1. Knut Müller. Transmission electron microscopy of InGaNAs nanostructures using ab-initio structure factors for strain-relaxed supercells. PhD thesis, Universität Bremen, May 2011.

1. T. Aschenbrenner, M. Schowalter, T. Mehrtens, K. Müller-Caspary, M. Fikry, D. Heinz, I. Tischer, M. Madel, K. Thonke, D. Hommel, F. Scholz, and A.ahr Rosenauer. Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy. Journal of Applied Physics, 119(17), 2016. [doi:10.1063/1.4948385]



2. Daniel Carvalho, Knut Müller-Caspary, Marco Schowalter, Tim Grieb, Thorsten Mehrtens, Andreas Rosenauer, Rafael Ben, Teresa Garcìa, Andrés Redondo-Cubero, Katharina Lorenz, Bruno Daudin, and Francisco M. Morales. Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction. Scientific Reports, 6:28459, June 2016. [doi:10.1038/srep28459] Keyword(s): DPC, strain, NBD, SANBED, nano-beam electron diffraction, polarization, polarisation, piezoelectric.



3. Andrea Kirsch, M. Mangir Murshed, Marco Schowalter, Andreas Rosenauer, and Thorsten M. Gesing. Nanoparticle Precursor into Polycrystalline Bi2Fe4O9: An Evolutionary Investigation of Structural, Morphological, Optical, and Vibrational Properties. The Journal of Physical Chemistry C, 120(33):18831-18840, 2016. [doi:10.1021/acs.jpcc.6b04773]



4. Matthias Lohr, Ralph Schregle, Michael Jetter, Clemens Wächter, Knut Müller-Caspary, Thorsten Mehrtens, Andreas Rosenauer, Ines Pietzonka, Martin Strassburg, and Josef Zweck. Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures. physica status solidi (b), 253:140-144, 2016. ISSN: 1521-3951. [doi:10.1002/pssb.201552288] Keyword(s): DPC, Efficiency droop, EFTEM, electric fields, GaN, HAADF, IMFP, MQW, QCSE, quantification, STEM.



5. Knut Müller-Caspary, Florian F. Krause, Tim Grieb, Stefan Löffler, Marco Schowalter, Armand Béché, Vincent Galioit, Dennis Marquardt, Josef Zweck, Peter Schattschneider, Johan Verbeeck, and Andreas Rosenauer. Measurement of atomic electric fields and charge densities from average momentum transfers using scanning transmission electron microscopy. Ultramicroscopy, (in print), 2016. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2016.05.004] Keyword(s): TEM.



6. Junjie Shi, Christoph Mahr, M. Mangir Murshed, Volkmar Zielasek, Andreas Rosenauer, Thorsten M. Gesing, Marcus Baumer, and Arne Wittstock. A versatile sol-gel coating for mixed oxides on nanoporous gold and their application in the water gas shift reaction. Catal. Sci. Technol., 6:5311-5319, 2016. [doi:10.1039/C5CY02205C]



7. P. S. Sokolov, M. Yu. Petrov, T. Mehrtens, K. Müller-Caspary, A. Rosenauer, D. Reuter, and A. D. Wieck. Reconstruction of nuclear quadrupole interaction in (In,Ga)As/GaAs quantum dots observed by transmission electron microscopy. Phys. Rev. B, 93:045301, January 2016. [doi:10.1103/PhysRevB.93.045301]



8. Knut Müller-Caspary, Andreas Oelsner, and Pavel Potapov. Two-dimensional strain mapping in semiconductors by nano-beam electron diffracion employing a delay-line detector. Applied Physics Letters, 107:072110, 2015. [doi:10.1063/1.4927837]



9. Suman Pokhrel, Johannes Birkenstock, Arezoo Dianat, Janina Zimmermann, Marco Schowalter, Andreas Rosenauer, Lucio Colombi Ciacchi, and L. Madler. In situ high temperature X-ray diffraction, transmission electron microscopy and theoretical modeling for the formation of WO3 crystallites. CrystEngComm, 17:6985-6998, 2015. [doi:10.1039/C5CE00526D]



10. U. Rossow, L. Hoffmann, H. Bremers, E.R. Buss, F. Ketzer, T. Langer, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer. Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells. Journal of Crystal Growth, 414(0):49-55, 2015. Note: Proceedings of the Seventeenth International Conference on Metalorganic Vapor Phase Epitaxy. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2014.11.040] Keyword(s): A1. Surface processes.



11. Elias Goldmann, Matthias Paul, Florian F. Krause, Knut Müller, Jan Kettler, Thorsten Mehrtens, Andreas Rosenauer, Michael Jetter, Peter Michler, and Frank Jahnke. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 micrometers. Applied Physics Letters, 105(15):152102, 2014. [doi:10.1063/1.4898186]



12. Tim Grieb, Knut Müller, Emmanuel Cadel, Andreas Beyer, Marco Schowalter, Etienne Talbot, Kerstin Volz, and Andreas Rosenauer. Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM. Microscopy and Microanalysis, 20:1740, 9 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614013051]



13. Dominik Heinz, Mohamed Fikry, Timo Aschenbrenner, Marco Schowalter, Tobias Meisch, Manfred Madel, Florian Huber, Matthias Hocker, Manuel Frey, Ingo Tischer, Benjamin Neuschl, Thorsten Mehrtens, Knut Müller, Andreas Rosenauer, Detlef Hommel, Klaus Thonke, and Ferdinand Scholz. GaN tubes with coaxial non- and semipolar GaInN quantum wells. Phys. Status Solidi (c), 11:648-651, 2014.



14. H. Kauko, B. O. Fimland, T. Grieb, A. M. Munshi, K. Müller, A. Rosenauer, and A. T. J. van Helvoort. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires. Journal of Applied Physics, 116(14):144303, 2014. [doi:10.1063/1.4896904]



15. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Atomic electric fields revealed by a quantum mechanical approach to electron picodiffraction. Nature Communications, 5:5653:1-8, December 2014. [doi:10.1038/ncomms6653] Keyword(s): DPC, STEM, electric field.



16. Marco Schowalter, Ingo Stoffers, Florian F. Krause, Thorsten Mehrtens, Knut Müller, Malte Fandrich, Timo Aschenbrenner, Detlef Hommel, and Andreas Rosenauer. Influence of Static Atomic Displacements on Composition Quantification of AlGaN/GaN Heterostructures from HAADF-STEM Images. Microscopy and Microanalysis, 20:1463-1470, 10 2014. ISSN: 1435-8115. [doi:10.1017/S1431927614012732]



17. Duggi V. Sridhara Rao, Ramachandran Sankarasubramanian, Kuttanellore Muraleedharan, Thorsten Mehrtens, Andreas Rosenauer, and Dipankar Banerjee. Quantitative Strain and Compositional Studies of InGaAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques. Microscopy and Microanalysis, 20:1262-1270, 8 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614000762]



18. Olesea Volciuc, Vladimir Sergentu, Ion Tiginyanu, Marco Schowalter, Veaceslav Ursaki, Andreas Rosenauer, Detlef Hommel, and Jürgen Gutowski. Photonic Crystal Structures Based on GaN Ultrathin Membranes. Journal of Nanoelectronics and Optoelectronics, 9(2):271-275, 2014. [WWW] [doi:10.1166/jno.2014.1586] Keyword(s): GAN ULTRATHIN MEMBRANES, NANOSTRUCTURE FABRICATION, PHOTONIC CRYSTALS, THEORY AND DESIGN.



19. Malte Fandrich, Thorsten Mehrtens, Timo Aschenbrenner, Thorsten Klein, Martina Gebbe, Stephan Figge, Carsten Kruse, Andreas Rosenauer, and Detlef Hommel. Nitride based heterostructures with Ga- and N-polarity for sensing applications. Journal of Crystal Growth, 370(0):68-73, 2013. ISSN: 0022-0248. [WWW] Keyword(s): A1. Characterization, A3. Metalorganic vapor phase epitaxy, A3. Molecular beam epitaxy, B1. Nitrides, B3. Sensors.



20. Tim Grieb, Knut Müller, Rafael Fritz, Vincenzo Grillo, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Quantitative chemical evaluation of dilute GaNAs using ADF STEM: Avoiding surface strain induced artifacts. Ultramicroscopy, 129(0):1-9, 2013. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2013.02.006] Keyword(s): Quantitative.



21. L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, M. Schowalter, T. Mehrtens, A Rosenauer, and A. Hangleiter. Atomics scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content. Applied Physics Letters, 102:102110, 2013. [doi:10.1063/1.4795623]



22. H. Kauko, T. Grieb, R. Bjørge, M. Schowalter, A.M. Munshi, H. Weman, A. Rosenauer, and A.T.J. van Helvoort. Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM. Micron, 44(0):254-260, 2013. ISSN: 0968-4328. [WWW] [doi:10.1016/j.micron.2012.07.002] Keyword(s): HAADF-STEM.



23. Thorsten Mehrtens, Knut Müller, Marco Schowalter, Dongzhi Hu, Daniel M. Schaadt, and Andreas Rosenauer. Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images. Ultramicroscopy, 131(0):1-9, 2013. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2013.03.018] Keyword(s): HAADF-STEM.



24. T. Mehrtens, M. Schowalter, D. Tytko, P. Choi, D. Raabe, L. Hoffmann, H. Jönen, U. Rossow, A. Hangleiter, and A. Rosenauer. Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. Applied Physics Letters, 102(13):132112, 2013. [WWW] [doi:10.1063/1.4799382] Keyword(s): gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, quantum well lasers, scanning-transmission electron microscopy, semiconductor quantum wells, wide band gap semiconductors.



25. T Mehrtens, M Schowalter, D Tytko, P Choi, D Raabe, L Hoffmann, H Jönen, U Rossow, A Hangleiter, and A Rosenauer. Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-contrast. Journal of Physics: Conference Series, 471(1):012009, 2013. [WWW] [doi:10.1088/1742-6596/471/1/012009]



26. K Müller, H Ryll, I Ordavo, M Schowalter, J Zweck, H Soltau, S Ihle, L Strüder, K Volz, P Potapov, and A Rosenauer. STEM strain analysis at sub-nanometre scale using millisecond frames from a direct electron read-out CCD camera. Journal of Physics: Conference Series, 471(1):012024, 2013. [WWW]



27. U. Rossow, A. Kruse, H. Jönen, L. Hoffmann, F. Ketzer, T. Langer, R. Buss, H. Bremers, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer. Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region. Journal of Crystal Growth, 370(0):105-108, 2013. ISSN: 0022-0248. [WWW] Keyword(s): A3. Low press. metalorganic vapor phase epitaxy, A3. Quantum wells, A3. Laser epitaxy, B1. Nitrides, B2. Semiconducting III-V materials.



28. A. Schneider, K. Sebald, A. Dev, K. Frank, A. Rosenauer, and T. Voss. Towards optical hyperdoping of binary oxide semiconductors. Journal of Applied Physics, 113(14):143512, 2013. [WWW] [doi:10.1063/1.4801531] Keyword(s): antimony, high-frequency effects, high-speed optical techniques, II-VI semiconductors, nanostructured materials, semiconductor doping, surface structure, wide band gap semiconductors.



29. V.C. Srivastava, K.B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, J. Eckert, A. Rosenauer, and H.-W. Zoch. Microstructural characteristics of spray formed and heat treated Al-(Y, La)-Ni-Co system. Journal of Alloys and Compounds, 578:471-480, 2013. ISSN: 0925-8388. [WWW] [doi:10.1016/j.jallcom.2013.06.159] Keyword(s): Spray forming.



30. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging and improved STEM-HAADF strain state analysis. Ultramicroscopy, 117:15-23, 2012. [WWW] [doi:10.1016/j.ultramic.2012.03.014]



31. Dongchao Hou, Apurba Dev, Kristian Frank, Andreas Rosenauer, and Tobias Voss. Oxygen-Controlled Photoconductivity in ZnO Nanowires Functionalized with Colloidal CdSe Quantum Dots. The Journal of Physical Chemistry C, 116(36):19604-19610, 2012. [doi:10.1021/jp307235u]



32. Jens A. Kemmler, Suman Pokhrel, Johannes Birkenstock, Marco Schowalter, Andreas Rosenauer, Nicolae Bârsan, Udo Weimar, and Lutz Mädler. Quenched, nanocrystalline In4Sn3O12 high temperature phase for gas sensing applications. Sensors and Actuators B: Chemical, 161(1):740-747, 2012. ISSN: 0925-4005. [WWW] [doi:10.1016/j.snb.2011.11.026] Keyword(s): Flame spray pyrolysis.



33. Thorsten Mehrtens, Stephanie Bley, Parlapalli Venkata Satyam, and Andreas Rosenauer. Optimization of the preparation of GaN-based specimens with low-energy ion milling for (S)TEM. Micron, 43(8):902-909, 2012. [WWW] Keyword(s): Scanning transmission electron microscopy, Focused ion beam, Argon ion milling, Low-energy ion milling, Stopping and range of ions in matter.



34. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy. Microscopy and Microanalysis, 18(05):995-1009, 2012. [doi:10.1017/S1431927612001274]



35. Marco Schowalter, Andreas Rosenauer, and Kerstin Volz. Parameters for temperature dependence of mean-square displacements for B-, Bi- and Tl-containing binary III-V compounds. Acta Crystallographica Section A, 68(3):319-323, 2012. ISSN: 1600-5724. [doi:10.1107/S0108767312002681] Keyword(s): Debye-Waller factors, mean-square displacements, force constants, phonon density of states, phonon dispersion relations, density functional theory.



36. Huanjun Zhang, Amir R. Gheisi, Andreas Sternig, Knut Müller, Marco Schowalter, Andreas Rosenauer, Oliver Diwald, and Lutz Mädler. Bulk and Surface Excitons in Alloyed and Phase-Separated ZnO-MgO Particulate Systems. ACS Applied Materials & Interfaces, 4(5):2490-2497, 2012. [doi:10.1021/am300184b]



37. Balint Aradi, Peter Deak, Huynh Anh Huy, Andreas Rosenauer, and Thomas Frauenheim. Role of Symmetry in the Stability and Electronic Structure of Titanium Dioxide Nanowires. The Journal of Physical Chemistry C, 115(38):18494-18499, 2011. [doi:10.1021/jp206183x]



38. T. Aschenbrenner, G. Kunert, W. Freund, C. Kruse, S. Figge, M. Schowalter, C. Vogt, J. Kalden, K. Sebald, A. Rosenauer, J. Gutowski, and D. Hommel. Catalyst free self-organized grown high-quality GaN nanorods. physica status solidi (b), 248(8):1787-1799, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147148] Keyword(s): MBE, MOVPE, nanorods, nitrides, TEM, III-V semiconductors.



39. Heiko Dartsch, Christian Tessarek, Timo Aschenbrenner, Stephan Figge, Carsten Kruse, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity. Journal of Crystal Growth, 320(1):28-31, 2011. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2010.12.008] Keyword(s): A1. Electroluminescence.



40. J. Falta, Th. Schmidt, S. Gangopadhyay, Chr. Schulz, S. Kuhr, N. Berner, J. I. Flege, A. Pretorius, A. Rosenauer, K. Sebald, H. Lohmeyer, J. Gutowski, S. Figge, T. Yamaguchi, and D. Hommel. Cleaning and growth morphology of GaN and InGaN surfaces. physica status solidi (b), 248(8):1800-1809, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201046574] Keyword(s): chemical analysis, scanning tunneling microscopy, quantum dots, X-ray photoemission spectroscopy.



41. Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Gerd Kunert, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. A structural investigation of highly ordered catalyst- and mask-free GaN nanorods. Nanotechnology, 22(2):025603, 2011. [WWW]



42. M. Florian, F. Jahnke, A. Pretorius, A. Rosenauer, H. Dartsch, C. Kruse, and D. Hommel. Influence of growth imperfections on optical properties of nitride pillar VCSEL microcavities. physica status solidi (b), 248(8):1867-1870, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147159] Keyword(s): lasers, laser diodes, microcavities, optical properties, III-V semiconductors.



43. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging. Journal of Physics: Conference Series, 326(1):012033, 2011. [WWW]



44. V. Grillo, K. Müller, K. Volz, F. Glas, T. Grieb, and A. Rosenauer. Strain, composition and disorder in ADF imaging of semiconductors. Journal of Physics: Conference Series, 326(1):012006, 2011. [WWW]



45. Robert Imlau, Knut Müller, Oleg Rubel, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing. Journal of Physics: Conference Series, 326(1):012038, 2011. [WWW]



46. Carsten Kruse, Wojciech Pacuski, Tomasz Jakubczyk, Jakub Kobak, Jan A Gaj, Kristian Frank, Marco Schowalter, Andreas Rosenauer, Matthias Florian, Frank Jahnke, and Detlef Hommel. Monolithic ZnTe-based pillar microcavities containing CdTe quantum dots. Nanotechnology, 22(28):285204, 2011. [WWW]



47. G Kunert, W Freund, T Aschenbrenner, C Kruse, S Figge, M Schowalter, A Rosenauer, J Kalden, K Sebald, J Gutowski, M Feneberg, I Tischer, K Fujan, K Thonke, and D Hommel. Light-emitting diode based on mask-Â and catalyst-free grown N-polar GaN nanorods. Nanotechnology, 22(26):265202, 2011. [WWW]



48. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S A Gerstl, Pyuck-Pa Choi, Dierk Raabe, and Andreas Rosenauer. A (S)TEM and atom probe tomography study of InGaN. Journal of Physics: Conference Series, 326(1):012029, 2011. ISSN: 1742-6596. [WWW]



49. K. Müller, M. Schowalter, O. Rubel, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, R. Fritz, K. Volz, and A. Rosenauer. TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells. Journal of Physics: Conference Series, 326(1):012026, 2011. [WWW]



50. Angelika Pretorius, Thomas Schmidt, Timo Aschenbrenner, Tomohiro Yamaguchi, Christian Kübel, Knut Müller, Heiko Dartsch, Detlef Hommel, Jens Falta, and Andreas Rosenauer. Microstructural and compositional analyses of GaN based nanostructures. Physica Status Solidi, 248:1822-1836, 2011. [doi:10.1002/pssb.201147175]



51. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Parlapalli Venkata Satyam, Stephanie Bley, Christian Tessarek, Detlef Hommel, Katrin Sebald, Moritz Seyfried, Jürgen Gutowski, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Composition mapping in InGaN by scanning transmission electron microscopy. Ultramicroscopy, 111:1316-1327, 2011. ISSN: 0304-3991. [WWW] Keyword(s): Quantitative STEM, Composition determination, Multislice simulation, Frozen lattice simulation.



52. Th. Schmidt, M. Siebert, J. I. Flege, S. Figge, S. Gangopadhyay, A. Pretorius, T.-L. Lee, J. Zegenhagen, L. Gregoratti, A. Barinov, A. Rosenauer, D. Hommel, and J. Falta. Mg and Si dopant incorporation and segregation in GaN. physica status solidi (b), 248(8):1810-1821, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201046531] Keyword(s): defects, dopants, photoelectron microscopy, segregation, X-ray standing waves.



53. C. Tessarek, S. Figge, T. Aschenbrenner, S. Bley, A. Rosenauer, M. Seyfried, J. Kalden, K. Sebald, J. Gutowski, and D. Hommel. Strong phase separation of strained InGaN layers due to spinodal and binodal decomposition: Formation of stable quantum dots. Phys. Rev. B, 83:115316, March 2011. [doi:10.1103/PhysRevB.83.115316]



54. T. Aschenbrenner, H. Dartsch, C. Kruse, M. Anastasescu, M. Stoica, M. Gartner, A. Pretorius, A. Rosenauer, Thomas Wagner, and D. Hommel. Optical and structural characterization of AlInN layers for optoelectronic applications. J. Appl. Phys., 108(6):063533, 2010. [WWW] [doi:10.1063/1.3467964] Keyword(s): aluminium compounds, annealing, distributed Bragg reflectors, extinction coefficients, III-V semiconductors, indium compounds, MOCVD coatings, refractive index, semiconductor epitaxial layers, surface morphology, surface roughness, transmission electron microscopy, vapour phase epitaxial growth, wide band gap semiconductors, X-ray diffraction.



55. Knut Müller, Marco Schowalter, Andreas Rosenauer, Jacob Jansen, Kenji Tsuda, John Titantah, and Dirk Lamoen. Refinement of chemically sensitive structure factors using parallel and convergent beam electron nanodiffraction. Journal of Physics: Conference Series, 209(1):012025, 2010. [WWW] [doi:10.1088/1742-6596/209/1/012025]



56. Andreas Rosenauer, Katharina Gries, Knut Müller, Marco Schowalter, Angelika Pretorius, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Measurement of composition profiles in III-nitrides by quantitative scanning transmission electron microscopy. Journal of Physics: Conference Series, 209(1):012009, 2010. [WWW] [doi:10.1088/1742-6596/209/1/012009]



57. Knut Müller, Marco Schowalter, Jacob Jansen, Kenji Tsuda, John Titantah, Dirk Lamoen, and Andreas Rosenauer. Refinement of the 200 structure factor for GaAs using parallel and convergent beam electron nanodiffraction data. Ultramicroscopy, 109:802-814, 2009. [doi:10.1016/j.ultramic.2009.03.029] Keyword(s): GaAs, Structure factor refinement, Bonding, Parallel beam electron diffraction, Convergent beam electron diffraction.



58. Andreas Rosenauer, Katharina Gries, Knut Müller, Angelika Pretorius, Marco Schowalter, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Measurement of specimen thickness and composition in AlGaN/GaN using high-angle annular dark field images. Ultramicroscopy, 109(9):1171-1182, 2009. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2009.05.003] Keyword(s): Quantitative STEM Z-contrast imaging.



59. M. Schowalter, A. Rosenauer, J. T. Titantah, and D. Lamoen. Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure. Acta Crystallogr., Sect. A, 65(3):227-231, May 2009. [doi:10.1107/S0108767309004966]



60. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga$_{1-x}$In$_x$As/GaAs quantum wells. J. Appl. Phys., 105(8):084310, 2009. [WWW] [doi:10.1063/1.3115407] Keyword(s): arsenic compounds, density functional theory, gallium arsenide, gallium compounds, III-V semiconductors, indium compounds, lattice constants, Monte Carlo methods, nanostructured materials, semiconductor heterojunctions, semiconductor quantum wells.



61. T. Aschenbrenner, S. Figge, M. Schowalter, A. Rosenauer, and D. Hommel. Photoluminescence and structural analysis of a-plane InGaN layers. Journal of Crystal Growth, 310(23):4992-4995, 2008. Note: The Fourteenth International conference on Metalorganic Vapor Phase Epitax The 14th International conference on Metalorganic Vapor Phase Epitax. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2008.08.014] Keyword(s): A1. X-ray diffraction.



62. Abdul Kadir, M.R. Gokhale, Arnab Bhattacharya, Angelika Pretorius, and Andreas Rosenauer. {MOVPE} growth and characterization of InN/GaN single and multi-quantum well structures. Journal of Crystal Growth, 311(1):95-98, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2008.10.056] Keyword(s): A1. Transmission electron microscopy.



63. D. Litvinov, M. Schowalter, A. Rosenauer, B. Daniel, J. Fallert, W. Löffler, H. Kalt, and M. Hetterich. Determination of critical thickness for defect formation of CdSe/ZnSe heterostructures by transmission electron microscopy and photoluminescence spectroscopy. physica status solidi (a), 205(12):2892-2897, 2008. ISSN: 1862-6319. [doi:10.1002/pssa.200824151] Keyword(s): 68.37.Lp, 68.37.Og, 68.55.ag, 68.65.Fg, 78.55.Et.



64. A. Pretorius, T. Yamaguchi, C. Kübel, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigation of growth and dissolution of nano-islands grown by molecular beam epitaxy. Journal of Crystal Growth, 310(4):748-756, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2007.11.203] Keyword(s): A1. High resolution transmission electron microscopy.



65. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Size effects and strain state of Ga(1-x)In(x)As/GaAs multiple quantum wells: Monte Carlo study. Phys. Rev. B, 78:165326, October 2008. [doi:10.1103/PhysRevB.78.165326]



66. R. Kroeger, T. Paskova, S. Figge, D. Hommel, and A. Rosenauer. Interfacial structure of a-plane GaN grown on r-plane sapphire. Appl. Phys. Lett., 90:081918, 2007.



67. EHM Rossi, A. Rosenauer, and G. Van Tendeloo. Influence of strain, specimen orientation and background estimation on composition evaluation of InAs/GaAs by TEM. Philosophical Magazine, 87(29):4461-4473, 2007. [WWW] [doi:10.1080/14786430701551905]



68. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Bond length variation in Ga(1-x)In(x)As crystals from the Tersoff potential. J. Appl. Phys., 101(12):123508, 2007. [WWW] [doi:10.1063/1.2748338] Keyword(s): gallium arsenide, indium compounds, III-V semiconductors, ab initio calculations, bond lengths, crystal binding, elastic constants, melting point, band structure.



69. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Temperature effect on the 002 structure factor of ternary Ga(1-x)In(x)As crystals. Phys. Rev. B, 76(7):073303, August 2007. [doi:10.1103/PhysRevB.76.073303]



70. K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells. J. Appl. Phys., 102(8):083504, 2007. [WWW] [doi:10.1063/1.2794739] Keyword(s): annealing, gallium arsenide, gallium compounds, III-V semiconductors, impurity distribution, indium compounds, photoluminescence, Rutherford backscattering, semiconductor epitaxial layers, semiconductor heterojunctions, semiconductor quantum wells, transmission electron microscopy.



71. P. Kruse, M. Schowalter, D. Lamoen, A. Rosenauer, and D. Gerthsen. Determination of the mean inner potential in III-V semiconductors, Si and Ge by density functional theory and electron holography. Ultramicroscopy, 106(2):105-113, 2006. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2005.06.057] Keyword(s): Mean inner potential.



72. R. Kröger, C. Kruse, C. Roder, D. Hommel, and A. Rosenauer. Relaxation in crack-free AlN/GaN superlattices. physica status solidi (b), 243(7):1533-1536, 2006. ISSN: 1521-3951. [doi:10.1002/pssb.200565470] Keyword(s): 42.79.Fm, 68.37.Lp, 68.55.Ln, 68.65.Cd, 71.72.Ff, 83.85.St.



73. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in $In_{x}Ga_{1-{}x}As$. Phys. Rev. B, 74(16):165306, October 2006. [doi:10.1103/PhysRevB.74.165306]



74. A. Rosenauer, D. Gerthsen, and V. Potin. Strain state analysis of InGaN/GaN - sources of error and optimized imaging conditions. Phys. Status Solidi A, 203(1):176-184, January 2006. [doi:10.1002] Keyword(s): InGaN/GaN, In, Ga, N, optimised imaging conditions, optimized imaging conditions, aberrations, strain, strain state.



75. Th. Schmidt, M. Siebert, A. Pretorius, S. Gangopadhyay, S. Figge, J.I. Flege, L. Gregoratti, A. Barinov, D. Hommel, and J. Falta. Spectro-microscopy of Si doped GaN films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 246(1):79-84, 2006. Note: Synchrotron Radiation and Materials Science Proceedings of the E-MRS 2005 Symposium O on Synchrotron Radiation and Materials Science E-MRS 2005 Symposium O. ISSN: 0168-583X. [WWW] [doi:10.1016/j.nimb.2005.12.018] Keyword(s): Photoemission microscopy.



76. M. Schowalter, A. Rosenauer, and D. Gerthsen. Influence of surface segregation on the optical properties of semiconductor quantum wells. Applied Physics Letters, 88(11):111906-111906-3, 2006. ISSN: 0003-6951. [doi:10.1063/1.2184907] Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, photoluminescence, semiconductor quantum wells, surface segregation, 6835Dv, 7855Cr, 7867De.



77. M. Schowalter, A. Rosenauer, D. Lamoen, P. Kruse, and D. Gerthsen. Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold. Applied Physics Letters, 88(23):232108-232108-3, 2006. ISSN: 0003-6951. [doi:10.1063/1.2210453] Keyword(s): APW calculations, II-VI semiconductors, III-V semiconductors, ab initio calculations, aluminium compounds, cadmium compounds, density functional theory, electric potential, gallium compounds, gold, indium compounds, monolayers, wide band gap semiconductors, zinc compounds, 7361Ey, 7361Ga.



78. Meng-Ku Chen, Yung-Chen Cheng, Jiun-Yang Chen, Cheng-Ming Wu, C.C. Yang, Kung-Jen Ma, Jer-Ren Yang, and Andreas Rosenauer. Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells. Journal of Crystal Growth, 279(1-2):55-64, 2005. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2005.02.018] Keyword(s): A1. Segregation.



79. Yung-Chen Cheng, Cheng-Ming Wu, C. C. Yang, Gang Alan Li, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, and L. C. Chen. Effects of interfacial layers in InGaN/GaN quantum-well structures on their optical and nanostructural properties. Journal of Applied Physics, 98(1):014317, 2005. [WWW] [doi:10.1063/1.1978988] Keyword(s): indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, nanostructured materials, photoluminescence, electroluminescence, Stark effect.



80. T. Li, E. Hahn, D. Gerthsen, A. Rosenauer, A. Strittmatter, L. Reissmann, and D. Bimberg. Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope. Applied Physics Letters, 86(24):241911, 2005. [WWW] [doi:10.1063/1.1948517] Keyword(s): indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, electron beam effects, transmission electron microscopy, internal stresses.



81. E. Müller, P. Kruse, D. Gerthsen, M. Schowalter, A. Rosenauer, D. Lamoen, R. Kling, and A. Waag. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography. Applied Physics Letters, 86(15):154108-154108-3, 2005. ISSN: 0003-6951. [doi:10.1063/1.1901820] Keyword(s): II-VI semiconductors, electron holography, nanoparticles, transmission electron microscopy, wide band gap semiconductors, zinc compounds, 4240Lx, 6146+w, 6837Lp.



82. E. Piscopiello, A. Rosenauer, A. Passaseo, E. H. Montoya Rossi, and G. Van Tendeloo. Segregation in In(x)Ga(1-x)As/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition. Philosophical Magazine, 85(32):3857-3870, 2005. [doi:10.1080/147830500269402]



83. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron scattering in strained In(x)Ga(1-x)As. Phys. Rev. B, 72:085326, August 2005. [doi:10.1103/PhysRevB.72.085326] Keyword(s): structure factor, strain, InGaAs, In, Ga, As, first-principles calculation, electron scattering.



84. V.A. Volodin, M.D. Efremov, R.S. Matvienko, V.V. Preobrazhenskii, B.R. Semyagin, N.N. Ledentsov, I.R. Soshnikov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Dichroism in transmission of light by an array of self-assembled GaAs quantum wires on a nanofaceted A(311) surface. Physics of the Solid State, 47(2):366-369, 2005. ISSN: 1063-7834. [doi:10.1134/1.1866421]



85. Yung-Chen Cheng, En-Chiang Lin, Cheng-Ming Wu, C.C. Yang, Jer-Ren Yang, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, L.C. Chen, Chang-Chi Pan, and Jen-Inn Chyi. Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions. Applied Physics Letters, 84(14):2506-2508, 2004. ISSN: 0003-6951. [doi:10.1063/1.1690872] Keyword(s): III-V semiconductors, gallium compounds, indium compounds, photoluminescence, quantum confined Stark effect, semiconductor doping, semiconductor quantum wells, silicon, wide band gap semiconductors, 6172Vv, 6865Fg, 7855Cr, 7867De.



86. Yung-Chen Cheng, Cheng-Ming Wu, Meng-Kuo Chen, C. C. Yang, Zhe-Chuan Feng, Gang Alan Li, Jer-Ren Yang, Andreas Rosenauer, and Kung-Je Ma. Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers. Applied Physics Letters, 84(26):5422-5424, 2004. [WWW] [doi:10.1063/1.1767603] Keyword(s): indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, photoluminescence, electroluminescence, monolayers.



87. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Hetterich, A. Grau, Ph. Gilet, and L. Grenouillet. Determination of the nitrogen distribution in InGaNAs/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 85:3743-3745, 2004.



88. D. Litvinov, M. Schowalter, A. Rosenauer, D. Gerthsen, T. Passow, H. Heinke, and D. Hommel. Influence of the cap layer growth temperature on the Cd distribution in CdSe/ZnSe heterostructures. Journal of Crystal Growth, 263(1-4):348-352, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.11.073] Keyword(s): A1. Desorption.



89. R. Otto, H. Kirmse, I. Häusler, W. Neumann, A. Rosenauer, D. Bimberg, and L. Muller-Kirsch. Determination of composition and strain field of a III/V quaternary quantum dot system. Applied Physics Letters, 85(21):4908-4910, 2004. ISSN: 0003-6951. [doi:10.1063/1.1823602] Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, internal stresses, nucleation, semiconductor quantum dots, transmission electron microscopy, 6835Gy, 6837Lp, 6865Hb.



90. V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano, and N. Grandjean. Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy. Journal of Crystal Growth, 262(1-4):145-150, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.10.082] Keyword(s): A1. Metalorganic vapor phase epitaxy.



91. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668-1683, 2003. ISSN: 1610-1642. [doi:10.1002/pssc.200303129] Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.



92. P. Kruse, A. Rosenauer, and D. Gerthsen. Determination of the mean inner potential in III-V semiconductors by electron holography. Ultramicroscopy, 96(1):11-16, 2003. ISSN: 0304-3991. [WWW] [doi:10.1016/S0304-3991(02)00376-5] Keyword(s): III-V semiconductors.



93. D. Litvinov, A. Rosenauer, and D. Gerthsen. Transformation of Shockley into Frank stacking faults in a ZnS 0.04 Se 0.96 /GaAs (001) heterostructure. Philosophical Magazine Letters, 83(9):575-581, 2003. [doi:10.1080/09500830310001594282]



94. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 83(15):3123-3125, October 2003. Keyword(s): growth, GaSb, Ga, Sb, GaAs, Ga, As, quantum wells, quantum well,.



95. E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, V. Perez-Solorzano, M. Jetter, and F. Scholz. In-Redistribution in a GaInN Quantum Well upon Thermal Annealing. physica status solidi (b), 234(3):738-741, 2002. ISSN: 1521-3951. [doi:10.1002/1521-3951(200212)234:3<738::AID-PSSB738>3.0.CO;2-X] Keyword(s): 64.75.+g, 66.30.Xj, 68.37.Lp, 78.55.Cr, 81.05.Ea.



96. D. Litvinov, A. Rosenauer, D. Gerthsen, N. N. Ledentsov, D. Bimberg, G. A. Ljubas, V. V. Bolotov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, and I. P. Soshnikov. Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface. Applied Physics Letters, 81(6):1080-1082, 2002. [WWW] [doi:10.1063/1.1497994] Keyword(s): gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor quantum wires, semiconductor epitaxial layers, semiconductor superlattices, transmission electron microscopy, self-assembly, photoluminescence.



97. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546-6552, 2002. ISSN: 0021-8979. [doi:10.1063/1.1516248] Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.



98. D. Gerthsen, B. Neubauer, A. Rosenauer, T. Stephan, H. Kalt, O. Schon, and M. Heuken. InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition. Applied Physics Letters, 79(16):2552-2554, 2001. ISSN: 0003-6951. [doi:10.1063/1.1409949] Keyword(s): III-V semiconductors, MOCVD, gallium compounds, indium compounds, lattice constants, photoluminescence, red shift, semiconductor growth, semiconductor quantum wells, spectral line intensity, transmission electron microscopy, wide band gap semiconductors, 6865Fg, 7855Cr, 7867De, 8107St, 8115Gh.



99. N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Soshnikov, V. Shchukin, V. Ustinov, A. Egorov, A. Zukov, V. Volodin, M. Efremov, V. Preobrazhenskii, B. Semyagin, D. Bimberg, and Zh. Alferov. Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces. Journal of Electronic Materials, 30:463-470, 2001. ISSN: 0361-5235. [doi:10.1007/s11664-001-0084-1] Keyword(s): Chemie und Materialwissenschaften.



100. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in In(x)Ga(1-x)As/GaAs$ Stranski-Krastanow layers}. Phys. Rev. B, 64(24):245334, December 2001. [doi:10.1103/PhysRevB.64.245334]



101. A Rosenauer, D Van Dyck, M Arzberger, and G Abstreiter. Compositional analysis based on electron holography and a chemically sensitive reflection. Ultramicroscopy, 88(1):51-61, 2001. ISSN: 0304-3991. [WWW] [doi:10.1016/S0304-3991(00)00115-7] Keyword(s): Compositional analysis.



102. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Investigation of In segregation in InAs/AlAs quantum-well structures. Appl. Phys. Lett., 79(26):4426-4428, December 2001. Keyword(s): segregation, InAs, In, As, InAs/AlAs, AlAs, Al, As, quantum-well.



103. I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, Yu.G. Musikhin, A.P. Kartashova, A.S. Usikov, A.F. Tsatsul’nikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A.C. Plaut, A.A. Hoffmann, and D. Bimberg. Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots. Semiconductors, 34(4):481-487, 2000. ISSN: 1063-7826. [doi:10.1134/1.1188011]



104. A. Rosenauer, W. Oberst, D. Litvinov, D. Gerthsen, A. Förster, and R. Schmidt. Structural and chemical investigation of $In_{0.6}Ga_{0.4}As$ Stranski-Krastanow layers buried in GaAs by transmission electron microscopy. Phys. Rev. B, 61(12):8276-8288, March 2000. [doi:10.1103/PhysRevB.61.8276]



105. I.P. Soshnikov, V.V. Lundin, A.S. Usikov, I.P. Kalmykova, N.N. Ledentsov, A. Rosenauer, B. Neubauer, and D. Gerthsen. Specifics of MOCVD formation of In(x)Ga(1−x)N inclusions in a GaN matrix. Semiconductors, 34(6):621-625, 2000. ISSN: 1063-7826. [doi:10.1134/1.1188041]



106. A F Tsatsul'nikov, I L Krestnikov, W V Lundin, A V Sakharov, A P Kartashova, A S Usikov, Zh I Alferov, N N Ledentsov, A Strittmatter, A Hoffmann, D Bimberg, I P Soshnikov, D Litvinov, A Rosenauer, D Gerthsen, and A Plaut. Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition. Semiconductor Science and Technology, 15(7):766, 2000. [WWW]



107. D. Luerssen, R. Bleher, H. Richter, Th. Schimmel, H. Kalt, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, K. Ohkawa, B. Jobst, and D. Hommel. Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures. Applied Physics Letters, 75(25):3944-3946, 1999. [WWW] [doi:10.1063/1.125502] Keyword(s): zinc compounds, magnesium compounds, II-VI semiconductors, wide band gap semiconductors, semiconductor quantum wells, stacking faults, defect states, interface states, interface structure, photoluminescence, atomic force microscopy, transmission electron microscopy, excitons.



108. A. Rosenauer and D. Gerthsen. Composition evaluation by the lattice fringe analysis method using defocus series. Ultramicroscopy, 76(1):49-60, 1999.



109. E Schomburg, S Brandl, K.F Renk, N.N Ledentsov, V.M Ustinov, A.E Zhukov, A.R Kovsh, A.Yu Egorov, R.N Kyutt, B.V Volovik, P.S Kop'ev, Zh.I Alferov, A Rosenauer, D Litvinov, D Gerthsen, D.G Pavel'ev, and Y.I Koschurinov. Miniband transport in a semiconductor superlattice with submonolayer barriers. Physics Letters A, 262(4-5):396-401, 1999. ISSN: 0375-9601. [WWW] [doi:10.1016/S0375-9601(99)00612-X] Keyword(s): 85.30.Vw.



110. M. Strassburg, R. Heitz, V. Türck, S. Rodt, U.W. Pohl, A. Hoffmann, D. Bimberg, I.L. Krestnikov, V.A. Shchukin, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices. Journal of Electronic Materials, 28(5):506-514, 1999. ISSN: 0361-5235. [doi:10.1007/s11664-999-0103-1] Keyword(s): CdSe/(Zn, Mg)(S, Se), excitonic localization, gain, resonant waveguiding.



111. A.F. Tsatsul’Nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maximov, A.Yu Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, P.S. Kop’Ev, Zh.I. Alferov, I.A. Kozin, M.V. Belousov, I.P. Soshnikov, P. Werner, D. Litvinov, U. Fischer, A. Rosenauer, and D. Gerthsen. Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition. Journal of Electronic Materials, 28(5):537-541, 1999. ISSN: 0361-5235. [doi:10.1007/s11664-999-0108-9] Keyword(s): Lasing, quantum dots, submonolayer, vertical correlation.



112. Stephan Kaiser, Herbert Preis, Wolfgang Gebhardt, Oliver Ambacher, Helmut Angerer, Martin Stutzmann, Andreas Rosenauer, and Dagmar Gerthsen. Quantitative Transmission Electron Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al$_{ extbf{2}}$O$_{ extbf{3}}$(0001). Japanese Journal of Applied Physics, 37(Part 1, No. 1):84-89, 1998. [WWW] [doi:10.1143/JJAP.37.84]



113. B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, and M. Stutzmann. Analysis of composition fluctuations on an atomic scale in Al(0.25)Ga(0.75)N by high-resolution transmission electron microscopy. Applied Physics Letters, 73(7):930-932, 1998. [WWW] [doi:10.1063/1.122041] Keyword(s): aluminium compounds, gallium compounds, wide band gap semiconductors, III-V semiconductors, stoichiometry, fluctuations, transmission electron microscopy, lattice constants, semiconductor heterojunctions, interface structure, semiconductor epitaxial layers.



114. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Förster. Composition evaluation by lattice fringe analysis. Ultramicroscopy, 72:121-133, 1998. [doi:10.1016/S0304-3991(98)00002-3]



115. M. Strassburg, V. Kutzer, U. W. Pohl, A. Hoffmann, I. Broser, N. N. Ledentsov, D. Bimberg, A. Rosenauer, U. Fischer, D. Gerthsen, I. L. Krestnikov, M. V. Maximov, P. S. Kop'ev, and Zh.I. Alferov. Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix. Applied Physics Letters, 72(8):942-944, 1998. [WWW] [doi:10.1063/1.120880] Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor quantum dots, island structure, monolayers, refractive index, transmission electron microscopy, biexcitons, excitons, phonon spectra, quantum well lasers, stimulated emission.



116. Marcus J. Kastner, Gabriella Leo, Doris Brunhuber, Andreas Rosenauer, Herbert Preis, Berthold Hahn, Markus Deufel, and Wolfgang Gebhardt. Investigations on strain relaxation of ZnS(x)Se(1−x) layers grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 172(1-2):64-74, 1997. ISSN: 0022-0248. [WWW] [doi:10.1016/S0022-0248(96)00722-1]



117. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Forster. Composition evaluation of In(x)Ga(1-x)As Stranski-Krastanow-island structures by strain state analysis. Applied Physics Letters, 71(26):3868-3870, 1997. [WWW] [doi:10.1063/1.120528] Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, island structure, transmission electron microscopy, lattice constants, molecular beam epitaxial growth, semiconductor epitaxial layers, finite element analysis, segregation, semiconductor growth.



118. U. Woggon, W. Langbein, J. M. Hvam, A. Rosenauer, T. Remmele, and D. Gerthsen. Electron microscopic and optical investigations of the indium distribution in GaAs capped In(x)Ga(1-x)As islands. Applied Physics Letters, 71(3):377-379, 1997. [WWW] [doi:10.1063/1.119542] Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, buried layers, transmission electron microscopy, photoluminescence, molecular beam epitaxial growth, semiconductor growth, semiconductor epitaxial layers.



119. Marcus J. Kastner, Berthold Hahn, Claus Auchter, Markus Deufel, Andreas Rosenauer, and Wolfgang Gebhardt. Structural characterization and MOVPE growth of ZnCdSe and ZnSSe layers, quantum wells and superlattices. Journal of Crystal Growth, 159(1-4):134-137, 1996. Note: Proceedings of the seventh international conference on II-VI compouds and devices. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(95)00761-X]



120. A. Rosenauer, T. Reisinger, F. Franzen, G. Schutz, B. Hahn, K. Wolf, J. Zweck, and W. Gebhardt. Transmission electron microscopy and reflected high-energy electron-diffraction investigation of plastic relaxation in doped and undoped ZnSe/GaAs(001). Journal of Applied Physics, 79(8):4124-4131, 1996. [WWW] [doi:10.1063/1.361776] Keyword(s): DISLOCATIONS, DOPED MATERIALS, EPITAXIAL LAYERS, MOLECULAR BEAM EPITAXY, PLASTICITY, RHEED, STRESS RELAXATION, TEM, VPE, ZINC SELENIDES.



121. K. Tillmann, A. Thust, M. Lentzen, P. Swiatek, A. Förster, K. Urban, W. Laufs, D. Gerthsen, T. Remmele, and A. Rosenauer. Determination of segregation, elastic strain and thin-foil relaxation in In(x)Ga(1-x)As islands on GaAs(001) by high resolution transmission electron microscopy. Philosophical Magazine Letters, 74(5):309-315, 1996. [doi:10.1080/095008396180029]



122. W.S. Kuhn, A. Lusson, B. Qu'Hen, C. Grattepain, H. Dumont, O. Gorochov, S. Bauer, K. Wolf, M. Wörz, T. Reisinger, A. Rosenauer, H.P. Wagner, H. Stanzl, and W. Gebhardt. The metal organic vapour phase epitaxy of ZnTe: III. Correlation of growth and layer properties. Progress in Crystal Growth and Characterization of Materials, 31(1-2):119-177, 1995. ISSN: 0960-8974. [WWW] [doi:10.1016/0960-8974(95)00018-6]



123. S. Lankes, B. Hahn, C. Meier, F. Hierl, M. Kastner, A. Rosenauer, and W. Gebhardt. Photoreflectance measurements on ZnSe/ZnS0.25Se0.75SQW. physica status solidi (a), 152(1):123-131, 1995. ISSN: 1521-396X. [doi:10.1002/pssa.2211520113]



124. A. Rosenauer, T. Reisinger, E. Steinkirchner, J. Zweck, and W. Gebhardt. High resolution transmission electron microscopy determination of Cd diffusion in CdSeZnSe single quantum well structures. Journal of Crystal Growth, 152(1-2):42-50, 1995. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(95)00083-6]



125. K Wolf, S Jilka, A Rosenauer, G Schutz, H Stanzl, T Reisinger, and W Gebhardt. High-resolution X-ray diffraction investigations of epitaxially grown ZnSe/GaAs layers. Journal of Physics D: Applied Physics, 28(4A):A120, 1995. [WWW]



126. M. Grün, M. Hetterich, C. Klingshirn, A. Rosenauer, J. Zweck, and W. Gebhardt. Strain relief and growth modes in wurtzite type epitaxial layers of CdSe and CdS and in CdSe/CdS superlattices. Journal of Crystal Growth, 138(1-4):150-154, 1994. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(94)90797-8]



127. A. Naumov, H. Stanzl, K. Wolf, A. Rosenauer, S. Lankes, and W. Gebhardt. Exciton recombination in ZnSexTe1−x/ZnTe {QWs} and ZnSexTe1−x epilayers grown by metalorganic vapour phase epitaxy. Journal of Crystal Growth, 138(1-4):595-600, 1994. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(94)90875-3]



128. S. Bauer, A. Rosenauer, P. Link, W. Kuhn, J. Zweck, and W. Gebhardt. Misfit dislocations in epitaxial ZnTe/GaAs (001) studied by {HRTEM}. Ultramicroscopy, 51(1-4):221-227, 1993. ISSN: 0304-3991. [WWW] [doi:10.1016/0304-3991(93)90148-Q]



129. M. Grun, C. Klingshirn, A. Rosenauer, J. Zweck, and W. Gebhardt. Spatial confinement of misfit dislocations at the interface of CdSe/GaAs(111). Applied Physics Letters, 63(21):2947-2948, 1993. ISSN: 0003-6951. [doi:10.1063/1.110281] Keyword(s): 6172Ff, 6855Ln, 6865+g, BURGERS VECTOR, CADMIUM SELENIDES, ELECTRON MICROSCOPY, EPITAXIAL LAYERS, GALLIUM ARSENIDES, HETEROSTRUCTURES, INTERFACE STRUCTURE, MISFIT DISLOCATIONS.

1. A. Kirsch, M.M. Murshed, M. Schowalter, M. Curti, C.B. Mendive, and T. M. Gesing. Comparative band gap determinatio of photocatalytic active Bi2Fe4O9. In DGK 2016 conference in Stuttgart, Germany, 2016.



2. M. Müller, S. Metzner, T. Hempel, P. Veit, F. Bertram, F F Krause, T. Mehrtens, K. Müller-Caspary, A Rosenauer, T. Schimpke, A. Avramescu, M. Strassburg, and J. Christen. Optical, structural and compositional nano-scale characterization of InGaN/GaN core-shell microrod heterostructucom (Talk). In Proceedings of the Society of Photo-Optical Instrumentation Engineers Photonics West 2016 (SPIE Photonics West 2016) , San Francisco (USA), 2016.



3. Knut Müller-Caspary, Florian F. Krause, Armand Béché, Martial Duchamp, Marco Schowalter, Stefan Löffler, Vadim Migunov, Florian Winkler, Martin Huth, Robert Ritz, Sebastian Ihle, Martin Simson, Henning Ryll, Heike Soltau, Lothar Strüder, Josef Zweck, Peter Schattschneider, Rafal Dunin-Borkowski, Johan Verbeeck, and Andreas Rosenauer. Measurement of Atomic Electric Fields by Scanning Transmission Electron Microscopy (STEM) Employing Ultrafast Detectors. In Microscopy and Microanalysis 2016, Columbus (OH/USA), [Invited Talk], volume 22, pages 484-485, July 24-28th 2016. Microscopy Society of America. [WWW] [doi:10.1017/S1431927616003275] Keyword(s): DPC, pnccd.



4. Knut Müller-Caspary, Thorsten Mehrtens, Marco Schowalter, Tim Grieb, Andreas Rosenauer, Florian F. Krause, Christoph Mahr, and Pavel Potapov. ImageEval. A software for the processing, evaluation and acquisition of (S)TEM images. In European Microscopy Congress 2016, Lyon (F), [Poster IM03-286], 2016. [doi:10.1002/EMC2016.0677]



5. Knut Müller-Caspary, Andreas Oelsner, and Pavel Potapov. STEM Strain Measurement From a Stream of Diffraction Patterns Recorded on a Pixel-Free Delay-Line Detector. In Microscopy and Microanalysis 2016, Columbus (OH/USA), [Poster], July 24-28th 2016.



6. Knut Müller-Caspary, Andreas Oelsner, Pavel Potapov, and Thomas Schmidt. Analysis of strain and composition in GeSi/Si heterostructures by electron microscopy. In European Microscopy Congress 2016, Lyon (F), [Talk MS03-OP239], 2016. [doi:10.1002/EMC2016.0311]



7. Knut Müller-Caspary, Oliver Oppermann, Tim Grieb, Andreas Rosenauer, Marco Schowalter, Florian F. Krause, Thorsten Mehrtens, Pavel Potapov, Andreas Beyer, and Kerstin Volz. Angle-resolved Scanning Transmission Electron Microscopy (ARSTEM) for materials analysis. In European Microscopy Congress 2016, Lyon (F), [Poster IM06-350], 2016. [doi:10.1002/EMC2016.0259]



8. Florian Fritz Krause, Andreas Rosenauer, Knut Müller-Caspary, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. In Frontiers of Electron Microscopy in Materials Science (FEMMS) 2015, Lake Tahoe (CA/USA), [Invited Talk], September 13-18th 2015.



9. Johannes Ledig, Tilman Schimpke, Gregor Scholz, Florian F. Krause, Andreas Rosenauer, Martin Strassburg, Hergo-Heinrich Wehmann, and Andreas Waag. Comparison of electroluminescence and IV characteristics along a GaN based core-shell LED taken by point contacts inside a CL-SEM (Poster). In Proceedings of the Microscopy Conference 2015 (MC 2015), Göttingen (D), 2015.



10. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. A quantum mechanical approach to electron picodiffraction reveals atomic electric fields. In Materials Research Society Spring Meeting 2015 (MRS 2015), San Francisco (USA) [Talk], volume Symposium ZZ, Talk 2.02, 2015.



11. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields. In Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK) [Talk], volume Session 4b (Wed, April 1st), 2015.



12. M. Müller, S. Metzner, T. Hempel, P. Veit, F. Bertram, F. F. Krause, T. Mehrtens, K. Müller-Caspary, A. Rosenauer, T. Schimpke, M. Strassburg, and J. Christen. Nanoscale Characterization of InGaN/GaN core-shell microrods: Correlation of the optical properties and the composition of the InGaN single quantum well (Talk). In Proceedings of the International Conference on Nitride Semiconductors 2015 (ICNS 11), Peking (CHN), 2015.



13. Knut Müller-Caspary, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Oliver Oppermann, Tim Grieb, Andreas Oelsner, Pavel Potapov, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields. In Frontiers of Electron Microscopy in Materials Science (FEMMS) 2015, Lake Tahoe (CA/USA), [Invited Talk], September 13-18th 2015.



14. Andreas Rosenauer, Florian F. Krause, Knut Müller, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. In Materials Research Society Spring Meeting 2015 (MRS 2015), San Francisco (USA) [Talk], volume Symposium ZZ, Talk 2.02, 2015.



15. Josef Zweck, Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Peter Schattschneider, and Andreas Rosenauer. Exploring the space between atoms: Interatomic electric fields imaged by STEM-DPC. In Multinational Congress on Microscopy (MCM) 2015, Eger (Hungary) [Invited talk], 2015.



16. Knut Müller, Henning Ryll, Ivan Ordavo, Sebastian Ihle, Martin Huth, Martin Simson, Josef Zweck, Kerstin Volz, Heike Soltau, Andreas Rosenauer, Pavel Potapov, Marco Schowalter, Lothar Strüder, Christoph Mahr, and Daniel Erben. Strain Analysis from Nano-beam Electron Diffraction Patterns Recorded on Direct Electron Charge-coupled Devices. In Microscience Microscopy Congress, MMC 2014, Manchester (UK), July, 2014 [invited talk PS3.1.4], 2014.



17. T. Schimpke, M. Binder, B. Galler, J. Hartmann, A. Waag, F. F. Krause, T. Mehrtens, A. Rosenauer, M. Müller, S. Metzner, P. Veit, F. Bertram, J. Christen, and H-J. Lugauer M. Strassburg1. Control of emission wavelength gradient along the m-plane facet of high aspect-ratio core-shell InGaN/GaN microrod LED structures (Talk). In Proceedings des Arbeitskreistreffens der Deutsche Gesellschaft für Kristallwachstum und Kristallzüchtung e.V. Arbeitskreis Epitaxie von III-V-Halbleitern 2014(AK III-V DGKK 29), Magdeburg (D), 2014.



18. Tim Grieb, Knut Müller, Emanuel Cadel, Rafael Fritz, Nils Neugebohrn, Etienne Talbot, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Chemical composition analysis of dilute GaNAs and InGaNAs by high-angle annular dark field STEM. In International Conference on Electron Microscopy and XXIV Annual Meeting of the Electron Microscope Society of India (EMSI) 2013, Kolkata (India) [Talk], 2013.



19. T. Grieb, K. Müller, R. Fritz, V. Grillo, M. Schowalter, K. Volz, and A. Rosenauer. Avoiding surface strain field induced artifacts in 2d chemical mapping of dilute GaNAs quantum wells by HAADF STEM. In Proceedings of the Microscopy Conference 2013 (MC 2013, Regensburg) Germany [Poster], volume 1: Instrumentation and Methods, pages IM.1.P008, 2013.



20. Dominik Heinz, Mohamed Fikry, Timo Aschenbrenner, Marco Schowalter, Tobias Meisch, Manfred Madel, Florian Huber, Matthias Hocker, Ingo Tischer, Thorsten Mehrtens, Knut Müller, Manuel Frey, Julian Jakob, Benjamin Neuschl, Detlef Hommel, Andreas Rosenauer, Klaus Thonke, and Ferdinand Scholz. Ga(In)N micro- and nanostructures for optical gas sensing. In Statusworkshop Kompetenznetz Funktionelle Nanostrukturen [Poster], 2013.



21. Marco Schowalter, Ingo Stoffers, Florian Krause, Thorsten Mehrtens, Knut Müller, Malte Fandrich, Timo Aschenbrenner, Detlef Hommel, and Andreas Rosenauer. Composition determination using HAADF-STEM in AlGaN/GaN heterostructures revisited. In Microscopy Conference 2013 (MC 2013, Regensburg) [Poster Presentation], volume 1: Instrumentation and Methods, pages IM.1.P028, 2013.



22. Ingo Stoffers, Marco Schowalter, Florian Krause, Thorsten Mehrtens, Knut Müller, Malte Fandrich, Timo Aschenbrenner, Detlef Hommel, and Andreas Rosenauer. Composition quantification from HAADF-STEM in AlGaN/GaN heterostructures revisited. In Microscopy of Semiconducting Materials 2013 (MSMX VIII),Oxford (UK) [Poster Presentation], 2013.



23. Timo Aschenbrenner, Heiko Dartsch, Elahe Zakizadeh, Carsten Laurus, Stephan Figge, Alexander Würfel, Thorsten Mehrtens, Andreas Rosenauer, and Detlef Hommel. Enhanced Carrier Confinement in InGaN Quantums Dots by Al(In,Ga)N Barrier Layers. In ICMOVPE - XVI Busan, (Korea) [Talk], 2012.



24. Stephanie Bley, Thorsten Mehrtens, Parlapalli Venkata Satyam, and Andreas Rosenauer. Optimierung der Präparation von GaN-basierten Proben mittels Niedrigenergie-Ionendünnung für (S)TEM. In DPG Frühjahrstagung, Berlin (Germany) [Talk], number HL 64.7, pages 240, 2012.



25. Malte Fandrich, Timo Aschenbrenner, Stephan Figge, Thorsten Mehrtens, Andreas Rosenauer, and Detlef Hommel. AlInN/GaN-heterostructures for sensing applications. In Verhandlungen der DPG, number HL 73.1, pages 245, 2012.



26. Malte Fandrich, Timo Aschenbrenner, Thorsten Klein, Stephan Figge, Carsten Kruse, Thorsten Mehrtens, Andreas Rosenauer, and Detlef Hommel. Nitride Based Heterostructures with Ga- and N-Polarity for Sensing Applications. In ICMOVPE - XVI [Talk], 2012.



27. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A method to avoid strain field induced artifacts in 2D chemical mapping of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis [Talk 595], volume 18, pages 1028-1029, 2012. [doi:10.1017/S143192761200699X]



28. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A new method for true 2d chemical mapping: strain-field unaffected evaluation of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis (M&M) conference 2012, Phoenix (USA) [Poster], 2012.



29. Lars Hoffmann, Heiko Bremers, Holger Jönen, Uwe Rossow, Thorsten Mehrtens, Marco Schowalter, Andreas Rosenauer, and Andreas Hangleiter. STEM and XRD investigations of ultra thin GaInN/GaN quantum wells with high indium content. In Verhandlungen der DPG, number HL 64.6, pages 240, 2012.



30. L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, T. Mehrtens, M. Schowalter, A. Rosenauer, and A. Hangleiter. STEM and XRD investigations of ultra-thin GaInN/GaN quantum wells with high indium content. In International Workshop on Nitride Semiconductors 2012 [Talk], 2012.



31. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain analysis by nano-beam electron diffraction (SANBED) in semiconductor nanostructures [Invited talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, pages 36, 2012. Keyword(s): SANBED.



32. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor nanostructures by convergent electron nanoprobe diffraction [Talk]. In Verhandlungen der Deutschen Physikalischen Gesellschaft, volume 47, pages 312, 2012.



33. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Alexander Würfel, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Lars Hoffmann, Andreas Hangleiter, S. A. Gerstl, Pyuck-Pa Choi, and Dirk Raabe. Measurement of composition and strain in InGaN quantum dots by STEM [Plenary talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, EMSI2012, Bengaluru (Indien), July 4, 2012 [invited talk], pages 25, 2012.



34. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Measurement of composition and strain by STEM. In Microscopy and Microanalysis 2012 (M&M2012), Phoenix, Arizona, July 29-August 2 [Invited talk], volume 18, pages 1804-1805, 2012. [doi:10.1017/S1431927612010872]



35. Uwe Rossow, Andreas Kruse, Holger Jönen, Lars Hoffmann, Fedor Ketzer, Torsten Langer, Ronald Buss, Heiko Bremers, Andreas Hangleiter, Thorsten Mehrtens, Marco Schowalter, and Andreas Rosenauer. Optimizing the Growth Process of the Active Zone in GaN Based Laser Structures for the Long Wavelength Region. In ICMOVPE - XVI [Talk], 2012.



36. Heiko Dartsch, Christian Tessarek, Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. Electroluminescence from InGaN quantum dots in a monolithically grown GaN/AlInN cavity. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.



37. T. Grieb, K. Müller, O. Rubel, R. Fritz, C. Gloistein, N. Neugebohrn, M. Schowalter, K. Volz, and A. Rosenauer. Determination of Nitrogen concentration in dilute GaNAs by STEM HAADF Z-contrast imaging. In MSM 2011 Cambridge, U.K. [talk] talk D13, 2011.



38. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of nitrogen concentration in dilute GaNAs by STEM HAADF Z-contrast imaging. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.



39. T. Grieb, K. Müller, O. Rubel, R. Fritz, M. Schowalter, K. Volz, and A. Rosenauer. STEM strain state analysis in combination with HAADF intensity evaluation to determine chemical composition of GaNAs quantum wells. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel), volume 1: Instrumentation and Methods, pages IM2.P120, 2011. DGE - German Society for Electron Microscopy.



40. L. Hoffmann, H. Bremer, H. Jönen, U. Rossow, J. Thalmair, J. Zweck, M. Schowalter, A. Rosenauer, and A. Hangleiter. Strain Relaxation Mechanisms in Green Emitting GaInN/GaN Laser Diode Structures. In ICNS 9 Glasgow, U.K., 2011 [talk] talk B4.3, 2011.



41. Lars Hoffmann, Heiko Bremers, Holger Joenen, Uwe Rossow, Johannes Thalmair, Josef Zweck, Marco Schowalter, Andreas Rosenauer, and Andreas Hangleiter. Strain Relaxation Mechanisms in Green Emitting GaInN/GaN Laser Diode Structures. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.



42. R. Imlau, K. Müller, M. Schowalter, O. Rubel, R. Fritz, K. Volz, and A. Rosenauer. Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing. In MSM 2011 Cambridge, U. K. [poster] poster 2.16, 2011.



43. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S. A. Gerstl, Pyuck-Pa Choi, Dierk Raabe, Adrian Avramescu, and Andreas Rosenauer. Determination of composition in InGaN/GaN heterostructures using (S)TEM, Atom Probe Tomography and Photoluminescence. In E-MRS Spring Meeting 2011, Nice (France) [Talk], 2011.



44. A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, P. V. Satyam, S. Bley, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, J. Gutowski, S. S. A. Gerstl, P. P. Choi, and D. Raabe. Composition mapping in InGaN with quantitative STEM Z-contrast imaging. In ICNS Glasgow 2011 [Invited talk], 2011.



45. M. Schowalter, M. Tewes, K. Frank, R. Imlau, A. Rosenauer, H.S. Lee, O.G. Rastelli, M. Schmidt, M. Tavast, T. Leinonen, and M. Guina. Investigation of diffusion in AlAs/GaAs distributed Bragg reflectors using HAADF STEM imaging. In MSM 2011 Cambridge, U.K. [poster] poster P2.12, 2011.



46. T. Aschenbrenner, G. Kunert, W. Freund, S. Figge, C. Kruse, M. Schowalter, C. Vogt, A. Rosenauer, J. Kalden, K. Sebald, J. Gutowski, and D Hommel. High quality GaN nanorods: from catalyst free growth to an LED. In presented at IWN 2010, 2010.



47. Stephanie Bley, Thorsten Mehrtens, and Andreas Rosenauer. Präparation von GaN-basierten Proben mittels Niedrigenergie-Ionendünnung für Transmissionselektronenmikroskopie. In DPG Frühjahrstagung, Regensburg, number HL 34.33, 2010.



48. Rafael Fritz, Andreas Beyer, Oleg Rubel, Wolfgang Stolz, Kerstin Volz, Knut Müller, Marco Schowalter, Andreas Rosenauer, Ines Häusler, Anna Mogilatenko, Holm Kirmse, and Wolfgang Neumann. Quantitative analysis of chemical composition in Ga(AsP)-heterostructures using HAADF-STEM in a JEOL 2200FS. In International Microscopy Congress (IMC17) Rio de Janeiro (Brazil) [Poster presentation], 2010.



49. T. M. Gesing, M. Schowalter, C. Weidenthaler, A. Rosenauer, H. Schneider, and R.X. Fischer. Synthesis and properties of Mullite-type Bi(1-x)Sr(x)2M1 4OM2 9-x/2 (M=Al, Ga,Fe). In presented at BMEA, Taiwan (2010), 2010.



50. S. Pokhrel, K. Grossmann, J. Birkenstock, J.I. Flege, J. Falta, M. Schowalter, A. Rosenauer, N. Barsan, U. Weimar, and L. Mädler. Aerosol made Sn doped In2O3 (ITO) nanoparticles for gas sensing application. In presented at IAC conference (2010), 2010.



51. M. Schowalter, T. Aschenbrenner, C. Kruse, D. Hommel, and A. Rosenauer. TEM characterization of catalyst- and mask-free grown GaN nanorods. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012020, 2010.



52. J. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Ab initio based atomic scattering amplitudes and 002 electron structure factor of GaInAs/GaAs quantum wells. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012040, 2010.



53. Timo Aschenbrenner, Gerd Kunert, Carsten Kruse, Stephan Figge, Joachim Kalden, Kathrin Sebald, Knut Müller, Marco Schowalter, Jürgen Gutowski, Andreas Rosenauer, and Detlef Hommel. Catalyst- and mask-free grown GaN nanocolumns. In E-MRS Fall Meeting 2009, Warsaw (Poland) [Invited talk], 2009.



54. John T. Titantah, Dirk Lamoen, Marco Schowalter, Andreas Rosenauer, and Knut Müller. Ab initio based atomic scattering amplitudes and 002 electron structure factor of GaInAsN / GaAs quantum wells. In 32nd International Symposium on Dynamical Properties of Solids, Antwerp (Belgium) [Poster presentation], September 2009.



55. T. Aschenbrenner, S. Figge, D. Hommel, M. Schowalter, and A. Rosenauer. MOVPE-growth of a-plane InGaN quantum wells on GaN buffer layers on r-plane sapphire substrates. In IC-MOVPE, 1.-6. June 2008, 2008.



56. H. Dartsch, S. Figge, T. Aschenbrenner, A. Pretorius, A. Rosenauer, and D. Hommel. Strain compensated AlGaN/GaN-Bragg-reflectors with high Al content grown by MOVPE. In IC-MOVPE, 1.-6. June 2008, 2008.



57. Knut Müller, Marco Schowalter, Andreas Rosenauer, Jacob Jansen, John Titantah, and Dirk Lamoen. Measurement of 002 structure factors for GaAs from electron spot diffraction patterns. In Verhandlungen der DPG [Talk], number HL 33.2, pages 376, 2008.



58. Knut Müller, Marco Schowalter, Andreas Rosenauer, Dirk Lamoen, John Titantah, Jacob Jansen, and Kenji Tsuda. Measurement of GaAs structure factors from the diffraction of parallel and convergent electron nanoprobes. In M. Luysberg, K. Tillmann, and T. Weirich, editors, EMC 2008, Vol. 1: Instrumentation and methods [Poster], pages 215-216, 2008. [doi:10.1007/978-3-540-85156-1_108]



59. Knut Müller, Marco Schowalter, Andreas Rosenauer, John Titantah, Dirk Lamoen, Jacob Jansen, and Kenji Tsuda. Measurement of 002 structure factors for GaAs using parallel and convergent beam electron diffraction. In Meeting of the Arbeitskreises Hochauflösende Elektronenmikroskopie der Deutschen Gesellschaft für Elektronenmikroskopie, Bremen [Vortrag (Talk)], 2008.



60. A. Pretorius, T. Aschenbrenner, H. Dartsch, S. Figge, D. Hommel, and A. Rosenauer. Transmission electron microscopical investigation of AlGaN/GaN distributed Bragg reflectors. In IWN 2008, 6-10 Oktober, Montreaux, Schweiz Physica Status Solidi C 6, S680-S683, 2008.



61. A. Pretorius, A. Rosenauer, T. Aschenbrenner, H. Dartsch, S. Figge, and D. Hommel. TEM analyses of microstructure and composition of Al(x)Ga(1-x)N/GaN distributed Bragg reflectors. In S. Richter, A. Schwedt (Eds.): EMC 2008, Vol. 2: Materials Science, pp. 81-82, DOI: 10.1007/978-3-540-85226-1_41, 2008.



62. R. Kroeger, T. Paskova, A. Rosenauer, D. Hommel, B. Monemar, P. Fini, B. Haskell, J. Speck, and S. Nakamura. On the mechanism of dislocation and stacking fault formation in a-plane GaN films grown by hydride vapor phase epitaxy. In Physics of Semiconductors, 28th International Conference. Vienna, Austria. 24-28 July 2006. AIP-Conference-Proceedings. 2007; 893: 341-2, 2007.



63. R. Kröger, T. Paskova, D. Hommel, A. Rosenauer, P. Fini, B. Haskell, J. Speck, S. Nakamura, and B. Monemar. Defects in a-plane GaN films on r-plane sapphire. In Springer Proceedings in Physics: MSM(2007), 2007.



64. M. Schowalter, A. Rosenauer, J. Titantah, and D. Lamoen. Calculation of Debye-Waller temperature factors for GaAs. In Springer Proceedings in Physics: MSM(2007), 2007.



65. A. Pretorius, M. Schowalter, N. Daneu, R. Kröger, A. Recnik, and A. Rosenauer. Structural analysis of pyramidal defects in Mg-doped GaN. In ICNS-6, August / September 2005, Bremen Phys. stat. sol c, 3 (2006), 1803, 2006.



66. T. Yamaguchi, S. Einfeldt, S. Gangopadhyay, A. Pretorius, A. Rosenauer, J. Falta, and D. Hommel. Two to three dimensional transitions of InGaN and the impact of GaN overgrowth. In ICNS 6, August / September 2005, Bremen Phys. stat. sol c, 3 (2006), 1396-1399, 2006.



67. A. Pretorius, T. Yamaguchi, R. Kroeger, C. Kuebel, D. Hommel, and A. Rosenauer. Investigation of In(x)Ga(1-x)N islands with electron microscopy. In Springer Proceedings in Physics 107, 17 (2005), ISBN: 3.540-31914-X, 2005.



68. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron diffraction in strained In(x)Ga(1-x)As. In Springer Proceedings in Physics 107, 151 (2005), ISBN: 3.540-31914-X, 2005.



69. D. Litvinov, D. Gerthsen, A. Rosenauer, P. Gilet, and L. Grenouillet. Measurement of the nigrogen-concentration profile in GaInN/GaAs heterostructures by quantitative high-resolution transmission electron microscopy Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 127-128. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 127-128, 2004.



70. E. Piscopiello, A. Rosenauer, A. Passaseo, and G. Van Tendeloo. Segregation in InGaAs/GaAs quantum wells grown by MOCVD Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 123-124. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 123-124, 2004.



71. A. Rosenauer and D. Gerthsen. Optimum imaging conditions for strain state analysis of InGaN/GaN heterostructures. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 103-104, 2004.



72. M. Schowalter, A. Rosenauer, D. Lamoen, and D. Gerthsen. Strain state analysis of InGAAs/GaAs heterostructures: Elastic relaxation in cross section and cleaved specimen,. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 129-130, 2004.



73. T. Torunski, K. Volz, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Quantification of N distribution in Ga(Nas)/GaAs multi-quantum well structures. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 2, 441-442, 2004.



74. A. Rosenauer, M. Melzer, M. Schowalter, D. Gerthsen, E. Piscopiello, A. Passaseo, R. Cingolani, R. Reithmaier, J. P. amd Krebs, A. Forchel, and G. Van Tendeloo. Segregation in InGaAs/GaAs Quantum Wells: MOCVD versus MBE. In Microscopy Conference MC2003, International Forum for Advanced Microscopy, September 7-12, 2003, Dresden, Germany Micrsocopy and Microanalysis 9 (2003) 230-1, 2003.



75. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative investigation of Sb distribution in GaSb/GaAs heterostructures,. In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003), 2003.



76. M. Schowalter, A. Rosenauer, D. Gerthsen, R. Sellin, and D. Bimberg. Structure factors for the composition determination of InGaAs/GaAs quantum wells with the 002 beam: Isolated atom approximation versus density function theory. In Microscopy Conference MC2003, International Forum for Advanced Microscopy, September 7-12, 2003, Dresden, Germany Microscopy and Microanalysis 9 (2003), 234-5, 2003.



77. M. Efremov, V. Volodin, V.A. Sachkov, V. Preobrazhenskii, B. Semyagin, N. Ledentsov, V. Ustinov, I. Soshnikov, D. Litvinov, A. Rosenauer, and D. Gerthsen. RAMAN study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces. In Microelectron. J. 33, 535-40, 2002.



78. E. Hahn, Andreas Rosenauer, Dagmar Gerthsen, J. Off, and F. Scholz. In-Verteilung beim MOVPE-Wachstum von GaInN-Quantenfilmen. In DPG Frühjahrstagung, Regensburg (Germany) Verhandl. DPG (VI) 37,1, 195, 2002.



79. V. Potin, E. Hahn, M. Schowalter, A. Rosenauer, D. Gerthsen, B. Kuhn, and F. Scholz. Quantitative analysis of the In-distribution in InGaN/GaN-heterostructures. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, 2002.



80. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in InGaAs/GaAs quantum dot structrues. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 59, 2002.



81. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Influence of growth interruptions on the composition of GaSb/GaAs quantum wells. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 53, 2002.



82. V. Potin, E. Hahn, A. Rosenauer, and D. Gerthsen. Determination of indium composition fluctuation in InGaN/GaN quantum wells by quantitative high resolution electron microscopy. In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Inst. Phys. Conf. Ser. 169, 25-28 Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.



83. A. Rosenauer, D. Van Dyck, D. Gerthsen, M. Arzberger, G. Böhm, and G. Abstreiter. Structural and chemical investigation of InAs/GaAs nanostructures by transmission electron microscopy,. In International Conference on Semiconductor Quantum Dots (QD 2000). - 31 July-3 Aug. 2000 Phys. Status Solidi B 224, 213-16, 2001.



84. S. Schaefer, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Bartels, and D. Schikora. HRTEM-Untersuchung von CdZnSe/GaAs(100) Inselstrukturen. In DPG Frühjahrstagung, Hamburg (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 2001, Hamburg, Verhandl. DPG (VI) 36, 1/(2001), 180, 2001.



85. M. Schowalter, B. Neubauer, A. Rosenauer, D. Gerthsen, O. Schön, and M. Heuken. MOCVD growth of Ga(Al)N/InGaN/Ga(Al)N-Heterostructures: Influence of the Buffer Layer Al-Concentration an d Growth Duration on the In-Incorporation in InGaN. In MRS spring meeting 2001, San Francisco, 2001.



86. N. N. Ledentsov, I. L. Krestnikov, M. Strassburg, R. Engelhardt, S. Rodt, R. Heitz, U.W. Pohl, A Hoffmann, D. Bimberg, A. V. Sakharov, V. Lundin, A. S. Usikov, Z. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Quantum dots formed by ultrathin insertions in wide-gap matrices,. In Third International Workshop on Molecular Beam Epitaxy- Growth Physics and Technology (MBE-GPT). - 23-28 May 1999. Thin Solid Films 367, 40-7, 2000.



87. E. Schomburg, S. Brandl, S. Winnerl, K.F. Renk, N. N. Ledentsov, V. Ustinov, A. Zhukov, P.S. Kopev, H.W. Hubers, J. Schubert, H.P. Roser, A. Rosenauer, D. Litvinov, D. Gerthsen, and J.M. Chamberlain. Miniband transport in a GaAs/AlAs superlattice with submonolayer barriers in a static and THz electric field,. In Ninth International Conference on Modulated Semiconductor Structures. MSS9 / Japan Soc. Appl. Phys. Physica E 7, 814-18, 2000.



88. M. Strassburg, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Kudryashov, K.. Lischka, and D. Schikora. Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanov mode,. In Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000). - 5-10 March 2000 Phys. Status Solidi A 180, 281-5, 2000.



89. B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, M. Stutzmann, M. Albrecht, and H.P. Strunk. Analysis of composition fluctuations in Al(x)Ga(1-x)N. In E-MRS 1998 Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials. - 16-19 June 1998 Mater. Sci. Eng. B 59, 182-5, 1999.



90. W. Oberst, A. Rosenauer, D. Gerthsen, and A. Förster. Quantitative transmissionselektronenmikroskopische Untersuchung von InGaAs/GaAs-Quantenpunktstrukturen. In DPG Frühjahrstagung, Münster (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1999, Münster, Verhandl. DPG (VI) 34, 1999, 768, 1999.



91. A. Rosenauer, W. Oberst, D. Gerthsen, and A. Förster. Atomic scale analysis of the indium distribution in InGaAs/GaAs(001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions,. In MRS Fall Meeting 1998, Symposium: Growth Instabilities and Decompostion DuringHeteroepitaxy. Thin Solid Films 357, 18-21, 1999.



92. M. Strassburg, I. L. Krestnikov, A. Göldner, V. Kutzer, A. Hoffmann, N. N. Ledentsov, Z. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Excitonic gain in CdSe/ZnSe quantum dot structures. In Proceedings ICPS24, Jerusalem, August 2-7, 1998, D. Gershoni, Ed. (World Scientific), 1999.



93. U. Fischer, A. Rosenauer, T. Remmele, D. Gerthsen, and A. Förster. HRTEM-Untersuchung von InGaAs/GaAs(001) - Inselstrukturen. In DPG Frühjahrstagung, Regensburg (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1998, Regensburg, Verhandl. DPG (VI) 33, 1998, 728, 1998.



94. A. Rosenauer, D. Gerthsen, and A. Förster. Composition evaluation of In(x)Ga(1-x)As island structures by lattice fringe analysis and strain state analysis,. In Electron Microscopy 1998, paper presented at ICEM14, Cancun, Mexico, 31 August to 4 Septermber 1998, Symposium S, Volume I , 613-14, 1998.



95. A. Wurl, A. Rosenauer, D. Gerthsen, B. Hahn, and W. Gebhardt. Frühstadien des Wachstums von ZnTe Epitaxieschichten auf (100)- und (111)-GaAs Substraten. In DPG Frühjahrstagung, Regensburg (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1998, Regensburg, Verhandl. DPG (VI) 33, 1998, 682, 1998.



96. W. Gebhardt, T. Reisinger, B. Hahn, and A. Rosenauer. Growth of Large Gap II-VI Semiconductors by MBE and MOVPE: A Comparative Study,. In International Conference on Semiconductor Heteroepitaxy, Monpellier, France, July 4th to 7th, World Scientific, 1995, 51-58, 1995.



97. T. Reisinger, A. Rosenauer, F. Franzen, and W. Gebhardt. In-Situ Growth Control of ZnSe/GaAs and ZnCdSe Quantum Wells,. In International Conference on Semiconductor Heteroepitaxy, Monpellier, France, July 4th to 7th, World Scientific, 1995, 118-121, 1995.



98. A. Rosenauer, G. Schütz, T. Reisinger, H. Preis, F. Franzen, and W. Gebhardt. TEM Investigation of Plastic Relaxation in ZnSe/GaAs(001), International Conference on Semiconductor Heteroepitaxy, Monpellier, France, July 4th to 7th,. In World Scientific, 1995, 114-117, 1995.



99. G. Schütz, Rose., T. Reisinger, and W. Gebhardt. TEM-Untersuchung der Spannungsrelaxation in MBE ZnSe/GaAs(001). In DPG Frühjahrstagung, Berlin (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1995, Berlin, Verhandl. DPG (VI) 30, 1995, 1213, 1995.



100. A. Rosenauer, H. Stanzl, K. Wolf, S. Bauer, M. Kastner, M. Grün, and W. Gebhardt. Spatial Confinement of Misfit Dislocations at the Interfaces of Epitaxial CdSe/GaAs(111) and ZnTe/GaAs(111) Studied by TEM,. In 17th International Conference on Defects in Semiconductors. Gmunden, Austria, 18-23 July 1993, Materials Science Forum vols. 143-147, 567-572, 1994.



101. H. Stanzl, A. Rosenauer, K. Wolf, M. Kastner, B. Hahn, and W. Gebhardt. MOVPE Growth of ZnSeTe on (111) and (001) GaAs Substrates,. In SPIE 2140 Epitaxial Growth Processes, Los Angeles (USA), 138-147, 1994.



102. M. Müller, S. Metzner, T. Hempel, P. Veit, F. Bertram, F F Krause, T Mehrtens, K. Müller-Caspary, A Rosenauer, T. Schimpke, A. Avramescu, M. Strassburg, and J. Christen. Optical, structural and compositional nano-scale characterization of InGaN/GaN core-shell microrod heterostructures (Talk). In Society of Photo-Optical Instrumentation Engineers Photonics West 2016 (SPIE Photonics West 2016) , San Francisco (USA), .

1. Patrick Karasch. Messung von Verspannungen und piezoelektrischen Feldern in InGaN/GaN Quantentrögen mittels Elektronenbeugung (Measurement of strain and piezoelectric fields in InGaN/GaN quantum wells by electron diffraction), August 2012.



2. Dennis Zillmann. Bestimmung der Modulationstransferfunktion einer CCD-Kamera und Kontrasttransfer in der Transmissionselektronenmikroskopie (Determination of the modulation transfer function of a CCD camera and contrast transfer in the field of transmission electron microscopy). Master's thesis, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany, October 2011.



3. Thorsten Mehrtens. Bestimmung von Segregationsprofilen in InGaAs/GaAs-Quantentrögen mittels konventioneller und Rastertransmissionselektronenmikroskopie. Master's thesis, Universität Bremen, 2009.



4. Claas Gloistein. Messung von Debye-Waller-Faktoren für Galliumarsenid mittels Elektronenbeugung (Measurement of Debye-Waller-factors for gallium arsenide by electron diffraction), May 2009.



5. Knut Müller. Measurement of 002 structure factors for GaAs using parallel and convergent beam electron diffraction [Talk], April 2008.



6. Knut Müller. Bestimmung von Strukturfaktoren für Galliumarsenid mittels Elektronenbeugung - Entwicklung und Test einer Messmethode (Determination of structure factors for gallium arsenide by electron diffraction - development and test of a measurement method). Diplomarbeit, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany, September 2007.

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