1. Suman Pokhrel, Johannes Birkenstock, Arezoo Dianat, Janina Zimmermann, Marco Schowalter, Andreas Rosenauer, Lucio Colombi Ciacchi, and L. Madler. In situ high temperature X-ray diffraction, transmission electron microscopy and theoretical modeling for the formation of WO3 crystallites. CrystEngComm, 17:6985-6998, 2015. [doi:10.1039/C5CE00526D]



2. Tim Grieb, Knut Müller, Emmanuel Cadel, Andreas Beyer, Marco Schowalter, Etienne Talbot, Kerstin Volz, and Andreas Rosenauer. Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM. Microscopy and Microanalysis, 20:1740, 9 2014. ISSN: 1435-8115. [WWW] [doi:10.1017/S1431927614013051]



3. Malte Fandrich, Thorsten Mehrtens, Timo Aschenbrenner, Thorsten Klein, Martina Gebbe, Stephan Figge, Carsten Kruse, Andreas Rosenauer, and Detlef Hommel. Nitride based heterostructures with Ga- and N-polarity for sensing applications. Journal of Crystal Growth, 370(0):68-73, 2013. ISSN: 0022-0248. [WWW] Keyword(s): A1. Characterization, A3. Metalorganic vapor phase epitaxy, A3. Molecular beam epitaxy, B1. Nitrides, B3. Sensors.



4. Thorsten M. Gesing, Marco Schowalter, Claudia Weidenthaler, M. Mangir Murshed, Gwilherm Nenert, Cecilia B. Mendive, Mariano Curti, Andreas Rosenauer, J.-Christian Buhl, Hartmut Schneider, and Reinhard X. Fischer. Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons. J. Mater. Chem., 22:18814-18823, 2012. [doi:10.1039/C2JM33208F]



5. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging and improved STEM-HAADF strain state analysis. Ultramicroscopy, 117:15-23, 2012. [WWW] [doi:10.1016/j.ultramic.2012.03.014]



6. Huanjun Zhang, Amir R. Gheisi, Andreas Sternig, Knut Müller, Marco Schowalter, Andreas Rosenauer, Oliver Diwald, and Lutz Mädler. Bulk and Surface Excitons in Alloyed and Phase-Separated ZnO-MgO Particulate Systems. ACS Applied Materials & Interfaces, 4(5):2490-2497, 2012. [doi:10.1021/am300184b]



7. T. Aschenbrenner, G. Kunert, W. Freund, C. Kruse, S. Figge, M. Schowalter, C. Vogt, J. Kalden, K. Sebald, A. Rosenauer, J. Gutowski, and D. Hommel. Catalyst free self-organized grown high-quality GaN nanorods. physica status solidi (b), 248(8):1787-1799, 2011. ISSN: 1521-3951. [doi:10.1002/pssb.201147148] Keyword(s): MBE, MOVPE, nanorods, nitrides, TEM, III-V semiconductors.



8. Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Gerd Kunert, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel. A structural investigation of highly ordered catalyst- and mask-free GaN nanorods. Nanotechnology, 22(2):025603, 2011. [WWW]



9. Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging. Journal of Physics: Conference Series, 326(1):012033, 2011. [WWW]



10. Angelika Pretorius, Thomas Schmidt, Timo Aschenbrenner, Tomohiro Yamaguchi, Christian Kübel, Knut Müller, Heiko Dartsch, Detlef Hommel, Jens Falta, and Andreas Rosenauer. Microstructural and compositional analyses of GaN based nanostructures. Physica Status Solidi, 248:1822-1836, 2011. [doi:10.1002/pssb.201147175]



11. C. Tessarek, S. Figge, T. Aschenbrenner, S. Bley, A. Rosenauer, M. Seyfried, J. Kalden, K. Sebald, J. Gutowski, and D. Hommel. Strong phase separation of strained InGaN layers due to spinodal and binodal decomposition: Formation of stable quantum dots. Phys. Rev. B, 83:115316, March 2011. [doi:10.1103/PhysRevB.83.115316]



12. T. Aschenbrenner, H. Dartsch, C. Kruse, M. Anastasescu, M. Stoica, M. Gartner, A. Pretorius, A. Rosenauer, Thomas Wagner, and D. Hommel. Optical and structural characterization of AlInN layers for optoelectronic applications. J. Appl. Phys., 108(6):063533, 2010. [WWW] [doi:10.1063/1.3467964] Keyword(s): aluminium compounds, annealing, distributed Bragg reflectors, extinction coefficients, III-V semiconductors, indium compounds, MOCVD coatings, refractive index, semiconductor epitaxial layers, surface morphology, surface roughness, transmission electron microscopy, vapour phase epitaxial growth, wide band gap semiconductors, X-ray diffraction.



13. Suman Pokhrel, Johannes Birkenstock, Marco Schowalter, Andreas Rosenauer, and Lutz Mädler. Growth of Ultrafine Single Crystalline WO3 Nanoparticles Using Flame Spray Pyrolysis. Crystal Growth & Design, 10(2):632-639, 2010. [doi:10.1021/cg9010423]



14. Patrick Sonström, Johannes Birkenstock, Yulia Borchert, Laura Schilinsky, Peter Behrend, Katharina Gries, Knut Müller, Andreas Rosenauer, and Marcus Bäumer. Nanostructured Praseodymium Oxide: Correlation between phase transitions and catalytic activity. ChemCatChem, 2:694-704, 2010. [doi:10.1002/cctc.200900311]



15. T. Aschenbrenner, S. Figge, M. Schowalter, A. Rosenauer, and D. Hommel. Photoluminescence and structural analysis of a-plane InGaN layers. Journal of Crystal Growth, 310(23):4992-4995, 2008. Note: The Fourteenth International conference on Metalorganic Vapor Phase Epitax The 14th International conference on Metalorganic Vapor Phase Epitax. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2008.08.014] Keyword(s): A1. X-ray diffraction.



16. Abdul Kadir, M.R. Gokhale, Arnab Bhattacharya, Angelika Pretorius, and Andreas Rosenauer. {MOVPE} growth and characterization of InN/GaN single and multi-quantum well structures. Journal of Crystal Growth, 311(1):95-98, 2008. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2008.10.056] Keyword(s): A1. Transmission electron microscopy.



17. E. Roventa, G. Alexe, R. Kröger, D. Hommel, and A. Rosenauer. Structural investigations of spatial correlation of CdSe/ZnSe quantum dot stacks grown by molecular beam epitaxy. Journal of Crystal Growth, 278(1-4):316-319, 2005. Note: 13th International Conference on Molecular Beam Epitaxy. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2005.01.017] Keyword(s): A3. Migration enhanced epitaxy.



18. D. Litvinov, M. Schowalter, A. Rosenauer, D. Gerthsen, T. Passow, H. Heinke, and D. Hommel. Influence of the cap layer growth temperature on the Cd distribution in CdSe/ZnSe heterostructures. Journal of Crystal Growth, 263(1-4):348-352, 2004. ISSN: 0022-0248. [WWW] [doi:10.1016/j.jcrysgro.2003.11.073] Keyword(s): A1. Desorption.



19. T. Passow, K. Leonardi, H. Heinke, D. Hommel, D. Litvinov, A. Rosenauer, D. Gerthsen, J. Seufert, G. Bacher, and A. Forchel. Quantum dot formation by segregation enhanced CdSe reorganization. Journal of Applied Physics, 92(11):6546-6552, 2002. ISSN: 0021-8979. [doi:10.1063/1.1516248] Keyword(s): II-VI semiconductors, X-ray diffraction, cadmium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum wells, surface segregation, transmission electron microscopy, zinc compounds, 6835Dv, 6865Fg, 6865Hb, 7855Et, 7866Hf, 8105Dz, 8115Hi.



20. Marcus J. Kastner, Berthold Hahn, Claus Auchter, Markus Deufel, Andreas Rosenauer, and Wolfgang Gebhardt. Structural characterization and MOVPE growth of ZnCdSe and ZnSSe layers, quantum wells and superlattices. Journal of Crystal Growth, 159(1-4):134-137, 1996. Note: Proceedings of the seventh international conference on II-VI compouds and devices. ISSN: 0022-0248. [WWW] [doi:10.1016/0022-0248(95)00761-X]



21. W.S. Kuhn, A. Lusson, B. Qu'Hen, C. Grattepain, H. Dumont, O. Gorochov, S. Bauer, K. Wolf, M. Wörz, T. Reisinger, A. Rosenauer, H.P. Wagner, H. Stanzl, and W. Gebhardt. The metal organic vapour phase epitaxy of ZnTe: III. Correlation of growth and layer properties. Progress in Crystal Growth and Characterization of Materials, 31(1-2):119-177, 1995. ISSN: 0960-8974. [WWW] [doi:10.1016/0960-8974(95)00018-6]



22. S. Lankes, B. Hahn, C. Meier, F. Hierl, M. Kastner, A. Rosenauer, and W. Gebhardt. Photoreflectance measurements on ZnSe/ZnS0.25Se0.75SQW. physica status solidi (a), 152(1):123-131, 1995. ISSN: 1521-396X. [doi:10.1002/pssa.2211520113]



23. K Wolf, S Jilka, A Rosenauer, G Schutz, H Stanzl, T Reisinger, and W Gebhardt. High-resolution X-ray diffraction investigations of epitaxially grown ZnSe/GaAs layers. Journal of Physics D: Applied Physics, 28(4A):A120, 1995. [WWW]

1. Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Kerstin Volz, and Andreas Rosenauer. A method to avoid strain field induced artifacts in 2D chemical mapping of dilute GaNAs by HAADF STEM. In Microscopy and Microanalysis [Talk 595], volume 18, pages 1028-1029, 2012. [doi:10.1017/S143192761200699X]

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