1. Andrea Kirsch, M. Mangir Murshed, Marco Schowalter, Andreas Rosenauer, and Thorsten M. Gesing. Nanoparticle Precursor into Polycrystalline Bi2Fe4O9: An Evolutionary Investigation of Structural, Morphological, Optical, and Vibrational Properties. The Journal of Physical Chemistry C, 120(33):18831-18840, 2016. [doi:10.1021/acs.jpcc.6b04773]



2. Marc Sauerbrey, Jan Höcker, Meikel Wellbrock, Marco Schowalter, Jon-Olaf Krisponeit, Knut Müller-Caspary, Andreas Rosenauer, Gang Wei, Lucio Colombi Ciacchi, Jens Falta, and Jan Ingo Flege. Ultrasmooth Ru(0001) Films as Templates for Ceria Nanoarchitectures. Crystal Growth & Design, 16(8):4216-4224, 2016. [doi:10.1021/acs.cgd.6b00192]



3. Suman Pokhrel, Johannes Birkenstock, Arezoo Dianat, Janina Zimmermann, Marco Schowalter, Andreas Rosenauer, Lucio Colombi Ciacchi, and L. Madler. In situ high temperature X-ray diffraction, transmission electron microscopy and theoretical modeling for the formation of WO3 crystallites. CrystEngComm, 17:6985-6998, 2015. [doi:10.1039/C5CE00526D]



4. U. Rossow, L. Hoffmann, H. Bremers, E.R. Buss, F. Ketzer, T. Langer, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer. Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells. Journal of Crystal Growth, 414(0):49-55, 2015. Note: Proceedings of the Seventeenth International Conference on Metalorganic Vapor Phase Epitaxy. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2014.11.040] Keyword(s): A1. Surface processes.



5. Dominik Heinz, Mohamed Fikry, Timo Aschenbrenner, Marco Schowalter, Tobias Meisch, Manfred Madel, Florian Huber, Matthias Hocker, Manuel Frey, Ingo Tischer, Benjamin Neuschl, Thorsten Mehrtens, Knut Müller, Andreas Rosenauer, Detlef Hommel, Klaus Thonke, and Ferdinand Scholz. GaN tubes with coaxial non- and semipolar GaInN quantum wells. Phys. Status Solidi (c), 11:648-651, 2014.



6. H. Kauko, B. O. Fimland, T. Grieb, A. M. Munshi, K. Müller, A. Rosenauer, and A. T. J. van Helvoort. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires. Journal of Applied Physics, 116(14):144303, 2014. [doi:10.1063/1.4896904]



7. H. Kauko, T. Grieb, A. M. Munshi, K. Mller, A. Rosenauer, B. O. Fimland, and A. T. J. van Helvoort. The Outward Diffusion of Sb during Nanowire Growth Studied by Quantitative High-Angle Annular Dark Field Scanning Transmission Electron Microscopy. Microscopy and Microanalysis, 20:186-187, 8 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614002657]



8. A. Rath, J. K. Dash, R. R. Juluri, A. Ghosh, T. Grieb, M. Schowalter, F. F. Krause, K. Müller, A. Rosenauer, and P. V. Satyam. A study of the initial stages of the growth of Au-assisted epitaxial Ge nanowires on a clean Ge(100) surface. CrystEngComm, 16:2486-2490, 2014. [doi:10.1039/C3CE42254B]



9. Ahin Roy, Subhajit Kundu, Knut Müller, Andreas Rosenauer, Saransh Singh, Prita Pant, M. P. Gururajan, Praveen Kumar, J. Weissmüller, Abhishek Kumar Singh, and N. Ravishankar. Wrinkling of Atomic Planes in Ultrathin Au Nanowires. Nano Letters, 14(8):4859-4866, 2014. [doi:10.1021/nl502259w]



10. Duggi V. Sridhara Rao, Ramachandran Sankarasubramanian, Kuttanellore Muraleedharan, Thorsten Mehrtens, Andreas Rosenauer, and Dipankar Banerjee. Quantitative Strain and Compositional Studies of InGaAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques. Microscopy and Microanalysis, 20:1262-1270, 8 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614000762]



11. L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, M. Schowalter, T. Mehrtens, A Rosenauer, and A. Hangleiter. Atomics scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content. Applied Physics Letters, 102:102110, 2013. [doi:10.1063/1.4795623]



12. H. Kauko, T. Grieb, R. Bjørge, M. Schowalter, A.M. Munshi, H. Weman, A. Rosenauer, and A.T.J. van Helvoort. Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM. Micron, 44(0):254-260, 2013. ISSN: 0968-4328. [WWW] [doi:10.1016/j.micron.2012.07.002] Keyword(s): HAADF-STEM.



13. K Müller, H Ryll, I Ordavo, M Schowalter, J Zweck, H Soltau, S Ihle, L Strüder, K Volz, P Potapov, and A Rosenauer. STEM strain analysis at sub-nanometre scale using millisecond frames from a direct electron read-out CCD camera. Journal of Physics: Conference Series, 471(1):012024, 2013. [WWW]



14. U. Rossow, A. Kruse, H. Jönen, L. Hoffmann, F. Ketzer, T. Langer, R. Buss, H. Bremers, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer. Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region. Journal of Crystal Growth, 370(0):105-108, 2013. ISSN: 0022-0248. [WWW] Keyword(s): A3. Low press. metalorganic vapor phase epitaxy, A3. Quantum wells, A3. Laser epitaxy, B1. Nitrides, B2. Semiconducting III-V materials.



15. M Tewes, F F Krause, K Müller, P Potapov, M Schowalter, T Mehrtens, and A Rosenauer. Quantitative Composition Evaluation from HAADF-STEM in GeSi/Si Heterostructures. Journal of Physics: Conference Series, 471(1):012011, 2013. [WWW]



16. Katharina I. Gries, Fabian Heinemann, Andreas Rosenauer, and Monika F. In vitro growth of flat aragonite crystals between the layers of the insoluble organic matrix of the abalone Haliotis laevigata. Journal of Crystal Growth, 358(0):75-80, 2012. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2012.08.005] Keyword(s): A1. Biocrystallization.



17. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy. Microscopy and Microanalysis, 18(05):995-1009, 2012. [doi:10.1017/S1431927612001274]



18. A. Rath, J. K. Dash, R. R. Juluri, A. Rosenauer, Marcos Schoewalter, and P. V. Satyam. Growth of oriented Au nanostructures: Role of oxide at the interface. Journal of Applied Physics, 111(6):064322, 2012. [WWW] [doi:10.1063/1.3698505] Keyword(s): annealing, electron energy loss spectra, elemental semiconductors, field emission electron microscopy, gold, metallic thin films, molecular beam epitaxial growth, nanofabrication, nanoparticles, scanning electron microscopy, silicon, silicon compounds, transmission electron microscopy, vacuum deposition.



19. T. Aschenbrenner, G. Kunert, W. Freund, C. Kruse, S. Figge, M. Schowalter, C. Vogt, J. Kalden, K. Sebald, A. Rosenauer, J. Gutowski, and D. Hommel. Catalyst free self-organized grown high-quality GaN nanorods. physica status solidi (b), 248(8):1787-1799, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147148] Keyword(s): MBE, MOVPE, nanorods, nitrides, TEM, III-V semiconductors.



20. J. K. Dash, A. Rath, R. R. Juluri, P. Santhana Raman, K. Müller, A. Rosenauer, and P. V. Satyam. DC heating induced shape transformation of Ge structures on ultra clean Si (5 5 12) surfaces. Journal of Physics: Condensed matter, 23:135002, 2011.



21. J. K. Dash, A. Rath, R. R. Juluri, P. Santhana Raman, K. Müller, M. Schowalter, R. Imlau, A. Rosenauer, and P. V. Satyam. Shape transformation of SiGe structures on ultra clean Si(5 5 7) and Si(5 5 12) surfaces. Journal of Physics: Conference Series, 326(1):012021, 2011. [WWW]



22. J. Falta, Th. Schmidt, S. Gangopadhyay, Chr. Schulz, S. Kuhr, N. Berner, J. I. Flege, A. Pretorius, A. Rosenauer, K. Sebald, H. Lohmeyer, J. Gutowski, S. Figge, T. Yamaguchi, and D. Hommel. Cleaning and growth morphology of GaN and InGaN surfaces. physica status solidi (b), 248(8):1800-1809, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201046574] Keyword(s): chemical analysis, scanning tunneling microscopy, quantum dots, X-ray photoemission spectroscopy.



23. Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Gerd Kunert, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. A structural investigation of highly ordered catalyst- and mask-free GaN nanorods. Nanotechnology, 22(2):025603, 2011. [WWW]



24. M. Florian, F. Jahnke, A. Pretorius, A. Rosenauer, H. Dartsch, C. Kruse, and D. Hommel. Influence of growth imperfections on optical properties of nitride pillar VCSEL microcavities. physica status solidi (b), 248(8):1867-1870, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147159] Keyword(s): lasers, laser diodes, microcavities, optical properties, III-V semiconductors.



25. Katharina Gries, Fabian Heinemann, Meike Gummich, Andreas Ziegler, Andreas Rosenauer, and Monika Fritz. Influence of the Insoluble and Soluble Matrix of Abalone Nacre on the Growth of Calcium Carbonate Crystals. Crystal Growth & Design, 11(3):729-734, 2011. [doi:10.1021/cg101240e]



26. Knut Müller, Marco Schowalter, Andreas Rosenauer, Dongzhi Hu, Daniel M. Schaadt, Michael Hetterich, Philippe Gilet, Oleg Rubel, Rafael Fritz, and Kerstin Volz. Atomic scale annealing effects on InGaNAs studied by TEM three-beam imaging. Physical Review B, 84(4):045316, July 2011. [doi:10.1103/PhysRevB.84.045316]



27. Angelika Pretorius, Thomas Schmidt, Timo Aschenbrenner, Tomohiro Yamaguchi, Christian Kübel, Knut Müller, Heiko Dartsch, Detlef Hommel, Jens Falta, and Andreas Rosenauer. Microstructural and compositional analyses of GaN based nanostructures. Physica Status Solidi, 248:1822-1836, 2011. [doi:10.1002/pssb.201147175]



28. C. Tessarek, S. Figge, T. Aschenbrenner, S. Bley, A. Rosenauer, M. Seyfried, J. Kalden, K. Sebald, J. Gutowski, and D. Hommel. Strong phase separation of strained InGaN layers due to spinodal and binodal decomposition: Formation of stable quantum dots. Phys. Rev. B, 83:115316, March 2011. [doi:10.1103/PhysRevB.83.115316]



29. T. Aschenbrenner, H. Dartsch, C. Kruse, M. Anastasescu, M. Stoica, M. Gartner, A. Pretorius, A. Rosenauer, Thomas Wagner, and D. Hommel. Optical and structural characterization of AlInN layers for optoelectronic applications. J. Appl. Phys., 108(6):063533, 2010. [WWW] [doi:10.1063/1.3467964] Keyword(s): aluminium compounds, annealing, distributed Bragg reflectors, extinction coefficients, III-V semiconductors, indium compounds, MOCVD coatings, refractive index, semiconductor epitaxial layers, surface morphology, surface roughness, transmission electron microscopy, vapour phase epitaxial growth, wide band gap semiconductors, X-ray diffraction.



30. Suman Pokhrel, Johannes Birkenstock, Marco Schowalter, Andreas Rosenauer, and Lutz Mädler. Growth of Ultrafine Single Crystalline WO3 Nanoparticles Using Flame Spray Pyrolysis. Crystal Growth & Design, 10(2):632-639, 2010. [doi:10.1021/cg9010423]



31. A. Schaefer, A. Sandell, L.E. Walle, V. Zielasek, M. Schowalter, A. Rosenauer, and M. Bäumer. Chemistry of thin film formation and stability during praseodymium oxide deposition on Si(111) under oxygen-deficient conditions. Surface Science, 604(15–16):1287-1293, 2010. ISSN: 0039-6028. [WWW] [doi:10.1016/j.susc.2010.04.016] Keyword(s): Praseodymium oxide.



32. Katharina Gries, Roland Kröger, Christian Kübel, Marco Schowalter, Monika Fritz, and Andreas Rosenauer. Correlation of the orientation of stacked aragonite platelets in nacre and their connection via mineral bridges. Ultramicroscopy, 109(3):230-236, 2009. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2008.10.023] Keyword(s): Nacre.



33. A. Schaefer, V. Zielasek, Th. Schmidt, A. Sandell, M. Schowalter, O. Seifarth, L. E. Walle, Ch. Schulz, J. Wollschläger, T. Schroeder, A. Rosenauer, J. Falta, and M. Bäumer. Growth of praseodymium oxide on Si(111) under oxygen-deficient conditions. Phys. Rev. B, 80:045414, July 2009. [doi:10.1103/PhysRevB.80.045414]



34. T. Aschenbrenner, S. Figge, M. Schowalter, A. Rosenauer, and D. Hommel. Photoluminescence and structural analysis of a-plane InGaN layers. Journal of Crystal Growth, 310(23):4992-4995, 2008. Note: The Fourteenth International conference on Metalorganic Vapor Phase Epitax The 14th International conference on Metalorganic Vapor Phase Epitax. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2008.08.014] Keyword(s): A1. X-ray diffraction.



35. Abdul Kadir, M.R. Gokhale, Arnab Bhattacharya, Angelika Pretorius, and Andreas Rosenauer. {MOVPE} growth and characterization of InN/GaN single and multi-quantum well structures. Journal of Crystal Growth, 311(1):95-98, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2008.10.056] Keyword(s): A1. Transmission electron microscopy.



36. D. Litvinov, M. Schowalter, A. Rosenauer, B. Daniel, J. Fallert, W. Löffler, H. Kalt, and M. Hetterich. Determination of critical thickness for defect formation of CdSe/ZnSe heterostructures by transmission electron microscopy and photoluminescence spectroscopy. physica status solidi (a), 205(12):2892-2897, 2008. ISSN: 1862-6319. [doi:10.1002/pssa.200824151] Keyword(s): 68.37.Lp, 68.37.Og, 68.55.ag, 68.65.Fg, 78.55.Et.



37. A. Pretorius, T. Yamaguchi, C. Kübel, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigation of growth and dissolution of nano-islands grown by molecular beam epitaxy. Journal of Crystal Growth, 310(4):748-756, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2007.11.203] Keyword(s): A1. High resolution transmission electron microscopy.



38. K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells. J. Appl. Phys., 102(8):083504, 2007. [WWW] [doi:10.1063/1.2794739] Keyword(s): annealing, gallium arsenide, gallium compounds, III-V semiconductors, impurity distribution, indium compounds, photoluminescence, Rutherford backscattering, semiconductor epitaxial layers, semiconductor heterojunctions, semiconductor quantum wells, transmission electron microscopy.



39. R. Kröger, C. Kruse, C. Roder, D. Hommel, and A. Rosenauer. Relaxation in crack-free AlN/GaN superlattices. physica status solidi (b), 243(7):1533-1536, 2006. ISSN: 1521-3951. [doi:10.1002/pssb.200565470] Keyword(s): 42.79.Fm, 68.37.Lp, 68.55.Ln, 68.65.Cd, 71.72.Ff, 83.85.St.



40. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in $In_{x}Ga_{1-{}x}As$. Phys. Rev. B, 74(16):165306, October 2006. [doi:10.1103/PhysRevB.74.165306]



41. E. Piscopiello, A. Rosenauer, A. Passaseo, E. H. Montoya Rossi, and G. Van Tendeloo. Segregation in In(x)Ga(1-x)As/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition. Philosophical Magazine, 85(32):3857-3870, 2005. [doi:10.1080/147830500269402]



42. D. Litvinov, M. Schowalter, A. Rosenauer, D. Gerthsen, T. Passow, H. Heinke, and D. Hommel. Influence of the cap layer growth temperature on the Cd distribution in CdSe/ZnSe heterostructures. Journal of Crystal Growth, 263(1-4):348-352, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.11.073] Keyword(s): A1. Desorption.



43. V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano, and N. Grandjean. Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy. Journal of Crystal Growth, 262(1-4):145-150, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.10.082] Keyword(s): A1. Metalorganic vapor phase epitaxy.



44. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668-1683, 2003. ISSN: 1610-1642. [doi:10.1002/pssc.200303129] Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.



45. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 83(15):3123-3125, October 2003. Keyword(s): growth, GaSb, Ga, Sb, GaAs, Ga, As, quantum wells, quantum well,.



46. D. Litvinov, A. Rosenauer, D. Gerthsen, P. Kratzert, M. Rabe, and F. Henneberger. Influence of the growth procedure on the Cd distribution in CdSe/ZnSe heterostructures: Stranski--Krastanov versus two-dimensional islands. Applied Physics Letters, 81(4):640-642, 2002. [WWW] [doi:10.1063/1.1496133] Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor heterojunctions, molecular beam epitaxial growth, semiconductor growth, island structure, interface structure, atomic force microscopy, transmission electron microscopy, chemical interdiffusion.



47. D. Litvinov, A. Rosenauer, D. Gerthsen, and H. Preis. Electron microscopy investigation of the defect configuration in CdSe/ZnSe quantum dot structures. Philosophical Magazine A, 82(7):1361-1380, 2002. [doi:10.1080/01418610208235677]



48. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546-6552, 2002. ISSN: 0021-8979. [doi:10.1063/1.1516248] Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.



49. D. Gerthsen, B. Neubauer, A. Rosenauer, T. Stephan, H. Kalt, O. Schon, and M. Heuken. InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition. Applied Physics Letters, 79(16):2552-2554, 2001. ISSN: 0003-6951. [doi:10.1063/1.1409949] Keyword(s): III-V semiconductors, MOCVD, gallium compounds, indium compounds, lattice constants, photoluminescence, red shift, semiconductor growth, semiconductor quantum wells, spectral line intensity, transmission electron microscopy, wide band gap semiconductors, 6865Fg, 7855Cr, 7867De, 8107St, 8115Gh.



50. E. Kurtz, M. Schmidt, M. Baldauf, S. Wachter, M. Grün, H. Kalt, C. Klingshirn, D. Litvinov, A. Rosenauer, and D. Gerthsen. Suppression of lateral fluctuations in CdSe-based quantum wells. Applied Physics Letters, 79(8):1118-1120, 2001. [WWW] [doi:10.1063/1.1394172] Keyword(s): cadmium compounds, II-VI semiconductors, semiconductor quantum wells, fluctuations, photoluminescence, semiconductor growth, spectral line breadth, molecular beam epitaxial growth.



51. N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Soshnikov, V. Shchukin, V. Ustinov, A. Egorov, A. Zukov, V. Volodin, M. Efremov, V. Preobrazhenskii, B. Semyagin, D. Bimberg, and Zh. Alferov. Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces. Journal of Electronic Materials, 30:463-470, 2001. ISSN: 0361-5235. [doi:10.1007/s11664-001-0084-1] Keyword(s): Chemie und Materialwissenschaften.



52. D. Litvinov, A. Rosenauer, D. Gerthsen, H. Preis, K. Fuchs, and S. Bauer. Growth and vertical correlation of CdSe/ZnSe quantum dots. Journal of Applied Physics, 89(7):3695-3699, 2001. ISSN: 0021-8979. [doi:10.1063/1.1352676] Keyword(s): II-VI semiconductors, cadmium compounds, island structure, molecular beam epitaxial growth, reflection high energy electron diffraction, semiconductor epitaxial layers, semiconductor growth, semiconductor quantum dots, transmission electron microscopy, zinc compounds, 6865Hb, 8105Dz, 8107Ta, 8115Hi.



53. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in In(x)Ga(1-x)As/GaAs$ Stranski-Krastanow layers}. Phys. Rev. B, 64(24):245334, December 2001. [doi:10.1103/PhysRevB.64.245334]



54. A. Rosenauer, W. Oberst, D. Litvinov, D. Gerthsen, A. Förster, and R. Schmidt. Structural and chemical investigation of $In_{0.6}Ga_{0.4}As$ Stranski-Krastanow layers buried in GaAs by transmission electron microscopy. Phys. Rev. B, 61(12):8276-8288, March 2000. [doi:10.1103/PhysRevB.61.8276]



55. D. Schikora, S. Schwedhelm, D. J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg. Investigations on the Stranski--Krastanow growth of CdSe quantum dots. Applied Physics Letters, 76(4):418-420, 2000. [WWW] [doi:10.1063/1.125773] Keyword(s): semiconductor quantum dots, molecular beam epitaxial growth, self-assembly, island structure, stacking faults, cadmium compounds, II-VI semiconductors, reflection high energy electron diffraction, photoluminescence, monolayers.



56. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Forster. Composition evaluation of In(x)Ga(1-x)As Stranski-Krastanow-island structures by strain state analysis. Applied Physics Letters, 71(26):3868-3870, 1997. [WWW] [doi:10.1063/1.120528] Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, island structure, transmission electron microscopy, lattice constants, molecular beam epitaxial growth, semiconductor epitaxial layers, finite element analysis, segregation, semiconductor growth.



57. U. Woggon, W. Langbein, J. M. Hvam, A. Rosenauer, T. Remmele, and D. Gerthsen. Electron microscopic and optical investigations of the indium distribution in GaAs capped In(x)Ga(1-x)As islands. Applied Physics Letters, 71(3):377-379, 1997. [WWW] [doi:10.1063/1.119542] Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, buried layers, transmission electron microscopy, photoluminescence, molecular beam epitaxial growth, semiconductor growth, semiconductor epitaxial layers.



58. Marcus J. Kastner, Berthold Hahn, Claus Auchter, Markus Deufel, Andreas Rosenauer, and Wolfgang Gebhardt. Structural characterization and MOVPE growth of ZnCdSe and ZnSSe layers, quantum wells and superlattices. Journal of Crystal Growth, 159(1-4):134-137, 1996. Note: Proceedings of the seventh international conference on II-VI compouds and devices. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(95)00761-X]



59. W.S. Kuhn, A. Lusson, B. Qu'Hen, C. Grattepain, H. Dumont, O. Gorochov, S. Bauer, K. Wolf, M. Wörz, T. Reisinger, A. Rosenauer, H.P. Wagner, H. Stanzl, and W. Gebhardt. The metal organic vapour phase epitaxy of ZnTe: III. Correlation of growth and layer properties. Progress in Crystal Growth and Characterization of Materials, 31(1-2):119-177, 1995. ISSN: 0960-8974. [WWW] [doi:10.1016/0960-8974(95)00018-6]



60. A. Rosenauer, T. Reisinger, E. Steinkirchner, J. Zweck, and W. Gebhardt. High resolution transmission electron microscopy determination of Cd diffusion in CdSeZnSe single quantum well structures. Journal of Crystal Growth, 152(1-2):42-50, 1995. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(95)00083-6]



61. K Wolf, S Jilka, A Rosenauer, G Schutz, H Stanzl, T Reisinger, and W Gebhardt. High-resolution X-ray diffraction investigations of epitaxially grown ZnSe/GaAs layers. Journal of Physics D: Applied Physics, 28(4A):A120, 1995. [WWW]



62. M. Grün, M. Hetterich, C. Klingshirn, A. Rosenauer, J. Zweck, and W. Gebhardt. Strain relief and growth modes in wurtzite type epitaxial layers of CdSe and CdS and in CdSe/CdS superlattices. Journal of Crystal Growth, 138(1-4):150-154, 1994. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(94)90797-8]



63. S. Bauer, A. Rosenauer, P. Link, W. Kuhn, J. Zweck, and W. Gebhardt. Misfit dislocations in epitaxial ZnTe/GaAs (001) studied by {HRTEM}. Ultramicroscopy, 51(1-4):221-227, 1993. ISSN: 0304-3991. [WWW] [doi:10.1016/0304-3991(93)90148-Q]

1. Knut Müller-Caspary, Andreas Oelsner, Pavel Potapov, and Thomas Schmidt. Analysis of strain and composition in GeSi/Si heterostructures by electron microscopy. In European Microscopy Congress 2016, Lyon (F), [Talk MS03-OP239], 2016. [doi:10.1002/EMC2016.0311]



2. U. Rossow, L. Hoffmann, H. Bremers, R. Buss, F. Ketzer, T. Langer, T. Mehrtens, M. Schowalter, A. Rosenauer, and A. Hangleiter. Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells. In ICMOVPE XVII, Lausanne (Switzerland) [Poster presenation], 2014.



3. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Measurement of composition and strain by STEM. In Microscopy and Microanalysis 2012 (M&M2012), Phoenix, Arizona, July 29-August 2 [Invited talk], volume 18, pages 1804-1805, 2012. [doi:10.1017/S1431927612010872]



4. Uwe Rossow, Andreas Kruse, Holger Jönen, Lars Hoffmann, Fedor Ketzer, Torsten Langer, Ronald Buss, Heiko Bremers, Andreas Hangleiter, Thorsten Mehrtens, Marco Schowalter, and Andreas Rosenauer. Optimizing the Growth Process of the Active Zone in GaN Based Laser Structures for the Long Wavelength Region. In ICMOVPE - XVI [Talk], 2012.



5. T. Aschenbrenner, G. Kunert, W. Freund, S. Figge, C. Kruse, M. Schowalter, C. Vogt, A. Rosenauer, J. Kalden, K. Sebald, J. Gutowski, and D Hommel. High quality GaN nanorods: from catalyst free growth to an LED. In presented at IWN 2010, 2010.



6. M. Florian, F. Jahnke, A. Pretorius, A. Rosenauer, H. Dartsch, C. Kruse, and D. Hommel. Influence of growth imperfections on optical properties of nitride pillar VCSEL microcavities. In DPG Frühjahrstagung, Regensburg (Germany), 2010.



7. K Gries, F. Heinemann, A. Ziegler, A. Rosenauer, and M. Fritz. The influence of the insoluble and soluble matrix on the growth of calcium carbonate crystals. In Gordons Research Conference, Biomineralization, New London (NH, USA), 2010 [poster], 2010.



8. Moritz Speckmann, Thomas Schmidt, Jan Ingo Flege, Inga Heidmann, Andre Kubelka, Locatelli A., T. O. Mentes, M. A. Nino, Knut Müller, Andreas Rosenauer, and Jens Falta. Facets, mazes, slabs, and nanowires: silver-mediated germanium growth on silicon surfaces. In 37th International conference on Vacuum Ultraviolet and X-ray Physics (VUVX), Vancouver (Canada) [Talk], 2010.



9. T. Aschenbrenner, S. Figge, D. Hommel, M. Schowalter, and A. Rosenauer. MOVPE-growth of a-plane InGaN quantum wells on GaN buffer layers on r-plane sapphire substrates. In IC-MOVPE, 1.-6. June 2008, 2008.



10. D. Litvinov, D. Gerthsen, A. Rosenauer, B. Daniel, and M. Hetterich. Investigation of the growth and composition of ZnMnSe heterostructures by transmission electron microscopy Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 2, 451-452. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 2, 451-452, 2004.



11. D. Litvinov, A. Rosenauer, D. Gerthsen, P. Kratzert, M. Rabe, and F. Henneberger. Influence of ZnSe cap layer growth on the morphology and Cd distribution in CdSe/ZnSe quantum dot structures. In Proceedings of the SPIE - The Internation Society for Optical Engineering 5023 (2003) 42-4, 2003.



12. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Influence of growth interruptions on the composition of GaSb/GaAs quantum wells. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 53, 2002.



13. M. Schowalter, B. Neubauer, A. Rosenauer, D. Gerthsen, O. Schön, and M. Heuken. MOCVD growth of Ga(Al)N/InGaN/Ga(Al)N-Heterostructures: Influence of the Buffer Layer Al-Concentration an d Growth Duration on the In-Incorporation in InGaN. In MRS spring meeting 2001, San Francisco, 2001.



14. B. Neubauer, A. Rosenauer, D. Gerthsen, O. Schön, and M. Heuken. Influence of the growth duration on the In concentration in epitaxial InGaN layers,. In 12th European Congress on Electron Microscopy (EUREM 12), July 9-14 2000, Brno, Czech Republic, Proceedings, Volume II, P 281, 2000.



15. A. Rosenauer, W. Oberst, D. Gerthsen, and A. Förster. Atomic scale analysis of the indium distribution in InGaAs/GaAs(001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions,. In MRS Fall Meeting 1998, Symposium: Growth Instabilities and Decompostion DuringHeteroepitaxy. Thin Solid Films 357, 18-21, 1999.



16. T. Reisinger, S. Lankes, M. Kastner, A. Rosenauer, F. Franzen, M. Meier, and W. Gebhardt. Growth, Structural and Optical Characterization of MBE ZnCdSe/ZnSe QWs,. In 7th International Conference II-VI Compounds and Devices. Edinburgh, UK, 13-18 Aug 1995, J. Cryst. Growth 159, 510-513, 1996.



17. W. Gebhardt, T. Reisinger, B. Hahn, and A. Rosenauer. Growth of Large Gap II-VI Semiconductors by MBE and MOVPE: A Comparative Study,. In International Conference on Semiconductor Heteroepitaxy, Monpellier, France, July 4th to 7th, World Scientific, 1995, 51-58, 1995.



18. T. Reisinger, A. Rosenauer, F. Franzen, and W. Gebhardt. In-Situ Growth Control of ZnSe/GaAs and ZnCdSe Quantum Wells,. In International Conference on Semiconductor Heteroepitaxy, Monpellier, France, July 4th to 7th, World Scientific, 1995, 118-121, 1995.



19. H. Stanzl, A. Rosenauer, K. Wolf, M. Kastner, B. Hahn, and W. Gebhardt. MOVPE Growth of ZnSeTe on (111) and (001) GaAs Substrates,. In SPIE 2140 Epitaxial Growth Processes, Los Angeles (USA), 138-147, 1994.



20. H. Stanzl, A. Rosenauer, K. Wolf, A. Naumov, S. Lankes, M. Kastner, F. Gilg, G. Hirmer, T. Starke, and W. Gebhardt. MOVPE Growth and Characterization of ZnTeSe-Epilayers and ZnTe/ZnTeSe SQWs. In DPG Frühjahrstagung, Münster (Germany) 13th General Conference of the Condensed Matter Division (European Physical Society) in conjunction with Arbeitskreis Festkörperphysik (Deutsche Physikalische Gesellschaft), Europhysics Conference Abstracts 17A, 1425, 1993.

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