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2. T. Mehrtens, M. Schowalter, D. Tytko, P. Choi, D. Raabe, L. Hoffmann, H. Jönen, U. Rossow, A. Hangleiter, and A. Rosenauer. Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. Applied Physics Letters, 102(13):132112, 2013. [WWW] [doi:10.1063/1.4799382] Keyword(s): gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, quantum well lasers, scanning-transmission electron microscopy, semiconductor quantum wells, wide band gap semiconductors.



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4. M. Florian, F. Jahnke, A. Pretorius, A. Rosenauer, H. Dartsch, C. Kruse, and D. Hommel. Influence of growth imperfections on optical properties of nitride pillar VCSEL microcavities. physica status solidi (b), 248(8):1867-1870, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147159] Keyword(s): lasers, laser diodes, microcavities, optical properties, III-V semiconductors.



5. R. Engelhardt, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, and D. Gerthsen. Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures. Journal of Applied Physics, 86(10):5578-5583, 1999. ISSN: 0021-8979. [doi:10.1063/1.371563] Keyword(s): II-VI semiconductors, MOCVD coatings, cadmium compounds, excitons, plastic deformation, quantum well lasers, zinc compounds, 4255Px, 4260By, 7135-y, 8530Vw.



6. M. Strassburg, V. Kutzer, U. W. Pohl, A. Hoffmann, I. Broser, N. N. Ledentsov, D. Bimberg, A. Rosenauer, U. Fischer, D. Gerthsen, I. L. Krestnikov, M. V. Maximov, P. S. Kop'ev, and Zh.I. Alferov. Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix. Applied Physics Letters, 72(8):942-944, 1998. [WWW] [doi:10.1063/1.120880] Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor quantum dots, island structure, monolayers, refractive index, transmission electron microscopy, biexcitons, excitons, phonon spectra, quantum well lasers, stimulated emission.

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