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Publications about 'quantum-well'
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Articles in journal, book chapters
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Yung-Chen Cheng,
Cheng-Ming Wu,
C. C. Yang,
Gang Alan Li,
Andreas Rosenauer,
Kung-Jen Ma,
Shih-Chen Shi,
and L. C. Chen.
Effects of interfacial layers in InGaN/GaN quantum-well structures on their optical and nanostructural properties.
Journal of Applied Physics,
98(1):014317,
2005.
[WWW]
[doi:10.1063/1.1978988]
Keyword(s): indium compounds,
gallium compounds,
III-V semiconductors,
wide band gap semiconductors,
semiconductor quantum wells,
nanostructured materials,
photoluminescence,
electroluminescence,
Stark effect.
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Yung-Chen Cheng,
En-Chiang Lin,
Cheng-Ming Wu,
C.C. Yang,
Jer-Ren Yang,
Andreas Rosenauer,
Kung-Jen Ma,
Shih-Chen Shi,
L.C. Chen,
Chang-Chi Pan,
and Jen-Inn Chyi.
Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions.
Applied Physics Letters,
84(14):2506-2508,
2004.
ISSN: 0003-6951.
[doi:10.1063/1.1690872]
Keyword(s): III-V semiconductors,
gallium compounds,
indium compounds,
photoluminescence,
quantum confined Stark effect,
semiconductor doping,
semiconductor quantum wells,
silicon,
wide band gap semiconductors,
6172Vv,
6865Fg,
7855Cr,
7867De.
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Yung-Chen Cheng,
Cheng-Ming Wu,
Meng-Kuo Chen,
C. C. Yang,
Zhe-Chuan Feng,
Gang Alan Li,
Jer-Ren Yang,
Andreas Rosenauer,
and Kung-Je Ma.
Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers.
Applied Physics Letters,
84(26):5422-5424,
2004.
[WWW]
[doi:10.1063/1.1767603]
Keyword(s): indium compounds,
gallium compounds,
III-V semiconductors,
wide band gap semiconductors,
semiconductor quantum wells,
photoluminescence,
electroluminescence,
monolayers.
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M. Schowalter,
A. Rosenauer,
D. Gerthsen,
M. Grau,
and M.-C. Amann.
Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy.
Appl. Phys. Lett.,
83(15):3123-3125,
October 2003.
Keyword(s): growth,
GaSb,
Ga,
Sb,
GaAs,
Ga,
As,
quantum wells,
quantum well,.
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E. Hahn,
A. Rosenauer,
D. Gerthsen,
J. Off,
V. Perez-Solorzano,
M. Jetter,
and F. Scholz.
In-Redistribution in a GaInN Quantum Well upon Thermal Annealing.
physica status solidi (b),
234(3):738-741,
2002.
ISSN: 1521-3951.
[doi:10.1002/1521-3951(200212)234:3<738::AID-PSSB738>3.0.CO;2-X]
Keyword(s): 64.75.+g,
66.30.Xj,
68.37.Lp,
78.55.Cr,
81.05.Ea.
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M. Schowalter,
A. Rosenauer,
D. Gerthsen,
M. Arzberger,
M. Bichler,
and G. Abstreiter.
Investigation of In segregation in InAs/AlAs quantum-well structures.
Appl. Phys. Lett.,
79(26):4426-4428,
December 2001.
Keyword(s): segregation,
InAs,
In,
As,
InAs/AlAs,
AlAs,
Al,
As,
quantum-well.
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D. Luerssen,
R. Bleher,
H. Richter,
Th. Schimmel,
H. Kalt,
A. Rosenauer,
D. Litvinov,
A. Kamilli,
D. Gerthsen,
K. Ohkawa,
B. Jobst,
and D. Hommel.
Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures.
Applied Physics Letters,
75(25):3944-3946,
1999.
[WWW]
[doi:10.1063/1.125502]
Keyword(s): zinc compounds,
magnesium compounds,
II-VI semiconductors,
wide band gap semiconductors,
semiconductor quantum wells,
stacking faults,
defect states,
interface states,
interface structure,
photoluminescence,
atomic force microscopy,
transmission electron microscopy,
excitons.
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M. Hetterich,
M. Grün,
W. Petri,
C. Märkle,
C. Klingshirn,
A. Wurl,
U. Fischer,
A. Rosenauer,
and D. Gerthsen.
Elastic and plastic strain relaxation in ultrathin CdS/ZnS quantum-well structures grown by molecular-beam epitaxy.
Phys. Rev. B,
56:12369-12374,
November 1997.
[doi:10.1103/PhysRevB.56.12369]
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Last modified: Wed Sep 21 12:45:12 2016
Author: knut.
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