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Publications about 'stoichiometry'
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Knut Müller.
Transmission electron microscopy of InGaNAs nanostructures using ab-initio structure factors for strain-relaxed supercells.
PhD thesis,
Universität Bremen,
May 2011.
Articles in journal, book chapters
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K. Müller,
M. Schowalter,
O. Rubel,
D. Z. Hu,
D. M. Schaadt,
M. Hetterich,
P. Gilet,
R. Fritz,
K. Volz,
and A. Rosenauer.
TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells.
Journal of Physics: Conference Series,
326(1):012026,
2011.
[WWW]
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B. Neubauer,
A. Rosenauer,
D. Gerthsen,
O. Ambacher,
and M. Stutzmann.
Analysis of composition fluctuations on an atomic scale in Al(0.25)Ga(0.75)N by high-resolution transmission electron microscopy.
Applied Physics Letters,
73(7):930-932,
1998.
[WWW]
[doi:10.1063/1.122041]
Keyword(s): aluminium compounds,
gallium compounds,
wide band gap semiconductors,
III-V semiconductors,
stoichiometry,
fluctuations,
transmission electron microscopy,
lattice constants,
semiconductor heterojunctions,
interface structure,
semiconductor epitaxial layers.
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Marcus J. Kastner,
Berthold Hahn,
Claus Auchter,
Markus Deufel,
Andreas Rosenauer,
and Wolfgang Gebhardt.
Structural characterization and MOVPE growth of ZnCdSe and ZnSSe layers, quantum wells and superlattices.
Journal of Crystal Growth,
159(1-4):134-137,
1996.
Note: Proceedings of the seventh international conference on II-VI compouds and devices.
ISSN: 0022-0248.
[WWW]
[doi:10.1016/0022-0248(95)00761-X]
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W.S. Kuhn,
A. Lusson,
B. Qu'Hen,
C. Grattepain,
H. Dumont,
O. Gorochov,
S. Bauer,
K. Wolf,
M. Wörz,
T. Reisinger,
A. Rosenauer,
H.P. Wagner,
H. Stanzl,
and W. Gebhardt.
The metal organic vapour phase epitaxy of ZnTe: III. Correlation of growth and layer properties.
Progress in Crystal Growth and Characterization of Materials,
31(1-2):119-177,
1995.
ISSN: 0960-8974.
[WWW]
[doi:10.1016/0960-8974(95)00018-6]
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Last modified: Wed Sep 21 12:45:13 2016
Author: knut.
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