1. Matthias Lohr, Ralph Schregle, Michael Jetter, Clemens Wächter, Knut Müller-Caspary, Thorsten Mehrtens, Andreas Rosenauer, Ines Pietzonka, Martin Strassburg, and Josef Zweck. Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures. physica status solidi (b), 253:140-144, 2016. ISSN: 1521-3951. [doi:10.1002/pssb.201552288] Keyword(s): DPC, Efficiency droop, EFTEM, electric fields, GaN, HAADF, IMFP, MQW, QCSE, quantification, STEM.



2. A. Rosenauer, D. Gerthsen, and V. Potin. Strain state analysis of InGaN/GaN - sources of error and optimized imaging conditions. Phys. Status Solidi A, 203(1):176-184, January 2006. [doi:10.1002] Keyword(s): InGaN/GaN, In, Ga, N, optimised imaging conditions, optimized imaging conditions, aberrations, strain, strain state.



3. Meng-Ku Chen, Yung-Chen Cheng, Jiun-Yang Chen, Cheng-Ming Wu, C.C. Yang, Kung-Jen Ma, Jer-Ren Yang, and Andreas Rosenauer. Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells. Journal of Crystal Growth, 279(1-2):55-64, 2005. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2005.02.018] Keyword(s): A1. Segregation.



4. Yung-Chen Cheng, Cheng-Ming Wu, C. C. Yang, Gang Alan Li, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, and L. C. Chen. Effects of interfacial layers in InGaN/GaN quantum-well structures on their optical and nanostructural properties. Journal of Applied Physics, 98(1):014317, 2005. [WWW] [doi:10.1063/1.1978988] Keyword(s): indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, nanostructured materials, photoluminescence, electroluminescence, Stark effect.



5. Yung-Chen Cheng, En-Chiang Lin, Cheng-Ming Wu, C.C. Yang, Jer-Ren Yang, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, L.C. Chen, Chang-Chi Pan, and Jen-Inn Chyi. Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions. Applied Physics Letters, 84(14):2506-2508, 2004. ISSN: 0003-6951. [doi:10.1063/1.1690872] Keyword(s): III-V semiconductors, gallium compounds, indium compounds, photoluminescence, quantum confined Stark effect, semiconductor doping, semiconductor quantum wells, silicon, wide band gap semiconductors, 6172Vv, 6865Fg, 7855Cr, 7867De.



6. Yung-Chen Cheng, Cheng-Ming Wu, Meng-Kuo Chen, C. C. Yang, Zhe-Chuan Feng, Gang Alan Li, Jer-Ren Yang, Andreas Rosenauer, and Kung-Je Ma. Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers. Applied Physics Letters, 84(26):5422-5424, 2004. [WWW] [doi:10.1063/1.1767603] Keyword(s): indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, photoluminescence, electroluminescence, monolayers.



7. V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano, and N. Grandjean. Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy. Journal of Crystal Growth, 262(1-4):145-150, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.10.082] Keyword(s): A1. Metalorganic vapor phase epitaxy.



8. I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, Yu.G. Musikhin, A.P. Kartashova, A.S. Usikov, A.F. Tsatsul’nikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A.C. Plaut, A.A. Hoffmann, and D. Bimberg. Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots. Semiconductors, 34(4):481-487, 2000. ISSN: 1063-7826. [doi:10.1134/1.1188011]

1. M. Müller, S. Metzner, T. Hempel, P. Veit, F. Bertram, F F Krause, T. Mehrtens, K. Müller-Caspary, A Rosenauer, T. Schimpke, A. Avramescu, M. Strassburg, and J. Christen. Optical, structural and compositional nano-scale characterization of InGaN/GaN core-shell microrod heterostructucom (Talk). In Proceedings of the Society of Photo-Optical Instrumentation Engineers Photonics West 2016 (SPIE Photonics West 2016) , San Francisco (USA), 2016.



2. M. Müller, S. Metzner, T. Hempel, P. Veit, F. Bertram, F. F. Krause, T. Mehrtens, K. Müller-Caspary, A. Rosenauer, T. Schimpke, M. Strassburg, and J. Christen. Nanoscale Characterization of InGaN/GaN core-shell microrods: Correlation of the optical properties and the composition of the InGaN single quantum well (Talk). In Proceedings of the International Conference on Nitride Semiconductors 2015 (ICNS 11), Peking (CHN), 2015.



3. T. Schimpke, M. Binder, B. Galler, J. Hartmann, A. Waag, F. F. Krause, T. Mehrtens, A. Rosenauer, M. Müller, S. Metzner, P. Veit, F. Bertram, J. Christen, and H-J. Lugauer M. Strassburg1. Control of emission wavelength gradient along the m-plane facet of high aspect-ratio core-shell InGaN/GaN microrod LED structures (Talk). In Proceedings des Arbeitskreistreffens der Deutsche Gesellschaft für Kristallwachstum und Kristallzüchtung e.V. Arbeitskreis Epitaxie von III-V-Halbleitern 2014(AK III-V DGKK 29), Magdeburg (D), 2014.



4. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S. A. Gerstl, Pyuck-Pa Choi, Dierk Raabe, Adrian Avramescu, and Andreas Rosenauer. Determination of composition in InGaN/GaN heterostructures using (S)TEM, Atom Probe Tomography and Photoluminescence. In E-MRS Spring Meeting 2011, Nice (France) [Talk], 2011.



5. A. Rosenauer and D. Gerthsen. Optimum imaging conditions for strain state analysis of InGaN/GaN heterostructures. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 103-104, 2004.



6. V. Potin, E. Hahn, M. Schowalter, A. Rosenauer, D. Gerthsen, B. Kuhn, and F. Scholz. Quantitative analysis of the In-distribution in InGaN/GaN-heterostructures. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, 2002.



7. V. Potin, E. Hahn, A. Rosenauer, and D. Gerthsen. Determination of indium composition fluctuation in InGaN/GaN quantum wells by quantitative high resolution electron microscopy. In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Inst. Phys. Conf. Ser. 169, 25-28 Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.



8. M. Müller, S. Metzner, T. Hempel, P. Veit, F. Bertram, F F Krause, T Mehrtens, K. Müller-Caspary, A Rosenauer, T. Schimpke, A. Avramescu, M. Strassburg, and J. Christen. Optical, structural and compositional nano-scale characterization of InGaN/GaN core-shell microrod heterostructures (Talk). In Society of Photo-Optical Instrumentation Engineers Photonics West 2016 (SPIE Photonics West 2016) , San Francisco (USA), .

1. Patrick Karasch. Messung von Verspannungen und piezoelektrischen Feldern in InGaN/GaN Quantentrögen mittels Elektronenbeugung (Measurement of strain and piezoelectric fields in InGaN/GaN quantum wells by electron diffraction), August 2012.

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