1. A. Schneider, K. Sebald, A. Dev, K. Frank, A. Rosenauer, and T. Voss. Towards optical hyperdoping of binary oxide semiconductors. Journal of Applied Physics, 113(14):143512, 2013. [WWW] [doi:10.1063/1.4801531] Keyword(s): antimony, high-frequency effects, high-speed optical techniques, II-VI semiconductors, nanostructured materials, semiconductor doping, surface structure, wide band gap semiconductors.



2. Marco Schowalter, Knut Müller, and Andreas Rosenauer. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III--V and II--VI semiconductors. Acta Crystallographica Section A, 68(1):68-76, January 2012. [doi:10.1107/S010876731103777] Keyword(s): scattering factors, static atomic displacements, modified atomic scattering amplitudes, correction factor.



3. M. Schowalter, A. Rosenauer, J. T. Titantah, and D. Lamoen. Computation and parametrization of the temperature dependence of Debye-Waller factors for group IV, III-V and II-VI semiconductors. Acta Crystallogr., Sect. A, 65(1):5-17, January 2009. [doi:10.1107/S0108767308031437] Keyword(s): Debye-Waller factors, semiconductors, force constants, phonon densities of states.



4. M. Schowalter, A. Rosenauer, D. Lamoen, P. Kruse, and D. Gerthsen. Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold. Applied Physics Letters, 88(23):232108-232108-3, 2006. ISSN: 0003-6951. [doi:10.1063/1.2210453] Keyword(s): APW calculations, II-VI semiconductors, III-V semiconductors, ab initio calculations, aluminium compounds, cadmium compounds, density functional theory, electric potential, gallium compounds, gold, indium compounds, monolayers, wide band gap semiconductors, zinc compounds, 7361Ey, 7361Ga.



5. E. Müller, P. Kruse, D. Gerthsen, M. Schowalter, A. Rosenauer, D. Lamoen, R. Kling, and A. Waag. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography. Applied Physics Letters, 86(15):154108-154108-3, 2005. ISSN: 0003-6951. [doi:10.1063/1.1901820] Keyword(s): II-VI semiconductors, electron holography, nanoparticles, transmission electron microscopy, wide band gap semiconductors, zinc compounds, 4240Lx, 6146+w, 6837Lp.



6. M. Schowalter, D. Lamoen, A. Rosenauer, P. Kruse, and D. Gerthsen. First-principles calculations of the mean inner Coulomb potential for sphalerite type II-VI semiconductors. Appl. Phys. Lett., 85(21):4938-4940, November 2004. [doi:10.1063/1.1823598] Keyword(s): mip, sphalerite, semiconductor, mean inner Coulomb potential.



7. D. Litvinov, A. Rosenauer, D. Gerthsen, P. Kratzert, M. Rabe, and F. Henneberger. Influence of the growth procedure on the Cd distribution in CdSe/ZnSe heterostructures: Stranski--Krastanov versus two-dimensional islands. Applied Physics Letters, 81(4):640-642, 2002. [WWW] [doi:10.1063/1.1496133] Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor heterojunctions, molecular beam epitaxial growth, semiconductor growth, island structure, interface structure, atomic force microscopy, transmission electron microscopy, chemical interdiffusion.



8. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546-6552, 2002. ISSN: 0021-8979. [doi:10.1063/1.1516248] Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.



9. E. Kurtz, M. Schmidt, M. Baldauf, S. Wachter, M. Grün, H. Kalt, C. Klingshirn, D. Litvinov, A. Rosenauer, and D. Gerthsen. Suppression of lateral fluctuations in CdSe-based quantum wells. Applied Physics Letters, 79(8):1118-1120, 2001. [WWW] [doi:10.1063/1.1394172] Keyword(s): cadmium compounds, II-VI semiconductors, semiconductor quantum wells, fluctuations, photoluminescence, semiconductor growth, spectral line breadth, molecular beam epitaxial growth.



10. D. Litvinov, A. Rosenauer, D. Gerthsen, H. Preis, K. Fuchs, and S. Bauer. Growth and vertical correlation of CdSe/ZnSe quantum dots. Journal of Applied Physics, 89(7):3695-3699, 2001. ISSN: 0021-8979. [doi:10.1063/1.1352676] Keyword(s): II-VI semiconductors, cadmium compounds, island structure, molecular beam epitaxial growth, reflection high energy electron diffraction, semiconductor epitaxial layers, semiconductor growth, semiconductor quantum dots, transmission electron microscopy, zinc compounds, 6865Hb, 8105Dz, 8107Ta, 8115Hi.



11. D. Schikora, S. Schwedhelm, D. J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg. Investigations on the Stranski--Krastanow growth of CdSe quantum dots. Applied Physics Letters, 76(4):418-420, 2000. [WWW] [doi:10.1063/1.125773] Keyword(s): semiconductor quantum dots, molecular beam epitaxial growth, self-assembly, island structure, stacking faults, cadmium compounds, II-VI semiconductors, reflection high energy electron diffraction, photoluminescence, monolayers.



12. M. Strassburg, Th. Deniozou, A. Hoffmann, R. Heitz, U. W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, K. Lischka, and D. Schikora. Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structures. Applied Physics Letters, 76(6):685-687, 2000. [WWW] [doi:10.1063/1.125861] Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor quantum dots, semiconductor heterojunctions, island structure, transmission electron microscopy, monolayers, photoluminescence.



13. R. Engelhardt, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, and D. Gerthsen. Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures. Journal of Applied Physics, 86(10):5578-5583, 1999. ISSN: 0021-8979. [doi:10.1063/1.371563] Keyword(s): II-VI semiconductors, MOCVD coatings, cadmium compounds, excitons, plastic deformation, quantum well lasers, zinc compounds, 4255Px, 4260By, 7135-y, 8530Vw.



14. D. Luerssen, R. Bleher, H. Richter, Th. Schimmel, H. Kalt, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, K. Ohkawa, B. Jobst, and D. Hommel. Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures. Applied Physics Letters, 75(25):3944-3946, 1999. [WWW] [doi:10.1063/1.125502] Keyword(s): zinc compounds, magnesium compounds, II-VI semiconductors, wide band gap semiconductors, semiconductor quantum wells, stacking faults, defect states, interface states, interface structure, photoluminescence, atomic force microscopy, transmission electron microscopy, excitons.



15. M. Strassburg, V. Kutzer, U. W. Pohl, A. Hoffmann, I. Broser, N. N. Ledentsov, D. Bimberg, A. Rosenauer, U. Fischer, D. Gerthsen, I. L. Krestnikov, M. V. Maximov, P. S. Kop'ev, and Zh.I. Alferov. Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix. Applied Physics Letters, 72(8):942-944, 1998. [WWW] [doi:10.1063/1.120880] Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor quantum dots, island structure, monolayers, refractive index, transmission electron microscopy, biexcitons, excitons, phonon spectra, quantum well lasers, stimulated emission.

1. W. Gebhardt, T. Reisinger, B. Hahn, and A. Rosenauer. Growth of Large Gap II-VI Semiconductors by MBE and MOVPE: A Comparative Study,. In International Conference on Semiconductor Heteroepitaxy, Monpellier, France, July 4th to 7th, World Scientific, 1995, 51-58, 1995.

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