1. T. Aschenbrenner, H. Dartsch, C. Kruse, M. Anastasescu, M. Stoica, M. Gartner, A. Pretorius, A. Rosenauer, Thomas Wagner, and D. Hommel. Optical and structural characterization of AlInN layers for optoelectronic applications. J. Appl. Phys., 108(6):063533, 2010. [WWW] [doi:10.1063/1.3467964] Keyword(s): aluminium compounds, annealing, distributed Bragg reflectors, extinction coefficients, III-V semiconductors, indium compounds, MOCVD coatings, refractive index, semiconductor epitaxial layers, surface morphology, surface roughness, transmission electron microscopy, vapour phase epitaxial growth, wide band gap semiconductors, X-ray diffraction.



2. E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, V. Perez-Solorzano, M. Jetter, and F. Scholz. In-Redistribution in a GaInN Quantum Well upon Thermal Annealing. physica status solidi (b), 234(3):738-741, 2002. ISSN: 1521-3951. [doi:10.1002/1521-3951(200212)234:3<738::AID-PSSB738>3.0.CO;2-X] Keyword(s): 64.75.+g, 66.30.Xj, 68.37.Lp, 78.55.Cr, 81.05.Ea.



3. D. Gerthsen, B. Neubauer, A. Rosenauer, T. Stephan, H. Kalt, O. Schon, and M. Heuken. InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition. Applied Physics Letters, 79(16):2552-2554, 2001. ISSN: 0003-6951. [doi:10.1063/1.1409949] Keyword(s): III-V semiconductors, MOCVD, gallium compounds, indium compounds, lattice constants, photoluminescence, red shift, semiconductor growth, semiconductor quantum wells, spectral line intensity, transmission electron microscopy, wide band gap semiconductors, 6865Fg, 7855Cr, 7867De, 8107St, 8115Gh.



4. I.P. Soshnikov, V.V. Lundin, A.S. Usikov, I.P. Kalmykova, N.N. Ledentsov, A. Rosenauer, B. Neubauer, and D. Gerthsen. Specifics of MOCVD formation of In(x)Ga(1−x)N inclusions in a GaN matrix. Semiconductors, 34(6):621-625, 2000. ISSN: 1063-7826. [doi:10.1134/1.1188041]



5. R. Engelhardt, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, and D. Gerthsen. Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures. Journal of Applied Physics, 86(10):5578-5583, 1999. ISSN: 0021-8979. [doi:10.1063/1.371563] Keyword(s): II-VI semiconductors, MOCVD coatings, cadmium compounds, excitons, plastic deformation, quantum well lasers, zinc compounds, 4255Px, 4260By, 7135-y, 8530Vw.

1. E. Piscopiello, A. Rosenauer, A. Passaseo, and G. Van Tendeloo. Segregation in InGaAs/GaAs quantum wells grown by MOCVD Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 123-124. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 123-124, 2004.



2. A. Rosenauer, M. Melzer, M. Schowalter, D. Gerthsen, E. Piscopiello, A. Passaseo, R. Cingolani, R. Reithmaier, J. P. amd Krebs, A. Forchel, and G. Van Tendeloo. Segregation in InGaAs/GaAs Quantum Wells: MOCVD versus MBE. In Microscopy Conference MC2003, International Forum for Advanced Microscopy, September 7-12, 2003, Dresden, Germany Micrsocopy and Microanalysis 9 (2003) 230-1, 2003.



3. M. Schowalter, A. Rosenauer, D. Gerthsen, R. Sellin, and D. Bimberg. Segregation in MBE and MOCVD: A comparison. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 113, 2002.



4. M. Schowalter, B. Neubauer, A. Rosenauer, D. Gerthsen, O. Schön, and M. Heuken. MOCVD growth of Ga(Al)N/InGaN/Ga(Al)N-Heterostructures: Influence of the Buffer Layer Al-Concentration an d Growth Duration on the In-Incorporation in InGaN. In MRS spring meeting 2001, San Francisco, 2001.



5. A. Naumov, K. Wolf, H. Stanzl, A. Rosenauer, S. Lankes, and W. Gebhardt. Exciton spectra of ZnSeTe epilayers and ZnTe/ZnSeTe/ZnTe SQWs grown by MOCVD. In DPG Frühjahrstagung, Münster (Germany) 13th General Conference of the Condensed Matter Division (European Physical Society) in conjunction with Arbeitskreis Festkörperphysik (Deutsche Physikalische Gesellschaft), Europhysics Conference Abstracts 17A, 1436, 1993.

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