1. H. Kauko, B. O. Fimland, T. Grieb, A. M. Munshi, K. Müller, A. Rosenauer, and A. T. J. van Helvoort. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires. Journal of Applied Physics, 116(14):144303, 2014. [doi:10.1063/1.4896904]



2. H. Kauko, T. Grieb, A. M. Munshi, K. Mller, A. Rosenauer, B. O. Fimland, and A. T. J. van Helvoort. The Outward Diffusion of Sb during Nanowire Growth Studied by Quantitative High-Angle Annular Dark Field Scanning Transmission Electron Microscopy. Microscopy and Microanalysis, 20:186-187, 8 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614002657]



3. H. Kauko, T. Grieb, R. Bjørge, M. Schowalter, A.M. Munshi, H. Weman, A. Rosenauer, and A.T.J. van Helvoort. Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM. Micron, 44(0):254-260, 2013. ISSN: 0968-4328. [WWW] [doi:10.1016/j.micron.2012.07.002] Keyword(s): HAADF-STEM.



4. Thorsten M. Gesing, Marco Schowalter, Claudia Weidenthaler, Andreas Rosenauer, Hartmut Schneider, and Reinhard X. Fischer. Mullite-type (Bi${\sb 1{$-$\it x}}$Sr${\sb {\it x}} ){\sb 2}$Al${\sb 4}$O${\sb 9{$-$\it x}/2}$: HT-XRPD, TEM and XPS investigations. Acta Crystallographica Section A, 66(a1):s182-s183, September 2010. [doi:10.1107/S0108767310095887]



5. R. Otto, H. Kirmse, I. Häusler, W. Neumann, A. Rosenauer, D. Bimberg, and L. Muller-Kirsch. Determination of composition and strain field of a III/V quaternary quantum dot system. Applied Physics Letters, 85(21):4908-4910, 2004. ISSN: 0003-6951. [doi:10.1063/1.1823602] Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, internal stresses, nucleation, semiconductor quantum dots, transmission electron microscopy, 6835Gy, 6837Lp, 6865Hb.



6. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 83(15):3123-3125, October 2003. Keyword(s): growth, GaSb, Ga, Sb, GaAs, Ga, As, quantum wells, quantum well,.

1. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative investigation of Sb distribution in GaSb/GaAs heterostructures,. In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003), 2003.

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