BACK TO INDEX
Publications about 'silicon'
|
Articles in journal, book chapters
|
-
R. R. Juluri,
A. Rath,
A. Ghosh,
A. Bhukta,
R. Sathyavathi,
D. Narayana Rao,
Knut Müller,
Marco Schowalter,
Kristian Frank,
Tim Grieb,
Florian Krause,
Andreas Rosenauer,
and Parlapalli Vencata Satyam.
Coherently Embedded Ag Nanostructures in Si: 3D Imaging and their application to SERS.
Scientific Reports,
4:4633,
April 2014.
[doi:10.1038/srep04633]
-
A. Rath,
J. K. Dash,
R. R. Juluri,
A. Rosenauer,
Marcos Schoewalter,
and P. V. Satyam.
Growth of oriented Au nanostructures: Role of oxide at the interface.
Journal of Applied Physics,
111(6):064322,
2012.
[WWW]
[doi:10.1063/1.3698505]
Keyword(s): annealing,
electron energy loss spectra,
elemental semiconductors,
field emission electron microscopy,
gold,
metallic thin films,
molecular beam epitaxial growth,
nanofabrication,
nanoparticles,
scanning electron microscopy,
silicon,
silicon compounds,
transmission electron microscopy,
vacuum deposition.
-
J. K. Dash,
A. Rath,
R. R. Juluri,
P. Santhana Raman,
K. Müller,
A. Rosenauer,
and P. V. Satyam.
DC heating induced shape transformation of Ge structures on ultra clean Si (5 5 12) surfaces.
Journal of Physics: Condensed matter,
23:135002,
2011.
-
J. K. Dash,
A. Rath,
R. R. Juluri,
P. Santhana Raman,
K. Müller,
M. Schowalter,
R. Imlau,
A. Rosenauer,
and P. V. Satyam.
Shape transformation of SiGe structures on ultra clean Si(5 5 7) and Si(5 5 12) surfaces.
Journal of Physics: Conference Series,
326(1):012021,
2011.
[WWW]
-
A Rath,
J K Dash,
R R Juluri,
A Rosenauer,
and P V Satyam.
Temperature-dependent electron microscopy study of Au thin films on Si (1 0 0) with and without a native oxide layer as barrier at the interface.
Journal of Physics D: Applied Physics,
44(11):115301,
2011.
[WWW]
-
Th. Schmidt,
M. Siebert,
J. I. Flege,
S. Figge,
S. Gangopadhyay,
A. Pretorius,
T.-L. Lee,
J. Zegenhagen,
L. Gregoratti,
A. Barinov,
A. Rosenauer,
D. Hommel,
and J. Falta.
Mg and Si dopant incorporation and segregation in GaN.
physica status solidi (b),
248(8):1810-1821,
2011.
ISSN: 1521-3951.
[doi:10.1002/pssb.201046531]
Keyword(s): defects,
dopants,
photoelectron microscopy,
segregation,
X-ray standing waves.
-
A. Schaefer,
A. Sandell,
L.E. Walle,
V. Zielasek,
M. Schowalter,
A. Rosenauer,
and M. Bäumer.
Chemistry of thin film formation and stability during praseodymium oxide deposition on Si(111) under oxygen-deficient conditions.
Surface Science,
604(15–16):1287-1293,
2010.
ISSN: 0039-6028.
[WWW]
[doi:10.1016/j.susc.2010.04.016]
Keyword(s): Praseodymium oxide.
-
Meng-Ku Chen,
Yung-Chen Cheng,
Jiun-Yang Chen,
Cheng-Ming Wu,
C.C. Yang,
Kung-Jen Ma,
Jer-Ren Yang,
and Andreas Rosenauer.
Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells.
Journal of Crystal Growth,
279(1-2):55-64,
2005.
ISSN: 0022-0248.
[WWW]
[doi:10.1016/j.jcrysgro.2005.02.018]
Keyword(s): A1. Segregation.
-
Yung-Chen Cheng,
En-Chiang Lin,
Cheng-Ming Wu,
C.C. Yang,
Jer-Ren Yang,
Andreas Rosenauer,
Kung-Jen Ma,
Shih-Chen Shi,
L.C. Chen,
Chang-Chi Pan,
and Jen-Inn Chyi.
Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions.
Applied Physics Letters,
84(14):2506-2508,
2004.
ISSN: 0003-6951.
[doi:10.1063/1.1690872]
Keyword(s): III-V semiconductors,
gallium compounds,
indium compounds,
photoluminescence,
quantum confined Stark effect,
semiconductor doping,
semiconductor quantum wells,
silicon,
wide band gap semiconductors,
6172Vv,
6865Fg,
7855Cr,
7867De.
-
Moritz Speckmann,
Thomas Schmidt,
Jan Ingo Flege,
Inga Heidmann,
Andre Kubelka,
Locatelli A.,
T. O. Mentes,
M. A. Nino,
Knut Müller,
Andreas Rosenauer,
and Jens Falta.
Facets, mazes, slabs, and nanowires: silver-mediated germanium growth on silicon surfaces.
In 37th International conference on Vacuum Ultraviolet and X-ray Physics (VUVX), Vancouver (Canada) [Talk],
2010.
-
Moritz Tewes.
Quantitative STEM-Untersuchung von Germanium-Silizium-Heterostrukturen (Quantitative STEM investigations of germanium-silicon heterostructures).
Master's thesis,
Universität Bremen,
Otto-Hahn-Allee 1, 28359 Bremen, Germany,
February 2013.
BACK TO INDEX
Disclaimer:
This material is presented to ensure timely dissemination of
scholarly and technical work. Copyright and all rights therein
are retained by authors or by other copyright holders.
All person copying this information are expected to adhere to
the terms and constraints invoked by each author's copyright.
In most cases, these works may not be reposted
without the explicit permission of the copyright holder.
Les documents contenus dans ces répertoires sont rendus disponibles
par les auteurs qui y ont contribué en vue d'assurer la diffusion
à temps de travaux savants et techniques sur une base non-commerciale.
Les droits de copie et autres droits sont gardés par les auteurs
et par les détenteurs du copyright, en dépit du fait qu'ils présentent
ici leurs travaux sous forme électronique. Les personnes copiant ces
informations doivent adhérer aux termes et contraintes couverts par
le copyright de chaque auteur. Ces travaux ne peuvent pas être
rendus disponibles ailleurs sans la permission explicite du détenteur
du copyright.
Last modified: Wed Sep 21 12:45:12 2016
Author: knut.
This document was translated from BibTEX by
bibtex2html