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Publications about 'interface structure'
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Articles in journal, book chapters
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D. Litvinov,
A. Rosenauer,
D. Gerthsen,
P. Kratzert,
M. Rabe,
and F. Henneberger.
Influence of the growth procedure on the Cd distribution in CdSe/ZnSe heterostructures: Stranski--Krastanov versus two-dimensional islands.
Applied Physics Letters,
81(4):640-642,
2002.
[WWW]
[doi:10.1063/1.1496133]
Keyword(s): cadmium compounds,
zinc compounds,
II-VI semiconductors,
semiconductor heterojunctions,
molecular beam epitaxial growth,
semiconductor growth,
island structure,
interface structure,
atomic force microscopy,
transmission electron microscopy,
chemical interdiffusion.
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N. Ledentsov,
D. Litvinov,
A. Rosenauer,
D. Gerthsen,
I. Soshnikov,
V. Shchukin,
V. Ustinov,
A. Egorov,
A. Zukov,
V. Volodin,
M. Efremov,
V. Preobrazhenskii,
B. Semyagin,
D. Bimberg,
and Zh. Alferov.
Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces.
Journal of Electronic Materials,
30:463-470,
2001.
ISSN: 0361-5235.
[doi:10.1007/s11664-001-0084-1]
Keyword(s): Chemie und Materialwissenschaften.
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D. Luerssen,
R. Bleher,
H. Richter,
Th. Schimmel,
H. Kalt,
A. Rosenauer,
D. Litvinov,
A. Kamilli,
D. Gerthsen,
K. Ohkawa,
B. Jobst,
and D. Hommel.
Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures.
Applied Physics Letters,
75(25):3944-3946,
1999.
[WWW]
[doi:10.1063/1.125502]
Keyword(s): zinc compounds,
magnesium compounds,
II-VI semiconductors,
wide band gap semiconductors,
semiconductor quantum wells,
stacking faults,
defect states,
interface states,
interface structure,
photoluminescence,
atomic force microscopy,
transmission electron microscopy,
excitons.
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B. Neubauer,
A. Rosenauer,
D. Gerthsen,
O. Ambacher,
and M. Stutzmann.
Analysis of composition fluctuations on an atomic scale in Al(0.25)Ga(0.75)N by high-resolution transmission electron microscopy.
Applied Physics Letters,
73(7):930-932,
1998.
[WWW]
[doi:10.1063/1.122041]
Keyword(s): aluminium compounds,
gallium compounds,
wide band gap semiconductors,
III-V semiconductors,
stoichiometry,
fluctuations,
transmission electron microscopy,
lattice constants,
semiconductor heterojunctions,
interface structure,
semiconductor epitaxial layers.
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M. Grun,
C. Klingshirn,
A. Rosenauer,
J. Zweck,
and W. Gebhardt.
Spatial confinement of misfit dislocations at the interface of CdSe/GaAs(111).
Applied Physics Letters,
63(21):2947-2948,
1993.
ISSN: 0003-6951.
[doi:10.1063/1.110281]
Keyword(s): 6172Ff,
6855Ln,
6865+g,
BURGERS VECTOR,
CADMIUM SELENIDES,
ELECTRON MICROSCOPY,
EPITAXIAL LAYERS,
GALLIUM ARSENIDES,
HETEROSTRUCTURES,
INTERFACE STRUCTURE,
MISFIT DISLOCATIONS.
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Last modified: Wed Sep 21 12:45:11 2016
Author: knut.
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