1. Dominik Heinz, Mohamed Fikry, Timo Aschenbrenner, Marco Schowalter, Tobias Meisch, Manfred Madel, Florian Huber, Matthias Hocker, Manuel Frey, Ingo Tischer, Benjamin Neuschl, Thorsten Mehrtens, Knut Müller, Andreas Rosenauer, Detlef Hommel, Klaus Thonke, and Ferdinand Scholz. GaN tubes with coaxial non- and semipolar GaInN quantum wells. Phys. Status Solidi (c), 11:648-651, 2014.



2. L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, M. Schowalter, T. Mehrtens, A Rosenauer, and A. Hangleiter. Atomics scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content. Applied Physics Letters, 102:102110, 2013. [doi:10.1063/1.4795623]



3. U. Rossow, A. Kruse, H. Jönen, L. Hoffmann, F. Ketzer, T. Langer, R. Buss, H. Bremers, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer. Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region. Journal of Crystal Growth, 370(0):105-108, 2013. ISSN: 0022-0248. [WWW] Keyword(s): A3. Low press. metalorganic vapor phase epitaxy, A3. Quantum wells, A3. Laser epitaxy, B1. Nitrides, B2. Semiconducting III-V materials.



4. K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells. J. Appl. Phys., 102(8):083504, 2007. [WWW] [doi:10.1063/1.2794739] Keyword(s): annealing, gallium arsenide, gallium compounds, III-V semiconductors, impurity distribution, indium compounds, photoluminescence, Rutherford backscattering, semiconductor epitaxial layers, semiconductor heterojunctions, semiconductor quantum wells, transmission electron microscopy.



5. E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, V. Perez-Solorzano, M. Jetter, and F. Scholz. In-Redistribution in a GaInN Quantum Well upon Thermal Annealing. physica status solidi (b), 234(3):738-741, 2002. ISSN: 1521-3951. [doi:10.1002/1521-3951(200212)234:3<738::AID-PSSB738>3.0.CO;2-X] Keyword(s): 64.75.+g, 66.30.Xj, 68.37.Lp, 78.55.Cr, 81.05.Ea.



6. A. Rosenauer and D. Gerthsen. Composition evaluation by the lattice fringe analysis method using defocus series. Ultramicroscopy, 76(1):49-60, 1999.



7. M. Strassburg, R. Heitz, V. Türck, S. Rodt, U.W. Pohl, A. Hoffmann, D. Bimberg, I.L. Krestnikov, V.A. Shchukin, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices. Journal of Electronic Materials, 28(5):506-514, 1999. ISSN: 0361-5235. [doi:10.1007/s11664-999-0103-1] Keyword(s): CdSe/(Zn, Mg)(S, Se), excitonic localization, gain, resonant waveguiding.



8. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Förster. Composition evaluation by lattice fringe analysis. Ultramicroscopy, 72:121-133, 1998. [doi:10.1016/S0304-3991(98)00002-3]



9. M. Strassburg, V. Kutzer, U. W. Pohl, A. Hoffmann, I. Broser, N. N. Ledentsov, D. Bimberg, A. Rosenauer, U. Fischer, D. Gerthsen, I. L. Krestnikov, M. V. Maximov, P. S. Kop'ev, and Zh.I. Alferov. Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix. Applied Physics Letters, 72(8):942-944, 1998. [WWW] [doi:10.1063/1.120880] Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor quantum dots, island structure, monolayers, refractive index, transmission electron microscopy, biexcitons, excitons, phonon spectra, quantum well lasers, stimulated emission.

1. Florian Fritz Krause, Andreas Rosenauer, Knut Müller-Caspary, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. In Frontiers of Electron Microscopy in Materials Science (FEMMS) 2015, Lake Tahoe (CA/USA), [Invited Talk], September 13-18th 2015.



2. Andreas Rosenauer, Florian F. Krause, Knut Müller, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. In Materials Research Society Spring Meeting 2015 (MRS 2015), San Francisco (USA) [Talk], volume Symposium ZZ, Talk 2.02, 2015.



3. Josef Zweck, Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Peter Schattschneider, and Andreas Rosenauer. Exploring the space between atoms: Interatomic electric fields imaged by STEM-DPC. In Multinational Congress on Microscopy (MCM) 2015, Eger (Hungary) [Invited talk], 2015.



4. Lars Hoffmann, Heiko Bremers, Holger Jönen, Uwe Rossow, Thorsten Mehrtens, Marco Schowalter, Andreas Rosenauer, and Andreas Hangleiter. STEM and XRD investigations of ultra thin GaInN/GaN quantum wells with high indium content. In Verhandlungen der DPG, number HL 64.6, pages 240, 2012.



5. L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, T. Mehrtens, M. Schowalter, A. Rosenauer, and A. Hangleiter. STEM and XRD investigations of ultra-thin GaInN/GaN quantum wells with high indium content. In International Workshop on Nitride Semiconductors 2012 [Talk], 2012.



6. L. Hoffmann, H. Bremer, H. Jönen, U. Rossow, J. Thalmair, J. Zweck, M. Schowalter, A. Rosenauer, and A. Hangleiter. Strain Relaxation Mechanisms in Green Emitting GaInN/GaN Laser Diode Structures. In ICNS 9 Glasgow, U.K., 2011 [talk] talk B4.3, 2011.



7. Lars Hoffmann, Heiko Bremers, Holger Joenen, Uwe Rossow, Johannes Thalmair, Josef Zweck, Marco Schowalter, Andreas Rosenauer, and Andreas Hangleiter. Strain Relaxation Mechanisms in Green Emitting GaInN/GaN Laser Diode Structures. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.



8. J. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Ab initio based atomic scattering amplitudes and 002 electron structure factor of GaInAs/GaAs quantum wells. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012040, 2010.



9. John T. Titantah, Dirk Lamoen, Marco Schowalter, Andreas Rosenauer, and Knut Müller. Ab initio based atomic scattering amplitudes and 002 electron structure factor of GaInAsN / GaAs quantum wells. In 32nd International Symposium on Dynamical Properties of Solids, Antwerp (Belgium) [Poster presentation], September 2009.



10. D. Litvinov, D. Gerthsen, A. Rosenauer, P. Gilet, and L. Grenouillet. Measurement of the nigrogen-concentration profile in GaInN/GaAs heterostructures by quantitative high-resolution transmission electron microscopy Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 127-128. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 127-128, 2004.



11. E. Hahn, Andreas Rosenauer, Dagmar Gerthsen, J. Off, and F. Scholz. In-Verteilung beim MOVPE-Wachstum von GaInN-Quantenfilmen. In DPG Frühjahrstagung, Regensburg (Germany) Verhandl. DPG (VI) 37,1, 195, 2002.



12. M. Strassburg, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Kudryashov, K.. Lischka, and D. Schikora. Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanov mode,. In Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000). - 5-10 March 2000 Phys. Status Solidi A 180, 281-5, 2000.



13. M. Strassburg, I. L. Krestnikov, A. Göldner, V. Kutzer, A. Hoffmann, N. N. Ledentsov, Z. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Excitonic gain in CdSe/ZnSe quantum dot structures. In Proceedings ICPS24, Jerusalem, August 2-7, 1998, D. Gershoni, Ed. (World Scientific), 1999.

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