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Publications about 'segregation'
Books and proceedings
  1. M. Schowalter. Segregation in III-V Halbleiterheterostrukturen. Mensch und Buch Verlag, Berlin, 2003. Note: ISBN: 3-89820-559-2.


Articles in journal, book chapters
  1. U. Rossow, L. Hoffmann, H. Bremers, E.R. Buss, F. Ketzer, T. Langer, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer. Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells. Journal of Crystal Growth, 414(0):49-55, 2015. Note: Proceedings of the Seventeenth International Conference on Metalorganic Vapor Phase Epitaxy. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2014.11.040] Keyword(s): A1. Surface processes.


  2. Thorsten Mehrtens, Knut Müller, Marco Schowalter, Dongzhi Hu, Daniel M. Schaadt, and Andreas Rosenauer. Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images. Ultramicroscopy, 131(0):1-9, 2013. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2013.03.018] Keyword(s): HAADF-STEM.


  3. Th. Schmidt, M. Siebert, J. I. Flege, S. Figge, S. Gangopadhyay, A. Pretorius, T.-L. Lee, J. Zegenhagen, L. Gregoratti, A. Barinov, A. Rosenauer, D. Hommel, and J. Falta. Mg and Si dopant incorporation and segregation in GaN. physica status solidi (b), 248(8):1810-1821, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201046531] Keyword(s): defects, dopants, photoelectron microscopy, segregation, X-ray standing waves.


  4. Abdul Kadir, M.R. Gokhale, Arnab Bhattacharya, Angelika Pretorius, and Andreas Rosenauer. {MOVPE} growth and characterization of InN/GaN single and multi-quantum well structures. Journal of Crystal Growth, 311(1):95-98, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2008.10.056] Keyword(s): A1. Transmission electron microscopy.


  5. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in $In_{x}Ga_{1-{}x}As$. Phys. Rev. B, 74(16):165306, October 2006. [doi:10.1103/PhysRevB.74.165306]


  6. Th. Schmidt, M. Siebert, A. Pretorius, S. Gangopadhyay, S. Figge, J.I. Flege, L. Gregoratti, A. Barinov, D. Hommel, and J. Falta. Spectro-microscopy of Si doped GaN films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 246(1):79-84, 2006. Note: Synchrotron Radiation and Materials Science Proceedings of the E-MRS 2005 Symposium O on Synchrotron Radiation and Materials Science E-MRS 2005 Symposium O. ISSN: 0168-583X. [WWW] [doi:10.1016/j.nimb.2005.12.018] Keyword(s): Photoemission microscopy.


  7. M. Schowalter, A. Rosenauer, and D. Gerthsen. Influence of surface segregation on the optical properties of semiconductor quantum wells. Applied Physics Letters, 88(11):111906-111906-3, 2006. ISSN: 0003-6951. [doi:10.1063/1.2184907] Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, photoluminescence, semiconductor quantum wells, surface segregation, 6835Dv, 7855Cr, 7867De.


  8. Meng-Ku Chen, Yung-Chen Cheng, Jiun-Yang Chen, Cheng-Ming Wu, C.C. Yang, Kung-Jen Ma, Jer-Ren Yang, and Andreas Rosenauer. Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells. Journal of Crystal Growth, 279(1-2):55-64, 2005. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2005.02.018] Keyword(s): A1. Segregation.


  9. E. Piscopiello, A. Rosenauer, A. Passaseo, E. H. Montoya Rossi, and G. Van Tendeloo. Segregation in In(x)Ga(1-x)As/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition. Philosophical Magazine, 85(32):3857-3870, 2005. [doi:10.1080/147830500269402]


  10. V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano, and N. Grandjean. Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy. Journal of Crystal Growth, 262(1-4):145-150, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.10.082] Keyword(s): A1. Metalorganic vapor phase epitaxy.


  11. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668-1683, 2003. ISSN: 1610-1642. [doi:10.1002/pssc.200303129] Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.


  12. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 83(15):3123-3125, October 2003. Keyword(s): growth, GaSb, Ga, Sb, GaAs, Ga, As, quantum wells, quantum well,.


  13. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546-6552, 2002. ISSN: 0021-8979. [doi:10.1063/1.1516248] Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.


  14. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in In(x)Ga(1-x)As/GaAs$ Stranski-Krastanow layers}. Phys. Rev. B, 64(24):245334, December 2001. [doi:10.1103/PhysRevB.64.245334]


  15. A Rosenauer, D Van Dyck, M Arzberger, and G Abstreiter. Compositional analysis based on electron holography and a chemically sensitive reflection. Ultramicroscopy, 88(1):51-61, 2001. ISSN: 0304-3991. [WWW] [doi:10.1016/S0304-3991(00)00115-7] Keyword(s): Compositional analysis.


  16. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Investigation of In segregation in InAs/AlAs quantum-well structures. Appl. Phys. Lett., 79(26):4426-4428, December 2001. Keyword(s): segregation, InAs, In, As, InAs/AlAs, AlAs, Al, As, quantum-well.


  17. A. Rosenauer, W. Oberst, D. Litvinov, D. Gerthsen, A. Förster, and R. Schmidt. Structural and chemical investigation of $In_{0.6}Ga_{0.4}As$ Stranski-Krastanow layers buried in GaAs by transmission electron microscopy. Phys. Rev. B, 61(12):8276-8288, March 2000. [doi:10.1103/PhysRevB.61.8276]


  18. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Forster. Composition evaluation of In(x)Ga(1-x)As Stranski-Krastanow-island structures by strain state analysis. Applied Physics Letters, 71(26):3868-3870, 1997. [WWW] [doi:10.1063/1.120528] Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, island structure, transmission electron microscopy, lattice constants, molecular beam epitaxial growth, semiconductor epitaxial layers, finite element analysis, segregation, semiconductor growth.


  19. K. Tillmann, A. Thust, M. Lentzen, P. Swiatek, A. Förster, K. Urban, W. Laufs, D. Gerthsen, T. Remmele, and A. Rosenauer. Determination of segregation, elastic strain and thin-foil relaxation in In(x)Ga(1-x)As islands on GaAs(001) by high resolution transmission electron microscopy. Philosophical Magazine Letters, 74(5):309-315, 1996. [doi:10.1080/095008396180029]


Conference articles
  1. Thorsten Mehrtens, Marco Schowalter, Knut Müller, Dongzhi Hu, Daniel M. Schaadt, and Andreas Rosenauer. Measuring of segregation profiles from HAADF -STEM images. In International Microscopy Congress (IMC17), Rio de Janeiro (Brazil) [Poster presentation], 2010.


  2. Thorsten Mehrtens, Marco Schowalter, Knut Müller, Andreas Rosenauer, Dongzhi Hu, and Daniel Schaadt. Analysis of segregation profiles in InGaAs quantum wells via TEM and STEM. In Verhandlungen der DPG, number HL 1.6, 2009.


  3. Marco Schowalter, Thorsten Mehrtens, Kristian Frank, Knut Müller, and Andreas Rosenauer. Analysis of semiconductor interfaces and surface segregation using the composition evaluation by lattice fringe analyis (CELFA) method. In Physics at surfaces and Interfaces (PSI), Puri (India) [Talk], 2009.


  4. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, and M. Hetterich. The role of segregation in InGaAs heteroepitaxy. In presented at THERMEC, Advanced thin films and nanomaterials (2006) Materials Science Forum Vols. 539-543 (2007) 3540-3545, 2007.


  5. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, and M. Hetterich. The role of segregation in InGaAs heteroepitaxy. In Materials Science Forum, 539-543, (2007), 3540, 2007.


  6. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission Electron Microscopy Study of In-Segregation and Critical Floating-Layer Content of Indium for Island Formation in InGaAs. In Proceedings of the International Microscopy Conference 16, Sapporo, Japan (2006), 2006.


  7. M. Schowalter, A. Rosenauer, D. Litvinov, and D. Gerthsen. Investigation of segregation by quantitative transmission electron microscopy. In Optica Applicata 36 (2006) 297-309, 2006.


  8. E. Piscopiello, A. Rosenauer, A. Passaseo, and G. Van Tendeloo. Segregation in InGaAs/GaAs quantum wells grown by MOCVD Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 123-124. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 123-124, 2004.


  9. D. Gerthsen, E. Hahn, V. Potin, A. Rosenauer, B. Kuhn, J. Off, F. Scholz, A. Dussaigne, B. Damilano, and N. Grandjean. In distribution in InGaN quantum wells: influence of phase separation, In segregation and In desorption. In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003), 2003.


  10. M. Melzer, Marco Schowalter, Andreas Rosenauer, D. Gerthsen, and J. P. Reithmaier. Untersuchung der Segregation von In in InAs/AlAs Heterostrukturen. In DPG Frühjahrstagung, Dresden (Germany) Verhandl. DPG (VI) 38, 1, 186, 2003.


  11. A. Rosenauer, M. Melzer, M. Schowalter, D. Gerthsen, E. Piscopiello, A. Passaseo, R. Cingolani, R. Reithmaier, J. P. amd Krebs, A. Forchel, and G. Van Tendeloo. Segregation in InGaAs/GaAs Quantum Wells: MOCVD versus MBE. In Microscopy Conference MC2003, International Forum for Advanced Microscopy, September 7-12, 2003, Dresden, Germany Micrsocopy and Microanalysis 9 (2003) 230-1, 2003.


  12. M. Schowalter, M. Melzer, A. Rosenauer, D. Gerthsen, R. Krebs, J. P. Reithmaier, A. Forchel, M. Arzberger, M. Bichler, G. Abstreiter, M. Grau, M.-C. Amann, R. Sellin, and D. Bimberg. Segregation in III-V semiconductor heterostructures studied by transmission electron microscopy,. In Microcopy of Semiconducting Materials 2003, Cambridge, UK, 31 March-3 April 2003, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2003), 2003.


  13. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in InGaAs/GaAs quantum dot structrues. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 59, 2002.


  14. Marco Schowalter, Andreas Rosenauer, Dagmar Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Untersuchung der Segregation von In in InAs/AlAs Heterostrukturen. In DPG Frühjahrstagung, Regensburg (Germany) Verhandl. DPG (VI) 37, 1, 163, 2002.


  15. M. Schowalter, A. Rosenauer, D. Gerthsen, R. Sellin, and D. Bimberg. Segregation in MBE and MOCVD: A comparison. In International Conference on Electron Microscopy (ICEM) 15, Durban, 1-6 September 2002, p. 113, 2002.


  16. A. Rosenauer, W. Oberst, D. Gerthsen, and A. Förster. Atomic scale analysis of the indium distribution in InGaAs/GaAs(001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions,. In MRS Fall Meeting 1998, Symposium: Growth Instabilities and Decompostion DuringHeteroepitaxy. Thin Solid Films 357, 18-21, 1999.


Miscellaneous
  1. Thorsten Mehrtens. Bestimmung von Segregationsprofilen in InGaAs/GaAs-Quantentrögen mittels konventioneller und Rastertransmissionselektronenmikroskopie. Master's thesis, Universität Bremen, 2009.



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