1. C. Mahr, K. Müller-Caspary, T. Grieb, M. Schowalter, T. Mehrtens, F.F. Krause, D. Zillmann, and A. Rosenauer. Theoretical study of precision and accuracy of strain analysis by nano-beam electron diffraction. Ultramicroscopy, 158(0):38-48, 2015. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.06.011] Keyword(s): Strain measurement.



2. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy. Microscopy and Microanalysis, 18(05):995-1009, 2012. [doi:10.1017/S1431927612001274]



3. Knut Müller, Henning Ryll, Ivan Ordavo, Sebastian Ihle, Lothar Strüder, Kerstin Volz, Josef Zweck, Heike Soltau, and Andreas Rosenauer. Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device. Applied Physics Letters, 101(21):212110, 2012. [WWW] [doi:10.1063/1.4767655] Keyword(s): CCD image sensors, electron detection, electron probes, nanostructured materials, scanning-transmission electron microscopy, semiconductor materials, strain measurement.



4. A. Rosenauer and D. Gerthsen. Composition evaluation by the lattice fringe analysis method using defocus series. Ultramicroscopy, 76(1):49-60, 1999.



5. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Förster. Composition evaluation by lattice fringe analysis. Ultramicroscopy, 72:121-133, 1998. [doi:10.1016/S0304-3991(98)00002-3]



6. Marcus J. Kastner, Gabriella Leo, Doris Brunhuber, Andreas Rosenauer, Herbert Preis, Berthold Hahn, Markus Deufel, and Wolfgang Gebhardt. Investigations on strain relaxation of ZnS(x)Se(1−x) layers grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 172(1-2):64-74, 1997. ISSN: 0022-0248. [WWW] [doi:10.1016/S0022-0248(96)00722-1]



7. A. Rosenauer, T. Remmele, D. Gerthsen, K. Tillmann, and A. Förster. Atomic scale strain measurements by the digital analysis of transmission electron microscopic lattice images. Optik (Stuttgart), 105(3):99-107, 1997. Note: Eng. ISSN: 0030-4026. [WWW] Keyword(s): Experimental study, TEM, Electron microscopy, High-resolution methods, Measuring methods, Stress analysis, Layer thickness, Crystals, Semiconductor materials.

1. C. Mahr, K. Müller-Caspary, A. Oelsner, A. Rosenauer, and P. Potapov. STEM strain measurement from a stream of diffraction patterns recorded on a pixel-free delay-line detector [Talk]. In EMAG conference 2016, Durham, UK, 2016.



2. Knut Müller-Caspary, Andreas Oelsner, and Pavel Potapov. STEM Strain Measurement From a Stream of Diffraction Patterns Recorded on a Pixel-Free Delay-Line Detector. In Microscopy and Microanalysis 2016, Columbus (OH/USA), [Poster], July 24-28th 2016.



3. Knut Müller-Caspary, Andreas Oelsner, Pavel Potapov, and Thomas Schmidt. Analysis of strain and composition in GeSi/Si heterostructures by electron microscopy. In European Microscopy Congress 2016, Lyon (F), [Talk MS03-OP239], 2016. [doi:10.1002/EMC2016.0311]



4. C. Mahr, K. Müller, M. Schowalter, T. Mehrtens, T. Grieb, F.F. Krause, D. Erben, and A. Rosenauer. Analysis and improvement of precision and accuracy of strain measurements by convergent nano-beam electron diffraction (SANBED). In Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK) [Talk], volume Session 3b, Tue, March 31st, 2015.



5. Knut Müller, Andreas Oelsner, Andreas Rosenauer, and Pavel Potapov. STEM strain measurement from a stream of diffraction patterns recorded on a pixel-free delay-line detector. In Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK) [Poster], volume Poster Session 2, Poster P 2.5 (Tue, March 31st), 2015.



6. K. Müller-Caspary, Andreas Oelsner, Andreas Rosenauer, and Pavel Potapov. STEM strain measurement from a stream of diffraction patterns recorded on a pixel-free delay-line detector. In Microscopy Conference MC 2015, Göttingen (D), session IM 1, [Poster IM1.P029], September 6-11th 2015.



7. C. Mahr, K. Müller, D. Erben, M. Schowalter, J. Zweck, K. Volz, and A. Rosenauer. Strain Analysis by Nano-Beam Electron Diffraction (SANBED) in semiconductor nanostructures. In 18th International Microscopy Congress (IMC) [Poster IT-9-P-3029], 2014.



8. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain analysis by nano-beam electron diffraction (SANBED) in semiconductor nanostructures [Invited talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, pages 36, 2012. Keyword(s): SANBED.



9. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor nanostructures by convergent electron nanoprobe diffraction [Talk]. In Verhandlungen der Deutschen Physikalischen Gesellschaft, volume 47, pages 312, 2012.



10. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Measurement of composition and strain by STEM. In Microscopy and Microanalysis 2012 (M&M2012), Phoenix, Arizona, July 29-August 2 [Invited talk], volume 18, pages 1804-1805, 2012. [doi:10.1017/S1431927612010872]

1. Daniel Erben. Verspannungsmessungen in SiGe-basierten Feldeffekttransistoren mittels konvergenter Elektronenbeugung (Strain measurements in SiGe-based field effect transistors using convergent electron diffraction), August 2012.



2. C. Mahr. Einfluss von Linsenfehlers auf Verspannungsmessungen aus CBED-Bildern im TEM (Impact of lens aberrations on strain measurements from CBED images in a TEM), July 2012.

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