1. H. Kauko, B. O. Fimland, T. Grieb, A. M. Munshi, K. Müller, A. Rosenauer, and A. T. J. van Helvoort. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires. Journal of Applied Physics, 116(14):144303, 2014. [doi:10.1063/1.4896904]



2. A. Rath, J. K. Dash, R. R. Juluri, A. Ghosh, T. Grieb, M. Schowalter, F. F. Krause, K. Müller, A. Rosenauer, and P. V. Satyam. A study of the initial stages of the growth of Au-assisted epitaxial Ge nanowires on a clean Ge(100) surface. CrystEngComm, 16:2486-2490, 2014. [doi:10.1039/C3CE42254B]



3. A. Rath, J. K. Dash, R. R. Juluri, M. Schowalter, K. Müller, A. Rosenauer, and P. V. Satyam. Nano scale phase separation in Au-Ge system on ultra clean Si (100) surfaces. Journal of Applied Physics, 111:104319, 2012. [WWW] [doi:10.1063/1.4721666]



4. T. Aschenbrenner, G. Kunert, W. Freund, C. Kruse, S. Figge, M. Schowalter, C. Vogt, J. Kalden, K. Sebald, A. Rosenauer, J. Gutowski, and D. Hommel. Catalyst free self-organized grown high-quality GaN nanorods. physica status solidi (b), 248(8):1787-1799, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147148] Keyword(s): MBE, MOVPE, nanorods, nitrides, TEM, III-V semiconductors.



5. Angelika Pretorius, Thomas Schmidt, Timo Aschenbrenner, Tomohiro Yamaguchi, Christian Kübel, Knut Müller, Heiko Dartsch, Detlef Hommel, Jens Falta, and Andreas Rosenauer. Microstructural and compositional analyses of GaN based nanostructures. Physica Status Solidi, 248:1822-1836, 2011. [doi:10.1002/pssb.201147175]



6. A. Pretorius, T. Yamaguchi, C. Kübel, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigation of growth and dissolution of nano-islands grown by molecular beam epitaxy. Journal of Crystal Growth, 310(4):748-756, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2007.11.203] Keyword(s): A1. High resolution transmission electron microscopy.



7. V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano, and N. Grandjean. Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy. Journal of Crystal Growth, 262(1-4):145-150, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.10.082] Keyword(s): A1. Metalorganic vapor phase epitaxy.



8. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668-1683, 2003. ISSN: 1610-1642. [doi:10.1002/pssc.200303129] Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.



9. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546-6552, 2002. ISSN: 0021-8979. [doi:10.1063/1.1516248] Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.



10. W.S. Kuhn, A. Lusson, B. Qu'Hen, C. Grattepain, H. Dumont, O. Gorochov, S. Bauer, K. Wolf, M. Wörz, T. Reisinger, A. Rosenauer, H.P. Wagner, H. Stanzl, and W. Gebhardt. The metal organic vapour phase epitaxy of ZnTe: III. Correlation of growth and layer properties. Progress in Crystal Growth and Characterization of Materials, 31(1-2):119-177, 1995. ISSN: 0960-8974. [WWW] [doi:10.1016/0960-8974(95)00018-6]

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2. E. Roventa, G. Alexe, M. Schowalter, R. Kroeger, D. Hommel, and A. Rosenauer. Anisotropic Spatial Correlation of CdSe/Zn(S)Se Quantum dot Stacks Grown by MBE. In Presented at 12th International Conference on II-VI Compounds, September 12-16, Warsaw, Poland Phys. Stat. Sol.-C, 3 (2006) 887-890, 2006.



3. A. Rosenauer, M. Melzer, M. Schowalter, D. Gerthsen, E. Piscopiello, A. Passaseo, R. Cingolani, R. Reithmaier, J. P. amd Krebs, A. Forchel, and G. Van Tendeloo. Segregation in InGaAs/GaAs Quantum Wells: MOCVD versus MBE. In Microscopy Conference MC2003, International Forum for Advanced Microscopy, September 7-12, 2003, Dresden, Germany Micrsocopy and Microanalysis 9 (2003) 230-1, 2003.



4. M. Schowalter, A. Rosenauer, D. Gerthsen, R. Sellin, and D. Bimberg. Segregation in MBE and MOCVD: A comparison. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 113, 2002.



5. T. Reisinger, S. Lankes, M. Kastner, A. Rosenauer, F. Franzen, M. Meier, and W. Gebhardt. Growth, Structural and Optical Characterization of MBE ZnCdSe/ZnSe QWs,. In 7th International Conference II-VI Compounds and Devices. Edinburgh, UK, 13-18 Aug 1995, J. Cryst. Growth 159, 510-513, 1996.



6. W. Gebhardt, T. Reisinger, B. Hahn, and A. Rosenauer. Growth of Large Gap II-VI Semiconductors by MBE and MOVPE: A Comparative Study,. In International Conference on Semiconductor Heteroepitaxy, Monpellier, France, July 4th to 7th, World Scientific, 1995, 51-58, 1995.



7. G. Schütz, Rose., T. Reisinger, and W. Gebhardt. TEM-Untersuchung der Spannungsrelaxation in MBE ZnSe/GaAs(001). In DPG Frühjahrstagung, Berlin (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1995, Berlin, Verhandl. DPG (VI) 30, 1995, 1213, 1995.

1. Thorsten Mehrtens. Bestimmung von Segregationsprofilen in InGaAs/GaAs-Quantentrögen mittels konventioneller und Rastertransmissionselektronenmikroskopie. Master's thesis, Universität Bremen, 2009.

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