1. Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Gerd Kunert, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. A structural investigation of highly ordered catalyst- and mask-free GaN nanorods. Nanotechnology, 22(2):025603, 2011. [WWW]



2. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga$_{1-x}$In$_x$As/GaAs quantum wells. J. Appl. Phys., 105(8):084310, 2009. [WWW] [doi:10.1063/1.3115407] Keyword(s): arsenic compounds, density functional theory, gallium arsenide, gallium compounds, III-V semiconductors, indium compounds, lattice constants, Monte Carlo methods, nanostructured materials, semiconductor heterojunctions, semiconductor quantum wells.



3. D. Gerthsen, B. Neubauer, A. Rosenauer, T. Stephan, H. Kalt, O. Schon, and M. Heuken. InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition. Applied Physics Letters, 79(16):2552-2554, 2001. ISSN: 0003-6951. [doi:10.1063/1.1409949] Keyword(s): III-V semiconductors, MOCVD, gallium compounds, indium compounds, lattice constants, photoluminescence, red shift, semiconductor growth, semiconductor quantum wells, spectral line intensity, transmission electron microscopy, wide band gap semiconductors, 6865Fg, 7855Cr, 7867De, 8107St, 8115Gh.



4. B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, and M. Stutzmann. Analysis of composition fluctuations on an atomic scale in Al(0.25)Ga(0.75)N by high-resolution transmission electron microscopy. Applied Physics Letters, 73(7):930-932, 1998. [WWW] [doi:10.1063/1.122041] Keyword(s): aluminium compounds, gallium compounds, wide band gap semiconductors, III-V semiconductors, stoichiometry, fluctuations, transmission electron microscopy, lattice constants, semiconductor heterojunctions, interface structure, semiconductor epitaxial layers.



5. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Forster. Composition evaluation of In(x)Ga(1-x)As Stranski-Krastanow-island structures by strain state analysis. Applied Physics Letters, 71(26):3868-3870, 1997. [WWW] [doi:10.1063/1.120528] Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, island structure, transmission electron microscopy, lattice constants, molecular beam epitaxial growth, semiconductor epitaxial layers, finite element analysis, segregation, semiconductor growth.



6. S. Bauer, A. Rosenauer, P. Link, W. Kuhn, J. Zweck, and W. Gebhardt. Misfit dislocations in epitaxial ZnTe/GaAs (001) studied by {HRTEM}. Ultramicroscopy, 51(1-4):221-227, 1993. ISSN: 0304-3991. [WWW] [doi:10.1016/0304-3991(93)90148-Q]

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