1. T. Aschenbrenner, H. Dartsch, C. Kruse, M. Anastasescu, M. Stoica, M. Gartner, A. Pretorius, A. Rosenauer, Thomas Wagner, and D. Hommel. Optical and structural characterization of AlInN layers for optoelectronic applications. J. Appl. Phys., 108(6):063533, 2010. [WWW] [doi:10.1063/1.3467964] Keyword(s): aluminium compounds, annealing, distributed Bragg reflectors, extinction coefficients, III-V semiconductors, indium compounds, MOCVD coatings, refractive index, semiconductor epitaxial layers, surface morphology, surface roughness, transmission electron microscopy, vapour phase epitaxial growth, wide band gap semiconductors, X-ray diffraction.



2. K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells. J. Appl. Phys., 102(8):083504, 2007. [WWW] [doi:10.1063/1.2794739] Keyword(s): annealing, gallium arsenide, gallium compounds, III-V semiconductors, impurity distribution, indium compounds, photoluminescence, Rutherford backscattering, semiconductor epitaxial layers, semiconductor heterojunctions, semiconductor quantum wells, transmission electron microscopy.



3. D. Litvinov, A. Rosenauer, D. Gerthsen, N. N. Ledentsov, D. Bimberg, G. A. Ljubas, V. V. Bolotov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, and I. P. Soshnikov. Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface. Applied Physics Letters, 81(6):1080-1082, 2002. [WWW] [doi:10.1063/1.1497994] Keyword(s): gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor quantum wires, semiconductor epitaxial layers, semiconductor superlattices, transmission electron microscopy, self-assembly, photoluminescence.



4. D. Litvinov, A. Rosenauer, D. Gerthsen, H. Preis, K. Fuchs, and S. Bauer. Growth and vertical correlation of CdSe/ZnSe quantum dots. Journal of Applied Physics, 89(7):3695-3699, 2001. ISSN: 0021-8979. [doi:10.1063/1.1352676] Keyword(s): II-VI semiconductors, cadmium compounds, island structure, molecular beam epitaxial growth, reflection high energy electron diffraction, semiconductor epitaxial layers, semiconductor growth, semiconductor quantum dots, transmission electron microscopy, zinc compounds, 6865Hb, 8105Dz, 8107Ta, 8115Hi.



5. B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, and M. Stutzmann. Analysis of composition fluctuations on an atomic scale in Al(0.25)Ga(0.75)N by high-resolution transmission electron microscopy. Applied Physics Letters, 73(7):930-932, 1998. [WWW] [doi:10.1063/1.122041] Keyword(s): aluminium compounds, gallium compounds, wide band gap semiconductors, III-V semiconductors, stoichiometry, fluctuations, transmission electron microscopy, lattice constants, semiconductor heterojunctions, interface structure, semiconductor epitaxial layers.



6. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Forster. Composition evaluation of In(x)Ga(1-x)As Stranski-Krastanow-island structures by strain state analysis. Applied Physics Letters, 71(26):3868-3870, 1997. [WWW] [doi:10.1063/1.120528] Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, island structure, transmission electron microscopy, lattice constants, molecular beam epitaxial growth, semiconductor epitaxial layers, finite element analysis, segregation, semiconductor growth.



7. U. Woggon, W. Langbein, J. M. Hvam, A. Rosenauer, T. Remmele, and D. Gerthsen. Electron microscopic and optical investigations of the indium distribution in GaAs capped In(x)Ga(1-x)As islands. Applied Physics Letters, 71(3):377-379, 1997. [WWW] [doi:10.1063/1.119542] Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, buried layers, transmission electron microscopy, photoluminescence, molecular beam epitaxial growth, semiconductor growth, semiconductor epitaxial layers.



8. A. Rosenauer, T. Reisinger, F. Franzen, G. Schutz, B. Hahn, K. Wolf, J. Zweck, and W. Gebhardt. Transmission electron microscopy and reflected high-energy electron-diffraction investigation of plastic relaxation in doped and undoped ZnSe/GaAs(001). Journal of Applied Physics, 79(8):4124-4131, 1996. [WWW] [doi:10.1063/1.361776] Keyword(s): DISLOCATIONS, DOPED MATERIALS, EPITAXIAL LAYERS, MOLECULAR BEAM EPITAXY, PLASTICITY, RHEED, STRESS RELAXATION, TEM, VPE, ZINC SELENIDES.



9. M. Grün, M. Hetterich, C. Klingshirn, A. Rosenauer, J. Zweck, and W. Gebhardt. Strain relief and growth modes in wurtzite type epitaxial layers of CdSe and CdS and in CdSe/CdS superlattices. Journal of Crystal Growth, 138(1-4):150-154, 1994. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(94)90797-8]



10. M. Grun, C. Klingshirn, A. Rosenauer, J. Zweck, and W. Gebhardt. Spatial confinement of misfit dislocations at the interface of CdSe/GaAs(111). Applied Physics Letters, 63(21):2947-2948, 1993. ISSN: 0003-6951. [doi:10.1063/1.110281] Keyword(s): 6172Ff, 6855Ln, 6865+g, BURGERS VECTOR, CADMIUM SELENIDES, ELECTRON MICROSCOPY, EPITAXIAL LAYERS, GALLIUM ARSENIDES, HETEROSTRUCTURES, INTERFACE STRUCTURE, MISFIT DISLOCATIONS.

1. M. Grün, M. Hetterich, C. Klingshirn, A Rosenauer, and W. Gebhardt. Decrease of the Phase Stability in II-VI Epitaxial Layers Due to Strain,. In II-VI Compounds and Semimagnetic Semiconductors. Third European Workshop on II-VI Compounds and Fourth International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors. Linz, Austria, 26-28 Sept 1994, Materials Science Forum Vols. 182-184, 235-238, 1995.

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