1. D. Litvinov, A. Rosenauer, and D. Gerthsen. Transformation of Shockley into Frank stacking faults in a ZnS 0.04 Se 0.96 /GaAs (001) heterostructure. Philosophical Magazine Letters, 83(9):575-581, 2003. [doi:10.1080/09500830310001594282]



2. D. Litvinov, A. Rosenauer, D. Gerthsen, and H. Preis. Electron microscopy investigation of the defect configuration in CdSe/ZnSe quantum dot structures. Philosophical Magazine A, 82(7):1361-1380, 2002. [doi:10.1080/01418610208235677]



3. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546-6552, 2002. ISSN: 0021-8979. [doi:10.1063/1.1516248] Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.



4. D. Schikora, S. Schwedhelm, D. J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, and D. Bimberg. Investigations on the Stranski--Krastanow growth of CdSe quantum dots. Applied Physics Letters, 76(4):418-420, 2000. [WWW] [doi:10.1063/1.125773] Keyword(s): semiconductor quantum dots, molecular beam epitaxial growth, self-assembly, island structure, stacking faults, cadmium compounds, II-VI semiconductors, reflection high energy electron diffraction, photoluminescence, monolayers.



5. D. Luerssen, R. Bleher, H. Richter, Th. Schimmel, H. Kalt, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, K. Ohkawa, B. Jobst, and D. Hommel. Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures. Applied Physics Letters, 75(25):3944-3946, 1999. [WWW] [doi:10.1063/1.125502] Keyword(s): zinc compounds, magnesium compounds, II-VI semiconductors, wide band gap semiconductors, semiconductor quantum wells, stacking faults, defect states, interface states, interface structure, photoluminescence, atomic force microscopy, transmission electron microscopy, excitons.



6. Marcus J. Kastner, Gabriella Leo, Doris Brunhuber, Andreas Rosenauer, Herbert Preis, Berthold Hahn, Markus Deufel, and Wolfgang Gebhardt. Investigations on strain relaxation of ZnS(x)Se(1−x) layers grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 172(1-2):64-74, 1997. ISSN: 0022-0248. [WWW] [doi:10.1016/S0022-0248(96)00722-1]

1. D. Luerssen, R. Bleher, H. Kalt, H. Richter, T. Schimmel, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, B. Jobst, K. Ohkawa, and D. Hommel. Localization of excitons in pairs of natural dots induced by stacking faults in ZnSe quantum wells. In 6th International Meeting on Optics of Excitons in Confined Systems (OECS-6). - 30 Aug.-2 Sept. 1999 Phys. Status Solidi A 178, 189-92, 2000.

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