1. A. Rosenauer. Transmission Electron Microscopy of Semiconductor Nanostructures An Analysis of Composition and Strain State. Springer Tracts in Modern Physics 182 Springer-Verlag Berlin Heidelberg, 2003 ISBN 3-540-00414-9, 2003.

1. Knut Müller. Transmission electron microscopy of InGaNAs nanostructures using ab-initio structure factors for strain-relaxed supercells. PhD thesis, Universität Bremen, May 2011.

1. Daniel Carvalho, Knut Müller-Caspary, Marco Schowalter, Tim Grieb, Thorsten Mehrtens, Andreas Rosenauer, Rafael Ben, Teresa Garcìa, Andrés Redondo-Cubero, Katharina Lorenz, Bruno Daudin, and Francisco M. Morales. Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction. Scientific Reports, 6:28459, June 2016. [doi:10.1038/srep28459] Keyword(s): DPC, strain, NBD, SANBED, nano-beam electron diffraction, polarization, polarisation, piezoelectric.



2. Matthias Lohr, Ralph Schregle, Michael Jetter, Clemens Wächter, Knut Müller-Caspary, Thorsten Mehrtens, Andreas Rosenauer, Ines Pietzonka, Martin Strassburg, and Josef Zweck. Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures. physica status solidi (b), 253:140-144, 2016. ISSN: 1521-3951. [doi:10.1002/pssb.201552288] Keyword(s): DPC, Efficiency droop, EFTEM, electric fields, GaN, HAADF, IMFP, MQW, QCSE, quantification, STEM.



3. H. Ryll, M. Simson, R. Hartmann, P. Holl, M. Huth, S. Ihle, Y. Kondo, P. Kotula, A. Liebel, K. Müller-Caspary, A. Rosenauer, R. Sagawa, J. Schmidt, H. Soltau, and L. Strüder. A pnCCD-based, fast direct single electron imaging camera for TEM and STEM. Journal of Instrumentation, 11(04):P04006, 2016. [WWW]



4. P. S. Sokolov, M. Yu. Petrov, T. Mehrtens, K. Müller-Caspary, A. Rosenauer, D. Reuter, and A. D. Wieck. Reconstruction of nuclear quadrupole interaction in (In,Ga)As/GaAs quantum dots observed by transmission electron microscopy. Phys. Rev. B, 93:045301, January 2016. [doi:10.1103/PhysRevB.93.045301]



5. Dan Zhou, Knut Müller-Caspary, Wilfried Sigle, Florian F. Krause, Andreas Rosenauer, and van Aken Peter. Sample tilt effects on atom column position determination in ABF-STEM imaging. Ultramicroscopy, 160:110-117, 2016. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.10.008] Keyword(s): Annular bright-field imaging.



6. C. Mahr, K. Müller-Caspary, T. Grieb, M. Schowalter, T. Mehrtens, F.F. Krause, D. Zillmann, and A. Rosenauer. Theoretical study of precision and accuracy of strain analysis by nano-beam electron diffraction. Ultramicroscopy, 158(0):38-48, 2015. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.06.011] Keyword(s): Strain measurement.



7. Knut Müller-Caspary, Andreas Oelsner, and Pavel Potapov. Two-dimensional strain mapping in semiconductors by nano-beam electron diffracion employing a delay-line detector. Applied Physics Letters, 107:072110, 2015. [doi:10.1063/1.4927837]



8. Tim Grieb, Knut Müller, Emmanuel Cadel, Andreas Beyer, Marco Schowalter, Etienne Talbot, Kerstin Volz, and Andreas Rosenauer. Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM. Microscopy and Microanalysis, 20:1740, 9 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614013051]



9. Duggi V. Sridhara Rao, Ramachandran Sankarasubramanian, Kuttanellore Muraleedharan, Thorsten Mehrtens, Andreas Rosenauer, and Dipankar Banerjee. Quantitative Strain and Compositional Studies of InGaAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques. Microscopy and Microanalysis, 20:1262-1270, 8 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614000762]



10. Malte Fandrich, Thorsten Mehrtens, Timo Aschenbrenner, Thorsten Klein, Martina Gebbe, Stephan Figge, Carsten Kruse, Andreas Rosenauer, and Detlef Hommel. Nitride based heterostructures with Ga- and N-polarity for sensing applications. Journal of Crystal Growth, 370(0):68-73, 2013. ISSN: 0022-0248. [WWW] Keyword(s): A1. Characterization, A3. Metalorganic vapor phase epitaxy, A3. Molecular beam epitaxy, B1. Nitrides, B3. Sensors.



11. Tim Grieb, Knut Müller, Rafael Fritz, Vincenzo Grillo, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Quantitative chemical evaluation of dilute GaNAs using ADF STEM: Avoiding surface strain induced artifacts. Ultramicroscopy, 129(0):1-9, 2013. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2013.02.006] Keyword(s): Quantitative.



12. K Müller, H Ryll, I Ordavo, M Schowalter, J Zweck, H Soltau, S Ihle, L Strüder, K Volz, P Potapov, and A Rosenauer. STEM strain analysis at sub-nanometre scale using millisecond frames from a direct electron read-out CCD camera. Journal of Physics: Conference Series, 471(1):012024, 2013. [WWW]



13. M Tewes, F F Krause, K Müller, P Potapov, M Schowalter, T Mehrtens, and A Rosenauer. Quantitative Composition Evaluation from HAADF-STEM in GeSi/Si Heterostructures. Journal of Physics: Conference Series, 471(1):012011, 2013. [WWW]



14. Julia Wehling, Eike Volkmann, Tim Grieb, Andreas Rosenauer, Michael Maas, Laura Treccani, and Kurosch Rezwan. A critical study: Assessment of the effect of silica particles from 15 to 500Â nm on bacterial viability. Environmental Pollution, 176(0):292-299, 2013. ISSN: 0269-7491. [WWW] [doi:10.1016/j.envpol.2013.02.001] Keyword(s): Silica.



15. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging and improved STEM-HAADF strain state analysis. Ultramicroscopy, 117:15-23, 2012. [WWW] [doi:10.1016/j.ultramic.2012.03.014]



16. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy. Microscopy and Microanalysis, 18(05):995-1009, 2012. [doi:10.1017/S1431927612001274]



17. Knut Müller, Henning Ryll, Ivan Ordavo, Sebastian Ihle, Lothar Strüder, Kerstin Volz, Josef Zweck, Heike Soltau, and Andreas Rosenauer. Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device. Applied Physics Letters, 101(21):212110, 2012. [WWW] [doi:10.1063/1.4767655] Keyword(s): CCD image sensors, electron detection, electron probes, nanostructured materials, scanning-transmission electron microscopy, semiconductor materials, strain measurement.



18. Marco Schowalter, Knut Müller, and Andreas Rosenauer. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III--V and II--VI semiconductors. Acta Crystallographica Section A, 68(1):68-76, January 2012. [doi:10.1107/S010876731103777] Keyword(s): scattering factors, static atomic displacements, modified atomic scattering amplitudes, correction factor.



19. Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Gerd Kunert, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. A structural investigation of highly ordered catalyst- and mask-free GaN nanorods. Nanotechnology, 22(2):025603, 2011. [WWW]



20. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging. Journal of Physics: Conference Series, 326(1):012033, 2011. [WWW]



21. V. Grillo, K. Müller, K. Volz, F. Glas, T. Grieb, and A. Rosenauer. Strain, composition and disorder in ADF imaging of semiconductors. Journal of Physics: Conference Series, 326(1):012006, 2011. [WWW]



22. Robert Imlau, Knut Müller, Oleg Rubel, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing. Journal of Physics: Conference Series, 326(1):012038, 2011. [WWW]



23. Knut Müller, Marco Schowalter, Andreas Rosenauer, Dongzhi Hu, Daniel M. Schaadt, Michael Hetterich, Philippe Gilet, Oleg Rubel, Rafael Fritz, and Kerstin Volz. Atomic scale annealing effects on InGaNAs studied by TEM three-beam imaging. Physical Review B, 84(4):045316, July 2011. [doi:10.1103/PhysRevB.84.045316]



24. K. Müller, M. Schowalter, O. Rubel, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, R. Fritz, K. Volz, and A. Rosenauer. TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells. Journal of Physics: Conference Series, 326(1):012026, 2011. [WWW]



25. Angelika Pretorius, Thomas Schmidt, Timo Aschenbrenner, Tomohiro Yamaguchi, Christian Kübel, Knut Müller, Heiko Dartsch, Detlef Hommel, Jens Falta, and Andreas Rosenauer. Microstructural and compositional analyses of GaN based nanostructures. Physica Status Solidi, 248:1822-1836, 2011. [doi:10.1002/pssb.201147175]



26. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Parlapalli Venkata Satyam, Stephanie Bley, Christian Tessarek, Detlef Hommel, Katrin Sebald, Moritz Seyfried, Jürgen Gutowski, Adrian Avramescu, Karl Engl, and Stephan Lutgen. Composition mapping in InGaN by scanning transmission electron microscopy. Ultramicroscopy, 111:1316-1327, 2011. ISSN: 0304-3991. [WWW] Keyword(s): Quantitative STEM, Composition determination, Multislice simulation, Frozen lattice simulation.



27. C. Tessarek, S. Figge, T. Aschenbrenner, S. Bley, A. Rosenauer, M. Seyfried, J. Kalden, K. Sebald, J. Gutowski, and D. Hommel. Strong phase separation of strained InGaN layers due to spinodal and binodal decomposition: Formation of stable quantum dots. Phys. Rev. B, 83:115316, March 2011. [doi:10.1103/PhysRevB.83.115316]



28. T. Aschenbrenner, H. Dartsch, C. Kruse, M. Anastasescu, M. Stoica, M. Gartner, A. Pretorius, A. Rosenauer, Thomas Wagner, and D. Hommel. Optical and structural characterization of AlInN layers for optoelectronic applications. J. Appl. Phys., 108(6):063533, 2010. [WWW] [doi:10.1063/1.3467964] Keyword(s): aluminium compounds, annealing, distributed Bragg reflectors, extinction coefficients, III-V semiconductors, indium compounds, MOCVD coatings, refractive index, semiconductor epitaxial layers, surface morphology, surface roughness, transmission electron microscopy, vapour phase epitaxial growth, wide band gap semiconductors, X-ray diffraction.



29. V.C. Srivastava, K.B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, J. Eckert, A. Rosenauer, and H.-W. Zoch. Microstructure and mechanical properties of partially amorphous Al85Y8Ni5Co2 plate produced by spray forming. Materials Science and Engineering: A, 527(10–11):2747-2758, 2010. ISSN: 0921-5093. [WWW] [doi:10.1016/j.msea.2010.01.057] Keyword(s): Spray deposition.



30. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Size effects and strain state of Ga(1-x)In(x)As/GaAs multiple quantum wells: Monte Carlo study. Phys. Rev. B, 78:165326, October 2008. [doi:10.1103/PhysRevB.78.165326]



31. Radian Popescu, Erich Müller, Matthias Wanner, Dagmar Gerthsen, Marco Schowalter, Andreas Rosenauer, Artur Böttcher, Daniel Löffler, and Patrick Weis. Increase of the mean inner Coulomb potential in Au clusters induced by surface tension and its implication for electron scattering. Phys. Rev. B, 76(23):235411, December 2007. [doi:10.1103/PhysRevB.76.235411]



32. EHM Rossi, A. Rosenauer, and G. Van Tendeloo. Influence of strain, specimen orientation and background estimation on composition evaluation of InAs/GaAs by TEM. Philosophical Magazine, 87(29):4461-4473, 2007. [WWW] [doi:10.1080/14786430701551905]



33. K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, and A. Rosenauer. Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells. J. Appl. Phys., 102(8):083504, 2007. [WWW] [doi:10.1063/1.2794739] Keyword(s): annealing, gallium arsenide, gallium compounds, III-V semiconductors, impurity distribution, indium compounds, photoluminescence, Rutherford backscattering, semiconductor epitaxial layers, semiconductor heterojunctions, semiconductor quantum wells, transmission electron microscopy.



34. A. Rosenauer, D. Gerthsen, and V. Potin. Strain state analysis of InGaN/GaN - sources of error and optimized imaging conditions. Phys. Status Solidi A, 203(1):176-184, January 2006. [doi:10.1002] Keyword(s): InGaN/GaN, In, Ga, N, optimised imaging conditions, optimized imaging conditions, aberrations, strain, strain state.



35. Meng-Ku Chen, Yung-Chen Cheng, Jiun-Yang Chen, Cheng-Ming Wu, C.C. Yang, Kung-Jen Ma, Jer-Ren Yang, and Andreas Rosenauer. Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells. Journal of Crystal Growth, 279(1-2):55-64, 2005. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2005.02.018] Keyword(s): A1. Segregation.



36. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron scattering in strained In(x)Ga(1-x)As. Phys. Rev. B, 72:085326, August 2005. [doi:10.1103/PhysRevB.72.085326] Keyword(s): structure factor, strain, InGaAs, In, Ga, As, first-principles calculation, electron scattering.



37. E. Roventa, G. Alexe, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigations of spatial correlation of CdSe/ZnSe quantum dot stacks grown by molecular beam epitaxy. Journal of Crystal Growth, 278(1-4):316-319, 2005. Note: 13th International Conference on Molecular Beam Epitaxy. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2005.01.017] Keyword(s): A3. Migration enhanced epitaxy.



38. Yung-Chen Cheng, En-Chiang Lin, Cheng-Ming Wu, C.C. Yang, Jer-Ren Yang, Andreas Rosenauer, Kung-Jen Ma, Shih-Chen Shi, L.C. Chen, Chang-Chi Pan, and Jen-Inn Chyi. Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions. Applied Physics Letters, 84(14):2506-2508, 2004. ISSN: 0003-6951. [doi:10.1063/1.1690872] Keyword(s): III-V semiconductors, gallium compounds, indium compounds, photoluminescence, quantum confined Stark effect, semiconductor doping, semiconductor quantum wells, silicon, wide band gap semiconductors, 6172Vv, 6865Fg, 7855Cr, 7867De.



39. R. Otto, H. Kirmse, I. Häusler, W. Neumann, A. Rosenauer, D. Bimberg, and L. Muller-Kirsch. Determination of composition and strain field of a III/V quaternary quantum dot system. Applied Physics Letters, 85(21):4908-4910, 2004. ISSN: 0003-6951. [doi:10.1063/1.1823602] Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, internal stresses, nucleation, semiconductor quantum dots, transmission electron microscopy, 6835Gy, 6837Lp, 6865Hb.



40. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668-1683, 2003. ISSN: 1610-1642. [doi:10.1002/pssc.200303129] Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.



41. D. Litvinov, A. Rosenauer, D. Gerthsen, and H. Preis. Electron microscopy investigation of the defect configuration in CdSe/ZnSe quantum dot structures. Philosophical Magazine A, 82(7):1361-1380, 2002. [doi:10.1080/01418610208235677]



42. S. Kret, P. Ruterana, A. Rosenauer, and D. Gerthsen. Extracting Quantitative Information from High Resolution Electron Microscopy. physica status solidi (b), 227(1):247-295, 2001. ISSN: 1521-3951. [doi:10.1002/1521-3951(200109)227:1<247::AID-PSSB247>3.0.CO;2-F] Keyword(s): 68.35.Dv, 68.37.Lp, 68.55.Nq, 68.65.-k, S7.12, S7.14, S8.13.



43. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in In(x)Ga(1-x)As/GaAs$ Stranski-Krastanow layers}. Phys. Rev. B, 64(24):245334, December 2001. [doi:10.1103/PhysRevB.64.245334]



44. A. Rosenauer, W. Oberst, D. Litvinov, D. Gerthsen, A. Förster, and R. Schmidt. Structural and chemical investigation of $In_{0.6}Ga_{0.4}As$ Stranski-Krastanow layers buried in GaAs by transmission electron microscopy. Phys. Rev. B, 61(12):8276-8288, March 2000. [doi:10.1103/PhysRevB.61.8276]



45. R. Engelhardt, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, and D. Gerthsen. Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures. Journal of Applied Physics, 86(10):5578-5583, 1999. ISSN: 0021-8979. [doi:10.1063/1.371563] Keyword(s): II-VI semiconductors, MOCVD coatings, cadmium compounds, excitons, plastic deformation, quantum well lasers, zinc compounds, 4255Px, 4260By, 7135-y, 8530Vw.



46. A. Rosenauer and D. Gerthsen. Composition evaluation by the lattice fringe analysis method using defocus series. Ultramicroscopy, 76(1):49-60, 1999.



47. A. Rosenauer and D. Gerthsen. Atomic Scale Strain and Composition Evaluation from High-Resolution Transmission Electron Microscopy Images. In Peter W. Hawkes, editor, , volume 107 of Advances in Imaging and Electron Physics, pages 121-230. Elsevier, 1999. ISSN: 1076-5670. [WWW] [doi:10.1016/S1076-5670(08)70187-3]



48. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Förster. Composition evaluation by lattice fringe analysis. Ultramicroscopy, 72:121-133, 1998. [doi:10.1016/S0304-3991(98)00002-3]



49. M. Hetterich, M. Grün, W. Petri, C. Märkle, C. Klingshirn, A. Wurl, U. Fischer, A. Rosenauer, and D. Gerthsen. Elastic and plastic strain relaxation in ultrathin CdS/ZnS quantum-well structures grown by molecular-beam epitaxy. Phys. Rev. B, 56:12369-12374, November 1997. [doi:10.1103/PhysRevB.56.12369]



50. Marcus J. Kastner, Gabriella Leo, Doris Brunhuber, Andreas Rosenauer, Herbert Preis, Berthold Hahn, Markus Deufel, and Wolfgang Gebhardt. Investigations on strain relaxation of ZnS(x)Se(1−x) layers grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 172(1-2):64-74, 1997. ISSN: 0022-0248. [WWW] [doi:10.1016/S0022-0248(96)00722-1]



51. A. Rosenauer, U. Fischer, D. Gerthsen, and A. Forster. Composition evaluation of In(x)Ga(1-x)As Stranski-Krastanow-island structures by strain state analysis. Applied Physics Letters, 71(26):3868-3870, 1997. [WWW] [doi:10.1063/1.120528] Keyword(s): indium compounds, gallium arsenide, III-V semiconductors, island structure, transmission electron microscopy, lattice constants, molecular beam epitaxial growth, semiconductor epitaxial layers, finite element analysis, segregation, semiconductor growth.



52. A. Rosenauer, T. Remmele, D. Gerthsen, K. Tillmann, and A. Förster. Atomic scale strain measurements by the digital analysis of transmission electron microscopic lattice images. Optik (Stuttgart), 105(3):99-107, 1997. Note: Eng. ISSN: 0030-4026. [WWW] Keyword(s): Experimental study, TEM, Electron microscopy, High-resolution methods, Measuring methods, Stress analysis, Layer thickness, Crystals, Semiconductor materials.



53. Marcus J. Kastner, Berthold Hahn, Claus Auchter, Markus Deufel, Andreas Rosenauer, and Wolfgang Gebhardt. Structural characterization and MOVPE growth of ZnCdSe and ZnSSe layers, quantum wells and superlattices. Journal of Crystal Growth, 159(1-4):134-137, 1996. Note: Proceedings of the seventh international conference on II-VI compouds and devices. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(95)00761-X]



54. K. Tillmann, A. Thust, M. Lentzen, P. Swiatek, A. Förster, K. Urban, W. Laufs, D. Gerthsen, T. Remmele, and A. Rosenauer. Determination of segregation, elastic strain and thin-foil relaxation in In(x)Ga(1-x)As islands on GaAs(001) by high resolution transmission electron microscopy. Philosophical Magazine Letters, 74(5):309-315, 1996. [doi:10.1080/095008396180029]



55. W.S. Kuhn, A. Lusson, B. Qu'Hen, C. Grattepain, H. Dumont, O. Gorochov, S. Bauer, K. Wolf, M. Wörz, T. Reisinger, A. Rosenauer, H.P. Wagner, H. Stanzl, and W. Gebhardt. The metal organic vapour phase epitaxy of ZnTe: III. Correlation of growth and layer properties. Progress in Crystal Growth and Characterization of Materials, 31(1-2):119-177, 1995. ISSN: 0960-8974. [WWW] [doi:10.1016/0960-8974(95)00018-6]



56. S. Lankes, B. Hahn, C. Meier, F. Hierl, M. Kastner, A. Rosenauer, and W. Gebhardt. Photoreflectance measurements on ZnSe/ZnS0.25Se0.75SQW. physica status solidi (a), 152(1):123-131, 1995. ISSN: 1521-396X. [doi:10.1002/pssa.2211520113]



57. K Wolf, S Jilka, A Rosenauer, G Schutz, H Stanzl, T Reisinger, and W Gebhardt. High-resolution X-ray diffraction investigations of epitaxially grown ZnSe/GaAs layers. Journal of Physics D: Applied Physics, 28(4A):A120, 1995. [WWW]



58. M. Grün, M. Hetterich, C. Klingshirn, A. Rosenauer, J. Zweck, and W. Gebhardt. Strain relief and growth modes in wurtzite type epitaxial layers of CdSe and CdS and in CdSe/CdS superlattices. Journal of Crystal Growth, 138(1-4):150-154, 1994. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(94)90797-8]



59. S. Bauer, A. Rosenauer, P. Link, W. Kuhn, J. Zweck, and W. Gebhardt. Misfit dislocations in epitaxial ZnTe/GaAs (001) studied by {HRTEM}. Ultramicroscopy, 51(1-4):221-227, 1993. ISSN: 0304-3991. [WWW] [doi:10.1016/0304-3991(93)90148-Q]

1. C. Mahr, K. Müller-Caspary, T. Grieb, F. F. Krause, M. Schowalter, A. Lackmann, A. Wittstock, and A. Rosenauer. Measurement of strain in nanoporous gold using nano-beam electron diffraction. In European Microscopy Congress 2016 (EMC 2016), Lyon (F), [Poster IM06-352], 2016.



2. C. Mahr, K. Müller-Caspary, A. Oelsner, A. Rosenauer, and P. Potapov. STEM strain measurement from a stream of diffraction patterns recorded on a pixel-free delay-line detector [Talk]. In EMAG conference 2016, Durham, UK, 2016.



3. Knut Müller-Caspary, Thorsten Mehrtens, Marco Schowalter, Tim Grieb, Andreas Rosenauer, Florian F. Krause, Christoph Mahr, and Pavel Potapov. ImageEval. A software for the processing, evaluation and acquisition of (S)TEM images. In European Microscopy Congress 2016, Lyon (F), [Poster IM03-286], 2016. [doi:10.1002/EMC2016.0677]



4. Knut Müller-Caspary, Andreas Oelsner, and Pavel Potapov. STEM Strain Measurement From a Stream of Diffraction Patterns Recorded on a Pixel-Free Delay-Line Detector. In Microscopy and Microanalysis 2016, Columbus (OH/USA), [Poster], July 24-28th 2016.



5. Knut Müller-Caspary, Andreas Oelsner, Pavel Potapov, and Thomas Schmidt. Analysis of strain and composition in GeSi/Si heterostructures by electron microscopy. In European Microscopy Congress 2016, Lyon (F), [Talk MS03-OP239], 2016. [doi:10.1002/EMC2016.0311]



6. Knut Müller-Caspary, Oliver Oppermann, Tim Grieb, Andreas Rosenauer, Marco Schowalter, Florian F. Krause, Thorsten Mehrtens, Pavel Potapov, Andreas Beyer, and Kerstin Volz. Angle-resolved Scanning Transmission Electron Microscopy (ARSTEM) for materials analysis. In European Microscopy Congress 2016, Lyon (F), [Poster IM06-350], 2016. [doi:10.1002/EMC2016.0259]



7. Dan Zhou, Knut Müller-Caspary, Wilfried Sigle, Florian F. Krause, Andreas Rosenauer, and Peter van Aken. Sample tilt effects on atom column position determination in ABF-STEM imaging. In Microscopy and Microanalysis Conference M&M 2016, Columbus (Ohio, USA), session A15.1, [Talk 19], July 24-28th 2016.



8. T. Grieb, D. Carvalho, K. Müller-Caspary, M. Schowalter, C. Mahr, A. Beyer, A. Hyra, T. Ben, F. M. Morales, R. Garcia, K. Volz, B. Daudin, and A. Rosenauer. Quantitative nano-beam electron diffraction: Measuring strain and electric fields. In Microscopy Conference MC 2015, Göttingen (D), Session IM 2 [Talk], September 6-11th 2015.



9. C. Mahr, K. Müller, M. Schowalter, T. Mehrtens, T. Grieb, F.F. Krause, D. Erben, and A. Rosenauer. Analysis and improvement of precision and accuracy of strain measurements by convergent nano-beam electron diffraction (SANBED). In Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK) [Talk], volume Session 3b, Tue, March 31st, 2015.



10. C. Mahr, K. Müller-Caspary, T. Grieb, T. Mehrtens, M. Schowalter, F. F. Krause, D. Zillmann, and A. Rosenauer. Theoretical study of precision and accuracy of strain analysis by nano-beam electron diffraction (SANBED). In Microscopy Conference MC 2015, Göttingen (D), session MS 2, [Poster MS2.P023], September 6-11th 2015.



11. Knut Müller, Andreas Oelsner, Andreas Rosenauer, and Pavel Potapov. STEM strain measurement from a stream of diffraction patterns recorded on a pixel-free delay-line detector. In Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK) [Poster], volume Poster Session 2, Poster P 2.5 (Tue, March 31st), 2015.



12. K. Müller-Caspary, Andreas Oelsner, Andreas Rosenauer, and Pavel Potapov. STEM strain measurement from a stream of diffraction patterns recorded on a pixel-free delay-line detector. In Microscopy Conference MC 2015, Göttingen (D), session IM 1, [Poster IM1.P029], September 6-11th 2015.



13. A. Rosenauer, K. Müller-Caspary, M. Schowalter, T. Grieb, F. F. Krause, and T. Mehrtens. Analysis of composition and strain in semiconductor nanostructures by quantitative STEM using HAADF intensity, angular multi-range analysis and imaging STEM. In Microscopy Conference MC 2015, Göttingen (D), Session MS 2 [Invited Talk], September 6-11th 2015.



14. C. Mahr, K. Müller, D. Erben, M. Schowalter, J. Zweck, K. Volz, and A. Rosenauer. Strain Analysis by Nano-Beam Electron Diffraction (SANBED) in semiconductor nanostructures. In 18th International Microscopy Congress (IMC) [Poster IT-9-P-3029], 2014.



15. K. Müller, H. Ryll, I. Ordavo, S. Ihle, M. Huth, M. Simson, J. Zweck, K. Volz, H. Soltau, P. Potapov, L. Strüder, M. Schowalter, C. Mahr, D. Erben, and A. Rosenauer. Strain Analyisis by Nano-Beam Electron Diffraction using millisecond frames of a direct electron pnCCD detector. In 18th International Microscopy Congress (IMC) [Talk MS-8-O-3268], 2014.



16. Knut Müller, Henning Ryll, Ivan Ordavo, Sebastian Ihle, Martin Huth, Martin Simson, Josef Zweck, Kerstin Volz, Heike Soltau, Andreas Rosenauer, Pavel Potapov, Marco Schowalter, Lothar Strüder, Christoph Mahr, and Daniel Erben. Strain Analysis from Nano-beam Electron Diffraction Patterns Recorded on Direct Electron Charge-coupled Devices. In Microscience Microscopy Congress, MMC 2014, Manchester (UK), July, 2014 [invited talk PS3.1.4], 2014.



17. Tim Grieb, Knut Müller, Emanuel Cadel, Rafael Fritz, Nils Neugebohrn, Etienne Talbot, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Chemical composition analysis of dilute GaNAs and InGaNAs by high-angle annular dark field STEM. In International Conference on Electron Microscopy and XXIV Annual Meeting of the Electron Microscope Society of India (EMSI) 2013, Kolkata (India) [Talk], 2013.



18. T. Grieb, K. Müller, R. Fritz, V. Grillo, M. Schowalter, K. Volz, and A. Rosenauer. Avoiding surface strain field induced artifacts in 2d chemical mapping of dilute GaNAs quantum wells by HAADF STEM. In Proceedings of the Microscopy Conference 2013 (MC 2013, Regensburg) Germany [Poster], volume 1: Instrumentation and Methods, pages IM.1.P008, 2013.



19. Knut Müller, Henning Ryll, Ivan Ordavo, Marco Schowalter, Josef Zweck, Heike Soltau, Sebastian Ihle, Lothar Strüder, Kerstin Volz, Pavel Potapov, and Andreas Rosenauer. STEM strain analysis at sub-nanometre scale using millisecond frames of a direct electron read-out CCD camera. In Microscopy of Semiconducting Materials 2013 (MSM XVIII),Oxford (UK) [Talk], volume G: Scanning Electron and Ion Beam Techniques, 2013.



20. K. Müller, H. Ryll, I. Ordavo, D. Zillmann, M. Schowalter, J. Zweck, H. Soltau, S. Ihle, L. Strüder, K. Volz, P. Potapov, and A. Rosenauer. Strain Analysis by Nano-Beam Electron Diffraction (SANBED): Present performance and future prospects. In Proceedings of the Microscopy Conference 2013 (MC 2013, Regensburg) Germany [Talk], volume 1: Instrumentation and Methods, pages IM.1.004, 2013.



21. M. Qi, W. A. O'Brien, C. A. Stephenson, V. Patel, N. Cao, B. J. Thibeault, T. Kosel, M. Schowalter, A. Rosenauer, V. Protasenko, H. Xing, and M. A. Wistey. Stability study of highly tensile strained Ge for optical device appliations. In Conf. Proceeding. 55th electronic material conference (EMC 2013), 2013.



22. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A method to avoid strain field induced artifacts in 2D chemical mapping of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis [Talk 595], volume 18, pages 1028-1029, 2012. [doi:10.1017/S143192761200699X]



23. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A new method for true 2d chemical mapping: strain-field unaffected evaluation of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis (M&M) conference 2012, Phoenix (USA) [Poster], 2012.



24. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain analysis by nano-beam electron diffraction (SANBED) in semiconductor nanostructures [Invited talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, pages 36, 2012. Keyword(s): SANBED.



25. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor nanostructures by convergent electron nanoprobe diffraction [Talk]. In Verhandlungen der Deutschen Physikalischen Gesellschaft, volume 47, pages 312, 2012.



26. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Rafael Fritz, and Kerstin Volz. Measurement of Composition and Strain by Scanning Transmission Electron Microscopy. In Microscopy and Microanalysis, Phoenix (USA) [Invited talk], 2012.



27. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Alexander Würfel, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel, Lars Hoffmann, Andreas Hangleiter, S. A. Gerstl, Pyuck-Pa Choi, and Dirk Raabe. Measurement of composition and strain in InGaN quantum dots by STEM [Plenary talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, EMSI2012, Bengaluru (Indien), July 4, 2012 [invited talk], pages 25, 2012.



28. A. Rosenauer, K. Müller, T. Mehrtens, M. Schowalter, J. Zweck, R. Fritz, and K. Volz. Measurement of Composition and Strain by STEM. In International Conference on Extended Defects in Semiconductors, EDS 2012, Thessaloniki (Greece) [Invited Talk], 2012.



29. Andreas Rosenauer, Knut Müller, Thorsten Mehrtens, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Measurement of composition and strain by STEM. In Microscopy and Microanalysis 2012 (M&M2012), Phoenix, Arizona, July 29-August 2 [Invited talk], volume 18, pages 1804-1805, 2012. [doi:10.1017/S1431927612010872]



30. T. Grieb, K. Müller, O. Rubel, R. Fritz, M. Schowalter, K. Volz, and A. Rosenauer. STEM strain state analysis in combination with HAADF intensity evaluation to determine chemical composition of GaNAs quantum wells. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel), volume 1: Instrumentation and Methods, pages IM2.P120, 2011. DGE - German Society for Electron Microscopy.



31. V. Grillo, K. Müller, C. Frigeri, K. Volz, F. Glas, and A. Rosenauer. Strain, composition and disorder in ADF imaging of semiconductors. In MSM 2011 Cambridge, U.K. [talk] talk D10, 2011.



32. L. Hoffmann, H. Bremer, H. Jönen, U. Rossow, J. Thalmair, J. Zweck, M. Schowalter, A. Rosenauer, and A. Hangleiter. Strain Relaxation Mechanisms in Green Emitting GaInN/GaN Laser Diode Structures. In ICNS 9 Glasgow, U.K., 2011 [talk] talk B4.3, 2011.



33. Lars Hoffmann, Heiko Bremers, Holger Joenen, Uwe Rossow, Johannes Thalmair, Josef Zweck, Marco Schowalter, Andreas Rosenauer, and Andreas Hangleiter. Strain Relaxation Mechanisms in Green Emitting GaInN/GaN Laser Diode Structures. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.



34. K. Müller, M. Schowalter, O. Rubel, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, R. Fritz, K. Volz, and A. Rosenauer. TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells. In MSM 2011 Cambridge, U. K. [Talk] talk B4, 2011.



35. Marco Schowalter, Thorsten Mehrtens, and Andreas Rosenauer. The effect of strain on mean square displacement in wurtzite InGaN. In International Microscopy Congress (IMC17), Rio de Janeiro (Brazil) [Poster presentation], 2010.



36. H. Dartsch, S. Figge, T. Aschenbrenner, A. Pretorius, A. Rosenauer, and D. Hommel. Strain compensated AlGaN/GaN-Bragg-reflectors with high Al content grown by MOVPE. In IC-MOVPE, 1.-6. June 2008, 2008.



37. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. Ab initio computation of 002 structure factors for electron scattering in strained InGaAs. In Proceedings of DFTEM, Vienna (2006), 2006.



38. A. Rosenauer, M. Schowalter, F. Glas, and D. Lamoen. First-principles calculations of 002 structure factors for electron diffraction in strained In(x)Ga(1-x)As. In Springer Proceedings in Physics 107, 151 (2005), ISBN: 3.540-31914-X, 2005.



39. A. Rosenauer and D. Gerthsen. Optimum imaging conditions for strain state analysis of InGaN/GaN heterostructures. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 103-104, 2004.



40. M. Schowalter, A. Rosenauer, D. Lamoen, and D. Gerthsen. Strain state analysis of InGAAs/GaAs heterostructures: Elastic relaxation in cross section and cleaved specimen,. In Proceedings of the 13th European Microscopy Congress, Antwerp, Belgium, August 22-27, 2004, Vol. 1, 129-130, 2004.



41. M. Schowalter, P. Pfundstein, B. Neubauer, A. Rosenauer, D. Gerthsen, T. Stephan, H. Kalt, A. Allam, B. Schneller, O. Schön, and M. Heuken. Composition of InGaN:In distribution and influence of lattice strain. In Microcopy of Semiconducting Materials 2001, Oxford, UK, 25-29 March 2001, Inst. Phys. Conf. Ser. 169, 273-276 Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (2001), 2001.



42. A Rosenauer and D. Van Dyck. The effect of strain on chemically sensitive imaging with the (002) reflection in sphalerite type crystals. In 12th European Congress on Electron Microscopy (EUREM 12), July 9-14 2000, Brno, Czech Republic, Proceedings, Volume III, I 121, 2000.



43. A. Rosenauer, D. Gerthsen, and A. Förster. Composition evaluation of In(x)Ga(1-x)As island structures by lattice fringe analysis and strain state analysis,. In Electron Microscopy 1998, paper presented at ICEM14, Cancun, Mexico, 31 August to 4 Septermber 1998, Symposium S, Volume I , 613-14, 1998.



44. A. Rosenauer, T. Remmele, U. Fischer, A. Förster, and D. Gerthsen. Strain determination in mismatched semiconductor heterostructures by the digital analysis of lattice images,. In Microcopy of Semiconducting Materials 1997, Oxford, UK, 7-10 April 1997, Proceedings of the Royal Microscopical Society Conference, Editors A.G. Cullis, J.L. Hutchison, Institute of Physics Publishing (1997), 39-42, 1997.



45. M. Grün, M. Hetterich, C. Klingshirn, A Rosenauer, and W. Gebhardt. Decrease of the Phase Stability in II-VI Epitaxial Layers Due to Strain,. In II-VI Compounds and Semimagnetic Semiconductors. Third European Workshop on II-VI Compounds and Fourth International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors. Linz, Austria, 26-28 Sept 1994, Materials Science Forum Vols. 182-184, 235-238, 1995.



46. M. Grün, M. Hetterich, C. Klingshirn, A. Rosenauer, and W. Gebhardt. Strain-Relief in Wurtzite-Type CdS and CdSe Epitaxial Films,. In 22nd International Conference on The Physics of Semiconductors, Vol. 3, Vancouver, Canada, August 15-19, 1994 World Scientific 3, (1995) 2665, 1994.



47. S. Bauer, A. Rosenauer, J. Skorsetz, W. Kuhn, H.P. Wagner, J. Zweck, and W. Gebhardt. Investigation of Strained ZnTe Epilayers by High Resolution Electron Microscopy,. In Fifth international conference on II-VI-compounds, Tamano, Japan, 8-13 Sept 1991, J. Cryst Growth 117, 297-302, 1992.

1. Knut Müller. Strain Analysis by Nano-Beam Electron Diffraction (SANBED) [Lecture], August 2013.



2. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Kerstin Volz, Heike Soltau, Pavel Potapov, and Karl Engl. Strain Analysis by Nano-Beam Electron Diffraction [Invited talk], 2013.



3. Daniel Erben. Verspannungsmessungen in SiGe-basierten Feldeffekttransistoren mittels konvergenter Elektronenbeugung (Strain measurements in SiGe-based field effect transistors using convergent electron diffraction), August 2012.



4. Patrick Karasch. Messung von Verspannungen und piezoelektrischen Feldern in InGaN/GaN Quantentrögen mittels Elektronenbeugung (Measurement of strain and piezoelectric fields in InGaN/GaN quantum wells by electron diffraction), August 2012.



5. C. Mahr. Einfluss von Linsenfehlers auf Verspannungsmessungen aus CBED-Bildern im TEM (Impact of lens aberrations on strain measurements from CBED images in a TEM), July 2012.

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