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Publications about 'atomic force microscopy'
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Articles in journal, book chapters
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Marc Sauerbrey,
Jan Höcker,
Meikel Wellbrock,
Marco Schowalter,
Jon-Olaf Krisponeit,
Knut Müller-Caspary,
Andreas Rosenauer,
Gang Wei,
Lucio Colombi Ciacchi,
Jens Falta,
and Jan Ingo Flege.
Ultrasmooth Ru(0001) Films as Templates for Ceria Nanoarchitectures.
Crystal Growth & Design,
16(8):4216-4224,
2016.
[doi:10.1021/acs.cgd.6b00192]
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Malte Fandrich,
Thorsten Mehrtens,
Timo Aschenbrenner,
Thorsten Klein,
Martina Gebbe,
Stephan Figge,
Carsten Kruse,
Andreas Rosenauer,
and Detlef Hommel.
Nitride based heterostructures with Ga- and N-polarity for sensing applications.
Journal of Crystal Growth,
370(0):68-73,
2013.
ISSN: 0022-0248.
[WWW]
Keyword(s): A1. Characterization,
A3. Metalorganic vapor phase epitaxy,
A3. Molecular beam epitaxy,
B1. Nitrides,
B3. Sensors.
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T. Aschenbrenner,
H. Dartsch,
C. Kruse,
M. Anastasescu,
M. Stoica,
M. Gartner,
A. Pretorius,
A. Rosenauer,
Thomas Wagner,
and D. Hommel.
Optical and structural characterization of AlInN layers for optoelectronic applications.
J. Appl. Phys.,
108(6):063533,
2010.
[WWW]
[doi:10.1063/1.3467964]
Keyword(s): aluminium compounds,
annealing,
distributed Bragg reflectors,
extinction coefficients,
III-V semiconductors,
indium compounds,
MOCVD coatings,
refractive index,
semiconductor epitaxial layers,
surface morphology,
surface roughness,
transmission electron microscopy,
vapour phase epitaxial growth,
wide band gap semiconductors,
X-ray diffraction.
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D. Litvinov,
A. Rosenauer,
D. Gerthsen,
P. Kratzert,
M. Rabe,
and F. Henneberger.
Influence of the growth procedure on the Cd distribution in CdSe/ZnSe heterostructures: Stranski--Krastanov versus two-dimensional islands.
Applied Physics Letters,
81(4):640-642,
2002.
[WWW]
[doi:10.1063/1.1496133]
Keyword(s): cadmium compounds,
zinc compounds,
II-VI semiconductors,
semiconductor heterojunctions,
molecular beam epitaxial growth,
semiconductor growth,
island structure,
interface structure,
atomic force microscopy,
transmission electron microscopy,
chemical interdiffusion.
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D. Luerssen,
R. Bleher,
H. Richter,
Th. Schimmel,
H. Kalt,
A. Rosenauer,
D. Litvinov,
A. Kamilli,
D. Gerthsen,
K. Ohkawa,
B. Jobst,
and D. Hommel.
Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures.
Applied Physics Letters,
75(25):3944-3946,
1999.
[WWW]
[doi:10.1063/1.125502]
Keyword(s): zinc compounds,
magnesium compounds,
II-VI semiconductors,
wide band gap semiconductors,
semiconductor quantum wells,
stacking faults,
defect states,
interface states,
interface structure,
photoluminescence,
atomic force microscopy,
transmission electron microscopy,
excitons.
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Last modified: Wed Sep 21 12:45:10 2016
Author: knut.
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