1. Florian F. Krause, Jan-Philipp Ahl, Darius Tytko, Pyuck-Pa Choi, Ricardo Egoavil, Marco Schowalter, Thorsten Mehrtens, Knut Müller-Caspary, Johan Verbeeck, Dierk Raabe, Joachim Hertkorn, Karl Engl, and Andreas Rosenauer. Homogeneity and composition of AlInGaN: A multiprobe nanostructure study. Ultramicroscopy, 156(0):29-36, 2015. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.04.012] Keyword(s): HAADF STEM.



2. M. Florian, F. Jahnke, A. Pretorius, A. Rosenauer, H. Dartsch, C. Kruse, and D. Hommel. Influence of growth imperfections on optical properties of nitride pillar VCSEL microcavities. physica status solidi (b), 248(8):1867-1870, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147159] Keyword(s): lasers, laser diodes, microcavities, optical properties, III-V semiconductors.



3. Meng-Ku Chen, Yung-Chen Cheng, Jiun-Yang Chen, Cheng-Ming Wu, C.C. Yang, Kung-Jen Ma, Jer-Ren Yang, and Andreas Rosenauer. Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells. Journal of Crystal Growth, 279(1-2):55-64, 2005. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2005.02.018] Keyword(s): A1. Segregation.



4. Yung-Chen Cheng, En-Chiang Lin, Cheng-Ming Wu, C.C. Yang, Jer-Ren Yang, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, L.C. Chen, Chang-Chi Pan, and Jen-Inn Chyi. Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions. Applied Physics Letters, 84(14):2506-2508, 2004. ISSN: 0003-6951. [doi:10.1063/1.1690872] Keyword(s): III-V semiconductors, gallium compounds, indium compounds, photoluminescence, quantum confined Stark effect, semiconductor doping, semiconductor quantum wells, silicon, wide band gap semiconductors, 6172Vv, 6865Fg, 7855Cr, 7867De.



5. V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano, and N. Grandjean. Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy. Journal of Crystal Growth, 262(1-4):145-150, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.10.082] Keyword(s): A1. Metalorganic vapor phase epitaxy.



6. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668-1683, 2003. ISSN: 1610-1642. [doi:10.1002/pssc.200303129] Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.



7. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546-6552, 2002. ISSN: 0021-8979. [doi:10.1063/1.1516248] Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.



8. V. Potin, A. Rosenauer, D. Gerthsen, B. Kuhn, and F. Scholz. Comparison of the Morphology and In Distribution of Capped and Uncapped InGaN Layers by Transmission Electron Microscopy. physica status solidi (b), 234(3):947-951, 2002. ISSN: 1521-3951. [doi:10.1002/1521-3951(200212)234:3<947::AID-PSSB947>3.0.CO;2-P] Keyword(s): 68.37.Lp, 68.55.Nq, 68.65.Fg, 81.05.Ea.



9. D. Gerthsen, B. Neubauer, A. Rosenauer, T. Stephan, H. Kalt, O. Schon, and M. Heuken. InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition. Applied Physics Letters, 79(16):2552-2554, 2001. ISSN: 0003-6951. [doi:10.1063/1.1409949] Keyword(s): III-V semiconductors, MOCVD, gallium compounds, indium compounds, lattice constants, photoluminescence, red shift, semiconductor growth, semiconductor quantum wells, spectral line intensity, transmission electron microscopy, wide band gap semiconductors, 6865Fg, 7855Cr, 7867De, 8107St, 8115Gh.



10. E. Kurtz, M. Schmidt, M. Baldauf, S. Wachter, M. Grün, H. Kalt, C. Klingshirn, D. Litvinov, A. Rosenauer, and D. Gerthsen. Suppression of lateral fluctuations in CdSe-based quantum wells. Applied Physics Letters, 79(8):1118-1120, 2001. [WWW] [doi:10.1063/1.1394172] Keyword(s): cadmium compounds, II-VI semiconductors, semiconductor quantum wells, fluctuations, photoluminescence, semiconductor growth, spectral line breadth, molecular beam epitaxial growth.



11. B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, and M. Stutzmann. Analysis of composition fluctuations on an atomic scale in Al(0.25)Ga(0.75)N by high-resolution transmission electron microscopy. Applied Physics Letters, 73(7):930-932, 1998. [WWW] [doi:10.1063/1.122041] Keyword(s): aluminium compounds, gallium compounds, wide band gap semiconductors, III-V semiconductors, stoichiometry, fluctuations, transmission electron microscopy, lattice constants, semiconductor heterojunctions, interface structure, semiconductor epitaxial layers.

1. A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, P. V. Satyam, S. Bley, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, J. Gutowski, S. S. A. Gerstl, P. P. Choi, and D. Raabe. Composition mapping in InGaN with quantitative STEM Z-contrast imaging. In ICNS Glasgow 2011 [Invited talk], 2011.



2. D. Gerthsen, E. Hahn, B. Neubauer, A. Rosenauer, O. Schön, M. Heuken, and A. Rizzi. Composition fluctuations in InGaN analized by transmission electron microscopy,. In 216. WE-Heraeus Seminar on Nitrogen in Solids and at Solid Surfaces: Present Status and Future Trends. - 30 May-2 June 1999. Status Solidi A 177, 145-55, 2000.



3. B. Neubauer, E. Hahn, A. Rosenauer, and D. Gerthsen. Investigation of Composition Fluctuations in InxGa1-xN,. In Microcopy of Semiconducting Materials 1999, Oxford, UK, 22-25 March 1999, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (1999), 1999.



4. B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, M. Stutzmann, M. Albrecht, and H.P. Strunk. Analysis of composition fluctuations in Al(x)Ga(1-x)N. In E-MRS 1998 Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials. - 16-19 June 1998 Mater. Sci. Eng. B 59, 182-5, 1999.

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