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Publications about 'aluminium compounds'
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Articles in journal, book chapters
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T. Aschenbrenner,
H. Dartsch,
C. Kruse,
M. Anastasescu,
M. Stoica,
M. Gartner,
A. Pretorius,
A. Rosenauer,
Thomas Wagner,
and D. Hommel.
Optical and structural characterization of AlInN layers for optoelectronic applications.
J. Appl. Phys.,
108(6):063533,
2010.
[WWW]
[doi:10.1063/1.3467964]
Keyword(s): aluminium compounds,
annealing,
distributed Bragg reflectors,
extinction coefficients,
III-V semiconductors,
indium compounds,
MOCVD coatings,
refractive index,
semiconductor epitaxial layers,
surface morphology,
surface roughness,
transmission electron microscopy,
vapour phase epitaxial growth,
wide band gap semiconductors,
X-ray diffraction.
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M. Schowalter,
A. Rosenauer,
D. Lamoen,
P. Kruse,
and D. Gerthsen.
Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold.
Applied Physics Letters,
88(23):232108-232108-3,
2006.
ISSN: 0003-6951.
[doi:10.1063/1.2210453]
Keyword(s): APW calculations,
II-VI semiconductors,
III-V semiconductors,
ab initio calculations,
aluminium compounds,
cadmium compounds,
density functional theory,
electric potential,
gallium compounds,
gold,
indium compounds,
monolayers,
wide band gap semiconductors,
zinc compounds,
7361Ey,
7361Ga.
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D. Litvinov,
A. Rosenauer,
D. Gerthsen,
N. N. Ledentsov,
D. Bimberg,
G. A. Ljubas,
V. V. Bolotov,
V. A. Volodin,
M. D. Efremov,
V. V. Preobrazhenskii,
B. R. Semyagin,
and I. P. Soshnikov.
Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface.
Applied Physics Letters,
81(6):1080-1082,
2002.
[WWW]
[doi:10.1063/1.1497994]
Keyword(s): gallium arsenide,
aluminium compounds,
III-V semiconductors,
semiconductor quantum wires,
semiconductor epitaxial layers,
semiconductor superlattices,
transmission electron microscopy,
self-assembly,
photoluminescence.
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B. Neubauer,
A. Rosenauer,
D. Gerthsen,
O. Ambacher,
and M. Stutzmann.
Analysis of composition fluctuations on an atomic scale in Al(0.25)Ga(0.75)N by high-resolution transmission electron microscopy.
Applied Physics Letters,
73(7):930-932,
1998.
[WWW]
[doi:10.1063/1.122041]
Keyword(s): aluminium compounds,
gallium compounds,
wide band gap semiconductors,
III-V semiconductors,
stoichiometry,
fluctuations,
transmission electron microscopy,
lattice constants,
semiconductor heterojunctions,
interface structure,
semiconductor epitaxial layers.
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Last modified: Wed Sep 21 12:45:10 2016
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