1. Knut Müller. Transmission electron microscopy of InGaNAs nanostructures using ab-initio structure factors for strain-relaxed supercells. PhD thesis, Universität Bremen, May 2011.

1. Marco Schowalter, Ingo Stoffers, Florian F. Krause, Thorsten Mehrtens, Knut Müller, Malte Fandrich, Timo Aschenbrenner, Detlef Hommel, and Andreas Rosenauer. Influence of Static Atomic Displacements on Composition Quantification of AlGaN/GaN Heterostructures from HAADF-STEM Images. Microscopy and Microanalysis, 20:1463-1470, 10 2014. ISSN: 1435-8115. [doi:10.1017/S1431927614012732]



2. H. Kauko, T. Grieb, R. Bjørge, M. Schowalter, A.M. Munshi, H. Weman, A. Rosenauer, and A.T.J. van Helvoort. Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM. Micron, 44(0):254-260, 2013. ISSN: 0968-4328. [WWW] [doi:10.1016/j.micron.2012.07.002] Keyword(s): HAADF-STEM.



3. M Tewes, F F Krause, K Müller, P Potapov, M Schowalter, T Mehrtens, and A Rosenauer. Quantitative Composition Evaluation from HAADF-STEM in GeSi/Si Heterostructures. Journal of Physics: Conference Series, 471(1):012011, 2013. [WWW]



4. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging and improved STEM-HAADF strain state analysis. Ultramicroscopy, 117:15-23, 2012. [WWW] [doi:10.1016/j.ultramic.2012.03.014]



5. Marco Schowalter, Knut Müller, and Andreas Rosenauer. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III--V and II--VI semiconductors. Acta Crystallographica Section A, 68(1):68-76, January 2012. [doi:10.1107/S010876731103777] Keyword(s): scattering factors, static atomic displacements, modified atomic scattering amplitudes, correction factor.



6. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging. Journal of Physics: Conference Series, 326(1):012033, 2011. [WWW]



7. Robert Imlau, Knut Müller, Oleg Rubel, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing. Journal of Physics: Conference Series, 326(1):012038, 2011. [WWW]



8. Knut Müller, Marco Schowalter, Andreas Rosenauer, Dongzhi Hu, Daniel M. Schaadt, Michael Hetterich, Philippe Gilet, Oleg Rubel, Rafael Fritz, and Kerstin Volz. Atomic scale annealing effects on InGaNAs studied by TEM three-beam imaging. Physical Review B, 84(4):045316, July 2011. [doi:10.1103/PhysRevB.84.045316]



9. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Stephanie Bley, Parlapalli Venkata Satyam, Adrian Avramescu, Karl Engl, and Stephan Lutgen. 2D-composition mapping in InGaN without electron beam induced clustering of indium by STEM HAADF Z-contrast imaging. Journal of Physics: Conference Series, 326(1):012040, 2011. [WWW]



10. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Parlapalli Venkata Satyam, Stephanie Bley, Christian Tessarek, Detlef Hommel, Katrin Sebald, Moritz Seyfried, Jürgen Gutowski, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Composition mapping in InGaN by scanning transmission electron microscopy. Ultramicroscopy, 111:1316-1327, 2011. ISSN: 0304-3991. [WWW] Keyword(s): Quantitative STEM, Composition determination, Multislice simulation, Frozen lattice simulation.



11. Knut Müller, Marco Schowalter, Andreas Rosenauer, Oleg Rubel, and Kerstin Volz. Effect of bonding and static atomic displacements on composition quantification in InGaNAs. Phys. Rev. B, 81(7):075315, February 2010. [doi:10.1103/PhysRevB.81.075315]



12. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron scattering in strained In(x)Ga(1-x)As. Phys. Rev. B, 72:085326, August 2005. [doi:10.1103/PhysRevB.72.085326] Keyword(s): structure factor, strain, InGaAs, In, Ga, As, first-principles calculation, electron scattering.

1. Tim Grieb, Knut Müller, Emanuel Cadel, Rafael Fritz, Nils Neugebohrn, Etienne Talbot, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Chemical composition analysis of dilute GaNAs and InGaNAs by high-angle annular dark field STEM. In International Conference on Electron Microscopy and XXIV Annual Meeting of the Electron Microscope Society of India (EMSI) 2013, Kolkata (India) [Talk], 2013.



2. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A method to avoid strain field induced artifacts in 2D chemical mapping of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis [Talk 595], volume 18, pages 1028-1029, 2012. [doi:10.1017/S143192761200699X]



3. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Alexander Würfel, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Lars Hoffmann, Andreas Hangleiter, S. A. Gerstl, Pyuck-Pa Choi, and Dirk Raabe. Measurement of composition and strain in InGaN quantum dots by STEM [Plenary talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, EMSI2012, Bengaluru (Indien), July 4, 2012 [invited talk], pages 25, 2012.



4. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Measurement of composition and strain by STEM. In Microscopy and Microanalysis 2012 (M&M2012), Phoenix, Arizona, July 29-August 2 [Invited talk], volume 18, pages 1804-1805, 2012. [doi:10.1017/S1431927612010872]



5. A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, P. V. Satyam, S. Bley, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, J. Gutowski, S. S. A. Gerstl, P. P. Choi, and D. Raabe. Composition mapping in InGaN with quantitative STEM Z-contrast imaging. In ICNS Glasgow 2011 [Invited talk], 2011.

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