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Publications about 'GaSb'
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Articles in journal, book chapters
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R. Otto,
H. Kirmse,
I. Häusler,
W. Neumann,
A. Rosenauer,
D. Bimberg,
and L. Muller-Kirsch.
Determination of composition and strain field of a III/V quaternary quantum dot system.
Applied Physics Letters,
85(21):4908-4910,
2004.
ISSN: 0003-6951.
[doi:10.1063/1.1823602]
Keyword(s): III-V semiconductors,
gallium arsenide,
indium compounds,
internal stresses,
nucleation,
semiconductor quantum dots,
transmission electron microscopy,
6835Gy,
6837Lp,
6865Hb.
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M. Schowalter,
A. Rosenauer,
D. Gerthsen,
M. Grau,
and M.-C. Amann.
Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy.
Appl. Phys. Lett.,
83(15):3123-3125,
October 2003.
Keyword(s): growth,
GaSb,
Ga,
Sb,
GaAs,
Ga,
As,
quantum wells,
quantum well,.
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W.S. Kuhn,
A. Lusson,
B. Qu'Hen,
C. Grattepain,
H. Dumont,
O. Gorochov,
S. Bauer,
K. Wolf,
M. Wörz,
T. Reisinger,
A. Rosenauer,
H.P. Wagner,
H. Stanzl,
and W. Gebhardt.
The metal organic vapour phase epitaxy of ZnTe: III. Correlation of growth and layer properties.
Progress in Crystal Growth and Characterization of Materials,
31(1-2):119-177,
1995.
ISSN: 0960-8974.
[WWW]
[doi:10.1016/0960-8974(95)00018-6]
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M. Schowalter,
A. Rosenauer,
D. Gerthsen,
M. Grau,
and M.-C. Amann.
Quantitative investigation of Sb distribution in GaSb/GaAs heterostructures,.
In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003),
2003.
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M. Schowalter,
A. Rosenauer,
D. Gerthsen,
M. Grau,
and M.-C. Amann.
Influence of growth interruptions on the composition of GaSb/GaAs quantum wells.
In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 53,
2002.
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