1. T. Aschenbrenner, M. Schowalter, T. Mehrtens, K. Müller-Caspary, M. Fikry, D. Heinz, I. Tischer, M. Madel, K. Thonke, D. Hommel, F. Scholz, and A.ahr Rosenauer. Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy. Journal of Applied Physics, 119(17), 2016. [doi:10.1063/1.4948385]



2. Matthias Lohr, Ralph Schregle, Michael Jetter, Clemens Wächter, Knut Müller-Caspary, Thorsten Mehrtens, Andreas Rosenauer, Ines Pietzonka, Martin Strassburg, and Josef Zweck. Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures. physica status solidi (b), 253:140-144, 2016. ISSN: 1521-3951. [doi:10.1002/pssb.201552288] Keyword(s): DPC, Efficiency droop, EFTEM, electric fields, GaN, HAADF, IMFP, MQW, QCSE, quantification, STEM.



3. U. Rossow, L. Hoffmann, H. Bremers, E.R. Buss, F. Ketzer, T. Langer, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer. Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells. Journal of Crystal Growth, 414(0):49-55, 2015. Note: Proceedings of the Seventeenth International Conference on Metalorganic Vapor Phase Epitaxy. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2014.11.040] Keyword(s): A1. Surface processes.



4. Dominik Heinz, Mohamed Fikry, Timo Aschenbrenner, Marco Schowalter, Tobias Meisch, Manfred Madel, Florian Huber, Matthias Hocker, Manuel Frey, Ingo Tischer, Benjamin Neuschl, Thorsten Mehrtens, Knut Müller, Andreas Rosenauer, Detlef Hommel, Klaus Thonke, and Ferdinand Scholz. GaN tubes with coaxial non- and semipolar GaInN quantum wells. Phys. Status Solidi (c), 11:648-651, 2014.



5. Tim Grieb, Knut Müller, Rafael Fritz, Vincenzo Grillo, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Quantitative chemical evaluation of dilute GaNAs using ADF STEM: Avoiding surface strain induced artifacts. Ultramicroscopy, 129(0):1-9, 2013. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2013.02.006] Keyword(s): Quantitative.



6. L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, M. Schowalter, T. Mehrtens, A Rosenauer, and A. Hangleiter. Atomics scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content. Applied Physics Letters, 102:102110, 2013. [doi:10.1063/1.4795623]



7. T. Mehrtens, M. Schowalter, D. Tytko, P. Choi, D. Raabe, L. Hoffmann, H. Jönen, U. Rossow, A. Hangleiter, and A. Rosenauer. Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. Applied Physics Letters, 102(13):132112, 2013. [WWW] [doi:10.1063/1.4799382] Keyword(s): gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, quantum well lasers, scanning-transmission electron microscopy, semiconductor quantum wells, wide band gap semiconductors.



8. T Mehrtens, M Schowalter, D Tytko, P Choi, D Raabe, L Hoffmann, H Jönen, U Rossow, A Hangleiter, and A Rosenauer. Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-contrast. Journal of Physics: Conference Series, 471(1):012009, 2013. [WWW] [doi:10.1088/1742-6596/471/1/012009]



9. U. Rossow, A. Kruse, H. Jönen, L. Hoffmann, F. Ketzer, T. Langer, R. Buss, H. Bremers, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer. Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region. Journal of Crystal Growth, 370(0):105-108, 2013. ISSN: 0022-0248. [WWW] Keyword(s): A3. Low press. metalorganic vapor phase epitaxy, A3. Quantum wells, A3. Laser epitaxy, B1. Nitrides, B2. Semiconducting III-V materials.



10. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging and improved STEM-HAADF strain state analysis. Ultramicroscopy, 117:15-23, 2012. [WWW] [doi:10.1016/j.ultramic.2012.03.014]



11. K. Sebald, M. Seyfried, S. Klembt, S. Bley, A. Rosenauer, D. Hommel, and C. Kruse. Strong coupling in monolithic microcavities with ZnSe quantum wells. Applied Physics Letters, 100(16):161104-161104-4, 2012. ISSN: 0003-6951. [doi:10.1063/1.4704188] Keyword(s): microcavity lasers, quantum well lasers, scanning electron microscopy, transmission electron microscopy, zinc compounds, 4255Px, 4255Sa.



12. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging. Journal of Physics: Conference Series, 326(1):012033, 2011. [WWW]



13. Robert Imlau, Knut Müller, Oleg Rubel, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing. Journal of Physics: Conference Series, 326(1):012038, 2011. [WWW]



14. G Kunert, W Freund, T Aschenbrenner, C Kruse, S Figge, M Schowalter, A Rosenauer, J Kalden, K Sebald, J Gutowski, M Feneberg, I Tischer, K Fujan, K Thonke, and D Hommel. Light-emitting diode based on mask-Â and catalyst-free grown N-polar GaN nanorods. Nanotechnology, 22(26):265202, 2011. [WWW]



15. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S A Gerstl, Pyuck-Pa Choi, Dierk Raabe, and Andreas Rosenauer. A (S)TEM and atom probe tomography study of InGaN. Journal of Physics: Conference Series, 326(1):012029, 2011. ISSN: 1742-6596. [WWW]



16. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Stephanie Bley, Parlapalli Venkata Satyam, Adrian Avramescu, Karl Engl, and Stephan Lutgen. 2D-composition mapping in InGaN without electron beam induced clustering of indium by STEM HAADF Z-contrast imaging. Journal of Physics: Conference Series, 326(1):012040, 2011. [WWW]



17. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga$_{1-x}$In$_x$As/GaAs quantum wells. J. Appl. Phys., 105(8):084310, 2009. [WWW] [doi:10.1063/1.3115407] Keyword(s): arsenic compounds, density functional theory, gallium arsenide, gallium compounds, III-V semiconductors, indium compounds, lattice constants, Monte Carlo methods, nanostructured materials, semiconductor heterojunctions, semiconductor quantum wells.



18. T. Aschenbrenner, S. Figge, M. Schowalter, A. Rosenauer, and D. Hommel. Photoluminescence and structural analysis of a-plane InGaN layers. Journal of Crystal Growth, 310(23):4992-4995, 2008. Note: The Fourteenth International conference on Metalorganic Vapor Phase Epitax The 14th International conference on Metalorganic Vapor Phase Epitax. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2008.08.014] Keyword(s): A1. X-ray diffraction.



19. Abdul Kadir, M.R. Gokhale, Arnab Bhattacharya, Angelika Pretorius, and Andreas Rosenauer. {MOVPE} growth and characterization of InN/GaN single and multi-quantum well structures. Journal of Crystal Growth, 311(1):95-98, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2008.10.056] Keyword(s): A1. Transmission electron microscopy.



20. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Size effects and strain state of Ga(1-x)In(x)As/GaAs multiple quantum wells: Monte Carlo study. Phys. Rev. B, 78:165326, October 2008. [doi:10.1103/PhysRevB.78.165326]



21. K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells. J. Appl. Phys., 102(8):083504, 2007. [WWW] [doi:10.1063/1.2794739] Keyword(s): annealing, gallium arsenide, gallium compounds, III-V semiconductors, impurity distribution, indium compounds, photoluminescence, Rutherford backscattering, semiconductor epitaxial layers, semiconductor heterojunctions, semiconductor quantum wells, transmission electron microscopy.



22. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in $In_{x}Ga_{1-{}x}As$. Phys. Rev. B, 74(16):165306, October 2006. [doi:10.1103/PhysRevB.74.165306]



23. M. Schowalter, A. Rosenauer, and D. Gerthsen. Influence of surface segregation on the optical properties of semiconductor quantum wells. Applied Physics Letters, 88(11):111906-111906-3, 2006. ISSN: 0003-6951. [doi:10.1063/1.2184907] Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, photoluminescence, semiconductor quantum wells, surface segregation, 6835Dv, 7855Cr, 7867De.



24. Meng-Ku Chen, Yung-Chen Cheng, Jiun-Yang Chen, Cheng-Ming Wu, C.C. Yang, Kung-Jen Ma, Jer-Ren Yang, and Andreas Rosenauer. Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells. Journal of Crystal Growth, 279(1-2):55-64, 2005. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2005.02.018] Keyword(s): A1. Segregation.



25. Yung-Chen Cheng, Cheng-Ming Wu, C. C. Yang, Gang Alan Li, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, and L. C. Chen. Effects of interfacial layers in InGaN/GaN quantum-well structures on their optical and nanostructural properties. Journal of Applied Physics, 98(1):014317, 2005. [WWW] [doi:10.1063/1.1978988] Keyword(s): indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, nanostructured materials, photoluminescence, electroluminescence, Stark effect.



26. T. Li, E. Hahn, D. Gerthsen, A. Rosenauer, A. Strittmatter, L. Reissmann, and D. Bimberg. Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope. Applied Physics Letters, 86(24):241911, 2005. [WWW] [doi:10.1063/1.1948517] Keyword(s): indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, electron beam effects, transmission electron microscopy, internal stresses.



27. Yung-Chen Cheng, En-Chiang Lin, Cheng-Ming Wu, C.C. Yang, Jer-Ren Yang, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, L.C. Chen, Chang-Chi Pan, and Jen-Inn Chyi. Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions. Applied Physics Letters, 84(14):2506-2508, 2004. ISSN: 0003-6951. [doi:10.1063/1.1690872] Keyword(s): III-V semiconductors, gallium compounds, indium compounds, photoluminescence, quantum confined Stark effect, semiconductor doping, semiconductor quantum wells, silicon, wide band gap semiconductors, 6172Vv, 6865Fg, 7855Cr, 7867De.



28. Yung-Chen Cheng, Cheng-Ming Wu, Meng-Kuo Chen, C. C. Yang, Zhe-Chuan Feng, Gang Alan Li, Jer-Ren Yang, Andreas Rosenauer, and Kung-Je Ma. Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers. Applied Physics Letters, 84(26):5422-5424, 2004. [WWW] [doi:10.1063/1.1767603] Keyword(s): indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum wells, photoluminescence, electroluminescence, monolayers.



29. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Hetterich, A. Grau, Ph. Gilet, and L. Grenouillet. Determination of the nitrogen distribution in InGaNAs/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 85:3743-3745, 2004.



30. V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano, and N. Grandjean. Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy. Journal of Crystal Growth, 262(1-4):145-150, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.10.082] Keyword(s): A1. Metalorganic vapor phase epitaxy.



31. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668-1683, 2003. ISSN: 1610-1642. [doi:10.1002/pssc.200303129] Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.



32. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 83(15):3123-3125, October 2003. Keyword(s): growth, GaSb, Ga, Sb, GaAs, Ga, As, quantum wells, quantum well,.



33. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546-6552, 2002. ISSN: 0021-8979. [doi:10.1063/1.1516248] Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.



34. D. Gerthsen, B. Neubauer, A. Rosenauer, T. Stephan, H. Kalt, O. Schon, and M. Heuken. InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition. Applied Physics Letters, 79(16):2552-2554, 2001. ISSN: 0003-6951. [doi:10.1063/1.1409949] Keyword(s): III-V semiconductors, MOCVD, gallium compounds, indium compounds, lattice constants, photoluminescence, red shift, semiconductor growth, semiconductor quantum wells, spectral line intensity, transmission electron microscopy, wide band gap semiconductors, 6865Fg, 7855Cr, 7867De, 8107St, 8115Gh.



35. E. Kurtz, M. Schmidt, M. Baldauf, S. Wachter, M. Grün, H. Kalt, C. Klingshirn, D. Litvinov, A. Rosenauer, and D. Gerthsen. Suppression of lateral fluctuations in CdSe-based quantum wells. Applied Physics Letters, 79(8):1118-1120, 2001. [WWW] [doi:10.1063/1.1394172] Keyword(s): cadmium compounds, II-VI semiconductors, semiconductor quantum wells, fluctuations, photoluminescence, semiconductor growth, spectral line breadth, molecular beam epitaxial growth.



36. D. Luerssen, R. Bleher, H. Richter, Th. Schimmel, H. Kalt, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, K. Ohkawa, B. Jobst, and D. Hommel. Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures. Applied Physics Letters, 75(25):3944-3946, 1999. [WWW] [doi:10.1063/1.125502] Keyword(s): zinc compounds, magnesium compounds, II-VI semiconductors, wide band gap semiconductors, semiconductor quantum wells, stacking faults, defect states, interface states, interface structure, photoluminescence, atomic force microscopy, transmission electron microscopy, excitons.



37. Marcus J. Kastner, Berthold Hahn, Claus Auchter, Markus Deufel, Andreas Rosenauer, and Wolfgang Gebhardt. Structural characterization and MOVPE growth of ZnCdSe and ZnSSe layers, quantum wells and superlattices. Journal of Crystal Growth, 159(1-4):134-137, 1996. Note: Proceedings of the seventh international conference on II-VI compouds and devices. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(95)00761-X]



38. S. Lankes, B. Hahn, C. Meier, F. Hierl, M. Kastner, A. Rosenauer, and W. Gebhardt. Photoreflectance measurements on ZnSe/ZnS0.25Se0.75SQW. physica status solidi (a), 152(1):123-131, 1995. ISSN: 1521-396X. [doi:10.1002/pssa.2211520113]



39. A. Rosenauer, T. Reisinger, E. Steinkirchner, J. Zweck, and W. Gebhardt. High resolution transmission electron microscopy determination of Cd diffusion in CdSeZnSe single quantum well structures. Journal of Crystal Growth, 152(1-2):42-50, 1995. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(95)00083-6]



40. A. Naumov, H. Stanzl, K. Wolf, A. Rosenauer, S. Lankes, and W. Gebhardt. Exciton recombination in ZnSexTe1−x/ZnTe {QWs} and ZnSexTe1−x epilayers grown by metalorganic vapour phase epitaxy. Journal of Crystal Growth, 138(1-4):595-600, 1994. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(94)90875-3]

1. U. Rossow, L. Hoffmann, H. Bremers, R. Buss, F. Ketzer, T. Langer, T. Mehrtens, M. Schowalter, A. Rosenauer, and A. Hangleiter. Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells. In ICMOVPE XVII, Lausanne (Switzerland) [Poster presenation], 2014.



2. Tim Grieb, Knut Müller, Emanuel Cadel, Rafael Fritz, Nils Neugebohrn, Etienne Talbot, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Chemical composition analysis of dilute GaNAs and InGaNAs by high-angle annular dark field STEM. In International Conference on Electron Microscopy and XXIV Annual Meeting of the Electron Microscope Society of India (EMSI) 2013, Kolkata (India) [Talk], 2013.



3. T. Grieb, K. Müller, E. Cadel, R. Fritz, E. Talbot, M. Schowalter, K. Volz, and A. Rosenauer. Determination of In and N concentration in (InGa)(NAs) quantum wells using HAADF STEM and investigation of annealing effects. In Proceedings of the Microscopy Conference 2013 (MC 2013, Regensburg) Germany [Poster], volume 1: Instrumentation and Methods, pages IM.1.P024, 2013.



4. T. Grieb, K. Müller, R. Fritz, V. Grillo, M. Schowalter, K. Volz, and A. Rosenauer. Avoiding surface strain field induced artifacts in 2d chemical mapping of dilute GaNAs quantum wells by HAADF STEM. In Proceedings of the Microscopy Conference 2013 (MC 2013, Regensburg) Germany [Poster], volume 1: Instrumentation and Methods, pages IM.1.P008, 2013.



5. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A method to avoid strain field induced artifacts in 2D chemical mapping of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis [Talk 595], volume 18, pages 1028-1029, 2012. [doi:10.1017/S143192761200699X]



6. Tim Grieb, Knut Müller, Andreas Hyra, Rafael Fritz, Marco Schowalter, Nicolai Knaub, and Andreas Rosenauer. Chemical analysis of InGaNAs quantum wells using HAADF STEM. In EMC 2012 [Poster], Session PS1.2: Thin films, Coatings and Interface, Manchester (UK), 2012. [WWW]



7. Lars Hoffmann, Heiko Bremers, Holger Jönen, Uwe Rossow, Thorsten Mehrtens, Marco Schowalter, Andreas Rosenauer, and Andreas Hangleiter. STEM and XRD investigations of ultra thin GaInN/GaN quantum wells with high indium content. In Verhandlungen der DPG, number HL 64.6, pages 240, 2012.



8. L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, T. Mehrtens, M. Schowalter, A. Rosenauer, and A. Hangleiter. STEM and XRD investigations of ultra-thin GaInN/GaN quantum wells with high indium content. In International Workshop on Nitride Semiconductors 2012 [Talk], 2012.



9. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain analysis by nano-beam electron diffraction (SANBED) in semiconductor nanostructures [Invited talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, pages 36, 2012. Keyword(s): SANBED.



10. T. Grieb, K. Müller, O. Rubel, R. Fritz, M. Schowalter, K. Volz, and A. Rosenauer. STEM strain state analysis in combination with HAADF intensity evaluation to determine chemical composition of GaNAs quantum wells. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel), volume 1: Instrumentation and Methods, pages IM2.P120, 2011. DGE - German Society for Electron Microscopy.



11. Andreas Rosenauer, Thorsten Mehrtens, Stephanie Bley, Knut Müller, Katharina Gries, Marco Schowalter, Christian Tessarek, Detlef Hommel, Kathrin Sebald, Moritz Seyfried, and Jürgen Gutowski. Composition mapping in InGaN quantum wells and quantum dots using high resolution STEM imaging. In International Microscopy Congress (IMC17), Rio de Janeiro (Brazil) [Poster presentation], 2010.



12. J. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Ab initio based atomic scattering amplitudes and 002 electron structure factor of GaInAs/GaAs quantum wells. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012040, 2010.



13. Thorsten Mehrtens, Marco Schowalter, Knut Müller, Andreas Rosenauer, Dongzhi Hu, and Daniel Schaadt. Analysis of segregation profiles in InGaAs quantum wells via TEM and STEM. In Verhandlungen der DPG, number HL 1.6, 2009.



14. John T. Titantah, Dirk Lamoen, Marco Schowalter, Andreas Rosenauer, and Knut Müller. Ab initio based atomic scattering amplitudes and 002 electron structure factor of GaInAsN / GaAs quantum wells. In 32nd International Symposium on Dynamical Properties of Solids, Antwerp (Belgium) [Poster presentation], September 2009.



15. T. Aschenbrenner, S. Figge, D. Hommel, M. Schowalter, and A. Rosenauer. MOVPE-growth of a-plane InGaN quantum wells on GaN buffer layers on r-plane sapphire substrates. In IC-MOVPE, 1.-6. June 2008, 2008.



16. D. Litvinov, D. Gerthsen, A. Rosenauer, T. Passow, M. Grün, C. Klingshirn, and M. Hetterich. In-distribution in InGaAs Quantum Wells and Quantum Islands. In Presented at MCMXIV, Oxford, 2005.



17. E. Piscopiello, A. Rosenauer, A. Passaseo, and G. Van Tendeloo. Segregation in InGaAs/GaAs quantum wells grown by MOCVD Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 123-124. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 123-124, 2004.



18. D. Gerthsen, E. Hahn, V. Potin, A. Rosenauer, B. Kuhn, J. Off, F. Scholz, A. Dussaigne, B. Damilano, and N. Grandjean. In distribution in InGaN quantum wells: influence of phase separation, In segregation and In desorption. In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003), 2003.



19. A. Rosenauer, M. Melzer, M. Schowalter, D. Gerthsen, E. Piscopiello, A. Passaseo, R. Cingolani, R. Reithmaier, J. P. amd Krebs, A. Forchel, and G. Van Tendeloo. Segregation in InGaAs/GaAs Quantum Wells: MOCVD versus MBE. In Microscopy Conference MC2003, International Forum for Advanced Microscopy, September 7-12, 2003, Dresden, Germany Micrsocopy and Microanalysis 9 (2003) 230-1, 2003.



20. M. Schowalter, A. Rosenauer, D. Gerthsen, R. Sellin, and D. Bimberg. Structure factors for the composition determination of InGaAs/GaAs quantum wells with the 002 beam: Isolated atom approximation versus density function theory. In Microscopy Conference MC2003, International Forum for Advanced Microscopy, September 7-12, 2003, Dresden, Germany Microscopy and Microanalysis 9 (2003), 234-5, 2003.



21. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Influence of growth interruptions on the composition of GaSb/GaAs quantum wells. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 53, 2002.



22. V. Potin, E. Hahn, A. Rosenauer, and D. Gerthsen. Determination of indium composition fluctuation in InGaN/GaN quantum wells by quantitative high resolution electron microscopy. In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Inst. Phys. Conf. Ser. 169, 25-28 Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.



23. D. Luerssen, R. Bleher, H. Kalt, H. Richter, T. Schimmel, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, B. Jobst, K. Ohkawa, and D. Hommel. Localization of excitons in pairs of natural dots induced by stacking faults in ZnSe quantum wells. In 6th International Meeting on Optics of Excitons in Confined Systems (OECS-6). - 30 Aug.-2 Sept. 1999 Phys. Status Solidi A 178, 189-92, 2000.



24. D. Luerssen, R. Bleher, H. Kalt, H. Richter, T. Schimmel, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, B. Jobst, K. Ohkawa, and D. Hommel. Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells,. In II-VI Compounds 1999. Ninth International Conference, 1-5 Nov. 1999 J. Cryst. Growth 214-215, .634-8, 2000.



25. T. Reisinger, A. Rosenauer, F. Franzen, and W. Gebhardt. In-Situ Growth Control of ZnSe/GaAs and ZnCdSe Quantum Wells,. In International Conference on Semiconductor Heteroepitaxy, Monpellier, France, July 4th to 7th, World Scientific, 1995, 118-121, 1995.

1. Knut Müller. Nanowires, quantum wells, MOSFETs: Scanning and conventional TEM characterisation of structure and composition [Invited talk], October 2014.



2. Patrick Karasch. Messung von Verspannungen und piezoelektrischen Feldern in InGaN/GaN Quantentrögen mittels Elektronenbeugung (Measurement of strain and piezoelectric fields in InGaN/GaN quantum wells by electron diffraction), August 2012.

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