1. Jochen A. H. Dreyer, Suman Pokhrel, Johannes Birkenstock, Miguel G. Hevia, Marco Schowalter, Andreas Rosenauer, Atsushi Urakawa, Wey Yang Teoh, and Lutz Madler. Decrease of the required dopant concentration for [small delta]-Bi2O3 crystal stabilization through thermal quenching during single-step flame spray pyrolysis. CrystEngComm, 18:2046-2056, 2016. [doi:10.1039/C5CE02430G]



2. A. Schneider, K. Sebald, A. Dev, K. Frank, A. Rosenauer, and T. Voss. Towards optical hyperdoping of binary oxide semiconductors. Journal of Applied Physics, 113(14):143512, 2013. [WWW] [doi:10.1063/1.4801531] Keyword(s): antimony, high-frequency effects, high-speed optical techniques, II-VI semiconductors, nanostructured materials, semiconductor doping, surface structure, wide band gap semiconductors.



3. Thorsten M. Gesing, Marco Schowalter, Claudia Weidenthaler, M. Mangir Murshed, Gwilherm Nenert, Cecilia B. Mendive, Mariano Curti, Andreas Rosenauer, J.-Christian Buhl, Hartmut Schneider, and Reinhard X. Fischer. Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons. J. Mater. Chem., 22:18814-18823, 2012. [doi:10.1039/C2JM33208F]



4. T. Aschenbrenner, G. Kunert, W. Freund, C. Kruse, S. Figge, M. Schowalter, C. Vogt, J. Kalden, K. Sebald, A. Rosenauer, J. Gutowski, and D. Hommel. Catalyst free self-organized grown high-quality GaN nanorods. physica status solidi (b), 248(8):1787-1799, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147148] Keyword(s): MBE, MOVPE, nanorods, nitrides, TEM, III-V semiconductors.



5. Th. Schmidt, M. Siebert, J. I. Flege, S. Figge, S. Gangopadhyay, A. Pretorius, T.-L. Lee, J. Zegenhagen, L. Gregoratti, A. Barinov, A. Rosenauer, D. Hommel, and J. Falta. Mg and Si dopant incorporation and segregation in GaN. physica status solidi (b), 248(8):1810-1821, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201046531] Keyword(s): defects, dopants, photoelectron microscopy, segregation, X-ray standing waves.



6. Jianping Xiao, Agnieszka Kuc, Suman Pokhrel, Marco Schowalter, Satyam Parlapalli, Andreas Rosenauer, Thomas Frauenheim, Lutz Mädler, Lars G. M. Pettersson, and Thomas Heine. Evidence for Fe2+ in Wurtzite Coordination: Iron Doping Stabilizes ZnO Nanoparticles. Small, 7(20):2879-2886, 2011. ISSN: 1613--6829. [doi:10.1002/smll.201100963] Keyword(s): density functional theory, doping, iron, nanoparticles, zinc oxide.



7. Saji George, Suman Pokhrel, Tian Xia, Benjamin Gilbert, Zhaoxia Ji, Marco Schowalter, Andreas Rosenauer, Robert Damoiseaux, Kenneth A. Bradley, Lutz Mädler, and André E. Nel. Use of a Rapid Cytotoxicity Screening Approach To Engineer a Safer Zinc Oxide Nanoparticle through Iron Doping. ACS Nano, 4(1):15-29, 2010. Note: PMID: 20043640. [doi:10.1021/nn901503q]



8. Th. Schmidt, M. Siebert, A. Pretorius, S. Gangopadhyay, S. Figge, J.I. Flege, L. Gregoratti, A. Barinov, D. Hommel, and J. Falta. Spectro-microscopy of Si doped GaN films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 246(1):79-84, 2006. Note: Synchrotron Radiation and Materials Science Proceedings of the E-MRS 2005 Symposium O on Synchrotron Radiation and Materials Science E-MRS 2005 Symposium O. ISSN: 0168-583X. [WWW] [doi:10.1016/j.nimb.2005.12.018] Keyword(s): Photoemission microscopy.



9. Meng-Ku Chen, Yung-Chen Cheng, Jiun-Yang Chen, Cheng-Ming Wu, C.C. Yang, Kung-Jen Ma, Jer-Ren Yang, and Andreas Rosenauer. Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells. Journal of Crystal Growth, 279(1-2):55-64, 2005. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2005.02.018] Keyword(s): A1. Segregation.



10. Yung-Chen Cheng, En-Chiang Lin, Cheng-Ming Wu, C.C. Yang, Jer-Ren Yang, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, L.C. Chen, Chang-Chi Pan, and Jen-Inn Chyi. Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions. Applied Physics Letters, 84(14):2506-2508, 2004. ISSN: 0003-6951. [doi:10.1063/1.1690872] Keyword(s): III-V semiconductors, gallium compounds, indium compounds, photoluminescence, quantum confined Stark effect, semiconductor doping, semiconductor quantum wells, silicon, wide band gap semiconductors, 6172Vv, 6865Fg, 7855Cr, 7867De.

1. T. M. Gesing, M. Schowalter, C. Weidenthaler, M. M. Murshed, A. Rosenauer, J.C. Buhl, H. Schneider, and R. X. Schneider. Mullite-type dibismuth nonaoxometallates-(III): the effect of Strontium doping. In European crystallographic meeting, July 29 - September 11, 2012 Bergen, Norway, 2012.

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