1. A. Rosenauer. Transmission Electron Microscopy of Semiconductor Nanostructures An Analysis of Composition and Strain State. Springer Tracts in Modern Physics 182 Springer-Verlag Berlin Heidelberg, 2003 ISBN 3-540-00414-9, 2003.

1. Daniel Carvalho, Knut Müller-Caspary, Marco Schowalter, Tim Grieb, Thorsten Mehrtens, Andreas Rosenauer, Rafael Ben, Teresa Garcìa, Andrés Redondo-Cubero, Katharina Lorenz, Bruno Daudin, and Francisco M. Morales. Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction. Scientific Reports, 6:28459, June 2016. [doi:10.1038/srep28459] Keyword(s): DPC, strain, NBD, SANBED, nano-beam electron diffraction, polarization, polarisation, piezoelectric.



2. Tim Grieb, Knut Müller, Emmanuel Cadel, Andreas Beyer, Marco Schowalter, Etienne Talbot, Kerstin Volz, and Andreas Rosenauer. Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM. Microscopy and Microanalysis, 20:1740, 9 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614013051]



3. Duggi V. Sridhara Rao, Ramachandran Sankarasubramanian, Kuttanellore Muraleedharan, Thorsten Mehrtens, Andreas Rosenauer, and Dipankar Banerjee. Quantitative Strain and Compositional Studies of InGaAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques. Microscopy and Microanalysis, 20:1262-1270, 8 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614000762]



4. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging and improved STEM-HAADF strain state analysis. Ultramicroscopy, 117:15-23, 2012. [WWW] [doi:10.1016/j.ultramic.2012.03.014]



5. Marco Schowalter, Knut Müller, and Andreas Rosenauer. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III--V and II--VI semiconductors. Acta Crystallographica Section A, 68(1):68-76, January 2012. [doi:10.1107/S010876731103777] Keyword(s): scattering factors, static atomic displacements, modified atomic scattering amplitudes, correction factor.



6. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging. Journal of Physics: Conference Series, 326(1):012033, 2011. [WWW]



7. Angelika Pretorius, Thomas Schmidt, Timo Aschenbrenner, Tomohiro Yamaguchi, Christian Kübel, Knut Müller, Heiko Dartsch, Detlef Hommel, Jens Falta, and Andreas Rosenauer. Microstructural and compositional analyses of GaN based nanostructures. Physica Status Solidi, 248:1822-1836, 2011. [doi:10.1002/pssb.201147175]



8. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Parlapalli Venkata Satyam, Stephanie Bley, Christian Tessarek, Detlef Hommel, Katrin Sebald, Moritz Seyfried, Jürgen Gutowski, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Composition mapping in InGaN by scanning transmission electron microscopy. Ultramicroscopy, 111:1316-1327, 2011. ISSN: 0304-3991. [WWW] Keyword(s): Quantitative STEM, Composition determination, Multislice simulation, Frozen lattice simulation.



9. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Size effects and strain state of Ga(1-x)In(x)As/GaAs multiple quantum wells: Monte Carlo study. Phys. Rev. B, 78:165326, October 2008. [doi:10.1103/PhysRevB.78.165326]



10. A. Rosenauer, D. Gerthsen, and V. Potin. Strain state analysis of InGaN/GaN - sources of error and optimized imaging conditions. Phys. Status Solidi A, 203(1):176-184, January 2006. [doi:10.1002] Keyword(s): InGaN/GaN, In, Ga, N, optimised imaging conditions, optimized imaging conditions, aberrations, strain, strain state.



11. Meng-Ku Chen, Yung-Chen Cheng, Jiun-Yang Chen, Cheng-Ming Wu, C.C. Yang, Kung-Jen Ma, Jer-Ren Yang, and Andreas Rosenauer. Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells. Journal of Crystal Growth, 279(1-2):55-64, 2005. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2005.02.018] Keyword(s): A1. Segregation.



12. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron scattering in strained In(x)Ga(1-x)As. Phys. Rev. B, 72:085326, August 2005. [doi:10.1103/PhysRevB.72.085326] Keyword(s): structure factor, strain, InGaAs, In, Ga, As, first-principles calculation, electron scattering.



13. Yung-Chen Cheng, En-Chiang Lin, Cheng-Ming Wu, C.C. Yang, Jer-Ren Yang, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, L.C. Chen, Chang-Chi Pan, and Jen-Inn Chyi. Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions. Applied Physics Letters, 84(14):2506-2508, 2004. ISSN: 0003-6951. [doi:10.1063/1.1690872] Keyword(s): III-V semiconductors, gallium compounds, indium compounds, photoluminescence, quantum confined Stark effect, semiconductor doping, semiconductor quantum wells, silicon, wide band gap semiconductors, 6172Vv, 6865Fg, 7855Cr, 7867De.



14. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in In(x)Ga(1-x)As/GaAs$ Stranski-Krastanow layers}. Phys. Rev. B, 64(24):245334, December 2001. [doi:10.1103/PhysRevB.64.245334]



15. A. Rosenauer, W. Oberst, D. Litvinov, D. Gerthsen, A. Förster, and R. Schmidt. Structural and chemical investigation of $In_{0.6}Ga_{0.4}As$ Stranski-Krastanow layers buried in GaAs by transmission electron microscopy. Phys. Rev. B, 61(12):8276-8288, March 2000. [doi:10.1103/PhysRevB.61.8276]



16. A. Rosenauer and D. Gerthsen. Composition evaluation by the lattice fringe analysis method using defocus series. Ultramicroscopy, 76(1):49-60, 1999.



17. A. Rosenauer and D. Gerthsen. Atomic Scale Strain and Composition Evaluation from High-Resolution Transmission Electron Microscopy Images. In Peter W. Hawkes, editor, , volume 107 of Advances in Imaging and Electron Physics, pages 121-230. Elsevier, 1999. ISSN: 1076-5670. [WWW] [doi:10.1016/S1076-5670(08)70187-3]



18. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Förster. Composition evaluation by lattice fringe analysis. Ultramicroscopy, 72:121-133, 1998. [doi:10.1016/S0304-3991(98)00002-3]



19. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Forster. Composition evaluation of In(x)Ga(1-x)As Stranski-Krastanow-island structures by strain state analysis. Applied Physics Letters, 71(26):3868-3870, 1997. [WWW] [doi:10.1063/1.120528] Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, island structure, transmission electron microscopy, lattice constants, molecular beam epitaxial growth, semiconductor epitaxial layers, finite element analysis, segregation, semiconductor growth.

1. Knut Müller-Caspary, Thorsten Mehrtens, Marco Schowalter, Tim Grieb, Andreas Rosenauer, Florian F. Krause, Christoph Mahr, and Pavel Potapov. ImageEval. A software for the processing, evaluation and acquisition of (S)TEM images. In European Microscopy Congress 2016, Lyon (F), [Poster IM03-286], 2016. [doi:10.1002/EMC2016.0677]



2. Knut Müller-Caspary, Andreas Oelsner, Pavel Potapov, and Thomas Schmidt. Analysis of strain and composition in GeSi/Si heterostructures by electron microscopy. In European Microscopy Congress 2016, Lyon (F), [Talk MS03-OP239], 2016. [doi:10.1002/EMC2016.0311]



3. Knut Müller-Caspary, Oliver Oppermann, Tim Grieb, Andreas Rosenauer, Marco Schowalter, Florian F. Krause, Thorsten Mehrtens, Pavel Potapov, Andreas Beyer, and Kerstin Volz. Angle-resolved Scanning Transmission Electron Microscopy (ARSTEM) for materials analysis. In European Microscopy Congress 2016, Lyon (F), [Poster IM06-350], 2016. [doi:10.1002/EMC2016.0259]



4. Tim Grieb, Knut Müller, Emanuel Cadel, Rafael Fritz, Nils Neugebohrn, Etienne Talbot, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Chemical composition analysis of dilute GaNAs and InGaNAs by high-angle annular dark field STEM. In International Conference on Electron Microscopy and XXIV Annual Meeting of the Electron Microscope Society of India (EMSI) 2013, Kolkata (India) [Talk], 2013.



5. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A method to avoid strain field induced artifacts in 2D chemical mapping of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis [Talk 595], volume 18, pages 1028-1029, 2012. [doi:10.1017/S143192761200699X]



6. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain analysis by nano-beam electron diffraction (SANBED) in semiconductor nanostructures [Invited talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, pages 36, 2012. Keyword(s): SANBED.



7. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Alexander Würfel, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Lars Hoffmann, Andreas Hangleiter, S. A. Gerstl, Pyuck-Pa Choi, and Dirk Raabe. Measurement of composition and strain in InGaN quantum dots by STEM [Plenary talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, EMSI2012, Bengaluru (Indien), July 4, 2012 [invited talk], pages 25, 2012.



8. T. Grieb, K. Müller, O. Rubel, R. Fritz, M. Schowalter, K. Volz, and A. Rosenauer. STEM strain state analysis in combination with HAADF intensity evaluation to determine chemical composition of GaNAs quantum wells. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel), volume 1: Instrumentation and Methods, pages IM2.P120, 2011. DGE - German Society for Electron Microscopy.



9. A. Rosenauer and D. Gerthsen. Optimum imaging conditions for strain state analysis of InGaN/GaN heterostructures. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 103-104, 2004.



10. M. Schowalter, A. Rosenauer, D. Lamoen, and D. Gerthsen. Strain state analysis of InGAAs/GaAs heterostructures: Elastic relaxation in cross section and cleaved specimen,. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 129-130, 2004.



11. A. Rosenauer, D. Gerthsen, and A. Förster. Composition evaluation of In(x)Ga(1-x)As island structures by lattice fringe analysis and strain state analysis,. In Electron Microscopy 1998, paper presented at ICEM14, Cancun, Mexico, 31 August to 4 Septermber 1998, Symposium S, Volume I , 613-14, 1998.

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