1. Th. Schmidt, M. Siebert, J. I. Flege, S. Figge, S. Gangopadhyay, A. Pretorius, T.-L. Lee, J. Zegenhagen, L. Gregoratti, A. Barinov, A. Rosenauer, D. Hommel, and J. Falta. Mg and Si dopant incorporation and segregation in GaN. physica status solidi (b), 248(8):1810-1821, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201046531] Keyword(s): defects, dopants, photoelectron microscopy, segregation, X-ray standing waves.



2. Th. Schmidt, M. Siebert, A. Pretorius, S. Gangopadhyay, S. Figge, J.I. Flege, L. Gregoratti, A. Barinov, D. Hommel, and J. Falta. Spectro-microscopy of Si doped GaN films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 246(1):79-84, 2006. Note: Synchrotron Radiation and Materials Science Proceedings of the E-MRS 2005 Symposium O on Synchrotron Radiation and Materials Science E-MRS 2005 Symposium O. ISSN: 0168-583X. [WWW] [doi:10.1016/j.nimb.2005.12.018] Keyword(s): Photoemission microscopy.



3. M. Schowalter, A. Rosenauer, and D. Gerthsen. Influence of surface segregation on the optical properties of semiconductor quantum wells. Applied Physics Letters, 88(11):111906-111906-3, 2006. ISSN: 0003-6951. [doi:10.1063/1.2184907] Keyword(s): III-V semiconductors, gallium arsenide, indium compounds, photoluminescence, semiconductor quantum wells, surface segregation, 6835Dv, 7855Cr, 7867De.



4. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668-1683, 2003. ISSN: 1610-1642. [doi:10.1002/pssc.200303129] Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.



5. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546-6552, 2002. ISSN: 0021-8979. [doi:10.1063/1.1516248] Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.

1. Marco Schowalter, Thorsten Mehrtens, Kristian Frank, Knut Müller, and Andreas Rosenauer. Analysis of semiconductor interfaces and surface segregation using the composition evaluation by lattice fringe analyis (CELFA) method. In Physics at surfaces and Interfaces (PSI), Puri (India) [Talk], 2009.

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