1. H. Kauko, B. O. Fimland, T. Grieb, A. M. Munshi, K. Müller, A. Rosenauer, and A. T. J. van Helvoort. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires. Journal of Applied Physics, 116(14):144303, 2014. [doi:10.1063/1.4896904]



2. A. Rath, J. K. Dash, R. R. Juluri, A. Ghosh, T. Grieb, M. Schowalter, F. F. Krause, K. Müller, A. Rosenauer, and P. V. Satyam. A study of the initial stages of the growth of Au-assisted epitaxial Ge nanowires on a clean Ge(100) surface. CrystEngComm, 16:2486-2490, 2014. [doi:10.1039/C3CE42254B]



3. Malte Fandrich, Thorsten Mehrtens, Timo Aschenbrenner, Thorsten Klein, Martina Gebbe, Stephan Figge, Carsten Kruse, Andreas Rosenauer, and Detlef Hommel. Nitride based heterostructures with Ga- and N-polarity for sensing applications. Journal of Crystal Growth, 370(0):68-73, 2013. ISSN: 0022-0248. [WWW] Keyword(s): A1. Characterization, A3. Metalorganic vapor phase epitaxy, A3. Molecular beam epitaxy, B1. Nitrides, B3. Sensors.



4. A. Rath, J. K. Dash, R. R. Juluri, M. Schowalter, K. Müller, A. Rosenauer, and P. V. Satyam. Nano scale phase separation in Au-Ge system on ultra clean Si (100) surfaces. Journal of Applied Physics, 111:104319, 2012. [WWW] [doi:10.1063/1.4721666]



5. T. Aschenbrenner, G. Kunert, W. Freund, C. Kruse, S. Figge, M. Schowalter, C. Vogt, J. Kalden, K. Sebald, A. Rosenauer, J. Gutowski, and D. Hommel. Catalyst free self-organized grown high-quality GaN nanorods. physica status solidi (b), 248(8):1787-1799, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147148] Keyword(s): MBE, MOVPE, nanorods, nitrides, TEM, III-V semiconductors.



6. Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Gerd Kunert, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. A structural investigation of highly ordered catalyst- and mask-free GaN nanorods. Nanotechnology, 22(2):025603, 2011. [WWW]



7. Angelika Pretorius, Thomas Schmidt, Timo Aschenbrenner, Tomohiro Yamaguchi, Christian Kübel, Knut Müller, Heiko Dartsch, Detlef Hommel, Jens Falta, and Andreas Rosenauer. Microstructural and compositional analyses of GaN based nanostructures. Physica Status Solidi, 248:1822-1836, 2011. [doi:10.1002/pssb.201147175]



8. A Rath, J K Dash, R R Juluri, A Rosenauer, and P V Satyam. Temperature-dependent electron microscopy study of Au thin films on Si (1 0 0) with and without a native oxide layer as barrier at the interface. Journal of Physics D: Applied Physics, 44(11):115301, 2011. [WWW]



9. A. Pretorius, T. Yamaguchi, C. Kübel, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigation of growth and dissolution of nano-islands grown by molecular beam epitaxy. Journal of Crystal Growth, 310(4):748-756, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2007.11.203] Keyword(s): A1. High resolution transmission electron microscopy.



10. E. Piscopiello, A. Rosenauer, A. Passaseo, E. H. Montoya Rossi, and G. Van Tendeloo. Segregation in In(x)Ga(1-x)As/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition. Philosophical Magazine, 85(32):3857-3870, 2005. [doi:10.1080/147830500269402]



11. E. Roventa, G. Alexe, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigations of spatial correlation of CdSe/ZnSe quantum dot stacks grown by molecular beam epitaxy. Journal of Crystal Growth, 278(1-4):316-319, 2005. Note: 13th International Conference on Molecular Beam Epitaxy. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2005.01.017] Keyword(s): A3. Migration enhanced epitaxy.



12. V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano, and N. Grandjean. Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy. Journal of Crystal Growth, 262(1-4):145-150, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.10.082] Keyword(s): A1. Metalorganic vapor phase epitaxy.



13. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668-1683, 2003. ISSN: 1610-1642. [doi:10.1002/pssc.200303129] Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.



14. D. Litvinov, A. Rosenauer, D. Gerthsen, H. Preis, K. Fuchs, and S. Bauer. Growth and vertical correlation of CdSe/ZnSe quantum dots. Journal of Applied Physics, 89(7):3695-3699, 2001. ISSN: 0021-8979. [doi:10.1063/1.1352676] Keyword(s): II-VI semiconductors, cadmium compounds, island structure, molecular beam epitaxial growth, reflection high energy electron diffraction, semiconductor epitaxial layers, semiconductor growth, semiconductor quantum dots, transmission electron microscopy, zinc compounds, 6865Hb, 8105Dz, 8107Ta, 8115Hi.



15. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in In(x)Ga(1-x)As/GaAs$ Stranski-Krastanow layers}. Phys. Rev. B, 64(24):245334, December 2001. [doi:10.1103/PhysRevB.64.245334]



16. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Investigation of In segregation in InAs/AlAs quantum-well structures. Appl. Phys. Lett., 79(26):4426-4428, December 2001. Keyword(s): segregation, InAs, In, As, InAs/AlAs, AlAs, Al, As, quantum-well.



17. A. Rosenauer, T. Reisinger, F. Franzen, G. Schutz, B. Hahn, K. Wolf, J. Zweck, and W. Gebhardt. Transmission electron microscopy and reflected high-energy electron-diffraction investigation of plastic relaxation in doped and undoped ZnSe/GaAs(001). Journal of Applied Physics, 79(8):4124-4131, 1996. [WWW] [doi:10.1063/1.361776] Keyword(s): DISLOCATIONS, DOPED MATERIALS, EPITAXIAL LAYERS, MOLECULAR BEAM EPITAXY, PLASTICITY, RHEED, STRESS RELAXATION, TEM, VPE, ZINC SELENIDES.



18. A. Rosenauer, T. Reisinger, E. Steinkirchner, J. Zweck, and W. Gebhardt. High resolution transmission electron microscopy determination of Cd diffusion in CdSeZnSe single quantum well structures. Journal of Crystal Growth, 152(1-2):42-50, 1995. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(95)00083-6]



19. K Wolf, S Jilka, A Rosenauer, G Schutz, H Stanzl, T Reisinger, and W Gebhardt. High-resolution X-ray diffraction investigations of epitaxially grown ZnSe/GaAs layers. Journal of Physics D: Applied Physics, 28(4A):A120, 1995. [WWW]

1. Thorsten Mehrtens. Bestimmung von Segregationsprofilen in InGaAs/GaAs-Quantentrögen mittels konventioneller und Rastertransmissionselektronenmikroskopie. Master's thesis, Universität Bremen, 2009.

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