1. Knut Müller. Transmission electron microscopy of InGaNAs nanostructures using ab-initio structure factors for strain-relaxed supercells. PhD thesis, Universität Bremen, May 2011.

1. J. Pizarro, P.L. Galindo, E. Guerrero, A. Yanez, M. P. Guerrero, A. Rosenauer, D. L. Sales, and S.I. Molina. Simulation of high angle annular dark field scanning transmission electron microscopy images of large nanostructures. Applied Physics Letters, 93(15):153107-153107-3, 2008. ISSN: 0003-6951. [doi:10.1063/1.2998656] Keyword(s): indium compounds, nanowires, scanning electron microscopy, semiconductor quantum wires, 6146Km, 6837Hk, 6865La.



2. EHM Rossi, A. Rosenauer, and G. Van Tendeloo. Influence of strain, specimen orientation and background estimation on composition evaluation of InAs/GaAs by TEM. Philosophical Magazine, 87(29):4461-4473, 2007. [WWW] [doi:10.1080/14786430701551905]



3. P. Kruse, A. Rosenauer, and D. Gerthsen. Determination of the mean inner potential in III-V semiconductors by electron holography. Ultramicroscopy, 96(1):11-16, 2003. ISSN: 0304-3991. [WWW] [doi:10.1016/S0304-3991(02)00376-5] Keyword(s): III-V semiconductors.



4. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in In(x)Ga(1-x)As/GaAs$ Stranski-Krastanow layers}. Phys. Rev. B, 64(24):245334, December 2001. [doi:10.1103/PhysRevB.64.245334]



5. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Investigation of In segregation in InAs/AlAs quantum-well structures. Appl. Phys. Lett., 79(26):4426-4428, December 2001. Keyword(s): segregation, InAs, In, As, InAs/AlAs, AlAs, Al, As, quantum-well.



6. A.F. Tsatsul’Nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maximov, A.Yu Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, P.S. Kop’Ev, Zh.I. Alferov, I.A. Kozin, M.V. Belousov, I.P. Soshnikov, P. Werner, D. Litvinov, U. Fischer, A. Rosenauer, and D. Gerthsen. Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition. Journal of Electronic Materials, 28(5):537-541, 1999. ISSN: 0361-5235. [doi:10.1007/s11664-999-0108-9] Keyword(s): Lasing, quantum dots, submonolayer, vertical correlation.

1. D. Gerthsen, H. Blank, D Litvinov, R. Schneider, A. Rosenauer, T. Passow, A. Grau, P. Feinäugle, H. Kalt, C. Klingshirn, and M. Hetterich. On the incorporation of indium in InAs-based quantum structures. In Journal of Physics: Conference Series 209, 012006, 2010.



2. M. Melzer, Marco Schowalter, Andreas Rosenauer, D. Gerthsen, and J. P. Reithmaier. Untersuchung der Segregation von In in InAs/AlAs Heterostrukturen. In DPG Frühjahrstagung, Dresden (Germany) Verhandl. DPG (VI) 38, 1, 186, 2003.



3. Marco Schowalter, Andreas Rosenauer, Dagmar Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Untersuchung der Segregation von In in InAs/AlAs Heterostrukturen. In DPG Frühjahrstagung, Regensburg (Germany) Verhandl. DPG (VI) 37, 1, 163, 2002.



4. A. Rosenauer, D. Van Dyck, D. Gerthsen, M. Arzberger, G. Böhm, and G. Abstreiter. Structural and chemical investigation of InAs/GaAs nanostructures by transmission electron microscopy,. In International Conference on Semiconductor Quantum Dots (QD 2000). - 31 July-3 Aug. 2000 Phys. Status Solidi B 224, 213-16, 2001.

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