Timo Aschenbrenner, Stephan Figge, Carsten Kruse, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity. Journal of Crystal Growth, 320(1):28-31, 2011. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2010.12.008] Keyword(s): A1. Electroluminescence.


  38. J. K. Dash, A. Rath, R. R. Juluri, P. Santhana Raman, K. Müller, A. Rosenauer, and P. V. Satyam. DC heating induced shape transformation of Ge structures on ultra clean Si (5 5 12) surfaces. Journal of Physics: Condensed matter, 23:135002, 2011.


  39. J. K. Dash, A. Rath, R. R. Juluri, P. Santhana Raman, K. Müller, M. Schowalter, R. Imlau, A. Rosenauer, and P. V. Satyam. Shape transformation of SiGe structures on ultra clean Si(5 5 7) and Si(5 5 12) surfaces. Journal of Physics: Conference Series, 326(1):012021, 2011. [WWW]


  40. Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Gerd Kunert, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. A structural investigation of highly ordered catalyst- and mask-free GaN nanorods. Nanotechnology, 22(2):025603, 2011. [WWW]


  41. M. Florian, F. Jahnke, A. Pretorius, A. Rosenauer, H. Dartsch, C. Kruse, and D. Hommel. Influence of growth imperfections on optical properties of nitride pillar VCSEL microcavities. physica status solidi (b), 248(8):1867-1870, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147159] Keyword(s): lasers, laser diodes, microcavities, optical properties, III-V semiconductors.


  42. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging. Journal of Physics: Conference Series, 326(1):012033, 2011. [WWW]


  43. Katharina Gries, Fabian Heinemann, Meike Gummich, Andreas Ziegler, Andreas Rosenauer, and Monika Fritz. Influence of the Insoluble and Soluble Matrix of Abalone Nacre on the Growth of Calcium Carbonate Crystals. Crystal Growth & Design, 11(3):729-734, 2011. [doi:10.1021/cg101240e]


  44. Vincenco Grillo, Knut Müller, Frank Glas, Kerstin Volz, and Andreas Rosenauer. Toward Simultaneous Assessment of In and N in InGaAsN Alloys by Quantitative STEM-ADF Imaging. Microscopy and Microanalysis, 17:1862-1863, 7 2011. ISSN: 1435-8115. [WWW] [doi:10.1017/S143192761101018X]


  45. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S A Gerstl, Pyuck-Pa Choi, Dierk Raabe, and Andreas Rosenauer. A (S)TEM and atom probe tomography study of InGaN. Journal of Physics: Conference Series, 326(1):012029, 2011. ISSN: 1742-6596. [WWW]


  46. Knut Müller, Marco Schowalter, Andreas Rosenauer, Dongzhi Hu, Daniel M. Schaadt, Michael Hetterich, Philippe Gilet, Oleg Rubel, Rafael Fritz, and Kerstin Volz. Atomic scale annealing effects on InGaNAs studied by TEM three-beam imaging. Physical Review B, 84(4):045316, July 2011. [doi:10.1103/PhysRevB.84.045316]


  47. Angelika Pretorius, Thomas Schmidt, Timo Aschenbrenner, Tomohiro Yamaguchi, Christian Kübel, Knut Müller, Heiko Dartsch, Detlef Hommel, Jens Falta, and Andreas Rosenauer. Microstructural and compositional analyses of GaN based nanostructures. Physica Status Solidi, 248:1822-1836, 2011. [doi:10.1002/pssb.201147175]


  48. A Rath, J K Dash, R R Juluri, A Rosenauer, and P V Satyam. Temperature-dependent electron microscopy study of Au thin films on Si (1 0 0) with and without a native oxide layer as barrier at the interface. Journal of Physics D: Applied Physics, 44(11):115301, 2011. [WWW]


  49. Th. Schmidt, M. Siebert, J. I. Flege, S. Figge, S. Gangopadhyay, A. Pretorius, T.-L. Lee, J. Zegenhagen, L. Gregoratti, A. Barinov, A. Rosenauer, D. Hommel, and J. Falta. Mg and Si dopant incorporation and segregation in GaN. physica status solidi (b), 248(8):1810-1821, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201046531] Keyword(s): defects, dopants, photoelectron microscopy, segregation, X-ray standing waves.


  50. Jianping Xiao, Agnieszka Kuc, Suman Pokhrel, Marco Schowalter, Satyam Parlapalli, Andreas Rosenauer, Thomas Frauenheim, Lutz Mädler, Lars G. M. Pettersson, and Thomas Heine. Evidence for Fe2+ in Wurtzite Coordination: Iron Doping Stabilizes ZnO Nanoparticles. Small, 7(20):2879-2886, 2011. ISSN: 1613--6829. [doi:10.1002/smll.201100963] Keyword(s): density functional theory, doping, iron, nanoparticles, zinc oxide.


  51. T. Aschenbrenner, H. Dartsch, C. Kruse, M. Anastasescu, M. Stoica, M. Gartner, A. Pretorius, A. Rosenauer, Thomas Wagner, and D. Hommel. Optical and structural characterization of AlInN layers for optoelectronic applications. J. Appl. Phys., 108(6):063533, 2010. [WWW] [doi:10.1063/1.3467964] Keyword(s): aluminium compounds, annealing, distributed Bragg reflectors, extinction coefficients, III-V semiconductors, indium compounds, MOCVD coatings, refractive index, semiconductor epitaxial layers, surface morphology, surface roughness, transmission electron microscopy, vapour phase epitaxial growth, wide band gap semiconductors, X-ray diffraction.


  52. M Dries, B Gamm, K Schultheiss, A Rosenauer, R Schröder, and D Gerthsen. Object-wave Reconstruction by Carbon-Film-Based Zernike- and Hilbert-Phase Plate Microscopy: A Theoretical Study Not Restricted to Weak Phase Objects. Microscopy and Microanalysis, 16(Supplement S2):552-553, 2010. [doi:10.1017/S1431927610055121]


  53. Thorsten M. Gesing, Marco Schowalter, Claudia Weidenthaler, Andreas Rosenauer, Hartmut Schneider, and Reinhard X. Fischer. Mullite-type (Bi${\sb 1{$-$\it x}}$Sr${\sb {\it x}} ){\sb 2}$Al${\sb 4}$O${\sb 9{$-$\it x}/2}$: HT-XRPD, TEM and XPS investigations. Acta Crystallographica Section A, 66(a1):s182-s183, September 2010. [doi:10.1107/S0108767310095887]


  54. Knut Müller, Marco Schowalter, Andreas Rosenauer, Jacob Jansen, Kenji Tsuda, John Titantah, and Dirk Lamoen. Refinement of chemically sensitive structure factors using parallel and convergent beam electron nanodiffraction. Journal of Physics: Conference Series, 209(1):012025, 2010. [WWW] [doi:10.1088/1742-6596/209/1/012025]


  55. Suman Pokhrel, Johannes Birkenstock, Marco Schowalter, Andreas Rosenauer, and Lutz Mädler. Growth of Ultrafine Single Crystalline WO3 Nanoparticles Using Flame Spray Pyrolysis. Crystal Growth & Design, 10(2):632-639, 2010. [doi:10.1021/cg9010423]


  56. Andreas Rosenauer, Katharina Gries, Knut Müller, Marco Schowalter, Angelika Pretorius, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Measurement of composition profiles in III-nitrides by quantitative scanning transmission electron microscopy. Journal of Physics: Conference Series, 209(1):012009, 2010. [WWW] [doi:10.1088/1742-6596/209/1/012009]


  57. Patrick Sonström, Johannes Birkenstock, Yulia Borchert, Laura Schilinsky, Peter Behrend, Katharina Gries, Knut Müller, Andreas Rosenauer, and Marcus Bäumer. Nanostructured Praseodymium Oxide: Correlation between phase transitions and catalytic activity. ChemCatChem, 2:694-704, 2010. [doi:10.1002/cctc.200900311]


  58. V.C. Srivastava, K.B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, J. Eckert, A. Rosenauer, and H.-W. Zoch. Microstructure and mechanical properties of partially amorphous Al85Y8Ni5Co2 plate produced by spray forming. Materials Science and Engineering: A, 527(10–11):2747-2758, 2010. ISSN: 0921-5093. [WWW] [doi:10.1016/j.msea.2010.01.057] Keyword(s): Spray deposition.


  59. Katharina Gries, Roland Kröger, Christian Kübel, Monika Fritz, and Andreas Rosenauer. Investigations of voids in the aragonite platelets of nacre. Acta Biomaterialia, 5(8):3038-3044, 2009. ISSN: 1742-7061. [WWW] [doi:10.1016/j.actbio.2009.04.017] Keyword(s): Nacre.


  60. Knut Müller, Marco Schowalter, Jacob Jansen, Kenji Tsuda, John Titantah, Dirk Lamoen, and Andreas Rosenauer. Refinement of the 200 structure factor for GaAs using parallel and convergent beam electron nanodiffraction data. Ultramicroscopy, 109:802-814, 2009. [doi:10.1016/j.ultramic.2009.03.029] Keyword(s): GaAs, Structure factor refinement, Bonding, Parallel beam electron diffraction, Convergent beam electron diffraction.


  61. Andreas Rosenauer, Katharina Gries, Knut Müller, Angelika Pretorius, Marco Schowalter, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Measurement of specimen thickness and composition in AlGaN/GaN using high-angle annular dark field images. Ultramicroscopy, 109(9):1171-1182, 2009. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2009.05.003] Keyword(s): Quantitative STEM Z-contrast imaging.


  62. M. Schowalter, A. Rosenauer, J. T. Titantah, and D. Lamoen. Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure. Acta Crystallogr., Sect. A, 65(3):227-231, May 2009. [doi:10.1107/S0108767309004966]


  63. V. C. Srivastava, K. B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, A. Rosenauer, H.-W. Zoch, and J. Eckert. Spray forming of Bulk Al85Y8Ni5Co2 with co-existing amorphous, nano- and micro-crystalline Structures. Transactions of the Indian In, 62:331-5, 2009.


  64. Jo Verbeeck, Peter Schattschneider, and Andreas Rosenauer. Image simulation of high resolution energy filtered TEM images. Ultramicroscopy, 109(4):350-360, 2009. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2009.01.003] Keyword(s): Image simulation.


  65. Bernhard Gehl, Andreas Frömsdorf, Vesna Aleksandrovic, Thomas Schmidt, Angelika Pretorius, Jan-Ingo Flege, Sigrid Bernstorff, Andreas Rosenauer, Jens Falta, Horst Weller, and Marcus Bäumer. Structural and Chemical Effects of Plasma Treatment on Close-Packed Colloidal Nanoparticle Layers. Advanced Functional Materials, 18(16):2398-2410, 2008. ISSN: 1616-3028. [doi:10.1002/adfm.200800274] Keyword(s): Adsorption, GISAXS, Nanoparticle layers, Plasma, XPS.


  66. Abdul Kadir, M.R. Gokhale, Arnab Bhattacharya, Angelika Pretorius, and Andreas Rosenauer. {MOVPE} growth and characterization of InN/GaN single and multi-quantum well structures. Journal of Crystal Growth, 311(1):95-98, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2008.10.056] Keyword(s): A1. Transmission electron microscopy.


  67. A. Pretorius, T. Yamaguchi, C. Kübel, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigation of growth and dissolution of nano-islands grown by molecular beam epitaxy. Journal of Crystal Growth, 310(4):748-756, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2007.11.203] Keyword(s): A1. High resolution transmission electron microscopy.


  68. Andreas Rosenauer, Marco Schowalter, John T. Titantah, and Dirk Lamoen. An emission-potential multislice approximation to simulate thermal diffuse scattering in high-resolution transmission electron microscopy. Ultramicroscopy, 108(12):1504-1513, 2008. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2008.04.002] Keyword(s): Thermal diffuse scattering.


  69. EHM Rossi, A. Rosenauer, and G. Van Tendeloo. Influence of strain, specimen orientation and background estimation on composition evaluation of InAs/GaAs by TEM. Philosophical Magazine, 87(29):4461-4473, 2007. [WWW] [doi:10.1080/14786430701551905]


  70. K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells. J. Appl. Phys., 102(8):083504, 2007. [WWW] [doi:10.1063/1.2794739] Keyword(s): annealing, gallium arsenide, gallium compounds, III-V semiconductors, impurity distribution, indium compounds, photoluminescence, Rutherford backscattering, semiconductor epitaxial layers, semiconductor heterojunctions, semiconductor quantum wells, transmission electron microscopy.


  71. R. Kröger, C. Kruse, C. Roder, D. Hommel, and A. Rosenauer. Relaxation in crack-free AlN/GaN superlattices. physica status solidi (b), 243(7):1533-1536, 2006. ISSN: 1521-3951. [doi:10.1002/pssb.200565470] Keyword(s): 42.79.Fm, 68.37.Lp, 68.55.Ln, 68.65.Cd, 71.72.Ff, 83.85.St.


  72. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in $In_{x}Ga_{1-{}x}As$. Phys. Rev. B, 74(16):165306, October 2006. [doi:10.1103/PhysRevB.74.165306]


  73. Th. Schmidt, M. Siebert, A. Pretorius, S. Gangopadhyay, S. Figge, J.I. Flege, L. Gregoratti, A. Barinov, D. Hommel, and J. Falta. Spectro-microscopy of Si doped GaN films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 246(1):79-84, 2006. Note: Synchrotron Radiation and Materials Science Proceedings of the E-MRS 2005 Symposium O on Synchrotron Radiation and Materials Science E-MRS 2005 Symposium O. ISSN: 0168-583X. [WWW] [doi:10.1016/j.nimb.2005.12.018] Keyword(s): Photoemission microscopy.


  74. M. Schowalter, A. Rosenauer, D. Lamoen, P. Kruse, and D. Gerthsen. Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold. Applied Physics Letters, 88(23):232108-232108-3, 2006. ISSN: 0003-6951. [doi:10.1063/1.2210453] Keyword(s): APW calculations, II-VI semiconductors, III-V semiconductors, ab initio calculations, aluminium compounds, cadmium compounds, density functional theory, electric potential, gallium compounds, gold, indium compounds, monolayers, wide band gap semiconductors, zinc compounds, 7361Ey, 7361Ga.


  75. E. Piscopiello, A. Rosenauer, A. Passaseo, E. H. Montoya Rossi, and G. Van Tendeloo. Segregation in In(x)Ga(1-x)As/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition. Philosophical Magazine, 85(32):3857-3870, 2005. [doi:10.1080/147830500269402]


  76. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron scattering in strained In(x)Ga(1-x)As. Phys. Rev. B, 72:085326, August 2005. [doi:10.1103/PhysRevB.72.085326] Keyword(s): structure factor, strain, InGaAs, In, Ga, As, first-principles calculation, electron scattering.


  77. E. Roventa, G. Alexe, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigations of spatial correlation of CdSe/ZnSe quantum dot stacks grown by molecular beam epitaxy. Journal of Crystal Growth, 278(1-4):316-319, 2005. Note: 13th International Conference on Molecular Beam Epitaxy. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2005.01.017] Keyword(s): A3. Migration enhanced epitaxy.


  78. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668-1683, 2003. ISSN: 1610-1642. [doi:10.1002/pssc.200303129] Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.


  79. D. Litvinov, A. Rosenauer, D. Gerthsen, N. N. Ledentsov, D. Bimberg, G. A. Ljubas, V. V. Bolotov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, and I. P. Soshnikov. Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface. Applied Physics Letters, 81(6):1080-1082, 2002. [WWW] [doi:10.1063/1.1497994] Keyword(s): gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor quantum wires, semiconductor epitaxial layers, semiconductor superlattices, transmission electron microscopy, self-assembly, photoluminescence.


  80. D. Litvinov, A. Rosenauer, D. Gerthsen, and H. Preis. Electron microscopy investigation of the defect configuration in CdSe/ZnSe quantum dot structures. Philosophical Magazine A, 82(7):1361-1380, 2002. [doi:10.1080/01418610208235677]


  81. D. Gerthsen, B. Neubauer, A. Rosenauer, T. Stephan, H. Kalt, O. Schon, and M. Heuken. InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition. Applied Physics Letters, 79(16):2552-2554, 2001. ISSN: 0003-6951. [doi:10.1063/1.1409949] Keyword(s): III-V semiconductors, MOCVD, gallium compounds, indium compounds, lattice constants, photoluminescence, red shift, semiconductor growth, semiconductor quantum wells, spectral line intensity, transmission electron microscopy, wide band gap semiconductors, 6865Fg, 7855Cr, 7867De, 8107St, 8115Gh.


  82. S. Kret, P. Ruterana, A. Rosenauer, and D. Gerthsen. Extracting Quantitative Information from High Resolution Electron Microscopy. physica status solidi (b), 227(1):247-295, 2001. ISSN: 1521-3951. [doi:10.1002/1521-3951(200109)227:1<247::AID-PSSB247>3.0.CO;2-F] Keyword(s): 68.35.Dv, 68.37.Lp, 68.55.Nq, 68.65.-k, S7.12, S7.14, S8.13.


  83. N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Soshnikov, V. Shchukin, V. Ustinov, A. Egorov, A. Zukov, V. Volodin, M. Efremov, V. Preobrazhenskii, B. Semyagin, D. Bimberg, and Zh. Alferov. Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces. Journal of Electronic Materials, 30:463-470, 2001. ISSN: 0361-5235. [doi:10.1007/s11664-001-0084-1] Keyword(s): Chemie und Materialwissenschaften.


  84. D. Litvinov, A. Rosenauer, D. Gerthsen, H. Preis, K. Fuchs, and S. Bauer. Growth and vertical correlation of CdSe/ZnSe quantum dots. Journal of Applied Physics, 89(7):3695-3699, 2001. ISSN: 0021-8979. [doi:10.1063/1.1352676] Keyword(s): II-VI semiconductors, cadmium compounds, island structure, molecular beam epitaxial growth, reflection high energy electron diffraction, semiconductor epitaxial layers, semiconductor growth, semiconductor quantum dots, transmission electron microscopy, zinc compounds, 6865Hb, 8105Dz, 8107Ta, 8115Hi.


  85. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in In(x)Ga(1-x)As/GaAs$ Stranski-Krastanow layers}. Phys. Rev. B, 64(24):245334, December 2001. [doi:10.1103/PhysRevB.64.245334]


  86. A Rosenauer, D Van Dyck, M Arzberger, and G Abstreiter. Compositional analysis based on electron holography and a chemically sensitive reflection. Ultramicroscopy, 88(1):51-61, 2001. ISSN: 0304-3991. [WWW] [doi:10.1016/S0304-3991(00)00115-7] Keyword(s): Compositional analysis.


  87. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Investigation of In segregation in InAs/AlAs quantum-well structures. Appl. Phys. Lett., 79(26):4426-4428, December 2001. Keyword(s): segregation, InAs, In, As, InAs/AlAs, AlAs, Al, As, quantum-well.


  88. I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, Yu.G. Musikhin, A.P. Kartashova, A.S. Usikov, A.F. Tsatsul’nikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A.C. Plaut, A.A. Hoffmann, and D. Bimberg. Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots. Semiconductors, 34(4):481-487, 2000. ISSN: 1063-7826. [doi:10.1134/1.1188011]


  89. K.G. Chinyama, K.P. O'Donnell, A. Rosenauer, and D. Gerthsen. Morphology of ultrathin CdSe quantum confinement layers in ZnSe matrices. Journal of Crystal Growth, 203(3):362-370, 1999. ISSN: 0022-0248. [WWW] [doi:10.1016/S0022-0248(99)00099-8] Keyword(s): Morphology.


  90. A. Rosenauer and D. Gerthsen. Composition evaluation by the lattice fringe analysis method using defocus series. Ultramicroscopy, 76(1):49-60, 1999.


  91. E Schomburg, S Brandl, K.F Renk, N.N Ledentsov, V.M Ustinov, A.E Zhukov, A.R Kovsh, A.Yu Egorov, R.N Kyutt, B.V Volovik, P.S Kop'ev, Zh.I Alferov, A Rosenauer, D Litvinov, D Gerthsen, D.G Pavel'ev, and Y.I Koschurinov. Miniband transport in a semiconductor superlattice with submonolayer barriers. Physics Letters A, 262(4-5):396-401, 1999. ISSN: 0375-9601. [WWW] [doi:10.1016/S0375-9601(99)00612-X] Keyword(s): 85.30.Vw.


  92. A.F. Tsatsul’Nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maximov, A.Yu Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, P.S. Kop’Ev, Zh.I. Alferov, I.A. Kozin, M.V. Belousov, I.P. Soshnikov, P. Werner, D. Litvinov, U. Fischer, A. Rosenauer, and D. Gerthsen. Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition. Journal of Electronic Materials, 28(5):537-541, 1999. ISSN: 0361-5235. [doi:10.1007/s11664-999-0108-9] Keyword(s): Lasing, quantum dots, submonolayer, vertical correlation.


  93. Stephan Kaiser, Herbert Preis, Wolfgang Gebhardt, Oliver Ambacher, Helmut Angerer, Martin Stutzmann, Andreas Rosenauer, and Dagmar Gerthsen. Quantitative Transmission Electron Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al$_{ extbf{2}}$O$_{ extbf{3}}$(0001). Japanese Journal of Applied Physics, 37(Part 1, No. 1):84-89, 1998. [WWW] [doi:10.1143/JJAP.37.84]


  94. B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, and M. Stutzmann. Analysis of composition fluctuations on an atomic scale in Al(0.25)Ga(0.75)N by high-resolution transmission electron microscopy. Applied Physics Letters, 73(7):930-932, 1998. [WWW] [doi:10.1063/1.122041] Keyword(s): aluminium compounds, gallium compounds, wide band gap semiconductors, III-V semiconductors, stoichiometry, fluctuations, transmission electron microscopy, lattice constants, semiconductor heterojunctions, interface structure, semiconductor epitaxial layers.


  95. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Förster. Composition evaluation by lattice fringe analysis. Ultramicroscopy, 72:121-133, 1998. [doi:10.1016/S0304-3991(98)00002-3]


  96. A. Rosenauer, S. Kaiser, T. Reisinger, J. Zweck, W. Gebhardt, and D. Gerthsen. Digital analysis of high resolution transmission electron microscopy lattice images. Optik, 102:63-69, 1996.


  97. W.S. Kuhn, A. Lusson, B. Qu'Hen, C. Grattepain, H. Dumont, O. Gorochov, S. Bauer, K. Wolf, M. Wörz, T. Reisinger, A. Rosenauer, H.P. Wagner, H. Stanzl, and W. Gebhardt. The metal organic vapour phase epitaxy of ZnTe: III. Correlation of growth and layer properties. Progress in Crystal Growth and Characterization of Materials, 31(1-2):119-177, 1995. ISSN: 0960-8974. [WWW] [doi:10.1016/0960-8974(95)00018-6]


  98. S. Lankes, B. Hahn, C. Meier, F. Hierl, M. Kastner, A. Rosenauer, and W. Gebhardt. Photoreflectance measurements on ZnSe/ZnS0.25Se0.75SQW. physica status solidi (a), 152(1):123-131, 1995. ISSN: 1521-396X. [doi:10.1002/pssa.2211520113]


  99. A. Naumov, H. Stanzl, K. Wolf, A. Rosenauer, S. Lankes, and W. Gebhardt. Exciton recombination in ZnSexTe1−x/ZnTe {QWs} and ZnSexTe1−x epilayers grown by metalorganic vapour phase epitaxy. Journal of Crystal Growth, 138(1-4):595-600, 1994. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(94)90875-3]


  100. S. Bauer, A. Rosenauer, P. Link, W. Kuhn, J. Zweck, and W. Gebhardt. Misfit dislocations in epitaxial ZnTe/GaAs (001) studied by {HRTEM}. Ultramicroscopy, 51(1-4):221-227, 1993. ISSN: 0304-3991. [WWW] [doi:10.1016/0304-3991(93)90148-Q]


Conference articles
  1. C. Mahr, K. Müller-Caspary, A. Oelsner, A. Rosenauer, and P. Potapov. STEM strain measurement from a stream of diffraction patterns recorded on a pixel-free delay-line detector [Talk]. In EMAG conference 2016, Durham, UK, 2016.


  2. Knut Müller-Caspary, Florian F. Krause, Armand Béché, Martial Duchamp, Marco Schowalter, Stefan Löffler, Vadim Migunov, Florian Winkler, Martin Huth, Robert Ritz, Sebastian Ihle, Martin Simson, Henning Ryll, Heike Soltau, Lothar Strüder, Josef Zweck, Peter Schattschneider, Rafal Dunin-Borkowski, Johan Verbeeck, and Andreas Rosenauer. Measurement of Atomic Electric Fields by Scanning Transmission Electron Microscopy (STEM) Employing Ultrafast Detectors. In Microscopy and Microanalysis 2016, Columbus (OH/USA), [Invited Talk], volume 22, pages 484-485, July 24-28th 2016. Microscopy Society of America. [WWW] [doi:10.1017/S1431927616003275] Keyword(s): DPC, pnccd.


  3. Knut Müller-Caspary, Thorsten Mehrtens, Marco Schowalter, Tim Grieb, Andreas Rosenauer, Florian F. Krause, Christoph Mahr, and Pavel Potapov. ImageEval. A software for the processing, evaluation and acquisition of (S)TEM images. In European Microscopy Congress 2016, Lyon (F), [Poster IM03-286], 2016. [doi:10.1002/EMC2016.0677]


  4. Knut Müller-Caspary, Andreas Oelsner, and Pavel Potapov. STEM Strain Measurement From a Stream of Diffraction Patterns Recorded on a Pixel-Free Delay-Line Detector. In Microscopy and Microanalysis 2016, Columbus (OH/USA), [Poster], July 24-28th 2016.


  5. Knut Müller-Caspary, Andreas Oelsner, Pavel Potapov, and Thomas Schmidt. Analysis of strain and composition in GeSi/Si heterostructures by electron microscopy. In European Microscopy Congress 2016, Lyon (F), [Talk MS03-OP239], 2016. [doi:10.1002/EMC2016.0311]


  6. Knut Müller-Caspary, Oliver Oppermann, Tim Grieb, Andreas Rosenauer, Marco Schowalter, Florian F. Krause, Thorsten Mehrtens, Pavel Potapov, Andreas Beyer, and Kerstin Volz. Angle-resolved Scanning Transmission Electron Microscopy (ARSTEM) for materials analysis. In European Microscopy Congress 2016, Lyon (F), [Poster IM06-350], 2016. [doi:10.1002/EMC2016.0259]


  7. Dan Zhou, Knut Müller-Caspary, Wilfried Sigle, Florian F. Krause, Andreas Rosenauer, and Peter van Aken. Sample tilt effects on atom column position determination in ABF-STEM imaging. In Microscopy and Microanalysis Conference M&M 2016, Columbus (Ohio, USA), session A15.1, [Talk 19], July 24-28th 2016.


  8. Florian F. Krause, Jan-Philipp Ahl, Darius Tytko, Pyuck-Pa Choi, Ricardo Egoavil, Marco Schowalter, Thorsten Mehrtens, Knut Müller-Caspary, Johan Verbeeck, Dierk Raabe, Joachim Hertkorn, Karl Engl, and Andreas Rosenauer. Homogeneity and Composition of MOVPE-Grown AlInGaN: A Nanostructure Multiprobe Study (Poster). In Proceedings of the Microscopy Conference 2015 (MC 2015), Göttingen (D), September 6-11th 2015.


  9. Florian Fritz Krause, Andreas Rosenauer, Knut Müller-Caspary, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. In Frontiers of Electron Microscopy in Materials Science (FEMMS) 2015, Lake Tahoe (CA/USA), [Invited Talk], September 13-18th 2015.


  10. Florian F. Krause, M. Schowalter, J.P. Ahl, J. Hertkorn, R. Egoavil, d. Tytko, P. P. Choi, T. Mehrtens, K. Müller-Caspary, D. Raabe, J. Verbeeck, K. Engl, and A. Rosenauer. Homogeneity and composition of MOVPE grown AlInGaN: a multiprobe nanostructure study. In Proceedings of Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK), 2015.


  11. Johannes Ledig, Tilman Schimpke, Gregor Scholz, Florian F. Krause, Andreas Rosenauer, Martin Strassburg, Hergo-Heinrich Wehmann, and Andreas Waag. Comparison of electroluminescence and IV characteristics along a GaN based core-shell LED taken by point contacts inside a CL-SEM (Poster). In Proceedings of the Microscopy Conference 2015 (MC 2015), Göttingen (D), 2015.


  12. C. Mahr, K. Müller, M. Schowalter, T. Mehrtens, T. Grieb, F.F. Krause, D. Erben, and A. Rosenauer. Analysis and improvement of precision and accuracy of strain measurements by convergent nano-beam electron diffraction (SANBED). In Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK) [Talk], volume Session 3b, Tue, March 31st, 2015.


  13. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. A quantum mechanical approach to electron picodiffraction reveals atomic electric fields. In Materials Research Society Spring Meeting 2015 (MRS 2015), San Francisco (USA) [Talk], volume Symposium ZZ, Talk 2.02, 2015.


  14. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields. In Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK) [Talk], volume Session 4b (Wed, April 1st), 2015.


  15. Knut Müller-Caspary, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Oliver Oppermann, Tim Grieb, Andreas Oelsner, Pavel Potapov, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields. In Frontiers of Electron Microscopy in Materials Science (FEMMS) 2015, Lake Tahoe (CA/USA), [Invited Talk], September 13-18th 2015.


  16. Andreas Rosenauer, Florian F. Krause, Knut Müller, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. In Materials Research Society Spring Meeting 2015 (MRS 2015), San Francisco (USA) [Talk], volume Symposium ZZ, Talk 2.02, 2015.


  17. Josef Zweck, Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Peter Schattschneider, and Andreas Rosenauer. Exploring the space between atoms: Interatomic electric fields imaged by STEM-DPC. In Multinational Congress on Microscopy (MCM) 2015, Eger (Hungary) [Invited talk], 2015.


  18. Jan-Philipp Ahl, Joachim Hertkorn, Anna Nirschl, Michael Benedikt, Bernhard Holländer, Florian F. Krause, Pyuck-Pa Choi, Dierk Raabe, and Andreas Rosenauer. On the possibility to use quaternary AlInGaN for polarization engineering (Talk). In Proceedings of the International Conference on Metalorganic Vapor Phase Epitaxy 2014 (ICMOVPE 17), Lausanne (CH), 2014.


  19. C. Mahr, K. Müller, D. Erben, M. Schowalter, J. Zweck, K. Volz, and A. Rosenauer. Strain Analysis by Nano-Beam Electron Diffraction (SANBED) in semiconductor nanostructures. In 18th International Microscopy Congress (IMC) [Poster IT-9-P-3029], 2014.


  20. Knut Müller, Henning Ryll, Ivan Ordavo, Sebastian Ihle, Martin Huth, Martin Simson, Josef Zweck, Kerstin Volz, Heike Soltau, Andreas Rosenauer, Pavel Potapov, Marco Schowalter, Lothar Strüder, Christoph Mahr, and Daniel Erben. Strain Analysis from Nano-beam Electron Diffraction Patterns Recorded on Direct Electron Charge-coupled Devices. In Microscience Microscopy Congress, MMC 2014, Manchester (UK), July, 2014 [invited talk PS3.1.4], 2014.


  21. Henning Ryll, Robert Hartmann, Martin Huth, Sebastian Ihle, Knut Müller, Andreas Rosenauer, Julia Schmidt, Martin Simson, Heike Soltau, and Lothar Strüder. New Operation Modes with the PNCCD TEM Camera for Versatile, Direct Electron Imaging in Transmission Electron Microscopy Applications. In Microscience Microscopy Congress, MMC 2014, Manchester (UK), July, 2014 [Poster 1051], 2014.


  22. T. Schimpke, M. Binder, B. Galler, J. Hartmann, A. Waag, F. F. Krause, T. Mehrtens, A. Rosenauer, M. Müller, S. Metzner, P. Veit, F. Bertram, J. Christen, and H-J. Lugauer M. Strassburg1. Control of emission wavelength gradient along the m-plane facet of high aspect-ratio core-shell InGaN/GaN microrod LED structures (Talk). In Proceedings des Arbeitskreistreffens der Deutsche Gesellschaft für Kristallwachstum und Kristallzüchtung e.V. Arbeitskreis Epitaxie von III-V-Halbleitern 2014(AK III-V DGKK 29), Magdeburg (D), 2014.


  23. Tim Grieb, Knut Müller, Emanuel Cadel, Rafael Fritz, Nils Neugebohrn, Etienne Talbot, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Chemical composition analysis of dilute GaNAs and InGaNAs by high-angle annular dark field STEM. In International Conference on Electron Microscopy and XXIV Annual Meeting of the Electron Microscope Society of India (EMSI) 2013, Kolkata (India) [Talk], 2013.


  24. Marco Schowalter, Ingo Stoffers, Florian Krause, Thorsten Mehrtens, Knut Müller, Malte Fandrich, Timo Aschenbrenner, Detlef Hommel, and Andreas Rosenauer. Composition determination using HAADF-STEM in AlGaN/GaN heterostructures revisited. In Microscopy Conference 2013 (MC 2013, Regensburg) [Poster Presentation], volume 1: Instrumentation and Methods, pages IM.1.P028, 2013.


  25. Ingo Stoffers, Marco Schowalter, Florian Krause, Thorsten Mehrtens, Knut Müller, Malte Fandrich, Timo Aschenbrenner, Detlef Hommel, and Andreas Rosenauer. Composition quantification from HAADF-STEM in AlGaN/GaN heterostructures revisited. In Microscopy of Semiconducting Materials 2013 (MSMX VIII),Oxford (UK) [Poster Presentation], 2013.


  26. Timo Aschenbrenner, Heiko Dartsch, Elahe Zakizadeh, Carsten Laurus, Stephan Figge, Alexander Würfel, Thorsten Mehrtens, Andreas Rosenauer, and Detlef Hommel. Enhanced Carrier Confinement in InGaN Quantums Dots by Al(In,Ga)N Barrier Layers. In ICMOVPE - XVI Busan, (Korea) [Talk], 2012.


  27. Malte Fandrich, Timo Aschenbrenner, Stephan Figge, Thorsten Mehrtens, Andreas Rosenauer, and Detlef Hommel. AlInN/GaN-heterostructures for sensing applications. In Verhandlungen der DPG, number HL 73.1, pages 245, 2012.


  28. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A method to avoid strain field induced artifacts in 2D chemical mapping of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis [Talk 595], volume 18, pages 1028-1029, 2012. [doi:10.1017/S143192761200699X]


  29. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain analysis by nano-beam electron diffraction (SANBED) in semiconductor nanostructures [Invited talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, pages 36, 2012. Keyword(s): SANBED.


  30. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor nanostructures by convergent electron nanoprobe diffraction [Talk]. In Verhandlungen der Deutschen Physikalischen Gesellschaft, volume 47, pages 312, 2012.


  31. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Alexander Würfel, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Lars Hoffmann, Andreas Hangleiter, S. A. Gerstl, Pyuck-Pa Choi, and Dirk Raabe. Measurement of composition and strain in InGaN quantum dots by STEM [Plenary talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, EMSI2012, Bengaluru (Indien), July 4, 2012 [invited talk], pages 25, 2012.


  32. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Measurement of composition and strain by STEM. In Microscopy and Microanalysis 2012 (M&M2012), Phoenix, Arizona, July 29-August 2 [Invited talk], volume 18, pages 1804-1805, 2012. [doi:10.1017/S1431927612010872]


  33. Heiko Dartsch, Christian Tessarek, Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. Electroluminescence from InGaN quantum dots in a monolithically grown GaN/AlInN cavity. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.


  34. A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, P. V. Satyam, S. Bley, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, J. Gutowski, S. S. A. Gerstl, P. P. Choi, and D. Raabe. Composition mapping in InGaN with quantitative STEM Z-contrast imaging. In ICNS Glasgow 2011 [Invited talk], 2011.


  35. M. Schowalter, M. Tewes, K. Frank, R. Imlau, A. Rosenauer, H.S. Lee, O.G. Rastelli, M. Schmidt, M. Tavast, T. Leinonen, and M. Guina. Investigation of diffusion in AlAs/GaAs distributed Bragg reflectors using HAADF STEM imaging. In MSM 2011 Cambridge, U.K. [poster] poster P2.12, 2011.


  36. W. Van den Broek, S. Van Aert, A. Rosenauer, and D. Van Dyck. Atomic resolution tomographic reconstruction algorithm for particles of nanometer size. In poster IM3.P146 MC 2011, Kiel [poster], 2011.


  37. T. M. Gesing, M. Schowalter, C. Weidenthaler, A. Rosenauer, H. Schneider, and R.X. Fischer. Synthesis and properties of Mullite-type Bi(1-x)Sr(x)2M1 4OM2 9-x/2 (M=Al, Ga,Fe). In presented at BMEA, Taiwan (2010), 2010.


  38. Vincenzo Grillo, Frank Glas, Knut Müller, and Andreas Rosenauer. Simulation of STEM-HAADF microscopy images for the chemical quantification in InGaAsN alloys. In Transnational Access Meeting (TAM), Helsinki (Finland) [Poster presentation], 2010.


  39. Moritz Speckmann, Thomas Schmidt, Jan Ingo Flege, Inga Heidmann, Andre Kubelka, Locatelli A., T. O. Mentes, M. A. Nino, Knut Müller, Andreas Rosenauer, and Jens Falta. Facets, mazes, slabs, and nanowires: silver-mediated germanium growth on silicon surfaces. In 37th International conference on Vacuum Ultraviolet and X-ray Physics (VUVX), Vancouver (Canada) [Talk], 2010.


  40. V. Srivastava, K.B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, J. Eckert, A. Rosenauer, and H.-W. Zoch. Novel microstructural characteristics and properties of spray formed Al-RE-TM based alloys. In Proceedings of the 4th International conference on spray deposition and melt atomization SDMA2009 and 7th international conference on spray forming ICSF7 held at University of Bremen during September 07-09, 2009, 2009.


  41. H. Dartsch, S. Figge, T. Aschenbrenner, A. Pretorius, A. Rosenauer, and D. Hommel. Strain compensated AlGaN/GaN-Bragg-reflectors with high Al content grown by MOVPE. In IC-MOVPE, 1.-6. June 2008, 2008.


  42. A. Pretorius, T. Aschenbrenner, H. Dartsch, S. Figge, D. Hommel, and A. Rosenauer. Transmission electron microscopical investigation of AlGaN/GaN distributed Bragg reflectors. In IWN 2008, 6-10 Oktober, Montreaux, Schweiz Physica Status Solidi C 6, S680-S683, 2008.


  43. A. Pretorius, A. Rosenauer, T. Aschenbrenner, H. Dartsch, S. Figge, and D. Hommel. TEM analyses of microstructure and composition of Al(x)Ga(1-x)N/GaN distributed Bragg reflectors. In S. Richter, A. Schwedt (Eds.): EMC 2008, Vol. 2: Materials Science, pp. 81-82, DOI: 10.1007/978-3-540-85226-1_41, 2008.


  44. M. Beer, K. Engl, J. Zweck, A. Able, M. Wegscheider, M. Schowalter, and A. Rosenauer. Quantative TEM Analysis of the composition of InGaN/AlGaN layers: Selection of the proper imaging conditions. In Presented at Microscopy Conference Davos (2005), 2005.


  45. M. Melzer, Marco Schowalter, Andreas Rosenauer, D. Gerthsen, and J. P. Reithmaier. Untersuchung der Segregation von In in InAs/AlAs Heterostrukturen. In DPG Frühjahrstagung, Dresden (Germany) Verhandl. DPG (VI) 38, 1, 186, 2003.


  46. M. Efremov, V. Volodin, V.A. Sachkov, V. Preobrazhenskii, B. Semyagin, N. Ledentsov, V. Ustinov, I. Soshnikov, D. Litvinov, A. Rosenauer, and D. Gerthsen. RAMAN study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces. In Microelectron. J. 33, 535-40, 2002.


  47. Marco Schowalter, Andreas Rosenauer, Dagmar Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Untersuchung der Segregation von In in InAs/AlAs Heterostrukturen. In DPG Frühjahrstagung, Regensburg (Germany) Verhandl. DPG (VI) 37, 1, 163, 2002.


  48. M. Schowalter, B. Neubauer, A. Rosenauer, D. Gerthsen, O. Schön, and M. Heuken. MOCVD growth of Ga(Al)N/InGaN/Ga(Al)N-Heterostructures: Influence of the Buffer Layer Al-Concentration an d Growth Duration on the In-Incorporation in InGaN. In MRS spring meeting 2001, San Francisco, 2001.


  49. E. Schomburg, S. Brandl, S. Winnerl, K.F. Renk, N. N. Ledentsov, V. Ustinov, A. Zhukov, P.S. Kopev, H.W. Hubers, J. Schubert, H.P. Roser, A. Rosenauer, D. Litvinov, D. Gerthsen, and J.M. Chamberlain. Miniband transport in a GaAs/AlAs superlattice with submonolayer barriers in a static and THz electric field,. In Ninth International Conference on Modulated Semiconductor Structures. MSS9 / Japan Soc. Appl. Phys. Physica E 7, 814-18, 2000.


  50. B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, M. Stutzmann, M. Albrecht, and H.P. Strunk. Analysis of composition fluctuations in Al(x)Ga(1-x)N. In E-MRS 1998 Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials. - 16-19 June 1998 Mater. Sci. Eng. B 59, 182-5, 1999.


Miscellaneous
  1. Moritz Tewes. Quantitative STEM-Untersuchung von Germanium-Silizium-Heterostrukturen (Quantitative STEM investigations of germanium-silicon heterostructures). Master's thesis, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany, February 2013.


  2. Dennis Zillmann. Bestimmung der Modulationstransferfunktion einer CCD-Kamera und Kontrasttransfer in der Transmissionselektronenmikroskopie (Determination of the modulation transfer function of a CCD camera and contrast transfer in the field of transmission electron microscopy). Master's thesis, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany, October 2011.


  3. Thorsten Mehrtens. Bestimmung von Segregationsprofilen in InGaAs/GaAs-Quantentrögen mittels konventioneller und Rastertransmissionselektronenmikroskopie. Master's thesis, Universität Bremen, 2009.


  4. Knut Müller. Bestimmung von Strukturfaktoren für Galliumarsenid mittels Elektronenbeugung - Entwicklung und Test einer Messmethode (Determination of structure factors for gallium arsenide by electron diffraction - development and test of a measurement method). Diplomarbeit, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany, September 2007.



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