1. A. Rosenauer. Transmission Electron Microscopy of Semiconductor Nanostructures An Analysis of Composition and Strain State. Springer Tracts in Modern Physics 182 Springer-Verlag Berlin Heidelberg, 2003 ISBN 3-540-00414-9, 2003.

1. Knut Müller. Transmission electron microscopy of InGaNAs nanostructures using ab-initio structure factors for strain-relaxed supercells. PhD thesis, Universität Bremen, May 2011.

1. T. Aschenbrenner, M. Schowalter, T. Mehrtens, K. Müller-Caspary, M. Fikry, D. Heinz, I. Tischer, M. Madel, K. Thonke, D. Hommel, F. Scholz, and A.ahr Rosenauer. Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy. Journal of Applied Physics, 119(17), 2016. [doi:10.1063/1.4948385]



2. Daniel Carvalho, Knut Müller-Caspary, Marco Schowalter, Tim Grieb, Thorsten Mehrtens, Andreas Rosenauer, Rafael Ben, Teresa Garcìa, Andrés Redondo-Cubero, Katharina Lorenz, Bruno Daudin, and Francisco M. Morales. Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction. Scientific Reports, 6:28459, June 2016. [doi:10.1038/srep28459] Keyword(s): DPC, strain, NBD, SANBED, nano-beam electron diffraction, polarization, polarisation, piezoelectric.



3. Florian F. Krause, Marco Schowalter, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Effects of instrument imperfections on quantitative scanning transmission electron microscopy. Ultramicroscopy, 161:146-160, 2016. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.10.026] Keyword(s): TEM.



4. Knut Müller-Caspary, Florian F. Krause, Tim Grieb, Stefan Löffler, Marco Schowalter, Armand Béché, Vincent Galioit, Dennis Marquardt, Josef Zweck, Peter Schattschneider, Johan Verbeeck, and Andreas Rosenauer. Measurement of atomic electric fields and charge densities from average momentum transfers using scanning transmission electron microscopy. Ultramicroscopy, (in print), 2016. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2016.05.004] Keyword(s): TEM.



5. H. Ryll, M. Simson, R. Hartmann, P. Holl, M. Huth, S. Ihle, Y. Kondo, P. Kotula, A. Liebel, K. Müller-Caspary, A. Rosenauer, R. Sagawa, J. Schmidt, H. Soltau, and L. Strüder. A pnCCD-based, fast direct single electron imaging camera for TEM and STEM. Journal of Instrumentation, 11(04):P04006, 2016. [WWW]



6. Marc Sauerbrey, Jan Höcker, Meikel Wellbrock, Marco Schowalter, Jon-Olaf Krisponeit, Knut Müller-Caspary, Andreas Rosenauer, Gang Wei, Lucio Colombi Ciacchi, Jens Falta, and Jan Ingo Flege. Ultrasmooth Ru(0001) Films as Templates for Ceria Nanoarchitectures. Crystal Growth & Design, 16(8):4216-4224, 2016. [doi:10.1021/acs.cgd.6b00192]



7. P. S. Sokolov, M. Yu. Petrov, T. Mehrtens, K. Müller-Caspary, A. Rosenauer, D. Reuter, and A. D. Wieck. Reconstruction of nuclear quadrupole interaction in (In,Ga)As/GaAs quantum dots observed by transmission electron microscopy. Phys. Rev. B, 93:045301, January 2016. [doi:10.1103/PhysRevB.93.045301]



8. Florian F. Krause, Jan-Philipp Ahl, Darius Tytko, Pyuck-Pa Choi, Ricardo Egoavil, Marco Schowalter, Thorsten Mehrtens, Knut Müller-Caspary, Johan Verbeeck, Dierk Raabe, Joachim Hertkorn, Karl Engl, and Andreas Rosenauer. Homogeneity and composition of AlInGaN: A multiprobe nanostructure study. Ultramicroscopy, 156(0):29-36, 2015. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.04.012] Keyword(s): HAADF STEM.



9. Knut Müller-Caspary, Andreas Oelsner, and Pavel Potapov. Two-dimensional strain mapping in semiconductors by nano-beam electron diffracion employing a delay-line detector. Applied Physics Letters, 107:072110, 2015. [doi:10.1063/1.4927837]



10. Suman Pokhrel, Johannes Birkenstock, Arezoo Dianat, Janina Zimmermann, Marco Schowalter, Andreas Rosenauer, Lucio Colombi Ciacchi, and L. Madler. In situ high temperature X-ray diffraction, transmission electron microscopy and theoretical modeling for the formation of WO3 crystallites. CrystEngComm, 17:6985-6998, 2015. [doi:10.1039/C5CE00526D]



11. M. Dries, S. Hettler, B. Gamm, E. Müller, W. Send, K. Müller, A. Rosenauer, and D. Gerthsen. A nanocrystalline Hilbert phase-plate for phase-contrast transmission electron microscopy. Ultramicroscopy, 139(0):29-37, 2014. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2014.01.002] Keyword(s): Transmission electron microscopy.



12. Tim Grieb, Knut Müller, Emmanuel Cadel, Andreas Beyer, Marco Schowalter, Etienne Talbot, Kerstin Volz, and Andreas Rosenauer. Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM. Microscopy and Microanalysis, 20:1740, 9 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614013051]



13. Dominik Heinz, Mohamed Fikry, Timo Aschenbrenner, Marco Schowalter, Tobias Meisch, Manfred Madel, Florian Huber, Matthias Hocker, Manuel Frey, Ingo Tischer, Benjamin Neuschl, Thorsten Mehrtens, Knut Müller, Andreas Rosenauer, Detlef Hommel, Klaus Thonke, and Ferdinand Scholz. GaN tubes with coaxial non- and semipolar GaInN quantum wells. Phys. Status Solidi (c), 11:648-651, 2014.



14. H. Kauko, B. O. Fimland, T. Grieb, A. M. Munshi, K. Müller, A. Rosenauer, and A. T. J. van Helvoort. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires. Journal of Applied Physics, 116(14):144303, 2014. [doi:10.1063/1.4896904]



15. H. Kauko, T. Grieb, A. M. Munshi, K. Mller, A. Rosenauer, B. O. Fimland, and A. T. J. van Helvoort. The Outward Diffusion of Sb during Nanowire Growth Studied by Quantitative High-Angle Annular Dark Field Scanning Transmission Electron Microscopy. Microscopy and Microanalysis, 20:186-187, 8 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614002657]



16. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Atomic electric fields revealed by a quantum mechanical approach to electron picodiffraction. Nature Communications, 5:5653:1-8, December 2014. [doi:10.1038/ncomms6653] Keyword(s): DPC, STEM, electric field.



17. Andreas Rosenauer, Florian F. Krause, Knut Müller, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. Phys. Rev. Lett., 113:096101, August 2014. [doi:10.1103/PhysRevLett.113.096101]



18. Duggi V. Sridhara Rao, Ramachandran Sankarasubramanian, Kuttanellore Muraleedharan, Thorsten Mehrtens, Andreas Rosenauer, and Dipankar Banerjee. Quantitative Strain and Compositional Studies of InGaAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques. Microscopy and Microanalysis, 20:1262-1270, 8 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614000762]



19. Malte Fandrich, Thorsten Mehrtens, Timo Aschenbrenner, Thorsten Klein, Martina Gebbe, Stephan Figge, Carsten Kruse, Andreas Rosenauer, and Detlef Hommel. Nitride based heterostructures with Ga- and N-polarity for sensing applications. Journal of Crystal Growth, 370(0):68-73, 2013. ISSN: 0022-0248. [WWW] Keyword(s): A1. Characterization, A3. Metalorganic vapor phase epitaxy, A3. Molecular beam epitaxy, B1. Nitrides, B3. Sensors.



20. Tim Grieb, Knut Müller, Rafael Fritz, Vincenzo Grillo, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Quantitative chemical evaluation of dilute GaNAs using ADF STEM: Avoiding surface strain induced artifacts. Ultramicroscopy, 129(0):1-9, 2013. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2013.02.006] Keyword(s): Quantitative.



21. L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, M. Schowalter, T. Mehrtens, A Rosenauer, and A. Hangleiter. Atomics scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content. Applied Physics Letters, 102:102110, 2013. [doi:10.1063/1.4795623]



22. H. Kauko, T. Grieb, R. Bjørge, M. Schowalter, A.M. Munshi, H. Weman, A. Rosenauer, and A.T.J. van Helvoort. Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM. Micron, 44(0):254-260, 2013. ISSN: 0968-4328. [WWW] [doi:10.1016/j.micron.2012.07.002] Keyword(s): HAADF-STEM.



23. Florian F. Krause, Knut Müller, Dennis Zillmann, Jacob Jansen, Marco Schowalter, and Andreas Rosenauer. Comparison of intensity and absolute contrast of simulated and experimental high-resolution transmission electron microscopy images for different multislice simulation methods. Ultramicroscopy, 134(0):94-101, 2013. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2013.05.015] Keyword(s): Stobbs factor.



24. Fabian Meder, Julia Wehling, Artur Fink, Beate Piel, Kaibo Li, Kristian Frank, Andreas Rosenauer, Laura Treccani, Susan Koeppen, Andreas Dotzauer, and Kurosch Rezwan. The role of surface functionalization of colloidal alumina particles on their controlled interactions with viruses. Biomaterials, 34(17):4203-4213, 2013. ISSN: 0142-9612. [WWW] [doi:10.1016/j.biomaterials.2013.02.059] Keyword(s): Virus-material interaction.



25. Thorsten Mehrtens, Knut Müller, Marco Schowalter, Dongzhi Hu, Daniel M. Schaadt, and Andreas Rosenauer. Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images. Ultramicroscopy, 131(0):1-9, 2013. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2013.03.018] Keyword(s): HAADF-STEM.



26. T. Mehrtens, M. Schowalter, D. Tytko, P. Choi, D. Raabe, L. Hoffmann, H. Jönen, U. Rossow, A. Hangleiter, and A. Rosenauer. Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. Applied Physics Letters, 102(13):132112, 2013. [WWW] [doi:10.1063/1.4799382] Keyword(s): gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, quantum well lasers, scanning-transmission electron microscopy, semiconductor quantum wells, wide band gap semiconductors.



27. T Mehrtens, M Schowalter, D Tytko, P Choi, D Raabe, L Hoffmann, H Jönen, U Rossow, A Hangleiter, and A Rosenauer. Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-contrast. Journal of Physics: Conference Series, 471(1):012009, 2013. [WWW] [doi:10.1088/1742-6596/471/1/012009]



28. V.C. Srivastava, K.B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, J. Eckert, A. Rosenauer, and H.-W. Zoch. Microstructural characteristics of spray formed and heat treated Al-(Y, La)-Ni-Co system. Journal of Alloys and Compounds, 578:471-480, 2013. ISSN: 0925-8388. [WWW] [doi:10.1016/j.jallcom.2013.06.159] Keyword(s): Spray forming.



29. M Tewes, F F Krause, K Müller, P Potapov, M Schowalter, T Mehrtens, and A Rosenauer. Quantitative Composition Evaluation from HAADF-STEM in GeSi/Si Heterostructures. Journal of Physics: Conference Series, 471(1):012011, 2013. [WWW]



30. Timo Daberkow, Fabian Meder, Laura Treccani, Marco Schowalter, Andreas Rosenauer, and Kurosch Rezwan. Fluorescence labeling of colloidal core-shell particles with defined isoelectric points for in vitro studies. Acta Biomaterialia, 8(2):720-727, 2012. ISSN: 1742-7061. [WWW] [doi:10.1016/j.actbio.2011.11.007] Keyword(s): Fluorescence labeling.



31. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging and improved STEM-HAADF strain state analysis. Ultramicroscopy, 117:15-23, 2012. [WWW] [doi:10.1016/j.ultramic.2012.03.014]



32. Thorsten Mehrtens, Stephanie Bley, Parlapalli Venkata Satyam, and Andreas Rosenauer. Optimization of the preparation of GaN-based specimens with low-energy ion milling for (S)TEM. Micron, 43(8):902-909, 2012. [WWW] Keyword(s): Scanning transmission electron microscopy, Focused ion beam, Argon ion milling, Low-energy ion milling, Stopping and range of ions in matter.



33. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy. Microscopy and Microanalysis, 18(05):995-1009, 2012. [doi:10.1017/S1431927612001274]



34. Knut Müller, Henning Ryll, Ivan Ordavo, Sebastian Ihle, Lothar Strüder, Kerstin Volz, Josef Zweck, Heike Soltau, and Andreas Rosenauer. Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device. Applied Physics Letters, 101(21):212110, 2012. [WWW] [doi:10.1063/1.4767655] Keyword(s): CCD image sensors, electron detection, electron probes, nanostructured materials, scanning-transmission electron microscopy, semiconductor materials, strain measurement.



35. A. Rath, J. K. Dash, R. R. Juluri, A. Rosenauer, Marcos Schoewalter, and P. V. Satyam. Growth of oriented Au nanostructures: Role of oxide at the interface. Journal of Applied Physics, 111(6):064322, 2012. [WWW] [doi:10.1063/1.3698505] Keyword(s): annealing, electron energy loss spectra, elemental semiconductors, field emission electron microscopy, gold, metallic thin films, molecular beam epitaxial growth, nanofabrication, nanoparticles, scanning electron microscopy, silicon, silicon compounds, transmission electron microscopy, vacuum deposition.



36. A. Rath, J. K. Dash, R. R. Juluri, M. Schowalter, K. Müller, A. Rosenauer, and P. V. Satyam. Nano scale phase separation in Au-Ge system on ultra clean Si (100) surfaces. Journal of Applied Physics, 111:104319, 2012. [WWW] [doi:10.1063/1.4721666]



37. K. Sebald, M. Seyfried, S. Klembt, S. Bley, A. Rosenauer, D. Hommel, and C. Kruse. Strong coupling in monolithic microcavities with ZnSe quantum wells. Applied Physics Letters, 100(16):161104-161104-4, 2012. ISSN: 0003-6951. [doi:10.1063/1.4704188] Keyword(s): microcavity lasers, quantum well lasers, scanning electron microscopy, transmission electron microscopy, zinc compounds, 4255Px, 4255Sa.



38. Huanjun Zhang, Amir R. Gheisi, Andreas Sternig, Knut Müller, Marco Schowalter, Andreas Rosenauer, Oliver Diwald, and Lutz Mädler. Bulk and Surface Excitons in Alloyed and Phase-Separated ZnO-MgO Particulate Systems. ACS Applied Materials & Interfaces, 4(5):2490-2497, 2012. [doi:10.1021/am300184b]



39. W. Van den Broek, A. Rosenauer, B. Goris, G.T. Martinez, S. Bals, S. Van Aert, and D. Van Dyck. Correction of non-linear thickness effects in HAADF STEM electron tomography. Ultramicroscopy, 116(0):8-12, 2012. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2012.03.005] Keyword(s): HAADF STEM tomography.



40. T. Aschenbrenner, G. Kunert, W. Freund, C. Kruse, S. Figge, M. Schowalter, C. Vogt, J. Kalden, K. Sebald, A. Rosenauer, J. Gutowski, and D. Hommel. Catalyst free self-organized grown high-quality GaN nanorods. physica status solidi (b), 248(8):1787-1799, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147148] Keyword(s): MBE, MOVPE, nanorods, nitrides, TEM, III-V semiconductors.



41. Heiko Dartsch, Christian Tessarek, Timo Aschenbrenner, Stephan Figge, Carsten Kruse, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity. Journal of Crystal Growth, 320(1):28-31, 2011. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2010.12.008] Keyword(s): A1. Electroluminescence.



42. J. K. Dash, A. Rath, R. R. Juluri, P. Santhana Raman, K. Müller, A. Rosenauer, and P. V. Satyam. DC heating induced shape transformation of Ge structures on ultra clean Si (5 5 12) surfaces. Journal of Physics: Condensed matter, 23:135002, 2011.



43. J. K. Dash, A. Rath, R. R. Juluri, P. Santhana Raman, K. Müller, M. Schowalter, R. Imlau, A. Rosenauer, and P. V. Satyam. Shape transformation of SiGe structures on ultra clean Si(5 5 7) and Si(5 5 12) surfaces. Journal of Physics: Conference Series, 326(1):012021, 2011. [WWW]



44. J. Falta, Th. Schmidt, S. Gangopadhyay, Chr. Schulz, S. Kuhr, N. Berner, J. I. Flege, A. Pretorius, A. Rosenauer, K. Sebald, H. Lohmeyer, J. Gutowski, S. Figge, T. Yamaguchi, and D. Hommel. Cleaning and growth morphology of GaN and InGaN surfaces. physica status solidi (b), 248(8):1800-1809, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201046574] Keyword(s): chemical analysis, scanning tunneling microscopy, quantum dots, X-ray photoemission spectroscopy.



45. M. Florian, F. Jahnke, A. Pretorius, A. Rosenauer, H. Dartsch, C. Kruse, and D. Hommel. Influence of growth imperfections on optical properties of nitride pillar VCSEL microcavities. physica status solidi (b), 248(8):1867-1870, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147159] Keyword(s): lasers, laser diodes, microcavities, optical properties, III-V semiconductors.



46. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging. Journal of Physics: Conference Series, 326(1):012033, 2011. [WWW]



47. Carsten Kruse, Wojciech Pacuski, Tomasz Jakubczyk, Jakub Kobak, Jan A Gaj, Kristian Frank, Marco Schowalter, Andreas Rosenauer, Matthias Florian, Frank Jahnke, and Detlef Hommel. Monolithic ZnTe-based pillar microcavities containing CdTe quantum dots. Nanotechnology, 22(28):285204, 2011. [WWW]



48. G Kunert, W Freund, T Aschenbrenner, C Kruse, S Figge, M Schowalter, A Rosenauer, J Kalden, K Sebald, J Gutowski, M Feneberg, I Tischer, K Fujan, K Thonke, and D Hommel. Light-emitting diode based on mask-Â and catalyst-free grown N-polar GaN nanorods. Nanotechnology, 22(26):265202, 2011. [WWW]



49. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S A Gerstl, Pyuck-Pa Choi, Dierk Raabe, and Andreas Rosenauer. A (S)TEM and atom probe tomography study of InGaN. Journal of Physics: Conference Series, 326(1):012029, 2011. ISSN: 1742-6596. [WWW]



50. Knut Müller, Marco Schowalter, Andreas Rosenauer, Dongzhi Hu, Daniel M. Schaadt, Michael Hetterich, Philippe Gilet, Oleg Rubel, Rafael Fritz, and Kerstin Volz. Atomic scale annealing effects on InGaNAs studied by TEM three-beam imaging. Physical Review B, 84(4):045316, July 2011. [doi:10.1103/PhysRevB.84.045316]



51. K. Müller, M. Schowalter, O. Rubel, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, R. Fritz, K. Volz, and A. Rosenauer. TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells. Journal of Physics: Conference Series, 326(1):012026, 2011. [WWW]



52. Angelika Pretorius, Thomas Schmidt, Timo Aschenbrenner, Tomohiro Yamaguchi, Christian Kübel, Knut Müller, Heiko Dartsch, Detlef Hommel, Jens Falta, and Andreas Rosenauer. Microstructural and compositional analyses of GaN based nanostructures. Physica Status Solidi, 248:1822-1836, 2011. [doi:10.1002/pssb.201147175]



53. A Rath, J K Dash, R R Juluri, A Rosenauer, and P V Satyam. Temperature-dependent electron microscopy study of Au thin films on Si (1 0 0) with and without a native oxide layer as barrier at the interface. Journal of Physics D: Applied Physics, 44(11):115301, 2011. [WWW]



54. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Parlapalli Venkata Satyam, Stephanie Bley, Christian Tessarek, Detlef Hommel, Katrin Sebald, Moritz Seyfried, Jürgen Gutowski, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Composition mapping in InGaN by scanning transmission electron microscopy. Ultramicroscopy, 111:1316-1327, 2011. ISSN: 0304-3991. [WWW] Keyword(s): Quantitative STEM, Composition determination, Multislice simulation, Frozen lattice simulation.



55. C. Tessarek, S. Figge, T. Aschenbrenner, S. Bley, A. Rosenauer, M. Seyfried, J. Kalden, K. Sebald, J. Gutowski, and D. Hommel. Strong phase separation of strained InGaN layers due to spinodal and binodal decomposition: Formation of stable quantum dots. Phys. Rev. B, 83:115316, March 2011. [doi:10.1103/PhysRevB.83.115316]



56. T. Aschenbrenner, H. Dartsch, C. Kruse, M. Anastasescu, M. Stoica, M. Gartner, A. Pretorius, A. Rosenauer, Thomas Wagner, and D. Hommel. Optical and structural characterization of AlInN layers for optoelectronic applications. J. Appl. Phys., 108(6):063533, 2010. [WWW] [doi:10.1063/1.3467964] Keyword(s): aluminium compounds, annealing, distributed Bragg reflectors, extinction coefficients, III-V semiconductors, indium compounds, MOCVD coatings, refractive index, semiconductor epitaxial layers, surface morphology, surface roughness, transmission electron microscopy, vapour phase epitaxial growth, wide band gap semiconductors, X-ray diffraction.



57. M Dries, B Gamm, K Schultheiss, A Rosenauer, R Schröder, and D Gerthsen. Object-wave Reconstruction by Carbon-Film-Based Zernike- and Hilbert-Phase Plate Microscopy: A Theoretical Study Not Restricted to Weak Phase Objects. Microscopy and Microanalysis, 16(Supplement S2):552-553, 2010. [doi:10.1017/S1431927610055121]



58. B. Gamm, M. Dries, K. Schultheiss, H. Blank, A. Rosenauer, R.R. Schr�er, and D. Gerthsen. Object wave reconstruction by phase-plate transmission electron microscopy. Ultramicroscopy, 110(7):807-814, 2010. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2010.02.006] Keyword(s): Phase plate.



59. Suman Pokhrel, Johannes Birkenstock, Marco Schowalter, Andreas Rosenauer, and Lutz Mädler. Growth of Ultrafine Single Crystalline WO3 Nanoparticles Using Flame Spray Pyrolysis. Crystal Growth & Design, 10(2):632-639, 2010. [doi:10.1021/cg9010423]



60. Andreas Rosenauer, Katharina Gries, Knut Müller, Marco Schowalter, Angelika Pretorius, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Measurement of composition profiles in III-nitrides by quantitative scanning transmission electron microscopy. Journal of Physics: Conference Series, 209(1):012009, 2010. [WWW] [doi:10.1088/1742-6596/209/1/012009]



61. A. Schaefer, A. Sandell, L.E. Walle, V. Zielasek, M. Schowalter, A. Rosenauer, and M. Bäumer. Chemistry of thin film formation and stability during praseodymium oxide deposition on Si(111) under oxygen-deficient conditions. Surface Science, 604(15–16):1287-1293, 2010. ISSN: 0039-6028. [WWW] [doi:10.1016/j.susc.2010.04.016] Keyword(s): Praseodymium oxide.



62. Katharina Gries, Roland Kröger, Christian Kübel, Monika Fritz, and Andreas Rosenauer. Investigations of voids in the aragonite platelets of nacre. Acta Biomaterialia, 5(8):3038-3044, 2009. ISSN: 1742-7061. [WWW] [doi:10.1016/j.actbio.2009.04.017] Keyword(s): Nacre.



63. Katharina Gries, Roland Kröger, Christian Kübel, Marco Schowalter, Monika Fritz, and Andreas Rosenauer. Correlation of the orientation of stacked aragonite platelets in nacre and their connection via mineral bridges. Ultramicroscopy, 109(3):230-236, 2009. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2008.10.023] Keyword(s): Nacre.



64. Andreas Rosenauer, Katharina Gries, Knut Müller, Angelika Pretorius, Marco Schowalter, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Measurement of specimen thickness and composition in AlGaN/GaN using high-angle annular dark field images. Ultramicroscopy, 109(9):1171-1182, 2009. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2009.05.003] Keyword(s): Quantitative STEM Z-contrast imaging.



65. Jo Verbeeck, Peter Schattschneider, and Andreas Rosenauer. Image simulation of high resolution energy filtered TEM images. Ultramicroscopy, 109(4):350-360, 2009. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2009.01.003] Keyword(s): Image simulation.



66. Abdul Kadir, M.R. Gokhale, Arnab Bhattacharya, Angelika Pretorius, and Andreas Rosenauer. {MOVPE} growth and characterization of InN/GaN single and multi-quantum well structures. Journal of Crystal Growth, 311(1):95-98, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2008.10.056] Keyword(s): A1. Transmission electron microscopy.



67. D. Litvinov, M. Schowalter, A. Rosenauer, B. Daniel, J. Fallert, W. Löffler, H. Kalt, and M. Hetterich. Determination of critical thickness for defect formation of CdSe/ZnSe heterostructures by transmission electron microscopy and photoluminescence spectroscopy. physica status solidi (a), 205(12):2892-2897, 2008. ISSN: 1862-6319. [doi:10.1002/pssa.200824151] Keyword(s): 68.37.Lp, 68.37.Og, 68.55.ag, 68.65.Fg, 78.55.Et.



68. J. Pizarro, P.L. Galindo, E. Guerrero, A. Yanez, M. P. Guerrero, A. Rosenauer, D. L. Sales, and S.I. Molina. Simulation of high angle annular dark field scanning transmission electron microscopy images of large nanostructures. Applied Physics Letters, 93(15):153107-153107-3, 2008. ISSN: 0003-6951. [doi:10.1063/1.2998656] Keyword(s): indium compounds, nanowires, scanning electron microscopy, semiconductor quantum wires, 6146Km, 6837Hk, 6865La.



69. A. Pretorius, T. Yamaguchi, C. Kübel, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigation of growth and dissolution of nano-islands grown by molecular beam epitaxy. Journal of Crystal Growth, 310(4):748-756, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2007.11.203] Keyword(s): A1. High resolution transmission electron microscopy.



70. Andreas Rosenauer, Marco Schowalter, John T. Titantah, and Dirk Lamoen. An emission-potential multislice approximation to simulate thermal diffuse scattering in high-resolution transmission electron microscopy. Ultramicroscopy, 108(12):1504-1513, 2008. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2008.04.002] Keyword(s): Thermal diffuse scattering.



71. A. Pretorius, K. Müller, T. Yamaguchi, R. Kröger, D. Hommel, and A. Rosenauer. Concentration Evaluation in Nanometre-Sized InGaN Islands Using Transmission Electron Microscopy, pages 17-20. Springer Netherlands, 2008. ISBN: 978-1-4020-8615-1. [doi:10.1007/978-1-4020-8615-1_3]



72. Angelika Pretorius, Knut Müller, Roland Kröger, Detlef Hommel, Andreas Rosenauer, and Tomohiro Yamaguchi. Concentration measurement in free-standing InGaN nano-islands with transmission electron microscopy. Microscopy and Microanalysis, 13 (Suppl. 03):312-313, 2007.



73. K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells. J. Appl. Phys., 102(8):083504, 2007. [WWW] [doi:10.1063/1.2794739] Keyword(s): annealing, gallium arsenide, gallium compounds, III-V semiconductors, impurity distribution, indium compounds, photoluminescence, Rutherford backscattering, semiconductor epitaxial layers, semiconductor heterojunctions, semiconductor quantum wells, transmission electron microscopy.



74. R. Kröger, C. Kruse, C. Roder, D. Hommel, and A. Rosenauer. Relaxation in crack-free AlN/GaN superlattices. physica status solidi (b), 243(7):1533-1536, 2006. ISSN: 1521-3951. [doi:10.1002/pssb.200565470] Keyword(s): 42.79.Fm, 68.37.Lp, 68.55.Ln, 68.65.Cd, 71.72.Ff, 83.85.St.



75. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in $In_{x}Ga_{1-{}x}As$. Phys. Rev. B, 74(16):165306, October 2006. [doi:10.1103/PhysRevB.74.165306]



76. A. Rosenauer, D. Gerthsen, and V. Potin. Strain state analysis of InGaN/GaN - sources of error and optimized imaging conditions. Phys. Status Solidi A, 203(1):176-184, January 2006. [doi:10.1002] Keyword(s): InGaN/GaN, In, Ga, N, optimised imaging conditions, optimized imaging conditions, aberrations, strain, strain state.



77. T. Li, E. Hahn, D. Gerthsen, A. Rosenauer, A. Strittmatter, L. Reissmann, and D. Bimberg. Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope. Applied Physics Letters, 86(24):241911, 2005. [WWW] [doi:10.1063/1.1948517] Keyword(s): indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, electron beam effects, transmission electron microscopy, internal stresses.



78. E. Müller, P. Kruse, D. Gerthsen, M. Schowalter, A. Rosenauer, D. Lamoen, R. Kling, and A. Waag. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography. Applied Physics Letters, 86(15):154108-154108-3, 2005. ISSN: 0003-6951. [doi:10.1063/1.1901820] Keyword(s): II-VI semiconductors, electron holography, nanoparticles, transmission electron microscopy, wide band gap semiconductors, zinc compounds, 4240Lx, 6146+w, 6837Lp.



79. E. Piscopiello, A. Rosenauer, A. Passaseo, E. H. Montoya Rossi, and G. Van Tendeloo. Segregation in In(x)Ga(1-x)As/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition. Philosophical Magazine, 85(32):3857-3870, 2005. [doi:10.1080/147830500269402]



80. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron scattering in strained In(x)Ga(1-x)As. Phys. Rev. B, 72:085326, August 2005. [doi:10.1103/PhysRevB.72.085326] Keyword(s): structure factor, strain, InGaAs, In, Ga, As, first-principles calculation, electron scattering.



81. E. Roventa, G. Alexe, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigations of spatial correlation of CdSe/ZnSe quantum dot stacks grown by molecular beam epitaxy. Journal of Crystal Growth, 278(1-4):316-319, 2005. Note: 13th International Conference on Molecular Beam Epitaxy. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2005.01.017] Keyword(s): A3. Migration enhanced epitaxy.



82. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Hetterich, A. Grau, Ph. Gilet, and L. Grenouillet. Determination of the nitrogen distribution in InGaNAs/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 85:3743-3745, 2004.



83. D. Litvinov, M. Schowalter, A. Rosenauer, D. Gerthsen, T. Passow, H. Heinke, and D. Hommel. Influence of the cap layer growth temperature on the Cd distribution in CdSe/ZnSe heterostructures. Journal of Crystal Growth, 263(1-4):348-352, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.11.073] Keyword(s): A1. Desorption.



84. R. Otto, H. Kirmse, I. Häusler, W. Neumann, A. Rosenauer, D. Bimberg, and L. Muller-Kirsch. Determination of composition and strain field of a III/V quaternary quantum dot system. Applied Physics Letters, 85(21):4908-4910, 2004. ISSN: 0003-6951. [doi:10.1063/1.1823602] Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, internal stresses, nucleation, semiconductor quantum dots, transmission electron microscopy, 6835Gy, 6837Lp, 6865Hb.



85. V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano, and N. Grandjean. Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy. Journal of Crystal Growth, 262(1-4):145-150, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.10.082] Keyword(s): A1. Metalorganic vapor phase epitaxy.



86. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668-1683, 2003. ISSN: 1610-1642. [doi:10.1002/pssc.200303129] Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.



87. D. Litvinov, A. Rosenauer, and D. Gerthsen. Transformation of Shockley into Frank stacking faults in a ZnS 0.04 Se 0.96 /GaAs (001) heterostructure. Philosophical Magazine Letters, 83(9):575-581, 2003. [doi:10.1080/09500830310001594282]



88. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 83(15):3123-3125, October 2003. Keyword(s): growth, GaSb, Ga, Sb, GaAs, Ga, As, quantum wells, quantum well,.



89. E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, V. Perez-Solorzano, M. Jetter, and F. Scholz. In-Redistribution in a GaInN Quantum Well upon Thermal Annealing. physica status solidi (b), 234(3):738-741, 2002. ISSN: 1521-3951. [doi:10.1002/1521-3951(200212)234:3<738::AID-PSSB738>3.0.CO;2-X] Keyword(s): 64.75.+g, 66.30.Xj, 68.37.Lp, 78.55.Cr, 81.05.Ea.



90. D. Litvinov, A. Rosenauer, D. Gerthsen, P. Kratzert, M. Rabe, and F. Henneberger. Influence of the growth procedure on the Cd distribution in CdSe/ZnSe heterostructures: Stranski--Krastanov versus two-dimensional islands. Applied Physics Letters, 81(4):640-642, 2002. [WWW] [doi:10.1063/1.1496133] Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor heterojunctions, molecular beam epitaxial growth, semiconductor growth, island structure, interface structure, atomic force microscopy, transmission electron microscopy, chemical interdiffusion.



91. D. Litvinov, A. Rosenauer, D. Gerthsen, N. N. Ledentsov, D. Bimberg, G. A. Ljubas, V. V. Bolotov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, and I. P. Soshnikov. Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface. Applied Physics Letters, 81(6):1080-1082, 2002. [WWW] [doi:10.1063/1.1497994] Keyword(s): gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor quantum wires, semiconductor epitaxial layers, semiconductor superlattices, transmission electron microscopy, self-assembly, photoluminescence.



92. D. Litvinov, A. Rosenauer, D. Gerthsen, and H. Preis. Electron microscopy investigation of the defect configuration in CdSe/ZnSe quantum dot structures. Philosophical Magazine A, 82(7):1361-1380, 2002. [doi:10.1080/01418610208235677]



93. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546-6552, 2002. ISSN: 0021-8979. [doi:10.1063/1.1516248] Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.



94. V. Potin, A. Rosenauer, D. Gerthsen, B. Kuhn, and F. Scholz. Comparison of the Morphology and In Distribution of Capped and Uncapped InGaN Layers by Transmission Electron Microscopy. physica status solidi (b), 234(3):947-951, 2002. ISSN: 1521-3951. [doi:10.1002/1521-3951(200212)234:3<947::AID-PSSB947>3.0.CO;2-P] Keyword(s): 68.37.Lp, 68.55.Nq, 68.65.Fg, 81.05.Ea.



95. D. Gerthsen, B. Neubauer, A. Rosenauer, T. Stephan, H. Kalt, O. Schon, and M. Heuken. InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition. Applied Physics Letters, 79(16):2552-2554, 2001. ISSN: 0003-6951. [doi:10.1063/1.1409949] Keyword(s): III-V semiconductors, MOCVD, gallium compounds, indium compounds, lattice constants, photoluminescence, red shift, semiconductor growth, semiconductor quantum wells, spectral line intensity, transmission electron microscopy, wide band gap semiconductors, 6865Fg, 7855Cr, 7867De, 8107St, 8115Gh.



96. S. Kret, P. Ruterana, A. Rosenauer, and D. Gerthsen. Extracting Quantitative Information from High Resolution Electron Microscopy. physica status solidi (b), 227(1):247-295, 2001. ISSN: 1521-3951. [doi:10.1002/1521-3951(200109)227:1<247::AID-PSSB247>3.0.CO;2-F] Keyword(s): 68.35.Dv, 68.37.Lp, 68.55.Nq, 68.65.-k, S7.12, S7.14, S8.13.



97. N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Soshnikov, V. Shchukin, V. Ustinov, A. Egorov, A. Zukov, V. Volodin, M. Efremov, V. Preobrazhenskii, B. Semyagin, D. Bimberg, and Zh. Alferov. Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces. Journal of Electronic Materials, 30:463-470, 2001. ISSN: 0361-5235. [doi:10.1007/s11664-001-0084-1] Keyword(s): Chemie und Materialwissenschaften.



98. D. Litvinov, A. Rosenauer, D. Gerthsen, H. Preis, K. Fuchs, and S. Bauer. Growth and vertical correlation of CdSe/ZnSe quantum dots. Journal of Applied Physics, 89(7):3695-3699, 2001. ISSN: 0021-8979. [doi:10.1063/1.1352676] Keyword(s): II-VI semiconductors, cadmium compounds, island structure, molecular beam epitaxial growth, reflection high energy electron diffraction, semiconductor epitaxial layers, semiconductor growth, semiconductor quantum dots, transmission electron microscopy, zinc compounds, 6865Hb, 8105Dz, 8107Ta, 8115Hi.



99. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in In(x)Ga(1-x)As/GaAs$ Stranski-Krastanow layers}. Phys. Rev. B, 64(24):245334, December 2001. [doi:10.1103/PhysRevB.64.245334]



100. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Investigation of In segregation in InAs/AlAs quantum-well structures. Appl. Phys. Lett., 79(26):4426-4428, December 2001. Keyword(s): segregation, InAs, In, As, InAs/AlAs, AlAs, Al, As, quantum-well.



101. N. Peranio, A. Rosenauer, D. Gerthsen, S. V. Sorokin, I. V. Sedova, and S. V. Ivanov. Structural and chemical analysis of CdSe/ZnSe nanostructures by transmission electron microscopy. Phys. Rev. B, 61:16015-16024, June 2000. [doi:10.1103/PhysRevB.61.16015]



102. A. Rosenauer, W. Oberst, D. Litvinov, D. Gerthsen, A. Förster, and R. Schmidt. Structural and chemical investigation of $In_{0.6}Ga_{0.4}As$ Stranski-Krastanow layers buried in GaAs by transmission electron microscopy. Phys. Rev. B, 61(12):8276-8288, March 2000. [doi:10.1103/PhysRevB.61.8276]



103. M. Strassburg, Th. Deniozou, A. Hoffmann, R. Heitz, U. W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, K. Lischka, and D. Schikora. Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structures. Applied Physics Letters, 76(6):685-687, 2000. [WWW] [doi:10.1063/1.125861] Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor quantum dots, semiconductor heterojunctions, island structure, transmission electron microscopy, monolayers, photoluminescence.



104. K.G. Chinyama, K.P. O'Donnell, A. Rosenauer, and D. Gerthsen. Morphology of ultrathin CdSe quantum confinement layers in ZnSe matrices. Journal of Crystal Growth, 203(3):362-370, 1999. ISSN: 0022-0248. [WWW] [doi:10.1016/S0022-0248(99)00099-8] Keyword(s): Morphology.



105. D. Luerssen, R. Bleher, H. Richter, Th. Schimmel, H. Kalt, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, K. Ohkawa, B. Jobst, and D. Hommel. Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures. Applied Physics Letters, 75(25):3944-3946, 1999. [WWW] [doi:10.1063/1.125502] Keyword(s): zinc compounds, magnesium compounds, II-VI semiconductors, wide band gap semiconductors, semiconductor quantum wells, stacking faults, defect states, interface states, interface structure, photoluminescence, atomic force microscopy, transmission electron microscopy, excitons.



106. A. Rosenauer and D. Gerthsen. Composition evaluation by the lattice fringe analysis method using defocus series. Ultramicroscopy, 76(1):49-60, 1999.



107. E Schomburg, S Brandl, K.F Renk, N.N Ledentsov, V.M Ustinov, A.E Zhukov, A.R Kovsh, A.Yu Egorov, R.N Kyutt, B.V Volovik, P.S Kop'ev, Zh.I Alferov, A Rosenauer, D Litvinov, D Gerthsen, D.G Pavel'ev, and Y.I Koschurinov. Miniband transport in a semiconductor superlattice with submonolayer barriers. Physics Letters A, 262(4-5):396-401, 1999. ISSN: 0375-9601. [WWW] [doi:10.1016/S0375-9601(99)00612-X] Keyword(s): 85.30.Vw.



108. A. Rosenauer and D. Gerthsen. Atomic Scale Strain and Composition Evaluation from High-Resolution Transmission Electron Microscopy Images. In Peter W. Hawkes, editor, , volume 107 of Advances in Imaging and Electron Physics, pages 121-230. Elsevier, 1999. ISSN: 1076-5670. [WWW] [doi:10.1016/S1076-5670(08)70187-3]



109. Stephan Kaiser, Herbert Preis, Wolfgang Gebhardt, Oliver Ambacher, Helmut Angerer, Martin Stutzmann, Andreas Rosenauer, and Dagmar Gerthsen. Quantitative Transmission Electron Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al$_{ extbf{2}}$O$_{ extbf{3}}$(0001). Japanese Journal of Applied Physics, 37(Part 1, No. 1):84-89, 1998. [WWW] [doi:10.1143/JJAP.37.84]



110. B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, and M. Stutzmann. Analysis of composition fluctuations on an atomic scale in Al(0.25)Ga(0.75)N by high-resolution transmission electron microscopy. Applied Physics Letters, 73(7):930-932, 1998. [WWW] [doi:10.1063/1.122041] Keyword(s): aluminium compounds, gallium compounds, wide band gap semiconductors, III-V semiconductors, stoichiometry, fluctuations, transmission electron microscopy, lattice constants, semiconductor heterojunctions, interface structure, semiconductor epitaxial layers.



111. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Förster. Composition evaluation by lattice fringe analysis. Ultramicroscopy, 72:121-133, 1998. [doi:10.1016/S0304-3991(98)00002-3]



112. M. Strassburg, V. Kutzer, U. W. Pohl, A. Hoffmann, I. Broser, N. N. Ledentsov, D. Bimberg, A. Rosenauer, U. Fischer, D. Gerthsen, I. L. Krestnikov, M. V. Maximov, P. S. Kop'ev, and Zh.I. Alferov. Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix. Applied Physics Letters, 72(8):942-944, 1998. [WWW] [doi:10.1063/1.120880] Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor quantum dots, island structure, monolayers, refractive index, transmission electron microscopy, biexcitons, excitons, phonon spectra, quantum well lasers, stimulated emission.



113. Marcus J. Kastner, Gabriella Leo, Doris Brunhuber, Andreas Rosenauer, Herbert Preis, Berthold Hahn, Markus Deufel, and Wolfgang Gebhardt. Investigations on strain relaxation of ZnS(x)Se(1−x) layers grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 172(1-2):64-74, 1997. ISSN: 0022-0248. [WWW] [doi:10.1016/S0022-0248(96)00722-1]



114. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Forster. Composition evaluation of In(x)Ga(1-x)As Stranski-Krastanow-island structures by strain state analysis. Applied Physics Letters, 71(26):3868-3870, 1997. [WWW] [doi:10.1063/1.120528] Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, island structure, transmission electron microscopy, lattice constants, molecular beam epitaxial growth, semiconductor epitaxial layers, finite element analysis, segregation, semiconductor growth.



115. A. Rosenauer, T. Remmele, D. Gerthsen, K. Tillmann, and A. Förster. Atomic scale strain measurements by the digital analysis of transmission electron microscopic lattice images. Optik (Stuttgart), 105(3):99-107, 1997. Note: Eng. ISSN: 0030-4026. [WWW] Keyword(s): Experimental study, TEM, Electron microscopy, High-resolution methods, Measuring methods, Stress analysis, Layer thickness, Crystals, Semiconductor materials.



116. U. Woggon, W. Langbein, J. M. Hvam, A. Rosenauer, T. Remmele, and D. Gerthsen. Electron microscopic and optical investigations of the indium distribution in GaAs capped In(x)Ga(1-x)As islands. Applied Physics Letters, 71(3):377-379, 1997. [WWW] [doi:10.1063/1.119542] Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, buried layers, transmission electron microscopy, photoluminescence, molecular beam epitaxial growth, semiconductor growth, semiconductor epitaxial layers.



117. Marcus J. Kastner, Berthold Hahn, Claus Auchter, Markus Deufel, Andreas Rosenauer, and Wolfgang Gebhardt. Structural characterization and MOVPE growth of ZnCdSe and ZnSSe layers, quantum wells and superlattices. Journal of Crystal Growth, 159(1-4):134-137, 1996. Note: Proceedings of the seventh international conference on II-VI compouds and devices. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(95)00761-X]



118. A. Rosenauer, S. Kaiser, T. Reisinger, J. Zweck, W. Gebhardt, and D. Gerthsen. Digital analysis of high resolution transmission electron microscopy lattice images. Optik, 102:63-69, 1996.



119. A. Rosenauer, T. Reisinger, F. Franzen, G. Schutz, B. Hahn, K. Wolf, J. Zweck, and W. Gebhardt. Transmission electron microscopy and reflected high-energy electron-diffraction investigation of plastic relaxation in doped and undoped ZnSe/GaAs(001). Journal of Applied Physics, 79(8):4124-4131, 1996. [WWW] [doi:10.1063/1.361776] Keyword(s): DISLOCATIONS, DOPED MATERIALS, EPITAXIAL LAYERS, MOLECULAR BEAM EPITAXY, PLASTICITY, RHEED, STRESS RELAXATION, TEM, VPE, ZINC SELENIDES.



120. K. Tillmann, A. Thust, M. Lentzen, P. Swiatek, A. Förster, K. Urban, W. Laufs, D. Gerthsen, T. Remmele, and A. Rosenauer. Determination of segregation, elastic strain and thin-foil relaxation in In(x)Ga(1-x)As islands on GaAs(001) by high resolution transmission electron microscopy. Philosophical Magazine Letters, 74(5):309-315, 1996. [doi:10.1080/095008396180029]



121. S. Lankes, B. Hahn, C. Meier, F. Hierl, M. Kastner, A. Rosenauer, and W. Gebhardt. Photoreflectance measurements on ZnSe/ZnS0.25Se0.75SQW. physica status solidi (a), 152(1):123-131, 1995. ISSN: 1521-396X. [doi:10.1002/pssa.2211520113]



122. A. Rosenauer, T. Reisinger, E. Steinkirchner, J. Zweck, and W. Gebhardt. High resolution transmission electron microscopy determination of Cd diffusion in CdSeZnSe single quantum well structures. Journal of Crystal Growth, 152(1-2):42-50, 1995. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(95)00083-6]



123. K Wolf, S Jilka, A Rosenauer, G Schutz, H Stanzl, T Reisinger, and W Gebhardt. High-resolution X-ray diffraction investigations of epitaxially grown ZnSe/GaAs layers. Journal of Physics D: Applied Physics, 28(4A):A120, 1995. [WWW]



124. M. Grün, M. Hetterich, C. Klingshirn, A. Rosenauer, J. Zweck, and W. Gebhardt. Strain relief and growth modes in wurtzite type epitaxial layers of CdSe and CdS and in CdSe/CdS superlattices. Journal of Crystal Growth, 138(1-4):150-154, 1994. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(94)90797-8]



125. S. Bauer, A. Rosenauer, P. Link, W. Kuhn, J. Zweck, and W. Gebhardt. Misfit dislocations in epitaxial ZnTe/GaAs (001) studied by {HRTEM}. Ultramicroscopy, 51(1-4):221-227, 1993. ISSN: 0304-3991. [WWW] [doi:10.1016/0304-3991(93)90148-Q]



126. M. Grun, C. Klingshirn, A. Rosenauer, J. Zweck, and W. Gebhardt. Spatial confinement of misfit dislocations at the interface of CdSe/GaAs(111). Applied Physics Letters, 63(21):2947-2948, 1993. ISSN: 0003-6951. [doi:10.1063/1.110281] Keyword(s): 6172Ff, 6855Ln, 6865+g, BURGERS VECTOR, CADMIUM SELENIDES, ELECTRON MICROSCOPY, EPITAXIAL LAYERS, GALLIUM ARSENIDES, HETEROSTRUCTURES, INTERFACE STRUCTURE, MISFIT DISLOCATIONS.

1. Marcos Alania, Annick De Backer, Ivan Lobato, Florian F. Krause, Dirk Van Dyck, Andreas Rosenauer, and Sandra Van Aert. How precise can atoms of a nanocluster be located in 3D from a tilt series of scanning transmission electron microscopy images? (Poster). In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.



2. Knut Müller-Caspary, Florian F. Krause, Armand Béché, Martial Duchamp, Marco Schowalter, Stefan Löffler, Vadim Migunov, Florian Winkler, Martin Huth, Robert Ritz, Sebastian Ihle, Martin Simson, Henning Ryll, Heike Soltau, Lothar Strüder, Josef Zweck, Peter Schattschneider, Rafal Dunin-Borkowski, Johan Verbeeck, and Andreas Rosenauer. Measurement of Atomic Electric Fields by Scanning Transmission Electron Microscopy (STEM) Employing Ultrafast Detectors. In Microscopy and Microanalysis 2016, Columbus (OH/USA), [Invited Talk], volume 22, pages 484-485, July 24-28th 2016. Microscopy Society of America. [WWW] [doi:10.1017/S1431927616003275] Keyword(s): DPC, pnccd.



3. Knut Müller-Caspary, Andreas Oelsner, Pavel Potapov, and Thomas Schmidt. Analysis of strain and composition in GeSi/Si heterostructures by electron microscopy. In European Microscopy Congress 2016, Lyon (F), [Talk MS03-OP239], 2016. [doi:10.1002/EMC2016.0311]



4. K. Müller-Caspary, O. Oppermann, T. Grieb, A. Rosenauer, F. F. Krause, M. Schowalter, T. Mehrtens, P. Potapov, A. Beyer, and K. Volz. Angle-resolved scanning transmission electron microscopy employing an iris aperture (Poster). In Electron Microscopy and Analysis Group Annual Conference (EMAG 2016), Durham (UK), 2016.



5. Knut Müller-Caspary, Oliver Oppermann, Tim Grieb, Andreas Rosenauer, Marco Schowalter, Florian F. Krause, Thorsten Mehrtens, Pavel Potapov, Andreas Beyer, and Kerstin Volz. Angle-resolved Scanning Transmission Electron Microscopy (ARSTEM) for materials analysis. In European Microscopy Congress 2016, Lyon (F), [Poster IM06-350], 2016. [doi:10.1002/EMC2016.0259]



6. M. Schowalter, F. F. Krause, T. Grieb, K. Müller-Caspary, T. Mehrtens, and A. Rosenauer. Effects of instrument imperfections on quantitative scanning transmission electron Microscopy (Poster). In Electron Microscopy and Analysis Group Annual Conference (EMAG 2016), Durham (UK), 2016.



7. Dan Zhou, Knut Müller-Caspary, Wilfried Sigle, Florian F. Krause, Andreas Rosenauer, and Peter van Aken. Sample tilt effects on atom column position determination in ABF-STEM imaging. In Microscopy and Microanalysis Conference M&M 2016, Columbus (Ohio, USA), session A15.1, [Talk 19], July 24-28th 2016.



8. Florian Fritz Krause, Andreas Rosenauer, Knut Müller-Caspary, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. In Frontiers of Electron Microscopy in Materials Science (FEMMS) 2015, Lake Tahoe (CA/USA), [Invited Talk], September 13-18th 2015.



9. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. A quantum mechanical approach to electron picodiffraction reveals atomic electric fields. In Materials Research Society Spring Meeting 2015 (MRS 2015), San Francisco (USA) [Talk], volume Symposium ZZ, Talk 2.02, 2015.



10. Andreas Rosenauer, Florian F. Krause, Knut Müller, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. In Materials Research Society Spring Meeting 2015 (MRS 2015), San Francisco (USA) [Talk], volume Symposium ZZ, Talk 2.02, 2015.



11. Marco Schowalter, Florian F. Krause, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Effects of Instrument Imperfections on Quantitative Scanning Transmission Electron Microscopy (Poster. In Proceedings of the Microscopy Conference 2015 (MC 2015), Göttingen (D), September 6-11th 2015.



12. Manuel Dries, Simon Hettler, Björn Gamm, Erich Müller, Wilfried Send, Dagmar Gerthsen, Knut Müller, and Andreas Rosenauer. A Nanocrystalline Hilbert Phase Plate for Phase Contrast Transmission Electron Microscopy. In Microscopy and Microanalysis (M&M) 2014, Hartford (USA) [], 2014.



13. F. F. Krause, Müller K., D. Zillmann, J. Jansen, M. Schowalter, and A. Rosenauer. Comparison of intensity and absolute contrast of simulated and experimental high-resolution transmission electron microscopy images for different multislice simulation methods (Poster). In Proceedings of the 18th International Microscopy Congress (IMC), Prag (CZ), 2014.



14. Knut Müller, Henning Ryll, Ivan Ordavo, Sebastian Ihle, Martin Huth, Martin Simson, Josef Zweck, Kerstin Volz, Heike Soltau, Andreas Rosenauer, Pavel Potapov, Marco Schowalter, Lothar Strüder, Christoph Mahr, and Daniel Erben. Strain Analysis from Nano-beam Electron Diffraction Patterns Recorded on Direct Electron Charge-coupled Devices. In Microscience Microscopy Congress, MMC 2014, Manchester (UK), July, 2014 [invited talk PS3.1.4], 2014.



15. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Lars Hoffmann, Andreas Hangleiter, Pyuck-Pa Choi, and Dierk Raabe. Measurement of the indium concentration in high-indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. In SPIE Photonics West OPTO, San Francisco (USA) [Invited Talk], 2014.



16. Henning Ryll, Robert Hartmann, Martin Huth, Sebastian Ihle, Knut Müller, Andreas Rosenauer, Julia Schmidt, Martin Simson, Heike Soltau, and Lothar Strüder. New Operation Modes with the PNCCD TEM Camera for Versatile, Direct Electron Imaging in Transmission Electron Microscopy Applications. In Microscience Microscopy Congress, MMC 2014, Manchester (UK), July, 2014 [Poster 1051], 2014.



17. M Simson, R. Hartmann, M. Huth, S. Ihle, K. Müller, A. Rosenauer, H. Ryll, J. Schmidt, H. Soltau, and L. Strüder. New Operation Modes with the direct detecting pnCCD-camera in Transmission Electron Microscopy. In 18th International Microscopy Congress (IMC) [Poster IT-8-P-1696], 2014.



18. D. Zhou, W. Sigle, K. Müller, A. Rosenauer, C. Zhu, M. Kelsch, Maier J., and P. van Aken. Contrast Investigation of Annular Bright-Field Imaging in Scanning Transmission Electron Microscopy of LiFePO4. In 18th International Microscopy Congress (IMC) [Poster IT-2-P-2042], 2014.



19. Kristian Frank, Andre Wichmann, Arne Wittstock, Marcus Bäumer, Lutz Mädler, and Andreas Rosenauer. Investigation of a Nanoporous Gold / TiO2 Catalyst by Electron Microscopy and Tomography. In Symposium V - Geometry and Topology of Biomolecular and Functional Nanomaterials, volume 1504 of MRS Proceedings, 1 2013. [WWW] [doi:10.1557/opl.2013.245]



20. Tim Grieb, Knut Müller, Emanuel Cadel, Rafael Fritz, Nils Neugebohrn, Etienne Talbot, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Chemical composition analysis of dilute GaNAs and InGaNAs by high-angle annular dark field STEM. In International Conference on Electron Microscopy and XXIV Annual Meeting of the Electron Microscope Society of India (EMSI) 2013, Kolkata (India) [Talk], 2013.



21. Florian F. Krause, Knut Müller, Dennis Zillmann, Jacob Jansen, Marco Schowalter, and Andreas Rosenauer. Comparison of intensity and absolute contrast of simulated and experimental high-resolution transmission electron microscopy images for different multislice simulation methods (Poster). In Proceedings of the Microscopy Conference 2013 (MC 2013), Regensburg (D), volume 1: Instrumentation and Methods, pages IM.1.P022, 2013.



22. H. Ryll, K. Müller, S. Ihle, H. Soltau, I. Ordavo, A. Liebel, R. Hartmann, A. Rosenauer, and L. Strüder. A new direct electron imaging camera for transmission electron microscopy based on an ultrafast pnCCD. In Proceedings of the Microscopy Conference 2013 (MC 2013, Regensburg) Germany [poster], volume 1: Instrumentation and Methods, pages IM.1.P029, 2013.



23. H. Ryll, K. Müller, S. Ihle, H. Soltau, I. Ordavo, A. Liebel, R. Hartmann, A. Rosenauer, and L. Strüder. Results of a pnCCD Based Ultrafast Direct Single Electron Imaging Camera for Transmission Electron Microscopy. In Proceedings of the Microscopy and Microanalysis Conference 2013 (MandM 2013, Indianapolis) USA [Talk], volume A14.04: New Instrumentation at the Limits: Characteristics and Applications, 2013.



24. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A method to avoid strain field induced artifacts in 2D chemical mapping of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis [Talk 595], volume 18, pages 1028-1029, 2012. [doi:10.1017/S143192761200699X]



25. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain analysis by nano-beam electron diffraction (SANBED) in semiconductor nanostructures [Invited talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, pages 36, 2012. Keyword(s): SANBED.



26. A. Rosenauer, K. Mller, T. Mehrtens, M. Schowalter, A. Würfel, T. Aschenbrenner, C. Kruse, D. Hommel, L. Hoffmann, A. Hangleiter, P.-P. Choi, and D. Raabe. Measurement of composition in InGaN nanostructures using scanning transmission electron microscopy. In International Workshop on Nitride Semiconductors 2012, Sapporo (Japan) [Invited Talk], 2012.



27. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Rafael Fritz, and Kerstin Volz. Measurement of Composition and Strain by Scanning Transmission Electron Microscopy. In Microscopy and Microanalysis, Phoenix (USA) [Invited talk], 2012.



28. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Alexander Würfel, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Lars Hoffmann, Andreas Hangleiter, S. A. Gerstl, Pyuck-Pa Choi, and Dirk Raabe. Measurement of composition and strain in InGaN quantum dots by STEM [Plenary talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, EMSI2012, Bengaluru (Indien), July 4, 2012 [invited talk], pages 25, 2012.



29. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Measurement of composition and strain by STEM. In Microscopy and Microanalysis 2012 (M&M2012), Phoenix, Arizona, July 29-August 2 [Invited talk], volume 18, pages 1804-1805, 2012. [doi:10.1017/S1431927612010872]



30. A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, P. V. Satyam, S. Bley, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, J. Gutowski, S. S. A. Gerstl, P. P. Choi, and D. Raabe. Composition mapping in InGaN with quantitative STEM Z-contrast imaging. In ICNS Glasgow 2011 [Invited talk], 2011.



31. M. Schowalter, K. Müller, and A. Rosenauer. Density Functional Theory simulations for quantitative transmission electron microscopy. In CECAM-HQ-EPFL workshop 2011, Lausanne, Switzerland [invited talk], 2011.



32. T. Volkenandt, E. Müller, T. Mehrtens, A. Rosenauer, and D. Gerthsen. Quantitative analysis of InGaN thin layers by scanning transmission electron microscopy at low electron energies. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel, Germany) [poster], volume 1: Instrumentation and Methods, pages IM2.P114, 2011.



33. A. Rosenauer, K. Gries, K. Müller, M. Schowalter, A. Pretorius, A. Avramescu, K. Engl, and S. Lütgen. Measurement of Composition Profiles in III-Nitrides by Quantitative Scanning Transmission Electron Microscopy. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012009, 2010.



34. Andreas Rosenauer, Knut Müller, Katharina Gries, Marco Schowalter, Angelika Pretorius, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Towards Quantitative Scanning Transmission Electron Microscopy: Measurement of Composition in III Nitrides. In International Conference on Advances in Electron Microscopy and Related Techniques/XXXI Annual Meeting of EMSI, Mumbai (India) [Invited talk], 2010.



35. B. Gamm, M. Dries, K. Schultheiss, H. Blank, A. Rosenauer, R.R. Schr�er, and D. Gerthsen. Object wave reconstruction by phase plate transmission electron microscopy. In MC2009 Graz (Austria), 2009.



36. Knut Müller and Katharina Gries. Advanced Methods in Transmission Electron Microscopy. In Tutorial held at the workshop of the Institute for solid state physics in Riezlern, Austria. A handout of the 30 minutes talk is available at http://www.ifp.uni-bremen.de, 2008.



37. A. Pretorius, T. Yamaguchi, K. Müller, R. Kröger, D. Hommel, and A. Rosenauer. Concentration Measurement In Free-Standing InGaN Nano-Islands With Transmission Electron Microscopy. In MC 2007, Saarbrücken, Germany, September 2-7, 2007 Microsc. Microanal. 13 (Suppl. 3), 2007, 312, 2007. [doi:10.1017/S1431927607081561]



38. Andreas Rosenauer, Marco Schowalter, Knut Müller, John Titantah, and Dirk Lamoen. Ab-inito Methods as Tools for Quantitative High-Resolution Transmission Electron Microscopy. In MRS Fall Meeting, Boston (USA) [Invited talk], 2007.



39. A. Rosenauer, M. Schowalter, K. Müller, J. Titantah, D. Lamoen, P. Kruse, and D. Gerthsen. Ab-inito Methods as Tools for Quantitative High-Resolution Transmission Electron Microscopy. In MRS Autumn Meeting 2008 Symposium C: Quantitative Electron Microscopy for Materials Science SESSION C21: HRTEM and Quantitative Comparison of Experiment and Theory II, 2007.



40. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission Electron Microscopy Study of In-Segregation and Critical Floating-Layer Content of Indium for Island Formation in InGaAs. In Proceedings of the International Microscopy Conference 16, Sapporo, Japan (2006), 2006.



41. A. Pretorius, M. Siebert, T. Schmidt, R. Kroeger, T. Yamaguchi, D. Hommel, J. Falta, and A. Rosenauer. Indium Concentration Measurements in Nano-Sized InGaN Islands Using High Resolution Transmission Electron Microscopy.. In Proceedings of the 16th International Microscopy Congress, Sapporo, Japan, 1454, 2006, 2006.



42. M. Schowalter, A. Rosenauer, D. Litvinov, and D. Gerthsen. Investigation of segregation by quantitative transmission electron microscopy. In Optica Applicata 36 (2006) 297-309, 2006.



43. A. Pretorius, T. Yamaguchi, R. Kroeger, C. Kuebel, D. Hommel, and A. Rosenauer. Investigation of In(x)Ga(1-x)N islands with electron microscopy. In Springer Proceedings in Physics 107, 17 (2005), ISBN: 3.540-31914-X, 2005.



44. D. Litvinov, D. Gerthsen, A. Rosenauer, B. Daniel, and M. Hetterich. Investigation of the growth and composition of ZnMnSe heterostructures by transmission electron microscopy Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 2, 451-452. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 2, 451-452, 2004.



45. D. Litvinov, D. Gerthsen, A. Rosenauer, P. Gilet, and L. Grenouillet. Measurement of the nigrogen-concentration profile in GaInN/GaAs heterostructures by quantitative high-resolution transmission electron microscopy Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 127-128. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 127-128, 2004.



46. M. Schowalter, M. Melzer, A. Rosenauer, D. Gerthsen, R. Krebs, J. P. Reithmaier, A. Forchel, M. Arzberger, M. Bichler, G. Abstreiter, M. Grau, M.-C. Amann, R. Sellin, and D. Bimberg. Segregation in III-V semiconductor heterostructures studied by transmission electron microscopy,. In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003), 2003.



47. D. Litvinov, A. Rosenauer, D. Gerthsen, and H. Preis. Transmission electron microscopy investigation of CdSe/ZnSe quantum dot structures. In Phys. Stat. Solidi B 229 (1), 523-527, 2002.



48. V. Potin, E. Hahn, A. Rosenauer, and D. Gerthsen. Determination of indium composition fluctuation in InGaN/GaN quantum wells by quantitative high resolution electron microscopy. In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Inst. Phys. Conf. Ser. 169, 25-28 Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.



49. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Atomic-scale composition analysis of semiconductor quantum dots by transmission electron microscopy,. In 7th International Symposium on Advanced Physical Fields „Fabrication and Characterization of Nanostructured Materialsâ€�, 12-15.11.2001 Tsukuba, 2001.



50. A. Rosenauer, D. Van Dyck, D. Gerthsen, M. Arzberger, G. Böhm, and G. Abstreiter. Structural and chemical investigation of InAs/GaAs nanostructures by transmission electron microscopy,. In International Conference on Semiconductor Quantum Dots (QD 2000). - 31 July-3 Aug. 2000 Phys. Status Solidi B 224, 213-16, 2001.



51. D. Gerthsen, E. Hahn, B. Neubauer, A. Rosenauer, O. Schön, M. Heuken, and A. Rizzi. Composition fluctuations in InGaN analized by transmission electron microscopy,. In 216. WE-Heraeus Seminar on Nitrogen in Solids and at Solid Surfaces: Present Status and Future Trends. - 30 May-2 June 1999. Status Solidi A 177, 145-55, 2000.



52. D. Gerthsen, A. Rosenauer, D. Litvinov, and N. Peranio. Structural and chemical analysis of CdSe islands in a ZnSe matrix by transmission electron microscopy. In II-VI Compounds 1999. Ninth International Conference, 1-5 Nov. 1999 J. Cryst. Growth 214-215, 707-11, 2000.



53. T.H. Walter, A. Rosenauer, D. Gerthsen, F. Fischer, R. Gall, Th. Litz, A. Waag, and G. Landwehr. Transmission electron microscopy investigations of an epitaxial beryllium-chalcogenide-based superlattice,. In Microcopy of Semiconducting Materials 1997, Oxford, UK, 7-10 April 1997, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (1997), 315-318, 1997.



54. D. Gerthsen, T. Walther, and A. Rosenauer. Quantitative High-Resolution Electron Microscopy of Semiconductor Heterostructures,. In 9. Japan-Germany Forum on Information Technology, Oita (Japan), 8.-11.11.1994, 1994.



55. S. Bauer, A. Rosenauer, J. Skorsetz, W. Kuhn, H.P. Wagner, J. Zweck, and W. Gebhardt. Investigation of Strained ZnTe Epilayers by High Resolution Electron Microscopy,. In Fifth international conference on II-VI-compounds, Tamano, Japan, 8-13 Sept 1991, J. Cryst Growth 117, 297-302, 1992.

1. Dennis Zillmann. Bestimmung der Modulationstransferfunktion einer CCD-Kamera und Kontrasttransfer in der Transmissionselektronenmikroskopie (Determination of the modulation transfer function of a CCD camera and contrast transfer in the field of transmission electron microscopy). Master's thesis, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany, October 2011.



2. Thorsten Mehrtens. Bestimmung von Segregationsprofilen in InGaAs/GaAs-Quantentrögen mittels konventioneller und Rastertransmissionselektronenmikroskopie. Master's thesis, Universität Bremen, 2009.



3. Knut Müller. Quantitative Analyse von InGaN-Inseln mittels Hochauflösungs-Transmissionselektronenmikroskopie (Quantitative analysis of InGaN-islands by high-resolution transmission electron microscopy), June 2006.

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