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Publications about 'quantum dots'
Articles in journal, book chapters
  1. P. S. Sokolov, M. Yu. Petrov, T. Mehrtens, K. Müller-Caspary, A. Rosenauer, D. Reuter, and A. D. Wieck. Reconstruction of nuclear quadrupole interaction in (In,Ga)As/GaAs quantum dots observed by transmission electron microscopy. Phys. Rev. B, 93:045301, January 2016. [doi:10.1103/PhysRevB.93.045301]


  2. Elias Goldmann, Matthias Paul, Florian F. Krause, Knut Müller, Jan Kettler, Thorsten Mehrtens, Andreas Rosenauer, Michael Jetter, Peter Michler, and Frank Jahnke. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 micrometers. Applied Physics Letters, 105(15):152102, 2014. [doi:10.1063/1.4898186]


  3. Dongchao Hou, Apurba Dev, Kristian Frank, Andreas Rosenauer, and Tobias Voss. Oxygen-Controlled Photoconductivity in ZnO Nanowires Functionalized with Colloidal CdSe Quantum Dots. The Journal of Physical Chemistry C, 116(36):19604-19610, 2012. [doi:10.1021/jp307235u]


  4. Heiko Dartsch, Christian Tessarek, Timo Aschenbrenner, Stephan Figge, Carsten Kruse, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity. Journal of Crystal Growth, 320(1):28-31, 2011. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2010.12.008] Keyword(s): A1. Electroluminescence.


  5. J. Falta, Th. Schmidt, S. Gangopadhyay, Chr. Schulz, S. Kuhr, N. Berner, J. I. Flege, A. Pretorius, A. Rosenauer, K. Sebald, H. Lohmeyer, J. Gutowski, S. Figge, T. Yamaguchi, and D. Hommel. Cleaning and growth morphology of GaN and InGaN surfaces. physica status solidi (b), 248(8):1800-1809, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201046574] Keyword(s): chemical analysis, scanning tunneling microscopy, quantum dots, X-ray photoemission spectroscopy.


  6. Carsten Kruse, Wojciech Pacuski, Tomasz Jakubczyk, Jakub Kobak, Jan A Gaj, Kristian Frank, Marco Schowalter, Andreas Rosenauer, Matthias Florian, Frank Jahnke, and Detlef Hommel. Monolithic ZnTe-based pillar microcavities containing CdTe quantum dots. Nanotechnology, 22(28):285204, 2011. [WWW]


  7. Angelika Pretorius, Thomas Schmidt, Timo Aschenbrenner, Tomohiro Yamaguchi, Christian Kübel, Knut Müller, Heiko Dartsch, Detlef Hommel, Jens Falta, and Andreas Rosenauer. Microstructural and compositional analyses of GaN based nanostructures. Physica Status Solidi, 248:1822-1836, 2011. [doi:10.1002/pssb.201147175]


  8. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Stephanie Bley, Parlapalli Venkata Satyam, Adrian Avramescu, Karl Engl, and Stephan Lutgen. 2D-composition mapping in InGaN without electron beam induced clustering of indium by STEM HAADF Z-contrast imaging. Journal of Physics: Conference Series, 326(1):012040, 2011. [WWW]


  9. C. Tessarek, S. Figge, T. Aschenbrenner, S. Bley, A. Rosenauer, M. Seyfried, J. Kalden, K. Sebald, J. Gutowski, and D. Hommel. Strong phase separation of strained InGaN layers due to spinodal and binodal decomposition: Formation of stable quantum dots. Phys. Rev. B, 83:115316, March 2011. [doi:10.1103/PhysRevB.83.115316]


  10. E. Roventa, G. Alexe, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigations of spatial correlation of CdSe/ZnSe quantum dot stacks grown by molecular beam epitaxy. Journal of Crystal Growth, 278(1-4):316-319, 2005. Note: 13th International Conference on Molecular Beam Epitaxy. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2005.01.017] Keyword(s): A3. Migration enhanced epitaxy.


  11. Th. Schmidt, E. Roventa, T. Clausen, J. I. Flege, G. Alexe, S. Bernstorff, C. Kübel, A. Rosenauer, D. Hommel, and J. Falta. Ordering mechanism of stacked CdSeZnS(x)Se(1-x) quantum dots: A combined reciprocal-space and real-space approach. Phys. Rev. B, 72:195334, November 2005. [doi:10.1103/PhysRevB.72.195334]


  12. R. Otto, H. Kirmse, I. Häusler, W. Neumann, A. Rosenauer, D. Bimberg, and L. Muller-Kirsch. Determination of composition and strain field of a III/V quaternary quantum dot system. Applied Physics Letters, 85(21):4908-4910, 2004. ISSN: 0003-6951. [doi:10.1063/1.1823602] Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, internal stresses, nucleation, semiconductor quantum dots, transmission electron microscopy, 6835Gy, 6837Lp, 6865Hb.


  13. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546-6552, 2002. ISSN: 0021-8979. [doi:10.1063/1.1516248] Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.


  14. D. Litvinov, A. Rosenauer, D. Gerthsen, H. Preis, K. Fuchs, and S. Bauer. Growth and vertical correlation of CdSe/ZnSe quantum dots. Journal of Applied Physics, 89(7):3695-3699, 2001. ISSN: 0021-8979. [doi:10.1063/1.1352676] Keyword(s): II-VI semiconductors, cadmium compounds, island structure, molecular beam epitaxial growth, reflection high energy electron diffraction, semiconductor epitaxial layers, semiconductor growth, semiconductor quantum dots, transmission electron microscopy, zinc compounds, 6865Hb, 8105Dz, 8107Ta, 8115Hi.


  15. I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, Yu.G. Musikhin, A.P. Kartashova, A.S. Usikov, A.F. Tsatsul’nikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A.C. Plaut, A.A. Hoffmann, and D. Bimberg. Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots. Semiconductors, 34(4):481-487, 2000. ISSN: 1063-7826. [doi:10.1134/1.1188011]


  16. D. Schikora, S. Schwedhelm, D. J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg. Investigations on the Stranski--Krastanow growth of CdSe quantum dots. Applied Physics Letters, 76(4):418-420, 2000. [WWW] [doi:10.1063/1.125773] Keyword(s): semiconductor quantum dots, molecular beam epitaxial growth, self-assembly, island structure, stacking faults, cadmium compounds, II-VI semiconductors, reflection high energy electron diffraction, photoluminescence, monolayers.


  17. M. Strassburg, Th. Deniozou, A. Hoffmann, R. Heitz, U. W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, K. Lischka, and D. Schikora. Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structures. Applied Physics Letters, 76(6):685-687, 2000. [WWW] [doi:10.1063/1.125861] Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor quantum dots, semiconductor heterojunctions, island structure, transmission electron microscopy, monolayers, photoluminescence.


  18. K.G. Chinyama, K.P. O'Donnell, A. Rosenauer, and D. Gerthsen. Morphology of ultrathin CdSe quantum confinement layers in ZnSe matrices. Journal of Crystal Growth, 203(3):362-370, 1999. ISSN: 0022-0248. [WWW] [doi:10.1016/S0022-0248(99)00099-8] Keyword(s): Morphology.


  19. I. L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots. Phys. Rev. B, 60:8695-8703, September 1999. [doi:10.1103/PhysRevB.60.8695]


  20. A.F. Tsatsul’Nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maximov, A.Yu Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, P.S. Kop’Ev, Zh.I. Alferov, I.A. Kozin, M.V. Belousov, I.P. Soshnikov, P. Werner, D. Litvinov, U. Fischer, A. Rosenauer, and D. Gerthsen. Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition. Journal of Electronic Materials, 28(5):537-541, 1999. ISSN: 0361-5235. [doi:10.1007/s11664-999-0108-9] Keyword(s): Lasing, quantum dots, submonolayer, vertical correlation.


  21. M. Strassburg, V. Kutzer, U. W. Pohl, A. Hoffmann, I. Broser, N. N. Ledentsov, D. Bimberg, A. Rosenauer, U. Fischer, D. Gerthsen, I. L. Krestnikov, M. V. Maximov, P. S. Kop'ev, and Zh.I. Alferov. Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix. Applied Physics Letters, 72(8):942-944, 1998. [WWW] [doi:10.1063/1.120880] Keyword(s): cadmium compounds, zinc compounds, II-VI semiconductors, semiconductor quantum dots, island structure, monolayers, refractive index, transmission electron microscopy, biexcitons, excitons, phonon spectra, quantum well lasers, stimulated emission.


  22. U. Woggon, W. Langbein, J. M. Hvam, A. Rosenauer, T. Remmele, and D. Gerthsen. Electron microscopic and optical investigations of the indium distribution in GaAs capped In(x)Ga(1-x)As islands. Applied Physics Letters, 71(3):377-379, 1997. [WWW] [doi:10.1063/1.119542] Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, buried layers, transmission electron microscopy, photoluminescence, molecular beam epitaxial growth, semiconductor growth, semiconductor epitaxial layers.


Conference articles
  1. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Lars Hoffmann, Andreas Hangleiter, Pyuck-Pa Choi, and Dierk Raabe. Measurement of the indium concentration in high-indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. In SPIE Photonics West OPTO, San Francisco (USA) [Invited Talk], 2014.


  2. S. Figge, T. Aschenbrenner, K. Morosov, E. Zakizadeh, C. Kruse, A Rosenauer, T. Mehrtens, S. Kremling, S. Höfling, L. Worschech, L. Forchel, and D. Hommel. Enhanced carrier confinement in InGaN quantum dots. In International Workshop on Nitride Semiconductors 2012 [Talk], 2012.


  3. A. Rosenauer, K. Müller, T. Mehrtens, M. Schowalter, T. Aschenbrenner, C. Kruse, D. Hommel, K. Sebald, and J. Gutowski. TEM investigation of InGaN quantum dots. In First German-Korean Symposium on Nano-optics and Nano-technology, Hanse-Wissenschaftskolleg, Delmenhorst, (Germany) December 14, 2012, [Invited talk], 2012.


  4. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Alexander Würfel, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Lars Hoffmann, Andreas Hangleiter, S. A. Gerstl, Pyuck-Pa Choi, and Dirk Raabe. Measurement of composition and strain in InGaN quantum dots by STEM [Plenary talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, EMSI2012, Bengaluru (Indien), July 4, 2012 [invited talk], pages 25, 2012.


  5. Heiko Dartsch, Christian Tessarek, Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. Electroluminescence from InGaN quantum dots in a monolithically grown GaN/AlInN cavity. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.


  6. S. Figge, H. Dartsch, C. Tessarek, T. Aschenbrenner, C. Kruse, D. Hommel, K. Sebald, M. Seyfried, J. Kalden, J. Gutowski, M. Schowalter, K. Müller, A. Rosenauer, M. Florian, and F. Jahnke. Enhancing the Collection-Efficiency of InGaN Quantum Dots in Single Photon Emitters. In poster PC1.17 ICNS 9 Glasgow, U.K. 2011, [Poster], volume PC1.17, 2011.


  7. C. Kruse, W. Pacuski, T. Jakubczyk, M. Florian, K. Frank, T. Kazimierczuk, A. Golnik, J. A. Gaj, F. Jahnke, A. Rosenauer, and D. Hommel. High-quality ZnTe-based micropillars containing CdTe quantum dots. In ICPS 2010, 2010.


  8. Andreas Rosenauer, Thorsten Mehrtens, Stephanie Bley, Knut Müller, Katharina Gries, Marco Schowalter, Christian Tessarek, Detlef Hommel, Kathrin Sebald, Moritz Seyfried, and Jürgen Gutowski. Composition mapping in InGaN quantum wells and quantum dots using high resolution STEM imaging. In International Microscopy Congress (IMC17), Rio de Janeiro (Brazil) [Poster presentation], 2010.


  9. K. Chinyama, K. O'Donnell, A. Rosenauer, and E. Kurtz. Composition of self-assembled quantum dots in CdSe-ZnSe quantum well structures. In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.


  10. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Atomic-scale composition analysis of semiconductor quantum dots by transmission electron microscopy,. In 7th International Symposium on Advanced Physical Fields „Fabrication and Characterization of Nanostructured Materialsâ€, 12-15.11.2001 Tsukuba, 2001.


  11. N. N. Ledentsov, I. L. Krestnikov, M. Strassburg, R. Engelhardt, S. Rodt, R. Heitz, U.W. Pohl, A Hoffmann, D. Bimberg, A. V. Sakharov, V. Lundin, A. S. Usikov, Z. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Quantum dots formed by ultrathin insertions in wide-gap matrices,. In Third International Workshop on Molecular Beam Epitaxy- Growth Physics and Technology (MBE-GPT). - 23-28 May 1999. Thin Solid Films 367, 40-7, 2000.


  12. D. Schikora, S. Schwedhelm, I. Kudryashov, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg. Investigations on the formation kinetics of CdSe quantum dots,. In II-VI Compounds 1999. Ninth International Conference, 1-5 Nov. 1999 J. Cryst. Growth 214-215, 698-702, 2000.


  13. I. L. Krestnikov, M. Strassburg, M. Caesar, V. Shchukin, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, V.G. Malyshkin, P.S. Kop'ev, Z. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Vertical arrangement and wavefunction control in structures with 2D quantum dots (invited). In Proceedings ICPS24, Jerusalem, August 2-7, 1998, D. Gershoni, Ed. (World Scientific, 1999), pp. 70-77, 1999.


  14. M. Strassburg, R. Engelhardt, R. Heitz, U.W. Pohl, S. Rodt, V. Turck, A. Hoffmann, D. Bimberg, I. L. Krestnikov, N. N. Ledentsov, Z. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen. Quantum dots formed by ultrathin CdSe-ZnSe insertions. In Proceedings of the 7th International Symposium Nanostructures: Physics and Technology, Ioffe Institute, St. Petersburg, Russia, June 14-18, 1999, p.13-19, 1999.



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