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Publications about 'Quantitative'
Thesis
  1. Thorsten Mehrtens. Quantitative STEM an indiumhaltigen Gruppe III-V Halbleiternanostrukturen. PhD thesis, Universität Bremen, 2013.


Articles in journal, book chapters
  1. Florian F. Krause, Marco Schowalter, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Effects of instrument imperfections on quantitative scanning transmission electron microscopy. Ultramicroscopy, 161:146-160, 2016. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.10.026] Keyword(s): TEM.


  2. Matthias Lohr, Ralph Schregle, Michael Jetter, Clemens Wächter, Knut Müller-Caspary, Thorsten Mehrtens, Andreas Rosenauer, Ines Pietzonka, Martin Strassburg, and Josef Zweck. Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures. physica status solidi (b), 253:140-144, 2016. ISSN: 1521-3951. [doi:10.1002/pssb.201552288] Keyword(s): DPC, Efficiency droop, EFTEM, electric fields, GaN, HAADF, IMFP, MQW, QCSE, quantification, STEM.


  3. Dan Zhou, Knut Müller-Caspary, Wilfried Sigle, Florian F. Krause, Andreas Rosenauer, and van Aken Peter. Sample tilt effects on atom column position determination in ABF-STEM imaging. Ultramicroscopy, 160:110-117, 2016. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.10.008] Keyword(s): Annular bright-field imaging.


  4. H. Kauko, B. O. Fimland, T. Grieb, A. M. Munshi, K. Müller, A. Rosenauer, and A. T. J. van Helvoort. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires. Journal of Applied Physics, 116(14):144303, 2014. [doi:10.1063/1.4896904]


  5. H. Kauko, T. Grieb, A. M. Munshi, K. Mller, A. Rosenauer, B. O. Fimland, and A. T. J. van Helvoort. The Outward Diffusion of Sb during Nanowire Growth Studied by Quantitative High-Angle Annular Dark Field Scanning Transmission Electron Microscopy. Microscopy and Microanalysis, 20:186-187, 8 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614002657]


  6. Duggi V. Sridhara Rao, Ramachandran Sankarasubramanian, Kuttanellore Muraleedharan, Thorsten Mehrtens, Andreas Rosenauer, and Dipankar Banerjee. Quantitative Strain and Compositional Studies of InGaAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques. Microscopy and Microanalysis, 20:1262-1270, 8 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614000762]


  7. Tim Grieb, Knut Müller, Rafael Fritz, Vincenzo Grillo, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Quantitative chemical evaluation of dilute GaNAs using ADF STEM: Avoiding surface strain induced artifacts. Ultramicroscopy, 129(0):1-9, 2013. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2013.02.006] Keyword(s): Quantitative.


  8. L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, M. Schowalter, T. Mehrtens, A Rosenauer, and A. Hangleiter. Atomics scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content. Applied Physics Letters, 102:102110, 2013. [doi:10.1063/1.4795623]


  9. H. Kauko, T. Grieb, R. Bjørge, M. Schowalter, A.M. Munshi, H. Weman, A. Rosenauer, and A.T.J. van Helvoort. Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM. Micron, 44(0):254-260, 2013. ISSN: 0968-4328. [WWW] [doi:10.1016/j.micron.2012.07.002] Keyword(s): HAADF-STEM.


  10. M Tewes, F F Krause, K Müller, P Potapov, M Schowalter, T Mehrtens, and A Rosenauer. Quantitative Composition Evaluation from HAADF-STEM in GeSi/Si Heterostructures. Journal of Physics: Conference Series, 471(1):012011, 2013. [WWW]


  11. Thorsten Mehrtens, Stephanie Bley, Parlapalli Venkata Satyam, and Andreas Rosenauer. Optimization of the preparation of GaN-based specimens with low-energy ion milling for (S)TEM. Micron, 43(8):902-909, 2012. [WWW] Keyword(s): Scanning transmission electron microscopy, Focused ion beam, Argon ion milling, Low-energy ion milling, Stopping and range of ions in matter.


  12. W. Van den Broek, A. Rosenauer, B. Goris, G.T. Martinez, S. Bals, S. Van Aert, and D. Van Dyck. Correction of non-linear thickness effects in HAADF STEM electron tomography. Ultramicroscopy, 116(0):8-12, 2012. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2012.03.005] Keyword(s): HAADF STEM tomography.


  13. J. K. Dash, A. Rath, R. R. Juluri, P. Santhana Raman, K. Müller, A. Rosenauer, and P. V. Satyam. DC heating induced shape transformation of Ge structures on ultra clean Si (5 5 12) surfaces. Journal of Physics: Condensed matter, 23:135002, 2011.


  14. Vincenco Grillo, Knut Müller, Frank Glas, Kerstin Volz, and Andreas Rosenauer. Toward Simultaneous Assessment of In and N in InGaAsN Alloys by Quantitative STEM-ADF Imaging. Microscopy and Microanalysis, 17:1862-1863, 7 2011. ISSN: 1435-8115. [WWW] [doi:10.1017/S143192761101018X]


  15. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Parlapalli Venkata Satyam, Stephanie Bley, Christian Tessarek, Detlef Hommel, Katrin Sebald, Moritz Seyfried, Jürgen Gutowski, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Composition mapping in InGaN by scanning transmission electron microscopy. Ultramicroscopy, 111:1316-1327, 2011. ISSN: 0304-3991. [WWW] Keyword(s): Quantitative STEM, Composition determination, Multislice simulation, Frozen lattice simulation.


  16. Th. Schmidt, M. Siebert, J. I. Flege, S. Figge, S. Gangopadhyay, A. Pretorius, T.-L. Lee, J. Zegenhagen, L. Gregoratti, A. Barinov, A. Rosenauer, D. Hommel, and J. Falta. Mg and Si dopant incorporation and segregation in GaN. physica status solidi (b), 248(8):1810-1821, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201046531] Keyword(s): defects, dopants, photoelectron microscopy, segregation, X-ray standing waves.


  17. Andreas Rosenauer, Katharina Gries, Knut Müller, Marco Schowalter, Angelika Pretorius, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Measurement of composition profiles in III-nitrides by quantitative scanning transmission electron microscopy. Journal of Physics: Conference Series, 209(1):012009, 2010. [WWW] [doi:10.1088/1742-6596/209/1/012009]


  18. Andreas Rosenauer, Katharina Gries, Knut Müller, Angelika Pretorius, Marco Schowalter, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Measurement of specimen thickness and composition in AlGaN/GaN using high-angle annular dark field images. Ultramicroscopy, 109(9):1171-1182, 2009. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2009.05.003] Keyword(s): Quantitative STEM Z-contrast imaging.


  19. Th. Schmidt, M. Siebert, A. Pretorius, S. Gangopadhyay, S. Figge, J.I. Flege, L. Gregoratti, A. Barinov, D. Hommel, and J. Falta. Spectro-microscopy of Si doped GaN films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 246(1):79-84, 2006. Note: Synchrotron Radiation and Materials Science Proceedings of the E-MRS 2005 Symposium O on Synchrotron Radiation and Materials Science E-MRS 2005 Symposium O. ISSN: 0168-583X. [WWW] [doi:10.1016/j.nimb.2005.12.018] Keyword(s): Photoemission microscopy.


  20. E. Piscopiello, A. Rosenauer, A. Passaseo, E. H. Montoya Rossi, and G. Van Tendeloo. Segregation in In(x)Ga(1-x)As/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition. Philosophical Magazine, 85(32):3857-3870, 2005. [doi:10.1080/147830500269402]


  21. R. Otto, H. Kirmse, I. Häusler, W. Neumann, A. Rosenauer, D. Bimberg, and L. Muller-Kirsch. Determination of composition and strain field of a III/V quaternary quantum dot system. Applied Physics Letters, 85(21):4908-4910, 2004. ISSN: 0003-6951. [doi:10.1063/1.1823602] Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, internal stresses, nucleation, semiconductor quantum dots, transmission electron microscopy, 6835Gy, 6837Lp, 6865Hb.


  22. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668-1683, 2003. ISSN: 1610-1642. [doi:10.1002/pssc.200303129] Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.


  23. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 83(15):3123-3125, October 2003. Keyword(s): growth, GaSb, Ga, Sb, GaAs, Ga, As, quantum wells, quantum well,.


  24. V. Potin, A. Rosenauer, D. Gerthsen, B. Kuhn, and F. Scholz. Comparison of the Morphology and In Distribution of Capped and Uncapped InGaN Layers by Transmission Electron Microscopy. physica status solidi (b), 234(3):947-951, 2002. ISSN: 1521-3951. [doi:10.1002/1521-3951(200212)234:3<947::AID-PSSB947>3.0.CO;2-P] Keyword(s): 68.37.Lp, 68.55.Nq, 68.65.Fg, 81.05.Ea.


  25. S. Kret, P. Ruterana, A. Rosenauer, and D. Gerthsen. Extracting Quantitative Information from High Resolution Electron Microscopy. physica status solidi (b), 227(1):247-295, 2001. ISSN: 1521-3951. [doi:10.1002/1521-3951(200109)227:1<247::AID-PSSB247>3.0.CO;2-F] Keyword(s): 68.35.Dv, 68.37.Lp, 68.55.Nq, 68.65.-k, S7.12, S7.14, S8.13.


  26. Stephan Kaiser, Herbert Preis, Wolfgang Gebhardt, Oliver Ambacher, Helmut Angerer, Martin Stutzmann, Andreas Rosenauer, and Dagmar Gerthsen. Quantitative Transmission Electron Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al$_{ extbf{2}}$O$_{ extbf{3}}$(0001). Japanese Journal of Applied Physics, 37(Part 1, No. 1):84-89, 1998. [WWW] [doi:10.1143/JJAP.37.84]


Conference articles
  1. Florian F. Krause, Marco Schowalter, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Measurement of Diffraction Pattern Distortions for Quantitative STEM (Poster). In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.


  2. Knut Müller-Caspary, Thorsten Mehrtens, Marco Schowalter, Tim Grieb, Andreas Rosenauer, Florian F. Krause, Christoph Mahr, and Pavel Potapov. ImageEval. A software for the processing, evaluation and acquisition of (S)TEM images. In European Microscopy Congress 2016, Lyon (F), [Poster IM03-286], 2016. [doi:10.1002/EMC2016.0677]


  3. Knut Müller-Caspary, Andreas Oelsner, and Pavel Potapov. STEM Strain Measurement From a Stream of Diffraction Patterns Recorded on a Pixel-Free Delay-Line Detector. In Microscopy and Microanalysis 2016, Columbus (OH/USA), [Poster], July 24-28th 2016.


  4. Knut Müller-Caspary, Andreas Oelsner, Pavel Potapov, and Thomas Schmidt. Analysis of strain and composition in GeSi/Si heterostructures by electron microscopy. In European Microscopy Congress 2016, Lyon (F), [Talk MS03-OP239], 2016. [doi:10.1002/EMC2016.0311]


  5. A. Rosenauer, K. Müller-Caspary, M. Schowalter, T. Grieb, F. F. Krause, T. Mehrtens, A. Beche, J. Verbeeck, V. Galioit, J. Zweck, Stefan Löffler, and Peter Schattschneider. Quantitative STEM - From composition to atomic electric fields (Invited Talk). In Electron Microscopy and Analysis Group Annual Conference (EMAG 2016), Durham (UK), 2016.


  6. Andreas Rosenauer, Knut Müller-Caspary, Marco Schowalter, Tim Grieb, Florian F. Krause, Thorsten Mehrtens, Armand Beche, Johan Verbeeck, Josef Zweck, Stefan Löffler, Peter Schattschneider, Marcus Müller, Peter Veit, Sebastian Metzner, Frank Bertram, Tilman Schimpke, Martin Strassburg, and Rafal Dunin-Borkowski. Quantitative STEM -- From composition to atomic electric fields [Invited Talk]. In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.


  7. M. Schowalter, F. F. Krause, T. Grieb, K. Müller-Caspary, T. Mehrtens, and A. Rosenauer. Effects of instrument imperfections on quantitative scanning transmission electron Microscopy (Poster). In Electron Microscopy and Analysis Group Annual Conference (EMAG 2016), Durham (UK), 2016.


  8. Dan Zhou, Knut Müller-Caspary, Wilfried Sigle, Florian F. Krause, Andreas Rosenauer, and Peter van Aken. Sample tilt effects on atom column position determination in ABF-STEM imaging. In Microscopy and Microanalysis Conference M&M 2016, Columbus (Ohio, USA), session A15.1, [Talk 19], July 24-28th 2016.


  9. T. Grieb, D. Carvalho, K. Müller-Caspary, M. Schowalter, C. Mahr, A. Beyer, A. Hyra, T. Ben, F. M. Morales, R. Garcia, K. Volz, B. Daudin, and A. Rosenauer. Quantitative nano-beam electron diffraction: Measuring strain and electric fields. In Microscopy Conference MC 2015, Göttingen (D), Session IM 2 [Talk], September 6-11th 2015.


  10. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. A quantum mechanical approach to electron picodiffraction reveals atomic electric fields. In Materials Research Society Spring Meeting 2015 (MRS 2015), San Francisco (USA) [Talk], volume Symposium ZZ, Talk 2.02, 2015.


  11. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields. In Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK) [Talk], volume Session 4b (Wed, April 1st), 2015.


  12. Knut Müller-Caspary, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Oliver Oppermann, Tim Grieb, Andreas Oelsner, Pavel Potapov, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields. In Frontiers of Electron Microscopy in Materials Science (FEMMS) 2015, Lake Tahoe (CA/USA), [Invited Talk], September 13-18th 2015.


  13. A. Rosenauer, K. Müller-Caspary, M. Schowalter, T. Grieb, F. F. Krause, and T. Mehrtens. Analysis of composition and strain in semiconductor nanostructures by quantitative STEM using HAADF intensity, angular multi-range analysis and imaging STEM. In Microscopy Conference MC 2015, Göttingen (D), Session MS 2 [Invited Talk], September 6-11th 2015.


  14. A. Rosenauer, K. Müller-Caspary, M. Schowalter, T. Grieb, F.F. Krause, T. Mehrtens, A. Béché, J. Verbeeck, V. Galioit, J. Zweck, Stefan Löffler, and Peter Schattschneider. Quantitative STEM. In Proceedings of the International Workshop on Advanced and In-situ Microscopies of Functional Nanomaterials and Devices 2015 (IAMNANO 2015) [Invited Talk], Hamburg (D), 2015.


  15. Marco Schowalter, Florian F. Krause, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Effects of Instrument Imperfections on Quantitative Scanning Transmission Electron Microscopy (Poster. In Proceedings of the Microscopy Conference 2015 (MC 2015), Göttingen (D), September 6-11th 2015.


  16. M. Schowalter, A. Rosenauer, K. Müller-Caspary, T. Grieb, and T. Mehrtens. Quantitative STEM. In EAgLE workshop on high-resolution transmission electron microscopy - from sample preparation to interpretation, 21.-25. September 2015, Warsaw, Poland (invited talk), 2015.


  17. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Moritz Tewes, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Pyuck-Pa Choi, Dierk Raabe, and Pavel Potapov. Measurement of Composition with Quantitative STEM. In EMSI-2014, Delhi (India) [Invited Talk], 2014.


  18. Tim Grieb, Knut Müller, Emanuel Cadel, Rafael Fritz, Nils Neugebohrn, Etienne Talbot, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Chemical composition analysis of dilute GaNAs and InGaNAs by high-angle annular dark field STEM. In International Conference on Electron Microscopy and XXIV Annual Meeting of the Electron Microscope Society of India (EMSI) 2013, Kolkata (India) [Talk], 2013.


  19. A. Rosenauer, K. Müller, T. Mehrtens, M. Schowalter, A. Würfel, T. Aschenbrenner, C. Kruse, D. Hommel, L. Hoffmann, A. Hangleiter, Pyuck-Pa Choi, and D. Raabe. Quantitative Methods in TEM and STEM. In , 2013.


  20. Moritz Tewes, Florian Krause, Knut Müller, Pavel Potapov, Marco Schowalter, Thorsten Mehrtens, and Andreas Rosenauer. Quantitative Composition Evaluation from HAADF-STEM in GeSi/Si Heterostructures. In Microscopy of Semiconducting Materials 2013 (MSM XVIII),Oxford (UK) [Talk], 2013.


  21. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A method to avoid strain field induced artifacts in 2D chemical mapping of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis [Talk 595], volume 18, pages 1028-1029, 2012. [doi:10.1017/S143192761200699X]


  22. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Alexander Würfel, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Lars Hoffmann, Andreas Hangleiter, S. A. Gerstl, Pyuck-Pa Choi, and Dirk Raabe. Measurement of composition and strain in InGaN quantum dots by STEM [Plenary talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, EMSI2012, Bengaluru (Indien), July 4, 2012 [invited talk], pages 25, 2012.


  23. R. Fritz, A. Beyer, W. Stolz, O. Rubel, T. Grieb, K. Müller, M. Schowalter, A. Rosenauer, I. Häusler, A. Mogilatenko, H. Kirmse, W. Neumann, and K. Volz. HAADF-STEM in a JEOL 2200FS for quantitative analysis of composition in compound III/V semiconductor materials. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel), volume 1: Instrumentation and Methods, pages IM2.P130, 2011. DGE - German Society for Electron Microscopy.


  24. Rafael Fritz, Andreas Beyer, Wolfgang Stolz, Kerstin Volz, Knut Müller, Marco Schowalter, Andreas Rosenauer, Ines Häusler, Anna Mogilatenko, Holm Kirmse, and Wolfgang Neumann. Quantitative analysis of chemical composition using HAADF -STEM in a JEOL 2200FS. In Microscopy of semiconducting materials, Cambridge (UK) [Talk], 2011.


  25. G.T. Martinez, S. Van Aert, J. Verbeeck, S. Bals, and A. Rosenauer. Quantitative interface characterization using model-based HAADF STEM. In poster IM2.P116 MC 2011, Kiel, Germany [poster], 2011.


  26. Andreas Rosenauer. Composition mapping in InGaN with Quantitative STEM and comparison with atom probe measurements. In Invitied talk B2.1 ICNS 9 Glasgow, U.K. 2011 [invited talk], 2011.


  27. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Stephanie Bley, Parlapalli Vencata Satyam, Christian Tessarek, Detlef Hommel, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Quantitative STEM: Composition mapping in InGaN. In DPG Frühjahrstagung, Dresden (Germany) [Invited talk], 2011.


  28. A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, P. V. Satyam, S. Bley, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, J. Gutowski, S. S. A. Gerstl, P. P. Choi, and D. Raabe. Composition mapping in InGaN with quantitative STEM Z-contrast imaging. In ICNS Glasgow 2011 [Invited talk], 2011.


  29. M. Schowalter, K. Müller, and A. Rosenauer. Density Functional Theory simulations for quantitative transmission electron microscopy. In CECAM-HQ-EPFL workshop 2011, Lausanne, Switzerland [invited talk], 2011.


  30. T. Volkenandt, E. Müller, T. Mehrtens, A. Rosenauer, and D. Gerthsen. Quantitative analysis of InGaN thin layers by scanning transmission electron microscopy at low electron energies. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel, Germany) [poster], volume 1: Instrumentation and Methods, pages IM2.P114, 2011.


  31. K. Volz, R. Fritz, A. Beyer, W. Stolz, K. Müller, M. Schowalter, A. Rosenauer, I. Haeusler, A. Mogilatenko, H. Kirmse, and W. Neumann. Quantitative analysis of chemical composition using HAADF-STEM in a JEOL 2200FS. In talk D11 MSM 2011 Cambridge, U.K. [talk], 2011.


  32. Kristian Frank, Marco Schowalter, Andreas Rosenauer, Wojciech Pacuski, Carsten Kruse, and Detlef Hommel. Quantitative Untersuchung von ZnTe-basierten optoelektronischen Heterostrukturen mittels Transmissionselektronenmikroskopie. In DPG Frühjahrstagung in Regensburg, 2010.


  33. Rafael Fritz, Andreas Beyer, Oleg Rubel, Wolfgang Stolz, Kerstin Volz, Knut Müller, Marco Schowalter, Andreas Rosenauer, Ines Häusler, Anna Mogilatenko, Holm Kirmse, and Wolfgang Neumann. Quantitative analysis of chemical composition in Ga(AsP)-heterostructures using HAADF-STEM in a JEOL 2200FS. In International Microscopy Congress (IMC17) Rio de Janeiro (Brazil) [Poster presentation], 2010.


  34. Claas Gloistein, Knut Müller, Marco Schowalter, Andreas Rosenauer, and Jacob Jansen. Computation and measurement of atomic mean square displacements for quantitative evaluation of high angle annular dark field images. In International Conference on Advances in Electron Microscopy and Related Techniques/XXXI Annual Meeting of EMSI, Mumbai (India) [Invited talk], 2010.


  35. A. Rosenauer, K. Gries, K. Müller, M. Schowalter, A. Pretorius, A. Avramescu, K. Engl, and S. Lütgen. Measurement of Composition Profiles in III-Nitrides by Quantitative Scanning Transmission Electron Microscopy. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012009, 2010.


  36. Andreas Rosenauer, Knut Müller, Katharina Gries, Marco Schowalter, Angelika Pretorius, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Towards Quantitative Scanning Transmission Electron Microscopy: Measurement of Composition in III Nitrides. In International Conference on Advances in Electron Microscopy and Related Techniques/XXXI Annual Meeting of EMSI, Mumbai (India) [Invited talk], 2010.


  37. Thorsten Mehrtens, Knut Müller, Marco Schowalter, Nils Neugebohrn, Andreas Rosenauer, Dongzhi Hu, and Daniel Schaadt. Towards a quantitative concentration analysis in InGaAs-heterostructures using HAADF-STEM. In G. Kothleitner and M. Leisch, editors, MC2009, Graz (Austria) Vol. 1: Instrumentation and Methodology, pages 219-220, 2009.


  38. A. Rosenauer, M. Schowalter, A. Pretorius, A. Avramescu, K. Engl, and S. Lutgen. Quantitative measurement of composition profiles at interfaces in semiconductor nanostructures by HRSTEM. In PSI2009, Puri, India, February 2009, 2009.


  39. Andreas Rosenauer, Marco Schowalter, Knut Müller, John Titantah, and Dirk Lamoen. Ab-inito Methods as Tools for Quantitative High-Resolution Transmission Electron Microscopy. In MRS Fall Meeting, Boston (USA) [Invited talk], 2007.


  40. A. Rosenauer, M. Schowalter, K. Müller, J. Titantah, D. Lamoen, P. Kruse, and D. Gerthsen. Ab-inito Methods as Tools for Quantitative High-Resolution Transmission Electron Microscopy. In MRS Autumn Meeting 2008 Symposium C: Quantitative Electron Microscopy for Materials Science SESSION C21: HRTEM and Quantitative Comparison of Experiment and Theory II, 2007.


  41. M. Schowalter, A. Rosenauer, D. Litvinov, and D. Gerthsen. Investigation of segregation by quantitative transmission electron microscopy. In Optica Applicata 36 (2006) 297-309, 2006.


  42. D. Litvinov, D. Gerthsen, A. Rosenauer, P. Gilet, and L. Grenouillet. Measurement of the nigrogen-concentration profile in GaInN/GaAs heterostructures by quantitative high-resolution transmission electron microscopy Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 127-128. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 127-128, 2004.


  43. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative investigation of Sb distribution in GaSb/GaAs heterostructures,. In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003), 2003.


  44. V. Potin, E. Hahn, M. Schowalter, A. Rosenauer, D. Gerthsen, B. Kuhn, and F. Scholz. Quantitative analysis of the In-distribution in InGaN/GaN-heterostructures. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, 2002.


  45. V. Potin, E. Hahn, A. Rosenauer, and D. Gerthsen. Determination of indium composition fluctuation in InGaN/GaN quantum wells by quantitative high resolution electron microscopy. In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Inst. Phys. Conf. Ser. 169, 25-28 Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.


  46. W. Oberst, A. Rosenauer, D. Gerthsen, and A. Förster. Quantitative transmissionselektronenmikroskopische Untersuchung von InGaAs/GaAs-Quantenpunktstrukturen. In DPG Frühjahrstagung, Münster (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1999, Münster, Verhandl. DPG (VI) 34, 1999, 768, 1999.


  47. D. Gerthsen, T. Walther, and A. Rosenauer. Quantitative High-Resolution Electron Microscopy of Semiconductor Heterostructures,. In 9. Japan-Germany Forum on Information Technology, Oita (Japan), 8.-11.11.1994, 1994.


Miscellaneous
  1. Knut Müller. Practice of quantitative STEM [Lecture], January 2014.


  2. Knut Müller. Quantitative analysis of (S)TEM images using the ImageEval software [Tutorial], October 2014.


  3. Knut Müller and Andreas Rosenauer. Quantitative STEM simulation/Evaluation [Tutorial], September 2014.


  4. Moritz Tewes. Quantitative STEM-Untersuchung von Germanium-Silizium-Heterostrukturen (Quantitative STEM investigations of germanium-silicon heterostructures). Master's thesis, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany, February 2013.


  5. Knut Müller. Practice and Application of quantitative STEM [Lecture], March 2013.


  6. Thorsten Mehrtens. Bestimmung von Segregationsprofilen in InGaAs/GaAs-Quantentrögen mittels konventioneller und Rastertransmissionselektronenmikroskopie. Master's thesis, Universität Bremen, 2009.


  7. Nils Neugebohrn. Quantitative Untersuchung der Temperatur- und Dickenabhängigkeit des STEM-Dunkelfeldsignals von Zinkblende-Halbleitern (Quantitative investigation of the temperature and thickness dependence of the STEM dark field signal of zinc blende semiconductors), July 2009.


  8. Knut Müller. Bestimmung von Strukturfaktoren für Galliumarsenid mittels Elektronenbeugung - Entwicklung und Test einer Messmethode (Determination of structure factors for gallium arsenide by electron diffraction - development and test of a measurement method). Diplomarbeit, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany, September 2007.


  9. Knut Müller. Quantitative Analyse von InGaN-Inseln mittels Hochauflösungs-Transmissionselektronenmikroskopie (Quantitative analysis of InGaN-islands by high-resolution transmission electron microscopy), June 2006.



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Last modified: Wed Sep 21 12:45:12 2016
Author: knut.


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