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Publications about 'Stark effect'
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Articles in journal, book chapters
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Meng-Ku Chen,
Yung-Chen Cheng,
Jiun-Yang Chen,
Cheng-Ming Wu,
C.C. Yang,
Kung-Jen Ma,
Jer-Ren Yang,
and Andreas Rosenauer.
Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells.
Journal of Crystal Growth,
279(1-2):55-64,
2005.
ISSN: 0022-0248.
[WWW]
[doi:10.1016/j.jcrysgro.2005.02.018]
Keyword(s): A1. Segregation.
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Yung-Chen Cheng,
Cheng-Ming Wu,
C. C. Yang,
Gang Alan Li,
Andreas Rosenauer,
Kung-Jen Ma,
Shih-Chen Shi,
and L. C. Chen.
Effects of interfacial layers in InGaN/GaN quantum-well structures on their optical and nanostructural properties.
Journal of Applied Physics,
98(1):014317,
2005.
[WWW]
[doi:10.1063/1.1978988]
Keyword(s): indium compounds,
gallium compounds,
III-V semiconductors,
wide band gap semiconductors,
semiconductor quantum wells,
nanostructured materials,
photoluminescence,
electroluminescence,
Stark effect.
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Yung-Chen Cheng,
En-Chiang Lin,
Cheng-Ming Wu,
C.C. Yang,
Jer-Ren Yang,
Andreas Rosenauer,
Kung-Jen Ma,
Shih-Chen Shi,
L.C. Chen,
Chang-Chi Pan,
and Jen-Inn Chyi.
Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions.
Applied Physics Letters,
84(14):2506-2508,
2004.
ISSN: 0003-6951.
[doi:10.1063/1.1690872]
Keyword(s): III-V semiconductors,
gallium compounds,
indium compounds,
photoluminescence,
quantum confined Stark effect,
semiconductor doping,
semiconductor quantum wells,
silicon,
wide band gap semiconductors,
6172Vv,
6865Fg,
7855Cr,
7867De.
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