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Publications about 'InGaAs'
Articles in journal, book chapters
  1. Elias Goldmann, Matthias Paul, Florian F. Krause, Knut Müller, Jan Kettler, Thorsten Mehrtens, Andreas Rosenauer, Michael Jetter, Peter Michler, and Frank Jahnke. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 micrometers. Applied Physics Letters, 105(15):152102, 2014. [doi:10.1063/1.4898186]


  2. Duggi V. Sridhara Rao, Ramachandran Sankarasubramanian, Kuttanellore Muraleedharan, Thorsten Mehrtens, Andreas Rosenauer, and Dipankar Banerjee. Quantitative Strain and Compositional Studies of InGaAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques. Microscopy and Microanalysis, 20:1262-1270, 8 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614000762]


  3. Vincenco Grillo, Knut Müller, Frank Glas, Kerstin Volz, and Andreas Rosenauer. Toward Simultaneous Assessment of In and N in InGaAsN Alloys by Quantitative STEM-ADF Imaging. Microscopy and Microanalysis, 17:1862-1863, 7 2011. ISSN: 1435-8115. [WWW] [doi:10.1017/S143192761101018X]


  4. V. Grillo, K. Müller, K. Volz, F. Glas, T. Grieb, and A. Rosenauer. Strain, composition and disorder in ADF imaging of semiconductors. Journal of Physics: Conference Series, 326(1):012006, 2011. [WWW]


  5. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in $In_{x}Ga_{1-{}x}As$. Phys. Rev. B, 74(16):165306, October 2006. [doi:10.1103/PhysRevB.74.165306]


  6. M. Schowalter, A. Rosenauer, and D. Gerthsen. Influence of surface segregation on the optical properties of semiconductor quantum wells. Applied Physics Letters, 88(11):111906-111906-3, 2006. ISSN: 0003-6951. [doi:10.1063/1.2184907] Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, photoluminescence, semiconductor quantum wells, surface segregation, 6835Dv, 7855Cr, 7867De.


  7. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron scattering in strained In(x)Ga(1-x)As. Phys. Rev. B, 72:085326, August 2005. [doi:10.1103/PhysRevB.72.085326] Keyword(s): structure factor, strain, InGaAs, In, Ga, As, first-principles calculation, electron scattering.


  8. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Hetterich, A. Grau, Ph. Gilet, and L. Grenouillet. Determination of the nitrogen distribution in InGaNAs/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 85:3743-3745, 2004.


Conference articles
  1. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A method to avoid strain field induced artifacts in 2D chemical mapping of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis [Talk 595], volume 18, pages 1028-1029, 2012. [doi:10.1017/S143192761200699X]


  2. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain analysis by nano-beam electron diffraction (SANBED) in semiconductor nanostructures [Invited talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, pages 36, 2012. Keyword(s): SANBED.


  3. Vincenzo Grillo, Frank Glas, Knut Müller, and Andreas Rosenauer. Simulation of STEM-HAADF microscopy images for the chemical quantification in InGaAsN alloys. In Transnational Access Meeting (TAM), Helsinki (Finland) [Poster presentation], 2010.


  4. Thorsten Mehrtens, Knut Müller, Marco Schowalter, Nils Neugebohrn, Andreas Rosenauer, Dongzhi Hu, and Daniel Schaadt. Towards a quantitative concentration analysis in InGaAs-heterostructures using HAADF-STEM. In G. Kothleitner and M. Leisch, editors, MC2009, Graz (Austria) Vol. 1: Instrumentation and Methodology, pages 219-220, 2009.


  5. Thorsten Mehrtens, Marco Schowalter, Knut Müller, Andreas Rosenauer, Dongzhi Hu, and Daniel Schaadt. Analysis of segregation profiles in InGaAs quantum wells via TEM and STEM. In Verhandlungen der DPG, number HL 1.6, 2009.


  6. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, and M. Hetterich. The role of segregation in InGaAs heteroepitaxy. In presented at THERMEC, Advanced thin films and nanomaterials (2006) Materials Science Forum Vols. 539-543 (2007) 3540-3545, 2007.


  7. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, and M. Hetterich. The role of segregation in InGaAs heteroepitaxy. In Materials Science Forum, 539-543, (2007), 3540, 2007.


  8. J. T. Titantah, D. Lamoen, M. Schowalter, and Rosenauer. Bond length variations in InGaAs crystals fom Tersoff potential. In Springer Proceedings in Physics: MSM(2007), 2007.


  9. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission Electron Microscopy Study of In-Segregation and Critical Floating-Layer Content of Indium for Island Formation in InGaAs. In Proceedings of the International Microscopy Conference 16, Sapporo, Japan (2006), 2006.


  10. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. Ab initio computation of 002 structure factors for electron scattering in strained InGaAs. In Proceedings of DFTEM, Vienna (2006), 2006.


  11. D. Litvinov, D. Gerthsen, A. Rosenauer, T. Passow, M. Grün, C. Klingshirn, and M. Hetterich. In-distribution in InGaAs Quantum Wells and Quantum Islands. In Presented at MCMXIV, Oxford, 2005.


  12. E. Piscopiello, A. Rosenauer, A. Passaseo, and G. Van Tendeloo. Segregation in InGaAs/GaAs quantum wells grown by MOCVD Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 123-124. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 123-124, 2004.


  13. M. Schowalter, A. Rosenauer, D. Lamoen, and D. Gerthsen. Strain state analysis of InGAAs/GaAs heterostructures: Elastic relaxation in cross section and cleaved specimen,. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 129-130, 2004.


  14. A. Rosenauer, M. Melzer, M. Schowalter, D. Gerthsen, E. Piscopiello, A. Passaseo, R. Cingolani, R. Reithmaier, J. P. amd Krebs, A. Forchel, and G. Van Tendeloo. Segregation in InGaAs/GaAs Quantum Wells: MOCVD versus MBE. In Microscopy Conference MC2003, International Forum for Advanced Microscopy, September 7-12, 2003, Dresden, Germany Micrsocopy and Microanalysis 9 (2003) 230-1, 2003.


  15. M. Schowalter, A. Rosenauer, D. Gerthsen, R. Sellin, and D. Bimberg. Structure factors for the composition determination of InGaAs/GaAs quantum wells with the 002 beam: Isolated atom approximation versus density function theory. In Microscopy Conference MC2003, International Forum for Advanced Microscopy, September 7-12, 2003, Dresden, Germany Microscopy and Microanalysis 9 (2003), 234-5, 2003.


  16. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in InGaAs/GaAs quantum dot structrues. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 59, 2002.


  17. W. Oberst, A. Rosenauer, D. Gerthsen, and A. Förster. Quantitative transmissionselektronenmikroskopische Untersuchung von InGaAs/GaAs-Quantenpunktstrukturen. In DPG Frühjahrstagung, Münster (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1999, Münster, Verhandl. DPG (VI) 34, 1999, 768, 1999.


  18. A. Rosenauer, W. Oberst, D. Gerthsen, and A. Förster. Atomic scale analysis of the indium distribution in InGaAs/GaAs(001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions,. In MRS Fall Meeting 1998, Symposium: Growth Instabilities and Decompostion DuringHeteroepitaxy. Thin Solid Films 357, 18-21, 1999.


  19. U. Fischer, A. Rosenauer, T. Remmele, D. Gerthsen, and A. Förster. HRTEM-Untersuchung von InGaAs/GaAs(001) - Inselstrukturen. In DPG Frühjahrstagung, Regensburg (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1998, Regensburg, Verhandl. DPG (VI) 33, 1998, 728, 1998.


Miscellaneous
  1. Thorsten Mehrtens. Bestimmung von Segregationsprofilen in InGaAs/GaAs-Quantentrögen mittels konventioneller und Rastertransmissionselektronenmikroskopie. Master's thesis, Universität Bremen, 2009.



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Last modified: Wed Sep 21 12:45:11 2016
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