1. A. Rosenauer. TEM-Untersuchung von epitaktischen Grenzflächen in II-VI/II-V Heterostrukturen (Dissertation). Roderer-Verlag, Regensburg, 1996.

1. Knut Müller. Transmission electron microscopy of InGaNAs nanostructures using ab-initio structure factors for strain-relaxed supercells. PhD thesis, Universität Bremen, May 2011.

1. Jochen A. H. Dreyer, Suman Pokhrel, Johannes Birkenstock, Miguel G. Hevia, Marco Schowalter, Andreas Rosenauer, Atsushi Urakawa, Wey Yang Teoh, and Lutz Madler. Decrease of the required dopant concentration for [small delta]-Bi2O3 crystal stabilization through thermal quenching during single-step flame spray pyrolysis. CrystEngComm, 18:2046-2056, 2016. [doi:10.1039/C5CE02430G]



2. Andrea Kirsch, M. Mangir Murshed, Marco Schowalter, Andreas Rosenauer, and Thorsten M. Gesing. Nanoparticle Precursor into Polycrystalline Bi2Fe4O9: An Evolutionary Investigation of Structural, Morphological, Optical, and Vibrational Properties. The Journal of Physical Chemistry C, 120(33):18831-18840, 2016. [doi:10.1021/acs.jpcc.6b04773]



3. Florian F. Krause, Marco Schowalter, Tim Grieb, Knut Müller-Caspary, Thorsten Mehrtens, and Andreas Rosenauer. Effects of instrument imperfections on quantitative scanning transmission electron microscopy. Ultramicroscopy, 161:146-160, 2016. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2015.10.026] Keyword(s): TEM.



4. Knut Müller-Caspary, Florian F. Krause, Tim Grieb, Stefan Löffler, Marco Schowalter, Armand Béché, Vincent Galioit, Dennis Marquardt, Josef Zweck, Peter Schattschneider, Johan Verbeeck, and Andreas Rosenauer. Measurement of atomic electric fields and charge densities from average momentum transfers using scanning transmission electron microscopy. Ultramicroscopy, (in print), 2016. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2016.05.004] Keyword(s): TEM.



5. H. Ryll, M. Simson, R. Hartmann, P. Holl, M. Huth, S. Ihle, Y. Kondo, P. Kotula, A. Liebel, K. Müller-Caspary, A. Rosenauer, R. Sagawa, J. Schmidt, H. Soltau, and L. Strüder. A pnCCD-based, fast direct single electron imaging camera for TEM and STEM. Journal of Instrumentation, 11(04):P04006, 2016. [WWW]



6. Marc Sauerbrey, Jan Höcker, Meikel Wellbrock, Marco Schowalter, Jon-Olaf Krisponeit, Knut Müller-Caspary, Andreas Rosenauer, Gang Wei, Lucio Colombi Ciacchi, Jens Falta, and Jan Ingo Flege. Ultrasmooth Ru(0001) Films as Templates for Ceria Nanoarchitectures. Crystal Growth & Design, 16(8):4216-4224, 2016. [doi:10.1021/acs.cgd.6b00192]



7. Junjie Shi, Christoph Mahr, M. Mangir Murshed, Volkmar Zielasek, Andreas Rosenauer, Thorsten M. Gesing, Marcus Baumer, and Arne Wittstock. A versatile sol-gel coating for mixed oxides on nanoporous gold and their application in the water gas shift reaction. Catal. Sci. Technol., 6:5311-5319, 2016. [doi:10.1039/C5CY02205C]



8. Suman Pokhrel, Johannes Birkenstock, Arezoo Dianat, Janina Zimmermann, Marco Schowalter, Andreas Rosenauer, Lucio Colombi Ciacchi, and L. Madler. In situ high temperature X-ray diffraction, transmission electron microscopy and theoretical modeling for the formation of WO3 crystallites. CrystEngComm, 17:6985-6998, 2015. [doi:10.1039/C5CE00526D]



9. Dominik Heinz, Mohamed Fikry, Timo Aschenbrenner, Marco Schowalter, Tobias Meisch, Manfred Madel, Florian Huber, Matthias Hocker, Manuel Frey, Ingo Tischer, Benjamin Neuschl, Thorsten Mehrtens, Knut Müller, Andreas Rosenauer, Detlef Hommel, Klaus Thonke, and Ferdinand Scholz. GaN tubes with coaxial non- and semipolar GaInN quantum wells. Phys. Status Solidi (c), 11:648-651, 2014.



10. H. Kauko, B. O. Fimland, T. Grieb, A. M. Munshi, K. Müller, A. Rosenauer, and A. T. J. van Helvoort. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires. Journal of Applied Physics, 116(14):144303, 2014. [doi:10.1063/1.4896904]



11. A. Rath, J. K. Dash, R. R. Juluri, A. Ghosh, T. Grieb, M. Schowalter, F. F. Krause, K. Müller, A. Rosenauer, and P. V. Satyam. A study of the initial stages of the growth of Au-assisted epitaxial Ge nanowires on a clean Ge(100) surface. CrystEngComm, 16:2486-2490, 2014. [doi:10.1039/C3CE42254B]



12. Andreas Rosenauer, Florian F. Krause, Knut Müller, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. Phys. Rev. Lett., 113:096101, August 2014. [doi:10.1103/PhysRevLett.113.096101]



13. Duggi V. Sridhara Rao, Ramachandran Sankarasubramanian, Kuttanellore Muraleedharan, Thorsten Mehrtens, Andreas Rosenauer, and Dipankar Banerjee. Quantitative Strain and Compositional Studies of InGaAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques. Microscopy and Microanalysis, 20:1262-1270, 8 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614000762]



14. T Mehrtens, M Schowalter, D Tytko, P Choi, D Raabe, L Hoffmann, H Jönen, U Rossow, A Hangleiter, and A Rosenauer. Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-contrast. Journal of Physics: Conference Series, 471(1):012009, 2013. [WWW] [doi:10.1088/1742-6596/471/1/012009]



15. U. Rossow, A. Kruse, H. Jönen, L. Hoffmann, F. Ketzer, T. Langer, R. Buss, H. Bremers, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer. Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region. Journal of Crystal Growth, 370(0):105-108, 2013. ISSN: 0022-0248. [WWW] Keyword(s): A3. Low press. metalorganic vapor phase epitaxy, A3. Quantum wells, A3. Laser epitaxy, B1. Nitrides, B2. Semiconducting III-V materials.



16. Sarah Röhe, Kristian Frank, Andreas Schaefer, Arne Wittstock, Volkmar Zielasek, Andreas Rosenauer, and Marcus Bäumer. CO oxidation on nanoporous gold: A combined TPD and XPS study of active catalysts. Surface Science, 609(0):106-112, 2013. ISSN: 0039-6028. [WWW] [doi:10.1016/j.susc.2012.11.011] Keyword(s): Gold.



17. V.C. Srivastava, K.B. Surreddi, S. Scudino, M. Schowalter, V. Uhlenwinkel, A. Schulz, J. Eckert, A. Rosenauer, and H.-W. Zoch. Microstructural characteristics of spray formed and heat treated Al-(Y, La)-Ni-Co system. Journal of Alloys and Compounds, 578:471-480, 2013. ISSN: 0925-8388. [WWW] [doi:10.1016/j.jallcom.2013.06.159] Keyword(s): Spray forming.



18. Thorsten M. Gesing, Marco Schowalter, Claudia Weidenthaler, M. Mangir Murshed, Gwilherm Nenert, Cecilia B. Mendive, Mariano Curti, Andreas Rosenauer, J.-Christian Buhl, Hartmut Schneider, and Reinhard X. Fischer. Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons. J. Mater. Chem., 22:18814-18823, 2012. [doi:10.1039/C2JM33208F]



19. Jens A. Kemmler, Suman Pokhrel, Johannes Birkenstock, Marco Schowalter, Andreas Rosenauer, Nicolae Bârsan, Udo Weimar, and Lutz Mädler. Quenched, nanocrystalline In4Sn3O12 high temperature phase for gas sensing applications. Sensors and Actuators B: Chemical, 161(1):740-747, 2012. ISSN: 0925-4005. [WWW] [doi:10.1016/j.snb.2011.11.026] Keyword(s): Flame spray pyrolysis.



20. Thorsten Mehrtens, Stephanie Bley, Parlapalli Venkata Satyam, and Andreas Rosenauer. Optimization of the preparation of GaN-based specimens with low-energy ion milling for (S)TEM. Micron, 43(8):902-909, 2012. [WWW] Keyword(s): Scanning transmission electron microscopy, Focused ion beam, Argon ion milling, Low-energy ion milling, Stopping and range of ions in matter.



21. A. Rath, J. K. Dash, R. R. Juluri, M. Schowalter, K. Müller, A. Rosenauer, and P. V. Satyam. Nano scale phase separation in Au-Ge system on ultra clean Si (100) surfaces. Journal of Applied Physics, 111:104319, 2012. [WWW] [doi:10.1063/1.4721666]



22. Marco Schowalter, Andreas Rosenauer, and Kerstin Volz. Parameters for temperature dependence of mean-square displacements for B-, Bi- and Tl-containing binary III-V compounds. Acta Crystallographica Section A, 68(3):319-323, 2012. ISSN: 1600-5724. [doi:10.1107/S0108767312002681] Keyword(s): Debye-Waller factors, mean-square displacements, force constants, phonon density of states, phonon dispersion relations, density functional theory.



23. K. Sebald, M. Seyfried, S. Klembt, S. Bley, A. Rosenauer, D. Hommel, and C. Kruse. Strong coupling in monolithic microcavities with ZnSe quantum wells. Applied Physics Letters, 100(16):161104-161104-4, 2012. ISSN: 0003-6951. [doi:10.1063/1.4704188] Keyword(s): microcavity lasers, quantum well lasers, scanning electron microscopy, transmission electron microscopy, zinc compounds, 4255Px, 4255Sa.



24. T. Aschenbrenner, G. Kunert, W. Freund, C. Kruse, S. Figge, M. Schowalter, C. Vogt, J. Kalden, K. Sebald, A. Rosenauer, J. Gutowski, and D. Hommel. Catalyst free self-organized grown high-quality GaN nanorods. physica status solidi (b), 248(8):1787-1799, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147148] Keyword(s): MBE, MOVPE, nanorods, nitrides, TEM, III-V semiconductors.



25. J. K. Dash, A. Rath, R. R. Juluri, P. Santhana Raman, K. Müller, A. Rosenauer, and P. V. Satyam. DC heating induced shape transformation of Ge structures on ultra clean Si (5 5 12) surfaces. Journal of Physics: Condensed matter, 23:135002, 2011.



26. J. K. Dash, A. Rath, R. R. Juluri, P. Santhana Raman, K. Müller, M. Schowalter, R. Imlau, A. Rosenauer, and P. V. Satyam. Shape transformation of SiGe structures on ultra clean Si(5 5 7) and Si(5 5 12) surfaces. Journal of Physics: Conference Series, 326(1):012021, 2011. [WWW]



27. J. Falta, Th. Schmidt, S. Gangopadhyay, Chr. Schulz, S. Kuhr, N. Berner, J. I. Flege, A. Pretorius, A. Rosenauer, K. Sebald, H. Lohmeyer, J. Gutowski, S. Figge, T. Yamaguchi, and D. Hommel. Cleaning and growth morphology of GaN and InGaN surfaces. physica status solidi (b), 248(8):1800-1809, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201046574] Keyword(s): chemical analysis, scanning tunneling microscopy, quantum dots, X-ray photoemission spectroscopy.



28. Katharina Gries, Fabian Heinemann, Meike Gummich, Andreas Ziegler, Andreas Rosenauer, and Monika Fritz. Influence of the Insoluble and Soluble Matrix of Abalone Nacre on the Growth of Calcium Carbonate Crystals. Crystal Growth & Design, 11(3):729-734, 2011. [doi:10.1021/cg101240e]



29. Robert Imlau, Knut Müller, Oleg Rubel, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing. Journal of Physics: Conference Series, 326(1):012038, 2011. [WWW]



30. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S A Gerstl, Pyuck-Pa Choi, Dierk Raabe, and Andreas Rosenauer. A (S)TEM and atom probe tomography study of InGaN. Journal of Physics: Conference Series, 326(1):012029, 2011. ISSN: 1742-6596. [WWW]



31. Knut Müller, Marco Schowalter, Andreas Rosenauer, Dongzhi Hu, Daniel M. Schaadt, Michael Hetterich, Philippe Gilet, Oleg Rubel, Rafael Fritz, and Kerstin Volz. Atomic scale annealing effects on InGaNAs studied by TEM three-beam imaging. Physical Review B, 84(4):045316, July 2011. [doi:10.1103/PhysRevB.84.045316]



32. K. Müller, M. Schowalter, O. Rubel, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, R. Fritz, K. Volz, and A. Rosenauer. TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells. Journal of Physics: Conference Series, 326(1):012026, 2011. [WWW]



33. Angelika Pretorius, Thomas Schmidt, Timo Aschenbrenner, Tomohiro Yamaguchi, Christian Kübel, Knut Müller, Heiko Dartsch, Detlef Hommel, Jens Falta, and Andreas Rosenauer. Microstructural and compositional analyses of GaN based nanostructures. Physica Status Solidi, 248:1822-1836, 2011. [doi:10.1002/pssb.201147175]



34. A Rath, J K Dash, R R Juluri, A Rosenauer, and P V Satyam. Temperature-dependent electron microscopy study of Au thin films on Si (1 0 0) with and without a native oxide layer as barrier at the interface. Journal of Physics D: Applied Physics, 44(11):115301, 2011. [WWW]



35. Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Stephanie Bley, Parlapalli Venkata Satyam, Adrian Avramescu, Karl Engl, and Stephan Lutgen. 2D-composition mapping in InGaN without electron beam induced clustering of indium by STEM HAADF Z-contrast imaging. Journal of Physics: Conference Series, 326(1):012040, 2011. [WWW]



36. C. Tessarek, S. Figge, T. Aschenbrenner, S. Bley, A. Rosenauer, M. Seyfried, J. Kalden, K. Sebald, J. Gutowski, and D. Hommel. Strong phase separation of strained InGaN layers due to spinodal and binodal decomposition: Formation of stable quantum dots. Phys. Rev. B, 83:115316, March 2011. [doi:10.1103/PhysRevB.83.115316]



37. M Dries, B Gamm, K Schultheiss, A Rosenauer, R Schröder, and D Gerthsen. Object-wave Reconstruction by Carbon-Film-Based Zernike- and Hilbert-Phase Plate Microscopy: A Theoretical Study Not Restricted to Weak Phase Objects. Microscopy and Microanalysis, 16(Supplement S2):552-553, 2010. [doi:10.1017/S1431927610055121]



38. Thorsten M. Gesing, Marco Schowalter, Claudia Weidenthaler, Andreas Rosenauer, Hartmut Schneider, and Reinhard X. Fischer. Mullite-type (Bi${\sb 1{$-$\it x}}$Sr${\sb {\it x}} ){\sb 2}$Al${\sb 4}$O${\sb 9{$-$\it x}/2}$: HT-XRPD, TEM and XPS investigations. Acta Crystallographica Section A, 66(a1):s182-s183, September 2010. [doi:10.1107/S0108767310095887]



39. A. Schaefer, A. Sandell, L.E. Walle, V. Zielasek, M. Schowalter, A. Rosenauer, and M. Bäumer. Chemistry of thin film formation and stability during praseodymium oxide deposition on Si(111) under oxygen-deficient conditions. Surface Science, 604(15–16):1287-1293, 2010. ISSN: 0039-6028. [WWW] [doi:10.1016/j.susc.2010.04.016] Keyword(s): Praseodymium oxide.



40. Patrick Sonström, Johannes Birkenstock, Yulia Borchert, Laura Schilinsky, Peter Behrend, Katharina Gries, Knut Müller, Andreas Rosenauer, and Marcus Bäumer. Nanostructured Praseodymium Oxide: Correlation between phase transitions and catalytic activity. ChemCatChem, 2:694-704, 2010. [doi:10.1002/cctc.200900311]



41. Katharina Gries, Roland Kröger, Christian Kübel, Marco Schowalter, Monika Fritz, and Andreas Rosenauer. Correlation of the orientation of stacked aragonite platelets in nacre and their connection via mineral bridges. Ultramicroscopy, 109(3):230-236, 2009. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2008.10.023] Keyword(s): Nacre.



42. M. Schowalter, A. Rosenauer, J. T. Titantah, and D. Lamoen. Computation and parametrization of the temperature dependence of Debye-Waller factors for group IV, III-V and II-VI semiconductors. Acta Crystallogr., Sect. A, 65(1):5-17, January 2009. [doi:10.1107/S0108767308031437] Keyword(s): Debye-Waller factors, semiconductors, force constants, phonon densities of states.



43. M. Schowalter, A. Rosenauer, J. T. Titantah, and D. Lamoen. Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure. Acta Crystallogr., Sect. A, 65(3):227-231, May 2009. [doi:10.1107/S0108767309004966]



44. Jo Verbeeck, Peter Schattschneider, and Andreas Rosenauer. Image simulation of high resolution energy filtered TEM images. Ultramicroscopy, 109(4):350-360, 2009. ISSN: 0304-3991. [WWW] [doi:10.1016/j.ultramic.2009.01.003] Keyword(s): Image simulation.



45. T. Aschenbrenner, S. Figge, M. Schowalter, A. Rosenauer, and D. Hommel. Photoluminescence and structural analysis of a-plane InGaN layers. Journal of Crystal Growth, 310(23):4992-4995, 2008. Note: The Fourteenth International conference on Metalorganic Vapor Phase Epitax The 14th International conference on Metalorganic Vapor Phase Epitax. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2008.08.014] Keyword(s): A1. X-ray diffraction.



46. Bernhard Gehl, Andreas Frömsdorf, Vesna Aleksandrovic, Thomas Schmidt, Angelika Pretorius, Jan-Ingo Flege, Sigrid Bernstorff, Andreas Rosenauer, Jens Falta, Horst Weller, and Marcus Bäumer. Structural and Chemical Effects of Plasma Treatment on Close-Packed Colloidal Nanoparticle Layers. Advanced Functional Materials, 18(16):2398-2410, 2008. ISSN: 1616-3028. [doi:10.1002/adfm.200800274] Keyword(s): Adsorption, GISAXS, Nanoparticle layers, Plasma, XPS.



47. Abdul Kadir, M.R. Gokhale, Arnab Bhattacharya, Angelika Pretorius, and Andreas Rosenauer. {MOVPE} growth and characterization of InN/GaN single and multi-quantum well structures. Journal of Crystal Growth, 311(1):95-98, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2008.10.056] Keyword(s): A1. Transmission electron microscopy.



48. D. Litvinov, M. Schowalter, A. Rosenauer, B. Daniel, J. Fallert, W. Löffler, H. Kalt, and M. Hetterich. Determination of critical thickness for defect formation of CdSe/ZnSe heterostructures by transmission electron microscopy and photoluminescence spectroscopy. physica status solidi (a), 205(12):2892-2897, 2008. ISSN: 1862-6319. [doi:10.1002/pssa.200824151] Keyword(s): 68.37.Lp, 68.37.Og, 68.55.ag, 68.65.Fg, 78.55.Et.



49. A. Pretorius, T. Yamaguchi, C. Kübel, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigation of growth and dissolution of nano-islands grown by molecular beam epitaxy. Journal of Crystal Growth, 310(4):748-756, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2007.11.203] Keyword(s): A1. High resolution transmission electron microscopy.



50. EHM Rossi, A. Rosenauer, and G. Van Tendeloo. Influence of strain, specimen orientation and background estimation on composition evaluation of InAs/GaAs by TEM. Philosophical Magazine, 87(29):4461-4473, 2007. [WWW] [doi:10.1080/14786430701551905]



51. J. T. Titantah, D. Lamoen, M. Schowalter, and A. Rosenauer. Temperature effect on the 002 structure factor of ternary Ga(1-x)In(x)As crystals. Phys. Rev. B, 76(7):073303, August 2007. [doi:10.1103/PhysRevB.76.073303]



52. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle, and M. Hetterich. Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in $In_{x}Ga_{1-{}x}As$. Phys. Rev. B, 74(16):165306, October 2006. [doi:10.1103/PhysRevB.74.165306]



53. E. Piscopiello, A. Rosenauer, A. Passaseo, E. H. Montoya Rossi, and G. Van Tendeloo. Segregation in In(x)Ga(1-x)As/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition. Philosophical Magazine, 85(32):3857-3870, 2005. [doi:10.1080/147830500269402]



54. D. Litvinov, M. Schowalter, A. Rosenauer, D. Gerthsen, T. Passow, H. Heinke, and D. Hommel. Influence of the cap layer growth temperature on the Cd distribution in CdSe/ZnSe heterostructures. Journal of Crystal Growth, 263(1-4):348-352, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.11.073] Keyword(s): A1. Desorption.



55. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, and M. Schowalter. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy. physica status solidi (c), 0(6):1668-1683, 2003. ISSN: 1610-1642. [doi:10.1002/pssc.200303129] Keyword(s): 64.75 +g, 68.37.Lp, 68.55.Nq, 81.05 Ea, 81.15Gh, 81.15.Hi.



56. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, and M.-C. Amann. Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy. Appl. Phys. Lett., 83(15):3123-3125, October 2003. Keyword(s): growth, GaSb, Ga, Sb, GaAs, Ga, As, quantum wells, quantum well,.



57. E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, V. Perez-Solorzano, M. Jetter, and F. Scholz. In-Redistribution in a GaInN Quantum Well upon Thermal Annealing. physica status solidi (b), 234(3):738-741, 2002. ISSN: 1521-3951. [doi:10.1002/1521-3951(200212)234:3<738::AID-PSSB738>3.0.CO;2-X] Keyword(s): 64.75.+g, 66.30.Xj, 68.37.Lp, 78.55.Cr, 81.05.Ea.



58. D. Litvinov, A. Rosenauer, D. Gerthsen, and H. Preis. Electron microscopy investigation of the defect configuration in CdSe/ZnSe quantum dot structures. Philosophical Magazine A, 82(7):1361-1380, 2002. [doi:10.1080/01418610208235677]



59. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546-6552, 2002. ISSN: 0021-8979. [doi:10.1063/1.1516248] Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.



60. D. Gerthsen, B. Neubauer, A. Rosenauer, T. Stephan, H. Kalt, O. Schon, and M. Heuken. InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition. Applied Physics Letters, 79(16):2552-2554, 2001. ISSN: 0003-6951. [doi:10.1063/1.1409949] Keyword(s): III-V semiconductors, MOCVD, gallium compounds, indium compounds, lattice constants, photoluminescence, red shift, semiconductor growth, semiconductor quantum wells, spectral line intensity, transmission electron microscopy, wide band gap semiconductors, 6865Fg, 7855Cr, 7867De, 8107St, 8115Gh.



61. E. Kurtz, M. Schmidt, M. Baldauf, S. Wachter, M. Grün, H. Kalt, C. Klingshirn, D. Litvinov, A. Rosenauer, and D. Gerthsen. Suppression of lateral fluctuations in CdSe-based quantum wells. Applied Physics Letters, 79(8):1118-1120, 2001. [WWW] [doi:10.1063/1.1394172] Keyword(s): cadmium compounds, II-VI semiconductors, semiconductor quantum wells, fluctuations, photoluminescence, semiconductor growth, spectral line breadth, molecular beam epitaxial growth.



62. A. Rosenauer, D. Gerthsen, D. Van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter. Quantification of segregation and mass transport in In(x)Ga(1-x)As/GaAs$ Stranski-Krastanow layers}. Phys. Rev. B, 64(24):245334, December 2001. [doi:10.1103/PhysRevB.64.245334]



63. M. Schowalter, A. Rosenauer, D. Gerthsen, M. Arzberger, M. Bichler, and G. Abstreiter. Investigation of In segregation in InAs/AlAs quantum-well structures. Appl. Phys. Lett., 79(26):4426-4428, December 2001. Keyword(s): segregation, InAs, In, As, InAs/AlAs, AlAs, Al, As, quantum-well.



64. A F Tsatsul'nikov, I L Krestnikov, W V Lundin, A V Sakharov, A P Kartashova, A S Usikov, Zh I Alferov, N N Ledentsov, A Strittmatter, A Hoffmann, D Bimberg, I P Soshnikov, D Litvinov, A Rosenauer, D Gerthsen, and A Plaut. Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition. Semiconductor Science and Technology, 15(7):766, 2000. [WWW]



65. K.G. Chinyama, K.P. O'Donnell, A. Rosenauer, and D. Gerthsen. Morphology of ultrathin CdSe quantum confinement layers in ZnSe matrices. Journal of Crystal Growth, 203(3):362-370, 1999. ISSN: 0022-0248. [WWW] [doi:10.1016/S0022-0248(99)00099-8] Keyword(s): Morphology.



66. R. Engelhardt, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, and D. Gerthsen. Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures. Journal of Applied Physics, 86(10):5578-5583, 1999. ISSN: 0021-8979. [doi:10.1063/1.371563] Keyword(s): II-VI semiconductors, MOCVD coatings, cadmium compounds, excitons, plastic deformation, quantum well lasers, zinc compounds, 4255Px, 4260By, 7135-y, 8530Vw.



67. A. Rosenauer and D. Gerthsen. Atomic Scale Strain and Composition Evaluation from High-Resolution Transmission Electron Microscopy Images. In Peter W. Hawkes, editor, , volume 107 of Advances in Imaging and Electron Physics, pages 121-230. Elsevier, 1999. ISSN: 1076-5670. [WWW] [doi:10.1016/S1076-5670(08)70187-3]



68. Marcus J. Kastner, Gabriella Leo, Doris Brunhuber, Andreas Rosenauer, Herbert Preis, Berthold Hahn, Markus Deufel, and Wolfgang Gebhardt. Investigations on strain relaxation of ZnS(x)Se(1−x) layers grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 172(1-2):64-74, 1997. ISSN: 0022-0248. [WWW] [doi:10.1016/S0022-0248(96)00722-1]



69. A. Rosenauer, T. Remmele, D. Gerthsen, K. Tillmann, and A. Förster. Atomic scale strain measurements by the digital analysis of transmission electron microscopic lattice images. Optik (Stuttgart), 105(3):99-107, 1997. Note: Eng. ISSN: 0030-4026. [WWW] Keyword(s): Experimental study, TEM, Electron microscopy, High-resolution methods, Measuring methods, Stress analysis, Layer thickness, Crystals, Semiconductor materials.



70. Marcus J. Kastner, Berthold Hahn, Claus Auchter, Markus Deufel, Andreas Rosenauer, and Wolfgang Gebhardt. Structural characterization and MOVPE growth of ZnCdSe and ZnSSe layers, quantum wells and superlattices. Journal of Crystal Growth, 159(1-4):134-137, 1996. Note: Proceedings of the seventh international conference on II-VI compouds and devices. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(95)00761-X]



71. A. Rosenauer, T. Reisinger, F. Franzen, G. Schutz, B. Hahn, K. Wolf, J. Zweck, and W. Gebhardt. Transmission electron microscopy and reflected high-energy electron-diffraction investigation of plastic relaxation in doped and undoped ZnSe/GaAs(001). Journal of Applied Physics, 79(8):4124-4131, 1996. [WWW] [doi:10.1063/1.361776] Keyword(s): DISLOCATIONS, DOPED MATERIALS, EPITAXIAL LAYERS, MOLECULAR BEAM EPITAXY, PLASTICITY, RHEED, STRESS RELAXATION, TEM, VPE, ZINC SELENIDES.



72. W.S. Kuhn, A. Lusson, B. Qu'Hen, C. Grattepain, H. Dumont, O. Gorochov, S. Bauer, K. Wolf, M. Wörz, T. Reisinger, A. Rosenauer, H.P. Wagner, H. Stanzl, and W. Gebhardt. The metal organic vapour phase epitaxy of ZnTe: III. Correlation of growth and layer properties. Progress in Crystal Growth and Characterization of Materials, 31(1-2):119-177, 1995. ISSN: 0960-8974. [WWW] [doi:10.1016/0960-8974(95)00018-6]



73. A. Rosenauer, T. Reisinger, E. Steinkirchner, J. Zweck, and W. Gebhardt. High resolution transmission electron microscopy determination of Cd diffusion in CdSeZnSe single quantum well structures. Journal of Crystal Growth, 152(1-2):42-50, 1995. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(95)00083-6]



74. K Wolf, S Jilka, A Rosenauer, G Schutz, H Stanzl, T Reisinger, and W Gebhardt. High-resolution X-ray diffraction investigations of epitaxially grown ZnSe/GaAs layers. Journal of Physics D: Applied Physics, 28(4A):A120, 1995. [WWW]



75. S. Bauer, A. Rosenauer, P. Link, W. Kuhn, J. Zweck, and W. Gebhardt. Misfit dislocations in epitaxial ZnTe/GaAs (001) studied by {HRTEM}. Ultramicroscopy, 51(1-4):221-227, 1993. ISSN: 0304-3991. [WWW] [doi:10.1016/0304-3991(93)90148-Q]

1. Florian F. Krause, Marco Schowalter, Thorsten Mehrtens, Knut Müller-Caspary, Armand Beche, Karel W. H. van den Bos, Sandra Van Aert, Johan Verbeeck, and Andreas Rosenauer. ISTEM: A Realisation of Incoherent Imaging for Ultra-High Resolution TEM beyond the Classical Information Limit (Talk). In European Microscopy Congress 2016 (EMC 2016), Lyon (F), 2016.



2. Knut Müller-Caspary, Thorsten Mehrtens, Marco Schowalter, Tim Grieb, Andreas Rosenauer, Florian F. Krause, Christoph Mahr, and Pavel Potapov. ImageEval. A software for the processing, evaluation and acquisition of (S)TEM images. In European Microscopy Congress 2016, Lyon (F), [Poster IM03-286], 2016. [doi:10.1002/EMC2016.0677]



3. Knut Müller-Caspary, Andreas Oelsner, Pavel Potapov, and Thomas Schmidt. Analysis of strain and composition in GeSi/Si heterostructures by electron microscopy. In European Microscopy Congress 2016, Lyon (F), [Talk MS03-OP239], 2016. [doi:10.1002/EMC2016.0311]



4. Knut Müller-Caspary, Oliver Oppermann, Tim Grieb, Andreas Rosenauer, Marco Schowalter, Florian F. Krause, Thorsten Mehrtens, Pavel Potapov, Andreas Beyer, and Kerstin Volz. Angle-resolved Scanning Transmission Electron Microscopy (ARSTEM) for materials analysis. In European Microscopy Congress 2016, Lyon (F), [Poster IM06-350], 2016. [doi:10.1002/EMC2016.0259]



5. Florian Fritz Krause, Andreas Rosenauer, Knut Müller-Caspary, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. In Frontiers of Electron Microscopy in Materials Science (FEMMS) 2015, Lake Tahoe (CA/USA), [Invited Talk], September 13-18th 2015.



6. Thorsten Mehrtens, Marco Schowalter, Jakob Borchardt, Max Grimme, Knut Müller-Caspary, Lars Hoffmann, H. Jönen, U. Rossow, A. Hangleiter, and Andreas Rosenauer. Temperature dependence of HAADF intensity: Influence of disorder. In Microscopy Conference MC 2015, Göttingen (D), session IM 2, [Poster IM2.P049], September 6-11th 2015.



7. Knut Müller, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields. In Microscopy of Semiconducting Materials 2015 (MSM XIX), Cambridge (UK) [Talk], volume Session 4b (Wed, April 1st), 2015.



8. Knut Müller-Caspary, Florian F. Krause, Armand Béché, Marco Schowalter, Vincent Galioit, Stefan Löffler, Oliver Oppermann, Tim Grieb, Andreas Oelsner, Pavel Potapov, Johan Verbeeck, Josef Zweck, Peter Schattschneider, and Andreas Rosenauer. Quantum mechanical interpretation of electron picodiffraction reveals atomic electric fields. In Frontiers of Electron Microscopy in Materials Science (FEMMS) 2015, Lake Tahoe (CA/USA), [Invited Talk], September 13-18th 2015.



9. Andreas Rosenauer, Florian F. Krause, Knut Müller, Marco Schowalter, and Thorsten Mehrtens. Conventional Transmission Electron Microscopy Imaging beyond the Diffraction and Information Limits. In Materials Research Society Spring Meeting 2015 (MRS 2015), San Francisco (USA) [Talk], volume Symposium ZZ, Talk 2.02, 2015.



10. M. Simson, H. Banba, R. Hartmann, M. Huth, S. Ihle, L. Jones, Y. Kondo, K. Müller, P. D. Nellist, H. Ryll, R. Sagawa2, J. Schmidt, H. Soltau, L. Strüder, and H. Yang. 4D-STEM imaging with the pnCCD (S)TEM-Camera. In Microscopy and Microanalysis (M&M, Portland, USA) [Talk], 2015.



11. M. Simson, R. E. Dunin-Borkowski, C. Dwyer, R. Hartmann, M. Huth, S. Ihle, P. Kotula, V. Migunov, K. Müller-Caspary, A. Rosenauer, H. Ryll, J. Schmidt, H. Soltau, L. Strüder, and M. Wollgarten. The pnCCD (S)TEM Camera - A Pixelated, Fast and Direct Detector for TEM and STEM. In PICO conference 2015: Frontiers of aberration-corrected electron microscopy, Kasteel Vaalsbroek (The Netherlands) [Poster], 2015.



12. Martin Simson, Henning Ryll, R. Hartmann, Martin Huth, Sebastian Ihle, Lewis Jones, Y. Kondo, Knut Müller, Peter D. Nellist, R. Sagawa, J. Schmidt, Heike Soltau, Lothar Strder, and Hao Yang. Fast STEM imaging with the pixelated pnCCD (S)TEM-camera. In Microscopy Conference MC 2015, Göttingen (D), session IM 1, [Poster IM1.P012], September 6-11th 2015.



13. Thorsten Mehrtens, Marco Schowalter, Darius Tytko, Pyuck-Pa Choi, Dierk Raabe, Lars Hoffmann, Holger Jönen, Uwe Rossow, Andreas Hangleiter, and Andreas Rosenauer. Temperature dependence of Z-contrast in InGaN. In 18th International Microscopy Congress (IMC), Prague (Czech Republic) [Poster presentation], 2014.



14. Henning Ryll, Robert Hartmann, Martin Huth, Sebastian Ihle, Knut Müller, Andreas Rosenauer, Julia Schmidt, Martin Simson, Heike Soltau, and Lothar Strüder. New Operation Modes with the PNCCD TEM Camera for Versatile, Direct Electron Imaging in Transmission Electron Microscopy Applications. In Microscience Microscopy Congress, MMC 2014, Manchester (UK), July, 2014 [Poster 1051], 2014.



15. Marco Schowalter, Thorsten Mehrtens, Jokob Borchard, Max Grimme, Knut Müller, and Andreas Rosenauer. Influence of disorder on the temperature dependence of the HAADF intensity. In EMSI-2014, Delhi (India) [Talk], 2014.



16. Thorsten Mehrtens, Marco Schowalter, Darius Tytko, Pyuck-Pa Choi, Dierk Raabe, Lars Hoffmann, Holger Jönen, Uwe Rossow, Andreas Hangleiter, and Andreas Rosenauer. Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-Contrast. In Microscopy of Semiconducting Materials 2013 (MSM XVIII),Oxford (UK) [Talk], 2013.



17. A. Rosenauer, K. Müller, T. Mehrtens, M. Schowalter, A. Würfel, T. Aschenbrenner, C. Kruse, D. Hommel, L. Hoffmann, A. Hangleiter, Pyuck-Pa Choi, and D. Raabe. Quantitative Methods in TEM and STEM. In , 2013.



18. Stephanie Bley, Thorsten Mehrtens, Parlapalli Venkata Satyam, and Andreas Rosenauer. Optimierung der Präparation von GaN-basierten Proben mittels Niedrigenergie-Ionendünnung für (S)TEM. In DPG Frühjahrstagung, Berlin (Germany) [Talk], number HL 64.7, pages 240, 2012.



19. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A method to avoid strain field induced artifacts in 2D chemical mapping of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis [Talk 595], volume 18, pages 1028-1029, 2012. [doi:10.1017/S143192761200699X]



20. T. Mehrtens, M. Schowalter, D. Tytko, P.-P. Choi, D. Raabe, L. Hoffmann, A. Hangleiter, and A. Rosenauer. Temperature dependence of Z-Contrast for InGaN. In Microscopy & Microanalysis, Phoenix (USA) [Talk], 2012.



21. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain analysis by nano-beam electron diffraction (SANBED) in semiconductor nanostructures [Invited talk]. In The XXXIII Annual Meeting of the Electron Microscopy Society of India, pages 36, 2012. Keyword(s): SANBED.



22. Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz, and Kerstin Volz. Strain measurement in semiconductor nanostructures by convergent electron nanoprobe diffraction [Talk]. In Verhandlungen der Deutschen Physikalischen Gesellschaft, volume 47, pages 312, 2012.



23. A. Rosenauer, K. Müller, T. Mehrtens, M. Schowalter, T. Aschenbrenner, C. Kruse, D. Hommel, K. Sebald, and J. Gutowski. TEM investigation of InGaN quantum dots. In First German-Korean Symposium on Nano-optics and Nano-technology, Hanse-Wissenschaftskolleg, Delmenhorst, (Germany) December 14, 2012, [Invited talk], 2012.



24. Robert Imlau, Knut Müller, Marco Schowalter, Rafael Fritz, Kerstin Volz, and Andreas Rosenauer. Untersuchung struktureller und optischer Eigenschaften von getemperten InGaNAs-Trögen mittels TEM-Dreistrahlabbildung. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.



25. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S. A. Gerstl, Pyuck-Pa Choi, Dierk Raabe, Adrian Avramescu, and Andreas Rosenauer. A (S)TEM and Atom Probe Tomography Study of InGaN. In DPG Frühjahrstagung, Dresden (Germany) [Talk], number 62.3, 2011.



26. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S. A. Gerstl, Pyuck-Pa Choi, Dierk Raabe, Adrian Avramescu, and Andreas Rosenauer. A (S)TEM and atom probe tomography study for InGaN. In MSM 2011 Cambridge, U.K. [talk] talk D7, 2011.



27. Thorsten Mehrtens, Stephanie Bley, Marco Schowalter, Kathrin Sebald, Moritz Seyfried, Jürgen Gutowski, Stephan S. A. Gerstl, Pyuck-Pa Choi, Dierk Raabe, Adrian Avramescu, and Andreas Rosenauer. Determination of composition in InGaN/GaN heterostructures using (S)TEM, Atom Probe Tomography and Photoluminescence. In E-MRS Spring Meeting 2011, Nice (France) [Talk], 2011.



28. K. Müller, T. Grieb, O. Rubel, M. Schowalter, R. Fritz, D. Z. Hu, D. Schaadt, M. Hetterich, K. Volz, and A. Rosenauer. Conventional and Scanning TEM of InGaNAs: Comparison of theory and experiment. In W. Jäger, W. Kaysser, W. Benecke, W. Depmeier, S. Gorb, L. Kienle, M. Mulisch, D. Häussler, and A. Lotnyk, editors, Proceedings of the Microscopy Conference 2011 (MC 2011, Kiel) Germany [poster] Best poster award, volume 1: Instrumentation and Methods, pages IM2.P132, 2011. DGE - German Society for Electron Microscopy.



29. Knut Müller, Marco Schowalter, Andreas Rosenauer, Dongzhi M. Hu, Daniel Schaadt, Michael Hetterich, Philippe Gilet, Oleg Rubel, Rafael Fritz, and Kerstin Volz. Annealing in InGaNAs studied by TEM three-beam imaging. In DPG Frühjahrstagung, Dresden (Germany) [Talk], 2011.



30. K. Müller, M. Schowalter, O. Rubel, D. Z. Hu, D. M. Schaadt, M. Hetterich, P. Gilet, R. Fritz, K. Volz, and A. Rosenauer. TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells. In MSM 2011 Cambridge, U. K. [Talk] talk B4, 2011.



31. A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, P. V. Satyam, S. Bley, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, J. Gutowski, S. S. A. Gerstl, P. P. Choi, and D. Raabe. Composition mapping in InGaN with quantitative STEM Z-contrast imaging. In ICNS Glasgow 2011 [Invited talk], 2011.



32. Knut Müller, Marco Schowalter, Oleg Rubel, Kerstin Volz, Michael Hetterich, Dongzhi Hu, Daniel Schaadt, and Andreas Rosenauer. Dual compositional mapping in InGaNAs using a single TEM lattice fringe image. In International Microscopy Congress (IMC17), Rio de Janeiro (Brazil) [Poster presentation], 2010.



33. M. Schowalter, T. Aschenbrenner, C. Kruse, D. Hommel, and A. Rosenauer. TEM characterization of catalyst- and mask-free grown GaN nanorods. In MSM XVI, Oxford 2009, 16.-20. März Journal of Physics: Conference Series, 209 (2010) 012020, 2010.



34. Moritz Speckmann, Thomas Schmidt, Jan Ingo Flege, Inga Heidmann, Andre Kubelka, Locatelli A., T. O. Mentes, M. A. Nino, Knut Müller, Andreas Rosenauer, and Jens Falta. Facets, mazes, slabs, and nanowires: silver-mediated germanium growth on silicon surfaces. In 37th International conference on Vacuum Ultraviolet and X-ray Physics (VUVX), Vancouver (Canada) [Talk], 2010.



35. Thorsten Mehrtens, Marco Schowalter, Knut Müller, Andreas Rosenauer, Dongzhi Hu, and Daniel Schaadt. Analysis of segregation profiles in InGaAs quantum wells via TEM and STEM. In Verhandlungen der DPG, number HL 1.6, 2009.



36. Knut Müller, Marco Schowalter, Andreas Rosenauer, Wolfgang Stolz, and Kerstin Volz. Simultaneous measurement of In and N concentration maps and profiles in InGaNAs from a single TEM lattice fringe image. In W. Grogger, F. Hofer, and P. Pölt, editors, MC2009, Graz (Austria) Vol. 3: Materials science, pages 45-46, 2009.



37. A. Pretorius, A. Rosenauer, T. Aschenbrenner, H. Dartsch, S. Figge, and D. Hommel. TEM analyses of microstructure and composition of Al(x)Ga(1-x)N/GaN distributed Bragg reflectors. In S. Richter, A. Schwedt (Eds.): EMC 2008, Vol. 2: Materials Science, pp. 81-82, DOI: 10.1007/978-3-540-85226-1_41, 2008.



38. A. Rosenauer, M. Schowalter, J. Titantah, and D. Lamoen. A novel emission potential multislice method to calculate intensity contributions for thermal diffuse scattering in plane wave illumination TEM. In M. Luysberg, K. Tillmann, T. Weirich (Eds.): EMC 2008, Vol. 1: Instrumentation and Methods, pp. 147-148, DOI: 10.1007/978-3-540-85156-1_74, 2008.



39. M. Schowalter, A. Rosenauer, J. Titantah, and D. Lamoen. Computation and parametrization of Debye-Waller temperature factors for sphalerite type II-VI, III-V and group IV semiconductors. In M. Luysberg, K. Tillmann, T. Weirich (Eds.): EMC 2008, Vol. 1: Instrumentation and Methods, pp. 153-154, DOI: 10.1007/978-3-540-85156-1_77, 2008.



40. A. Rosenauer. A Local Absorptive Potential Multislice Approximation to Calculate Intensity Contributions from Thermal Diffuse Scattering in Conventional TEM. In MC 2007, Saarbrücken, Germany, September 2-7, 2007 Microsc. Microanal. 13 (Suppl. 3), 2007, 024 DOI: 10.1017/S1431927607080129, 2007.



41. M. Schowalter, A. Rosenauer, J. Titantah, and D. Lamoen. Calculation of Debye-Waller temperature factors for GaAs. In Springer Proceedings in Physics: MSM(2007), 2007.



42. M. Schowalter, A. Rosenauer, J. Titantah, and D. Lamoen. Temperature dependence of Debye-Waller Factors of sphalerite III-V Semiconductors calculated from Ab Initio Force Constants. In MC 2007, Saarbrücken, Germany, September 2-7, 2007 Microsc. Microanal. 13 (Suppl. 3), 2007, 128 DOI: 10.1017/S1431927607080646, 2007.



43. A. Pretorius, T. Yamaguchi, C. Kuebel, R. Kröger, D. Hommel, and A. Rosenauer. TEM analyses of wurtzite InGaN islands grown by MOVPE and MBE. In ICNS 6, August / September 2005, Bremen Phys. stat. sol c, 3 (2006), 1679-1682, 2006.



44. M. Beer, K. Engl, J. Zweck, A. Able, M. Wegscheider, M. Schowalter, and A. Rosenauer. Quantative TEM Analysis of the composition of InGaN/AlGaN layers: Selection of the proper imaging conditions. In Presented at Microscopy Conference Davos (2005), 2005.



45. A. Rosenauer, G. Schütz, T. Reisinger, H. Preis, F. Franzen, and W. Gebhardt. TEM Investigation of Plastic Relaxation in ZnSe/GaAs(001), International Conference on Semiconductor Heteroepitaxy, Monpellier, France, July 4th to 7th,. In World Scientific, 1995, 114-117, 1995.



46. G. Schütz, Rose., T. Reisinger, and W. Gebhardt. TEM-Untersuchung der Spannungsrelaxation in MBE ZnSe/GaAs(001). In DPG Frühjahrstagung, Berlin (Germany) Frühjahrstagung des Arbeitskreises Festkörperphysik 1995, Berlin, Verhandl. DPG (VI) 30, 1995, 1213, 1995.



47. A. Rosenauer, H. Stanzl, K. Wolf, S. Bauer, M. Kastner, M. Grün, and W. Gebhardt. Spatial Confinement of Misfit Dislocations at the Interfaces of Epitaxial CdSe/GaAs(111) and ZnTe/GaAs(111) Studied by TEM,. In 17th International Conference on Defects in Semiconductors. Gmunden, Austria, 18-23 July 1993, Materials Science Forum vols. 143-147, 567-572, 1994.

1. Knut Müller-Caspary. Applications and limitations of momentum-resolved STEM [Talk at the Meeting of the AK-HREM on High-resolution TEM, TU Berlin, Berlin(Germany)], April 2016.



2. Knut Müller-Caspary and Andreas Rosenauer. STEM and TEM Simulation [Tutorial], June 2015.



3. Knut Müller. Nanowires, quantum wells, MOSFETs: Scanning and conventional TEM characterisation of structure and composition [Invited talk], October 2014.



4. Knut Müller. Quantitative analysis of (S)TEM images using the ImageEval software [Tutorial], October 2014.



5. Moritz Tewes. Quantitative STEM-Untersuchung von Germanium-Silizium-Heterostrukturen (Quantitative STEM investigations of germanium-silicon heterostructures). Master's thesis, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany, February 2013.



6. C. Mahr. Einfluss von Linsenfehlers auf Verspannungsmessungen aus CBED-Bildern im TEM (Impact of lens aberrations on strain measurements from CBED images in a TEM), July 2012.



7. Thorsten Mehrtens. Bestimmung von Segregationsprofilen in InGaAs/GaAs-Quantentrögen mittels konventioneller und Rastertransmissionselektronenmikroskopie. Master's thesis, Universität Bremen, 2009.



8. Nils Neugebohrn. Quantitative Untersuchung der Temperatur- und Dickenabhängigkeit des STEM-Dunkelfeldsignals von Zinkblende-Halbleitern (Quantitative investigation of the temperature and thickness dependence of the STEM dark field signal of zinc blende semiconductors), July 2009.



9. Knut Müller. Bestimmung von Strukturfaktoren für Galliumarsenid mittels Elektronenbeugung - Entwicklung und Test einer Messmethode (Determination of structure factors for gallium arsenide by electron diffraction - development and test of a measurement method). Diplomarbeit, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany, September 2007.

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